Showing 1–3 of 3 results for author: Paszuk, A

Photoemission study and band alignment of GaN passivation layers on GaInP heterointerface

Authors: S. Shekarabi, M. A. Zare Pour, H. Su, W. Zhang, C. He, O. Romanyuk, A. Paszuk, S. Hu, T. Hannappel

Abstract: III-V semiconductor-based photoelectrochemical (PEC) devices show the highest solar-to-electricity or solar-to-fuel conversion efficiencies. GaInP is a relevant top photoabsorber layer or a charge-selective contact in PEC for integrated and direct solar fuel production, due to its tunable lattice constant, electronic band structure, and favorable optical properties. To enhance the stability of its… ▽ More III-V semiconductor-based photoelectrochemical (PEC) devices show the highest solar-to-electricity or solar-to-fuel conversion efficiencies. GaInP is a relevant top photoabsorber layer or a charge-selective contact in PEC for integrated and direct solar fuel production, due to its tunable lattice constant, electronic band structure, and favorable optical properties. To enhance the stability of its surface against chemical corrosion which leads to decomposition, we deposit a GaN protection and passivation layer. The n-doped GaInP(100) epitaxial layers were grown by metalorganic chemical vapor deposition on top of GaAs(100) substrate. Subsequently, thin 1-20 nm GaN films were grown on top of the oxidized GaInP surfaces by atomic layer deposition. We studied the band alignment of these multi-junction heterostructures by X-ray and ultraviolet photoelectron spectroscopy. Due to the limited emission depth of photoelectrons, we determined the band alignment by a series of separate measurements in which we either modified the GaInP(100) surface termination or the film thickness of the grown GaN on GaInP(100) buffer layers. On n-GaInP(100) surfaces prepared with the well-known phosphorus-rich (2x2)/c(4x2) reconstruction we found up-ward surface band bending (BB) of 0.34 eV, and Fermi level pinning due to the present surface states. Upon oxidation, the surface states are partially passivated resulting in a reduction of BB to 0.12 eV and a valence band offset (VBO) between GaInP and oxide bands of 2.0 eV. Between the GaInP(100) buffer layer and the GaN passivation layer, we identified a VBO of 1.8 eV. The corresponding conduction band offset of -0.2 eV is found to be rather small. Therefore, we evaluate the application of the GaN passivation layer as a promising technological step not only to reduce surface states but also to increase the stability of the surfaces of photoelectrochemical devices. △ Less

Submitted 23 October, 2023; originally announced October 2023.

Band energy diagrams of n-GaInP/n-AlInP(100) surfaces and heterointerfaces studied by X-ray photoelectron spectroscopy

Authors: Mohammad Amin Zare Pour, Oleksandr Romanyuk, Dominik C. Moritz, Agnieszka Paszuk, Clement Maheu, Sahar Shekarabi, Kai Daniel Hanke, David Ostheimer, Thomas Mayer, Jan P. Hofmann, Wolfram Jaegermann, Thomas Hannappel

Abstract: Lattice matched n-type AlInP(100) charge selective contacts are commonly grown on n-p GaInP(100) top absorbers in high-efficiency III-V multijunction solar or photoelectrochemical cells. The cell performance can be greatly limited by the electron selectivity and valance band offset at this heterointerface. Understanding of the atomic and electronic properties of the GaInP/AlInP heterointerface is… ▽ More Lattice matched n-type AlInP(100) charge selective contacts are commonly grown on n-p GaInP(100) top absorbers in high-efficiency III-V multijunction solar or photoelectrochemical cells. The cell performance can be greatly limited by the electron selectivity and valance band offset at this heterointerface. Understanding of the atomic and electronic properties of the GaInP/AlInP heterointerface is crucial for the reduction of photocurrent losses in III-V multijunction devices. In our paper, we investigated chemical composition and electronic properties of n-GaInP/n-AlInP heterostructures by X-ray photoelectron spectroscopy (XPS). To mimic an in-situ interface experiment with in-situ stepwise deposition of the contact material, 1 nm - 50 nm thick n-AlInP(100) epitaxial layers were grown on n-GaInP(100) buffer layer on n-GaAs(100) substrates by metal organic vapor phase epitaxy. We observed (2x2)/c(4x2) low-energy electron diffraction patterns with characteristic diffuse streaks along the [01-1] direction due to P-P dimers on both AlInP(100) and GaInP(100) as-prepared surfaces. Atomic composition analysis confirmed P-rich termination on both surfaces. Angle-resolved XPS measurements revealed a surface core level shift of 0.9 eV in P 2p peaks and the absence of interface core level shifts. We assigned the surface chemical shift in the P2p spectrum to P-P bonds on a surface. We found an upward surface band bending on the (2x2)/c(4x2) surfaces most probably caused by localized mid-gap electronic states. Pinning of the Fermi level by localized electronic states remained in n-GaInP/n-AlInP heterostructures. A valence band offset of 0.2 eV was derived by XPS and band alignment diagram models for the n-n junctions were suggested. △ Less

Submitted 18 July, 2022; originally announced July 2022.

Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(100) interfaces: Interfacial chemical states and complete band energy diagrams

Authors: O. Romanyuk, A. Paszuk, I. Gordeev, R. G. Wilks, S. Ueda, C. Hartmann, R. Félix, M. Bär, C. Schlueter, A. Gloskovskii, I. Bartoš, M. Nandy, J. Houdková, P. Jiříček, W. Jaegermann, J. P. Hofmann, T. Hannappel

Abstract: The epitaxial growth of the polar GaP(100) on the nonpolar Si(100) substrate suffers from inevitable defects at the antiphase domain boundaries, resulting from mono-atomic steps on the Si(100) surface. Stabilization of Si(100) substrate surfaces with arsenic is a promising technological step enabling the preparation of Si substrates with double atomic steps and reduced density of the APDs. In this… ▽ More The epitaxial growth of the polar GaP(100) on the nonpolar Si(100) substrate suffers from inevitable defects at the antiphase domain boundaries, resulting from mono-atomic steps on the Si(100) surface. Stabilization of Si(100) substrate surfaces with arsenic is a promising technological step enabling the preparation of Si substrates with double atomic steps and reduced density of the APDs. In this paper, 4-50 nm thick GaP epitaxial films were grown on As-terminated Si(100) substrates with different types of doping, miscuts, and As-surface termination by metalorganic vapor phase epitaxy. The GaP(As)/Si(100) heterostructures were investigated by X-ray photoelectron spectroscopy (XPS) combined with gas cluster ion beam (GCIB) sputtering and by hard X-ray photoelectron spectroscopy (HAXPES). We found residuals of arsenic atoms in the GaP lattice (0.2-0.3 at.%) and a localization of As atoms at the GaP(As)/Si(100) interface (1 at.%). Deconvolution of core level peaks revealed interface core level shifts. In As core levels, chemical shifts between 0.5-0.8 eV were measured and identified by angle-resolved XPS measurements. Similar valence band offset (VBO) values of 0.6 eV were obtained, regardless of the doping type of Si substrate, Si substrate miscut or type of As-terminated Si substrate surface. The band alignment diagram of the heterostructure was deduced. △ Less

Submitted 17 June, 2022; originally announced June 2022.