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Single-photon Emission from an Acoustically-driven Lateral Light-emitting Diode
Authors:
Tzu-Kan Hsiao,
Antonio Rubino,
Yousun Chung,
Seok-Kyun Son,
Hangtian Hou,
Jorge Pedrós,
Ateeq Nasir,
Gabriel Éthier-Majcher,
Megan J. Stanley,
Richard T. Phillips,
Thomas A. Mitchell,
Jonathan P. Griffiths,
Ian Farrer,
David A. Ritchie,
Christopher J. B. Ford
Abstract:
Single-photon sources are essential building blocks in quantum photonic networks, where quantum-mechanical properties of photons are utilised to achieve quantum technologies such as quantum cryptography and quantum computing. Most conventional solid-state single-photon sources are based on single emitters such as self-assembled quantum dots, which are created at random locations and require spectr…
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Single-photon sources are essential building blocks in quantum photonic networks, where quantum-mechanical properties of photons are utilised to achieve quantum technologies such as quantum cryptography and quantum computing. Most conventional solid-state single-photon sources are based on single emitters such as self-assembled quantum dots, which are created at random locations and require spectral filtering. These issues hinder the integration of a single-photon source into a scaleable photonic quantum network for applications such as on-chip photonic quantum processors. In this work, using only regular lithography techniques on a conventional GaAs quantum well, we realise an electrically triggered single-photon source with a GHz repetition rate and without the need for spectral filtering. In this device, a single electron is carried in the potential minimum of a surface acoustic wave (SAW) and is transported to a region of holes to form an exciton. The exciton then decays and creates a single photon in a lifetime of ~ 100ps. This SAW-driven electroluminescence (EL) yields photon antibunching with $g^{(2)}(0) = 0.39 \pm 0.05$, which satisfies the common criterion for a single-photon source $g^{(2)}(0) < 0.5$. Furthermore, we estimate that if a photon detector receives a SAW-driven EL signal within one SAW period, this signal has a 79%-90% chance of being a single photon. This work shows that a single-photon source can be made by combining single-electron transport and a lateral n-i-p junction. This approach makes it possible to create multiple synchronised single-photon sources at chosen positions with photon energy determined by quantum-well thickness. Compared with conventional quantum-dot-based single-photon sources, this device may be more suitable for an on-chip integrated photonic quantum network.
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Submitted 10 January, 2019;
originally announced January 2019.
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Controlling the coherence of a diamond spin qubit through strain engineering
Authors:
Young-Ik Sohn,
Srujan Meesala,
Benjamin Pingault,
Haig A. Atikian,
Jeffrey Holzgrafe,
Mustafa Gundogan,
Camille Stavrakas,
Megan J. Stanley,
Alp Sipahigil,
Joonhee Choi,
Mian Zhang,
Jose L. Pacheco,
John Abraham,
Edward Bielejec,
Mikhail D. Lukin,
Mete Atature,
Marko Loncar
Abstract:
The uncontrolled interaction of a quantum system with its environment is detrimental for quantum coherence. In the context of solid-state qubits, techniques to mitigate the impact of fluctuating electric and magnetic fields from the environment are well-developed. In contrast, suppression of decoherence from thermal lattice vibrations is typically achieved only by lowering the temperature of opera…
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The uncontrolled interaction of a quantum system with its environment is detrimental for quantum coherence. In the context of solid-state qubits, techniques to mitigate the impact of fluctuating electric and magnetic fields from the environment are well-developed. In contrast, suppression of decoherence from thermal lattice vibrations is typically achieved only by lowering the temperature of operation. Here, we use a nano-electro-mechanical system (NEMS) to mitigate the effect of thermal phonons on a solid-state quantum emitter without changing the system temperature. We study the silicon-vacancy (SiV) colour centre in diamond which has optical and spin transitions that are highly sensitive to phonons. First, we show that its electronic orbitals are highly susceptible to local strain, leading to its high sensitivity to phonons. By controlling the strain environment, we manipulate the electronic levels of the emitter to probe, control, and eventually, suppress its interaction with the thermal phonon bath. Strain control allows for both an impressive range of optical tunability and significantly improved spin coherence. Finally, our findings indicate that it may be possible to achieve strong coupling between the SiV spin and single phonons, which can lead to the realisation of phonon-mediated quantum gates and nonlinear quantum phononics.
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Submitted 31 January, 2018; v1 submitted 12 June, 2017;
originally announced June 2017.
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Phase-tuned entangled state generation between distant spin qubits
Authors:
R. Stockill,
M. J. Stanley,
L. Huthmacher,
E. Clarke,
M. Hugues,
A. J. Miller,
C. Matthiesen,
C. Le Gall,
M. Atatüre
Abstract:
Quantum entanglement between distant qubits is an important feature of quantum networks. Distribution of entanglement over long distances can be enabled through coherently interfacing qubit pairs via photonic channels. Here, we report the realization of optically generated quantum entanglement between electron spin qubits confined in two distant semiconductor quantum dots. The protocol relies on s…
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Quantum entanglement between distant qubits is an important feature of quantum networks. Distribution of entanglement over long distances can be enabled through coherently interfacing qubit pairs via photonic channels. Here, we report the realization of optically generated quantum entanglement between electron spin qubits confined in two distant semiconductor quantum dots. The protocol relies on spin-photon entanglement in the trionic $Λ$-system and quantum erasure of the Raman-photon path. The measurement of a single Raman photon is used to project the spin qubits into a joint quantum state with an interferometrically stabilized and tunable relative phase. We report an average Bell-state fidelity for $|ψ^{(+)}\rangle$ and $|ψ^{(-)}\rangle$ states of $61.6\pm2.3\%$ and a record-high entanglement generation rate of 7.3 kHz between distant qubits.
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Submitted 11 February, 2017;
originally announced February 2017.
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Dynamics of a mesoscopic nuclear spin ensemble interacting with an optically driven electron spin
Authors:
Megan J. Stanley,
Clemens Matthiesen,
Jack Hansom,
Claire Le Gall,
Carsten H. H. Schulte,
Edmund Clarke,
Mete Atatüre
Abstract:
The ability to discriminate between simultaneously occurring noise sources in the local environment of semiconductor InGaAs quantum dots, such as electric and magnetic field fluctuations, is key to understanding their respective dynamics and their effect on quantum dot coherence properties. We present a discriminatory approach to all-optical sensing based on two-color resonance fluorescence of a q…
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The ability to discriminate between simultaneously occurring noise sources in the local environment of semiconductor InGaAs quantum dots, such as electric and magnetic field fluctuations, is key to understanding their respective dynamics and their effect on quantum dot coherence properties. We present a discriminatory approach to all-optical sensing based on two-color resonance fluorescence of a quantum dot charged with a single electron. Our measurements show that local magnetic field fluctuations due to nuclear spins in the absence of an external magnetic field are described by two correlation times, both in the microsecond regime. The nuclear spin bath dynamics show a strong dependence on the strength of resonant probing, with correlation times increasing by a factor of four as the optical transition is saturated. We interpret the behavior as motional averaging of both the Knight field of the resident electron spin and the hyperfine-mediated nuclear spin-spin interaction due to optically-induced electron spin flips.
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Submitted 17 November, 2014; v1 submitted 27 August, 2014;
originally announced August 2014.
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Full counting statistics of quantum dot resonance fluorescence
Authors:
Clemens Matthiesen,
Megan J. Stanley,
Maxime Hugues,
Edmund Clarke,
Mete Atature
Abstract:
The electronic energy levels and optical transitions of a semiconductor quantum dot are subject to dynamics within the solid-state environment. In particular, fluctuating electric fields due to nearby charge traps or other quantum dots shift the transition frequencies via the Stark effect. The environment dynamics are mapped directly onto the fluorescence under resonant excitation and diminish the…
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The electronic energy levels and optical transitions of a semiconductor quantum dot are subject to dynamics within the solid-state environment. In particular, fluctuating electric fields due to nearby charge traps or other quantum dots shift the transition frequencies via the Stark effect. The environment dynamics are mapped directly onto the fluorescence under resonant excitation and diminish the prospects of quantum dots as sources of indistinguishable photons in optical quantum computing. Here, we present an analysis of resonance fluorescence fluctuations based on photon counting statistics which captures the underlying time-averaged electric field fluctuations of the local environment. The measurement protocol avoids dynamic feedback on the electric environment and the dynamics of the quantum dot's nuclear spin bath by virtue of its resonant nature and by keeping experimental control parameters such as excitation frequency and external fields constant throughout. The method introduced here is experimentally undemanding.
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Submitted 6 May, 2014;
originally announced May 2014.
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From the artificial atom to the Kondo-Anderson model: orientation dependent magneto-photoluminescence of charged excitons in InAs quantum dots
Authors:
B. Van Hattem,
P. Corfdir,
P. Brereton,
P. Pearce,
A. M. Graham,
M. J. Stanley,
M. Hugues,
M. Hopkinson,
R. T. Phillips
Abstract:
We present a magneto-photoluminescence study on neutral and charged excitons confined to InAs/GaAs quantum dots. Our investigation relies on a confocal microscope that allows arbitrary tuning of the angle between the applied magnetic field and the sample growth axis. First, from experiments on neutral excitons and trions, we extract the in-plane and on-axis components of the Landé tensor for elect…
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We present a magneto-photoluminescence study on neutral and charged excitons confined to InAs/GaAs quantum dots. Our investigation relies on a confocal microscope that allows arbitrary tuning of the angle between the applied magnetic field and the sample growth axis. First, from experiments on neutral excitons and trions, we extract the in-plane and on-axis components of the Landé tensor for electrons and holes in the s-shell. Then, based on the doubly negatively charged exciton magneto-photoluminescence we show that the p-electron wave function spreads significantly into the GaAs barriers. We also demonstrate that the p-electron g-factor depends on the presence of a hole in the s-shell. The magnetic field dependence of triply negatively charged excitons photoluminescence exhibits several anticrossings, as a result of coupling between the quantum dot electronic states and the wetting layer. Finally, we discuss how the system evolves from a Kondo-Anderson exciton description to the artificial atom model when the orientation of the magnetic field goes from Faraday to Voigt geometry.
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Submitted 24 May, 2013; v1 submitted 26 February, 2013;
originally announced February 2013.
