Showing 1–9 of 9 results for author: Pedramrazi, Z

High-Coherence Kerr-cat qubit in 2D architecture

Authors: Ahmed Hajr, Bingcheng Qing, Ke Wang, Gerwin Koolstra, Zahra Pedramrazi, Ziqi Kang, Larry Chen, Long B. Nguyen, Christian Junger, Noah Goss, Irwin Huang, Bibek Bhandari, Nicholas E. Frattini, Shruti Puri, Justin Dressel, Andrew N. Jordan, David Santiago, Irfan Siddiqi

Abstract: The Kerr-cat qubit is a bosonic qubit in which multi-photon Schrodinger cat states are stabilized by applying a two-photon drive to an oscillator with a Kerr nonlinearity. The suppressed bit-flip rate with increasing cat size makes this qubit a promising candidate to implement quantum error correction codes tailored for noise-biased qubits. However, achieving strong light-matter interactions neces… ▽ More The Kerr-cat qubit is a bosonic qubit in which multi-photon Schrodinger cat states are stabilized by applying a two-photon drive to an oscillator with a Kerr nonlinearity. The suppressed bit-flip rate with increasing cat size makes this qubit a promising candidate to implement quantum error correction codes tailored for noise-biased qubits. However, achieving strong light-matter interactions necessary for stabilizing and controlling this qubit has traditionally required strong microwave drives that heat the qubit and degrade its performance. In contrast, increasing the coupling to the drive port removes the need for strong drives at the expense of large Purcell decay. By integrating an effective band-block filter on-chip, we overcome this trade-off and realize a Kerr-cat qubit in a scalable 2D superconducting circuit with high coherence. This filter provides 30 dBでしべる of isolation at the qubit frequency with negligible attenuation at the frequencies required for stabilization and readout. We experimentally demonstrate quantum non-demolition readout fidelity of 99.6% for a cat with 8 photons. Also, to have high-fidelity universal control over this qubit, we combine fast Rabi oscillations with a new demonstration of the X(90) gate through phase modulation of the stabilization drive. Finally, the lifetime in this architecture is examined as a function of the cat size of up to 10 photons in the oscillator achieving a bit-flip time higher than 1 ms and only a linear decrease in the phase-flip time, in good agreement with the theoretical analysis of the circuit. Our qubit shows promise as a building block for fault-tolerant quantum processors with a small footprint. △ Less

Submitted 19 May, 2024; v1 submitted 25 April, 2024; originally announced April 2024.

Broadband CPW-based impedance-transformed Josephson parametric amplifier

Authors: Bingcheng Qing, Long B. Nguyen, Xinyu Liu, Hengjiang Ren, William P. Livingston, Noah Goss, Ahmed Hajr, Trevor Chistolini, Zahra Pedramrazi, David I. Santiago, Jie Luo, Irfan Siddiqi

Abstract: Quantum-limited Josephson parametric amplifiers play a pivotal role in advancing the field of circuit quantum electrodynamics by enabling the fast and high-fidelity measurement of weak microwave signals. Therefore, it is necessary to develop robust parametric amplifiers with low noise, broad bandwidth, and reduced design complexity for microwave detection. However, current broadband parametric amp… ▽ More Quantum-limited Josephson parametric amplifiers play a pivotal role in advancing the field of circuit quantum electrodynamics by enabling the fast and high-fidelity measurement of weak microwave signals. Therefore, it is necessary to develop robust parametric amplifiers with low noise, broad bandwidth, and reduced design complexity for microwave detection. However, current broadband parametric amplifiers either have degraded noise performance or rely on complex designs. Here, we present a device based on the broadband impedance-transformed Josephson parametric amplifier (IMPA) that integrates a horn-like coplanar waveguide (CPW) transmission line, which significantly decreases the design and fabrication complexity, while keeping comparable performance. The device shows an instantaneous bandwidth of 700(200) MHz for 15(20) dB gain with an average saturation power of -110 dBでしべるm and near quantum-limited added noise. The operating frequency can be tuned over 1.4 GHz using an external flux bias. We further demonstrate the negligible back-action from our device on a transmon qubit. The amplification performance and simplicity of our device promise its wide adaptation in quantum metrology, quantum communication, and quantum information processing. △ Less

Submitted 25 October, 2023; originally announced October 2023.

Comments: 11 pages, 8 figures

Scalable High-Performance Fluxonium Quantum Processor

Authors: Long B. Nguyen, Gerwin Koolstra, Yosep Kim, Alexis Morvan, Trevor Chistolini, Shraddha Singh, Konstantin N. Nesterov, Christian Jünger, Larry Chen, Zahra Pedramrazi, Bradley K. Mitchell, John Mark Kreikebaum, Shruti Puri, David I. Santiago, Irfan Siddiqi

Abstract: The technological development of hardware heading toward universal fault-tolerant quantum computation requires a large-scale processing unit with high performance. While fluxonium qubits are promising with high coherence and large anharmonicity, their scalability has not been systematically explored. In this work, we propose a superconducting quantum information processor based on compact high-coh… ▽ More The technological development of hardware heading toward universal fault-tolerant quantum computation requires a large-scale processing unit with high performance. While fluxonium qubits are promising with high coherence and large anharmonicity, their scalability has not been systematically explored. In this work, we propose a superconducting quantum information processor based on compact high-coherence fluxoniums with suppressed crosstalk, reduced design complexity, improved operational efficiency, high-fidelity gates, and resistance to parameter fluctuations. In this architecture, the qubits are readout dispersively using individual resonators connected to a common bus and manipulated via combined on-chip RF and DC control lines, both of which can be designed to have low crosstalk. A multi-path coupling approach enables exchange interactions between the high-coherence computational states and at the same time suppresses the spurious static ZZ rate, leading to fast and high-fidelity entangling gates. We numerically investigate the cross resonance controlled-NOT and the differential AC-Stark controlled-Z operations, revealing low gate error for qubit-qubit detuning bandwidth of up to 1 GHz. Our study on frequency crowding indicates high fabrication yield for quantum processors consisting of over thousands of qubits. In addition, we estimate low resource overhead to suppress logical error rate using the XZZX surface code. These results promise a scalable quantum architecture with high performance for the pursuit of universal quantum computation. △ Less

Submitted 5 February, 2022; v1 submitted 23 January, 2022; originally announced January 2022.

Comments: 29 pages, 15 figures

Journal ref: PRX Quantum 3, 037001 (2022)

Non-Covalent Dimerization after Enediyne Cyclization on Au(111)

Authors: Dimas G. de Oteyza, Alejandro Pérez Paz, Yen-Chia Chen, Zahra Pedramrazi, Alexander Riss, Sebastian Wickenburg, Hsin-Zon Tsai, Felix R. Fischer, Michael F. Crommie, Angel Rubio

Abstract: We investigate the thermally-induced cyclization of 1,2 - bis(2 - phenylethynyl)benzene on Au(111) using scanning tunneling microscopy and computer simulations. Cyclization of sterically hindered enediynes is known to proceed via two competing mechanisms in solution: a classic C1 - C6 or a C1 - C5 cyclization pathway. On Au(111) we find that the C1 - C5 cyclization is suppressed and that the C1 -… ▽ More We investigate the thermally-induced cyclization of 1,2 - bis(2 - phenylethynyl)benzene on Au(111) using scanning tunneling microscopy and computer simulations. Cyclization of sterically hindered enediynes is known to proceed via two competing mechanisms in solution: a classic C1 - C6 or a C1 - C5 cyclization pathway. On Au(111) we find that the C1 - C5 cyclization is suppressed and that the C1 - C6 cyclization yields a highly strained bicyclic olefin whose surface chemistry was hitherto unknown. The C1 - C6 product self-assembles into discrete non-covalently bound dimers on the surface. The reaction mechanism and driving forces behind non-covalent association are discussed in light of density functional theory calculations. △ Less

Submitted 1 December, 2020; originally announced December 2020.

Journal ref: J. Am. Chem. Soc. 2016, 138, 10963-10967

Observation of Topologically Protected States at Crystalline Phase Boundaries in Single-layer WSe2

Authors: Miguel M. Ugeda, Artem Pulkin, Shujie Tang, Hyejin Ryu, Quansheng Wu, Yi Zhang, Dillon Wong, Zahra Pedramrazi, Ana Martín-Recio, Yi Chen, Feng Wang, Zhi-Xun Shen, Sung-Kwan Mo, Oleg V. Yazyev, Michael F. Crommie

Abstract: Transition metal dichalcogenide (TMD) materials are unique in the wide variety of structural and electronic phases they exhibit in the two-dimensional (2D) single-layer limit. Here we show how such polymorphic flexibility can be used to achieve topological states at highly ordered phase boundaries in a new quantum spin Hall insulator (QSHI), 1T'-WSe2. We observe helical states at the crystallograp… ▽ More Transition metal dichalcogenide (TMD) materials are unique in the wide variety of structural and electronic phases they exhibit in the two-dimensional (2D) single-layer limit. Here we show how such polymorphic flexibility can be used to achieve topological states at highly ordered phase boundaries in a new quantum spin Hall insulator (QSHI), 1T'-WSe2. We observe helical states at the crystallographically-aligned interface between quantum a spin Hall insulating domain of 1T'-WSe2 and a semiconducting domain of 1H-WSe2 in contiguous single layers grown using molecular beam epitaxy (MBE). The QSHI nature of single-layer 1T'-WSe2 was verified using ARPES to determine band inversion around a 120 meV energy gap, as well as STM spectroscopy to directly image helical edge-state formation. Using this new edge-state geometry we are able to directly confirm the predicted penetration depth of a helical interface state into the 2D bulk of a QSHI for a well-specified crystallographic direction. The clean, well-ordered topological/trivial interfaces observed here create new opportunities for testing predictions of the microscopic behavior of topologically protected boundary states without the complication of structural disorder. △ Less

Submitted 7 November, 2018; v1 submitted 5 February, 2018; originally announced February 2018.

Comments: https://www.nature.com/articles/s41467-018-05672-w

Journal ref: Nature Communications 9, 3401 (2018)

Realization of Quantum Spin Hall State in Monolayer 1T'-WTe2

Authors: Shujie Tang, Chaofan Zhang, Dillon Wong, Zahra Pedramrazi, Hsin-Zon Tsai, Chunjing Jia, Brian Moritz, Martin Claassen, Hyejin Ryu, Salman Kahn, Juan Jiang, Hao Yan, Makoto Hashimoto, Donghui Lu, Robert G. Moore, Chancuk Hwang, Choongyu Hwang, Zahid Hussain, Yulin Chen, Miguel M. Ugeda, Zhi Liu, Xiaoming Xie, Thomas P. Devereaux, Michael F. Crommie, Sung-Kwan Mo , et al. (1 additional authors not shown)

Abstract: A quantum spin Hall (QSH) insulator is a novel two-dimensional quantum state of matter that features quantized Hall conductance in the absence of magnetic field, resulting from topologically protected dissipationless edge states that bridge the energy gap opened by band inversion and strong spin-orbit coupling. By investigating electronic structure of epitaxially grown monolayer 1T'-WTe2 using ang… ▽ More A quantum spin Hall (QSH) insulator is a novel two-dimensional quantum state of matter that features quantized Hall conductance in the absence of magnetic field, resulting from topologically protected dissipationless edge states that bridge the energy gap opened by band inversion and strong spin-orbit coupling. By investigating electronic structure of epitaxially grown monolayer 1T'-WTe2 using angle-resolved photoemission (ARPES) and first principle calculations, we observe clear signatures of the topological band inversion and the band gap opening, which are the hallmarks of a QSH state. Scanning tunneling microscopy measurements further confirm the correct crystal structure and the existence of a bulk band gap, and provide evidence for a modified electronic structure near the edge that is consistent with the expectations for a QSH insulator. Our results establish monolayer 1T'-WTe2 as a new class of QSH insulator with large band gap in a robust two-dimensional materials family of transition metal dichalcogenides (TMDCs). △ Less

Submitted 9 March, 2017; originally announced March 2017.

Comments: 19 pages, 4 figures; includes Supplemental Material (11 pages, 7 figures)

Short-Channel Field Effect Transistors with 9-Atom and 13-Atom wide Graphene Nanoribbons

Authors: Juan Pablo Llinas, Andrew Fairbrother, Gabriela Borin Barin, Wu Shi, Kyunghoon Lee, Shuang Wu, Byung Yong Choi, Rohit Braganza, Jordan Lear, Nicholas Kau, Wonwoo Choi, Chen Chen, Zahra Pedramrazi, Tim Dumslaff, Akimitsu Narita, Xinliang Feng, Klaus Müllen, Felix Fischer, Alex Zettl, Pascal Ruffieux, Eli Yablonovitch, Michael Crommie, Roman Fasel, Jeffrey Bokor

Abstract: Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap of these GNRs have prevented the fabrication of devices with the desired performance and switching behaviour. Here, by fabricating short channel (Lch ~20 nm) dev… ▽ More Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap of these GNRs have prevented the fabrication of devices with the desired performance and switching behaviour. Here, by fabricating short channel (Lch ~20 nm) devices with a thin, high-k gate dielectric and a 9-atom wide (0.95 nm) armchair GNR as the channel material, we demonstrate FETs with high on-current (Ion >1 uA at Vd = -1 V) and high Ion/Ioff ~10^5 at room temperature. We find that the performance of these devices is limited by tunnelling through the Schottky barrier (SB) at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high performance short-channel FETs with bottom-up synthesized armchair GNRs. △ Less

Submitted 27 January, 2017; v1 submitted 21 May, 2016; originally announced May 2016.

Comments: v3: added local back gate data

Journal ref: Nature Communications 8, Article number: 633 (2017)

Bottom-up Graphene Nanoribbon Field-Effect Transistors

Authors: Patrick B. Bennett, Zahra Pedramrazi, Ali Madani, Yen-Chia Chen, Dimas G. de Oteyza, Chen Chen, Felix R. Fischer, Michael F. Crommie, Jeffrey Bokor

Abstract: Recently developed processes have enabled bottom-up chemical synthesis of graphene nanoribbons (GNRs) with precise atomic structure. These GNRs are ideal candidates for electronic devices because of their uniformity, extremely narrow width below 1 nm, atomically perfect edge structure, and desirable electronic properties. Here, we demonstrate nanoscale chemically synthesized GNR field-effect trans… ▽ More Recently developed processes have enabled bottom-up chemical synthesis of graphene nanoribbons (GNRs) with precise atomic structure. These GNRs are ideal candidates for electronic devices because of their uniformity, extremely narrow width below 1 nm, atomically perfect edge structure, and desirable electronic properties. Here, we demonstrate nanoscale chemically synthesized GNR field-effect transistors, made possible by development of a new layer transfer process. We observe strong environmental sensitivity and unique transport behavior characteristic of sub-1nm width GNRs. △ Less

Submitted 1 October, 2013; originally announced October 2013.

Experimentally Engineering the Edge Termination of Graphene Nanoribbons

Authors: Xiaowei Zhang, Oleg V. Yazyev, Juanjuan Feng, Liming Xie, Chenggang Tao, Yen-Chia Chen, Liying Jiao, Zahra Pedramrazi, Alex Zettl, Steven G. Louie, Hongjie Dai, Michael F. Crommie

Abstract: The edges of graphene nanoribbons (GNRs) have attracted much interest due to their potentially strong influence on GNR electronic and magnetic properties. Here we report the ability to engineer the microscopic edge termination of high quality GNRs via hydrogen plasma etching. Using a combination of high-resolution scanning tunneling microscopy and first-principles calculations, we have determined… ▽ More The edges of graphene nanoribbons (GNRs) have attracted much interest due to their potentially strong influence on GNR electronic and magnetic properties. Here we report the ability to engineer the microscopic edge termination of high quality GNRs via hydrogen plasma etching. Using a combination of high-resolution scanning tunneling microscopy and first-principles calculations, we have determined the exact atomic structure of plasma-etched GNR edges and established the chemical nature of terminating functional groups for zigzag, armchair and chiral edge orientations. We find that the edges of hydrogen-plasma-etched GNRs are generally flat, free of structural reconstructions and are terminated by hydrogen atoms with no rehybridization of the outermost carbon edge atoms. Both zigzag and chiral edges show the presence of edge states. △ Less

Submitted 29 January, 2013; v1 submitted 15 May, 2012; originally announced May 2012.

Comments: 16+9 pages, 3+4 figures

Journal ref: ACS Nano 7, 198-202 (2013)