Showing 1–8 of 8 results for author: Muratore, C

Two-step conversion of metal and metal oxide precursor films to 2D transition metal dichalcogenides and heterostructures

Authors: Michael Altvater, Christopher Muratore, Michael Snure, Nicholas Glavin

Abstract: From the laboratory to real-world applications, synthesis of two dimensional (2D) materials requires modular techniques to control morphology, structure, chemistry, and the plethora of exciting properties arising from these nanoscale materials. In this review, we explore one of the many available synthesis techniques; the extremely versatile two-step conversion (2SC) method. The 2SC technique reli… ▽ More From the laboratory to real-world applications, synthesis of two dimensional (2D) materials requires modular techniques to control morphology, structure, chemistry, and the plethora of exciting properties arising from these nanoscale materials. In this review, we explore one of the many available synthesis techniques; the extremely versatile two-step conversion (2SC) method. The 2SC technique relies on deposition of a metal or metal oxide film, followed by reaction with a chalcogen vapor at an elevated temperature, converting the precursor film to a crystalline transition metal dichalcogenide (TMD). Herein, we consider the variables at each step of the 2SC process including the impact of the precursor film material and deposition technique, the influence of gas composition and temperature during conversion, as well as other factors controlling high quality 2D TMD synthesis. We feature the specific advantages to the 2SC approach including deposition on diverse substrates, low temperature processing, orientation control, and heterostructure synthesis, among others. Finally, emergent opportunities that take advantage of the 2SC approach are discussed to include next generation electronics, sensing, and optoelectronic devices as well as catalysis for energy-related applications; spotlighting the great potential of the 2SC technique. △ Less

Submitted 29 January, 2024; originally announced January 2024.

Ultrathin Broadband Metasurface Superabsorbers from a van der Waals Semimetal

Authors: Adam D. Alfieri, Michael J. Motala, Michael Snure, Jason Lynch, Pawan Kumar, Huiqin Zhang, Susanna Post, Christopher Muratore, Joshua R. Hendrickson, Nicholas R. Glavin, Deep Jariwala

Abstract: Metamaterials and metasurfaces operating in the visible and near-infrared (NIR) offer a promising route towards next-generation photodetectors and devices for solar energy harvesting. While numerous metamaterials and metasurfaces using metals and semiconductors have been demonstrated, semimetals-based metasurfaces in the vis-NIR range are notably missing. Here, we experimentally demonstrate a broa… ▽ More Metamaterials and metasurfaces operating in the visible and near-infrared (NIR) offer a promising route towards next-generation photodetectors and devices for solar energy harvesting. While numerous metamaterials and metasurfaces using metals and semiconductors have been demonstrated, semimetals-based metasurfaces in the vis-NIR range are notably missing. Here, we experimentally demonstrate a broadband metasurface superabsorber based on large area, semimetallic, van der Waals PtSe2 thin films in agreement with electromagnetic simulations. Our results show that PtSe2 is an ultrathin and scalable semimetal that concurrently possesses high index and high extinction across the vis-NIR range. Consequently, the thin-film PtSe2 on a reflector separated by a dielectric spacer can absorb > 85 % for the unpatterned case and ~97 % for the optimized 2D metasurface in the 400-900 nm range making it one of the strongest and thinnest broadband perfect absorbers to date. Our results present a scalable approach to photodetection and solar energy harvesting, demonstrating the practical utility of high index, high extinction semimetals for nanoscale optics. △ Less

Submitted 28 August, 2022; originally announced August 2022.

High throughput data-driven design of laser crystallized 2D MoS2 chemical sensors

Authors: Drake Austin, Paige Miesle, Deanna Sessions, Michael Motala, David Moore, Griffin Beyer, Adam Miesle, Andrew Sarangan, Amritanand Sebastian, Saptarshi Das, Anand Puthirath, Xiang Zhang, Jordan Hachtel, Pulickel Ajayan, Tyson Back, Peter Stevenson, Michael Brothers, Steven Kim, Philip Buskohl, Rahul Rao, Christopher Muratore, Nicholas Glavin

Abstract: High throughput characterization and processing techniques are becoming increasingly necessary to navigate multivariable, data-driven design challenges for sensors and electronic devices. For two-dimensional materials, device performance is highly dependent upon a vast array of material properties including number of layers, lattice strain, carrier concentration, defect density, and grain structur… ▽ More High throughput characterization and processing techniques are becoming increasingly necessary to navigate multivariable, data-driven design challenges for sensors and electronic devices. For two-dimensional materials, device performance is highly dependent upon a vast array of material properties including number of layers, lattice strain, carrier concentration, defect density, and grain structure. In this work, laser-crystallization was used to locally pattern and transform hundreds of regions of amorphous MoS2 thin films into 2D 2H-MoS2. A high throughput Raman spectroscopy approach was subsequently used to assess the process-dependent structural and compositional variations for each illuminated region, yielding over 5500 distinct non-resonant, resonant, and polarized Raman spectra. The rapid generation of a comprehensive library of structural and compositional data elucidated important trends between structure-property-processing relationships involving laser-crystallized MoS2, including the relationships between grain size, grain orientation, and intrinsic strain. Moreover, extensive analysis of structure/property relationships allowed for intelligent design, and evaluation of major contributions to, device performance in MoS2 chemical sensors. In particular, it is found that sensor performance is strongly dependent on the orientation of the MoS2 grains relative to the crystal plane. △ Less

Submitted 26 January, 2022; originally announced January 2022.

Scalable synthesis of 2D van der Waals superlattices

Authors: Michael J. Motala, Xiang Zhang, Pawan Kumar, Eliezer F. Oliveira, Anna Benton, Paige Miesle, Rahul Rao, Peter R. Stevenson, David Moore, Adam Alfieri, Jason Lynch, Guanhui Gao, Sijie Ma, Hanyu Zhu, Zhe Wang, Ivan Petrov, Eric A. Stach, W. Joshua Kennedy, Shiva Vengala, James M. Tour, Douglas S. Galvao, Deep Jariwala, Christopher Muratore, Michael Snure, Pulickel M. Ajayan , et al. (1 additional authors not shown)

Abstract: Heterostructure materials form the basis of much of modern electronics, from transistors to lasers and light-emitting diodes. Recent years have seen a renewed focus on creating heterostructures through the vertical integration of two-dimensional materials, including graphene, hexagonal boron nitride, and transition metal dichalcogenides (TMDCs). However, fundamental challenges associated with mate… ▽ More Heterostructure materials form the basis of much of modern electronics, from transistors to lasers and light-emitting diodes. Recent years have seen a renewed focus on creating heterostructures through the vertical integration of two-dimensional materials, including graphene, hexagonal boron nitride, and transition metal dichalcogenides (TMDCs). However, fundamental challenges associated with materials processing have limited material quality and impeded scalability. We demonstrate a method to convert sub-nanometer metal films deposited on silicon and sapphire into TMDC heterostructures through vapor-phase processing. The resulting heterostructures and superlattices exhibit novel properties compared with stand-alone TMDCs, including reduced bandgap, enhanced light-matter coupling, and improved catalytic performance. This robust and scalable synthetic method provides new opportunities to generate a wide range of artificially stacked 2D superlattices with controlled morphology and composition. △ Less

Submitted 4 November, 2021; originally announced November 2021.

Synthesis and Tailored Properties Towards Designer Covalent Organic Framework Thin Films and Heterostructures

Authors: Lucas K. Beagle, Qiyi Fang, Ly D. Tran, Luke A. Baldwin, Christopher Muratore, Jun Lou, Nicholas R. Glavin

Abstract: Porous polymeric covalent organic frameworks (COFs) have been under intense synthetic investigation with over 100 unique structural motifs known. In order to realize the true potential of these materials, converting the powders into thin films with strict control of thickness and morphology is necessary and accomplished through techniques including interfacial synthesis, chemical exfoliation and m… ▽ More Porous polymeric covalent organic frameworks (COFs) have been under intense synthetic investigation with over 100 unique structural motifs known. In order to realize the true potential of these materials, converting the powders into thin films with strict control of thickness and morphology is necessary and accomplished through techniques including interfacial synthesis, chemical exfoliation and mechanical delamination. Recent progress in the construction and tailored properties of thin film COFs are highlighted in this review, addressing mechanical properties as well as application-focused properties in filtration, electronics, sensors, electrochemical, magnetics, optoelectronics and beyond. Additionally, heterogeneous integration of these thin films with other inorganic and organic materials is discussed, revealing exciting opportunities to integrate COF thin films with other state of the art material and device systems. △ Less

Submitted 26 May, 2021; originally announced May 2021.

Light-Matter Coupling in Scalable Van der Waals Superlattices

Authors: Pawan Kumar, Jason Lynch, Baokun Song, Haonan Ling, Francisco Barrera, Huiqin Zhang, Surendra B. Anantharaman, Jagrit Digani, Haoyue Zhu, Tanushree H. Choudhury, Clifford McAleese, Xiaochen Wang, Ben R. Conran, Oliver Whear, Michael J. Motala, Michael Snure, Christopher Muratore, Joan M. Redwing, Nicholas R. Glavin, Eric A. Stach, Artur R. Davoyan, Deep Jariwala

Abstract: Two-dimensional (2D) crystals have renewed opportunities in design and assembly of artificial lattices without the constraints of epitaxy. However, the lack of thickness control in exfoliated van der Waals (vdW) layers prevents realization of repeat units with high fidelity. Recent availability of uniform, wafer-scale samples permits engineering of both electronic and optical dispersions in stacks… ▽ More Two-dimensional (2D) crystals have renewed opportunities in design and assembly of artificial lattices without the constraints of epitaxy. However, the lack of thickness control in exfoliated van der Waals (vdW) layers prevents realization of repeat units with high fidelity. Recent availability of uniform, wafer-scale samples permits engineering of both electronic and optical dispersions in stacks of disparate 2D layers with multiple repeating units. We present optical dispersion engineering in a superlattice structure comprised of alternating layers of 2D excitonic chalcogenides and dielectric insulators. By carefully designing the unit cell parameters, we demonstrate > 90 % narrowband absorption in < 4 nm active layer excitonic absorber medium at room temperature, concurrently with enhanced photoluminescence in cm2 samples. These superlattices show evidence of strong light-matter coupling and exciton-polariton formation with geometry-tunable coupling constants. Our results demonstrate proof of concept structures with engineered optical properties and pave the way for a broad class of scalable, designer optical metamaterials from atomically-thin layers. △ Less

Submitted 25 March, 2021; originally announced March 2021.

Comments: 4 figures + supporting

Direct Opto-Electronic Imaging of 2D Semiconductor - 3D Metal Buried Interfaces

Authors: Kiyoung Jo, Pawan Kumar, Joseph Orr, Surendra B. Anantharaman, Jinshui Miao, Michael Motala, Arkamita Bandyopadhyay, Kim Kisslinger, Christopher Muratore, Vivek B. Shenoy, Eric Stach, Nicholas Glavin, Deep Jariwala

Abstract: The semiconductor-metal junction is one of the most critical factors for high performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing the voltage drop at this junction is particularly challenging and important. Despite numerous studies concerning contact resistance in 2D semiconductors, the exact nature of the buried interface under a three-dimensional (3D) metal… ▽ More The semiconductor-metal junction is one of the most critical factors for high performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing the voltage drop at this junction is particularly challenging and important. Despite numerous studies concerning contact resistance in 2D semiconductors, the exact nature of the buried interface under a three-dimensional (3D) metal remains unclear. Herein, we report the direct measurement of electrical and optical responses of 2D semiconductor-metal buried interfaces using a recently developed metal-assisted transfer technique to expose the buried interface which is then directly investigated using scanning probe techniques. We characterize the spatially varying electronic and optical properties of this buried interface with < 20 nm resolution. To be specific, potential, conductance and photoluminescence at the buried metal/MoS$_2$ interface are correlated as a function of a variety of metal deposition conditions as well as the type of metal contacts. We observe that direct evaporation of Au on MoS$_2$ induces a large strain of ~5% in the MoS$_2$ which, coupled with charge transfer, leads to degenerate doping of the MoS$_2$ underneath the contact. These factors lead to improvement of contact resistance to record values of 138 kohm-um, as measured using local conductance probes. This approach was adopted to characterize MoS$_2$-In/Au alloy interfaces, demonstrating contact resistance as low as 63 kohm-um. Our results highlight that the MoS$_2$/Metal interface is sensitive to device fabrication methods, and provides a universal strategy to characterize buried contact interfaces involving 2D semiconductors. △ Less

Submitted 28 January, 2021; originally announced January 2021.

Comments: 6 figures + supplement

Journal ref: ACS Nano 2021

Transferrable AlGaN/GaN HEMTs to Arbitrary Substrates via a Two-dimensional Boron Nitride Release Layer

Authors: Michael J. Motala, Eric Blanton, Al Hilton, Eric Heller, Chris Muratore, Katherine Burzynski, Jeff Brown, Kelson Chabak, Michael Durstock, Michael Snure, Nicholas Glavin

Abstract: Mechanical transfer of high performing thin film devices onto arbitrary substrates represents an exciting opportunity to improve device performance, explore non-traditional manufacturing approaches, and paves the way for soft, conformal, and flexible electronics. Using a two-dimensional (2D) boron nitride (BN) release layer, we demonstrate the transfer of AlGaN/GaN high-electron mobility transisto… ▽ More Mechanical transfer of high performing thin film devices onto arbitrary substrates represents an exciting opportunity to improve device performance, explore non-traditional manufacturing approaches, and paves the way for soft, conformal, and flexible electronics. Using a two-dimensional (2D) boron nitride (BN) release layer, we demonstrate the transfer of AlGaN/GaN high-electron mobility transistors (HEMTs) to arbitrary substrates through both direct van der Waals (vdW) bonding and with a polymer adhesive interlayer. No device degradation was observed due to the transfer process, and a significant reduction in device temperature (327 °C to 132 °C at 600 mW) was observed when directly bonded to a silicon carbide (SiC) wafer relative to the starting wafer. With the use of a benzocyclobutene (BCB) adhesion interlayer, devices were easily transferred and characterized on Kapton and ceramic films, representing an exciting opportunity for integration onto arbitrary substrates. Upon reduction of this polymer adhesive layer thickness, the AlGaN/GaN HEMTs transferred onto a BCB/SiC substrate resulted in comparable peak temperatures during operation at powers as high as 600 mW to the as-grown wafer, revealing that by optimizing interlayer characteristics such as thickness and thermal conductivity, transferrable devices on polymer layers can still improve performance outputs. △ Less

Submitted 7 February, 2020; originally announced February 2020.

Comments: 21 pages, 4 figures