-
Current-driven dynamics and ratchet effect of skyrmion bubbles in a ferrimagnetic insulator
Authors:
Saül Vélez,
Sandra Ruiz-Gómez,
Jakob Schaab,
Elzbieta Gradauskaite,
Martin S. Wörnle,
Pol Welter,
Benjamin J. Jacot,
Christian L. Degen,
Morgan Trassin,
Manfred Fiebig,
Pietro Gambardella
Abstract:
Magnetic skyrmions are compact chiral spin textures that exhibit a rich variety of topological phenomena and hold potential for developing high-density memory devices and novel computing schemes driven by spin currents. Here, we demonstrate room temperature interfacial stabilization and current-driven control of skyrmion bubbles in the ferrimagnetic insulator Tm3Fe5O12 (TmIG) coupled to Pt. We tra…
▽ More
Magnetic skyrmions are compact chiral spin textures that exhibit a rich variety of topological phenomena and hold potential for developing high-density memory devices and novel computing schemes driven by spin currents. Here, we demonstrate room temperature interfacial stabilization and current-driven control of skyrmion bubbles in the ferrimagnetic insulator Tm3Fe5O12 (TmIG) coupled to Pt. We track the current-induced motion of individual skyrmion bubbles. The ferrimagnetic order of the crystal together with the interplay of spin-orbit torques and pinning determine the skyrmion dynamics in TmIG and result in a strong skyrmion Hall effect characterized by a negative deflection angle and hopping motion. Further, we show that the velocity and depinning threshold of the skyrmion bubbles can be modified by exchange coupling TmIG to an in-plane magnetized Y3Fe5O12 layer, which distorts the spin texture of the skyrmions and leads to a directional-dependent rectification of their dynamics. This effect, which is equivalent to a magnetic ratchet, is exploited to control the skyrmion flow in a racetrack-like device.
△ Less
Submitted 19 January, 2023;
originally announced January 2023.
-
Charged ferroelectric domain walls for deterministic a.c. signal control
Authors:
J. Schultheiß,
E. Lysne,
L. Puntigam,
J. Schaab,
E. Bourret,
Z. Yan,
S. Krohns,
D. Meier
Abstract:
The direct current (d.c.) conductivity and emergent functionalities at ferroelectric domain walls are closely linked to the local polarization charges. Depending on the charge state, the walls can exhibit unusual d.c. conduction ranging from insulating to metallic-like, which is leveraged in domain-wall-based memory, multi-level data storage, and synaptic devices. In contrast to the functional d.c…
▽ More
The direct current (d.c.) conductivity and emergent functionalities at ferroelectric domain walls are closely linked to the local polarization charges. Depending on the charge state, the walls can exhibit unusual d.c. conduction ranging from insulating to metallic-like, which is leveraged in domain-wall-based memory, multi-level data storage, and synaptic devices. In contrast to the functional d.c. behaviors at charged walls, their response to alternating currents (a.c.) remains to be resolved. Here, we reveal a.c. characteristics at positively and negatively charged walls in ErMnO3, distinctly different from the response of the surrounding domains. By combining voltage-dependent spectroscopic measurements on macroscopic and local scales, we demonstrate a pronounced non-linear response at the electrode-wall junction, which correlates with the domain-wall charge state. The dependence on the a.c. drive voltage enables reversible switching between uni- and bipolar output signals, providing conceptually new opportunities for the application of charged walls as functional nanoelements in a.c. circuitry.
△ Less
Submitted 3 May, 2021;
originally announced May 2021.
-
Intrinsic and extrinsic conduction contributions at nominally neutral domain walls in hexagonal manganites
Authors:
J. Schultheiß,
J. Schaab,
D. R. Småbråten,
S. H. Skjærvø,
E. Bourret,
Z. Yan,
S. M. Selbach,
D. Meier
Abstract:
Conductive and electrostatic atomic force microscopy (cAFM and EFM) are used to investigate the electric conduction at nominally neutral domain walls in hexagonal manganites. The EFM measurements reveal a propensity of mobile charge carriers to accumulate at the nominally neutral domain walls in ErMnO3, which is corroborated by cAFM scans showing locally enhanced d.c. conductance. Our findings are…
▽ More
Conductive and electrostatic atomic force microscopy (cAFM and EFM) are used to investigate the electric conduction at nominally neutral domain walls in hexagonal manganites. The EFM measurements reveal a propensity of mobile charge carriers to accumulate at the nominally neutral domain walls in ErMnO3, which is corroborated by cAFM scans showing locally enhanced d.c. conductance. Our findings are explained based on established segregation enthalpy profiles for oxygen vacancies and interstitials, providing a microscopic model for previous, seemingly disconnected observations ranging from insulating to conducting domain wall behavior. In addition, we observe variations in conductance between different nominally neutral walls that we attribute to deviations from the ideal charge-neutral structure within the bulk, leading to a superposition of extrinsic and intrinsic contributions. Our study clarifies the complex transport properties at nominally neutral domain walls in hexagonal manganites and establishes new possibilities for tuning their electronic response based on oxidation conditions, opening the door for domain-wall based sensor technology.
△ Less
Submitted 30 March, 2020; v1 submitted 27 March, 2020;
originally announced March 2020.
-
Electrostatic potential mapping at ferroelectric domain walls by low-temperature photoemission electron microscopy
Authors:
J. Schaab,
K. Shapovalov,
P. Schoenherr,
J. Hackl,
M. I. Khan,
M. Hentschel,
Z. Yan,
E. Bourret,
C. M. Schneider,
S. Nemsák,
M. Stengel,
A. Cano,
D. Meier
Abstract:
Low-temperature X-ray photoemission electron microscopy (X-PEEM) is used to measure the electric potential at domain walls in improper ferroelectric Er0.99Ca0.01MnO3. By combining X-PEEM with scanning probe microscopy and theory, we develop a model that relates the detected X-PEEM contrast to the emergence of uncompensated bound charges, explaining the image formation based on intrinsic electronic…
▽ More
Low-temperature X-ray photoemission electron microscopy (X-PEEM) is used to measure the electric potential at domain walls in improper ferroelectric Er0.99Ca0.01MnO3. By combining X-PEEM with scanning probe microscopy and theory, we develop a model that relates the detected X-PEEM contrast to the emergence of uncompensated bound charges, explaining the image formation based on intrinsic electronic domain-wall properties. In contrast to previously applied low-temperature electrostatic force microscopy (EFM), X-PEEM readily distinguishes between positive and negative bound charges at domain walls. Our study introduces an X-PEEM based approach for low-temperature electrostatic potential mapping, facilitating nanoscale spatial resolution and data acquisition times in the order of 0.1-1 sec.
△ Less
Submitted 14 January, 2020;
originally announced January 2020.
-
Magnetic properties and domain structure of ultrathin yttrium iron garnet/Pt bilayers
Authors:
Johannes Mendil,
Morgan Trassin,
Qingqing Bu,
Jakob Schaab,
Manuel Baumgartner,
Christoph Murer,
Phuong T. Dao,
Jaianth Vijayakumar,
David Bracher,
Corinne Bouillet,
Carlos A. F. Vaz,
Manfred Fiebig,
Pietro Gambardella
Abstract:
We report on the structure, magnetization, magnetic anisotropy, and domain morphology of ultrathin yttrium iron garnet (YIG)/Pt films with thickness ranging from 3 to 90 nm. We find that the saturation magnetization is close to the bulk value in the thickest films and decreases towards low thickness with a strong reduction below 10 nm. We characterize the magnetic anisotropy by measuring the trans…
▽ More
We report on the structure, magnetization, magnetic anisotropy, and domain morphology of ultrathin yttrium iron garnet (YIG)/Pt films with thickness ranging from 3 to 90 nm. We find that the saturation magnetization is close to the bulk value in the thickest films and decreases towards low thickness with a strong reduction below 10 nm. We characterize the magnetic anisotropy by measuring the transverse spin Hall magnetoresistance as a function of applied field. Our results reveal strong easy plane anisotropy fields of the order of 50-100 mT, which add to the demagnetizing field, as well as weaker in-plane uniaxial anisotropy ranging from 10 to 100 $μ$T. The in-plane easy axis direction changes with thickness, but presents also significant fluctuations among samples with the same thickness grown on the same substrate. X-ray photoelectron emission microscopy reveals the formation of zigzag magnetic domains in YIG films thicker than 10 nm, which have dimensions larger than several 100 $μ$m and are separated by achiral Néel-type domain walls. Smaller domains characterized by interspersed elongated features are found in YIG films thinner than 10 nm.
△ Less
Submitted 19 March, 2019;
originally announced March 2019.
-
High-speed domain wall racetracks in a magnetic insulator
Authors:
Saül Vélez,
Jakob Schaab,
Martin S. Wörnle,
Marvin Müller,
Elzbieta Gradauskaite,
Pol Welter,
Cameron Gutgsell,
Corneliu Nistor,
Christian L. Degen,
Morgan Trassin,
Manfred Fiebig,
Pietro Gambardella
Abstract:
Recent reports of current-induced switching of ferrimagnetic oxides coupled to a heavy metal layer have opened realistic prospects for implementing magnetic insulators into electrically addressable spintronic devices. However, key aspects such as the configuration and dynamics of magnetic domain walls driven by electrical currents in insulating oxides remain unexplored. Here, we investigate the in…
▽ More
Recent reports of current-induced switching of ferrimagnetic oxides coupled to a heavy metal layer have opened realistic prospects for implementing magnetic insulators into electrically addressable spintronic devices. However, key aspects such as the configuration and dynamics of magnetic domain walls driven by electrical currents in insulating oxides remain unexplored. Here, we investigate the internal structure of the domain walls in Tm3Fe5O12 (TmIG) and TmIG/Pt bilayers and demonstrate their efficient manipulation by spin-orbit torques with velocities of up to 400 m s$^{-1}$ and minimal current threshold for domain wall flow of 5 x 10$^{6}$ A cm$^{-2}$. Domain wall racetracks embedded in TmIG are defined by the deposition of Pt current lines, which allow us to control the domain propagation and magnetization switching in selected regions of an extended magnetic layer. Scanning nitrogen-vacancy magnetometry reveals that the domain walls of thin TmIG films are Néel walls with left-handed chirality, with the domain wall magnetization rotating towards an intermediate Néel-Bloch configuration upon deposition of Pt. These results indicate the presence of a sizable interfacial Dzyaloshinskii-Moriya interaction in TmIG, which leads to novel possibilities to control the formation of chiral spin textures in magnetic insulators. Ultimately, domain wall racetracks provide an efficient scheme to pattern the magnetic landscape of TmIG in a fast and reversible way
△ Less
Submitted 14 February, 2019;
originally announced February 2019.
-
Electrical half-wave rectification at ferroelectric domain walls
Authors:
J. Schaab,
S. H. Skjærvø,
S. Krohns,
X. Dai,
M. Holtz,
A. Cano,
M. Lilienblum,
Z. Yan,
E. Bourret,
D. A. Muller,
M. Fiebig,
S. M. Selbach,
D. Meier
Abstract:
Ferroelectric domain walls represent multifunctional 2D-elements with great potential for novel device paradigms at the nanoscale. Improper ferroelectrics display particularly promising types of domain walls, which, due to their unique robustness, are the ideal template for imposing specific electronic behavior. Chemical doping, for instance, induces p- or n-type characteristics and electric field…
▽ More
Ferroelectric domain walls represent multifunctional 2D-elements with great potential for novel device paradigms at the nanoscale. Improper ferroelectrics display particularly promising types of domain walls, which, due to their unique robustness, are the ideal template for imposing specific electronic behavior. Chemical doping, for instance, induces p- or n-type characteristics and electric fields reversibly switch between resistive and conductive domain-wall states. Here, we demonstrate diode-like conversion of alternating-current (AC) into direct-current (DC) output based on neutral 180$^{\circ}$ domain walls in improper ferroelectric ErMnO$_3$. By combining scanning probe and dielectric spectroscopy, we show that the rectification occurs for frequencies at which the domain walls are fixed to their equilibrium position. The practical frequency regime and magnitude of the output is controlled by the bulk conductivity. Using density functional theory we attribute the transport behavior at the neutral walls to an accumulation of oxygen defects. Our study reveals domain walls acting as 2D half-wave rectifiers, extending domain-wall-based nanoelectronic applications into the realm of AC technology.
△ Less
Submitted 22 March, 2018;
originally announced March 2018.
-
Frequency dependent polarisation switching in h-ErMnO$_3$
Authors:
Alexander Ruff,
Ziyu Li,
Alois Loidl,
Jakob Schaab,
Manfred Fiebig,
Andres Cano,
Zewu Yan,
Edith Bourret,
Julia Glaum,
Dennis Meier,
Stephan Krohns
Abstract:
We report an electric-field poling study of the geometric-driven improper ferroelectric h-ErMnO$_3$. From a detailed dielectric analysis we deduce the temperature and frequency dependent range for which single-crystalline h-ErMnO$_3$ exhibits purely intrinsic dielectric behaviour, i.e., free from extrinsic so-called Maxwell-Wagner polarisations that arise, for example, from surface barrier layers.…
▽ More
We report an electric-field poling study of the geometric-driven improper ferroelectric h-ErMnO$_3$. From a detailed dielectric analysis we deduce the temperature and frequency dependent range for which single-crystalline h-ErMnO$_3$ exhibits purely intrinsic dielectric behaviour, i.e., free from extrinsic so-called Maxwell-Wagner polarisations that arise, for example, from surface barrier layers. In this regime ferroelectric hysteresis loops as function of frequency, temperature and applied electric fields are measured revealing the theoretically predicted saturation polarisation in the order of 5 - 6 $μ$C/cm$^2$. Special emphasis is put on frequency-dependent polarisation switching, which is explained in terms of domain-wall movement similar to proper ferroelectrics. Controlling the domain walls via electric fields brings us an important step closer to their utilization in domain-wall-based electronics.
△ Less
Submitted 26 February, 2018;
originally announced February 2018.
-
Electronic bulk and domain wall properties in B-site doped hexagonal ErMnO$_3$
Authors:
T. S. Holstad,
D. M. Evans,
A. Ruff,
D. R. Smaabraaten,
J. Schaab,
Ch. Tzschaschel,
Z. Yan,
E. Bourret,
S. M. Selbach,
S. Krohns,
D. Meier
Abstract:
Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more than a century of research on semiconductors, the impact of chemical substitutions on the local electronic response at domain walls is largely unexplored. Here, the hexagonal manganite ErMnO$_3$ is donor doped with Ti…
▽ More
Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more than a century of research on semiconductors, the impact of chemical substitutions on the local electronic response at domain walls is largely unexplored. Here, the hexagonal manganite ErMnO$_3$ is donor doped with Ti$^{4+}$. Density functional theory calculations show that Ti$^{4+}$ goes to the B-site, replacing Mn$^{3+}$. Scanning probe microscopy measurements confirm the robustness of the ferroelectric domain template. The electronic transport at both macro- and nanoscopic length scales is characterized. The measurements demonstrate the intrinsic nature of emergent domain wall currents and point towards Poole-Frenkel conductance as the dominant transport mechanism. Aside from the new insight into the electronic properties of hexagonal manganites, B-site doping adds an additional degree of freedom for tuning the domain wall functionality.
△ Less
Submitted 16 October, 2017;
originally announced October 2017.
-
Domain wall architecture in tetragonal ferroelectric thin films
Authors:
Gabriele De Luca,
Marta D. Rossell,
Jakob Schaab,
Nathalie Viart,
Manfred Fiebig,
Morgan Trassin
Abstract:
Domain walls in ferroelectrics exhibit a plethora of phases and functionalities not found in the bulk. The interplay of electrostatic, chemical, topological, and distortive inhomogeneities at the walls can be so complex, however, that this obstructs their technological performance. In tetragonal ferroelectrics like PbZrxTi1-xO3, for example, the desired functional 180° domain walls within out-of-p…
▽ More
Domain walls in ferroelectrics exhibit a plethora of phases and functionalities not found in the bulk. The interplay of electrostatic, chemical, topological, and distortive inhomogeneities at the walls can be so complex, however, that this obstructs their technological performance. In tetragonal ferroelectrics like PbZrxTi1-xO3, for example, the desired functional 180° domain walls within out-of-plane-polarized c-domains are interspersed by in-plane-polarized a-domains and the associated network of domain walls remains challenging to analyze. Here we use a combination of STEM and optical second harmonic generation (SHG) to determine the relation between strain, film thickness, local electric fields and the resulting domain and domain-wall structures across the entire thickness of a set of PZT films. We quantify the distribution of a-domains in the c-domain matrix of the films. Using locally applied electric fields we control the a/c distribution and induce the technologically preferable 180° domain walls. We find that these voltage induced walls are tilted and exhibit a mixed Ising-Néel type transverse rotation of polarization across the wall with a specific nonlinear optical response.
△ Less
Submitted 22 February, 2017;
originally announced February 2017.
-
Imaging and characterization of conducting ferroelectric domain walls by photoemission electron microscopy
Authors:
J. Schaab,
I. P. Krug,
F. Nickel,
D. M. Gottlob,
H. Doğanay,
A. Cano,
M. Hentschel,
Z. Yan,
E. Bourret,
C. M. Schneider,
R. Ramesh,
D. Meier
Abstract:
High-resolution X-ray photoemission electron microscopy (X-PEEM) is a well-established method for imaging ferroelectric domain structures. Here, we expand the scope of application of X-PEEM and demonstrate its capability for imaging and investigating domain walls in ferroelectrics with high-spatial resolution. Using ErMnO3 as test system, we show that ferroelectric domain walls can be visualized b…
▽ More
High-resolution X-ray photoemission electron microscopy (X-PEEM) is a well-established method for imaging ferroelectric domain structures. Here, we expand the scope of application of X-PEEM and demonstrate its capability for imaging and investigating domain walls in ferroelectrics with high-spatial resolution. Using ErMnO3 as test system, we show that ferroelectric domain walls can be visualized based on photo-induced charging effects and local variations in their electronic conductance can be mapped by analyzing the energy distribution of photoelectrons. Our results open the door for non-destructive, contract-free, and element-specific studies of the electronic and chemical structure at domain walls in ferroelectrics.
△ Less
Submitted 9 May, 2014; v1 submitted 8 May, 2014;
originally announced May 2014.
