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The role of lattice thermal conductivity suppression by dopants from a holistic perspective
Authors:
Shengnan Dai,
Shijie Zhang,
Ye Sheng,
Erting Dong,
Sheng Sun,
Lili Xi,
G. Jeffrey Snyder,
Jinyang Xi,
Jiong Yang
Abstract:
Dopants play an important role in improving electrical and thermal transport. In the traditional perspective, a dopant suppresses lattice thermal conductivity kL by adding point defect (PD) scattering term to the phonon relaxation time, which has been adopted for decades. In this study, we propose an innovative perspective to solve the kL of defective systems-the holistic approach, i.e., treating…
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Dopants play an important role in improving electrical and thermal transport. In the traditional perspective, a dopant suppresses lattice thermal conductivity kL by adding point defect (PD) scattering term to the phonon relaxation time, which has been adopted for decades. In this study, we propose an innovative perspective to solve the kL of defective systems-the holistic approach, i.e., treating dopant and matrix as a holism. This approach allows us to handle the influences from defects explicitly by the calculations of defective systems, about their changed phonon dispersion, phonon-phonon and electron-phonon interaction, etc, due to the existence of dopants. The kL reduction between defective MxNb1-xFeSb (M=V, Ti) and NbFeSb is used as an example for the holistic approach, and comparable results with experiments are obtained. It is notable that light elemental dopants also induced the avoided-crossing behavior. It can be further rationalized by a one-dimensional atomic chain model. The mass and force constant imbalance generally generates the avoided-crossing phonons, mathematically in a similar way as the coefficients in traditional PD scattering, but along a different direction in kL reduction. Our work provides another perspective for understanding the mechanism of dopants influence in material's thermal transport.
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Submitted 29 June, 2024;
originally announced July 2024.
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Why does silicon have an indirect band gap?
Authors:
Emily Oliphant,
Veda Mantena,
Madison Brod,
G. Jeffrey Snyder,
Wenhao Sun
Abstract:
Density functional theory (DFT) is a powerful tool for predicting the electronic band structures of functional materials. However, it is often difficult to intuit how major band structure features$-$such as band gap magnitude, location of band extrema, effective masses, etc.$-$arise from the underlying crystal chemistry of a material. Band structure is represented in reciprocal space, but arises f…
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Density functional theory (DFT) is a powerful tool for predicting the electronic band structures of functional materials. However, it is often difficult to intuit how major band structure features$-$such as band gap magnitude, location of band extrema, effective masses, etc.$-$arise from the underlying crystal chemistry of a material. Band structure is represented in reciprocal space, but arises from the orbital and bonding interactions between atoms in real space. Here, we present a conceptual and computable framework to extract chemical bonding origins of DFT-calculated band structure features. As a key example, we explain here the indirect band gap of silicon, which profoundly impacts its properties for use in photovoltaics and electronics. Even in this basic semiconductor material, our approach leads to new insights to understand and engineer its conduction band minimum position. These calculation techniques can be broadly applied to reveal the crystal chemistry origins of electronic structure features in other optical, electronic, and magnetic materials.
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Submitted 9 April, 2024; v1 submitted 8 April, 2024;
originally announced April 2024.
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Mapping Thermoelectric Transport in a Multicomponent Alloy Space
Authors:
Ramya Gurunathan,
Suchismita Sarker,
Christopher K. H. Borg,
James Saal,
Logan Ward,
Apurva Mehta,
G. Jeffrey Snyder
Abstract:
Interest in high entropy alloy thermoelectric materials is predicated on achieving ultralow lattice thermal conductivity $κ\sub{L}$ through large compositional disorder. However, here we show that for a given mechanism, such as mass contrast phonon scattering, $κ\sub{L}$ will be minimized along the binary alloy with the highest mass contrast, such that adding an intermediate-mass atom to increase…
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Interest in high entropy alloy thermoelectric materials is predicated on achieving ultralow lattice thermal conductivity $κ\sub{L}$ through large compositional disorder. However, here we show that for a given mechanism, such as mass contrast phonon scattering, $κ\sub{L}$ will be minimized along the binary alloy with the highest mass contrast, such that adding an intermediate-mass atom to increase atomic disorder can increase thermal conductivity. Only when each component adds an independent scattering mechanism (such as adding strain fluctuation to an existing mass fluctuation) is there a benefit. In addition, both charge carriers and heat-carrying phonons are known to experience scattering due to alloying effects, leading to a trade-off in thermoelectric performance. We apply analytic transport models, based on perturbation and effective medium theories, to predict how alloy scattering will affect the thermal and electronic transport across the full compositional range of several pseudo-ternary and pseudo-quaternary alloy systems. To do so, we demonstrate a multicomponent extension to both thermal and electronic binary alloy scattering models based on the virtual crystal approximation. Finally, we show that common functional forms used in computational thermodynamics can be applied to this problem to further generalize the scattering behavior that is modeled.
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Submitted 3 May, 2022;
originally announced May 2022.
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Mode- and Space- Resolved Thermal Transport of Alloy Nanostructures
Authors:
S. Aria Hosseini,
Sarah Khanniche,
G. Jeffrey Snyder,
Samuel Huberman,
P. Alex Greaney,
Giuseppe Romano
Abstract:
Nanostructured semiconducting alloys obtain ultra-low thermal conductivity as a result of the scattering of phonons with a wide range of mean-free-paths (MFPs). In these materials, long-MFP phonons are scattered at the nanoscale boundaries whereas short-MFP high-frequency phonons are impeded by disordered point defects introduced by alloying. While this trend has been validated by simplified analy…
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Nanostructured semiconducting alloys obtain ultra-low thermal conductivity as a result of the scattering of phonons with a wide range of mean-free-paths (MFPs). In these materials, long-MFP phonons are scattered at the nanoscale boundaries whereas short-MFP high-frequency phonons are impeded by disordered point defects introduced by alloying. While this trend has been validated by simplified analytical and numerical methods, an ab-initio space-resolved approach remains elusive. To fill this gap, we calculate the thermal conductivity reduction in porous alloys by solving the mode-resolved Boltzmann transport equation for phonons using the finite-volume approach. We analyze different alloys, length-scales, concentrations, and temperatures, obtaining a very large reduction in the thermal conductivity over the entire configuration space. For example, a ~97% reduction is found for Al$_{0.8}$In$_{0.2}$As with 25% porosity. Furthermore, we employ these simulations to validate our recently introduced "Ballistic Correction Model" (BCM), an approach that estimates the effective thermal conductivity using the characteristic MFP of the bulk alloy and the length-scale of the material. The BCM is then used to provide guiding principles in designing alloy-based nanostructures. Notably, it elucidates how porous alloys such as Si$_{x}$Ge$_{1-x}$ obtain larger thermal conductivity reduction compared to porous Si or Ge, while also explaining why we should not expect similar behavior in alloys such as Al$_{x}$In$_{1-x}$As. By taking into account the synergy from scattering at different scales, we provide a route for the design of materials with ultra-low thermal conductivity.
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Submitted 24 March, 2022;
originally announced March 2022.
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Dopant-segregation to grain boundaries controls electrical conductivity of n-type NbCo(Pt)Sn half-Heusler alloy mediating thermoelectric performance
Authors:
Ting Luo,
Federico Serrano-Sánchez,
Hanna Bishara,
Siyuan Zhang,
Ruben Bueno Villoro,
Jimmy Jiahong Kuo,
Claudia Felser,
Christina Scheu,
G. Jeffrey Snyder,
James P. Best,
Gerhard Dehm,
Yuan Yu,
Dierk Raabe,
Chenguang Fu,
Baptiste Gault
Abstract:
Science-driven design of future thermoelectric materials requires a deep understanding of the fundamental relationships between microstructure and transport properties. Grain boundaries in polycrystalline materials influence the thermoelectric performance through the scattering of phonons or the trapping of electrons due to space-charge effects. Yet, the current lack of careful investigations on g…
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Science-driven design of future thermoelectric materials requires a deep understanding of the fundamental relationships between microstructure and transport properties. Grain boundaries in polycrystalline materials influence the thermoelectric performance through the scattering of phonons or the trapping of electrons due to space-charge effects. Yet, the current lack of careful investigations on grain boundary-associated features hinders further optimization of properties. Here, we study n-type NbCo1-xPtxSn half-Heusler alloys, which were synthesized by ball milling and spark plasma sintering (SPS). Post-SPS annealing was performed on one sample, leading to improved low-temperature electrical conductivity. The microstructure of both samples was examined by electron microscopy and atom probe tomography. The grain size increases from ~230 nm to ~2.38 μm upon annealing. Pt is found within grains and at grain boundaries, where it locally reduces the resistivity, as assessed by in situ four-point-probe electrical conductivity measurement. Our work showcases the correlation between microstructure and electrical conductivity, providing opportunities for future microstructural optimization by tuning the chemical composition at grain boundaries.
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Submitted 1 July, 2021;
originally announced July 2021.
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Comparison of the Tetrahedron Method to Smearing Methods for the Electronic Density of States
Authors:
M. Y. Toriyama,
A. M. Ganose,
M. Dylla,
S. Anand,
J. Park,
M. K. Brod,
J. Munro,
K. A. Persson,
A. Jain,
G. J. Snyder
Abstract:
The electronic density of states (DOS) highlights fundamental properties of materials that oftentimes dictate their properties, such as the band gap and Van Hove singularities. In this short note, we discuss how sharp features of the density of states can be obscured by smearing methods (such as the Gaussian and Fermi smearing methods) when calculating the DOS. While the common approach to reach a…
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The electronic density of states (DOS) highlights fundamental properties of materials that oftentimes dictate their properties, such as the band gap and Van Hove singularities. In this short note, we discuss how sharp features of the density of states can be obscured by smearing methods (such as the Gaussian and Fermi smearing methods) when calculating the DOS. While the common approach to reach a "converged" density of states of a material is to increase the discrete k-point mesh density, we show that the DOS calculated by smearing methods can appear to converge but not to the correct DOS. Employing the tetrahedron method for Brillouin zone integration resolves key features of the density of states far better than smearing methods.
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Submitted 4 March, 2021;
originally announced March 2021.
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Phonon Scattering in the Complex Strain Field of a Dislocation
Authors:
Yandong Sun,
Yanguang Zhou,
Ramya Gurunathan,
Jin-Yu Zhang,
Ming Hu,
Wei Liu,
Ben Xu,
G. Jeffrey Snyder
Abstract:
Strain engineering is critical to the performance enhancement of electronic and thermoelectric devices because of its influence on the material thermal conductivity. However, current experiments cannot probe the detailed physics of the phonon-strain interaction due to the complex, inhomogeneous, and long-distance features of the strain field in real materials. Dislocations provide us with an excel…
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Strain engineering is critical to the performance enhancement of electronic and thermoelectric devices because of its influence on the material thermal conductivity. However, current experiments cannot probe the detailed physics of the phonon-strain interaction due to the complex, inhomogeneous, and long-distance features of the strain field in real materials. Dislocations provide us with an excellent model to investigate these inhomogeneous strain fields. In this study, non-equilibrium molecular dynamics simulations were used to study the lattice thermal conductivity of PbTe under different strain status tuned by dislocation densities. The extended 1D McKelvey-Shockley flux method was used to analyze the frequency dependence of phonon scattering in the inhomogeneously strained regions of dislocations. A spatially resolved phonon dislocation scattering process was shown, where the unequal strain in different regions affected the magnitude and frequency-dependence of the scattering rate. Our study not only advances the knowledge of strain scattering of phonon propagation but offers fundamental guidance on optimizing thermal management by structure design.
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Submitted 26 January, 2021;
originally announced January 2021.
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Thermal Resistance at a Twist Boundary and Semicoherent Heterointerface
Authors:
Ramya Gurunathan,
Riley Hanus,
Samuel Graham,
Anupam Garg,
G. Jeffrey Snyder
Abstract:
Traditional models of interfacial phonon scattering, including the acoustic mismatch model (AMM) and diffuse mismatch model (DMM), take into account the bulk properties of the material surrounding the interface, but not the atomic structure and properties of the interface itself. Here, we derive a theoretical formalism for the phonon scattering at a dislocation grid, or two interpenetrating orthog…
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Traditional models of interfacial phonon scattering, including the acoustic mismatch model (AMM) and diffuse mismatch model (DMM), take into account the bulk properties of the material surrounding the interface, but not the atomic structure and properties of the interface itself. Here, we derive a theoretical formalism for the phonon scattering at a dislocation grid, or two interpenetrating orthogonal arrays of dislocations, as this is the most stable structure of both the symmetric twist boundary and semicoherent heterointerface. With this approach, we are able to separately examine the contribution to thermal resistance due to the step function change in acoustic properties and due to interfacial dislocation strain fields, which induces diffractive scattering. Both low-angle Si-Si twist boundaries and the Si-Ge heterointerfaces are considered here and compared to previous experimental and simulation results. This work indicates that scattering from misfit dislocation strain fields doubles the thermal boundary resistance of Si-Ge heterointerfaces compared to scattering due to acoustic mismatch alone. Scattering from grain boundary dislocation strain fields is predicted to dominate the thermal boundary resistance of Si-Si twist boundaries. This physical treatment can guide the thermal design of devices by quantifying the relative importance of interfacial strain fields, which can be engineered via fabrication and processing methods, versus acoustic mismatch, which is fixed for a given interface. Additionally, this approach captures experimental and simulation trends such as the dependence of thermal boundary resistance on the grain boundary angle and interfacial strain energy.
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Submitted 13 April, 2021; v1 submitted 4 January, 2021;
originally announced January 2021.
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When Band Convergence is Not Beneficial for Thermoelectrics
Authors:
Junsoo Park,
Max Dylla,
Yi Xia,
Max Wood,
G. Jeffrey Snyder,
Anubhav Jain
Abstract:
Band convergence is considered a clear benefit to thermoelectric performance because it increases the charge carrier concentration for a given Fermi level, which typically enhances charge conductivity while preserving the Seebeck coefficient. However, this advantage hinges on the assumption that interband scattering of carriers is weak or insignificant. With first-principles treatment of electron-…
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Band convergence is considered a clear benefit to thermoelectric performance because it increases the charge carrier concentration for a given Fermi level, which typically enhances charge conductivity while preserving the Seebeck coefficient. However, this advantage hinges on the assumption that interband scattering of carriers is weak or insignificant. With first-principles treatment of electron-phonon scattering in CaMg$_{2}$Sb$_{2}$-CaZn$_{2}$Sb$_{2}$ Zintl system and full Heusler Sr$_{2}$SbAu, we demonstrate that the benefit of band convergence can be intrinsically negated by interband scattering depending on the manner in which bands converge. In the Zintl alloy, band convergence does not improve weighted mobility or the density-of-states effective mass. We trace the underlying reason to the fact that the bands converge at one k-point, which induces strong interband scattering of both the deformation-potential and the polar-optical kinds. The case contrasts with band convergence at distant k-points (as in the full Heusler), which better preserves the single-band scattering behavior thereby successfully leading to improved performance. Therefore, we suggest that band convergence as thermoelectric design principle is best suited to cases in which it occurs at distant k-points.
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Submitted 26 May, 2021; v1 submitted 3 December, 2020;
originally announced December 2020.
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Probing the Phonon Mean Free Paths in Dislocation Core by Molecular Dynamics Simulation
Authors:
Yandong Sun,
Yanguang Zhou,
Ming Hu,
G. Jeffrey Snyder,
Ben Xu,
Wei Liu
Abstract:
Thermal management is extremely important for designing high-performance devices. The lattice thermal conductivity of materials is strongly dependent on the structural defects at different length scales, particularly point defects like vacancies, line defects like dislocations, and planar defects such as grain boundaries. Traditionally, the McKelvey-Shockley phonon Boltzmann's transport equation (…
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Thermal management is extremely important for designing high-performance devices. The lattice thermal conductivity of materials is strongly dependent on the structural defects at different length scales, particularly point defects like vacancies, line defects like dislocations, and planar defects such as grain boundaries. Traditionally, the McKelvey-Shockley phonon Boltzmann's transport equation (BTE) method combined with molecular dynamics simulations has been widely used to evaluate the phonon mean free paths (MFPs) in defective systems. However, this method can only provide the aggregate MFPs of the whole sample. It is, therefore, challenging to extract the MFPs in the different regions with different thermal properties. In this study, the 1D McKelvey-Shockley phonon BTE method was extended to model inhomogeneous materials, where the effect of defects on the phonon MFPs is explicitly obtained. Then, the method was used to study the phonon interactions with the core structure of an edge dislocation. The phonon MFPs in the dislocation core were obtained and consistent with the analytical model such that high frequency phonons are likely to be scattered in this area. This method not only advances the knowledge of phonon-dislocation scattering but also shows the potential to investigate phonon transport behaviors in more complicated materials.
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Submitted 26 January, 2021; v1 submitted 17 October, 2020;
originally announced October 2020.
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On the Dopability of Semiconductors and Governing Material Properties
Authors:
Anuj Goyal,
Prashun Gorai,
Shashwat Anand,
Eric S. Toberer,
G. Jeffrey Snyder,
Vladan Stevanovic
Abstract:
To be practical, semiconductors need to be doped. Sometimes, to nearly degenerate levels, e.g. in applications such as thermoelectric, transparent electronics or power electronics. However, many materials with finite band gaps are not dopable at all, while many others exhibit strong preference toward allowing either p- or n-type doping, but not both. In this work, we develop a model description of…
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To be practical, semiconductors need to be doped. Sometimes, to nearly degenerate levels, e.g. in applications such as thermoelectric, transparent electronics or power electronics. However, many materials with finite band gaps are not dopable at all, while many others exhibit strong preference toward allowing either p- or n-type doping, but not both. In this work, we develop a model description of semiconductor dopability and formulate design principles in terms of governing materials properties. Our approach, which builds upon the semiconductor defect theory applied to a suitably devised (tight-binding) model system, reveals analytic relationships between intrinsic materials properties and the semiconductor dopability, and elucidates the role and the insufficiency of previously suggested descriptors such as the absolute band edge positions. We validate our model against a number of classic binary semiconductors and discuss its extension to more complex chemistries and the utility in large-scale material searches.
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Submitted 18 May, 2020;
originally announced May 2020.
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Analytical Models of Phonon-Point Defect Scattering
Authors:
Ramya Gurunathan,
Riley Hanus,
Maxwell Dylla,
Ankita Katre,
G. Jeffrey Snyder
Abstract:
Point defects exist widely in engineering materials and are known to scatter vibrational modes to reduce thermal conductivity. The Klemens description of point defect scattering is the most prolific analytical model for this effect. This work reviews the essential physics of the model and compares its predictions to first principles results for isotope and alloy scattering, demonstrating the model…
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Point defects exist widely in engineering materials and are known to scatter vibrational modes to reduce thermal conductivity. The Klemens description of point defect scattering is the most prolific analytical model for this effect. This work reviews the essential physics of the model and compares its predictions to first principles results for isotope and alloy scattering, demonstrating the model as a useful materials design metric. A treatment of the scattering parameter ($Γ$) for a multiatomic lattice is recommended and compared to other treatments presented in literature, which have been at times misused to yield incomplete conclusions about the system's scattering mechanisms. Additionally, we demonstrate a reduced sensitivity of the model to the full phonon dispersion and discuss its origin. Finally, a simplified treatment of scattering in alloy systems with vacancies and interstitial defects is demonstrated to suitably describe the potent scattering strength of these off-stoichiometric defects.
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Submitted 8 October, 2019;
originally announced October 2019.
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Critical Behavior and Anisotropy in Single Crystal SrRuO$_3$
Authors:
G. Jeffrey Snyder
Abstract:
The magnetization of single crystal SrRuO3 is studied as a function of temperature along different crystallographic directions. The magnetocrystalline anisotropy and behavior near the critical transition temperature are analyzed in detail. The magnetization vs temperature is found to vary more like $T^2$ rather than $T^{3/2}$ expected for spin waves.
The magnetization of single crystal SrRuO3 is studied as a function of temperature along different crystallographic directions. The magnetocrystalline anisotropy and behavior near the critical transition temperature are analyzed in detail. The magnetization vs temperature is found to vary more like $T^2$ rather than $T^{3/2}$ expected for spin waves.
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Submitted 27 April, 2019;
originally announced April 2019.
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An Enormous Class of Double Half-Heusler Compounds with Low Thermal Conductivity
Authors:
Shashwat Anand,
Max Wood,
Chris Wolverton,
G. Jeffrey Snyder
Abstract:
Since their discovery around a century ago, the structure and chemistry of the multi-functional half-Heusler semiconductors have been studied extensively as three component systems. The elemental groups constituting these ternary compounds with the nominal formula XYZ are well established. From the very same set of well-known elements we explore a phase space of quaternary double ($X'X''Y_2Z_2$,…
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Since their discovery around a century ago, the structure and chemistry of the multi-functional half-Heusler semiconductors have been studied extensively as three component systems. The elemental groups constituting these ternary compounds with the nominal formula XYZ are well established. From the very same set of well-known elements we explore a phase space of quaternary double ($X'X''Y_2Z_2$, $X_2Y'Y''Z_2$, and $X_2Y_2Z'Z''$), triple ($X_2'X''Y_3Z_3$) and quadruple ($X_3'X''Y_4Z_4$) half-Heusler compositions which 10 times larger in size. Using a reliable, first-principles thermodynamics methodology on a selection of 347 novel compositions, we predict 127 new stable quaternary compounds, already more than the 89 reported almost exhaustively for ternary systems. Thermoelectric performance of the state-of-the-art ternary half-Heusler compounds are limited by their intrinsically high lattice thermal conductivity ($κ_{L}$). In comparison to ternary half-Heuslers, thermal transport in double half-Heuslers is dominated by low frequency phonon modes with smaller group velocities and limited by disorder scattering. The double half-Heusler composition Ti$_2$FeNiSb$_2$ was synthesized and confirmed to have a significantly lower lattice thermal conductivity (factor of 3 at room temperature) than TiCoSb, thereby providing a better starting point for thermoelectric efficiency optimization. We demonstrate a dependable strategy to assist the search for low thermal conductivity half-Heuslers and point towards a huge composition space for implementing it. Our findings can be extended for systematic discovery of other large families of multi-component intermetallic semiconductors.
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Submitted 28 January, 2019;
originally announced January 2019.
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Transport property analysis method for thermoelectric materials: material quality factor and the effective mass model
Authors:
Stephen Dongmin Kang,
G. Jeffrey Snyder
Abstract:
Thermoelectric semiconducting materials are often evaluated by their figure-of-merit, zT. However, by using zT as the metric for showing improvements, it is not immediately clear whether the improvement is from an enhancement of the inherent material property or from optimization of the carrier concentration. Here, we review the quality factor approach which allows one to separate these two contri…
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Thermoelectric semiconducting materials are often evaluated by their figure-of-merit, zT. However, by using zT as the metric for showing improvements, it is not immediately clear whether the improvement is from an enhancement of the inherent material property or from optimization of the carrier concentration. Here, we review the quality factor approach which allows one to separate these two contributions even without Hall measurements. We introduce practical methods that can be used without numerical integration. We discuss the underlying effective mass model behind this method and show how it can be further advanced to study complex band structures using the Seebeck effective mass. We thereby dispel the common misconception that the usefulness of effective band models is limited to single parabolic band materials.
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Submitted 2 January, 2018; v1 submitted 18 October, 2017;
originally announced October 2017.
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Low Effective Mass Leading to High Thermoelectric Performance
Authors:
Yanzhong Pei,
Aaron D. LaLonde,
Heng Wang,
G. Jeffrey Snyder
Abstract:
High Seebeck coefficient by creating large density of state (DOS) around the Fermi level through either electronic structure modification or manipulating nanostructures, is commonly considered as a route to advanced thermoelectrics. However, large density of state due to flat bands leads to large effective mass, which results in a simultaneous decrease of mobility. In fact, the net effect of high…
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High Seebeck coefficient by creating large density of state (DOS) around the Fermi level through either electronic structure modification or manipulating nanostructures, is commonly considered as a route to advanced thermoelectrics. However, large density of state due to flat bands leads to large effective mass, which results in a simultaneous decrease of mobility. In fact, the net effect of high effective mass is a lower thermoelectric figure of merit when the carriers are predominantly scattered by acoustic phonons according to the deformation potential theory of Bardeen-Shockley. We demonstrate the beneficial effect of light effective mass leading to high power factor in n-type thermoelectric PbTe, where doping and temperature can be used to tune the effective mass. This clear demonstration of the deformation potential theory to thermoelectrics shows that the guiding principle for band structure engineering should be low effective mass along the transport direction.
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Submitted 22 November, 2011;
originally announced November 2011.
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Improved Thermoelectric Cooling Based on the Thomson Effect
Authors:
G. Jeffrey Snyder,
Raghav Khanna,
Eric S. Toberer,
Nicholas A. Heinz,
Wolfgang Seifert
Abstract:
Traditional thermoelectric Peltier coolers exhibit a cooling limit which is primarily determined by the figure of merit, zT. Rather than a fundamental thermodynamic limit, this bound can be traced to the difficulty of maintaining thermoelectric compatibility. Self-compatibility locally maximizes the cooler's coefficient of performance for a given zT and can be achieved by adjusting the relative ra…
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Traditional thermoelectric Peltier coolers exhibit a cooling limit which is primarily determined by the figure of merit, zT. Rather than a fundamental thermodynamic limit, this bound can be traced to the difficulty of maintaining thermoelectric compatibility. Self-compatibility locally maximizes the cooler's coefficient of performance for a given zT and can be achieved by adjusting the relative ratio of the thermoelectric transport properties that make up zT. In this study, we investigate the theoretical performance of thermoelectric coolers that maintain self-compatibility across the device. We find such a device behaves very differently from a Peltier cooler, and term self-compatible coolers "Thomson coolers" when the Fourier heat divergence is dominated by the Thomson, as opposed to the Joule, term. A Thomson cooler requires an exponentially rising Seebeck coefficient with increasing temperature, while traditional Peltier coolers, such as those used commercially, have comparatively minimal change in Seebeck coefficient with temperature. When reasonable material property bounds are placed on the thermoelectric leg, the Thomson cooler is predicted to achieve approximately twice the maximum temperature drop of a traditional Peltier cooler with equivalent figure of merit (zT). We anticipate the development of Thomson coolers will ultimately lead to solid state cooling to cryogenic temperatures.
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Submitted 16 June, 2012; v1 submitted 22 November, 2011;
originally announced November 2011.
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Entropic Stabilization and Retrograde Solubility in Zn4Sb3
Authors:
Gregory S. Pomrehn,
Eric S. Toberer,
G. Jeffrey Snyder,
Axel van de Walle
Abstract:
Zn4Sb3 is shown to be entropically stabilized versus decomposition to Zn and ZnSb though the effects of configurational disorder and phonon free energy. Single phase stability is predicted for a range of compositions and temperatures. Retrograde solubility of Zn is predicted on the two-phase boundary region between Zn4Sb3 and Zn. The complex temperature dependent solubility can be used to explain…
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Zn4Sb3 is shown to be entropically stabilized versus decomposition to Zn and ZnSb though the effects of configurational disorder and phonon free energy. Single phase stability is predicted for a range of compositions and temperatures. Retrograde solubility of Zn is predicted on the two-phase boundary region between Zn4Sb3 and Zn. The complex temperature dependent solubility can be used to explain the variety of nanoparticle formation observed in the system: formation of ZnSb on the Sb rich side, Zn on the far Zn rich side and nano-void formation due to Zn precipitates being reabsorbed at lower temperatures.
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Submitted 22 October, 2010;
originally announced October 2010.
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Evidence of magnetization-dependent polaron formation in La$_{1-x}A_x$MnO$_3$, $A$=Ca, Pb
Authors:
C. H. Booth,
F. Bridges,
G. J. Snyder,
T. Geballe
Abstract:
X-ray-absorption fine-structure measurements at the Mn $K$-edge as a function of temperature were performed on samples of La$_{1-x}$Ca$_x$MnO$_3$ and La$_{0.67}$Pb$_{0.33}$MnO$_3$. All samples have a metal-insulator (MI) transition near the ferromagnetic transition, except the Ca$_{0.5}$ sample, which does not have a MI transition. Near $T_c$ for the MI samples, the Debye-Waller $σ^2$ for the Mn…
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X-ray-absorption fine-structure measurements at the Mn $K$-edge as a function of temperature were performed on samples of La$_{1-x}$Ca$_x$MnO$_3$ and La$_{0.67}$Pb$_{0.33}$MnO$_3$. All samples have a metal-insulator (MI) transition near the ferromagnetic transition, except the Ca$_{0.5}$ sample, which does not have a MI transition. Near $T_c$ for the MI samples, the Debye-Waller $σ^2$ for the Mn-O atom-pair increases rapidly with temperature. This non-thermal disorder is mostly along the direction of the neighboring oxygens. These results strongly suggest small polarons which are delocalized by a finite magnetization.
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Submitted 28 July, 1996;
originally announced July 1996.
