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Cosmic-ray origin in OB associations and preferential acceleration of refractory elements: Evidence from abundances of elements 26Fe through 34Se
Authors:
B. F. Rauch,
J. T. Link,
K. Lodders,
M. H. Israel,
L. M. Barbier,
W. R. Binns,
E. R. Christian,
J. R. Cummings,
G. A. de Nolfo,
S. Geier,
R. A. Mewaldt,
J. W. Mitchell,
S. M. Schindler,
L. M. Scott,
E. C. Stone,
R. E. Streitmatter,
C. J. Waddington,
M. E. Wiedenbeck
Abstract:
We report abundances of elements from 26Fe to 34Se in the cosmic radiation measured during fifty days of exposure of the Trans-Iron Galactic Element Recorder (TIGER) balloon-borne instrument. These observations add support to the concept that the bulk of cosmic-ray acceleration takes place in OB associations, and they further support cosmic-ray acceleration models in which elements present in in…
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We report abundances of elements from 26Fe to 34Se in the cosmic radiation measured during fifty days of exposure of the Trans-Iron Galactic Element Recorder (TIGER) balloon-borne instrument. These observations add support to the concept that the bulk of cosmic-ray acceleration takes place in OB associations, and they further support cosmic-ray acceleration models in which elements present in interstellar grains are accelerated preferentially compared with those found in interstellar gas.
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Submitted 10 June, 2009;
originally announced June 2009.
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Effects of Bulk and Surface Conductivity on the Performance of CdZnTe Pixel Detectors
Authors:
Aleksey E. Bolotnikov,
C. M. Hubert Chen,
Walter R. Cook,
Fiona A. Harrison,
Irfan Kuvvetli,
Stephen M. Schindler
Abstract:
We studied the effects of bulk and surface conductivity on the performance of high-resistivity CdZnTe (CZT) pixel detectors with Pt contacts. We emphasize the difference in mechanisms of the bulk and surface conductivity as indicated by their different temperature behaviors. In addition, the existence of a thin (10-100 A) oxide layer on the surface of CZT, formed during the fabrication process,…
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We studied the effects of bulk and surface conductivity on the performance of high-resistivity CdZnTe (CZT) pixel detectors with Pt contacts. We emphasize the difference in mechanisms of the bulk and surface conductivity as indicated by their different temperature behaviors. In addition, the existence of a thin (10-100 A) oxide layer on the surface of CZT, formed during the fabrication process, affects both bulk and surface leakage currents. We demonstrate that the measured I-V dependencies of bulk current can be explained by considering the CZT detector as a metal-semiconductor-metal system with two back-to-back Schottky-barrier contacts. The high surface leakage current is apparently due to the presence of a low-resistivity surface layer that has characteristics which differ considerably from those of the bulk material. This surface layer has a profound effect on the charge collection efficiency in detectors with multi-contact geometry; some fraction of the electric field lines originated on the cathode intersects the surface areas between the pixel contacts where the charge produced by an ionizing particle gets trapped. To overcome this effect we place a grid of thin electrodes between the pixel contacts; when the grid is negatively biased, the strong electric field in the gaps between the pixels forces the electrons landing on the surface to move toward the contacts, preventing the charge loss. We have investigated these effects by using CZT pixel detectors indium bump bonded to a custom-built VLSI readout chip.
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Submitted 30 November, 2001;
originally announced December 2001.
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Properties of Pt Schottky Type Contacts On High-Resistivity CdZnTe Detectors
Authors:
Aleksey E. Bolotnikov,
Steven E. Boggs,
C. M. Hubert Chen,
Walter R. Cook,
Fiona A. Harrison,
Stephen M. Schindler
Abstract:
In this paper we present studies of the I-V characteristics of CdZnTe detectors with Pt contacts fabricated from high-resistivity single crystals grown by the high-pressure Brigman process. We have analyzed the experimental I-V curves using a model that approximates the CZT detector as a system consisting of a reversed Schottky contact in series with the bulk resistance. Least square fits to the…
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In this paper we present studies of the I-V characteristics of CdZnTe detectors with Pt contacts fabricated from high-resistivity single crystals grown by the high-pressure Brigman process. We have analyzed the experimental I-V curves using a model that approximates the CZT detector as a system consisting of a reversed Schottky contact in series with the bulk resistance. Least square fits to the experimental data yield 0.78-0.79 eV for the Pt-CZT Schottky barrier height, and <20 V for the voltage required to deplete a 2 mm thick CZT detector. We demonstrate that at high bias the thermionic current over the Schottky barrier, the height of which is reduced due to an interfacial layer between the contact and CZT material, controls the leakage current of the detectors. In many cases the dark current is not determined by the resistivity of the bulk material, but rather the properties of the contacts; namely by the interfacial layer between the contact and CZT material.
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Submitted 1 March, 2001;
originally announced March 2001.
