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Magnetoresistance and spintronic anisotropy induced by spin excitations along molecular spin chains
Authors:
K. Katcko,
E. Urbain,
L. Kandpal,
B. Chowrira,
F. Schleicher,
U. Halisdemir,
F. Ngassamnyakam,
D. Mertz,
B. Leconte,
N. Beyer,
D. Spor,
P. Panissod,
A. Boulard,
J. Arabski,
C. Kieber,
E. Sternitsky,
V. Da Costa,
M. Alouani,
M. Hehn,
F. Montaigne,
A. Bahouka,
W. Weber,
E. Beaurepaire,
D. Lacour,
S. Boukari
, et al. (1 additional authors not shown)
Abstract:
Electrically manipulating the quantum properties of nano-objects, such as atoms or molecules, is typically done using scanning tunnelling microscopes and lateral junctions. The resulting nanotransport path is well established in these model devices. Societal applications require transposing this knowledge to nano-objects embedded within vertical solid-state junctions, which can advantageously harn…
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Electrically manipulating the quantum properties of nano-objects, such as atoms or molecules, is typically done using scanning tunnelling microscopes and lateral junctions. The resulting nanotransport path is well established in these model devices. Societal applications require transposing this knowledge to nano-objects embedded within vertical solid-state junctions, which can advantageously harness spintronics to address these quantum properties thanks to ferromagnetic electrodes and high-quality interfaces. The challenge here is to ascertain the device's effective, buried nanotransport path, and to electrically involve these nano-objects in this path by shrinking the device area from the macro- to the nano-scale while maintaining high structural/chemical quality across the heterostructure. We've developed a low-tech, resist- and solvent-free technological process that can craft nanopillar devices from entire in-situ grown heterostructures, and use it to study magnetotransport between two Fe and Co ferromagnetic electrodes across a functional magnetic CoPc molecular layer. We observe how spin-flip transport across CoPc molecular spin chains promotes a specific magnetoresistance effect, and alters the nanojunction's magnetism through spintronic anisotropy. In the process, we identify three magnetic units along the effective nanotransport path thanks to a macrospin model of magnetotransport. Our work elegantly connects the until now loosely associated concepts of spin-flip spectroscopy, magnetic exchange bias and magnetotransport due to molecular spin chains, within a solid-state device. We notably measure a 5.9meV energy threshold for magnetic decoupling between the Fe layer's buried atoms and those in contact with the CoPc layer forming the so-called 'spinterface'. This provides a first insight into the experimental energetics of this promising low-power information encoding unit.
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Submitted 22 November, 2019; v1 submitted 23 October, 2019;
originally announced October 2019.
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Spin-driven electrical power generation at room temperature
Authors:
K. Katcko,
E. Urbain,
B. Taudul,
F. Schleicher,
J. Arabski,
E. Beaurepaire,
B. Vileno,
D. Spor,
W. Weber,
D. Lacour,
S. Boukari,
M. Hehn,
M. Alouani,
J. Fransson,
M. Bowen
Abstract:
To mitigate climate change, our global society is harnessing direct (solar irradiation) and indirect (wind/water flow) sources of renewable electrical power generation. Emerging direct sources include current-producing thermal gradients in thermoelectric materials, while quantum physics-driven processes to convert quantum information into energy have been demonstrated at very low temperatures. The…
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To mitigate climate change, our global society is harnessing direct (solar irradiation) and indirect (wind/water flow) sources of renewable electrical power generation. Emerging direct sources include current-producing thermal gradients in thermoelectric materials, while quantum physics-driven processes to convert quantum information into energy have been demonstrated at very low temperatures. The magnetic state of matter, assembled by ordering the electron's quantum spin property, represents a sizeable source of built-in energy. We propose to create a direct source of electrical power at room temperature (RT) by utilizing magnetic energy to harvest thermal fluctuations on paramagnetic (PM) centers. Our spin engine rectifies current fluctuations across the PM centers' spin states according to the electron spin by utilizing so-called 'spinterfaces' with high spin polarization. As a rare experimental event, we demonstrate how this path can generate 0.1nW at room temperature across a 20 micron-wide spintronic device called the magnetic tunnel junction, assembled using commonplace Co, C and MgO materials. The presence of this path in our experiment, which also generates very high spintronic performance, is confirmed by analytical and ab-initio calculations. Device downscaling, and the ability for other materials systems than the spinterface to select a transport spin channel at RT widens opportunities for routine device reproduction. The challenging control over PM centers within the tunnel barrier's nanotransport path may be addressed using oxide- and organic-based nanojunctions. At present densities in MRAM products, this spin engine could lead to 'always-on' areal power densities well beyond that generated by solar irradiation on earth. Further developing this concept can fundamentally alter our energy-driven society's global economic, social and geopolitical constructs.
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Submitted 19 March, 2019; v1 submitted 26 September, 2018;
originally announced September 2018.
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Linking electronic transport through a spin crossover thin film to the molecular spin state using X-ray absorption spectroscopy operando techniques
Authors:
Filip Schleicher,
Michał Studniarek,
Kuppusamy Senthil Kumar,
Etienne Urbain,
Kostantine Katcko,
Jinjie Chen,
Timo Frauhammer,
Marie Hervé,
Ufuk Halisdemir,
Lalit Mohan Kandpal,
Daniel Lacour,
Alberto Riminucci,
Loic Joly,
Fabrice Scheurer,
Benoit Gobaut,
Fadi Choueikani,
Edwige Otero,
Philippe Ohresser,
Jacek Arabski,
Guy Schmerber,
Wulf Wulfhekel,
Eric Beaurepaire,
Wolfgang Weber,
Samy Boukari,
Mario Ruben
, et al. (1 additional authors not shown)
Abstract:
One promising route toward encoding information is to utilize the two stable electronic states of a spin crossover molecule. However, while this property is clearly manifested in transport across single molecule junctions, evidence linking charge transport across a solid-state device to the molecular film's spin state has thus far remained indirect. To establish this link, we deploy materials-cent…
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One promising route toward encoding information is to utilize the two stable electronic states of a spin crossover molecule. However, while this property is clearly manifested in transport across single molecule junctions, evidence linking charge transport across a solid-state device to the molecular film's spin state has thus far remained indirect. To establish this link, we deploy materials-centric and device-centric operando experiments involving X-ray absorption spectroscopy. We find a correlation between the temperature dependencies of the junction resistance and the Fe spin state within the device's Fe(bpz)2(phen) molecular film. We also factually observe that the Fe molecular site mediates charge transport. Our dual operando studies reveal that transport involves a subset of molecules within an electronically heterogeneous spin crossover film. Our work confers an insight that substantially improves the state-of-the-art regarding spin crossover-based devices, thanks to a methodology that can benefit device studies of other next-generation molecular compounds.
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Submitted 3 February, 2018; v1 submitted 30 January, 2018;
originally announced January 2018.
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Disentangling magnetic hardening and molecular spin chain contributions to exchange bias in ferromagnet/molecule bilayers
Authors:
Samy Boukari,
Hashim Jabbar,
Filip Schleicher,
Manuel Gruber,
Jacek Arabski,
Victor Da Costa,
Guy Schmerber,
Prashanth Rengasamy,
Bertrand Vileno,
Wolfgang Weber,
Martin Bowen,
Eric Beaurepaire
Abstract:
We performed SQUID and FMR magnetometry experiments to clarify the relationship between two reported magnetic exchange effects arising from interfacial spin-polarized charge transfer within ferromagnetic metal (FM)/molecule bilayers: the magnetic hardening effect, and spinterface-stabilized molecular spin chains. To disentangle these effects, both of which can affect the FM magnetization reversal,…
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We performed SQUID and FMR magnetometry experiments to clarify the relationship between two reported magnetic exchange effects arising from interfacial spin-polarized charge transfer within ferromagnetic metal (FM)/molecule bilayers: the magnetic hardening effect, and spinterface-stabilized molecular spin chains. To disentangle these effects, both of which can affect the FM magnetization reversal, we tuned the metal phthalocyanine molecule central site's magnetic moment to selectively enhance or suppress the formation of spin chains within the molecular film. We find that both effects are distinct, and additive. In the process, we 1) extended the list of FM/molecule candidate pairs that are known to generate magnetic exchange effects, 2) experimentally confirmed the predicted increase in anisotropy upon molecular adsorption; and 3) showed that spin chains within the molecular film can enhance magnetic exchange. This magnetic ordering within the organic layer implies a structural ordering. Thus, by distengangling the magnetic hardening and exchange bias contributions, our results confirm, as an echo to progress regarding inorganic spintronic tunnelling, that the milestone of spintronic tunnelling across structurally ordered organic barriers has been reached through previous magnetotransport experiments. This paves the way for solid-state devices studies that exploit the quantum physical properties of spin chains, notably through external stimuli.
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Submitted 20 December, 2017;
originally announced December 2017.
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Hole transport across MgO-based magnetic tunnel junctions with high resistance-area product due to oxygen vacancies
Authors:
F. Schleicher,
B. Taudul,
U. Halisdemir,
K. Katcko,
E. Monteblanco,
D. Lacour,
S. Boukari,
F. Montaigne,
E. Urbain,
L. M. Kandpal,
J. Arabski,
W. Weber,
E. Beaurepaire,
M. Hehn,
M. Alouani,
M. Bowen
Abstract:
The quantum mechanical tunnelling process conserves the quantum properties of the particle considered. As applied to solid-state tunnelling (SST), this physical law was verified, within the field of spintronics, regarding the electron spin in early experiments across Ge tunnel barriers, and in the 90s across Al2O3 barriers. The conservation of the quantum parameter of orbital occupancy, as grouped…
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The quantum mechanical tunnelling process conserves the quantum properties of the particle considered. As applied to solid-state tunnelling (SST), this physical law was verified, within the field of spintronics, regarding the electron spin in early experiments across Ge tunnel barriers, and in the 90s across Al2O3 barriers. The conservation of the quantum parameter of orbital occupancy, as grouped into electronic symmetries, was observed in the '00s across MgO barriers, followed by SrTiO3 (STO). Barrier defects, such as oxygen vacancies, partly conserve this electronic symmetry. In the solid-state, an additional subtlety is the sign of the charge carrier: are holes or electrons involved in transport? We demonstrate that SST across MgO magnetic tunnel junctions (MTJs) with a large resistance-area (RA) product involves holes by examining how shifting the MTJ's Fermi level alters the ensuing barrier heights defined by the barrier's oxygen vacancies. In the process, we consolidate the description of tunnel barrier heights induced by specific oxygen-vacancy induced localized states. Our work opens prospects to understand the concurrent observation of high TMR and spin transfer torque across MgO-based nanopillars.
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Submitted 23 March, 2019; v1 submitted 15 November, 2017;
originally announced November 2017.
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Control of defect-mediated tunneling barrier heights in ultrathin MgO films
Authors:
D. J. Kim,
W. S. Choi,
F. Schleicher,
R. H. Shin,
S. Boukari,
V. Davesne,
C. Kieber,
J. Arabski,
G. Schmerber,
E. Beaurepaire,
W. Jo,
M. Bowen
Abstract:
The impact of oxygen vacancies on local tunneling properties across rf-sputtered MgO thin films was investigated by optical absorption spectroscopy and conducting atomic force microscopy. Adding O$_2$ to the Ar plasma during MgO growth alters the oxygen defect populations, leading to improved local tunneling characteristics such as a lower density of current hotspots and a lower tunnel current amp…
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The impact of oxygen vacancies on local tunneling properties across rf-sputtered MgO thin films was investigated by optical absorption spectroscopy and conducting atomic force microscopy. Adding O$_2$ to the Ar plasma during MgO growth alters the oxygen defect populations, leading to improved local tunneling characteristics such as a lower density of current hotspots and a lower tunnel current amplitude. We discuss a defect-based potential landscape across ultrathin MgO barriers.
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Submitted 22 November, 2010; v1 submitted 12 October, 2010;
originally announced October 2010.
