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Characterization of hydrogenated amorphous silicon sensors on polyimide flexible substrate
Authors:
M. Menichelli,
L. Antognini,
S. Aziz,
A. Bashiri,
M. Bizzarri,
L. Calcagnile,
M. Caprai,
D. Caputo,
A. P. Caricato,
R. Catalano,
D. Chilà,
G. A. P. Cirrone,
T. Croci,
G. Cuttone,
G. De Cesare,
S. Dunand,
M. Fabi,
L. Frontini,
C. Grimani,
M. Ionica,
K. Kanxheri,
M. Large,
V. Liberali,
N. Lovecchio,
M. Martino
, et al. (28 additional authors not shown)
Abstract:
Hydrogenated amorphous silicon (a-Si:H) is a material having an intrinsically high radiation hardness that can be deposited on flexible substrates like Polyimide. For these properties a-Si:H can be used for the production of flexible sensors. a-Si:H sensors can be successfully utilized in dosimetry, beam monitoring for particle physics (x-ray, electron, gamma-ray and proton detection) and radiothe…
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Hydrogenated amorphous silicon (a-Si:H) is a material having an intrinsically high radiation hardness that can be deposited on flexible substrates like Polyimide. For these properties a-Si:H can be used for the production of flexible sensors. a-Si:H sensors can be successfully utilized in dosimetry, beam monitoring for particle physics (x-ray, electron, gamma-ray and proton detection) and radiotherapy, radiation flux measurement for space applications (study of solar energetic particles and stellar events) and neutron flux measurements. In this paper we have studied the dosimetric x-ray response of n-i-p diodes deposited on Polyimide. We measured the linearity of the photocurrent response to x-rays versus dose-rate from which we have extracted the dosimetric x-ray sensitivity at various bias voltages. In particular low bias voltage operation has been studied to assess the high energy efficiency of these kind of sensor. A measurement of stability of x-ray response versus time has been shown. The effect of detectors annealing has been studied. Operation under bending at various bending radii is also shown.
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Submitted 30 September, 2023;
originally announced October 2023.
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A Hydrogenated amorphous silicon detector for Space Weather Applications
Authors:
Catia Grimani,
Michele Fabi,
Federico Sabbatini,
Mattia Villani,
Lucio Calcagnile,
Anna Paola Caricato,
Roberto Catalano,
Giuseppe Antonio Pablo Cirrone,
Tommaso Croci,
Giacomo Cuttone,
Sylvain Dunand,
Luca Frontini,
Maria Ionica,
Keida Kanxheri,
Matthew Large,
Valentino Liberali,
Maurizio Martino,
Giuseppe Maruccio,
Giovanni Mazza,
Mauro Menichelli,
Anna Grazia Monteduro,
Arianna Morozzi,
Francesco Moscatelli,
Stefania Pallotta,
Daniele Passeri
, et al. (13 additional authors not shown)
Abstract:
The characteristics of a hydrogenated amorphous silicon (a-Si:H) detector are presented here for monitoring in space solar flares and the evolution of large energetic proton events up to hundreds of MeV. The a-Si:H presents an excellent radiation hardness and finds application in harsh radiation environments for medical purposes, for particle beam characterization and in space weather science and…
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The characteristics of a hydrogenated amorphous silicon (a-Si:H) detector are presented here for monitoring in space solar flares and the evolution of large energetic proton events up to hundreds of MeV. The a-Si:H presents an excellent radiation hardness and finds application in harsh radiation environments for medical purposes, for particle beam characterization and in space weather science and applications. The critical flux detection threshold for solar X rays, soft gamma rays, electrons and protons is discussed in detail.
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Submitted 1 September, 2023; v1 submitted 1 February, 2023;
originally announced February 2023.
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Resistive Read-out in Thin Silicon Sensors with Internal Gain
Authors:
N. Cartiglia,
F. Moscatelli,
R. Arcidiacono,
P. Asenov,
M. Costa,
T. Croci,
M. Ferrero,
A. Fondacci,
L. Lanteri,
L. Menzio,
A. Morozzi,
R. Mulargia,
D. Passeri,
F. Siviero,
V. Sola,
M. Tornago
Abstract:
Two design innovations, low-gain avalanche (Low-Gain Avalance Diode, LGAD) and resistive read-out (Resistive Silicon Detector, RSD), have brought strong performance improvements to silicon sensors. Large signals, due to the added gain mechanism, lead to improved temporal precision, while charge sharing, introduced by resistive read-out, allows for achieving excellent spatial resolution even with l…
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Two design innovations, low-gain avalanche (Low-Gain Avalance Diode, LGAD) and resistive read-out (Resistive Silicon Detector, RSD), have brought strong performance improvements to silicon sensors. Large signals, due to the added gain mechanism, lead to improved temporal precision, while charge sharing, introduced by resistive read-out, allows for achieving excellent spatial resolution even with large pixels. LGAD- and RSD- based silicon sensors are now adopted, or considered, in several future experiments and are the basis for almost every next 4D-trackers. New results obtained with sensors belonging to the second FBK production of RSD (RSD2) demonstrate how a combined resolution of 30 ps and 30 \microns can be obtained with pixels as large as $1 \times 1 $ mm$^2$.
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Submitted 7 January, 2023;
originally announced January 2023.
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Development of thin hydrogenated amorphous silicon detectors on a flexible substrate
Authors:
M. Menichelli,
M. Bizzarri,
L. Calcagnile,
M. Caprai,
A. P. Caricato,
R. Catalano,
G. A. P. Cirrone,
T. Croci,
G. Cuttone,
S. Dunand,
M. Fabi,
L. Frontini,
B. Gianfelici,
C. Grimani,
M. Ionica,
K. Kanxheri,
M. Large,
V. Liberali,
M. Martino,
G. Maruccio,
G. Mazza,
A. G. Monteduro,
A. Morozzi,
F. Moscatelli,
S. Pallotta
, et al. (18 additional authors not shown)
Abstract:
The HASPIDE (Hydrogenated Amorphous Silicon PIxels DEtectors) project aims at the development of thin hydrogenated amorphous silicon (a-Si:H) detectors on flexible substrates (mostly Polyimide) for beam monitoring, neutron detection and space applications. Since a-Si:H is a material with superior radiation hardness, the benefit for the above-mentioned applications can be appreciated mostly in radi…
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The HASPIDE (Hydrogenated Amorphous Silicon PIxels DEtectors) project aims at the development of thin hydrogenated amorphous silicon (a-Si:H) detectors on flexible substrates (mostly Polyimide) for beam monitoring, neutron detection and space applications. Since a-Si:H is a material with superior radiation hardness, the benefit for the above-mentioned applications can be appreciated mostly in radiation harsh environments. Furthermore, the possibility to deposit this material on flexible substrates like Polyimide (PI), polyethylene naphthalate (PEN) or polyethylene terephthalate (PET) facilitates the usage of these detectors in medical dosimetry, beam flux and beam profile measurements. Particularly interesting is its use when positioned directly on the flange of the vacuum-to-air separation interface in a beam line, as well as other applications where a thin self-standing radiation flux detector is envisaged. In this paper, the HASPIDE project will be described and some preliminary results on PI and glass substrates will be reported.
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Submitted 30 November, 2022;
originally announced November 2022.
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A Compensated Design of the LGAD Gain Layer
Authors:
Valentina Sola,
Roberta Arcidiacono,
Patrick Asenov,
Giacomo Borghi,
Maurizio Boscardin,
Nicolò Cartiglia,
Matteo Centis Vignali,
Tommaso Croci,
Marco Ferrero,
Alessandro Fondacci,
Giulia Gioachin,
Simona Giordanengo,
Leonardo Lantieri,
Marco Mandurrino,
Luca Menzio,
Vincenzo Monaco,
Arianna Morozzi,
Francesco Moscatelli,
Daniele Passeri,
Nadia Pastrone,
Giovanni Paternoster,
Federico Siviero,
Amedeo Staiano,
Marta Tornago
Abstract:
In this contribution, we present an innovative design of the Low-Gain Avalanche Diode (LGAD) gain layer, the p$^+$ implant responsible for the local and controlled signal multiplication. In the standard LGAD design, the gain layer is obtained by implanting $\sim$ 5E16/cm$^3$ atoms of an acceptor material, typically Boron or Gallium, in the region below the n$^{++}$ electrode. In our design, we aim…
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In this contribution, we present an innovative design of the Low-Gain Avalanche Diode (LGAD) gain layer, the p$^+$ implant responsible for the local and controlled signal multiplication. In the standard LGAD design, the gain layer is obtained by implanting $\sim$ 5E16/cm$^3$ atoms of an acceptor material, typically Boron or Gallium, in the region below the n$^{++}$ electrode. In our design, we aim at designing a gain layer resulting from the overlap of a p$^+$ and an n$^+$ implants: the difference between acceptor and donor doping will result in an effective concentration of about 5E16/cm$^3$, similar to standard LGADs. At present, the gain mechanism of LGAD sensors under irradiation is maintained up to a fluence of $\sim$ 1-2E15/cm$^2$, and then it is lost due to the acceptor removal mechanism. The new design will be more resilient to radiation, as both acceptor and donor atoms will undergo removal with irradiation, but their difference will maintain constant. The compensated design will empower the 4D tracking ability typical of the LGAD sensors well above 1E16/cm$^2$.
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Submitted 1 September, 2022;
originally announced September 2022.
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Testing of planar hydrogenated amorphous silicon sensors with charge selective contacts for the construction of 3D- detectors
Authors:
M. Menichelli,
M. Bizzarri,
M. Boscardin,
M. Caprai,
A. P. Caricato,
G. A. P. Cirrone,
M. Crivellari,
I. Cupparo,
G. Cuttone,
S. Dunand,
L. Fanò,
O. Hammad,
M. Ionica,
K. Kanxheri,
M. Large,
G. Maruccio,
A. G. Monteduro,
A. Morozzi,
F. Moscatelli,
A. Papi,
D. Passeri,
M. Petasecca,
G. Petringa,
G. Quarta,
S. Rizzato
, et al. (7 additional authors not shown)
Abstract:
Hydrogenated Amorphous Silicon (a-Si:H) is a material well known for its intrinsic radiation hardness and is primarily utilized in solar cells as well as for particle detection and dosimetry. Planar p-i-n diode detectors are fabricated entirely by means of intrinsic and doped PECVD of a mixture of Silane (SiH4) and molecular Hydrogen. In order to develop 3D detector geometries using a-Si:H, two op…
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Hydrogenated Amorphous Silicon (a-Si:H) is a material well known for its intrinsic radiation hardness and is primarily utilized in solar cells as well as for particle detection and dosimetry. Planar p-i-n diode detectors are fabricated entirely by means of intrinsic and doped PECVD of a mixture of Silane (SiH4) and molecular Hydrogen. In order to develop 3D detector geometries using a-Si:H, two options for the junction fabrication have been considered: ion implantation and charge selective contacts through atomic layer deposition. In order to test the functionality of the charge selective contact electrodes, planar detectors have been fabricated utilizing this technique. In this paper, we provide a general overview of the 3D fabrication project followed by the results of leakage current measurements and x-ray dosimetric tests performed on planar diodes containing charge selective contacts to investigate the feasibility of the charge selective contact methodology for integration with the proposed 3D detector architectures.
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Submitted 3 February, 2022; v1 submitted 30 September, 2021;
originally announced September 2021.
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Study of p-type silicon MOS capacitors at HL-LHC radiation levels through cobalt-60 gamma source and TCAD simulation
Authors:
Patrick Asenov,
Panagiotis Assiouras,
Argiro Boziari,
Konstantinos Filippou,
Ioannis Kazas,
Aristotelis Kyriakis,
Dimitrios Loukas,
Arianna Morozzi,
Francesco Moscatelli,
Daniele Passeri
Abstract:
During the era of the High Luminosity LHC (HL-LHC) the devices in its experiments will be subjected to increased radiation levels with high fluxes of neutrons and charged hadrons, especially in the inner detectors. A systematic program of radiation tests with neutrons and charged hadrons is being carried out by the CMS and ATLAS Collaborations in view of the upgrade of the experiments, in order to…
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During the era of the High Luminosity LHC (HL-LHC) the devices in its experiments will be subjected to increased radiation levels with high fluxes of neutrons and charged hadrons, especially in the inner detectors. A systematic program of radiation tests with neutrons and charged hadrons is being carried out by the CMS and ATLAS Collaborations in view of the upgrade of the experiments, in order to cope with the higher luminosity at HL-LHC and the associated increase in the pile-up events and radiation fluxes. In this work, results from a complementary radiation study with $^{60}$Co-$γ$ photons are presented. The doses are equivalent to those that the outer layers of the silicon tracker systems of the two big LHC experiments will be subjected to. The devices in this study are float-zone oxygenated p-type MOS capacitors. The results of CV measurements on these devices are presented as a function of the total absorbed radiation dose following a specific annealing protocol. The measurements are compared with the results of a TCAD simulation.
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Submitted 4 March, 2021;
originally announced March 2021.
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Hydrogenated amorphous silicon detectors for particle detection, beam flux monitoring and dosimetry in high-dose radiation environment
Authors:
Mauro Menichelli,
Maurizio Boscardin,
Michele Crivellari,
Jeremy Davis,
Silvan Dunand,
Livio Fanò,
Arianna Morozzi,
Francesco Moscatelli,
Maria Movileanu-Ionica,
Daniele Passeri,
Marco Petasecca,
Mauro Piccini,
Alessandro Rossi,
Andrea Scorzoni,
Leonello Servoli,
Giovanni Verzellesi,
Nicolas Wyrsch
Abstract:
Hydrogenated amorphous silicon (a-Si:H) has remarkable radiation resistance properties and can be deposited on a lot of different substrates. A-Si:H based particle detectors have been built since mid 1980s as planar p-i-n or Schottky diode structures; the thickness of these detectors ranged from 1 to 50 micron. However MIP detection using planar structures has always been problematic due to the po…
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Hydrogenated amorphous silicon (a-Si:H) has remarkable radiation resistance properties and can be deposited on a lot of different substrates. A-Si:H based particle detectors have been built since mid 1980s as planar p-i-n or Schottky diode structures; the thickness of these detectors ranged from 1 to 50 micron. However MIP detection using planar structures has always been problematic due to the poor S/N ratio related to the high leakage current at high depletion voltage and the low charge collection efficiency. The usage of 3D detector architecture can be beneficial for the possibility to reduce inter-electrode distance and increase the thickness of the detector for larger charge generation compared to planar structures. Such a detector can be used for future hadron colliders for its radiation resistance and also for X-ray imaging. Furthermore the possibility of a-Si:H deposition on flexible materials (like kapton) can be exploited to build flexible and thin beam flux measurement detectors and x-ray dosimeters.
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Submitted 25 February, 2020;
originally announced February 2020.
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Recent Results from Polycrystalline CVD Diamond Detectors
Authors:
RD42 Collaboration,
L. Bäni,
A. Alexopoulos,
M. Artuso,
F. Bachmair,
M. Bartosik,
H. Beck,
V. Bellini,
V. Belyaev,
B. Bentele,
A. Bes,
J. -M. Brom,
M. Bruzzi,
G. Chiodini,
D. Chren,
V. Cindro,
G. Claus,
J. Collot,
J. Cumalat,
A. Dabrowski,
R. D'Alessandro,
D. Dauvergne,
W. de Boer,
C. Dorfer,
M. Dünser
, et al. (87 additional authors not shown)
Abstract:
Diamond is a material in use at many nuclear and high energy facilities due to its inherent radiation tolerance and ease of use. We have characterized detectors based on chemical vapor deposition (CVD) diamond before and after proton irradiation. We present preliminary results of the spatial resolution of unirradiated and irradiated CVD diamond strip sensors. In addition, we measured the pulse hei…
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Diamond is a material in use at many nuclear and high energy facilities due to its inherent radiation tolerance and ease of use. We have characterized detectors based on chemical vapor deposition (CVD) diamond before and after proton irradiation. We present preliminary results of the spatial resolution of unirradiated and irradiated CVD diamond strip sensors. In addition, we measured the pulse height versus particle rate of unirradiated and irradiated polycrystalline CVD (pCVD) diamond pad detectors up to a particle flux of $20\,\mathrm{MHz/cm^2}$ and a fluence up to $4 \times 10^{15}\,n/\mathrm{cm^2}$.
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Submitted 16 October, 2019;
originally announced October 2019.
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Test Beam Performance Measurements for the Phase I Upgrade of the CMS Pixel Detector
Authors:
M. Dragicevic,
M. Friedl,
J. Hrubec,
H. Steininger,
A. Gädda,
J. Härkönen,
T. Lampén,
P. Luukka,
T. Peltola,
E. Tuominen,
E. Tuovinen,
A. Winkler,
P. Eerola,
T. Tuuva,
G. Baulieu,
G. Boudoul,
L. Caponetto,
C. Combaret,
D. Contardo,
T. Dupasquier,
G. Gallbit,
N. Lumb,
L. Mirabito,
S. Perries,
M. Vander Donckt
, et al. (462 additional authors not shown)
Abstract:
A new pixel detector for the CMS experiment was built in order to cope with the instantaneous luminosities anticipated for the Phase~I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking with a reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and allows operation at low comparator…
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A new pixel detector for the CMS experiment was built in order to cope with the instantaneous luminosities anticipated for the Phase~I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking with a reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and allows operation at low comparator thresholds. In this paper, comprehensive test beam studies are presented, which have been conducted to verify the design and to quantify the performance of the new detector assemblies in terms of tracking efficiency and spatial resolution. Under optimal conditions, the tracking efficiency is $99.95\pm0.05\,\%$, while the intrinsic spatial resolutions are $4.80\pm0.25\,μ\mathrm{m}$ and $7.99\pm0.21\,μ\mathrm{m}$ along the $100\,μ\mathrm{m}$ and $150\,μ\mathrm{m}$ pixel pitch, respectively. The findings are compared to a detailed Monte Carlo simulation of the pixel detector and good agreement is found.
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Submitted 1 June, 2017;
originally announced June 2017.
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Modeling of Radiation Damage Effects in Silicon Detectors at High Fluences HL-LHC with Sentaurus TCAD
Authors:
Daniele Passeri,
Francesco Moscatelli,
Arianna Morozzi,
GianMario Bilei
Abstract:
In this work we propose the application of an enhanced radiation damage model based on the introduction of deep level traps / recombination centers suitable for device level numerical simulation of silicon detectors at very high fluences (e.g. 2.0x10E16 1 MeV equivalent neutrons/cm2). We present the comparison between simulation results and experimental data for p-type substrate structures in diff…
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In this work we propose the application of an enhanced radiation damage model based on the introduction of deep level traps / recombination centers suitable for device level numerical simulation of silicon detectors at very high fluences (e.g. 2.0x10E16 1 MeV equivalent neutrons/cm2). We present the comparison between simulation results and experimental data for p-type substrate structures in different operating conditions (temperature and biasing voltages) for fluences up to 2.2x10E16 neutrons/cm2. The good agreement between simulation findings and experimental measurements fosters the application of this modeling scheme to the optimization of the next silicon detectors to be used at HL-LHC.
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Submitted 30 November, 2016;
originally announced November 2016.
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Combined Bulk and Surface Radiation Damage Effects at Very High Fluences in Silicon Detectors: Measurements and TCAD Simulations
Authors:
F. Moscatelli,
D. Passeri,
A. Morozzi,
Roberto Mendicino,
G. -F. Dalla Betta,
G. M. Bilei
Abstract:
In this work we propose a new combined TCAD radiation damage modelling scheme, featuring both bulk and surface radiation damage effects, for the analysis of silicon detectors aimed at the High Luminosity LHC. In particular, a surface damage model has been developed by introducing the relevant parameters (NOX, NIT) extracted from experimental measurements carried out on p-type substrate test struct…
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In this work we propose a new combined TCAD radiation damage modelling scheme, featuring both bulk and surface radiation damage effects, for the analysis of silicon detectors aimed at the High Luminosity LHC. In particular, a surface damage model has been developed by introducing the relevant parameters (NOX, NIT) extracted from experimental measurements carried out on p-type substrate test structures after gamma irradiations at doses in the range 10-500 Mrad(Si). An extended bulk model, by considering impact ionization and deep-level cross-sections variation, was included as well. The model has been validated through the comparison of the simulation findings with experimental measurements carried out at very high fluences (2 10^16 1 MeV equivalent n/cm^2) thus fostering the application of this TCAD approach for the design and optimization of the new generation of silicon detectors to be used in future HEP experiments.
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Submitted 30 November, 2016;
originally announced November 2016.
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Measurements and TCAD Simulations of Bulk and Surface Radiation Damage Effects in Silicon Detectors
Authors:
F. Moscatelli,
P. Maccagnani,
D. Passeri,
G. M. Bilei,
L. Servoli,
A. Morozzi,
G. -F. Dalla Betta,
R. Mendicino,
M. Boscardin,
N. Zorzi
Abstract:
In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1÷2 10^16 1-MeV equivalent neutrons per square centimeter) combined with a surface damage model developed by using experimental parameters extracted from measurements…
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In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1÷2 10^16 1-MeV equivalent neutrons per square centimeter) combined with a surface damage model developed by using experimental parameters extracted from measurements from gamma irradiated p-type dedicated test structures.
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Submitted 30 November, 2016;
originally announced November 2016.
