Structure and stability of carbon nitrides: ring opening induced photoelectrochemical degradation
Authors:
Florentina Iuliana Maxim,
Eugenia Tanasa,
Bogdan Mitrea,
Cornelia Diac,
Tomas Skala,
Liviu Cristian Tanase,
Adrian Ciocanea,
Stefan Antohe,
Eugeniu Vasile,
Serban N. Stamatin
Abstract:
A constant increase in the need of clean energy demands more innovation from the research community. Active and stable materials that can make use of the solar radiation to promote different reactions are the cornerstone of emerging technologies. Polymeric carbon nitrides that harvest solar radiation to drive electrochemical reactions are considered solid candidates. In this respect, polymeric car…
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A constant increase in the need of clean energy demands more innovation from the research community. Active and stable materials that can make use of the solar radiation to promote different reactions are the cornerstone of emerging technologies. Polymeric carbon nitrides that harvest solar radiation to drive electrochemical reactions are considered solid candidates. In this respect, polymeric carbon nitrides were prepared by the thermal polycondensation of melamine. As-obtained materials were characterized by synchrotron radiation and lab-based techniques. The electron band structure was fully characterized by a combined electrochemical optoelectronic study. Electron microscopy studies before and after the photoelectrochemical experiments showed morphological and structure degradation. The work at-hand concludes that polymeric carbon nitrides are prone to photoelectrochemical degradation at high overpotentials.
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Submitted 31 March, 2021;
originally announced March 2021.
Low Temperature Growth of Graphene on Semiconductor
Authors:
Håkon I. Røst,
Rajesh K. Chellappan,
Frode S. Strand,
Antonija Grubišić-Čabo,
Benjamen P. Reed,
Mauricio J. Prieto,
Liviu C. Tǎnase,
Lucas de Souza Caldas,
Thipusa Wongpinij,
Chanan Euaruksakul,
Thomas Schmidt,
Anton Tadich,
Bruce C. C. Cowie,
Zheshen Li,
Simon P. Cooil,
Justin W. Wells
Abstract:
The industrial realization of graphene has so far been limited by challenges related to the quality, reproducibility, and high process temperatures required to manufacture graphene on suitable substrates. We demonstrate that epitaxial graphene can be grown on transition metal treated 6H-SiC(0001) surfaces, with an onset of graphitization starting around $450-500^\circ\text{C}$. From the chemical r…
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The industrial realization of graphene has so far been limited by challenges related to the quality, reproducibility, and high process temperatures required to manufacture graphene on suitable substrates. We demonstrate that epitaxial graphene can be grown on transition metal treated 6H-SiC(0001) surfaces, with an onset of graphitization starting around $450-500^\circ\text{C}$. From the chemical reaction between SiC and thin films of Fe or Ru, $\text{sp}^{3}$ carbon is liberated from the SiC crystal and converted to $\text{sp}^{2}$ carbon at the surface. The quality of the graphene is demonstrated using angle-resolved photoemission spectroscopy and low-energy electron diffraction. Furthermore, the orientation and placement of the graphene layers relative to the SiC substrate is verified using angle-resolved absorption spectroscopy and energy-dependent photoelectron spectroscopy, respectively. With subsequent thermal treatments to higher temperatures, a steerable diffusion of the metal layers into the bulk SiC is achieved. The result is graphene supported on magnetic silicide or optionally, directly on semiconductor, at temperatures ideal for further large-scale processing into graphene based device structures.
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Submitted 27 November, 2020;
originally announced November 2020.
