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Parafermions in Moiré Minibands
Authors:
Hui Liu,
Raul Perea-Causin,
Emil J. Bergholtz
Abstract:
Moiré materials provide a remarkably tunable platform for topological and strongly correlated quantum phases of matter. Very recently, the first zero field Abelian fractional Chern insulators (FCIs) have been experimentally demonstrated and it has been theoretically predicted that non-Abelian states with Majorana fermion excitations may be realized in the nearly dispersionless minibands of these s…
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Moiré materials provide a remarkably tunable platform for topological and strongly correlated quantum phases of matter. Very recently, the first zero field Abelian fractional Chern insulators (FCIs) have been experimentally demonstrated and it has been theoretically predicted that non-Abelian states with Majorana fermion excitations may be realized in the nearly dispersionless minibands of these systems. Here we provide telltale evidence in terms of low-energy quantum numbers, spectral flow and entanglement spectra for the even more exotic possibility of moiré-based non-Abelian FCIs exhibiting Fibonacci parafermion excitations.
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Submitted 12 June, 2024;
originally announced June 2024.
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Electrically tunable layer-hybridized trions in doped WSe$_2$ bilayers
Authors:
Raul Perea-Causin,
Samuel Brem,
Fabian Buchner,
Kenji Watanabe,
Takashi Taniguchi,
John M. Lupton,
Kai-Qiang Lin,
Ermin Malic
Abstract:
Doped van der Waals heterostructures host layer-hybridized trions, i.e. charged excitons with layer-delocalized constituents holding promise for highly controllable optoelectronics. Combining a microscopic theory with photoluminescence (PL) experiments, we demonstrate the electrical tunability of the trion energy landscape in naturally stacked WSe$_2$ bilayers. We show that an out-of-plane electri…
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Doped van der Waals heterostructures host layer-hybridized trions, i.e. charged excitons with layer-delocalized constituents holding promise for highly controllable optoelectronics. Combining a microscopic theory with photoluminescence (PL) experiments, we demonstrate the electrical tunability of the trion energy landscape in naturally stacked WSe$_2$ bilayers. We show that an out-of-plane electric field modifies the energetic ordering of the lowest lying trion states, which consist of layer-hybridized $Λ$-point electrons and layer-localized K-point holes. At small fields, intralayer-like trions yield distinct PL signatures in opposite doping regimes characterized by weak Stark shifts in both cases. Above a doping-asymmetric critical field, interlayer-like species are energetically favored and produce PL peaks with a pronounced Stark red-shift and a counter-intuitively large intensity arising from efficient phonon-assisted recombination. Our work presents an important step forward in the microscopic understanding of layer-hybridized trions in van der Waals heterostructures and paves the way towards optoelectronic applications based on electrically controllable atomically-thin semiconductors.
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Submitted 29 April, 2024;
originally announced April 2024.
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Phonon-bottleneck enhanced exciton emission in 2D perovskites
Authors:
Joshua J. P. Thompson,
Mateusz Dyksik,
Paulina Peksa,
Katarzyna Posmyk,
Ambjörn Joki,
Raul Perea-Causin,
Paul Erhart,
Michał Baranowski,
Maria Antonietta Loi,
Paulina Plochocka,
Ermin Malic
Abstract:
Layered halide perovskites exhibit remarkable optoelectronic properties and technological promise, driven by strongly bound excitons. The interplay of spin-orbit and exchange coupling creates a rich excitonic landscape, determining their optical signatures and exciton dynamics. Despite the dark excitonic ground state, surprisingly efficient emission from higher-energy bright states has puzzled the…
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Layered halide perovskites exhibit remarkable optoelectronic properties and technological promise, driven by strongly bound excitons. The interplay of spin-orbit and exchange coupling creates a rich excitonic landscape, determining their optical signatures and exciton dynamics. Despite the dark excitonic ground state, surprisingly efficient emission from higher-energy bright states has puzzled the scientific community, sparking debates on relaxation mechanisms. Combining low-temperature magneto-optical measurements with sophisticated many-particle theory, we elucidate the origin of the bright exciton emission in perovskites by tracking the thermalization of dark and bright excitons under a magnetic field. We clearly attribute the unexpectedly high emission to a pronounced phonon-bottleneck effect, considerably slowing down the relaxation towards the energetically lowest dark states. We demonstrate that this bottleneck can be tuned by manipulating the bright-dark energy splitting and optical phonon energies, offering valuable insights and strategies for controlling exciton emission in layered perovskite materials that is crucial for optoelectronics applications.
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Submitted 17 December, 2023;
originally announced December 2023.
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Trion photoluminescence and trion stability in atomically thin semiconductors
Authors:
Raul Perea-Causin,
Samuel Brem,
Ole Schmidt,
Ermin Malic
Abstract:
The optical response of doped monolayer semiconductors is governed by trions, i.e. photoexcited electron-hole pairs bound to doping charges. While their photoluminescence (PL) signatures have been identified in experiments, a microscopic model consistently capturing bright and dark trion peaks is still lacking. In this work, we derive a generalized trion PL formula on a quantum-mechanical footing,…
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The optical response of doped monolayer semiconductors is governed by trions, i.e. photoexcited electron-hole pairs bound to doping charges. While their photoluminescence (PL) signatures have been identified in experiments, a microscopic model consistently capturing bright and dark trion peaks is still lacking. In this work, we derive a generalized trion PL formula on a quantum-mechanical footing, considering direct and phonon-assisted recombination mechanisms. We show the trion energy landscape in WSe$_2$ by solving the trion Schrödinger equation. We reveal that the mass imbalance between equal charges results in less stable trions exhibiting a small binding energy and, interestingly, a large energetic offset from exciton peaks in PL spectra. Furthermore, we compute the temperature-dependent PL spectra for n- and p-doped monolayers and predict yet unobserved signatures originating from trions with an electron at the $Λ$ point. Our work presents an important step towards a microscopic understanding of the internal structure of trions determining their stability and optical fingerprint.
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Submitted 19 June, 2023;
originally announced June 2023.
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Electrically tunable dipolar interactions between layer-hybridized excitons
Authors:
Daniel Erkensten,
Samuel Brem,
Raul Perea-Causin,
Joakim Hagel,
Fedele Tagarelli,
Edoardo Lopriore,
Andras Kis,
Ermin Malic
Abstract:
Transition-metal dichalcogenide bilayers exhibit a rich exciton landscape including layer-hybridized excitons, i.e. excitons which are of partly intra- and interlayer nature. In this work, we study hybrid exciton-exciton interactions in naturally stacked WSe$_2$ homobilayers. In these materials, the exciton landscape is electrically tunable such that the low-energy states can be rendered more or l…
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Transition-metal dichalcogenide bilayers exhibit a rich exciton landscape including layer-hybridized excitons, i.e. excitons which are of partly intra- and interlayer nature. In this work, we study hybrid exciton-exciton interactions in naturally stacked WSe$_2$ homobilayers. In these materials, the exciton landscape is electrically tunable such that the low-energy states can be rendered more or less interlayer-like depending on the strength of the external electric field. Based on a microscopic and material-specific many-particle theory, we reveal two intriguing interaction regimes: a low-dipole regime at small electric fields and a high-dipole regime at larger fields, involving interactions between hybrid excitons with a substantially different intra- and interlayer composition in the two regimes. While the low-dipole regime is characterized by weak inter-excitonic interactions between intralayer-like excitons, the high-dipole regime involves mostly interlayer-like excitons which display a strong dipole-dipole repulsion and give rise to large spectral blue-shifts and a highly anomalous diffusion. Overall, our microscopic study sheds light on the remarkable electrical tunability of hybrid exciton-exciton interactions in atomically thin semiconductors and can guide future experimental studies in this growing field of research.
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Submitted 2 May, 2023;
originally announced May 2023.
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Electrical control of hybrid exciton transport in a van der Waals heterostructure
Authors:
Fedele Tagarelli,
Edoardo Lopriore,
Daniel Erkensten,
Raül Perea-Causín,
Samuel Brem,
Joakim Hagel,
Zhe Sun,
Gabriele Pasquale,
Kenji Watanabe,
Takashi Taniguchi,
Ermin Malic,
Andras Kis
Abstract:
Interactions between out-of-plane dipoles in bosonic gases enable the long-range propagation of excitons. The lack of direct control over collective dipolar properties has hitherto limited the degrees of tunability and the microscopic understanding of exciton transport. In this work, we modulate the layer hybridization and interplay between many-body interactions of excitons in a van der Waals het…
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Interactions between out-of-plane dipoles in bosonic gases enable the long-range propagation of excitons. The lack of direct control over collective dipolar properties has hitherto limited the degrees of tunability and the microscopic understanding of exciton transport. In this work, we modulate the layer hybridization and interplay between many-body interactions of excitons in a van der Waals heterostructure with an applied vertical electric field. By performing spatiotemporally resolved measurements supported by microscopic theory, we uncover the dipole-dependent properties and transport of excitons with different degrees of hybridization. Moreover, we find constant emission quantum yields of the transporting species as a function of excitation power with dominating radiative decay mechanisms over nonradiative ones, a fundamental requirement for efficient excitonic devices. Our findings provide a complete picture of the many-body effects in the transport of dilute exciton gases and have crucial implications for the study of emerging states of matter, such as Bose-Einstein condensation, as well as for optoelectronic applications based on exciton propagation.
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Submitted 1 March, 2023;
originally announced March 2023.
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Exciton optics, dynamics and transport in atomically thin semiconductors
Authors:
Raul Perea-Causin,
Daniel Erkensten,
Jamie M. Fitzgerald,
Joshua J. P. Thompson,
Roberto Rosati,
Samuel Brem,
Ermin Malic
Abstract:
Atomically thin semiconductors such as transition metal dichalcogenide (TMD) monolayers exhibit a very strong Coulomb interaction, giving rise to a rich exciton landscape. This makes these materials highly attractive for efficient and tunable optoelectronic devices. In this article, we review the recent progress in the understanding of exciton optics, dynamics and transport, which crucially govern…
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Atomically thin semiconductors such as transition metal dichalcogenide (TMD) monolayers exhibit a very strong Coulomb interaction, giving rise to a rich exciton landscape. This makes these materials highly attractive for efficient and tunable optoelectronic devices. In this article, we review the recent progress in the understanding of exciton optics, dynamics and transport, which crucially govern the operation of TMD-based devices. We highlight the impact of hBN-encapsulation, which reveals a plethora of many-particle states in optical spectra, and we outline the most novel breakthroughs in the field of exciton-polaritonics. Moreover, we underline the direct observation of exciton formation and thermalization in TMD monolayers and heterostructures in recent time-resolved ARPES studies. We also show the impact of exciton density, strain and dielectric environment on exciton diffusion and funneling. Finally, we put forward relevant research directions in the field of atomically thin semiconductors for the near future.
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Submitted 20 September, 2022;
originally announced September 2022.
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Flat-band-induced many-body interactions and exciton complexes in a layered semiconductor
Authors:
Gabriele Pasquale,
Zhe Sun,
Kristians Cernevics,
Raul Perea-Causin,
Fedele Tagarelli,
Kenji Watanabe,
Takashi Taniguchi,
Ermin Malic,
Oleg V. Yazyev,
Andras Kis
Abstract:
Interactions among a collection of particles generate many-body effects in solids resulting in striking modifications of material properties. The heavy carrier mass that yields strong interactions and gate control of carrier density over a wide range, make two-dimensional semiconductors an exciting playground to explore many-body physics. The family of III-VI metal monochalcogenides emerges as a n…
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Interactions among a collection of particles generate many-body effects in solids resulting in striking modifications of material properties. The heavy carrier mass that yields strong interactions and gate control of carrier density over a wide range, make two-dimensional semiconductors an exciting playground to explore many-body physics. The family of III-VI metal monochalcogenides emerges as a new platform for this purpose due to its excellent optical properties and the flat valence band dispersion with a Mexican-hat-like inversion. In this work, we present a complete study of charge-tunable excitons in few-layer InSe by photoluminescence spectroscopy. From the optical spectra, we establish that free excitons in InSe are more likely to be captured by ionized donors due to the large exciton Bohr radius, leading to the formation of bound exciton complexes. Surprisingly, a pronounced redshift of the exciton energy accompanied by a decrease of the exciton binding energy upon hole-doping reveals a significant band gap renormalization and dynamical screening induced by the presence of the Fermi reservoir. Our findings establish InSe as a reproducible and potentially manufacturable platform to explore electron correlation phenomena without the need for twist-angle engineering.
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Submitted 27 July, 2022;
originally announced July 2022.
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Microscopic origin of anomalous interlayer exciton transport in van der Waals heterostructures
Authors:
Daniel Erkensten,
Samuel Brem,
Raül Perea-Causin,
Ermin Malic
Abstract:
Van der Waals heterostructures constitute a platform for investigating intriguing many-body quantum phenomena. In particular, transition-metal dichalcogenide (TMD) hetero-bilayers host long-lived interlayer excitons which exhibit permanent out-of-plane dipole moments. Here, we develop a microscopic theory for interlayer exciton-exciton interactions including both the dipolar nature of interlayer e…
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Van der Waals heterostructures constitute a platform for investigating intriguing many-body quantum phenomena. In particular, transition-metal dichalcogenide (TMD) hetero-bilayers host long-lived interlayer excitons which exhibit permanent out-of-plane dipole moments. Here, we develop a microscopic theory for interlayer exciton-exciton interactions including both the dipolar nature of interlayer excitons as well as their fermionic substructure, which gives rise to an attractive fermionic exchange. We find that these interactions contribute to a drift force resulting in highly non-linear exciton propagation at elevated densities in the MoSe$_2$-WSe$_2$ heterostructure. We show that the propagation can be tuned by changing the number of hBN spacers between the TMD layers or by adjusting the dielectric environment. In particular, although counter-intuitive, we reveal that interlayer excitons in free-standing samples propagate slower than excitons in hBN-encapsulated TMDs - due to an enhancement of the net Coulomb-drift with stronger environmental screening. Overall, our work contributes to a better microscopic understanding of the interlayer exciton transport in technologically promising atomically thin semiconductors.
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Submitted 8 July, 2022;
originally announced July 2022.
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Trion-phonon interaction in atomically thin semiconductors
Authors:
Raul Perea-Causin,
Samuel Brem,
Ermin Malic
Abstract:
Optical and transport properties of doped monolayer semiconductors are dominated by trions, which are three-particle compounds formed by two electrons and one hole or vice versa. In this work, we investigate the trion-phonon interaction on a microscopic footing and apply our model to the exemplary case of a molybdenum diselenide (MoSe2) monolayer. We determine the trion series of states and their…
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Optical and transport properties of doped monolayer semiconductors are dominated by trions, which are three-particle compounds formed by two electrons and one hole or vice versa. In this work, we investigate the trion-phonon interaction on a microscopic footing and apply our model to the exemplary case of a molybdenum diselenide (MoSe2) monolayer. We determine the trion series of states and their internal quantum structure by solving the trion Schrödinger equation. Transforming the system into a trion basis and solving equations of motion, including the trion-phonon interaction within the second-order Born-Markov approximation, provides a microscopic access to the trion dynamics. In particular, we investigate trion propagation and compute the diffusion coefficient and mobility. In the low density limit, we find that trions propagate less efficiently than excitons and electrons due to their stronger coupling with phonons and their larger mass. For increasing densities, we predict a drastic enhancement of diffusion caused by the build-up of a large pressure by the degenerate trion gas, which is a direct consequence of the fermionic character of trions. Our work provides microscopic insights into the trion-phonon interaction and its impact on the diffusion behaviour in atomically thin semiconductors.
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Submitted 8 September, 2022; v1 submitted 5 July, 2022;
originally announced July 2022.
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Dark exciton-exciton annihilation in monolayer WSe$_2$
Authors:
Daniel Erkensten,
Samuel Brem,
Koloman Wagner,
Roland Gillen,
Raul Perea-Causin,
Jonas D. Ziegler,
Takashi Taniguchi,
Kenji Watanabe,
Janina Maultzsch,
Alexey Chernikov,
Ermin Malic
Abstract:
The exceptionally strong Coulomb interaction in semiconducting transition-metal dichalcogenides (TMDs) gives rise to a rich exciton landscape consisting of bright and dark exciton states. At elevated densities, excitons can interact through exciton-exciton annihilation (EEA), an Auger-like recombination process limiting the efficiency of optoelectronic applications. Although EEA is a well-known an…
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The exceptionally strong Coulomb interaction in semiconducting transition-metal dichalcogenides (TMDs) gives rise to a rich exciton landscape consisting of bright and dark exciton states. At elevated densities, excitons can interact through exciton-exciton annihilation (EEA), an Auger-like recombination process limiting the efficiency of optoelectronic applications. Although EEA is a well-known and particularly important process in atomically thin semiconductors determining exciton lifetimes and affecting transport at elevated densities, its microscopic origin has remained elusive. In this joint theory-experiment study combining microscopic and material-specific theory with time- and temperature-resolved photoluminescence measurements, we demonstrate the key role of dark intervalley states that are found to dominate the EEA rate in monolayer WSe$_2$. We reveal an intriguing, characteristic temperature dependence of Auger scattering in this class of materials with an excellent agreement between theory and experiment. Our study provides microscopic insights into the efficiency of technologically relevant Auger scattering channels within the remarkable exciton landscape of atomically thin semiconductors.
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Submitted 20 December, 2021; v1 submitted 9 June, 2021;
originally announced June 2021.
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Non-equilibrium diffusion of dark excitons in atomically thin semiconductors
Authors:
Roberto Rosati,
Koloman Wagner,
Samuel Brem,
Raül Perea-Causín,
Jonas D. Ziegler,
Jonas Zipfel,
Takashi Taniguchi,
Kenji Watanabe,
Alexey Chernikov,
Ermin Malic
Abstract:
Atomically thin semiconductors provide an excellent platform to study intriguing many-particle physics of tightly-bound excitons. In particular, the properties of tungsten-based transition metal dichalcogenides are determined by a complex manifold of bright and dark exciton states. While dark excitons are known to dominate the relaxation dynamics and low-temperature photoluminescence, their impact…
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Atomically thin semiconductors provide an excellent platform to study intriguing many-particle physics of tightly-bound excitons. In particular, the properties of tungsten-based transition metal dichalcogenides are determined by a complex manifold of bright and dark exciton states. While dark excitons are known to dominate the relaxation dynamics and low-temperature photoluminescence, their impact on the spatial propagation of excitons has remained elusive. In our joint theory-experiment study, we address this intriguing regime of dark state transport by resolving the spatio-temporal exciton dynamics in hBN-encapsulated WSe$_2$ monolayers after resonant excitation. We find clear evidence of an unconventional, time-dependent diffusion during the first tens of picoseconds, exhibiting strong deviation from the steady-state propagation. Dark exciton states are initially populated by phonon emission from the bright states, resulting in creation of hot excitons whose rapid expansion leads to a transient increase of the diffusion coefficient by more than one order of magnitude. These findings are relevant for both fundamental understanding of the spatio-temporal exciton dynamics in atomically thin materials as well as their technological application by enabling rapid diffusion.
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Submitted 21 May, 2021;
originally announced May 2021.
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Momentum-resolved observation of exciton formation dynamics in monolayer WS$_2$
Authors:
Robert Wallauer,
Raul Perea-Causin,
Lasse Münster,
Sarah Zajusch,
Samuel Brem,
Jens Güdde,
Katsumi Tanimura,
Kaiqiang Lin,
Rupert Huber,
Ermin Malic,
Ulrich Höfer
Abstract:
The dynamics of exciton formation in transition metal dichalcogenides is difficult to measure experimentally, since many momentum-indirect exciton states are not accessible to optical interband spectroscopy. Here, we combine a tuneable pump, high-harmonic probe laser source with a 3D momentum imaging technique to map photoemitted electrons from monolayer WS$_2$. This provides momentum-, energy- an…
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The dynamics of exciton formation in transition metal dichalcogenides is difficult to measure experimentally, since many momentum-indirect exciton states are not accessible to optical interband spectroscopy. Here, we combine a tuneable pump, high-harmonic probe laser source with a 3D momentum imaging technique to map photoemitted electrons from monolayer WS$_2$. This provides momentum-, energy- and time-resolved access to excited states on an ultrafast timescale. The high temporal resolution of the setup allows us to trace the early-stage exciton dynamics on its intrinsic timescale and observe the formation of a momentum-forbidden dark K$Σ$ exciton a few tens of femtoseconds after optical excitation. By tuning the excitation energy we manipulate the temporal evolution of the coherent excitonic polarization and observe its influence on the dark exciton formation. The experimental results are in excellent agreement with a fully microscopic theory, resolving the temporal and spectral dynamics of bright and dark excitons in WS$_2$.
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Submitted 28 May, 2021; v1 submitted 21 December, 2020;
originally announced December 2020.
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Microscopic understanding of ultrafast charge transfer in van-der-Waals heterostructures
Authors:
R. Krause,
S. Aeschlimann,
M. Chavez-Cervantes,
R. Perea-Causin,
S. Brem,
E. Malic,
S. Forti,
F. Fabbri,
C. Coletti,
I. Gierz
Abstract:
Van-der-Waals heterostructures show many intriguing phenomena including ultrafast charge separation following strong excitonic absorption in the visible spectral range. However, despite the enormous potential for future applications in the field of optoelectronics, the underlying microscopic mechanism remains controversial. Here we use time- and angle-resolved photoemission spectroscopy combined w…
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Van-der-Waals heterostructures show many intriguing phenomena including ultrafast charge separation following strong excitonic absorption in the visible spectral range. However, despite the enormous potential for future applications in the field of optoelectronics, the underlying microscopic mechanism remains controversial. Here we use time- and angle-resolved photoemission spectroscopy combined with microscopic many-particle theory to reveal the relevant microscopic charge transfer channels in epitaxial WS$_2$/graphene heterostructures. We find that the timescale for efficient ultrafast charge separation in the material is determined by direct tunneling at those points in the Brillouin zone where WS$_2$ and graphene bands cross, while the lifetime of the charge separated transient state is set by defect-assisted tunneling through localized sulphur vacanices. The subtle interplay of intrinsic and defect-related charge transfer channels revealed in the present work can be exploited for the design of highly efficient light harvesting and detecting devices.
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Submitted 16 December, 2020;
originally announced December 2020.
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Microscopic picture of electron-phonon interaction in two-dimensional halide perovskites
Authors:
David Feldstein,
Raul Perea-Causin,
Shuli Wang,
Mateusz Dyksik,
Kenji Watanabe,
Takashi Taniguchi,
Paulina Plochocka,
Ermin Malic
Abstract:
Perovskites have attracted much attention due to their remarkable optical properties. While it is well established that excitons dominate their optical response, the impact of higher excitonic states and formation of phonon sidebands in optical spectra still need to be better understood. Here, we perform a theoretical study on excitonic properties of monolayered hybrid organic perovskites -- suppo…
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Perovskites have attracted much attention due to their remarkable optical properties. While it is well established that excitons dominate their optical response, the impact of higher excitonic states and formation of phonon sidebands in optical spectra still need to be better understood. Here, we perform a theoretical study on excitonic properties of monolayered hybrid organic perovskites -- supported by temperature-dependent photoluminescence measurements. Solving the Wannier equation, we obtain microscopic access to the Rydberg-like series of excitonic states including their wavefunctions and binding energies. Exploiting the generalized Elliot formula, we calculate the photoluminescence spectra demonstrating a pronounced contribution of a phonon sideband for temperatures up to 50 K -- in agreement with experimental measurements. Finally, we predict temperature-dependent linewidths of the three energetically lowest excitonic transitions and identify the underlying phonon-driven scattering processes.
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Submitted 14 October, 2020;
originally announced October 2020.
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Phonon-assisted Exciton Dissociation in Transition Metal Dichalcogenides
Authors:
Raul Perea-Causin,
Samuel Brem,
Ermin Malic
Abstract:
Monolayers of transition metal dichalcogenides (TMDs) have been established in the last years as promising materials for novel optoelectronic devices. However, the performance of such devices is often limited by the dissociation of tightly bound excitons into free electrons and holes. While previous studies have investigated tunneling at large electric fields, we focus in this work on phonon-assis…
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Monolayers of transition metal dichalcogenides (TMDs) have been established in the last years as promising materials for novel optoelectronic devices. However, the performance of such devices is often limited by the dissociation of tightly bound excitons into free electrons and holes. While previous studies have investigated tunneling at large electric fields, we focus in this work on phonon-assisted exciton dissociation that is expected to be the dominant mechanism at small fields. We present a microscopic model based on the density matrix formalism providing access to time- and momentum-resolved exciton dynamics including phonon-assisted dissociation. We track the pathway of excitons from optical excitation via thermalization to dissociation, identifying the main transitions and dissociation channels. Furthermore, we find intrinsic limits for the quantum efficiency and response time of a TMD-based photodetector and investigate their tunability with externally accessible knobs, such as excitation energy, substrate screening, temperature and strain. Our work provides microscopic insights in fundamental mechanisms behind exciton dissociation and can serve as a guide for the optimization of TMD-based optoelectronic devices.
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Submitted 23 September, 2020;
originally announced September 2020.
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Strain-dependent exciton diffusion in transition metal dichalcogenides
Authors:
Roberto Rosati,
Samuel Brem,
Raül Perea-Causín,
Robert Schmidt,
Iris Niehues,
Steffen Michaelis de Vasconcellos,
Rudolf Bratschitsch,
Ermin Malic
Abstract:
Monolayers of transition metal dichalcogenides (TMDs) have a remarkable excitonic landscape with deeply bound bright and dark exciton states. Their properties are strongly affected by lattice distortions that can be created in a controlled way via strain. Here, we perform a joint theory-experiment study investigating exciton diffusion in strained tungsten disulfide (WS$_2$) monolayers. We reveal a…
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Monolayers of transition metal dichalcogenides (TMDs) have a remarkable excitonic landscape with deeply bound bright and dark exciton states. Their properties are strongly affected by lattice distortions that can be created in a controlled way via strain. Here, we perform a joint theory-experiment study investigating exciton diffusion in strained tungsten disulfide (WS$_2$) monolayers. We reveal a non-trivial and non-monotonic influence of strain. Lattice deformations give rise to different energy shifts for bright and dark excitons changing the excitonic landscape, the efficiency of intervalley scattering channels, and the weight of single exciton species to the overall exciton diffusion. We predict a minimal diffusion coefficient in unstrained WS$_2$ followed by a steep speed-up by a factor of 3 for tensile biaxial strain at about 0.6\% strain - in excellent agreement with our experiments. The obtained microscopic insights on the impact of strain on exciton diffusion are applicable to a broad class of multi-valley 2D materials.
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Submitted 19 August, 2020;
originally announced August 2020.
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Temporal evolution of low-temperature phonon sidebands in WSe$_2$ monolayers
Authors:
Roberto Rosati,
Samuel Brem,
Raül Perea-Causín,
Koloman Wagner,
Edith Wietek,
Jonas Zipfel,
Malte Selig,
Takashi Taniguchi,
Kenji Watanabe,
Andreas Knorr,
Alexey Chernikov,
Ermin Malic
Abstract:
Low-temperature photoluminescence (PL) of hBN-encapsulated monolayer tungsten diselenide (WSe$_2$) shows a multitude of sharp emission peaks below the bright exciton. Some of them have been recently identified as phonon sidebands of momentum-dark states. However, the exciton dynamics behind the emergence of these sidebands has not been revealed yet. In this joint theory-experiment study, we theore…
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Low-temperature photoluminescence (PL) of hBN-encapsulated monolayer tungsten diselenide (WSe$_2$) shows a multitude of sharp emission peaks below the bright exciton. Some of them have been recently identified as phonon sidebands of momentum-dark states. However, the exciton dynamics behind the emergence of these sidebands has not been revealed yet. In this joint theory-experiment study, we theoretically predict and experimentally observe time-resolved PL providing microscopic insights into thermalization of hot excitons formed after optical excitation. In good agreement between theory and experiment, we demonstrate a spectral red-shift of phonon sidebands on a timescale of tens of picoseconds reflecting the phonon-driven thermalization of hot excitons in momentum-dark states. Furthermore, we predict the emergence of a transient phonon sideband that vanishes in the stationary PL. The obtained microscopic insights are applicable to a broad class of 2D materials with multiple exciton valleys.
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Submitted 17 June, 2020;
originally announced June 2020.
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Exciton diffusion in monolayer semiconductors with suppressed disorder
Authors:
Jonas Zipfel,
Marvin Kulig,
Raül Perea-Causín,
Samuel Brem,
Jonas D. Ziegler,
Roberto Rosati,
Takashi Taniguchi,
Kenji Watanabe,
Mikhail M. Glazov,
Ermin Malic,
Alexey Chernikov
Abstract:
Tightly bound excitons in monolayer semiconductors represent a versatile platform to study two-dimensional propagation of neutral quasiparticles. Their intrinsic properties, however, can be severely obscured by spatial energy fluctuations due to a high sensitivity to the immediate environment. Here, we take advantage of the encapsulation of individual layers in hexagonal boron nitride to strongly…
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Tightly bound excitons in monolayer semiconductors represent a versatile platform to study two-dimensional propagation of neutral quasiparticles. Their intrinsic properties, however, can be severely obscured by spatial energy fluctuations due to a high sensitivity to the immediate environment. Here, we take advantage of the encapsulation of individual layers in hexagonal boron nitride to strongly suppress environmental disorder. Diffusion of excitons is then directly monitored using time- and spatially-resolved emission microscopy at ambient conditions. We consistently find very efficient propagation with linear diffusion coefficients up to 10\,cm$^2$/s, corresponding to room temperature effective mobilities as high as 400\,cm$^2$/Vs as well as a correlation between rapid diffusion and short population lifetime. At elevated densities we detect distinct signatures of many-particle interactions and consequences of strongly suppressed Auger-like exciton-exciton annihilation. A combination of analytical and numerical theoretical approaches is employed to provide pathways towards comprehensive understanding of the observed linear and non-linear propagation phenomena. We emphasize the role of dark exciton states and present a mechanism for diffusion facilitated by free electron hole plasma from entropy-ionized excitons.
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Submitted 20 March, 2020; v1 submitted 7 November, 2019;
originally announced November 2019.
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Negative excitonic diffusion in transition metal dichalcogenides
Authors:
Roberto Rosati,
Raül Perea-Causín,
Samuel Brem,
Ermin Malic
Abstract:
While exciton relaxation in transition metal dichalcogenides (TMDs) has been intensively studied, spatial exciton propagation has received only little attention - in spite of being a key process for optoelectronics and having already shown interesting unconventional behaviours (e.g. spatial halos). Here, we study the spatiotemporal dynamics in TMDs and track the way of optically excited excitons i…
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While exciton relaxation in transition metal dichalcogenides (TMDs) has been intensively studied, spatial exciton propagation has received only little attention - in spite of being a key process for optoelectronics and having already shown interesting unconventional behaviours (e.g. spatial halos). Here, we study the spatiotemporal dynamics in TMDs and track the way of optically excited excitons in time, momentum, and space. In particular, we investigate the temperature-dependent exciton diffusion including the remarkable exciton landscape constituted by bright and dark states. Based on a fully quantum mechanical approach, we show at low temperatures an unexpected negative transient diffusion. This phenomenon can be traced back to the existence of dark exciton states in TMDs and is a result of an interplay between spatial exciton diffusion and intervalley exciton-phonon scattering.
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Submitted 21 August, 2019;
originally announced August 2019.
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Exciton propagation and halo formation in two-dimensional materials
Authors:
Raul Perea-Causin,
Samuel Brem,
Roberto Rosati,
Roland Jago,
Marvin Kulig,
Jonas D. Ziegler,
Jonas Zipfel,
Alexey Chernikov,
Ermin Malic
Abstract:
The interplay of optics, dynamics and transport is crucial for the design of novel optoelectronic devices, such as photodetectors and solar cells. In this context, transition metal dichalcogenides (TMDs) have received much attention. Here, strongly bound excitons dominate optical excitation, carrier dynamics and diffusion processes. While the first two have been intensively studied, there is a lac…
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The interplay of optics, dynamics and transport is crucial for the design of novel optoelectronic devices, such as photodetectors and solar cells. In this context, transition metal dichalcogenides (TMDs) have received much attention. Here, strongly bound excitons dominate optical excitation, carrier dynamics and diffusion processes. While the first two have been intensively studied, there is a lack of fundamental understanding of non-equilibrium phenomena associated with exciton transport that is of central importance e.g. for high efficiency light harvesting. In this work, we provide microscopic insights into the interplay of exciton propagation and many-particle interactions in TMDs. Based on a fully quantum mechanical approach and in excellent agreement with photoluminescence measurements, we show that Auger recombination and emission of hot phonons act as a heating mechanism giving rise to strong spatial gradients in excitonic temperature. The resulting thermal drift leads to an unconventional exciton diffusion characterized by spatial exciton halos.
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Submitted 5 June, 2019;
originally announced June 2019.
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Spatio-temporal dynamics in graphene
Authors:
Roland Jago,
Raül Perea-Causin,
Samuel Brem,
Ermin Malic
Abstract:
Temporally and spectrally resolved dynamics of optically excited carriers in graphene has been intensively studied theoretically and experimentally, whereas carrier diffusion in space has attracted much less attention. Understanding the spatio-temporal carrier dynamics is of key importance for optoelectronic applications, where carrier transport phenomena play an important role. In this work, we p…
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Temporally and spectrally resolved dynamics of optically excited carriers in graphene has been intensively studied theoretically and experimentally, whereas carrier diffusion in space has attracted much less attention. Understanding the spatio-temporal carrier dynamics is of key importance for optoelectronic applications, where carrier transport phenomena play an important role. In this work, we provide a microscopic access to the time-, momentum-, and space-resolved dynamics of carriers in graphene. We determine the diffusion coefficient to be $D \approx 360$cm$^{2}$/s and reveal the impact of carrier-phonon and carrier-carrier scattering on the diffusion process. In particular, we show that phonon-induced scattering across the Dirac cone gives rise to back-diffusion counteracting the spatial broadening of the carrier distribution.
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Submitted 29 March, 2019;
originally announced March 2019.
