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2D hydrodynamic simulation of TeraFETs beyond the gradual-channel approximation for transient, large-signal or ultrahigh-frequency simulations
Authors:
Florian Ludwig,
Hartmut G. Roskos,
Raul Borsche
Abstract:
In the past decade, detection of THz radiation by plasma-wave-assisted frequency mixing in antenna-coupled field-effect transistors (TeraFETs) -- implemented in various semiconductor material systems (Si CMOS, GaN/AlGaN, GaAs/AlGaAs, graphene, etc.) -- has matured and led to a practically applied detector technology. This has been supported by the development of powerful device simulation tools wh…
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In the past decade, detection of THz radiation by plasma-wave-assisted frequency mixing in antenna-coupled field-effect transistors (TeraFETs) -- implemented in various semiconductor material systems (Si CMOS, GaN/AlGaN, GaAs/AlGaAs, graphene, etc.) -- has matured and led to a practically applied detector technology. This has been supported by the development of powerful device simulation tools which take into account relevant collective carrier dynamics and mixing processes in various approximations. These tools mostly model carrier transport in 1D and they are usually geared towards continuous-wave illumination of the device and small-signal response. Depending on their implementation, it may not be possible readily to simulate large-signal and pulsed operation. Another approximation which may lead to unsatisfactory results is the 1D restriction to calculate only the longitudinal electric field components. Especially at the edges of the gate electrode, solving of the 2D Poisson equation promises better results. This contribution introduces a stable way to solve the 2D Poisson equation self-consistently with the hydrodynamic transport equations including the numerically challenging convection term. We employ a well-balanced approximate Harten-Lax-van-Leer-Contact Riemann solver. The approach is well suited for a future treatment of transient and large-signal cases as well as the Dyakonov-Shur instability. The 2D treatment also generically extends the model beyond the gradual-channel approximation and allows to calculate the FET's response at high THz frequencies where the gate-to-channel potential acquires a non-local character. Model calculations are performed for the exemplary case of a 65-nm Si CMOS TeraFET in the isothermal approximation.
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Submitted 29 May, 2024;
originally announced May 2024.
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Hybrid Multi-Head Physics-informed Neural Network for Depth Estimation in Terahertz Imaging
Authors:
Mingjun Xiang,
Hui Yuan,
Kai Zhou,
Hartmut G. Roskos
Abstract:
Terahertz (THz) imaging is one of the hotspots in the field of optics, where the depth information retrieval is a key factor to restore the three-dimensional appearance of objects. Impressive results for depth extraction in visible and infrared wave range have been demonstrated through deep learning (DL). Among them, most DL methods are merely data-driven, lacking relevant physical priors, which t…
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Terahertz (THz) imaging is one of the hotspots in the field of optics, where the depth information retrieval is a key factor to restore the three-dimensional appearance of objects. Impressive results for depth extraction in visible and infrared wave range have been demonstrated through deep learning (DL). Among them, most DL methods are merely data-driven, lacking relevant physical priors, which thus request for a large amount of experimental data to train the DL models.However, large training data acquirement in the THz domain is challenging due to the requirements of environmental and system stability, as well as the time-consuming data acquisition process. To overcome this limitation, this paper incorporates a complete physical model representing the THz image formation process into traditional DL networks to retrieve the depth information of objects. The most significant advantage is the ability to use it without pre-training, thereby eliminating the need for tens of thousands of labeled data. Through experiments validation, we demonstrate that by providing diffraction patterns of planar objects with their upper and lower halves individually masked, the proposed physics-informed neural network (NN) can automatically optimize and, ultimately, reconstruct the depth of the object through interaction between the NN and a physical model. The obtained results represent the initial steps towards achieving fast holographic THz imaging using reference-free beams and low-cost power detection.
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Submitted 7 July, 2024; v1 submitted 28 May, 2024;
originally announced May 2024.
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Si Superstrate Lenses on Patch-Antenna-Coupled TeraFETs: NEP Optimization and Frequency Fine-Tuning
Authors:
Anastasiya Krysl,
Dmytro B. But,
Kęstutis Ikamas,
Jakob Holstein,
Anna Shevchik-Shekera,
Hartmut G. Roskos,
Alvydas Lisauskas
Abstract:
This paper presents a study on performance optimization and resonant frequency modification of terahertz detectors by the use of hyper-hemispherical silicon superstrate lenses. The detectors are patch-TeraFETs, i.e., field-effect transistors with monolithically integrated patch antennas fabricated with a commercial 65-nm CMOS foundry process and designed for an operation frequency of 580 GHz. We d…
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This paper presents a study on performance optimization and resonant frequency modification of terahertz detectors by the use of hyper-hemispherical silicon superstrate lenses. The detectors are patch-TeraFETs, i.e., field-effect transistors with monolithically integrated patch antennas fabricated with a commercial 65-nm CMOS foundry process and designed for an operation frequency of 580 GHz. We demonstrate a strong improvement of the optical noise-equivalent power optical NEP, referenced against the total radiation power) reaching a value of 16 pW/Hz^(1/2). We show, furthermore, that the resonance frequency can be efficiently fine-tuned by the choice of the material and the thickness of a dielectric layer placed between the transistor and the superstrate lens. The resonance frequency can be shifted by more than 15 % of the center frequency (up to 100 GHz for the 580 GHz devices). The design of the on-chip optics can be employed for post-fabrication tailoring of the detector's resonance frequency to target specific spectral positions.
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Submitted 11 April, 2024;
originally announced April 2024.
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High-power even- and odd mode emission from linear arrays of resonant-tunneling-diode (RTD) oscillators in the 0.4- to 0.8-THz frequency range
Authors:
Fanqi Meng,
Zhenling Tang,
Petr Ourednik,
Jahnabi Hazarika,
Michael Feiginov,
Safumi Suzuki,
Hartmut G. Roskos
Abstract:
Resonant tunneling diode (RTD) oscillators possess the highest oscillation frequency among all electronic THz emitters. However, the emitted power from RTDs remains limited. Here, we propose linear RTD-oscillator arrays capable of supporting coherent emission from both odd and even coupled modes. Both modes exhibit constructive interference in the far field, enabling high power emission. Experimen…
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Resonant tunneling diode (RTD) oscillators possess the highest oscillation frequency among all electronic THz emitters. However, the emitted power from RTDs remains limited. Here, we propose linear RTD-oscillator arrays capable of supporting coherent emission from both odd and even coupled modes. Both modes exhibit constructive interference in the far field, enabling high power emission. Experimental demonstrations of coherent emission from 11-RTD-oscillator linear arrays are presented. The odd mode oscillates at approximately 450 GHz, emitting about 0.5 mW, while the even mode oscillates at around 750 GHz, emitting about 1 mW. Moreover, certain RTD-oscillator arrays demonstrate dual-band oscillation under different biases, allowing for controllable switching between two coupled modes. In addition, during bias sweeping in both directions, a notable hysteresis feature is observed in the switching bias for the odd and even modes. Our linear RTD-oscillator array represents a significant step forward in the realization of high-power large RTD-oscillator arrays and enables large-scale applications of RTD devices.
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Submitted 10 April, 2024;
originally announced April 2024.
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8x8 Patch-Antenna-Coupled TeraFET Detector Array for Terahertz Quantum-Cascade-Laser Applications
Authors:
Jakob Holstein,
Nicholas K. North,
Michael D. Horbury,
Sanchit Kondawar,
Imon Kundu,
Mohammed Salih,
Anastasiya Krysl,
Lianhe Li,
Edmund H. Linfield,
Joshua R. Freeman,
Alexander Valavanis,
Alvydas Lisauskas,
Hartmut G. Roskos
Abstract:
Monolithically integrated, antenna-coupled field-effect transistors (TeraFETs) are rapid and sensitive detectors for the terahertz range (0.3-10~THz) that can operate at room temperature. We conducted experimental characterizations of a single patch-antenna coupled TeraFET optimized for 3.4~THz operation and its integration into an 8x8 multi-element detector configuration. In this configuration, t…
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Monolithically integrated, antenna-coupled field-effect transistors (TeraFETs) are rapid and sensitive detectors for the terahertz range (0.3-10~THz) that can operate at room temperature. We conducted experimental characterizations of a single patch-antenna coupled TeraFET optimized for 3.4~THz operation and its integration into an 8x8 multi-element detector configuration. In this configuration, the entire TeraFET array operates as a unified detector element, combining the output signals of all detector elements. Both detectors were realized using a mature commercial Si-CMOS 65-nm process node. Our experimental characterization employed single-mode Quantum-Cascade Lasers (QCLs) emitting at 2.85~THz and 3.4~THz. The 8x8 multi-element detector yields two major improvements for sensitive power detection experiments. First, the larger detector area simplifies alignment and enhances signal stability. Second, the reduced detector impedance enabled the implementation of a TeraFET+QCL system capable of providing a -3~dB modulation bandwidth up to 21~MHz, which is currently limited primarily by the chosen readout circuitry. Finally, we validate the system's performance by providing high resolution gas spectroscopy data for methanol vapor around 3.4~THz, where a detection limit of 1.6e-5 absorbance, or 2.6e11~molecules/cm^3 was estimated under optimal coupling conditions.
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Submitted 5 August, 2024; v1 submitted 10 April, 2024;
originally announced April 2024.
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Modeling of antenna-coupled Si MOSFETs in the Terahertz Frequency Range
Authors:
Florian Ludwig,
Jakob Holstein,
Anastasiya Krysl,
Alvydas Lisauskas,
Hartmut G. Roskos
Abstract:
We report on the modeling and experimental characterization of Si CMOS detectors of terahertz radiation based on antenna-coupled field-effect transistors (TeraFETs). The detectors are manufactured using TSMC's 65-nm technology. We apply two models -- the TSMC RF foundry model and our own ADS-HDM -- to simulate the Si CMOS TeraFET performance and compare their predictions with respective experiment…
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We report on the modeling and experimental characterization of Si CMOS detectors of terahertz radiation based on antenna-coupled field-effect transistors (TeraFETs). The detectors are manufactured using TSMC's 65-nm technology. We apply two models -- the TSMC RF foundry model and our own ADS-HDM -- to simulate the Si CMOS TeraFET performance and compare their predictions with respective experimental data. Both models are implemented in the commercial circuit simulation software Keysight Advanced Design System (ADS). We find that the compact model TSMC RF is capable to predict the detector responsivity and its dependence on frequency and gate voltage with good accuracy up to the highest frequency of 1.2 THz covered in this study. This frequency is well beyond the tool's intended operation range for 5G communications and 110-GHz millimeter wave applications. We demonstrate that our self-developed physics-based ADS-HDM tool, which relies on an extended one-dimensional hydrodynamic transport model and can be adapted readily to other material technologies, has high predictive qualities comparable to those of the foundry model. We use the ADS-HDM to discuss the contribution of diffusive and plasmonic effects to the THz response of Si CMOS TeraFETs, finding that these effects, while becoming more significant with rising frequency, are never dominant. Finally, we estimate that the electrical NEP (perfect power coupling conditions) is on the order of 5 pW/$\sqrt{\rm{Hz}}$ at room-temperature.
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Submitted 11 April, 2024; v1 submitted 10 April, 2024;
originally announced April 2024.
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Room-Temperature Plasmon-Assisted Resonant THz Detection in Single-layer Graphene Transistors
Authors:
José M. Caridad,
Óscar Castelló,
Sofía M. López Baptista,
Takashi Taniguchi,
Kenji Watanabe,
Hartmut G. Roskos,
Juan A. Delgado-Notario
Abstract:
Frequency-selective or even frequency-tunable Terahertz (THz) photodevices are critical components for many technological applications that require nanoscale manipulation, control and confinement of light. Within this context, gate-tunable phototransistors based on plasmonic resonances are often regarded as the most promising devices for frequency-selective detection of THz fields. The exploitatio…
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Frequency-selective or even frequency-tunable Terahertz (THz) photodevices are critical components for many technological applications that require nanoscale manipulation, control and confinement of light. Within this context, gate-tunable phototransistors based on plasmonic resonances are often regarded as the most promising devices for frequency-selective detection of THz fields. The exploitation of constructive interference of plasma waves in such detectors not only promises frequency selectivity, but also a pronounced sensitivity enhancement at the target frequencies. However, clear signatures of plasmon-assisted resonances in THz detectors have been only revealed at cryogenic temperatures so far, and remain unobserved at application-relevant room-temperature conditions. In this work, we demonstrate the sought-after room-temperature resonant detection of THz radiation in short-channel gated photodetectors made from high-quality single-layer graphene. The survival of this intriguing resonant regime at room-temperature ultimately relies on the weak intrinsic electron-phonon scattering in graphene, which avoids the damping of the plasma oscillations.
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Submitted 8 January, 2024;
originally announced January 2024.
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Interdigitated Terahertz Metamaterial Sensors: Design with the Dielectric Perturbation Theory
Authors:
Lei Cao,
Fanqi Meng,
Esra Özdemir,
Yannik Loth,
Merle Richter,
Anna Katharina Wigger,
Maira Pérez Sosa,
Alaa Jabbar Jumaah,
Shihab Al-Daffaie,
Peter Haring Bolívar,
Hartmut G. Roskos
Abstract:
Designing terahertz sensors with high sensitivity to detect nanoscale thin films and single biomolecule presents a significant challenge, and addressing these obstacles is crucial for unlocking their full potential in scientific research and advanced applications. This work presents a strategy for the design optimization of metamaterial sensors employed in the detection of small amounts of dielect…
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Designing terahertz sensors with high sensitivity to detect nanoscale thin films and single biomolecule presents a significant challenge, and addressing these obstacles is crucial for unlocking their full potential in scientific research and advanced applications. This work presents a strategy for the design optimization of metamaterial sensors employed in the detection of small amounts of dielectric materials. The sensors usually utilize the shift of the resonance frequency as an indicator of the presence of the analyte. The amount of shifting depends on intrinsic properties (electric field distribution, quality factor, and mode volume) of the bare cavity, as well as the overlap volume of its high-electric-field zone(s) and the analyte. Guided by the simplified dielectric perturbation theory, interdigitated electric split-ring resonators (ID-eSRR) are devised to significantly enhance the detection sensitivity for thin-film analytes compared to eSRRs without interdigitated fingers in the SRR gap region. The fingers of the ID-eSRR metamaterial sensor redistribute the electric field, creating strongly localized field enhancements that substantially boost the interaction with the analyte. Additionally, the periodic change of the orientation of the inherent anti-phase electric field in the interdigitated structure reduces radiation loss, leading to a higher Q-factor. Experiments with e-beam-fabricated ID-eSRR sensors operating at around 300 GHz demonstrate a remarkable frequency shift of 33.5 GHz upon deposition of a SiO2 layer with a thickness of 150 nm as an analyte simulant. The figure of merit (FOM) improves by over 50 times compared to structures without interdigitated fingers. This rational design option opens a promising avenue for highly sensitive detection of thin films and trace biomolecules.
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Submitted 24 November, 2023;
originally announced November 2023.
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Terahertz detection with graphene FETs: photothermoelectric and resistive self-mixing contributions to the detector response
Authors:
Florian Ludwig,
Andrey Generalov,
Jakob Holstein,
Anton Murros,
Klaara Viisanen,
Mika Prunnila,
Hartmut G. Roskos
Abstract:
Field-effect transistors coupled to integrated antennas (TeraFETs) are photodetectors being actively developed for the THz frequency range ($\sim$ 100 GHz - 10 THz). Among them, Graphene TeraFETs (G-TeraFETs) have demonstrated distinctive photoresponse features compared to those made from elementary semiconductors. For instance, previous studies have shown that G-TeraFETs exhibit a THz response th…
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Field-effect transistors coupled to integrated antennas (TeraFETs) are photodetectors being actively developed for the THz frequency range ($\sim$ 100 GHz - 10 THz). Among them, Graphene TeraFETs (G-TeraFETs) have demonstrated distinctive photoresponse features compared to those made from elementary semiconductors. For instance, previous studies have shown that G-TeraFETs exhibit a THz response that comprises two components: the resistive self-mixing (RSM) and photothermoelectric effect (PTE). The RSM and PTE arise from carrier density oscillations and carrier heating, respectively. In this work, we confirm that the photoresponse can be considered a combination of RSM and PTE, with PTE being the dominant rectification mechanism at higher frequencies. For our CVD G-TeraFETs with asymmetric antenna coupling, the PTE response dominates over the RSM at frequencies above 100 GHz. We find that relative contribution of RSM and PTE to the photoresponse is strongly frequency dependent. Electromagnetic wave simulations show that this behavior is due to the relative change in the total dissipated power between the gated and ungated channel regions of the G-TeraFET as the frequency increases. The simulations also indicate that the channel length over which the PTE contributes to the photoresponse below the gate electrode is approximately the same as the electronic cooling length. Finally, we identify a PTE contribution that can be attributed to the contact doping effect in graphene close to the metal contacts. Our detectors achieve a minimum optical noise-equivalent power of 101 (114) pW/$\sqrt{Hz}$ for asymmetric (symmetric) THz antenna coupling conditions at 400 GHz. This work demonstrates how the PTE response can be used to optimize the THz responsivity of G-TeraFETs.
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Submitted 28 March, 2024; v1 submitted 21 November, 2023;
originally announced November 2023.
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Ultrafast gap dynamics upon photodoping the Mott-insulating phase of a two-dimensional organic charge-transfer salt
Authors:
Konstantin Warawa,
Yassine Agarmani,
Harald Schubert,
Martin Dressel,
Michael Lang,
Hartmut G. Roskos,
Mark D. Thomson
Abstract:
We investigate experimentally the ultrafast changes in the spectral response of the Mott insulator $κ$-(BEDT-TTF)$_2$Cu[N(CN)$_2$]Cl ($κ$-Cl) upon photodoping with intense excitation at 1.6 eV and probing with continuum pulses simultaneously covering both the terahertz and infrared (IR) ranges (from 0 to 0.6 eV). A quantitative analysis of the differential reflectivity using a multi-band Lorentzia…
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We investigate experimentally the ultrafast changes in the spectral response of the Mott insulator $κ$-(BEDT-TTF)$_2$Cu[N(CN)$_2$]Cl ($κ$-Cl) upon photodoping with intense excitation at 1.6 eV and probing with continuum pulses simultaneously covering both the terahertz and infrared (IR) ranges (from 0 to 0.6 eV). A quantitative analysis of the differential reflectivity using a multi-band Lorentzian model provide absolute changes in spectral weights and objective global time constants for the relaxation vs. temperature. The transient conductivity spectra deduced from the analysis suggest that the transient photoinduced spectral weight is dominated by a progressive closure of the Mott gap with increasing excitation density, i.e. due to changes in the inter-Hubbard-band absorption by the remaining singly occupied states. We critically examine this scenario compared to that proposed previously, whereby the low-energy spectral weight is attributed to a Drude-like response of photoexcited doublons/holons. We also consider the observed slowing down of the relaxation rate with increasing excitation density, and temperature dependence of the initial doublon/holon density in terms of the phonon-mediated gap recombination model.
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Submitted 28 October, 2023;
originally announced October 2023.
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Strong coupling of plasmonic bright and dark modes with two eigenmodes of a photonic crystal cavity
Authors:
Fanqi Meng,
Lei Cao,
Aristeidis Karalis,
Hantian Gu,
Mark D. Thomson,
Hartmut G. Roskos
Abstract:
Dark modes represent a class of forbidden transitions or transitions with weak dipole moments between energy states. Due to their low transition probability, it is difficult to realize their interaction with light, let alone achieve the strong interaction of the modes with the photons in a cavity. However, by mutual coupling with a bright mode, the strong interaction of dark modes with photons is…
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Dark modes represent a class of forbidden transitions or transitions with weak dipole moments between energy states. Due to their low transition probability, it is difficult to realize their interaction with light, let alone achieve the strong interaction of the modes with the photons in a cavity. However, by mutual coupling with a bright mode, the strong interaction of dark modes with photons is possible. This type of mediated interaction is widely investigated in the metamaterials community and is known under the term electromagnetically induced transparency (EIT). Here, we report strong coupling between a plasmonic dark mode of an EIT-like metamaterial with the photons of a 1D photonic crystal cavity in the terahertz frequency range. The coupling between the dark mode and the cavity photons is mediated by a plasmonic bright mode, which is proven by the observation of a frequency splitting which depends on the strength of the inductive interaction between the plasmon bright and dark modes of the EIT-like metamaterial. In addition, since the plasmonic dark mode strongly couples with the cavity dark mode, we observes four polariton modes. The frequency splitting by interaction of the four modes (plasmonic bright and dark mode and the two eigenmodes of the photonic cavity) can be reproduced in the framework of a model of four coupled harmonic oscillators.
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Submitted 22 June, 2023;
originally announced June 2023.
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600-GHz Fourier Imaging Based on Heterodyne Detection at the 2nd Sub-harmonic
Authors:
Hui Yuan,
Alvydas Lisauskas,
Mark D. Thomson,
Hartmut G. Roskos
Abstract:
Fourier imaging is an indirect imaging method which records the diffraction pattern of the object scene coherently in the focal plane of the imaging system and reconstructs the image using computational resources. The spatial resolution, which can be reached, depends on one hand on the wavelength of the radiation, but also on the capability to measure - in the focal plane - Fourier components with…
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Fourier imaging is an indirect imaging method which records the diffraction pattern of the object scene coherently in the focal plane of the imaging system and reconstructs the image using computational resources. The spatial resolution, which can be reached, depends on one hand on the wavelength of the radiation, but also on the capability to measure - in the focal plane - Fourier components with high spatial wave-vectors. This leads to a conflicting situation at THz frequencies, because choosing a shorter wavelength for better resolution usually comes at the cost of less radiation power, concomitant with a loss of dynamic range, which limits the detection of higher Fourier components. Here, aiming at maintaining a high dynamic range and limiting the system costs, we adopt heterodyne detection at the 2nd sub-harmonic, working with continuous-wave (CW) radiation for object illumination at 600 GHz and local-oscillator (LO) radiation at 300 GHz. The detector is a single-pixel broad-band Si CMOS TeraFET equipped with substrate lenses on both the front- and backside for separate in-coupling of the waves. The entire scene is illuminated by the object wave, and the Fourier spectrum is recorded by raster scanning of the single detector unit through the focal plane. With only 56 uW of power of the 600-GHz radiation, a dynamic range of 60 dB is reached, sufficient to detect the entire accessible Fourier space spectrum in the test measurements. A lateral spatial resolution of better than 0.5 mm, at the diffraction limit, is reached.
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Submitted 2 June, 2023;
originally announced June 2023.
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Collective modes in the charge-density wave state of K$_{0.3}$MoO$_3$: The role of long-range Coulomb interactions revisited
Authors:
Max O. Hansen,
Yash Palan,
Viktor Hahn,
Mark D. Thomson,
Konstantin Warawa,
Hartmut G. Roskos,
Jure Demsar,
Falko Pientka,
Oleksandr Tsyplyatyev,
Peter Kopietz
Abstract:
We re-examine the effect of long-range Coulomb interactions on the collective amplitude and phase modes in the incommensurate charge-density-wave ground state of quasi-one-dimensional conductors. Using an effective action approach we show that the longitudinal acoustic phonon protects the gapless linear dispersion of the lowest phase mode in the presence of long-range Coulomb interactions. Moreove…
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We re-examine the effect of long-range Coulomb interactions on the collective amplitude and phase modes in the incommensurate charge-density-wave ground state of quasi-one-dimensional conductors. Using an effective action approach we show that the longitudinal acoustic phonon protects the gapless linear dispersion of the lowest phase mode in the presence of long-range Coulomb interactions. Moreover, in Gaussian approximation, amplitude fluctuations are not affected by long-range Coulomb interactions. We also calculate the collective mode dispersions at finite temperatures and compare our results with the measured energies of amplitude and phase modes in K$_{0.3}$MoO$_3$. With the exception of the lowest phase mode, the temperature dependence of the measured mode energies can be quantitatively described within a multi-phonon Fröhlich model for generic electron-phonon interactions neglecting long-range Coulomb interactions.
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Submitted 14 August, 2023; v1 submitted 15 March, 2023;
originally announced March 2023.
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Combined investigation of collective amplitude and phase modes in a quasi-one-dimensional charge-density-wave system over a wide spectral range
Authors:
Konstantin Warawa,
Nicolas Christophel,
Sergei Sobolev,
Jure Demsar,
Hartmut G. Roskos,
Mark D. Thomson
Abstract:
We investigate experimentally both the amplitude and phase channels of the collective modes in the quasi-1D charge-density-wave (CDW) system, K0.3MoO3, by combining (i) optical impulsive-Raman pump-probe and (ii) terahertz time-domain spectroscopy (THz-TDS), with high resolution and a detailed analysis of the full complex-valued spectra in both cases. This allows an unequivocal assignment of the o…
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We investigate experimentally both the amplitude and phase channels of the collective modes in the quasi-1D charge-density-wave (CDW) system, K0.3MoO3, by combining (i) optical impulsive-Raman pump-probe and (ii) terahertz time-domain spectroscopy (THz-TDS), with high resolution and a detailed analysis of the full complex-valued spectra in both cases. This allows an unequivocal assignment of the observed bands to CDW modes across the THz range up to 9 THz. We revise and extend a time-dependent Ginzburg-Landau model to account for the observed temperature dependence of the modes, where the combination of both amplitude and phase modes allows one to robustly determine the bare-phonon and electron-phonon coupling parameters. While the coupling is indeed strongest for the lowest-energy phonon, dropping sharply for the immediately subsequent phonons, it grows back significantly for the higher-energy phonons, demonstrating their important role in driving the CDW formation. We also include a reassessment of our previous analysis of the lowest-lying phase modes, whereby assuming weaker electronic damping for the phase channel results in a qualitative picture more consistent with quantum-mechanical treatments of the collective modes, with a strongly coupled amplitudon and phason as the lowest modes.
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Submitted 15 March, 2023;
originally announced March 2023.
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Higher-harmonic generation in boron-doped silicon from band carriers and bound-dopant photoionization
Authors:
Fanqi Meng,
Frederik Walla,
Sergey Kovalev,
Jan-Christoph Deinert,
Igor Ilyakov,
Min Chen,
Alexey Ponomaryov,
Sergey G. Pavlov,
Heinz-Wilhelm Hubers,
Nikolay V. Abrosimov,
Christoph Jungemann,
Hartmut G. Roskos,
Mark D. Thomson
Abstract:
We investigate ultrafast harmonic generation (HG) in Si:B, driven by intense pump pulses with fields reaching ~100 kV/cm and a carrier frequency of 300 GHz, at 4 K and 300 K, both experimentally and theoretically. We report several novel findings concerning the nonlinear charge carrier dynamics in intense sub-THz fields. (i) Harmonics of order up to n=9 are observed at room temperature, while at l…
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We investigate ultrafast harmonic generation (HG) in Si:B, driven by intense pump pulses with fields reaching ~100 kV/cm and a carrier frequency of 300 GHz, at 4 K and 300 K, both experimentally and theoretically. We report several novel findings concerning the nonlinear charge carrier dynamics in intense sub-THz fields. (i) Harmonics of order up to n=9 are observed at room temperature, while at low temperature we can resolve harmonics reaching even n=13. The susceptibility per charge carrier at moderate field strength is as high as for charge carriers in graphene, considered to be one of the materials with the strongest sub-THz nonlinear response. (ii) For T=300 K, where the charge carriers bound to acceptors are fully thermally ionized into the valence subbands, the susceptibility values decrease with increasing field strength. Simulations incorporating multi-valence-band Monte-Carlo and finite-difference-time-domain (FDTD) propagation show that here, the HG process becomes increasingly dominated by energy-dependent scattering rates over the contribution from band non-parabolicity, due to the onset of optical-phonon emission, which ultimately leads to the saturation at high fields. (iii) At T=4 K, where the majority of charges are bound to acceptors, we observe a drastic rise of the HG yields for internal pump fields of 30 kV/cm, as one reaches the threshold for tunnel ionization. We disentangle the HG contributions in this case into contributions from the initial 'generational'- and subsequent band-nonlinearities, and show that scattering seriously degrades any coherent recollision during the subsequent oscillation of the holes.
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Submitted 2 March, 2023;
originally announced March 2023.
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Colossal magnetoresistance in EuZn$_2$P$_2$ and its electronic and magnetic structure
Authors:
Sarah Krebber,
Marvin Kopp,
Charu Garg,
Kurt Kummer,
Jörg Sichelschmidt,
Susanne Schulz,
Georg Poelchen,
Max Mende,
Alexander V. Virovets,
Konstantin Warawa,
Mark D. Thomson,
Artem V. Tarasov,
Dmitry Yu. Usachov,
Denis V. Vyalikh,
Hartmut G. Roskos,
Jens Müller,
Cornelius Krellner,
Kristin Kliemt
Abstract:
We investigate single crystals of the trigonal antiferromagnet EuZn$_2$P$_2$ ($P\overline{3}m1$) by means of electrical transport, magnetization measurements, X-ray magnetic scattering, optical reflectivity, angle-resolved photoemission spectroscopy (ARPES) and ab-initio band structure calculations (DFT+U). We find that the electrical resistivity of EuZn$_2$P$_2$ increases strongly upon cooling an…
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We investigate single crystals of the trigonal antiferromagnet EuZn$_2$P$_2$ ($P\overline{3}m1$) by means of electrical transport, magnetization measurements, X-ray magnetic scattering, optical reflectivity, angle-resolved photoemission spectroscopy (ARPES) and ab-initio band structure calculations (DFT+U). We find that the electrical resistivity of EuZn$_2$P$_2$ increases strongly upon cooling and can be suppressed in magnetic fields by several orders of magnitude (CMR effect). Resonant magnetic scattering reveals a magnetic ordering vector of $q = (0\, 0\, \frac{1}{2})$, corresponding to an $A$-type antiferromagnetic (AFM) order, below $T_{\rm N} = 23.7\,\rm K$. We find that the moments are canted out of the $a-a$ plane by an angle of about $40^{\circ}\pm 10^{\circ}$ degrees and aligned along the [100] in the $a-a$ plane. We observe nearly isotropic magnetization behavior for low fields and low temperatures which is consistent with the magnetic scattering results. The magnetization measurements show a deviation from the Curie-Weiss behavior below $\approx 150\,\rm K$, the temperature below which also the field dependence of the material's resistivity starts to increase. An analysis of the infrared reflectivity spectrum at $T=295\,\rm K$ allows us to resolve the main phonon bands and intra-/interband transitions, and estimate indirect and direct band gaps of $E_i^{\mathrm{opt}}=0.09\,\rm{eV}$ and $E_d^{\mathrm{opt}}=0.33\,\rm{eV}$, respectively, which are in good agreement with the theoretically predicted ones. The experimental band structure obtained by ARPES is nearly $T$-independent above and below $T_{\rm N}$. The comparison of the theoretical and experimental data shows a weak intermixing of the Eu 4$f$ states close to the $Γ$ point with the bands formed by the phosphorous 3$p$ orbitals leading to an induction of a small magnetic moment at the P sites.
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Submitted 16 August, 2023; v1 submitted 28 February, 2023;
originally announced February 2023.
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Amplitude/Phase Retrieval for Terahertz Holography with Supervised and Unsupervised Physics-Informed Deep Learning
Authors:
Mingjun Xiang,
Hui Yuan,
Lingxiao Wang,
Kai Zhou,
Hartmut G. Roskos
Abstract:
Recently, digital holographic imaging techniques (including methods with heterodyne detection) have found increased attention in the terahertz (THz) frequency range. However, holographic techniques rely on the use of a reference beam in order to obtain phase information. This letter investigates the potential of reference-free THz holographic imaging and proposes novel supervised and unsupervised…
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Recently, digital holographic imaging techniques (including methods with heterodyne detection) have found increased attention in the terahertz (THz) frequency range. However, holographic techniques rely on the use of a reference beam in order to obtain phase information. This letter investigates the potential of reference-free THz holographic imaging and proposes novel supervised and unsupervised deep learning (DL) methods for amplitude and phase recovery. The calculations incorporate Fresnel diffraction as prior knowledge. We first show that our unsupervised dual network can predict amplitude and phase simultaneously, thus overcoming the limitation of previous studies which could only predict phase objects. This is demonstrated with synthetic 2D image data as well as with measured 2D THz diffraction images. The advantage of unsupervised DL is that it can be used directly without labeling by human experts. We then address supervised DL -- a concept of general applicability. We introduce training with a database set of 2D images taken in the visible spectra range and modified by us numerically to emulate THz images. With this approach, we avoid the prohibitively time-consuming collection of a large number of THz-frequency images. The results obtained with both approaches represent the first steps towards fast holographic THz imaging with reference-beam-free low-cost power detection.
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Submitted 13 December, 2022;
originally announced December 2022.
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Enhancement of the Monolayer WS2 Exciton Photoluminescence with a 2D-Material/Air/GaP In-Plane Microcavity
Authors:
Oliver Mey,
Franziska Wall,
Lorenz Maximilian Schneider,
Darius Günder,
Frederik Walla,
Amin Soltani,
Hartmut G. Roskos,
Ni Yao,
Peng Qing,
Wei Fang,
Arash Rahimi-Iman
Abstract:
Light-matter interaction with two-dimensional materials gained significant attention in recent years leading to the reporting of weak and strong coupling regimes, and effective nano-laser operation with various structures. Particularly, future applications involving monolayer materials in waveguide-coupled on-chip integrated circuitry and valleytronic nanophotonics require controlling, directing a…
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Light-matter interaction with two-dimensional materials gained significant attention in recent years leading to the reporting of weak and strong coupling regimes, and effective nano-laser operation with various structures. Particularly, future applications involving monolayer materials in waveguide-coupled on-chip integrated circuitry and valleytronic nanophotonics require controlling, directing and optimizing photoluminescence. In this context, photoluminescence enhancement from monolayer transition-metal dichalcogenides on patterned semiconducting substrates becomes attractive. It is demonstrated in our work using focussed-ion-beam-etched GaP and monolayer WS2 suspended on hexagonal-BN buffer sheets. We present a unique optical microcavity approach capable of both efficient in-plane and out-of-plane confinement of light, which results in a WS2 photoluminescence enhancement by a factor of 10 compared to the unstructured substrate at room temperature. The key concept is the combination of interference effects in both the horizontal direction using a bull's-eye-shaped circular Bragg grating and in vertical direction by means of a multiple reflection model with optimized etch depth of circular air-GaP structures for maximum constructive interference effects of the applied pump and expected emission light.
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Submitted 26 December, 2018;
originally announced December 2018.
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Phase-channel dynamics reveal the role of impurities and screening in a quasi-one-dimensional charge-density wave system
Authors:
M. D. Thomson,
K. Rabia,
F. Meng,
M. Bykov,
S. van Smaalen,
H. G. Roskos
Abstract:
We investigate the low-energy phase excitations of the quasi-one-dimensional charge density wave (CDW) in $\mathrm{K}_{0.3}\mathrm{Mo}\mathrm{O}_3$, by direct probing of infrared-active CDW-lattice modes (phase-phonons) with ultrafast terahertz spectroscopy. Both the nonequilibrium response and temperature dependence of the bands are reconciled by generalizing the time-dependent Ginzburg-Landau th…
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We investigate the low-energy phase excitations of the quasi-one-dimensional charge density wave (CDW) in $\mathrm{K}_{0.3}\mathrm{Mo}\mathrm{O}_3$, by direct probing of infrared-active CDW-lattice modes (phase-phonons) with ultrafast terahertz spectroscopy. Both the nonequilibrium response and temperature dependence of the bands are reconciled by generalizing the time-dependent Ginzburg-Landau theory, beyond that previously applied to the amplitude-phonons, to include impurity effects, while the photoinduced blue-shifts are attributed to a reduction of the electron-phonon coupling induced by a long-lived free-carrier population.
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Submitted 21 November, 2016;
originally announced November 2016.
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Ultrafast dynamic conductivity and scattering rate saturation of photoexcited charge carriers in silicon investigated with a midinfrared continuum probe
Authors:
Fanqi Meng,
Mark D. Thomson,
Bo E. Sernelius,
Michael Jörger,
Hartmut G. Roskos
Abstract:
We employ ultra-broadband terahertz-midinfrared probe pulses to characterize the optical response of photoinduced charge-carrier plasmas in high-resistivity silicon in a reflection geometry, over a wide range of excitation densities (10^{15}-10^{19} cm^{-3}) at room temperature. In contrast to conventional terahertz spectroscopy studies, this enables one to directly cover the frequency range encom…
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We employ ultra-broadband terahertz-midinfrared probe pulses to characterize the optical response of photoinduced charge-carrier plasmas in high-resistivity silicon in a reflection geometry, over a wide range of excitation densities (10^{15}-10^{19} cm^{-3}) at room temperature. In contrast to conventional terahertz spectroscopy studies, this enables one to directly cover the frequency range encompassing the resultant plasma frequencies. The intensity reflection spectra of the thermalized plasma, measured using sum-frequency (up-conversion) detection of the probe pulses, can be modeled well by a standard Drude model with a density-dependent momentum scattering time of approx. 200 fs at low densities, reaching approx. 20 fs for densities of approx. 10^{19} cm^{-3}, where the increase of the scattering rate saturates. This behavior can be reproduced well with theoretical results based on the generalized Drude approach for the electron-hole scattering rate, where the saturation occurs due to phase-space restrictions as the plasma becomes degenerate. We also study the initial sub-picosecond temporal development of the Drude response, and discuss the observed rise in the scattering time in terms of initial charge-carrier relaxation, as well as the optical response of the photoexcited sample as predicted by finite-difference time-domain simulations.
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Submitted 10 February, 2015;
originally announced February 2015.
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Electric field gradient induced effects in GaAs/AlGaAs modulation-doped structures and high frequency sensing
Authors:
D. Seliuta,
A. Juozapavicius,
V. Gruzinskis,
S. Balakauskas,
S. Asmontas,
G. Valusis,
W. -H. Chow,
P. Steenson,
P. Harrison,
A. Lisauskas,
H. G. Roskos,
K. Koehler
Abstract:
Electric field gradient effects induced by an asymmetrically in-plane shaped GaAs/AlGaAs modulation-doped structures of various design are investigated within 4-300 K temperature range. It is demonstrated that current-voltage characteristics of such structures at low, 4-80 K, temperatures exhibit well-pronounced asymmetry arising due to a presence of two different gradients of the electric field…
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Electric field gradient effects induced by an asymmetrically in-plane shaped GaAs/AlGaAs modulation-doped structures of various design are investigated within 4-300 K temperature range. It is demonstrated that current-voltage characteristics of such structures at low, 4-80 K, temperatures exhibit well-pronounced asymmetry arising due to a presence of two different gradients of the electric field in a two dimensional electron gas. This phenomenon is caused by both, different accumulation of two-dimensional electrons due to asymmetrical shape of the structure and nonlocality in the electron drift velocity. Experiments are illustrated by a phenomenological model and Monte Carlo simulation. Possible applications of the effect to detect electromagnetic radiation of GHz and THz frequencies are discussed as well.
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Submitted 21 April, 2008; v1 submitted 3 November, 2007;
originally announced November 2007.
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Comment on "Dispersive Terahertz Gain of a Nonclassical Oscillator: Bloch Oscillation in Semiconductor Superlattices"
Authors:
A. Lisauskas,
N. V. Demarina,
E. Mohler,
H. G. Roskos
Abstract:
In two recent Letters [Phys. Rev. Lett. 90, 046806; Phys. Rev. Lett. 94, 057408], Hirakawa et al. investigate the emission of coherent terahertz (THz) radiation from optically excited superlattices. The authors interpret the spectra of the THz transients in terms of a semiclassical transport model and conclude that the data provide evidence for the existence of the so-called Bloch gain. We show…
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In two recent Letters [Phys. Rev. Lett. 90, 046806; Phys. Rev. Lett. 94, 057408], Hirakawa et al. investigate the emission of coherent terahertz (THz) radiation from optically excited superlattices. The authors interpret the spectra of the THz transients in terms of a semiclassical transport model and conclude that the data provide evidence for the existence of the so-called Bloch gain. We show that the interpretation of the data in terms of a conductivity is, however, not performed correctly, thus making the conclusions of cited authors void.
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Submitted 26 May, 2006;
originally announced May 2006.
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Determination of the Carrier-Envelope Phase of Few-Cycle Laser Pulses with Terahertz-Emission Spectroscopy
Authors:
Markus Kress,
Torsten Loeffler,
Mark D. Thomson,
Reinhard Doerner,
Hartmut Gimpel,
Karl Zrost,
Thorsten Ergler,
Robert Moshammer,
Uwe Morgner,
Joachim Ullrich,
Hartmut G. Roskos
Abstract:
The availability of few-cycle optical pulses opens a window to physical phenomena occurring on the attosecond time scale. In order to take full advantage of such pulses, it is crucial to measure and stabilise their carrier-envelope (CE) phase, i.e., the phase difference between the carrier wave and the envelope function. We introduce a novel approach to determine the CE phase by down-conversion…
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The availability of few-cycle optical pulses opens a window to physical phenomena occurring on the attosecond time scale. In order to take full advantage of such pulses, it is crucial to measure and stabilise their carrier-envelope (CE) phase, i.e., the phase difference between the carrier wave and the envelope function. We introduce a novel approach to determine the CE phase by down-conversion of the laser light to the terahertz (THz) frequency range via plasma generation in ambient air, an isotropic medium where optical rectification (down-conversion) in the forward direction is only possible if the inversion symmetry is broken by electrical or optical means. We show that few-cycle pulses directly produce a spatial charge asymmetry in the plasma. The asymmetry, associated with THz emission, depends on the CE phase, which allows for a determination of the phase by measurement of the amplitude and polarity of the THz pulse.
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Submitted 16 March, 2006;
originally announced March 2006.
