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Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes
Authors:
Yilin Wang,
Kefeng Wang,
Janice Reutt-Robey,
Johnpierre Paglione,
Michael S. Fuhrer
Abstract:
We present a detailed study of magnetoresistance \r{ho}xx(H), Hall effect \r{ho}xy(H), and electrolyte gating effect in thin (<100 nm) exfoliated crystals of WTe2. We observe quantum oscillations in H of both \r{ho}xx(H) and \r{ho}xy(H), and identify four oscillation frequencies consistent with previous reports in thick crystals. \r{ho}xy(H) is linear in H at low H consistent with near-perfect ele…
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We present a detailed study of magnetoresistance \r{ho}xx(H), Hall effect \r{ho}xy(H), and electrolyte gating effect in thin (<100 nm) exfoliated crystals of WTe2. We observe quantum oscillations in H of both \r{ho}xx(H) and \r{ho}xy(H), and identify four oscillation frequencies consistent with previous reports in thick crystals. \r{ho}xy(H) is linear in H at low H consistent with near-perfect electron-hole compensation, however becomes nonlinear and changes sign with increasing H, implying a breakdown of compensation. A field-dependent ratio of carrier concentrations p/n can consistently explain \r{ho}xx(H) and \r{ho}xy(H) within a two-fluid model. We also employ an electrolytic gate to highly electron-dope WTe2 with Li. The non-saturating \r{ho}xx(H) persists to H = 14 T with magnetoresistance ratio exceeding 2 x 104 %, even with significant deviation from perfect electron-hole compensation (p/n = 0.84), where the two-fluid model predicts a saturating \r{ho}xx(H). Our results suggest electron-hole compensation is not the mechanism for extremely large magnetoresistance in WTe2, other alternative explanations need to be considered.
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Submitted 11 September, 2015;
originally announced September 2015.
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Electronic transport properties of Ir-decorated graphene
Authors:
Yilin Wang,
Shudong Xiao,
Xinghan Cai,
Wenzhong Bao,
Janice Reutt-Robey,
Michael S. Fuhrer
Abstract:
Graphene decorated with 5d transitional metal atoms is predicted to exhibit many intriguing properties; for example iridium adatoms are proposed to induce a substantial topological gap in graphene. We extensively investigated the conductivity of single-layer graphene decorated with iridium deposited in ultra-high vacuum at low temperature (7 K) as a function of Ir concentration, carrier density, t…
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Graphene decorated with 5d transitional metal atoms is predicted to exhibit many intriguing properties; for example iridium adatoms are proposed to induce a substantial topological gap in graphene. We extensively investigated the conductivity of single-layer graphene decorated with iridium deposited in ultra-high vacuum at low temperature (7 K) as a function of Ir concentration, carrier density, temperature, and annealing conditions. Our results are consistent with the formation of Ir clusters of ~100 atoms at low temperature, with each cluster donating a single electronic charge to graphene. Annealing graphene increases the cluster size, reducing the doping and increasing the mobility. We do not observe any sign of an energy gap induced by spin-orbit coupling, possibly due to the clustering of Ir.
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Submitted 9 July, 2015;
originally announced July 2015.
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Neutral-current Hall effects in disordered graphene
Authors:
Yilin Wang,
Xinghan Cai,
Janice Reutt-Robey,
Michael S. Fuhrer
Abstract:
A non-local Hall bar geometry is used to detect neutral-current Hall effects in graphene on silicon dioxide. Disorder is tuned by the addition of Au or Ir adatoms in ultra-high vacuum. A reproducible neutral-current Hall effect is found in both as-fabricated and adatom-decorated graphene. The Hall angle exhibits a complex but reproducible dependence on gate voltage and disorder, and notably breaks…
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A non-local Hall bar geometry is used to detect neutral-current Hall effects in graphene on silicon dioxide. Disorder is tuned by the addition of Au or Ir adatoms in ultra-high vacuum. A reproducible neutral-current Hall effect is found in both as-fabricated and adatom-decorated graphene. The Hall angle exhibits a complex but reproducible dependence on gate voltage and disorder, and notably breaks electron-hole symmetry. An exponential dependence on length between Hall and inverse-Hall probes indicates a neutral current relaxation length of approximately 300 nm. The short relaxation length and lack of precession in parallel magnetic field suggest that the neutral currents are valley currents. The near lack of temperature dependence from 7-300 K is unprecedented and promising for using controlled disorder for room temperature neutral-current electronics.
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Submitted 22 April, 2015;
originally announced April 2015.
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Dynamic interfaces in an organic thin film
Authors:
Chenggang Tao,
Qiang Liu,
Blake C. Riddick,
William G. Cullen,
Janice Reutt-Robey,
John D. Weeks,
Ellen D. Williams
Abstract:
Low-dimensional boundaries between phases and domains in organic thin films are important in charge transport and recombination. Here, fluctuations of interfacial boundaries in an organic thin film, acridine-9-carboxylic acid (ACA) on Ag(111), have been visualized in real time, and measured quantitatively, using Scanning Tunneling Microscopy. The boundaries fluctuate via molecular exchange with…
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Low-dimensional boundaries between phases and domains in organic thin films are important in charge transport and recombination. Here, fluctuations of interfacial boundaries in an organic thin film, acridine-9-carboxylic acid (ACA) on Ag(111), have been visualized in real time, and measured quantitatively, using Scanning Tunneling Microscopy. The boundaries fluctuate via molecular exchange with exchange time constants of 10-30 ms at room temperature, yielding length mode fluctuations that should yield characteristic f-1/2 signatures for frequencies less than ~100 Hz. Although ACA has highly anisotropic intermolecular interactions, it forms islands that are compact in shape with crystallographically distinct boundaries that have essentially identical thermodynamic and kinetic properties . The physical basis of the modified symmetry is shown to arise from significantly different substrate interactions induced by alternating orientations of successive molecules in the condensed phase. Incorporating this additional set of interactions in a lattice gas model leads to effective multi-component behavior, as in the Blume-Emery-Griffiths (BEG) model, and can straightforwardly reproduce the experimentally observed isotropic behavior. The general multi-component description allows the domain shapes and boundary fluctuations to be tuned from isotropic to highly anisotropic in terms of the balance between intermolecular interactions and molecule-substrate interactions. Key words: Organic thin film, fluctuations, STM, molecular interactions, diffusion kinetics, phase coexistence
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Submitted 12 November, 2008;
originally announced November 2008.
