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Inverse Funnel Effect of Excitons in Strained Black Phosphorus
Authors:
Pablo San-Jose,
Vincenzo Parente,
Francisco Guinea,
Rafael Roldán,
Elsa Prada
Abstract:
We study the effects of strain on the properties and dynamics of Wannier excitons in monolayer (phosphorene) and few-layer black phosphorus (BP), a promising two-dimensional material for optoelectronic applications due to its high mobility, mechanical strength and strain-tuneable direct band gap. We compare the results to the case of molybdenum disulphide (MoS$_2$) monolayers. We find that the so-…
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We study the effects of strain on the properties and dynamics of Wannier excitons in monolayer (phosphorene) and few-layer black phosphorus (BP), a promising two-dimensional material for optoelectronic applications due to its high mobility, mechanical strength and strain-tuneable direct band gap. We compare the results to the case of molybdenum disulphide (MoS$_2$) monolayers. We find that the so-called funnel effect, i.e. the possibility of controlling exciton motion by means of inhomogeneous strains, is much stronger in few-layer BP than in MoS$_2$ monolayers and, crucially, is of opposite sign. Instead of excitons accumulating isotropically around regions of high tensile strain like in MoS$_2$, excitons in BP are pushed away from said regions. This \emph{inverse} funnel effect is moreover highly anisotropic, with much larger funnel distances along the armchair crystallographic direction, leading to a directional focusing of exciton flow. A strong inverse funnel effect could enable simpler designs of funnel solar cells, and offer new possibilities for the manipulation and harvesting of light.
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Submitted 28 September, 2016; v1 submitted 5 April, 2016;
originally announced April 2016.
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Strong modulation of optical properties in black phosphorus through strain-engineered rippling
Authors:
Jorge Quereda,
Pablo San-José,
Vincenzo Parente,
Luis Vaquero-Garzon,
Aday Molina-Mendoza,
Nicolás Agraït,
Gabino Rubio-Bollinger,
Francisco Guinea,
Rafael Roldán,
Andres Castellanos-Gomez
Abstract:
Controlling the bandgap through local-strain engineering is an exciting avenue for tailoring optoelectronic materials. Two-dimensional crystals are particularly suited for this purpose because they can withstand unprecedented non-homogeneous deformations before rupture: one can literally bend them and fold them up almost like a piece of paper. Here, we study multi-layer black phosphorus sheets sub…
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Controlling the bandgap through local-strain engineering is an exciting avenue for tailoring optoelectronic materials. Two-dimensional crystals are particularly suited for this purpose because they can withstand unprecedented non-homogeneous deformations before rupture: one can literally bend them and fold them up almost like a piece of paper. Here, we study multi-layer black phosphorus sheets subjected to periodic stress to modulate their optoelectronic properties. We find a remarkable shift of the optical absorption band-edge of up to ~0.7 eV between the regions under tensile and compressive stress, greatly exceeding the strain tunability reported for transition metal dichalcogenides. This observation is supported by theoretical models which also predict that this periodic stress modulation can yield to quantum confinement of carriers at low temperatures. The possibility of generating large strain-induced variations in the local density of charge carriers opens the door for a variety of applications including photovoltaics, quantum optics and two-dimensional optoelectronic devices.
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Submitted 21 April, 2016; v1 submitted 3 September, 2015;
originally announced September 2015.
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Novel effects of strains in graphene and other two dimensional materials
Authors:
B. Amorim,
A. Cortijo,
F. de Juan,
A. G. Grushin,
F. Guinea,
A. Gutiérrez-Rubio,
H. Ochoa,
V. Parente,
R. Roldán,
P. San-José,
J. Schiefele,
M. Sturla,
M. A. H. Vozmediano
Abstract:
The analysis of the electronic properties of strained or lattice deformed graphene combines ideas from classical condensed matter physics, soft matter, and geometrical aspects of quantum field theory (QFT) in curved spaces. Recent theoretical and experimental work shows the influence of strains in many properties of graphene not considered before, such as electronic transport, spin-orbit coupling,…
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The analysis of the electronic properties of strained or lattice deformed graphene combines ideas from classical condensed matter physics, soft matter, and geometrical aspects of quantum field theory (QFT) in curved spaces. Recent theoretical and experimental work shows the influence of strains in many properties of graphene not considered before, such as electronic transport, spin-orbit coupling, the formation of Moiré patterns, optics, ... There is also significant evidence of anharmonic effects, which can modify the structural properties of graphene. These phenomena are not restricted to graphene, and they are being intensively studied in other two dimensional materials, such as the metallic dichalcogenides. We review here recent developments related to the role of strains in the structural and electronic properties of graphene and other two dimensional compounds.
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Submitted 15 March, 2016; v1 submitted 2 March, 2015;
originally announced March 2015.
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Stiffening graphene by controlled defect creation
Authors:
Guillermo López-Polín,
Cristina Gómez-Navarro,
Vincenzo Parente,
Francisco Guinea,
Mikhail I. Katsnelson,
Francesc Pérez-Murano,
Julio Gómez-Herrero
Abstract:
Graphene extraordinary strength, stiffness and lightness have generated great expectations towards its application in flexible electronics and as mechanical reinforcement agent. However, the presence of lattice defects, unavoidable in sheets obtained by scalable routes, might degrade its mechanical properties. Here we report a systematic study on the elastic modulus and strength of graphene with c…
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Graphene extraordinary strength, stiffness and lightness have generated great expectations towards its application in flexible electronics and as mechanical reinforcement agent. However, the presence of lattice defects, unavoidable in sheets obtained by scalable routes, might degrade its mechanical properties. Here we report a systematic study on the elastic modulus and strength of graphene with controlled density of defects. Counter intuitively, the in-plane Young modulus increases with increasing defect density up to almost twice the initial value for vacancy content of ~0.2%, turning it into the stiffest material ever reported. For higher density of vacancies, elastic modulus decreases with defect inclusion. The initial increase in Young modulus is explained in terms of a dependence of the elastic coefficients with the momentum of flexural modes predicted for 2D membranes. In contrast, the fracture strength decreases with defect density according to standard fracture continuum models. These quantitative structure-property relationships, measured in atmospheric conditions, are of fundamental and technological relevance and provide guidance for applications in which graphene mechanics represents a disruptive improvement.
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Submitted 30 October, 2014; v1 submitted 9 June, 2014;
originally announced June 2014.
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Electron-phonon interaction on the surface of a 3D topological insulator
Authors:
Vincenzo Parente,
Arturo Tagliacozzo,
Felix von Oppen,
Francisco Guinea
Abstract:
We analyze the role of a Rayleigh surface phonon mode in the electron-phonon interaction at the surface of a 3D topological insulator. A strong renormalization of the phonon dispersion, leading eventually to the disappearance of Rayleigh phonons, is ruled out in the ideal case of a continuum long-wavelength limit, which is only justified if the surface is clean and defect free. The absence of back…
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We analyze the role of a Rayleigh surface phonon mode in the electron-phonon interaction at the surface of a 3D topological insulator. A strong renormalization of the phonon dispersion, leading eventually to the disappearance of Rayleigh phonons, is ruled out in the ideal case of a continuum long-wavelength limit, which is only justified if the surface is clean and defect free. The absence of backscattering for Dirac electrons at the Fermi surface is partly responsible for the reduced influence of the electron-phonon interaction. A pole in the dielectric response function due to the Rayleigh phonon dispersion could drive the electron-electron interaction attractive at low frequencies. However, the average pairing interaction within the weak coupling approach is found to be too small to induce a surface superconducting instability.
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Submitted 27 May, 2013;
originally announced May 2013.
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A Study on Charged Neutron Star in $AdS_5$
Authors:
Vincenzo Parente,
Raju Roychowdhury
Abstract:
Motivated by an open question raised in recent times regarding the phase transition during the collapse of a neutron star to form a black hole and related stability issues, we have constructed charged neutron stars in $AdS_5$ and show that these stars become unstable at a particular value of their radius, regarded as the Chandrasekhar radius. We reproduced the calculations recently done in [20] in…
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Motivated by an open question raised in recent times regarding the phase transition during the collapse of a neutron star to form a black hole and related stability issues, we have constructed charged neutron stars in $AdS_5$ and show that these stars become unstable at a particular value of their radius, regarded as the Chandrasekhar radius. We reproduced the calculations recently done in [20] in our $AdS_5$ charged star. The analysis shows that the non-Fermi liquid behavior found there in $AdS_4$ is still true in this higher dimensional case with the presence of Kosevich-Lifshitz oscillations.
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Submitted 24 November, 2010;
originally announced November 2010.
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Spin connection and boundary states in a topological insulator
Authors:
V. Parente,
P. Lucignano,
P. Vitale,
A. Tagliacozzo,
F. Guinea
Abstract:
We study the surface resistivity of a three-dimensional topological insulator when the boundaries exhibit a non trivial curvature. We obtain an analytical solution for a spherical topological insulator, and we show that a non trivial quantum spin connection emerges from the three dimensional band structure. We analyze the effect of the spin connection on the scattering by a bump on a flat surface.…
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We study the surface resistivity of a three-dimensional topological insulator when the boundaries exhibit a non trivial curvature. We obtain an analytical solution for a spherical topological insulator, and we show that a non trivial quantum spin connection emerges from the three dimensional band structure. We analyze the effect of the spin connection on the scattering by a bump on a flat surface. Quantum effects induced by the geometry lead to resonances when the electron wavelength is comparable to the size of the bump.
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Submitted 2 November, 2010;
originally announced November 2010.
