Showing 1–50 of 121 results for author: Pop, E

CMOS-compatible Strain Engineering for High-Performance Monolayer Semiconductor Transistors

Authors: Marc Jaikissoon, Çağıl Köroğlu, Jerry A. Yang, Kathryn M. Neilson, Krishna C. Saraswat, Eric Pop

Abstract: Strain engineering has played a key role in modern silicon electronics, having been introduced as a mobility booster in the 1990s and commercialized in the early 2000s. Achieving similar advances with two-dimensional (2D) semiconductors in a CMOS (complementary metal oxide semiconductor) compatible manner would radically improve the industrial viability of 2D transistors. Here, we show silicon nit… ▽ More Strain engineering has played a key role in modern silicon electronics, having been introduced as a mobility booster in the 1990s and commercialized in the early 2000s. Achieving similar advances with two-dimensional (2D) semiconductors in a CMOS (complementary metal oxide semiconductor) compatible manner would radically improve the industrial viability of 2D transistors. Here, we show silicon nitride capping layers can impart strain to monolayer MoS2 transistors on conventional silicon substrates, enhancing their electrical performance with a low thermal budget (350 °C), CMOS-compatible approach. Strained back-gated and dual-gated MoS2 transistors demonstrate median increases up to 60% and 45% in on-state current, respectively. The greatest improvements are found when both transistor channels and contacts are reduced to ~200 nm, reaching saturation currents of 488 uA/um, higher than any previous reports at such short contact pitch. Simulations reveal that most benefits arise from tensile strain lowering the contact Schottky barriers, and that further reducing device dimensions (including contacts) will continue to offer increased strain and performance improvements. △ Less

Submitted 29 June, 2024; v1 submitted 15 May, 2024; originally announced May 2024.

Mobility and Threshold Voltage Extraction in Transistors with Gate-Voltage-Dependent Contact Resistance

Authors: Robert K. A. Bennett, Lauren Hoang, Connor Cremers, Andrew J. Mannix, Eric Pop

Abstract: The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often experience contact gating, i.e., electric fields from the gate modulate the contact resistance during measurements, which can lead conventional extraction techniques to estimate mobility incorrectly even by a factor >2. This… ▽ More The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often experience contact gating, i.e., electric fields from the gate modulate the contact resistance during measurements, which can lead conventional extraction techniques to estimate mobility incorrectly even by a factor >2. This error can be minimized by measuring transistors at high gate-source bias, |$V_\mathrm{gs}$|, but this regime is often inaccessible in emerging devices that suffer from high contact resistance or early gate dielectric breakdown. Here, we propose a method of extracting mobility in transistors with gate-dependent contact resistance that does not require operation at high |$V_\mathrm{gs}$|, enabling accurate mobility extraction even in emerging transistors with strong contact gating. Our approach relies on updating the transfer length method (TLM) and can achieve <10% error even in regimes where conventional techniques overestimate mobility by >2$\times$. △ Less

Submitted 19 June, 2024; v1 submitted 29 April, 2024; originally announced April 2024.

Comments: Corrected values tabulated in Figure 2d (surrounding discussion/conclusions unchanged); updated discussion surrounding Monte Carlo approach for error propagation; corrected typos

Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition

Authors: Zhepeng Zhang, Lauren Hoang, Marisa Hocking, Jenny Hu, Gregory Zaborski Jr., Pooja Reddy, Johnny Dollard, David Goldhaber-Gordon, Tony F. Heinz, Eric Pop, Andrew J. Mannix

Abstract: Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs) are an exciting platform for new excitonic physics and next-generation electronics, creating a strong demand to understand their growth, doping, and heterostructures. Despite significant progress in solid-source (SS-) and metal-organic chemical vapor deposition (MOCVD), further optimization is necessary to grow highly cry… ▽ More Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs) are an exciting platform for new excitonic physics and next-generation electronics, creating a strong demand to understand their growth, doping, and heterostructures. Despite significant progress in solid-source (SS-) and metal-organic chemical vapor deposition (MOCVD), further optimization is necessary to grow highly crystalline 2D TMDCs with controlled doping. Here, we report a hybrid MOCVD growth method that combines liquid-phase metal precursor deposition and vapor-phase organo-chalcogen delivery to leverage the advantages of both MOCVD and SS-CVD. Using our hybrid approach, we demonstrate WS$_2$ growth with tunable morphologies - from separated single-crystal domains to continuous monolayer films - on a variety of substrates, including sapphire, SiO$_2$, and Au. These WS$_2$ films exhibit narrow neutral exciton photoluminescence linewidths down to 33 meV and room-temperature mobility up to 34 - 36 cm$^2$V$^-$$^1$s$^-$$^1$). Through simple modifications to the liquid precursor composition, we demonstrate the growth of V-doped WS$_2$, MoxW$_1$$_-$$_x$S$_2$ alloys, and in-plane WS$_2$-MoS$_2$ heterostructures. This work presents an efficient approach for addressing a variety of TMDC synthesis needs on a laboratory scale. △ Less

Submitted 6 March, 2024; originally announced March 2024.

Direct Exfoliation of Nanoribbons from Bulk van der Waals Crystals

Authors: Ashley P. Saunders, Victoria Chen, Jierong Wang, Amalya C. Johnson, Amy S. McKeown-Green, Helen J. Zeng, T. Kien Mac, Tuan Trinh, Tony F. Heinz, Eric Pop, Fang Liu

Abstract: Confinement of monolayers into quasi-one-dimensional atomically-thin nanoribbons could lead to novel quantum phenomena beyond those achieved in their bulk and monolayer counterparts. However, current experimental availability of nanoribbon species beyond graphene has been limited to bottom-up synthesis or top-down patterning. In this study, we introduce a versatile and direct lithography-free appr… ▽ More Confinement of monolayers into quasi-one-dimensional atomically-thin nanoribbons could lead to novel quantum phenomena beyond those achieved in their bulk and monolayer counterparts. However, current experimental availability of nanoribbon species beyond graphene has been limited to bottom-up synthesis or top-down patterning. In this study, we introduce a versatile and direct lithography-free approach to exfoliate a variety of bulk van der Waals (vdW) crystals into nanoribbons. Akin to the Scotch tape exfoliation in producing monolayers, this technique provides convenient access to a wide range of nanoribbons derived from their corresponding bulk crystals, including MoS2, WS2, MoSe2, WSe2, MoTe2, WTe2, ReS2, and hBN. The nanoribbons are single-crystalline, parallel-aligned, flat, and have high aspect ratio. We demonstrated the electrical, magnetic, and optical properties from the confinement, strain, and edge configurations of these nanoribbons. This versatile preparation technique will pave the way for future experimental investigation and broad applications in optoelectronic, sensing, electronic and quantum devices. △ Less

Submitted 17 February, 2024; originally announced February 2024.

Comments: 18 pages, 5 figures

Toward Mass-Production of Transition Metal Dichalcogenide Solar Cells: Scalable Growth of Photovoltaic-Grade Multilayer WSe2 by Tungsten Selenization

Authors: Kathryn M. Neilson, Sarallah Hamtaei, Koosha Nassiri Nazif, Joshua M. Carr, Sepideh Rahimisheikh, Frederick U. Nitta, Guy Brammertz, Jeffrey L. Blackburn, Joke Hadermann, Krishna C. Saraswat, Obadiah G. Reid, Bart Vermang, Alwin Daus, Eric Pop

Abstract: Semiconducting transition metal dichalcogenides (TMDs) are promising for high-specific-power photovoltaics due to desirable band gaps, high absorption coefficients, and ideally dangling-bond-free surfaces. Despite their potential, the majority of TMD solar cells are fabricated in a non-scalable fashion using exfoliated materials due to the absence of high-quality, large-area, multilayer TMDs. Here… ▽ More Semiconducting transition metal dichalcogenides (TMDs) are promising for high-specific-power photovoltaics due to desirable band gaps, high absorption coefficients, and ideally dangling-bond-free surfaces. Despite their potential, the majority of TMD solar cells are fabricated in a non-scalable fashion using exfoliated materials due to the absence of high-quality, large-area, multilayer TMDs. Here, we present the scalable, thickness-tunable synthesis of multilayer tungsten diselenide (WSe$_{2}$) films by selenizing pre-patterned tungsten with either solid source selenium or H$_{2}$Se precursors, which leads to smooth, wafer-scale WSe$_{2}$ films with a layered van der Waals structure. The films have charge carrier lifetimes up to 144 ns, over 14x higher than large-area TMD films previously demonstrated. Such high carrier lifetimes correspond to power conversion efficiency of ~22% and specific power of ~64 W g$^{-1}$ in a packaged solar cell, or ~3 W g$^{-1}$ in a fully-packaged solar module. This paves the way for the mass-production of high-efficiency multilayer WSe$_{2}$ solar cells at low cost. △ Less

Submitted 13 February, 2024; originally announced February 2024.

Students' interest in knowledge acquisition in Artificial Intelligence

Authors: Manuela-Andreea Petrescu, Emilia-Loredana Pop, Tudor-Dan Mihoc

Abstract: Some students' expectations and points of view related to the Artificial Intelligence course are explored and analyzed in this study. We anonymous collected answers from 58 undergraduate students out of 200 enrolled in the Computer Science specialization. The answers were analysed and interpreted using thematic analysis to find out their interests and attractive and unattractive aspects related to… ▽ More Some students' expectations and points of view related to the Artificial Intelligence course are explored and analyzed in this study. We anonymous collected answers from 58 undergraduate students out of 200 enrolled in the Computer Science specialization. The answers were analysed and interpreted using thematic analysis to find out their interests and attractive and unattractive aspects related to the Artificial Intelligence study topic. We concluded that students are interested in Artificial Intelligence due to its trendiness, applicability, their passion and interest in the subject, the potential for future growth, and high salaries. However, the students' expectations were mainly related to achieving medium knowledge in the Artificial Intelligence field, and men seem to be more interested in acquiring high-level skills than women. The most common part that wasn't enjoyed by the students was the mathematical aspect used in Artificial Intelligence. Some of them (a small group) were also aware of the Artificial Intelligence potential which could be used in an unethical manner for negative purposes. Our study also provides a short comparison to the Databases course, in which students were not that passionate or interested in achieving medium knowledge, their interest was related to DB usage and basic information. △ Less

Submitted 26 November, 2023; originally announced November 2023.

ACM Class: I.2.6; K.3.2; D.m

Journal ref: 27th International Conference on Knowledge-Based and Intelligent Information & Engineering Systems (KES 2023), Procedia Computer Science 225C, ISSN 1877-0509, 1027-1035, 2023

Biaxial Tensile Strain Enhances Electron Mobility of Monolayer Transition Metal Dichalcogenides

Authors: Jerry A. Yang, Robert K. A. Bennett, Lauren Hoang, Zhepeng Zhang, Kamila J. Thompson, Antonios Michail, John Parthenios, Konstantinos Papagelis, Andrew J. Mannix, Eric Pop

Abstract: Strain engineering can modulate the material properties of two-dimensional (2D) semiconductors for electronic and optoelectronic applications. Recent theory and experiments have found that uniaxial tensile strain can improve the electron mobility of monolayer MoS$_2$, a 2D semiconductor, but the effects of biaxial strain on charge transport are not well-understood in 2D semiconductors. Here, we us… ▽ More Strain engineering can modulate the material properties of two-dimensional (2D) semiconductors for electronic and optoelectronic applications. Recent theory and experiments have found that uniaxial tensile strain can improve the electron mobility of monolayer MoS$_2$, a 2D semiconductor, but the effects of biaxial strain on charge transport are not well-understood in 2D semiconductors. Here, we use biaxial tensile strain on flexible substrates to probe the electron mobility in monolayer WS$_2$ and MoS$_2$ transistors. This approach experimentally achieves ~2x higher on-state current and mobility with ~0.3% applied biaxial strain in WS$_2$, the highest mobility improvement at the lowest strain reported to date. We also examine the mechanisms behind this improvement through density functional theory simulations, concluding that the enhancement is primarily due to reduced intervalley electron-phonon scattering. These results underscore the role of strain engineering 2D semiconductors for flexible electronics, sensors, integrated circuits, and other optoelectronic applications. △ Less

Submitted 28 November, 2023; v1 submitted 19 September, 2023; originally announced September 2023.

Comments: Corrected author list

Efficiency Limit of Transition Metal Dichalcogenide Solar Cells

Authors: Koosha Nassiri Nazif, Frederick U. Nitta, Alwin Daus, Krishna C. Saraswat, Eric Pop

Abstract: Transition metal dichalcogenides (TMDs) show great promise as absorber materials in high-specific-power (i.e. high-power-per-weight) solar cells, due to their high optical absorption, desirable band gaps, and self-passivated surfaces. However, the ultimate performance limits of TMD solar cells remain unknown today. Here, we establish the efficiency limits of multilayer MoS2, MoSe2, WS2, and WSe2 s… ▽ More Transition metal dichalcogenides (TMDs) show great promise as absorber materials in high-specific-power (i.e. high-power-per-weight) solar cells, due to their high optical absorption, desirable band gaps, and self-passivated surfaces. However, the ultimate performance limits of TMD solar cells remain unknown today. Here, we establish the efficiency limits of multilayer MoS2, MoSe2, WS2, and WSe2 solar cells under AM 1.5 G illumination as a function of TMD film thickness and material quality. We use an extended version of the detailed balance method which includes Auger and defect-assisted Shockley-Reed-Hall recombination mechanisms in addition to radiative losses, calculated from measured optical absorption spectra. We demonstrate that single-junction solar cells with TMD films as thin as 50 nm could in practice achieve up to 25% power conversion efficiency with the currently available material quality, making them an excellent choice for high-specific-power photovoltaics. △ Less

Submitted 24 July, 2023; originally announced July 2023.

Comments: 24 pages

Journal ref: Commun Phys 6, 367 (2023)

Non-volatile Phase-only Transmissive Spatial Light Modulators

Authors: Zhuoran Fang, Rui Chen, Johannes E. Fröch, Quentin A. A. Tanguy, Asir Intisar Khan, Xiangjin Wu, Virat Tara, Arnab Manna, David Sharp, Christopher Munley, Forrest Miller, Yang Zhao, Sarah J. Geiger, Karl F. Böhringer, Matthew Reynolds, Eric Pop, Arka Majumdar

Abstract: Free-space modulation of light is crucial for many applications, from light detection and ranging to virtual or augmented reality. Traditional means of modulating free-space light involves spatial light modulators based on liquid crystals and microelectromechanical systems, which are bulky, have large pixel areas (~10 micron x 10 micron), and require high driving voltage. Recent progress in meta-o… ▽ More Free-space modulation of light is crucial for many applications, from light detection and ranging to virtual or augmented reality. Traditional means of modulating free-space light involves spatial light modulators based on liquid crystals and microelectromechanical systems, which are bulky, have large pixel areas (~10 micron x 10 micron), and require high driving voltage. Recent progress in meta-optics has shown promise to circumvent some of the limitations. By integrating active materials with sub-wavelength pixels in a meta-optic, the power consumption can be dramatically reduced while achieving a faster speed. However, these reconfiguration methods are volatile and hence require constant application of control signals, leading to phase jitter and crosstalk. Additionally, to control a large number of pixels, it is essential to implement a memory within each pixel to have a tractable number of control signals. Here, we develop a device with nonvolatile, electrically programmable, phase-only modulation of free-space infrared radiation in transmission using the low-loss phase-change material (PCM) Sb2Se3. By coupling an ultra-thin PCM layer to a high quality (Q)-factor (Q~406) diatomic metasurface, we demonstrate a phase-only modulation of ~0.25pi (~0.2pi) in simulation (experiment), ten times larger than a bare PCM layer of the same thickness. The device shows excellent endurance over 1,000 switching cycles. We then advance the device geometry, to enable independent control of 17 meta-molecules, achieving ten deterministic resonance levels with a 2pi phase shift. By independently controlling the phase delay of pixels, we further show tunable far-field beam shaping. Our work paves the way to realizing non-volatile transmissive phase-only spatial light modulators. △ Less

Submitted 22 July, 2023; originally announced July 2023.

Tendencies in Database Learning for Undergraduate Students: Learning In-Depth or Getting the Work Done?

Authors: Emilia Pop, Manuela Petrescu

Abstract: This study explores and analyzes the learning tendencies of second-year students enrolled in different lines of study related to the Databases course. There were 79 answers collected from 191 enrolled students that were analyzed and interpreted using thematic analysis. The participants in the study provided two sets of answers, anonymously collected (at the beginning and at the end of the course),… ▽ More This study explores and analyzes the learning tendencies of second-year students enrolled in different lines of study related to the Databases course. There were 79 answers collected from 191 enrolled students that were analyzed and interpreted using thematic analysis. The participants in the study provided two sets of answers, anonymously collected (at the beginning and at the end of the course), thus allowing us to have clear data regarding their interests and to find out their tendencies. We looked into their expectations and if they were met; we concluded that the students want to learn only database basics. Their main challenges were related to the course homework. We combined the information and the answers related to 1) other database-related topics that they would like to learn, 2) how they plan to use the acquired information, and 3) overall interest in learning other database-related topics. The conclusion was that students prefer learning only the basic information that could help them achieve their goals: creating an application or using it at work. For these students, Getting the work done is preferred to Learning in-depth. △ Less

Submitted 7 July, 2023; originally announced July 2023.

Comments: ENASE 2023, Proceedings of the 18th International Conference on Evaluation of Novel Approaches to Software Engineering

Student's Attraction for a Carrier Path Related to Databases and SQL: Usability vs Efficiency in Students' Perception -Case Study

Authors: Manuela Petrescu, Emilia Pop

Abstract: This study explores and analyses the expectations of second-year students enrolled in different lines of study related to Database course, as their interest in having a carrier path in a database related domain and how it reflects the job demands from the market. The participants in the study provided two sets of answers, anonymously collected (in the begging and in the middle of the course), thus… ▽ More This study explores and analyses the expectations of second-year students enrolled in different lines of study related to Database course, as their interest in having a carrier path in a database related domain and how it reflects the job demands from the market. The participants in the study provided two sets of answers, anonymously collected (in the begging and in the middle of the course), thus allowing us to track how their interests changed as long as they found out more about the subject. We asked for their experience and initial knowledge, we found out that they are aware of the SQL and usability and importance of databases, but they appreciated the database knowledge will be used occasionally. Even if it was not the original scope of the paper, we also found out that men are more interested in learning in depth (acquiring security, performance, complexity database related information) than women do. In terms of the participants set, there were 87 answers from 191 enrolled students that were analyzed and interpreted using thematic analysis. △ Less

Submitted 7 July, 2023; originally announced July 2023.

Comments: Proceedings of the 15th International Conference on Computer Supported Education

Semimetal-Monolayer Transition Metal Dichalcogenides Photodetectors for Wafer-Scale Ultraviolet Photonics

Authors: Hon-Loen Sinn, Aravindh Kumar, Eric Pop, Akm Newaz

Abstract: Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs), such as MoS$_2$, are promising candidates for nanoscale photonics because of strong-light matter interactions. However, Fermi level pinning due to metal-induced gap (MIGS) states at the metals-monolayer MoS$_2$ interface limits the application of optoelectronic devices based on conventional metals because of the high con… ▽ More Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs), such as MoS$_2$, are promising candidates for nanoscale photonics because of strong-light matter interactions. However, Fermi level pinning due to metal-induced gap (MIGS) states at the metals-monolayer MoS$_2$ interface limits the application of optoelectronic devices based on conventional metals because of the high contact resistance of the Schottky contacts. On the other hand, a semimetal-TMD-semimetal device can overcome this limitation, where the MIGS are sufficiently suppressed and can result in ohmic contacts. Here we demonstrate the optoelectronic performance of a bismuth-monolayer (1L) MoS$_2$-bismuth device with ohmic electrical contacts and extraordinary optoelectronic properties. To address the wafer-scale production, we grew full coverage 1L MoS$_2$ by using chemical vapor deposition method. We measured high photoresponsivity of 300 A/W in the UV regime at 77 K, which translates into an external quantum efficiency (EQE) ~ 1000 or $10^5$%. We found that the 90% rise time of our devices at 77 K is 0.1 ms, which suggests that the current devices can operate at the speed of ~ 10 kHzきろへるつ. The combination of large-array device fabrication, high sensitivity, and high-speed response offers great potential for applications in photonics that includes integrated optoelectronic circuits. △ Less

Submitted 29 January, 2023; originally announced January 2023.

Comments: Accepted to Advanced Photonics Research

Journal ref: Advanced Photonics Research, 2023

How do Quantum Effects Influence the Capacitance and Carrier Density of Monolayer MoS$_2$ Transistors?

Authors: Robert K. A. Bennett, Eric Pop

Abstract: When transistor gate insulators have nanometer-scale equivalent oxide thickness (EOT), the gate capacitance ($C_\textrm{G}$) becomes smaller than the oxide capacitance ($C_\textrm{ox}$) due to the quantum capacitance and charge centroid capacitance of the channel. Here, we study the capacitance of monolayer MoS$_\textrm{2}$ as a prototypical two-dimensional (2D) channel while considering spatial v… ▽ More When transistor gate insulators have nanometer-scale equivalent oxide thickness (EOT), the gate capacitance ($C_\textrm{G}$) becomes smaller than the oxide capacitance ($C_\textrm{ox}$) due to the quantum capacitance and charge centroid capacitance of the channel. Here, we study the capacitance of monolayer MoS$_\textrm{2}$ as a prototypical two-dimensional (2D) channel while considering spatial variations in the potential, charge density, and density of states. At 0.5 nm EOT, the monolayer MoS$_\textrm{2}$ capacitance is smaller than its quantum capacitance, limiting the single-gated $C_\textrm{G}$ of an n-type channel to between 63% and 78% of $C_\textrm{ox}$ for gate overdrive voltages between 0.5 and 1 V. Despite these limitations, for dual-gated devices, the on-state $C_\textrm{G}$ of monolayer MoS$_\textrm{2}$ is 50% greater than that of silicon at 0.5 nm EOT and more than three times that of InGaAs at 1 nm EOT, indicating that 2D semiconductors are promising for nanoscale devices at future technology nodes. △ Less

Submitted 14 February, 2023; v1 submitted 9 January, 2023; originally announced January 2023.

Stateful Logic using Phase Change Memory

Authors: Barak Hoffer, Nicolás Wainstein, Christopher M. Neumann, Eric Pop, Eilam Yalon, Shahar Kvatinsky

Abstract: Stateful logic is a digital processing-in-memory technique that could address von Neumann memory bottleneck challenges while maintaining backward compatibility with standard von Neumann architectures. In stateful logic, memory cells are used to perform the logic operations without reading or moving any data outside the memory array. Stateful logic has been previously demonstrated using several res… ▽ More Stateful logic is a digital processing-in-memory technique that could address von Neumann memory bottleneck challenges while maintaining backward compatibility with standard von Neumann architectures. In stateful logic, memory cells are used to perform the logic operations without reading or moving any data outside the memory array. Stateful logic has been previously demonstrated using several resistive memory types, mostly by resistive RAM (RRAM). Here we present a new method to design stateful logic using a different resistive memory - phase change memory (PCM). We propose and experimentally demonstrate four logic gate types (NOR, IMPLY, OR, NIMP) using commonly used PCM materials. Our stateful logic circuits are different than previously proposed circuits due to the different switching mechanism and functionality of PCM compared to RRAM. Since the proposed stateful logic form a functionally complete set, these gates enable sequential execution of any logic function within the memory, paving the way to PCM-based digital processing-in-memory systems. △ Less

Submitted 29 December, 2022; originally announced December 2022.

Journal ref: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits (Volume: 8, Issue: 2, December 2022)

Imaging the electron charge density in monolayer MoS2 at the Ångstrom scale

Authors: Joel Martis, Sandhya Susarla, Archith Rayabharam, Cong Su, Timothy Paule, Philipp Pelz, Cassandra Huff, Xintong Xu, Hao-Kun Li, Marc Jaikissoon, Victoria Chen, Eric Pop, Krishna Saraswat, Alex Zettl, Narayana R. Aluru, Ramamoorthy Ramesh, Peter Ercius, Arun Majumdar

Abstract: Four-dimensional scanning transmission electron microscopy (4D-STEM) has recently gained widespread attention for its ability to image atomic electric fields with sub-Ångstrom spatial resolution. These electric field maps represent the integrated effect of the nucleus, core electrons and valence electrons, and separating their contributions is non-trivial. In this paper, we utilized simultaneously… ▽ More Four-dimensional scanning transmission electron microscopy (4D-STEM) has recently gained widespread attention for its ability to image atomic electric fields with sub-Ångstrom spatial resolution. These electric field maps represent the integrated effect of the nucleus, core electrons and valence electrons, and separating their contributions is non-trivial. In this paper, we utilized simultaneously acquired 4D-STEM center of mass (CoM) images and annular dark field (ADF) images to determine the electron charge density in monolayer MoS2. We find that both the core electrons and the valence electrons contribute to the derived electron charge density. However, due to blurring by the probe shape, the valence electron contribution forms a nearly featureless background while most of the spatial modulation comes from the core electrons. Our findings highlight the importance of probe shape in interpreting charge densities derived from 4D STEM. △ Less

Submitted 31 July, 2023; v1 submitted 17 October, 2022; originally announced October 2022.

Journal ref: Nature Communications 14(1) (2023) 1-8

Strain-Enhanced Mobility of Monolayer MoS2

Authors: Isha M. Datye, Alwin Daus, Ryan W. Grady, Kevin Brenner, Sam Vaziri, Eric Pop

Abstract: Strain engineering is an important method for tuning the properties of semiconductors and has been used to improve the mobility of silicon transistors for several decades. Recently, theoretical studies have predicted that strain can also improve the mobility of two-dimensional (2D) semiconductors, e.g. by reducing intervalley scattering or lowering effective masses. Here, we experimentally show st… ▽ More Strain engineering is an important method for tuning the properties of semiconductors and has been used to improve the mobility of silicon transistors for several decades. Recently, theoretical studies have predicted that strain can also improve the mobility of two-dimensional (2D) semiconductors, e.g. by reducing intervalley scattering or lowering effective masses. Here, we experimentally show strain-enhanced electron mobility in monolayer MoS2 transistors with uniaxial tensile strain, on flexible substrates. The on-state current and mobility are nearly doubled with tensile strain up to 0.7%, and devices return to their initial state after release of strain. We also show a gate-voltage-dependent gauge factor up to 200 for monolayer MoS2, which is higher than previous values reported for sub-1 nm thin piezoresistive films. These results demonstrate the importance of strain engineering 2D semiconductors for performance enhancements in integrated circuits, or for applications such as flexible strain sensors. △ Less

Submitted 5 October, 2022; v1 submitted 8 May, 2022; originally announced May 2022.

Journal ref: Nano Letters (2022)

Substrate-Dependence of Monolayer MoS$_2$ Thermal Conductivity and Thermal Boundary Conductance

Authors: Alexander J. Gabourie, Cagil Koroglu, Eric Pop

Abstract: The thermal properties of two-dimensional (2D) materials, like MoS$_2$, are known to be affected by interactions with their environment, but this has primarily been studied only with SiO$_2$ substrates. Here, we compare the thermal conductivity (TC) and thermal boundary conductance (TBC) of monolayer MoS$_2$ on amorphous (a-) and crystalline (c-) SiO$_2$, AlN, Al$_2$O$_3$, and $\textit{h}$-BN mono… ▽ More The thermal properties of two-dimensional (2D) materials, like MoS$_2$, are known to be affected by interactions with their environment, but this has primarily been studied only with SiO$_2$ substrates. Here, we compare the thermal conductivity (TC) and thermal boundary conductance (TBC) of monolayer MoS$_2$ on amorphous (a-) and crystalline (c-) SiO$_2$, AlN, Al$_2$O$_3$, and $\textit{h}$-BN monolayers using molecular dynamics. The room temperature TC of MoS$_2$ is ~38 Wm$^{-1}$K$^{-1}$ on amorphous substrates and up to ~68 Wm$^{-1}$K$^{-1}$ on crystalline substrates, with most of the difference due to substrate interactions with long-wavelength MoS$_2$ phonons (< 2 THz). An $\textit{h}$-BN monolayer used as a buffer between MoS$_2$ and the substrate causes the MoS$_2$ TC to increase by up to 50%. Length-dependent calculations reveal TC size effects below ~2 $μみゅー$m and show that the MoS$_2$ TC is size- but not substrate-limited below ~100 nm. We also find that the TBC of MoS$_2$ with c-Al$_2$O$_3$ is over twice that with c-AlN despite a similar MoS$_2$ TC on both, indicating that the TC and TBC could be tuned independently. Finally, we compare the thermal resistance of MoS$_2$ transistors on all substrates to show that MoS$_2$ TBC is the most important parameter for heat removal for long-channel (> 150 nm) devices, while TBC and TC are equally important for short channels. This work provides important insights for electro-thermal applications of 2D materials on various substrates. △ Less

Submitted 24 April, 2022; originally announced April 2022.

Comments: 16 Pages, 6 Figures, Supplementary Information

Journal ref: Journal of Applied Physics 131, 195103 (2022)

Non-equilibrium Phonon Thermal Resistance at MoS2/Oxide and Graphene/Oxide Interfaces

Authors: Weidong Zheng, Connor J. McClellan, Eric Pop, Yee Kan Koh

Abstract: Accurate measurements and physical understanding of thermal boundary resistance (R) of two-dimensional (2D) materials are imperative for effective thermal management of 2D electronics and photonics. In previous studies, heat dissipation from 2D material devices was presumed to be dominated by phonon transport across the interfaces. In this study, we find that in addition to phonon transport, therm… ▽ More Accurate measurements and physical understanding of thermal boundary resistance (R) of two-dimensional (2D) materials are imperative for effective thermal management of 2D electronics and photonics. In previous studies, heat dissipation from 2D material devices was presumed to be dominated by phonon transport across the interfaces. In this study, we find that in addition to phonon transport, thermal resistance between non-equilibrium phonons in the 2D materials could play a critical role too when the 2D material devices are internally self-heated, either optically or electrically. We accurately measure R of oxide/MoS2/oxide and oxide/graphene/oxide interfaces for three oxides (SiO2, HfO2, Al2O3) by differential time-domain thermoreflectance (TDTR). Our measurements of R across these interfaces with external heating are 2-to-4 times lower than previously reported R of the similar interfaces measured by Raman thermometry with internal self-heating. Using a simple model, we show that the observed discrepancy can be explained by an additional internal thermal resistance (Rint) between non-equilibrium phonons present during Raman measurements. We subsequently estimate that for MoS2 and graphene, Rint is about 31 and 22 m2 K/GW, respectively. The values are comparable to the thermal resistance due to finite phonon transmission across interfaces of 2D materials and thus cannot be ignored in the design of 2D material devices. Moreover, the non-equilibrium phonons also lead to a different temperature dependence than that by phonon transport. As such, our work provides important insights into physical understanding of heat dissipation in 2D material devices. △ Less

Submitted 14 April, 2022; originally announced April 2022.

How to Report and Benchmark Emerging Field-Effect Transistors

Authors: Zhihui Cheng, Chin-Sheng Pang, Peiqi Wang, Son T. Le, Yanqing Wu, Davood Shahrjerdi, Iuliana Radu, Max C. Lemme, Lian-Mao Peng, Xiangfeng Duan, Zhihong Chen, Joerg Appenzeller, Steven J. Koester, Eric Pop, Aaron D. Franklin, Curt A. Richter

Abstract: Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of multiple device parameters. More importantly, the interdisciplinarity of this research community results in a lack of consistent reporting and benc… ▽ More Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of multiple device parameters. More importantly, the interdisciplinarity of this research community results in a lack of consistent reporting and benchmarking guidelines. Here we report a consensus among the authors regarding guidelines for reporting and benchmarking important FET parameters and performance metrics. We provide an example of this reporting and benchmarking process for a two-dimensional (2D) semiconductor FET. Our consensus will help promote an improved approach for assessing device performance in emerging FETs, thus aiding the field to progress more consistently and meaningfully. △ Less

Submitted 4 August, 2022; v1 submitted 30 March, 2022; originally announced March 2022.

Comments: 15 pages, 3 figures

Journal ref: Nature Electronics 5 (2022) 416-423

Improved Gradual Resistive Switching Range and 1000x On/Off Ratio in HfOx RRAM Achieved with a $Ge_2Sb_2Te_5$ Thermal Barrier

Authors: Raisul Islam, Shengjun Qin, Sanchit Deshmukh, Zhouchangwan Yu, Cagil Koroglu, Asir Intisar Khan, Kirstin Schauble, Krishna C. Saraswat, Eric Pop, H. -S. Philip Wong

Abstract: Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of $HfO_x$-based conventional RRAM often yields only two stable memory states instead of gradual switching between multiple resistance states. Here, we demonstrate that a thermal barrier of $Ge_2Sb_2Te_5$ (GST) between… ▽ More Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of $HfO_x$-based conventional RRAM often yields only two stable memory states instead of gradual switching between multiple resistance states. Here, we demonstrate that a thermal barrier of $Ge_2Sb_2Te_5$ (GST) between $HfO_x$ and the bottom electrode (TiN) enables wider and weaker filaments, by promoting heat spreading laterally inside the $HfO_x$. Scanning thermal microscopy suggests that $HfO_x+GST$ devices have a wider heating region than control devices with only $HfO_x$, indicating the formation of a wider filament. Such wider filaments can have multiple stable conduction paths, resulting in a memory device with more gradual and linear switching. The thermally-enhanced $HfO_x+GST$ devices also have higher on/off ratio ($>10^3$) than control devices ($<10^2$), and a median set voltage lower by approximately 1 V (~35%), with a corresponding reduction of the switching power. Our $HfO_x+GST$ RRAM shows 2x gradual switching range using fast (~ns) identical pulse trains with amplitude less than 2 V. △ Less

Submitted 23 March, 2022; originally announced March 2022.

Pinpointing the Dominant Component of Contact Resistance to Atomically Thin Semiconductors

Authors: Emanuel Ber, Ryan W. Grady, Eric Pop, Eilam Yalon

Abstract: Achieving good electrical contacts is one of the major challenges in realizing devices based on atomically thin two-dimensional (2D) semiconductors. Several studies have examined this hurdle, but a universal understanding of the contact resistance and an underlying approach to its reduction are currently lacking. In this work we expose the shortcomings of the classical contact resistance model in… ▽ More Achieving good electrical contacts is one of the major challenges in realizing devices based on atomically thin two-dimensional (2D) semiconductors. Several studies have examined this hurdle, but a universal understanding of the contact resistance and an underlying approach to its reduction are currently lacking. In this work we expose the shortcomings of the classical contact resistance model in describing contacts to 2D materials, and offer a correction based on the addition of a lateral pseudo-junction resistance component (Rjun). We use a combination of unique contact resistance measurements to experimentally characterize Rjun for Ni contacts to monolayer MoS2. We find that Rjun is the dominating component of the contact resistance in undoped 2D devices and show that it is responsible for most of the back-gate bias and temperature dependence. Our corrected model and experimental results help understand the underlying physics of state-of-the-art contact engineering approaches in the context of minimizing Rjun. △ Less

Submitted 6 October, 2021; originally announced October 2021.

Journal ref: Adv. Electron. Mater., 2201342, 2023

Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS2

Authors: Alvin Tang, Aravindh Kumar, Marc Jaikissoon, Krishna Saraswat, H. -S. Philip Wong, Eric Pop

Abstract: Two-dimensional (2D) semiconductors have been proposed for heterogeneous integration with existing silicon technology; however, their chemical vapor deposition (CVD) growth temperatures are often too high. Here, we demonstrate direct CVD solid-source precursor synthesis of continuous monolayer (1L) MoS$_2$ films at 560 C in 50 min, within the 450-to-600 C, 2 h thermal budget window required for ba… ▽ More Two-dimensional (2D) semiconductors have been proposed for heterogeneous integration with existing silicon technology; however, their chemical vapor deposition (CVD) growth temperatures are often too high. Here, we demonstrate direct CVD solid-source precursor synthesis of continuous monolayer (1L) MoS$_2$ films at 560 C in 50 min, within the 450-to-600 C, 2 h thermal budget window required for back-end-of-the-line compatibility with modern silicon technology. Transistor measurements reveal on-state current up to ~140 $\mathrm{μみゅーA/μみゅーm}$ at 1 V drain-to-source voltage for 100 nm channel lengths, the highest reported to date for 1L MoS$_2$ grown below 600 C using solid-source precursors. The effective mobility from transfer length method test structures is $\mathrm{29 \pm 5\ cm^2V^{-1}s^{-1}}$ at $\mathrm{6.1 \times 10^{12}\ cm^{-2}}$ electron density, which is comparable to mobilities reported from films grown at higher temperatures. The results of this work provide a path toward the realization of high-quality, thermal-budget-compatible 2D semiconductors for heterogeneous integration with silicon manufacturing. △ Less

Submitted 4 September, 2021; originally announced September 2021.

Journal ref: ACS Appl. Mater. Interfaces 13, 41866 (2021)

Enhanced Meta-Displays Using Advanced Phase-Change Materials

Authors: Omid Hemmatyar, Sajjad Abdollahramezani, Ioannis Zeimpekis, Sergey Lepeshov, Alex Krasnok, Asir Intisar Khan, Kathryn M. Neilson, Christian Teichrib, Tyler Brown, Eric Pop, Daniel W. Hewak, Matthias Wuttig, Andrea Alu, Otto L. Muskens, Ali Adibi

Abstract: Structural colors generated due to light scattering from static all-dielectric metasurfaces have successfully enabled high-resolution, high-saturation, and wide-gamut color printing applications. Despite recent advances, most demonstrations of these structure-dependent colors lack post-fabrication tunability. This hinders their applicability for front-end dynamic display technologies. Phase-change… ▽ More Structural colors generated due to light scattering from static all-dielectric metasurfaces have successfully enabled high-resolution, high-saturation, and wide-gamut color printing applications. Despite recent advances, most demonstrations of these structure-dependent colors lack post-fabrication tunability. This hinders their applicability for front-end dynamic display technologies. Phase-change materials (PCMs), with significant contrast of their optical properties between their amorphous and crystalline states, have demonstrated promising potentials in reconfigurable nanophotonics. Herein, we leverage tunable all-dielectric reflective metasurfaces made of newly emerged classes of low-loss optical PCMs, i.e., antimony trisulphide (Sb$_2$S$_3$) and antimony triselenide (Sb$_2$Se$_3$), with superb characteristics to realize switchable, high-saturation, high-efficiency and high-resolution dynamic meta-pixels. Exploiting polarization-sensitive building blocks, the presented meta-pixel can generate two different colors when illuminated by either one of two orthogonally polarized incident beams. Such degrees of freedom (i.e., material phase and polarization state) enable a single reconfigurable metasurface with fixed geometrical parameters to generate four distinct wide-gamut colors. We experimentally demonstrate, for the first time, an electrically-driven micro-scale display through the integration of phase-change metasurfaces with an on-chip heater formed by transparent conductive oxide. Our experimental findings enable a versatile platform suitable for a wide range of applications, including tunable full-color printing, enhanced dynamic displays, information encryption, and anti-counterfeiting. △ Less

Submitted 19 July, 2021; originally announced July 2021.

Comments: arXiv admin note: substantial text overlap with arXiv:2105.01313

Engineering thermal transport across layered graphene-MoS2 superlattices

Authors: Aditya Sood, Charles Sievers, Yong Cheol Shin, Victoria Chen, Shunda Chen, Kirby K. H. Smithe, Sukti Chatterjee, Davide Donadio, Kenneth E. Goodson, Eric Pop

Abstract: Layering two-dimensional van der Waals materials provides unprecedented control over atomic placement, which could enable tailoring of vibrational spectra and heat flow at the sub-nanometer scale. Here, using spatially-resolved ultrafast thermoreflectance and spectroscopy, we uncover the design rules governing cross-plane heat transport in superlattices assembled from monolayers of graphene (G) an… ▽ More Layering two-dimensional van der Waals materials provides unprecedented control over atomic placement, which could enable tailoring of vibrational spectra and heat flow at the sub-nanometer scale. Here, using spatially-resolved ultrafast thermoreflectance and spectroscopy, we uncover the design rules governing cross-plane heat transport in superlattices assembled from monolayers of graphene (G) and MoS2 (M). Using a combinatorial experimental approach, we probe nine different stacking sequences: G, GG, MG, GGG, GMG, GGMG, GMGG, GMMG, GMGMG and identify the effects of vibrational mismatch, interlayer adhesion, and junction asymmetry on thermal transport. Pure G sequences display signatures of quasi-ballistic transport, whereas adding even a single M layer strongly disrupts heat conduction. The experimental data are described well by molecular dynamics simulations which include thermal expansion, accounting for the effect of finite temperature on the interlayer spacing. The simulations show that a change of only 1.5% in the layer separation can lead to a nearly 100% increase of the thermal resistance. Using these design rules, we experimentally demonstrate a 5-layer GMGMG superlattice with an ultralow effective cross-plane thermal conductivity comparable to air, paving the way for a new class of thermal metamaterials with extreme properties. △ Less

Submitted 22 July, 2021; originally announced July 2021.

Journal ref: ACS Nano (2021)

Lateral Transport and Field-Effect Characteristics of Sputtered P-Type Chalcogenide Thin Films

Authors: Sumaiya Wahid, Alwin Daus, Asir Intisar Khan, Victoria Chen, Kathryn M. Neilson, Mahnaz Islam, Eric Pop

Abstract: Investigating lateral electrical transport in p-type thin film chalcogenides is important to evaluate their potential for field-effect transistors (FETs) and phase-change memory applications. For instance, p-type FETs with sputtered materials at low temperature (<= 250 C) could play a role in flexible electronics or back-end-of-line (BEOL) silicon-compatible processes. Here, we explore lateral tra… ▽ More Investigating lateral electrical transport in p-type thin film chalcogenides is important to evaluate their potential for field-effect transistors (FETs) and phase-change memory applications. For instance, p-type FETs with sputtered materials at low temperature (<= 250 C) could play a role in flexible electronics or back-end-of-line (BEOL) silicon-compatible processes. Here, we explore lateral transport in chalcogenide films (Sb2Te3, Ge2Sb2Te5, Ge4Sb6Te7) and multilayers, with Hall measurements (in <= 50 nm thin films) and with p-type transistors (in <= 5 nm ultrathin films). The highest Hall mobilities are measured for Sb2Te3/GeTe superlattices (~18 cm2/V/s at room temperature), over 2-3x higher than the other films. In ultrathin p-type FETs with Ge2Sb2Te5, we achieve field-effect mobility up to ~5.5 cm2/V/s with current on/off ratio ~10000, the highest for Ge2Sb2Te5 transistors to date. We also explore process optimizations (e.g., AlOx capping layer, type of developer for lithography) and uncover their trade-offs towards the realization of p-type transistors with acceptable mobility and on/off current ratio. Our study provides essential insights into the optimization of electronic devices based on p-type chalcogenides. △ Less

Submitted 17 July, 2021; originally announced July 2021.

Vibrational Properties of a Naturally Occurring Semiconducting van der Waals heterostructure

Authors: V. Z. Costa, Liangbo Liang, Sam Vaziri, Addison Miller, Eric Pop, A. K. M. Newaz

Abstract: We present vibrational properties of Franckeite, which is a naturally occurring van der Waals heterostructure consisting of two different semiconducting layers. Franckeite is a complex layered crystal composed of alternating SnS$_2$ like pseudohexagonal and PbS-like pseudotetragonal layers stacked on top of each other, providing a unique platform to study vibrational properties and thermal transpo… ▽ More We present vibrational properties of Franckeite, which is a naturally occurring van der Waals heterostructure consisting of two different semiconducting layers. Franckeite is a complex layered crystal composed of alternating SnS$_2$ like pseudohexagonal and PbS-like pseudotetragonal layers stacked on top of each other, providing a unique platform to study vibrational properties and thermal transport across layers with mass density and phonon mismatches. By using micro-Raman spectroscopy and first-principles Raman simulations, we found that the PbS-like pseudotetragonal structure is mostly composed of Pb$_3$SbS$_4$. We also discovered several low-frequency Raman modes that originate from the intralayer vibrations of the pseudotetragonal layer. Using density functional theory, we determined all vibrational patterns of Franckeite, whose signatures are observed in the Raman spectrum. By studying temperature dependent Raman spectroscopy (300 K - 500 K), we have found different temperature coefficients for both pseudotetragonal and pseudohexagonal layers. We believe that our study will help understand the vibration modes of its complex heterostructure and the thermal properties at the nanoscale. △ Less

Submitted 15 July, 2021; originally announced July 2021.

Comments: 15 pages, 10 figures

High-Specific-Power Flexible Transition Metal Dichalcogenide Solar Cells

Authors: Koosha Nassiri Nazif, Alwin Daus, Jiho Hong, Nayeun Lee, Sam Vaziri, Aravindh Kumar, Frederick Nitta, Michelle Chen, Siavash Kananian, Raisul Islam, Kwan-Ho Kim, Jin-Hong Park, Ada Poon, Mark L. Brongersma, Eric Pop, Krishna C. Saraswat

Abstract: Semiconducting transition metal dichalcogenides (TMDs) are promising for flexible high-specific-power photovoltaics due to their ultrahigh optical absorption coefficients, desirable band gaps and self-passivated surfaces. However, challenges such as Fermi-level pinning at the metal contact-TMD interface and the inapplicability of traditional doping schemes have prevented most TMD solar cells from… ▽ More Semiconducting transition metal dichalcogenides (TMDs) are promising for flexible high-specific-power photovoltaics due to their ultrahigh optical absorption coefficients, desirable band gaps and self-passivated surfaces. However, challenges such as Fermi-level pinning at the metal contact-TMD interface and the inapplicability of traditional doping schemes have prevented most TMD solar cells from exceeding 2% power conversion efficiency (PCE). In addition, fabrication on flexible substrates tends to contaminate or damage TMD interfaces, further reducing performance. Here, we address these fundamental issues by employing: 1) transparent graphene contacts to mitigate Fermi-level pinning, 2) $\rm{MoO}_\it{x}$ capping for doping, passivation and anti-reflection, and 3) a clean, non-damaging direct transfer method to realize devices on lightweight flexible polyimide substrates. These lead to record PCE of 5.1% and record specific power of $\rm{4.4\ W\,g^{-1}}$ for flexible TMD ($\rm{WSe_2}$) solar cells, the latter on par with prevailing thin-film solar technologies cadmium telluride, copper indium gallium selenide, amorphous silicon and III-Vs. We further project that TMD solar cells could achieve specific power up to $\rm{46\ W\,g^{-1}}$, creating unprecedented opportunities in a broad range of industries from aerospace to wearable and implantable electronics. △ Less

Submitted 24 June, 2021; v1 submitted 19 June, 2021; originally announced June 2021.

Comments: 39 pages; v2: some references reformatted

Journal ref: Nature Communications 12, 7034 (2021)

Improving Electric Contacts to Two-Dimensional Semiconductors

Authors: Saurabh V. Suryavanshi, Blanka Magyari-Kope, Paul Lim, Connor McClellan, Kirby K. H. Smithe, Chris D. English, Eric Pop

Abstract: Electrical contact resistance to two-dimensional (2D) semiconductors such as monolayer MoS_{2} is a key bottleneck in scaling the 2D field effect transistors (FETs). The 2D semiconductor in contact with three-dimensional metal creates unique current crowding that leads to increased contact resistance. We developed a model to separate the contribution of the current crowding from the intrinsic cont… ▽ More Electrical contact resistance to two-dimensional (2D) semiconductors such as monolayer MoS_{2} is a key bottleneck in scaling the 2D field effect transistors (FETs). The 2D semiconductor in contact with three-dimensional metal creates unique current crowding that leads to increased contact resistance. We developed a model to separate the contribution of the current crowding from the intrinsic contact resistivity. We show that current crowding can be alleviated by doping and contact patterning. Using Landauer-Büttiker formalism, we show that van der Waals (vdW) gap at the interface will ultimately limit the electrical contact resistance. We compare our models with experimental data for doped and undoped MoS_{2} FETs. Even with heavy charge-transfer doping of > 2x10^{13} cm^{-2}, we show that the state-of-the-art contact resistance is 100 times larger than the ballistic limit. Our study highlights the need to develop efficient interface to achieve contact resistance of < 10 Ωおーむ.μみゅーm, which will be ideal for extremely scaled devices. △ Less

Submitted 22 May, 2021; originally announced May 2021.

Scaling Theory of Two-Dimensional Field Effect Transistors

Authors: Saurabh V. Suryavanshi, Chris D. English, H. -S. P. Wong, Eric Pop

Abstract: We present a scaling theory of two-dimensional (2D) field effect transistors (FETs). For devices with channel thickness less than 4 nm, the device electrostatics is dominated by the physical gate oxide thickness and not the effective oxide thickness. Specifically, for symmetric double gate (DG) FETs the scale length (Λらむだ) varies linearly with the gate oxide thickness(t_{ox}) as Λらむだ ~ 3/4t_{ox}. The ga… ▽ More We present a scaling theory of two-dimensional (2D) field effect transistors (FETs). For devices with channel thickness less than 4 nm, the device electrostatics is dominated by the physical gate oxide thickness and not the effective oxide thickness. Specifically, for symmetric double gate (DG) FETs the scale length (Λらむだ) varies linearly with the gate oxide thickness(t_{ox}) as Λらむだ ~ 3/4t_{ox}. The gate oxide dielectric permittivity and the semiconductor channel thickness do not affect the device electrostatics for such device geometries. For an asymmetric device such as single gate (SG) FETs, the fringing fields have a second order effect on the scale length. However, like symmetric DG FETs, the scale length in asymmetric FETs is also ultimately limited by the physical gate oxide thickness. We compare our theoretical predictions for scaled monolayer MoS2 DG FETs. △ Less

Submitted 22 May, 2021; originally announced May 2021.

Uncovering Phase Change Memory Energy Limits by Sub-Nanosecond Probing of Power Dissipation Dynamics

Authors: Keren Stern, Nicolás Wainstein, Yair Keller, Christopher M. Neumann, Eric Pop, Shahar Kvatinsky, Eilam Yalon

Abstract: Phase change memory (PCM) is one of the leading candidates for neuromorphic hardware and has recently matured as a storage class memory. Yet, energy and power consumption remain key challenges for this technology because part of the PCM device must be self-heated to its melting temperature during reset. Here, we show that this reset energy can be reduced by nearly two orders of magnitude by minimi… ▽ More Phase change memory (PCM) is one of the leading candidates for neuromorphic hardware and has recently matured as a storage class memory. Yet, energy and power consumption remain key challenges for this technology because part of the PCM device must be self-heated to its melting temperature during reset. Here, we show that this reset energy can be reduced by nearly two orders of magnitude by minimizing the pulse width. We utilize a high-speed measurement setup to probe the energy consumption in PCM cells with varying pulse width (0.3 to 40 nanoseconds) and uncover the power dissipation dynamics. A key finding is that the switching power (P) remains unchanged for pulses wider than a short thermal time constant of the PCM ($τたう$$_t$$_h$ < 1 ns in 50 nm diameter device), resulting in a decrease of energy (E=P$τたう$) as the pulse width $τたう$ is reduced in that range. In other words, thermal confinement during short pulses is achieved by limiting the heat diffusion time. Our improved programming scheme reduces reset energy density below 0.1 nJ/$μみゅー$m$^2$, over an order of magnitude lower than state-of-the-art PCM, potentially changing the roadmap of future data storage technology and paving the way towards energy-efficient neuromorphic hardware △ Less

Submitted 2 May, 2021; v1 submitted 23 April, 2021; originally announced April 2021.

Journal ref: Adv. Electron. Mater. 7, 2100217 (2021)

Electrically driven programmable phase-change meta-switch reaching 80% efficiency

Authors: Sajjad Abdollahramezani, Omid Hemmatyar, Mohammad Taghinejad, Hossein Taghinejad, Alex Krasnok, Ali A. Eftekhar, Christian Teichrib, Sanchit Deshmukh, Mostafa El-Sayed, Eric Pop, Matthias Wuttig, Andrea Alu, Wenshan Cai, Ali Adibi

Abstract: Despite recent advances in active metaoptics, wide dynamic range combined with high-speed reconfigurable solutions is still elusive. Phase-change materials (PCMs) offer a compelling platform for metasurface optical elements, owing to the large index contrast and fast yet stable phase transition properties. Here, we experimentally demonstrate an in situ electrically-driven reprogrammable metasurfac… ▽ More Despite recent advances in active metaoptics, wide dynamic range combined with high-speed reconfigurable solutions is still elusive. Phase-change materials (PCMs) offer a compelling platform for metasurface optical elements, owing to the large index contrast and fast yet stable phase transition properties. Here, we experimentally demonstrate an in situ electrically-driven reprogrammable metasurface by harnessing the unique properties of a phase-change chalcogenide alloy, Ge$_{2}$Sb$_{2}$Te$_{5}$ (GST), in order to realize fast, non-volatile, reversible, multilevel, and pronounced optical modulation in the near-infrared spectral range. Co-optimized through a multiphysics analysis, we integrate an efficient heterostructure resistive microheater that indirectly heats and transforms the embedded GST film without compromising the optical performance of the metasurface even after several reversible phase transitions. A hybrid plasmonic-PCM meta-switch with a record electrical modulation of the reflectance over eleven-fold (an absolute reflectance contrast reaching 80%), unprecedented quasi-continuous spectral tuning over 250 nm, and switching speed that can potentially reach a few kHzきろへるつ is presented. Our work represents a significant step towards the development of fully integrable dynamic metasurfaces and their potential for beamforming applications. △ Less

Submitted 26 April, 2021; v1 submitted 21 April, 2021; originally announced April 2021.

Uncovering Thermal and Electrical Properties of Sb2Te3/GeTe Superlattice Films

Authors: Heungdong Kwon, Asir Intisar Khan, Christopher Perez, Mehdi Asheghi, Eric Pop, Kenneth E. Goodson

Abstract: Superlattice-like phase change memory (SL-PCM) promises lower switching current than conventional PCM based on Ge2Sb2Te5 (GST). However, a fundamental understanding of SL-PCM requires detailed characterization of the interfaces within such a SL. Here, we explore the electrical and thermal transport of SLs with deposited Sb2Te3 and GeTe alternating layers of various thicknesses. We find up to ~4X r… ▽ More Superlattice-like phase change memory (SL-PCM) promises lower switching current than conventional PCM based on Ge2Sb2Te5 (GST). However, a fundamental understanding of SL-PCM requires detailed characterization of the interfaces within such a SL. Here, we explore the electrical and thermal transport of SLs with deposited Sb2Te3 and GeTe alternating layers of various thicknesses. We find up to ~4X reduction of the effective cross-plane thermal conductivity of the SL stack (as-deposited polycrystalline) compared to polycrystalline GST (as-deposited amorphous and later annealed) due to the thermal interface resistances within the SL. Thermal measurements with varying periods of our SLs show a signature of phonon coherence with a transition from wave-like to particle-like phonon transport, further described by our modeling. Electrical resistivity measurements of such SLs reveal strong anisotropy (~2000X) between the in-plane and cross-plane directions due to the weakly interacting van der Waals gaps. This work uncovers electro-thermal transport in SLs based on Sb2Te3 and GeTe, for improved design of low-power PCM. △ Less

Submitted 23 July, 2021; v1 submitted 4 March, 2021; originally announced March 2021.

Journal ref: Nano Letters (2021)

Spectral Decomposition of Thermal Conductivity: Comparing Velocity Decomposition Methods in Homogeneous Molecular Dynamics Simulations

Authors: Alexander J. Gabourie, Zheyong Fan, Tapio Ala-Nissila, Eric Pop

Abstract: The design of new applications, especially those based on heterogeneous integration, must rely on detailed knowledge of material properties, such as thermal conductivity (TC). To this end, multiple methods have been developed to study TC as a function of vibrational frequency. Here, we compare three spectral TC methods based on velocity decomposition in homogenous molecular dynamics simulations: G… ▽ More The design of new applications, especially those based on heterogeneous integration, must rely on detailed knowledge of material properties, such as thermal conductivity (TC). To this end, multiple methods have been developed to study TC as a function of vibrational frequency. Here, we compare three spectral TC methods based on velocity decomposition in homogenous molecular dynamics simulations: Green-Kubo modal analysis (GKMA), the spectral heat current (SHC) method, and a method we propose called homogeneous nonequilibrium modal analysis (HNEMA). First, we derive a convenient per-atom virial expression for systems described by general many-body potentials, enabling compact representations of the heat current, each velocity decomposition method, and other related quantities. Next, we evaluate each method by calculating the spectral TC for carbon nanotubes, graphene, and silicon. We show that each method qualitatively agrees except at optical phonon frequencies, where a combination of mismatched eigenvectors and a large density of states produces artificial TC peaks for modal analysis methods. Our calculations also show that the HNEMA and SHC methods converge much faster than the GKMA method, with the SHC method being the most computationally efficient. Finally, we demonstrate that our single-GPU modal analysis implementation in GPUMD (Graphics Processing Units Molecular Dynamics) is over 1000 times faster than the existing LAMMPS (Large-scale Atomic/Molecular Massively Parallel Simulator) implementation on one CPU. △ Less

Submitted 6 February, 2021; originally announced February 2021.

Comments: 19 Pages, 8 Figures

Journal ref: Phys. Rev. B 103, 205421 (2021)

Field-effect at electrical contacts to two-dimensional materials

Authors: Yan Sun, Alvin Tang, Ching-Hua Wang, Yanqing Zhao, Mengmeng Bai, Shuting Xu, Zheqi Xu, Tao Tang, Sheng Wang, Chenguang Qiu, Kang Xu, Xubiao Peng, Junfeng Han, Eric Pop, Yang Chai, Yao Guo

Abstract: The inferior electrical contact to two-dimensional (2D) materials is a critical challenge for their application in post-silicon very large-scale integrated circuits. Electrical contacts were generally related to their resistive effect, quantified as contact resistance. With a systematic investigation, this work demonstrates a capacitive metal-insulator-semiconductor (MIS) field-effect at the elect… ▽ More The inferior electrical contact to two-dimensional (2D) materials is a critical challenge for their application in post-silicon very large-scale integrated circuits. Electrical contacts were generally related to their resistive effect, quantified as contact resistance. With a systematic investigation, this work demonstrates a capacitive metal-insulator-semiconductor (MIS) field-effect at the electrical contacts to 2D materials: the field-effect depletes or accumulates charge carriers, redistributes the voltage potential, and give rise to abnormal current saturation and nonlinearity. On the one hand, the current saturation hinders the devices' driving ability, which can be eliminated with carefully engineered contact configurations. On the other hand, by introducing the nonlinearity to monolithic analog artificial neural network circuits, the circuits' perception ability can be significantly enhanced, as evidenced using a COVID-19 critical illness prediction model. This work provides a comprehension of the field-effect at the electrical contacts to 2D materials, which is fundamental to the design, simulation, and fabrication of electronics based on 2D material. △ Less

Submitted 23 January, 2021; originally announced January 2021.

High Current Density in Monolayer MoS$_2$ Doped by AlO$_x$

Authors: Connor J. McClellan, Eilam Yalon, Kirby K. H. Smithe, Saurabh V. Suryavanshi, Eric Pop

Abstract: Semiconductors require stable doping for applications in transistors, optoelectronics, and thermoelectrics. However, this has been challenging for two-dimensional (2D) materials, where existing approaches are either incompatible with conventional semiconductor processing or introduce time-dependent, hysteretic behavior. Here we show that low temperature (< 200$^\circ$ C) sub-stoichiometric AlO… ▽ More Semiconductors require stable doping for applications in transistors, optoelectronics, and thermoelectrics. However, this has been challenging for two-dimensional (2D) materials, where existing approaches are either incompatible with conventional semiconductor processing or introduce time-dependent, hysteretic behavior. Here we show that low temperature (< 200$^\circ$ C) sub-stoichiometric AlO$_x$ provides a stable n-doping layer for monolayer MoS$_2$, compatible with circuit integration. This approach achieves carrier densities > 2x10$^{13}$ 1/cm$^2$, sheet resistance as low as ~7 kOhm/sq, and good contact resistance ~480 Ohm.um in transistors from monolayer MoS$_2$ grown by chemical vapor deposition. We also reach record current density of nearly 700 uA/um (>110 MA/cm$^2$) in this three-atom-thick semiconductor while preserving transistor on/off current ratio > $10^6$. The maximum current is ultimately limited by self-heating and could exceed 1 mA/um with better device heat sinking. With their 0.1 nA/um off-current, such doped MoS$_2$ devices approach several low-power transistor metrics required by the international technology roadmap △ Less

Submitted 30 December, 2020; originally announced December 2020.

Comments: To appear in ACS Nano (2021)

Journal ref: ACS Nano 15, 1587-1596 (2021)

Size scaling, dynamics, and electro-thermal bifurcation of VO2 Mott oscillators

Authors: Stephanie M. Bohaichuk, Suhas Kumar, Miguel Muñoz Rojo, R. Stanley Williams, Mahnaz Islam, Gregory Pitner, Jaewoo Jeong, Mahesh G. Samant, Stuart S. P. Parkin, Eric Pop

Abstract: Traditional electronic devices are well-known to improve in speed and energy-efficiency as their dimensions are reduced to the nanoscale. However, this scaling behavior remains unclear for nonlinear dynamical circuit elements, such as Mott neuron-like spiking oscillators, which are of interest for bio-inspired computing. Here we show that shrinking micrometer-sized VO2 oscillators to sub-100 nm ef… ▽ More Traditional electronic devices are well-known to improve in speed and energy-efficiency as their dimensions are reduced to the nanoscale. However, this scaling behavior remains unclear for nonlinear dynamical circuit elements, such as Mott neuron-like spiking oscillators, which are of interest for bio-inspired computing. Here we show that shrinking micrometer-sized VO2 oscillators to sub-100 nm effective sizes, achieved using a nanogap cut in a metallic carbon nanotube (CNT) electrode, does not guarantee faster spiking. However, an additional heat source such as Joule heating from the CNT, in combination with small size and heat capacity (defined by the narrow volume of VO2 whose insulator-metal transition is triggered by the CNT), can increase the spiking frequency by ~1000x due to an electro-thermal bifurcation in the nonlinear dynamics. These results demonstrate that nonlinear dynamical switches operate in a complex phase space which can be controlled by careful electro-thermal design, offering new tuning parameters for designing future biomimetic electronics. △ Less

Submitted 14 December, 2020; originally announced December 2020.

Application-Driven Synthesis and Characterization of Hexagonal Boron Nitride on Metal and Carbon Nanotube Substrates

Authors: Victoria Chen, Yong Cheol Shin, Evgeny Mikheev, Joel Martis, Ze Zhang, Sukti Chatterjee, Arun Majumdar, David Goldhaber-Gordon, Eric Pop

Abstract: Hexagonal boron nitride (h-BN) is unique among two-dimensional materials, with a large band gap (~6 eV) and high thermal conductivity (>400 W/m/K), second only to diamond among electrical insulators. Most electronic studies to date have relied on h-BN exfoliated from bulk crystals; however, for scalable applications the material must be synthesized by methods such as chemical vapor deposition (CVD… ▽ More Hexagonal boron nitride (h-BN) is unique among two-dimensional materials, with a large band gap (~6 eV) and high thermal conductivity (>400 W/m/K), second only to diamond among electrical insulators. Most electronic studies to date have relied on h-BN exfoliated from bulk crystals; however, for scalable applications the material must be synthesized by methods such as chemical vapor deposition (CVD). Here, we demonstrate single- and few-layer h-BN synthesized by CVD on single crystal platinum and on carbon nanotube (CNT) substrates, also comparing these films with h-BN deposited on the more commonly used polycrystalline Pt and Cu growth substrates. The h-BN film grown on single crystal Pt has a lower surface roughness and is more spatially homogeneous than the film from a polycrystalline Pt foil, and our electrochemical transfer process allows for these expensive foils to be reused with no measurable degradation. In addition, we demonstrate monolayer h-BN as an ultrathin, 3.33 $\unicode{x212B}$ barrier protecting MoS2 from damage at high temperatures and discuss other applications that take advantage of the conformal h-BN deposition on various substrates demonstrated in this work. △ Less

Submitted 29 November, 2020; originally announced November 2020.

Journal ref: 2D Materials 8, 045024 (2021)

Graphene-Based Electromechanical Thermal Switches

Authors: Michelle E. Chen, Miguel Muñoz Rojo, Feifei Lian, Justin Koeln, Aditya Sood, Stephanie M. Bohaichuk, Christopher M. Neumann, Sarah G. Garrow, Andrew G. Alleyne, Kenneth E. Goodson, Eric Pop

Abstract: Thermal management is an important challenge in modern electronics, avionics, automotive, and energy storage systems. While passive thermal solutions (like heat sinks or heat spreaders) are often used, actively modulating heat flow (e.g. via thermal switches or diodes) would offer additional degrees of control over the management of thermal transients and system reliability. Here we report the fir… ▽ More Thermal management is an important challenge in modern electronics, avionics, automotive, and energy storage systems. While passive thermal solutions (like heat sinks or heat spreaders) are often used, actively modulating heat flow (e.g. via thermal switches or diodes) would offer additional degrees of control over the management of thermal transients and system reliability. Here we report the first thermal switch based on a flexible, collapsible graphene membrane, with low operating voltage, < 2 V. We also employ active-mode scanning thermal microscopy (SThM) to measure the device behavior and switching in real time. A compact analytical thermal model is developed for the general case of a thermal switch based on a double-clamped suspended membrane, highlighting the thermal and electrical design challenges. System-level modeling demonstrates the thermal trade-offs between modulating temperature swing and average temperature as a function of switching ratio. These graphene-based thermal switches present new opportunities for active control of fast (even nanosecond) thermal transients in densely integrated systems. △ Less

Submitted 21 November, 2020; originally announced November 2020.

High-Performance Flexible Nanoscale Field-Effect Transistors Based on Transition Metal Dichalcogenides

Authors: Alwin Daus, Sam Vaziri, Victoria Chen, Cagil Koroglu, Ryan W. Grady, Connor S. Bailey, Hye Ryoung Lee, Kevin Brenner, Kirstin Schauble, Eric Pop

Abstract: Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are good candidates for high-performance flexible electronics. However, most demonstrations of such flexible field-effect transistors (FETs) to date have been on the micron scale, not benefitting from the short-channel advantages of 2D-TMDs. Here, we demonstrate flexible monolayer MoS2 FETs with the shortest channels repor… ▽ More Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are good candidates for high-performance flexible electronics. However, most demonstrations of such flexible field-effect transistors (FETs) to date have been on the micron scale, not benefitting from the short-channel advantages of 2D-TMDs. Here, we demonstrate flexible monolayer MoS2 FETs with the shortest channels reported to date (down to 50 nm) and remarkably high on-current (up to 470 uA/um at 1 V drain-to-source voltage) which is comparable to flexible graphene or crystalline silicon FETs. This is achieved using a new transfer method wherein contacts are initially patterned on the rigid TMD growth substrate with nanoscale lithography, then coated with a polyimide (PI) film which becomes the flexible substrate after release, with the contacts and TMD. We also apply this transfer process to other TMDs, reporting the first flexible FETs with MoSe2 and record on-current for flexible WSe2 FETs. These achievements push 2D semiconductors closer to a technology for low-power and high-performance flexible electronics. △ Less

Submitted 5 February, 2021; v1 submitted 8 September, 2020; originally announced September 2020.

Journal ref: Nature Electronics (2021)

Ultrahigh Doping of Graphene Using Flame-Deposited MoO3

Authors: Sam Vaziri, Victoria Chen, Lili Cai, Yue Jiang, Michelle Chen, Ryan Grady, Xiaolin Zheng, Eric Pop

Abstract: The expected high performance of graphene-based electronics is often hindered by lack of adequate doping, which causes low carrier density and large sheet resistance. Many reported graphene doping schemes also suffer from instability or incompatibility with existing semiconductor processing. Here we report ultrahigh and stable p-type doping up to ~7x10^13 1/cm^2 (~2x10^21 1/cm^3}) of monolayer gra… ▽ More The expected high performance of graphene-based electronics is often hindered by lack of adequate doping, which causes low carrier density and large sheet resistance. Many reported graphene doping schemes also suffer from instability or incompatibility with existing semiconductor processing. Here we report ultrahigh and stable p-type doping up to ~7x10^13 1/cm^2 (~2x10^21 1/cm^3}) of monolayer graphene grown by chemical vapor deposition. This is achieved by direct polycrystalline MoO3 growth on graphene using a rapid flame synthesis technique. With this approach, the metal-graphene contact resistance for holes is reduced to ~200 Ohm-um. We also demonstrate that flame-deposited MoO3 provides over 5x higher doping of graphene, as well as superior thermal and long-term stability, compared to electron-beam deposited MoO3. △ Less

Submitted 15 August, 2020; originally announced August 2020.

Comments: 4 pages, 3 figures

Journal ref: IEEE Electron Device Letters, vol. 41, no. 10, pp. 1592-1595, 2020

Dynamic hybrid metasurfaces

Authors: Sajjad Abdollahramezani, Omid Hemmatyar, Mohammad Taghinejad, Hossein Taghinejad, Yashar Kiarashinejad, Mohammadreza Zandehshahvar, Tianren Fan, Sanchit Deshmukh, Ali A. Eftekhar, Wenshan Cai, Eric Pop, Mostafa El-Sayed, Ali Adibi

Abstract: Efficient hybrid plasmonic-photonic metasurfaces that simultaneously take advantage of the potential of both pure metallic and all-dielectric nanoantennas are identified as an emerging technology in flat optics. Nevertheless, post-fabrication tunable hybrid metasurfaces are still elusive. Here, we present a reconfigurable hybrid metasurface platform by incorporating the phase-change material Ge… ▽ More Efficient hybrid plasmonic-photonic metasurfaces that simultaneously take advantage of the potential of both pure metallic and all-dielectric nanoantennas are identified as an emerging technology in flat optics. Nevertheless, post-fabrication tunable hybrid metasurfaces are still elusive. Here, we present a reconfigurable hybrid metasurface platform by incorporating the phase-change material Ge$_{2}$Sb$_{2}$Te$_{5}$ (GST) into metal-dielectric meta-atoms for active and non-volatile tuning of properties of light. We systematically design a reduced-dimension meta-atom, which selectively controls the fundamental hybrid plasmonic-photonic resonances of the metasurface via the dynamic change of optical constants of GST without compromising the scattering efficiency. As a proof-of-concept, we experimentally demonstrate miniaturized tunable metasurfaces that control the amplitude and phase of incident light necessary for high-contrast optical switching and anomalous to specular beam deflection, respectively. Finally, we leverage a deep learning-based approach to present an intuitive low-dimensional visualization of the enhanced range of response reconfiguration enabled by the addition of GST. Our findings further substantiate dynamically tunable hybrid metasurfaces as promising candidates for the development of small-footprint energy harvesting, imaging, and optical signal processing devices. △ Less

Submitted 10 August, 2020; originally announced August 2020.

Journal ref: Nano Letters (2021)

Uncovering the Effects of Metal Contacts on Monolayer MoS2

Authors: Kirstin Schauble, Dante Zakhidov, Eilam Yalon, Sanchit Deshmukh, Ryan W. Grady, Kayla A. Cooley, Connor J. McClellan, Sam Vaziri, Donata Passarello, Suzanne E. Mohney, Michael F. Toney, A. K. Sood, Alberto Salleo, Eric Pop

Abstract: Metal contacts are a key limiter to the electronic performance of two-dimensional (2D) semiconductor devices. Here we present a comprehensive study of contact interfaces between seven metals (Y, Sc, Ag, Al, Ti, Au, Ni, with work functions from 3.1 to 5.2 eV) and monolayer MoS2 grown by chemical vapor deposition. We evaporate thin metal films onto MoS2 and study the interfaces by Raman spectroscopy… ▽ More Metal contacts are a key limiter to the electronic performance of two-dimensional (2D) semiconductor devices. Here we present a comprehensive study of contact interfaces between seven metals (Y, Sc, Ag, Al, Ti, Au, Ni, with work functions from 3.1 to 5.2 eV) and monolayer MoS2 grown by chemical vapor deposition. We evaporate thin metal films onto MoS2 and study the interfaces by Raman spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction, transmission electron microscopy, and electrical characterization. We uncover that, 1) ultrathin oxidized Al dopes MoS2 n-type (> 2x10^12 1/cm^2) without degrading its mobility, 2) Ag, Au, and Ni deposition causes varying levels of damage to MoS2 (broadening Raman E' peak from <3 1/cm to >6 1/cm), and 3) Ti, Sc, and Y react with MoS2. Reactive metals must be avoided in contacts to monolayer MoS2, but control studies reveal the reaction is mostly limited to the top layer of multilayer films. Finally, we find that 4) thin metals do not significantly strain MoS2, as confirmed by X-ray diffraction. These are important findings for metal contacts to MoS2, and broadly applicable to many other 2D semiconductors. △ Less

Submitted 28 July, 2020; originally announced July 2020.

Journal ref: ACS Nano 14, 14798-14808 (2020)

Reduced Thermal Conductivity of Supported and Encased Monolayer and Bilayer MoS$_2$

Authors: Alexander J. Gabourie, Saurabh V. Suryavanshi, Amir Barati Farimani, Eric Pop

Abstract: Electrical and thermal properties of atomically thin two-dimensional (2D) materials are affected by their environment, e.g. through remote phonon scattering or dielectric screening. However, while it is known that mobility and thermal conductivity (TC) of graphene are reduced on a substrate, these effects are much less explored in 2D semiconductors such as MoS$_2$. Here, we use molecular dynamics… ▽ More Electrical and thermal properties of atomically thin two-dimensional (2D) materials are affected by their environment, e.g. through remote phonon scattering or dielectric screening. However, while it is known that mobility and thermal conductivity (TC) of graphene are reduced on a substrate, these effects are much less explored in 2D semiconductors such as MoS$_2$. Here, we use molecular dynamics to understand TC changes in monolayer (1L) and bilayer (2L) MoS$_2$ by comparing suspended, supported, and encased structures. The TC of monolayer MoS$_2$ is reduced from ~117 Wm$^{-1}$K$^{-1}$ when suspended, to ~31 Wm$^{-1}$K$^{-1}$ when supported by SiO$_2$, at 300 K. Encasing 1L MoS$_2$ in SiO$_2$ further reduces its TC down to ~22 Wm$^{-1}$K$^{-1}$. In contrast, the TC of 2L MoS$_2$ is not as drastically reduced, being >50% higher than 1L both when supported and encased. These effects are due to phonon scattering with remote vibrational modes of the substrate, which are partly screened in 2L MoS$_2$. We also examine the TC of 1L MoS$_2$ across a wide range of temperatures (300 to 700 K) and defect densities (up to 5$\times$10$^{13}$ cm$^{-2}$), finding that the substrate reduces the dependence of TC on these factors. Taken together, these are important findings for all applications which will use 2D semiconductors supported or encased by insulators, instead of freely suspended. △ Less

Submitted 9 July, 2020; originally announced July 2020.

Comments: 19 Pages, 7 Figures, Supplementary Information

Nonvolatile electrically reconfigurable integrated photonic switch

Authors: Jiajiu Zheng, Zhuoran Fang, Changming Wu, Shifeng Zhu, Peipeng Xu, Jonathan K. Doylend, Sanchit Deshmukh, Eric Pop, Scott Dunham, Mo Li, Arka Majumdar

Abstract: Reconfigurability of photonic integrated circuits (PICs) has become increasingly important due to the growing demands for electronic-photonic systems on a chip driven by emerging applications, including neuromorphic computing, quantum information, and microwave photonics. Success in these fields usually requires highly scalable photonic switching units as essential building blocks. Current photoni… ▽ More Reconfigurability of photonic integrated circuits (PICs) has become increasingly important due to the growing demands for electronic-photonic systems on a chip driven by emerging applications, including neuromorphic computing, quantum information, and microwave photonics. Success in these fields usually requires highly scalable photonic switching units as essential building blocks. Current photonic switches, however, mainly rely on materials with weak, volatile thermo-optic or electro-optic modulation effects, resulting in a large footprint and high energy consumption. As a promising alternative, chalcogenide phase-change materials (PCMs) exhibit strong modulation in a static, self-holding fashion. Here, we demonstrate nonvolatile electrically reconfigurable photonic switches using PCM-clad silicon waveguides and microring resonators that are intrinsically compact and energy-efficient. With phase transitions actuated by in-situ silicon PIN heaters, near-zero additional loss and reversible switching with high endurance are obtained in a complementary metal-oxide-semiconductor (CMOS)-compatible process. Our work can potentially enable very large-scale general-purpose programmable integrated photonic processors. △ Less

Submitted 10 December, 2019; originally announced December 2019.

Layer Dependent Interfacial Transport and Optoelectrical Properties of MoS2 on Ultra-flat Metals

Authors: Hao Lee, S. Deshmukh, Jing Wen, V. Z. Costa, J. S. Schuder, M. Sanchez, A. S. Ichimura, Eric Pop, Bin Wang, A. K. M. Newaz

Abstract: Transition metal dichalcogenides (TMDs) are layered semiconducting van der Waal crystals and promising materials for a wide range of electronic and optoelectronic devices. Realizing practical electrical and optoelectronic device applications requires a connection between a metal junction and a TMD semiconductor. Hence, a complete understanding of electronic band alignments and the potential barrie… ▽ More Transition metal dichalcogenides (TMDs) are layered semiconducting van der Waal crystals and promising materials for a wide range of electronic and optoelectronic devices. Realizing practical electrical and optoelectronic device applications requires a connection between a metal junction and a TMD semiconductor. Hence, a complete understanding of electronic band alignments and the potential barrier heights governing the transport through a metal-TMD-metal junction is critical. But, there is a knowledge gap; it is not clear how the energy bands of a TMD align while in contact with a metal as a function of the number of layers. In pursuit of removing this knowledge gap, we have performed conductive atomic force microscopy (CAFM) of few layered (1-5) MoS2 immobilized on ultra-flat conducting Au surfaces (root mean square (RMS) surface roughness <0.2 nm) and indium tin oxide (ITO) substrate (RMS surface roughness <0.7 nm) forming a vertical metal (conductive-AFM tip)-semiconductor-metal device. We have observed that the current increases as the number of layers increases up to 5 layers. By applying Fowler-Nordheim tunneling theory, we have determined the barrier heights for different layers and observed that the barrier height decreases as the number of layers increases. Using density functional theory (DFT) calculation, we successfully demonstrated that the barrier height decreases as the layer number increases. By illuminating the TMDs on a transparent ultra-flat conducting ITO substrate, we observed a reduction in current when compared to the current measured in the dark, hence demonstrating negative photoconductivity. Our study provides a fundamental understanding of the local electronic and optoelectronic behaviors of TMD-metal junction, and may pave an avenue toward developing nanoscale electronic devices with tailored layer-dependent transport properties. △ Less

Submitted 1 August, 2019; originally announced August 2019.

Comments: 11 pages, 5 figures

Journal ref: ACS Applied Materials and Interfaces (2019)

Localized Triggering of the Insulator-Metal Transition in VO2 using a Single Carbon Nanotube

Authors: Stephanie M. Bohaichuk, Miguel Muñoz Rojo, Gregory Pitner, Connor J. McClellan, Feifei Lian, Jason Li, Jaewoo Jeong, Mahesh G. Samant, Stuart S. P. Parkin, H. -S. Philip Wong, Eric Pop

Abstract: Vanadium dioxide (VO2) has been widely studied for its rich physics and potential applications, undergoing a prominent insulator-metal transition (IMT) near room temperature. The transition mechanism remains highly debated, and little is known about the IMT at nanoscale dimensions. To shed light on this problem, here we use ~1 nm wide carbon nanotube (CNT) heaters to trigger the IMT in VO2. Single… ▽ More Vanadium dioxide (VO2) has been widely studied for its rich physics and potential applications, undergoing a prominent insulator-metal transition (IMT) near room temperature. The transition mechanism remains highly debated, and little is known about the IMT at nanoscale dimensions. To shed light on this problem, here we use ~1 nm wide carbon nanotube (CNT) heaters to trigger the IMT in VO2. Single metallic CNTs switch the adjacent VO2 at less than half the voltage and power required by control devices without a CNT, with switching power as low as ~85 $μみゅーW$ at 300 nm device lengths. We also obtain potential and temperature maps of devices during operation using Kelvin Probe Microscopy (KPM) and Scanning Thermal Microscopy (SThM). Comparing these with three-dimensional electrothermal simulations, we find that the local heating of the VO2 by the CNT play a key role in the IMT. These results demonstrate the ability to trigger IMT in VO2 using nanoscale heaters, and highlight the significance of thermal engineering to improve device behaviour. △ Less

Submitted 5 July, 2019; originally announced July 2019.

Journal ref: ACS Nano (2019)

Contact Engineering High Performance n-Type MoTe2 Transistors

Authors: Michal J. Mleczko, Andrew C. Yu, Christopher M. Smyth, Victoria Chen, Yong Cheol Shin, Sukti Chatterjee, Yi-Chia Tsai, Yoshio Nishi, Robert M. Wallace, Eric Pop

Abstract: Semiconducting MoTe2 is one of the few two-dimensional (2D) materials with a moderate band gap, similar to silicon. However, this material remains under-explored for 2D electronics due to ambient instability and predominantly p-type Fermi level pinning at contacts. Here, we demonstrate unipolar n-type MoTe2 transistors with the highest performance to date, including high saturation current (>400… ▽ More Semiconducting MoTe2 is one of the few two-dimensional (2D) materials with a moderate band gap, similar to silicon. However, this material remains under-explored for 2D electronics due to ambient instability and predominantly p-type Fermi level pinning at contacts. Here, we demonstrate unipolar n-type MoTe2 transistors with the highest performance to date, including high saturation current (>400 $μみゅーA/μみゅーm$ at 80 K and >200 $μみゅーA/μみゅーm$ at 300 K) and relatively low contact resistance (1.2 to 2 $kΩおめが\cdotμみゅーm$ from 80 to 300 K), achieved with Ag contacts and AlOx encapsulation. We also investigate other contact metals, extracting their Schottky barrier heights using an analytic subthreshold model. High-resolution X-ray photoelectron spectroscopy reveals that interfacial metal-Te compounds dominate the contact resistance. Among the metals studied, Sc has the lowest work function but is the most reactive, which we counter by inserting monolayer h-BN between MoTe2 and Sc. These metal-insulator-semiconductor (MIS) contacts partly de-pin the metal Fermi level and lead to the smallest Schottky barrier for electron injection. Overall, this work improves our understanding of n-type contacts to 2D materials, an important advance for low-power electronics. △ Less

Submitted 4 July, 2019; originally announced July 2019.

Journal ref: Nano Letters (2019)

Strongly Tunable Anisotropic Thermal Transport in MoS2 by Strain and Lithium Intercalation: First--Principles Calculations

Authors: Shunda Chen, Aditya Sood, Eric Pop, Kenneth E. Goodson, Davide Donadio

Abstract: The possibility of tuning the vibrational properties and the thermal conductivity of layered van der Waals materials either chemically or mechanically paves the way to significant advances in nanoscale heat management. Using first-principles calculations we investigate the modulation of heat transport in MoS2 by lithium intercalation and cross-plane strain. We find that both the in-plane and cross… ▽ More The possibility of tuning the vibrational properties and the thermal conductivity of layered van der Waals materials either chemically or mechanically paves the way to significant advances in nanoscale heat management. Using first-principles calculations we investigate the modulation of heat transport in MoS2 by lithium intercalation and cross-plane strain. We find that both the in-plane and cross-plane thermal conductivity (kr, kz) of MoS2 are extremely sensitive to both strain and electrochemical intercalation. Combining lithium intercalation and strain, the in-plane and cross-plane thermal conductivity can be tuned over one and two orders of magnitude, respectively. Furthermore, since kr and kz respond in different ways to intercalation and strain, the thermal conductivity anisotropy can be modulated by two orders of magnitude. The underlying mechanisms for such large tunability of the anisotropic thermal conductivity of \Mos are explored by computing and analyzing the dispersion relations, group velocities, relaxation times and mean free paths of phonons. Since both intercalation and strain can be applied reversibly, their stark effect on thermal conductivity can be exploited to design novel phononic devices, as well as for thermal management in MoS2-based electronic and optoelectronic systems. △ Less

Submitted 14 May, 2019; originally announced May 2019.

Journal ref: 2D Materials, 6, 025033 (2019)

Thermal conductivity of crystalline AlN and the influence of atomic-scale defects

Authors: Runjie Lily Xu, Miguel Munoz Rojo, S. M. Islam, Aditya Sood, Bozo Vareskic, Ankita Katre, Natalio Mingo, Kenneth E. Goodson, Huili Grace Xing, Debdeep Jena, Eric Pop

Abstract: Aluminum nitride (AlN) plays a key role in modern power electronics and deep-ultraviolet photonics, where an understanding of its thermal properties is essential. Here we measure the thermal conductivity of crystalline AlN by the 3$ωおめが$ method, finding it ranges from 674 ${\pm}$ 56 W/m/K at 100 K to 186 ${\pm}$ 7 W/m/K at 400 K, with a value of 237 ${\pm}$ 6 W/m/K at room temperature. We compare the… ▽ More Aluminum nitride (AlN) plays a key role in modern power electronics and deep-ultraviolet photonics, where an understanding of its thermal properties is essential. Here we measure the thermal conductivity of crystalline AlN by the 3$ωおめが$ method, finding it ranges from 674 ${\pm}$ 56 W/m/K at 100 K to 186 ${\pm}$ 7 W/m/K at 400 K, with a value of 237 ${\pm}$ 6 W/m/K at room temperature. We compare these data with analytical models and first principles calculations, taking into account atomic-scale defects (O, Si, C impurities, and Al vacancies). We find Al vacancies play the greatest role in reducing thermal conductivity because of the largest mass-difference scattering. Modeling also reveals that 10% of heat conduction is contributed by phonons with long mean free paths, over ~7 $μみゅー$m at room temperature, and 50% by phonons with MFPs over ~0.3 $μみゅー$m. Consequently, the effective thermal conductivity of AlN is strongly reduced in sub-micron thin films or devices due to phonon-boundary scattering. △ Less

Submitted 8 December, 2019; v1 submitted 31 March, 2019; originally announced April 2019.

Journal ref: J. Appl. Phys. 126, 185105 (2019)

Fast Spiking of a Mott VO2-Carbon Nanotube Composite Device

Authors: Stephanie M. Bohaichuk, Suhas Kumar, Greg Pitner, Connor J. McClellan, Jaewoo Jeong, Mahesh G. Samant, H-. S. Philip Wong, Stuart S. P. Parkin, R. Stanley Williams, Eric Pop

Abstract: The recent surge of interest in brain-inspired computing and power-efficient electronics has dramatically bolstered development of computation and communication using neuron-like spiking signals. Devices that can produce rapid and energy-efficient spiking could significantly advance these applications. Here we demonstrate DC-current or voltage-driven periodic spiking with sub-20 ns pulse widths fr… ▽ More The recent surge of interest in brain-inspired computing and power-efficient electronics has dramatically bolstered development of computation and communication using neuron-like spiking signals. Devices that can produce rapid and energy-efficient spiking could significantly advance these applications. Here we demonstrate DC-current or voltage-driven periodic spiking with sub-20 ns pulse widths from a single device composed of a thin VO2 film with a metallic carbon nanotube as a nanoscale heater. Compared with VO2-only devices, adding the nanotube heater dramatically decreases the transient duration and pulse energy, and increases the spiking frequency, by up to three orders of magnitude. This is caused by heating and cooling of the VO2 across its insulator-metal transition being localized to a nanoscale conduction channel in an otherwise bulk medium. This result provides an important component of energy-efficient neuromorphic computing systems, and a lithography-free technique for power-scaling of electronic devices that operate via bulk mechanisms. △ Less

Submitted 7 March, 2019; originally announced March 2019.