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All-electric spin device operation using the Weyl semimetal, WTe$_2$, at room temperature
Authors:
Kosuke Ohnishi,
Motomi Aoki,
Ryo Ohshima,
Ei Shigematsu,
Yuichiro Ando,
Taishi Takenobu,
Masashi Shiraishi
Abstract:
Topological quantum materials (TQMs) possess abundant and attractive spin physics, and a Weyl semimetal is the representative material because of the generation of spin polarization that is available for spin devices due to fictitious Weyl monopoles at the edge of the Weyl node. Meanwhile, a Weyl semimetal allows the other but unexplored spin polarization due to local symmetry breaking. Here, we r…
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Topological quantum materials (TQMs) possess abundant and attractive spin physics, and a Weyl semimetal is the representative material because of the generation of spin polarization that is available for spin devices due to fictitious Weyl monopoles at the edge of the Weyl node. Meanwhile, a Weyl semimetal allows the other but unexplored spin polarization due to local symmetry breaking. Here, we report all-electric spin device operation using a type-II Weyl semimetal, WTe$_2$, at room temperature. The polarization of spins propagating in the all-electric device is perpendicular to the WTe$_2$ plane, which is ascribed to local in-plane symmetry breaking in WTe$_2$, yielding the spin polarization creation of propagating charged carriers, namely, the spin-polarized state creation from the non-polarized state. Systematic control experiments unequivocally negate unexpected artifacts, such as the anomalous Hall effect, the anisotropic magnetoresistance etc. Creation of all-electric spin devices made of TQMs and their operation at room temperature can pave a new pathway for novel spin devices made of TQMs resilient to thermal fluctuation.
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Submitted 22 August, 2022;
originally announced August 2022.
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Non-Fermi-liquid behavior and doping asymmetry in an organic Mott insulator interface
Authors:
Yoshitaka Kawasugi,
Kazuhiro Seki,
Jiang Pu,
Taishi Takenobu,
Seiji Yunoki,
Hiroshi M. Yamamoto,
Reizo Kato
Abstract:
High-$T_{\rm C}$ superconductors show anomalous transport properties in their normal states, such as the bad-metal and pseudogap behaviors. To discuss their origins, it is important to speculate whether these behaviors are material-dependent or universal phenomena in the proximity of the Mott transition, by investigating similar but different material systems. An organic Mott transistor is suitabl…
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High-$T_{\rm C}$ superconductors show anomalous transport properties in their normal states, such as the bad-metal and pseudogap behaviors. To discuss their origins, it is important to speculate whether these behaviors are material-dependent or universal phenomena in the proximity of the Mott transition, by investigating similar but different material systems. An organic Mott transistor is suitable for this purpose owing to the adjacency between the two-dimensional Mott insulating and superconducting states, simple electronic properties, and high doping/bandwidth tunability in the same sample. Here we report the temperature dependence of the transport properties under electron and hole doping in an organic Mott electric-double-layer transistor. At high temperatures, the bad-metal behavior widely appears except at half filling regardless of the doping polarity. At lower temperatures, the pseudogap behavior is observed only under hole doping, while the Fermi-liquid-like behavior is observed under electron doping. The bad-metal behavior seems a universal high-energy scale phenomenon, while the pseudogap behavior is based on lower energy scale physics that can be influenced by details of the band structure.
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Submitted 9 September, 2019;
originally announced September 2019.
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Two-dimensional ground-state mapping of a Mott-Hubbard system in a flexible field-effect device
Authors:
Yoshitaka Kawasugi,
Kazuhiro Seki,
Satoshi Tajima,
Jiang Pu,
Taishi Takenobu,
Seiji Yunoki,
Hiroshi M. Yamamoto,
Reizo Kato
Abstract:
A Mott insulator sometimes induces unconventional superconductivity in its neighbors when doped and/or pressurized. Because the phase diagram should be strongly related to the microscopic mechanism of the superconductivity, it is important to obtain the global phase diagram surrounding the Mott insulating state. However, the parameter available for controlling the ground state of most Mott insulat…
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A Mott insulator sometimes induces unconventional superconductivity in its neighbors when doped and/or pressurized. Because the phase diagram should be strongly related to the microscopic mechanism of the superconductivity, it is important to obtain the global phase diagram surrounding the Mott insulating state. However, the parameter available for controlling the ground state of most Mott insulating materials is one-dimensional owing to technical limitations. Here we present a two-dimensional ground-state mapping for a Mott insulator using an organic field-effect device by simultaneously tuning the bandwidth and bandfilling. The observed phase diagram showed many unexpected features such as an abrupt first-order superconducting transition under electron doping, a recurrent insulating phase in the heavily electron-doped region, and a nearly constant superconducting transition temperature in a wide parameter range. These results are expected to contribute toward elucidating one of the standard solutions for the Mott-Hubbard model. Theoretical calculations reproducing the main features of our experimental results have also been conducted.
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Submitted 10 May, 2019;
originally announced May 2019.
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Photodetection in p-n junctions formed by electrolyte-gated transistors of two-dimensional crystals
Authors:
Daichi Kozawa,
Jiang Pu,
Ryo Shimizu,
Shota Kimura,
Ming-Hui Chiu,
Keiichiro Matsuki,
Yoshifumi Wada,
Tomo Sakanoue,
Yoshihiro Iwasa,
Lain-Jong Li,
Taishi Takenobu
Abstract:
Transition metal dichalcogenide (TMDC) monolayers have attracted much attention due to their strong light absorption and excellent electronic properties. These advantages make this type of two-dimensional crystal a promising one for optoelectronic device applications. In the case of photoelectric conversion devices such as photodetectors and photovoltaic cells, p-n junctions are one of the most im…
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Transition metal dichalcogenide (TMDC) monolayers have attracted much attention due to their strong light absorption and excellent electronic properties. These advantages make this type of two-dimensional crystal a promising one for optoelectronic device applications. In the case of photoelectric conversion devices such as photodetectors and photovoltaic cells, p-n junctions are one of the most important devices. Here, we demonstrate photodetection with WSe2 monolayer films. We prepare the electrolyte-gated ambipolar transistors and electrostatic p-n junctions are formed by the electrolyte-gating technique at 270 K. These p-n junctions are cooled down to fix the ion motion (and p-n junctions) and we observed the reasonable photocurrent spectra without the external bias, indicating the formation of p-n junctions. Very interestingly, two-terminal devices exhibit higher photoresponsivity than that of three-terminal ones, suggesting the formation of highly balanced anion and cation layers. The maximum photoresponsivity reaches 5 mA/W in resonance with the first excitonic peak. Our technique provides important evidence for optoelectronics in atomically thin crystals.
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Submitted 4 November, 2016;
originally announced November 2016.
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Electron-hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator
Authors:
Yoshitaka Kawasugi,
Kazuhiro Seki,
Yusuke Edagawa,
Yoshiaki Sato,
Jiang Pu,
Taishi Takenobu,
Seiji Yunoki,
Hiroshi M. Yamamoto,
Reizo Kato
Abstract:
It is widely recognised that the effect of doping into a Mott insulator is complicated and unpredictable, as can be seen by examining the Hall coefficient in high $T_{\rm c}$ cuprates. The doping effect, including the electron-hole doping asymmetry, may be more straightforward in doped organic Mott insulators owing to their simple electronic structures. Here we investigate the doping asymmetry of…
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It is widely recognised that the effect of doping into a Mott insulator is complicated and unpredictable, as can be seen by examining the Hall coefficient in high $T_{\rm c}$ cuprates. The doping effect, including the electron-hole doping asymmetry, may be more straightforward in doped organic Mott insulators owing to their simple electronic structures. Here we investigate the doping asymmetry of an organic Mott insulator by carrying out electric-double-layer transistor measurements and using cluster perturbation theory. The calculations predict that strongly anisotropic suppression of the spectral weight results in the Fermi arc state under hole doping, while a relatively uniform spectral weight results in the emergence of a non-interacting-like Fermi surface in the electron-doped state. In accordance with the calculations, the experimentally observed Hall coefficients and resistivity anisotropy correspond to the pocket formed by the Fermi arcs under hole doping and to the non-interacting Fermi surface under electron doping.
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Submitted 1 July, 2016; v1 submitted 29 June, 2016;
originally announced June 2016.
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Gate-tunable spin-charge conversion and a role of spin-orbit interaction in graphene
Authors:
S. Dushenko,
H. Ago,
K. Kawahara,
T. Tsuda,
S. Kuwabata,
T. Takenobu,
T. Shinjo,
Y. Ando,
M. Shiraishi
Abstract:
The small spin-orbit interaction of carbon atoms in graphene promises a long spin diffusion length and potential to create a spin field-effect transistor. However, for this reason, graphene was largely overlooked as a possible spin-charge conversion material. We report electric gate tuning of the spin-charge conversion voltage signal in a single-layer graphene. Using spin pumping from yttrium iron…
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The small spin-orbit interaction of carbon atoms in graphene promises a long spin diffusion length and potential to create a spin field-effect transistor. However, for this reason, graphene was largely overlooked as a possible spin-charge conversion material. We report electric gate tuning of the spin-charge conversion voltage signal in a single-layer graphene. Using spin pumping from yttrium iron garnet ferrimagnetic insulator and ionic liquid top gate we determined that the inverse spin Hall effect is the dominant spin-charge conversion mechanism in a single-layer graphene. From the gate dependence of the electromotive force we showed dominance of the intrinsic over Rashba spin-orbit interaction: a long-standing question in graphene research.
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Submitted 8 April, 2016;
originally announced April 2016.
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Enhanced Photovoltaic Performances of Graphene/Si Solar Cells by Insertion of an MoS2 Thin Film
Authors:
Yuka Tsuboi,
Feijiu Wang,
Daichi Kozawa,
Kazuma Funahashi,
Shinichiro Mouri,
Yuhei Miyauchi,
Taishi Takenobu,
Kazunari Matsuda
Abstract:
Atomically thin layered materials such as graphene and transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic devices because of their high carrier-transporting properties and strong light-matter interactions. Here, we demonstrated that the photovoltaic performances of graphene/Si Schottky junction solar cells were significantly improved by inserting a chemi…
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Atomically thin layered materials such as graphene and transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic devices because of their high carrier-transporting properties and strong light-matter interactions. Here, we demonstrated that the photovoltaic performances of graphene/Si Schottky junction solar cells were significantly improved by inserting a chemical vapor deposition (CVD)-grown, large MoS2 thin-film layer. This layer functions as an effective passivation and electron-blocking/hole-transporting layer. We also demonstrated that the photovoltaic properties are enhanced with increasing number of graphene layers and decreasing thickness of the MoS2 layer. A high photovoltaic conversion efficiency of 11.1% was achieved with the optimized trilayer-graphene/MoS2/n-Si solar cell.
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Submitted 18 March, 2015;
originally announced March 2015.
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Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors
Authors:
Leiqiang Chu,
Hennrik Schmidt,
Jiang Pu,
Shunfeng Wang,
Barbaros Özyilmaz,
Taishi Takenobu,
Goki Eda
Abstract:
Charge transport in MoS2 in the low carrier density regime is dominated by trap states and band edge disorder. The intrinsic transport properties of MoS2 emerge in the high density regime where conduction occurs via extended states. Here, we investigate the transport properties of mechanically exfoliated mono-, bi-, and trilayer MoS2 sheets over a wide range of carrier densities realized by a comb…
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Charge transport in MoS2 in the low carrier density regime is dominated by trap states and band edge disorder. The intrinsic transport properties of MoS2 emerge in the high density regime where conduction occurs via extended states. Here, we investigate the transport properties of mechanically exfoliated mono-, bi-, and trilayer MoS2 sheets over a wide range of carrier densities realized by a combination of ion gel top gate and SiO2 back gate which allows us to achieve high charge carrier (>10^13) density. We discuss the gating properties of the devices as a function of layer thickness and demonstrate resistivities of as low as 1 kΩ for monolayer and 420Ω for bilayer devices at 10 K. We show that from the capacitive coupling of the two gates, quantum capacitance can be roughly estimated to be on the order of 1 μF/cm^2 for all devices studied. Temperature dependence of the carrier mobility in the high density regime indicates that short-range scatterers limit charge transport at low temperatures.
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Submitted 9 July, 2014;
originally announced July 2014.
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Large-Area Aiming Synthesis of WSe2 Monolayers
Authors:
Jing-Kai Huang,
Jiang Pu,
Chih-Piao Chuu,
Chang-Lung Hsu,
Ming-Hui Chiu,
Zhen-Yu Juang,
Yong-Huang Chang,
Wen-Hao Chang,
Yoshihiro Iwasa,
Mei-Ying Chou,
Taishi Takenobu,
Lain-Jong Li
Abstract:
The monolayer transition metal dichalcogenides have recently attracted much attention owing to their potential in valleytronics, flexible and low-power electronics and optoelectronic devices. Recent reports have demonstrated the growth of large-size 2-dimensional MoS2 layers by the sulfurization of molybdenum oxides. However, the growth of transition metal selenide monolayer has still been a chall…
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The monolayer transition metal dichalcogenides have recently attracted much attention owing to their potential in valleytronics, flexible and low-power electronics and optoelectronic devices. Recent reports have demonstrated the growth of large-size 2-dimensional MoS2 layers by the sulfurization of molybdenum oxides. However, the growth of transition metal selenide monolayer has still been a challenge. Here we report that the introduction of hydrogen in the reaction chamber helps to activate the selenization of WO3, where large-size WSe2 monolayer flakes or thin films can be successfully grown.
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Submitted 10 December, 2013; v1 submitted 27 April, 2013;
originally announced April 2013.
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Quantitative analysis of electronic transport through weakly-coupled metal/organic interfaces
Authors:
A. S. Molinari,
I. Gutierrez Lezama,
P. Parisse,
T. Takenobu,
Y. Iwasa,
A. F. Morpurgo
Abstract:
Using single-crystal transistors, we have performed a systematic experimental study of electronic transport through oxidized copper/rubrene interfaces as a function of temperature and bias. We find that the measurements can be reproduced quantitatively in terms of the thermionic emission theory for Schottky diodes, if the effect of the bias-induced barrier lowering is included. Our analysis emph…
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Using single-crystal transistors, we have performed a systematic experimental study of electronic transport through oxidized copper/rubrene interfaces as a function of temperature and bias. We find that the measurements can be reproduced quantitatively in terms of the thermionic emission theory for Schottky diodes, if the effect of the bias-induced barrier lowering is included. Our analysis emphasizes the role of the coupling between metal and molecules, which in our devices is weak due to the presence of an oxide layer at the surface of the copper electrodes.
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Submitted 15 February, 2008;
originally announced February 2008.
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Ferroelectric polarization flop in a frustrated magnet MnWO$_4$ induced by magnetic fields
Authors:
K. Taniguchi,
N. Abe,
T. Takenobu,
Y. Iwasa,
T. Arima
Abstract:
The relationship between magnetic order and ferroelectric properties has been investigated for MnWO$_4$ with long-wavelength magnetic structure. Spontaneous electric polarization is observed in an elliptical spiral spin phase. The magnetic-field dependence of electric polarization indicates that the noncollinear spin configuration plays a key role for the appearance of ferroelectric phase. An el…
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The relationship between magnetic order and ferroelectric properties has been investigated for MnWO$_4$ with long-wavelength magnetic structure. Spontaneous electric polarization is observed in an elliptical spiral spin phase. The magnetic-field dependence of electric polarization indicates that the noncollinear spin configuration plays a key role for the appearance of ferroelectric phase. An electric polarization flop from the b direction to the a direction has been observed when a magnetic field above 10T is applied along the b axis. This result demonstrates that an electric polarization flop can be induced by a magnetic field in a simple system without rare-earth f-moments.
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Submitted 1 September, 2006; v1 submitted 19 July, 2006;
originally announced July 2006.
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Hall effect of quasi-hole gas in organic single-crystal transistors
Authors:
J. Takeya,
K. Tsukagoshi,
Y. Aoyagi,
T. Takenobu,
Y. Iwasa
Abstract:
Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C42H28) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced charge upon the hole accumulation. The presence of the normal Hall effect means that the electromagnetic character of the surface charge is not of hopping car…
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Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C42H28) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced charge upon the hole accumulation. The presence of the normal Hall effect means that the electromagnetic character of the surface charge is not of hopping carriers but resembles that of a two-dimensional hole-gas system.
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Submitted 8 November, 2005;
originally announced November 2005.
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Regularity in the intratube interaction in double-wall carbon nanotubes
Authors:
J. Arvanitidis,
D. Christofilos,
K. Papagelis,
T. Takenobu,
Y. Iwasa,
H. Kataura,
S. Ves,
G. A. Kourouklis
Abstract:
High pressure Raman experiments were performed on bundled double wall carbon nanotubes (DWCNTs). We observe peculiar regularity in the strength of the inner-outer tube (intratube) interaction, which is attributed to the interplay between the tube size and the intratube spacing. Moreover, a pressure-induced red shift of the band gap energies of the probed inner tubes is deduced from the Raman spe…
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High pressure Raman experiments were performed on bundled double wall carbon nanotubes (DWCNTs). We observe peculiar regularity in the strength of the inner-outer tube (intratube) interaction, which is attributed to the interplay between the tube size and the intratube spacing. Moreover, a pressure-induced red shift of the band gap energies of the probed inner tubes is deduced from the Raman spectra. These experimental findings reveal that the interaction between primary and secondary shells, although generally assumed to be weak, determines the dynamics in the interior of the DWCNTs.
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Submitted 8 April, 2005;
originally announced April 2005.
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Pressure screening in the interior of primary shells in double-wall carbon nanotubes
Authors:
J. Arvanitidis,
D. Christofilos,
K. Papagelis,
K. S. Andrikopoulos,
T. Takenobu,
Y. Iwasa,
H. Kataura,
S. Ves,
G. A. Kourouklis
Abstract:
The pressure response of double-wall carbon nanotubes has been investigated by means of Raman spectroscopy up to 10 GPa. The intensity of the radial breathing modes of the outer tubes decreases rapidly but remain observable up to 9 GPa, exhibiting a behavior similar (but less pronounced) to that of single-wall carbon nanotubes, which undergo a shape distortion at higher pressures. In addition, t…
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The pressure response of double-wall carbon nanotubes has been investigated by means of Raman spectroscopy up to 10 GPa. The intensity of the radial breathing modes of the outer tubes decreases rapidly but remain observable up to 9 GPa, exhibiting a behavior similar (but less pronounced) to that of single-wall carbon nanotubes, which undergo a shape distortion at higher pressures. In addition, the tangential band of the external tubes broadens and decreases in amplitude. The corresponding Raman features of the internal tubes appear to be considerably less sensitive to pressure. All findings lead to the conclusion that the outer tubes act as a protection shield for the inner tubes whereas the latter increase the structural stability of the outer tubes upon pressure application.
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Submitted 11 September, 2004; v1 submitted 7 September, 2004;
originally announced September 2004.
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Effects of polarized organosilane self-assembled monolayers on organic single-crystal field-effect transistors
Authors:
J. Takeya,
T. Nishikawa,
T. Takenobu,
S. Kobayashi,
C. Goldmann,
C. Krellner,
T. Shimoda,
T. Mitani,
Y Iwasa,
B. Batlogg
Abstract:
The surface conductivity is measured by a four-probe technique for pentacene and rubrene single-crystals laminated on polarized and nearly unpolarized molecular monolayers with application of perpendicular electric fields. The polarization of the self-assembled monolayers (SAMs) shifts the threshold gate voltage, while maintaining a very low subthreshold swing of the single-crystal devices (0.11…
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The surface conductivity is measured by a four-probe technique for pentacene and rubrene single-crystals laminated on polarized and nearly unpolarized molecular monolayers with application of perpendicular electric fields. The polarization of the self-assembled monolayers (SAMs) shifts the threshold gate voltage, while maintaining a very low subthreshold swing of the single-crystal devices (0.11 V/decade). The results, excluding influences of parasitic contacts and grain boundaries, demonstrate SAM-induced nanoscale charge injection up to ~10^12 cm^-2 at the surface of the organic single crystals.
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Submitted 16 July, 2004; v1 submitted 15 July, 2004;
originally announced July 2004.
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$^{11}$B NMR study of pure and lightly carbon doped MgB$_2$ superconductors
Authors:
M. Karayanni,
G. Papavassiliou,
M. Pissas,
M. Fardis,
K. Papagelis,
K. Prassides,
T. Takenobu,
Y. Iwasa
Abstract:
We report a $^{11}$B NMR line shape and spin-lattice relaxation rate ($1/(T_1T)$) study of pure and lightly carbon doped MgB$_{2-x}$C$_{x}$ for $x=0$, 0.02, and 0.04, in the vortex state and in magnetic field of 23.5 kOe. We show that while pure MgB$_2$ exhibits the magnetic field distribution from superposition of the normal and the Abrikosov state, slight replacement of boron with carbon unvei…
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We report a $^{11}$B NMR line shape and spin-lattice relaxation rate ($1/(T_1T)$) study of pure and lightly carbon doped MgB$_{2-x}$C$_{x}$ for $x=0$, 0.02, and 0.04, in the vortex state and in magnetic field of 23.5 kOe. We show that while pure MgB$_2$ exhibits the magnetic field distribution from superposition of the normal and the Abrikosov state, slight replacement of boron with carbon unveils the magnetic field distribution of the pure Abrikosov state. This indicates a considerable increase of $H_{c2}^c$ with carbon doping with respect to pure MgB$_2$. The spin-lattice relaxation rate $1/(T_1T)$ demonstrates clearly the presence of a coherence peak right below $T_c$ in pure MgB$_2$, followed by a typical BCS decrease on cooling. However, at temperatures lower than $\approx 10$K strong deviation from the BCS behavior is observed, probably from residual contribution of the vortex dynamics. In the carbon doped systems both the coherence peak and the BCS temperature dependence of $1/(T_1T)$ weaken, an effect attributed to the gradual shrinking of the $σ$ hole cylinders of the Fermi surface with electron doping.
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Submitted 26 February, 2004;
originally announced February 2004.
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muSR study of carbon-doped MgB2 superconductors
Authors:
K. Papagelis,
J. Arvanitidis,
K. Prassides,
A. Schenck,
T. Takenobu,
Y. Iwasa
Abstract:
The evolution of the superconducting properties of the carbon-doped MgB2 superconductors, MgB(2-x)Cx (x= 0.02, 0.04, 0.06) have been investigated by the transverse-field muon spin rotation (TF-muSR) technique. The low-temperature depolarisation rate, sigma(0) at 0.6 T which is proportional to the second moment of the field distribution of the vortex lattice decreases monotonically with increasin…
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The evolution of the superconducting properties of the carbon-doped MgB2 superconductors, MgB(2-x)Cx (x= 0.02, 0.04, 0.06) have been investigated by the transverse-field muon spin rotation (TF-muSR) technique. The low-temperature depolarisation rate, sigma(0) at 0.6 T which is proportional to the second moment of the field distribution of the vortex lattice decreases monotonically with increasing electron doping and decreasing Tc. In addition, the temperature dependence of sigma(T) has been analysed in terms of a two-gap model. The size of the two superconducting gaps decreases linearly as the carbon content increases, while the doping effect is more pronounced for the smaller gap related to the 3D pi-sheets of the Fermi surface.
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Submitted 7 November, 2002;
originally announced November 2002.
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Evidence for Insulating Behavior in the Electric Conduction of (NH$_3$)K$_3$C$_{60}$ Systems
Authors:
H. Kitano,
R. Matsuo,
K. Miwa,
A. Maeda,
T. Takenobu,
Y. Iwasa,
T. Mitani
Abstract:
Microwave study using cavity perturbation technique revealed that the conductivity of antiferromagnet (NH$_3$)K$_{3-x}$Rb$_x$C$_{60}$ at 200K is already 3-4 orders of magnitude smaller than those of superconductors, K$_3$C$_{60}$ and (NH$_3$)$_x$NaRb$_2$C$_{60}$, and that the antiferromagnetic compounds are {\it insulators} below 250K without metal-insulator transitions. The striking difference…
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Microwave study using cavity perturbation technique revealed that the conductivity of antiferromagnet (NH$_3$)K$_{3-x}$Rb$_x$C$_{60}$ at 200K is already 3-4 orders of magnitude smaller than those of superconductors, K$_3$C$_{60}$ and (NH$_3$)$_x$NaRb$_2$C$_{60}$, and that the antiferromagnetic compounds are {\it insulators} below 250K without metal-insulator transitions. The striking difference in the magnitude of the conductivity between these materials strongly suggests that the Mott-Hubbard transition in the ammoniated alkali fullerides is driven by a reduction of lattice symmetry from face-centered-cubic to face-centered-orthorhombic, rather than by the magnetic ordering.
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Submitted 28 January, 2002;
originally announced January 2002.
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Evidence for Spin-Singlet Superconductivity in Layered MgB2
Authors:
H. Tou,
H. Ikejiri,
Y. Maniwa,
T. Ito,
T. Takenobu,
K. Prassides,
Y. Iwasa
Abstract:
This paper has been withdrawn by the authors, because of serious experimental problems.
This paper has been withdrawn by the authors, because of serious experimental problems.
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Submitted 21 May, 2001; v1 submitted 22 March, 2001;
originally announced March 2001.
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Intralayer Carbon Substitution in the MgB2 Superconductor
Authors:
T. Takenobu,
T. Ito,
Dam H. Chi,
K. Prassides,
Y. Iwasa
Abstract:
We report that the ternary MgB2-xCx compounds adopt an isostructural AlB2-type hexagonal structure in a relatively small range of nominal carbon concentration, x<0.1. The lattice parameter a decreases almost linearly with increasing carbon content x, while the c parameter remains unchanged, indicating that carbon is exclusively substituted in the boron honeycomb layer without affecting the inter…
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We report that the ternary MgB2-xCx compounds adopt an isostructural AlB2-type hexagonal structure in a relatively small range of nominal carbon concentration, x<0.1. The lattice parameter a decreases almost linearly with increasing carbon content x, while the c parameter remains unchanged, indicating that carbon is exclusively substituted in the boron honeycomb layer without affecting the interlayer interactions. The superconducting transition temperature Tc, determined by magnetometry experiments, also decreases quasilinearly as a function of the carbon concentration. The structural and electronic behavior of MgB2-xCx displays a remarkable similarity with the isoelectronic Mg1-xAlxB2 despite the different substitution sites.
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Submitted 11 March, 2001;
originally announced March 2001.
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Anomalous Raman shift in the ternary fullerides with t1g states
Authors:
X. H. Chen,
T. Takenobu,
T. Muro,
H. Fudo,
Y. Iwasa
Abstract:
Raman shift dependence of charge transfer is studied in the two fulleride families of AxBa3C60 (x=0,3; A=K,Rb) and KxSm2.75C60 (x=0,3.25). It is found that the Raman spectra are essentially identical to each other for all ternary fullerides, The results show a crossover point at the boundary of t1u and t1g bands for the Raman shift dependence of charge transfer. For the t1u fullerides, the Ag(2)…
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Raman shift dependence of charge transfer is studied in the two fulleride families of AxBa3C60 (x=0,3; A=K,Rb) and KxSm2.75C60 (x=0,3.25). It is found that the Raman spectra are essentially identical to each other for all ternary fullerides, The results show a crossover point at the boundary of t1u and t1g bands for the Raman shift dependence of charge transfer. For the t1u fullerides, the Ag(2) pinch mode follows the characteristic shift of ~6.3cm-1 per elementary charge widely observed in KxC60. The two Ag modes in t1g fullerides show a complicated behavior. An anomalous Raman shift is observed in the t1g fullerides. This anomalous Raman shift of the two Ag modes could not be explained only by charge transfer.
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Submitted 28 April, 1999;
originally announced April 1999.
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Analysis of Japanese Compound Nouns using Collocational Information
Authors:
Kobayasi Yosiyuki,
Takunaga Takenobu,
Tanaka Hozumi
Abstract:
Analyzing compound nouns is one of the crucial issues for natural language processing systems, in particular for those systems that aim at a wide coverage of domains. In this paper, we propose a method to analyze structures of Japanese compound nouns by using both word collocations statistics and a thesaurus. An experiment is conducted with 160,000 word collocations to analyze compound nouns of…
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Analyzing compound nouns is one of the crucial issues for natural language processing systems, in particular for those systems that aim at a wide coverage of domains. In this paper, we propose a method to analyze structures of Japanese compound nouns by using both word collocations statistics and a thesaurus. An experiment is conducted with 160,000 word collocations to analyze compound nouns of with an average length of 4.9 characters. The accuracy of this method is about 80%.
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Submitted 25 December, 1994;
originally announced December 1994.
