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Physics of excitons in layered BiI$_{3}$. Effects of dimensionality and crystal anisotropy
Authors:
Jorge Cervantes-Villanueva,
Fulvio Paleari,
Alberto García-Cristóbal,
Davide Sangalli,
Alejandro Molina-Sánchez
Abstract:
We carry out a detailed theoretical study of the electronic and optical properties of bulk and monolayer bismuth triiodide (BiI$_{3}$), a layered metal halide, using the ab initio GW+BSE scheme with a full spinorial formulation. We discuss in detail the effects due to the change of dimensionality and the role of spin-orbit coupling. Moreover, we compute the exciton dispersion by solving the BSE at…
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We carry out a detailed theoretical study of the electronic and optical properties of bulk and monolayer bismuth triiodide (BiI$_{3}$), a layered metal halide, using the ab initio GW+BSE scheme with a full spinorial formulation. We discuss in detail the effects due to the change of dimensionality and the role of spin-orbit coupling. Moreover, we compute the exciton dispersion by solving the BSE at finite momentum, also analysing transverse (TE) and longitudinal (LE) excitons, and the L-T splitting at $\bf{q}\approxΓ$. The results provide a reference for future experimental measurements. In addition, the interplay between spin-orbit coupling and large binding energy, together with the role of quantum confinement, confirm that BiI$_{3}$ is an interesting material for opto-electronic applications and show that it is a good candidate for the study of exciton dynamics.
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Submitted 24 October, 2023;
originally announced October 2023.
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Distinguishing different stackings in layered materials via luminescence spectroscopy
Authors:
Matteo Zanfrognini,
Alexandre Plaud,
Ingrid Stenger,
Frédéric Fossard,
Lorenzo Sponza,
Léonard Schué,
Fulvio Paleari,
Elisa Molinari,
Daniele Varsano,
Ludger Wirtz,
François Ducastelle,
Annick Loiseau,
Julien Barjon
Abstract:
Despite its simple crystal structure, layered boron nitride features a surprisingly complex variety of phonon-assisted luminescence peaks. We present a combined experimental and theoretical study on ultraviolet-light emission in hexagonal and rhombohedral bulk boron nitride crystals. Emission spectra of high-quality samples are measured via cathodoluminescence spectroscopy, displaying characterist…
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Despite its simple crystal structure, layered boron nitride features a surprisingly complex variety of phonon-assisted luminescence peaks. We present a combined experimental and theoretical study on ultraviolet-light emission in hexagonal and rhombohedral bulk boron nitride crystals. Emission spectra of high-quality samples are measured via cathodoluminescence spectroscopy, displaying characteristic differences between the two polytypes. These differences are explained using a fully first-principles computational technique that takes into account radiative emission from ``indirect'', finite-momentum, excitons via coupling to finite-momentum phonons. We show that the differences in peak positions, number of peaks and relative intensities can be qualitatively and quantitatively explained, once a full integration over all relevant momenta of excitons and phonons is performed.
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Submitted 27 May, 2023;
originally announced May 2023.
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Quenching of low-energy optical absorption in bilayer C$_3$N polytypes
Authors:
Matteo Zanfrognini,
Miki Bonacci,
Fulvio Paleari,
Elisa Molinari,
Alice Ruini,
Andrea Ferretti,
Marilia J. Caldas,
Daniele Varsano
Abstract:
In this work we provide a first principles description of the electronic and optical properties of bilayers C$_3$N, with different stacking motifs AB, AB$'$ and AA$'$. Starting from quasi-particle electronic band-structures, we solve the Bethe Salpeter Equation (BSE) to access the excitonic properties of these bilayers. For all stacking sequences, we see strong optical absorption at energies lower…
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In this work we provide a first principles description of the electronic and optical properties of bilayers C$_3$N, with different stacking motifs AB, AB$'$ and AA$'$. Starting from quasi-particle electronic band-structures, we solve the Bethe Salpeter Equation (BSE) to access the excitonic properties of these bilayers. For all stacking sequences, we see strong optical absorption at energies lower than but close to that of the monolayer. Most relevant, we predict a strong quenching of the low-energy optical absorption, with negligible oscillator strength of low-lying bound excitons. This is a unique phenomenology that does not arise in the monolayer case, nor in other common homo-bilayers. We explain these findings in terms of the small interband dipole matrix elements associated to the valence-conduction transitions involved in these excitons, and discuss them in view of the different stacking motifs.
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Submitted 18 February, 2023;
originally announced February 2023.
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First-principles study of luminescence in hexagonal boron nitride single layer: exciton-phonon coupling and the role of substrate
Authors:
Pierre Lechifflart,
Fulvio Paleari,
Davide Sangalli,
Claudio Attaccalite
Abstract:
Hexagonal boron nitride (hBN) is a wide band gap material with both strong excitonic light emission in the ultraviolet and strong exciton-phonon coupling. Luminescence experiments performed on the recently synthesized monolayer form (m-hBN) present emission spectra that differ from one another, with some suggesting a coexistence between phonon-assisted and direct emission channels. Motivated by th…
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Hexagonal boron nitride (hBN) is a wide band gap material with both strong excitonic light emission in the ultraviolet and strong exciton-phonon coupling. Luminescence experiments performed on the recently synthesized monolayer form (m-hBN) present emission spectra that differ from one another, with some suggesting a coexistence between phonon-assisted and direct emission channels. Motivated by these results, we investigated the optical response of (m-hBN) using a new \textit{ab initio} approach that takes into account the effects of atomic vibrations on the luminescence spectra. We construct the dynamical exciton-phonon self-energy, then use it to perturbatively correct the optical response functions and test this approach on bulk hBN as a benchmark. Within our approach we are able to estimate the renormalisation of the direct peak induced by phonon-assisted transitions, and this allows us to accurately describe spectra where both processes are present. We found that the emission signal of m-hBN is strongly dependent on its interaction with the substrate, which changes its nature from direct to indirect material and modifies the screening felt by the electrons. We attribute the m-hBN emission signal to the bright direct excitons and consider the likelihood of phonon replicas appearing.
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Submitted 27 February, 2023; v1 submitted 20 December, 2022;
originally announced December 2022.
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Intrinsic control of interlayer exciton generation rate in van der Waals materials via Janus layers
Authors:
Engin Torun,
Fulvio Paleari,
Milorad V. Milosevic,
Ludger Wirtz,
Cem Sevik
Abstract:
We demonstrate the possibility of engineering the optical properties of transition metal dichalcogenide heterobilayers when one of the constitutive layers has a Janus structure. This has important consequences for the charge separation efficiency. We investigate different MoS$_2$@Janus layer combinations using first-principles methods including electron-hole interactions (excitons) and exciton-pho…
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We demonstrate the possibility of engineering the optical properties of transition metal dichalcogenide heterobilayers when one of the constitutive layers has a Janus structure. This has important consequences for the charge separation efficiency. We investigate different MoS$_2$@Janus layer combinations using first-principles methods including electron-hole interactions (excitons) and exciton-phonon coupling. The direction of the intrinsic electric field from the Janus layer modifies the electronic band alignments and, consequently, the energy separation between interlayer exciton states -- which usually have a very low oscillator strength and hence are almost dark in absorption -- and bright in-plane excitons. We find that in-plane lattice vibrations strongly couple the two states, so that exciton-phonon scattering may be a viable generation mechanism for interlayer excitons upon light absorption. In particular, in the case of MoS$_2$@WSSe, the energy separation of the low-lying interlayer exciton from the in-plane exciton is resonant with the transverse optical phonon modes (40 meV). We thus identify this heterobilayer as a prime candidate for efficient electron-hole pair generation with efficient charge carrier separation.
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Submitted 11 December, 2022;
originally announced December 2022.
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Surface termination dependence of electronic and optical properties in Ti$_2$CO$_2$ MXene monolayers
Authors:
Zafer Kandemir,
Engin Torun,
Fulvio Paleari,
Celal Yelgel,
Cem Sevik
Abstract:
Two-dimensional (2D) MXenes are a rapid growing family of 2D materials with rich physical and chemical properties where their surface termination plays an essential role. Among the various 2D MXenes, functionalization of the Ti$_{n}$C$_{n-1}$ phase with oxygen (O) atoms makes them attractive for optoelectronic applications due to their optical gap residing in the infrared or visible region. In thi…
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Two-dimensional (2D) MXenes are a rapid growing family of 2D materials with rich physical and chemical properties where their surface termination plays an essential role. Among the various 2D MXenes, functionalization of the Ti$_{n}$C$_{n-1}$ phase with oxygen (O) atoms makes them attractive for optoelectronic applications due to their optical gap residing in the infrared or visible region. In this manuscript, we theoretically investigate the electronic and optical properties of four different O-atom-functionalized Ti$_{n}$C$_{n-1}$ MXene monolayers using state-of-the-art, first-principles techniques. In particular, we calculate the quasiparticle corrections on top of density functional theory (DFT) at the GW level and the exciton-dominated optical spectra by solving the Bethe-Salpeter equation (BSE) also at finite momentum. We find that all but one of the monolayer models are indirect band gap semiconductors where quasiparticle corrections are very important ($\sim 1$ eV). The optical spectra are instead dominated by direct and indirect excitons with large binding energies (between $0.5$ and $1$ eV). Most direct excitons lie above $1.5$ eV, while the indirect ones are below: therefore, we conclude that Ti$_{n}$C$_{n-1}$ should display strong absorption in the visible region, but phonon-assisted emission in the infrared. Our work thus reveals the potential usage of surface terminations to tune the optical and electronic properties of Ti$_{n}$C$_{n-1}$ MXene monolayers, while emphasizing the pivotal role of many-body effects beyond DFT to obtain accurate prediction for these systems.
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Submitted 21 September, 2022;
originally announced September 2022.
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Exciton-phonon interaction calls for a revision of the "exciton" concept
Authors:
Fulvio Paleari,
Andrea Marini
Abstract:
The concept of \textit{optical} exciton - a photo-excited bound electron-hole pair within a crystal - is routinely used to interpret and model a wealth of excited-state phenomena in semiconductors. Beside originating sub-band gap signatures in optical spectra, optical excitons have also been predicted to condensate, diffuse, recombine, relax. However, all these phenomena are rooted on a theoretica…
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The concept of \textit{optical} exciton - a photo-excited bound electron-hole pair within a crystal - is routinely used to interpret and model a wealth of excited-state phenomena in semiconductors. Beside originating sub-band gap signatures in optical spectra, optical excitons have also been predicted to condensate, diffuse, recombine, relax. However, all these phenomena are rooted on a theoretical definition of the excitonic state based on the following simple picture: "excitons" are actual particles that both appear as peaks in the linear absorption spectrum and also behave as well-defined quasiparticles. In this paper we show, instead, that the electron-phonon interaction decomposes the initial optical excitons into \textit{elemental} excitons, the latter being a different kind of bound electron-hole pairs lacking the effect caused by the induced, classical, electric field. This is demonstrated within a many-body perturbation theory approach starting from the interacting electronic Hamiltonian including both electron-phonon and electron-hole interactions. We then apply the results on two realistic systems, monolayer MoS$_2$ (where the lowest-bound exciton is optically inactive) and monolayer MoSe$_2$ (where it is optically active), using first-principles methods to compute the exciton-phonon coupling matrix elements. Among the consequences of optical-elemental decomposition, we point to a homogeneous broadening of absorption peaks occurring even for the lowest-bound optical exciton, we demonstrate this by computing exciton-phonon transition rates. More generally, our findings suggest that the optical excitons gradually lose their initial structure and evolve as elemental excitons. These states can be regarded as the real intrinsic excitations of the interacting system, the ones that survive when the external perturbation and the induced electric fields have vanished.
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Submitted 19 August, 2022; v1 submitted 5 May, 2022;
originally announced May 2022.
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Excitons under strain: light absorption and emission in strained hexagonal boron nitride
Authors:
Pierre Lechifflart,
Fulvio Paleari,
Claudio Attaccalite
Abstract:
Hexagonal boron nitride is an indirect band gap material with a strong luminescence in the ultraviolet. This luminescence originates from bound excitons recombination assisted by different phonon modes. The coupling between excitons and phonons is so strong that the resulting light emission is as efficient as the one of direct band gap materials. In this manuscript we investigate how uniaxial stra…
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Hexagonal boron nitride is an indirect band gap material with a strong luminescence in the ultraviolet. This luminescence originates from bound excitons recombination assisted by different phonon modes. The coupling between excitons and phonons is so strong that the resulting light emission is as efficient as the one of direct band gap materials. In this manuscript we investigate how uniaxial strain modifies the electronic and optical properties of this material, and in particular how it affects the exciton-phonon coupling. Using a formulation of this coupling based on finite-difference displacements, recently developed by some of us, we investigate how phonon-assisted transitions change under strain. Our results open the way to the study of phonon-assisted luminescence in strained materials from first principles. Our findings are important both for experiments that directly probe \hbn under strain or for those in which it is used as substrate for other 2D material with a lattice mismatch.
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Submitted 4 May, 2022; v1 submitted 23 December, 2021;
originally announced December 2021.
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Radiative lifetime of free excitons in hexagonal boron nitride
Authors:
Sébastien Roux,
Christophe Arnold,
Fulvio Paleari,
Lorenzo Sponza,
Eli Janzen,
James H. Edgar,
Bérangère Toury,
Catherine Journet,
Vincent Garnier,
Philippe Steyer,
Takashi Taniguchi,
Kenji Watanabe,
François Ducastelle,
Annick Loiseau,
Julien Barjon
Abstract:
Using a new time-resolved cathodoluminescence system dedicated to the UV spectral range, we present a first estimate of the radiative lifetime of free excitons in hBN at room temperature. This is carried out from a single experiment giving both the absolute luminescence intensity under continuous excitation and the decay time of free excitons in the time domain. The radiative lifetime of indirect…
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Using a new time-resolved cathodoluminescence system dedicated to the UV spectral range, we present a first estimate of the radiative lifetime of free excitons in hBN at room temperature. This is carried out from a single experiment giving both the absolute luminescence intensity under continuous excitation and the decay time of free excitons in the time domain. The radiative lifetime of indirect excitons in hBN is equal to 27 ns, which is much shorter than in other indirect bandgap semiconductors. This is explained by the close proximity of the electron and the hole in the exciton complex, and also by the small energy difference between indirect and direct excitons. The unusually high luminescence efficiency of hBN for an indirect bandgap is therefore semi-quantitatively understood.
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Submitted 2 July, 2021;
originally announced July 2021.
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Electron--phonon interaction without overscreening: a strategy for first--principles modelling
Authors:
Fulvio Paleari,
Andrea Marini
Abstract:
State-of-the-art approaches to calculate the electron-phonon and the phonon-electron self-energy are based on a mean-field approximation for the interacting electronic system. This approach introduces an overscreening error which results in an underestimation of the electron-phonon coupling strength. We introduce a theoretical and numerical approach for the calculation of the phonon-electron self-…
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State-of-the-art approaches to calculate the electron-phonon and the phonon-electron self-energy are based on a mean-field approximation for the interacting electronic system. This approach introduces an overscreening error which results in an underestimation of the electron-phonon coupling strength. We introduce a theoretical and numerical approach for the calculation of the phonon-electron self-energy without the overscreening error. Starting from the out-of-equilibrium Kadanoff-Baym equations for the phonon propagator, we discuss and compare the overscreened (i.e., symmetrically screened) and overscreening--free (i.e., asymmetrically screened) cases. We point out that the difficulty in treating the latter stems from the static approximation to the dielectric function and from the need to obtain a self-energy that preserves the elementary scattering processes. We solve both problems in the equilibrium case by considering a manifestly symmetric form of the correct self-energy which can be easily calculated numerically and yields an overscreening--free coupling strength. Finally, we describe the numerical implementation of this treatment into the first--principles Yambo code for the calculations of phonon linewidths.
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Submitted 16 November, 2023; v1 submitted 20 May, 2021;
originally announced May 2021.
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Overscreening-free electron-phonon interaction in realistic materials
Authors:
Fulvio Paleari,
Andrea Marini
Abstract:
State-of-the-art model Hamiltonians, like Fröhlich's, or density functional theory approaches to electron-phonon interaction suffer from a severe overscreening error. This is due to the incorrect treatment of the screening of the ionic potential. We derive a correct formulation of the electron-phonon interaction and demonstrate its validity by numerically implementing the new scheme in a paradigma…
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State-of-the-art model Hamiltonians, like Fröhlich's, or density functional theory approaches to electron-phonon interaction suffer from a severe overscreening error. This is due to the incorrect treatment of the screening of the ionic potential. We derive a correct formulation of the electron-phonon interaction and demonstrate its validity by numerically implementing the new scheme in a paradigmatic material: MgB$_2$, a system whose double-gap, low-$T_c$ superconductivity depends on exceptionally high phonon linewidths. We find that the present treatment enhances the linewidths by $57 \%$ with respect to what has been previously reported for the anomalous $E_{2g}$ mode. We further discover that the $A_{2u}$ mode is also anomalous (its strong coupling being completely quenched by the overscreened expression). Our results deeply question methods based on state-of-the-art approaches and impact a wide range of fields such as thermal conductivity, phononic instabilities and non-equilibrium lattice dynamics.
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Submitted 16 November, 2023; v1 submitted 20 May, 2021;
originally announced May 2021.
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Many-body perturbation theory calculations using the yambo code
Authors:
D. Sangalli,
A. Ferretti,
H. Miranda,
C. Attaccalite,
I. Marri,
E. Cannuccia,
P. Melo,
M. Marsili,
F. Paleari,
A. Marrazzo,
G. Prandini,
P. Bonfà,
M. O. Atambo,
F. Affinito,
M. Palummo,
A. Molina-Sánchez,
C. Hogan,
M. Grüning,
D. Varsano,
A. Marini
Abstract:
yambo is an open source project aimed at studying excited state properties of condensed matter systems from first principles using many-body methods. As input, yambo requires ground state electronic structure data as computed by density functional theory codes such as quantum-espresso and abinit. yambo's capabilities include the calculation of linear response quantities (both independent-particle…
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yambo is an open source project aimed at studying excited state properties of condensed matter systems from first principles using many-body methods. As input, yambo requires ground state electronic structure data as computed by density functional theory codes such as quantum-espresso and abinit. yambo's capabilities include the calculation of linear response quantities (both independent-particle and including electron-hole interactions), quasi-particle corrections based on the GW formalism, optical absorption, and other spectroscopic quantities. Here we describe recent developments ranging from the inclusion of important but oft-neglected physical effects such as electron-phonon interactions to the implementation of a real-time propagation scheme for simulating linear and non-linear optical properties. Improvements to numerical algorithms and the user interface are outlined. Particular emphasis is given to the new and efficient parallel structure that makes it possible to exploit modern high performance computing architectures. Finally, we demonstrate the possibility to automate workflows by interfacing with the yambopy and AiiDA software tools.
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Submitted 7 June, 2019; v1 submitted 11 February, 2019;
originally announced February 2019.
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Exciton-phonon coupling in the UV absorption and emission spectra of bulk hexagonal boron nitride
Authors:
Fulvio Paleari,
Henrique P. C. Miranda,
Alejandro Molina-Sánchez,
Ludger Wirtz
Abstract:
We present an \textit{ab initio} method to calculate phonon-assisted absorption and emission spectra in the presence of strong excitonic effects. We apply the method to bulk hexagonal BN which has an indirect band gap and is known for its strong luminescence in the UV range. We first analyse the excitons at the wave vector $\overline{q}$ of the indirect gap. The coupling of these excitons with the…
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We present an \textit{ab initio} method to calculate phonon-assisted absorption and emission spectra in the presence of strong excitonic effects. We apply the method to bulk hexagonal BN which has an indirect band gap and is known for its strong luminescence in the UV range. We first analyse the excitons at the wave vector $\overline{q}$ of the indirect gap. The coupling of these excitons with the various phonon modes at $\overline{q}$ is expressed in terms of a product of the mean square displacement of the atoms and the second derivative of the optical response function with respect to atomic displacement along the phonon eigenvectors. The derivatives are calculated numerically with a finite difference scheme in a supercell commensurate with $\overline{q}$. We use detailed balance arguments to obtain the intensity ratio between emission and absorption processes. Our results explain recent luminescence experiments and reveal the exciton-phonon coupling channels responsible for the emission lines.
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Submitted 30 October, 2018; v1 submitted 21 October, 2018;
originally announced October 2018.
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Direct and indirect excitons in boron nitride polymorphs: a story of atomic configuration and electronic correlation
Authors:
Lorenzo Sponza,
Hakim Amara,
Claudio Attaccalite,
Sylvain Latil,
Thomas Galvani,
Fulvio Paleari,
Ludger Wirtz,
François Ducastelle
Abstract:
We compute and discuss the electronic band structure and excitonic dispersion of hexagonal boron nitride (hBN) in the single layer configuration and in three bulk polymorphs (usual AA' stacking, Bernal AB, and rhombohedral ABC). We focus on the changes in the electronic band structure and the exciton dispersion induced by the atomic configuration and the electron-hole interaction. Calculations are…
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We compute and discuss the electronic band structure and excitonic dispersion of hexagonal boron nitride (hBN) in the single layer configuration and in three bulk polymorphs (usual AA' stacking, Bernal AB, and rhombohedral ABC). We focus on the changes in the electronic band structure and the exciton dispersion induced by the atomic configuration and the electron-hole interaction. Calculations are carried out on the level of \textit{ab initio} many-body perturbation theory (GW and Bethe Salpeter equation) and by means of an appropriate tight-binding model. We confirm the change from direct to indirect electronic gap when going from single layer to bulk systems and we give a detailed account of its origin by comparing the effect of different stacking sequences. We emphasize that the inclusion of the electron-hole interaction is crucial for the correct description of the momentum-dependent dispersion of the excitations. It flattens the exciton dispersion with respect to the one obtained from the dispersion of excitations in the independent-particle picture. In the AB stacking this effect is particularly important as the lowest-lying exciton is predicted to be direct despite the indirect electronic band gap.
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Submitted 4 July, 2018; v1 submitted 16 June, 2018;
originally announced June 2018.
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Excitons in few-layer hexagonal boron nitride: Davydov splitting and surface localization
Authors:
Fulvio Paleari,
Thomas Galvani,
Hakim Amara,
François Ducastelle,
Alejandro Molina-Sánchez,
Ludger Wirtz
Abstract:
Hexagonal boron nitride (hBN) has been attracting great attention because of its strong excitonic effects. Taking into account few-layer systems, we investigate theoretically the effects of the number of layers on quasiparticle energies, absorption spectra, and excitonic states, placing particular focus on the Davydov splitting of the lowest bound excitons. We describe how the inter-layer interact…
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Hexagonal boron nitride (hBN) has been attracting great attention because of its strong excitonic effects. Taking into account few-layer systems, we investigate theoretically the effects of the number of layers on quasiparticle energies, absorption spectra, and excitonic states, placing particular focus on the Davydov splitting of the lowest bound excitons. We describe how the inter-layer interaction as well as the variation in electronic screening as a function of layer number $N$ affects the electronic and optical properties. Using both \textit{ab initio} simulations and a tight-binding model for an effective Hamiltonian describing the excitons, we characterize in detail the symmetry of the excitonic wavefunctions and the selection rules for their coupling to incoming light. We show that for $N > 2$, one can distinguish between surface excitons that are mostly localized on the outer layers and inner excitons, leading to an asymmetry in the energy separation between split excitonic states. In particular, the bound surface excitons lie lower in energy than their inner counterparts. Additionally, this enables us to show how the layer thickness affects the shape of the absorption spectrum.
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Submitted 2 March, 2018;
originally announced March 2018.
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Excitons in boron nitride single layer
Authors:
Thomas Galvani,
Fulvio Paleari,
Henrique Miranda,
Alejandro Molina-Sánchez,
Ludger Wirtz,
Sylvain Latil,
Hakim Amara,
François Ducastelle
Abstract:
Boron nitride single layer belongs to the family of 2D materials whose optical properties are currently receiving considerable attention. Strong excitonic effects have already been observed in the bulk and still stronger effects are predicted for single layers. We present here a detailed study of these properties by combining \textit{ab initio} calculations and a tight-binding-Wannier analysis in…
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Boron nitride single layer belongs to the family of 2D materials whose optical properties are currently receiving considerable attention. Strong excitonic effects have already been observed in the bulk and still stronger effects are predicted for single layers. We present here a detailed study of these properties by combining \textit{ab initio} calculations and a tight-binding-Wannier analysis in both real and reciprocal space. Due to the simplicity of the band structure with single valence ($π$) and conduction ($π^*$) bands the tight-binding analysis becomes quasi quantitative with only two adjustable parameters and provides tools for a detailed analysis of the exciton properties. Strong deviations from the usual hydrogenic model are evidenced. The ground state exciton is not a genuine Frenkel exciton, but a very localized "tightly-bound" one. The other ones are similar to those found in transition metal dichalcogenides and, although more localized, can be described within a Wannier-Mott scheme.
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Submitted 31 May, 2016;
originally announced May 2016.
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Dispersion in optical fibers and timing for particle identification
Authors:
Fabio Paleari
Abstract:
In the framework of the TOF Wall laser calibration system of the HARP experiment, a study of time dispersion properties of mono-mode and multi-mode optical fibers in the green band (532 nm) has been carried out. Dispersion less than 4 ps/m has been obtained with $\approx$10 $μ$m core diameter fibers.
In the framework of the TOF Wall laser calibration system of the HARP experiment, a study of time dispersion properties of mono-mode and multi-mode optical fibers in the green band (532 nm) has been carried out. Dispersion less than 4 ps/m has been obtained with $\approx$10 $μ$m core diameter fibers.
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Submitted 14 May, 2002;
originally announced May 2002.
