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The nylon balloon for xenon loaded liquid scintillator in KamLAND-Zen 800 neutrinoless double-beta decay search experiment
Authors:
KamLAND-Zen collaboration,
:,
Y. Gando,
A. Gando,
T. Hachiya,
S. Hayashida,
K. Hosokawa,
H. Ikeda,
T. Mitsui,
T. Nakada,
S. Obara,
H. Ozaki,
J. Shirai,
K. Ueshima,
H. Watanabe,
S. Abe,
K. Hata,
A. Hayashi,
Y. Honda,
S. Ieki,
K. Inoue,
K. Ishidoshiro,
S. Ishikawa,
Y. Kamei,
K. Kamizawa
, et al. (49 additional authors not shown)
Abstract:
The KamLAND-Zen 800 experiment is searching for the neutrinoless double-beta decay of $^{136}$Xe by using $^{136}$Xe-loaded liquid scintillator. The liquid scintillator is enclosed inside a balloon made of thin, transparent, low-radioactivity film that we call Inner Balloon (IB). The IB, apart from guaranteeing the liquid containment, also allows to minimize the background from cosmogenic muon-spa…
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The KamLAND-Zen 800 experiment is searching for the neutrinoless double-beta decay of $^{136}$Xe by using $^{136}$Xe-loaded liquid scintillator. The liquid scintillator is enclosed inside a balloon made of thin, transparent, low-radioactivity film that we call Inner Balloon (IB). The IB, apart from guaranteeing the liquid containment, also allows to minimize the background from cosmogenic muon-spallation products and $^{8}$B solar neutrinos. Indeed these events could contribute to the total counts in the region of interest around the Q-value of the double-beta decay of $^{136}$Xe. In this paper, we present an overview of the IB and describe the various steps of its commissioning minimizing the radioactive contaminations, from the material selection, to the fabrication of the balloon and its installation inside the KamLAND detector. Finally, we show the impact of the IB on the KamLAND background as measured by the KamLAND detector itself.
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Submitted 4 June, 2021; v1 submitted 21 April, 2021;
originally announced April 2021.
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Search for cosmic dark matter by means of ultra high purity NaI(Tl) scintillator
Authors:
K. Fushimi,
D. Chernyak,
H. Ejiri,
R. Hazama,
S. Hirata,
H. Ikeda,
K. Inoue,
K. Imagawa,
G. Kanzaki,
A. Kozlov,
R. Orito,
T. Shima,
Y. Takemoto,
Y. Teraoka,
S. Umehara,
S. Yoshida
Abstract:
The dark matter search project by means of ultra high purity NaI(Tl) scintillator is now underdevelopment. An array of large volume NaI(Tl) detectors whose volume is 12.7 cm$φ\times$12.7 cm is applied to search for dark matter signal. To remove radioactive impurities in NaI(Tl) crystal is one of the most important task to find small number of dark matter signals. We have developed high purity NaI(…
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The dark matter search project by means of ultra high purity NaI(Tl) scintillator is now underdevelopment. An array of large volume NaI(Tl) detectors whose volume is 12.7 cm$φ\times$12.7 cm is applied to search for dark matter signal. To remove radioactive impurities in NaI(Tl) crystal is one of the most important task to find small number of dark matter signals. We have developed high purity NaI(Tl) crystal which contains small amounts of radioactive impurities, $<4$ ppb of $^{nat}$K, 0.3 ppt of Th chain, 58 $μ$Bq/kg of $^{226}$Ra and 30 $μ$Bq/kg of $^{210}$Pb. Future prospects to search for dark matter by means of a large volume and high purity NaI(Tl) scintillator is discussed.
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Submitted 28 April, 2017;
originally announced May 2017.
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Search for electron antineutrinos associated with gravitational wave events GW150914 and GW151226 using KamLAND
Authors:
KamLAND Collaboration,
A. Gando,
Y. Gando,
T. Hachiya,
A. Hayashi,
S. Hayashida,
H. Ikeda,
K. Inoue,
K. Ishidoshiro,
Y. Karino,
M. Koga,
S. Matsuda,
T. Mitsui,
K. Nakamura,
S. Obara,
T. Oura,
H. Ozaki,
I. Shimizu,
Y. Shirahata,
J. Shirai,
A. Suzuki,
T. Takai,
K. Tamae,
Y. Teraoka,
K. Ueshima
, et al. (23 additional authors not shown)
Abstract:
We present a search for low energy antineutrino events coincident with the gravitational wave events GW150914 and GW151226, and the candidate event LVT151012 using KamLAND, a kiloton-scale antineutrino detector. We find no inverse beta-decay neutrino events within $\pm 500$ seconds of either gravitational wave signal. This non-detection is used to constrain the electron antineutrino fluence and th…
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We present a search for low energy antineutrino events coincident with the gravitational wave events GW150914 and GW151226, and the candidate event LVT151012 using KamLAND, a kiloton-scale antineutrino detector. We find no inverse beta-decay neutrino events within $\pm 500$ seconds of either gravitational wave signal. This non-detection is used to constrain the electron antineutrino fluence and the luminosity of the astrophysical sources.
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Submitted 3 October, 2016; v1 submitted 22 June, 2016;
originally announced June 2016.
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High purity NaI(Tl) scintillator to search for dark matter
Authors:
Ken-Ichi Fushimi,
Hiroyasu Ejiri,
Ryuta Hazama,
Haruo Ikeda,
Kunio Inoue,
Kyoshiro Imagawa,
Gakuji Kanzaki,
Alexandre Kozlov,
Reiko Orito,
Tatsushi Shima,
Yasuhiro Takemoto,
Yuri Teraoka,
Saori Umehara,
Sei Yoshida
Abstract:
A high purity and large volume NaI(Tl) scintillator was developed to search for cosmic dark matter. The required densities of radioactive impurities (RIs) such as U-chain, Th-chain are less than a few ppt to establish high sensitivity to dark matter. The impurity of RIs were effectively reduced by selecting raw materials of crucible and by performing chemical reduction of lead ion in NaI raw powde…
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A high purity and large volume NaI(Tl) scintillator was developed to search for cosmic dark matter. The required densities of radioactive impurities (RIs) such as U-chain, Th-chain are less than a few ppt to establish high sensitivity to dark matter. The impurity of RIs were effectively reduced by selecting raw materials of crucible and by performing chemical reduction of lead ion in NaI raw powder. The impurity of $^{226}$Ra was reduced less than 100 $μ$Bq/kg in NaI(Tl) crystal. It should be remarked that the impurity of $^{210}$Pb, which is difficult to reduce, is effectively reduced by chemical processing of NaI raw powder down to less than 30 $μ$Bq/kg. The expected sensitivity to cosmic dark matter by using 250 kg of the high purity and large volume NaI(Tl) scintillator (PICO-LON; Pure Inorganic Crystal Observatory for LOw-background Neutr(al)ino) is 7$\times$10$^{-45}$ cm$^{2}$ for 50 GeV$/c^{2}$ WIMPs.
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Submitted 16 May, 2016;
originally announced May 2016.
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Valence band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics
Authors:
Hisato Yamaguchi,
Shuichi Ogawa,
Daiki Watanabe,
Hideaki Hozumi,
Yongqian Gao,
Goki Eda,
Cecilia Mattevi,
Takeshi Fujita,
Akitaka Yoshigoe,
Shinji Ishizuka,
Lyudmyla Adamska,
Takatoshi Yamada,
Andrew M. Dattelbaum,
Gautam Gupta,
Stephen K. Doorn,
Kirill A. Velizhanin,
Yuden Teraoka,
Mingwei Chen,
Han Htoon,
Manish Chhowalla,
Aditya D. Mohite,
Yuji Takakuwa
Abstract:
We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 oC.…
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We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 oC. The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of band gap closure was correlated with electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ~500 oC leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart.
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Submitted 3 May, 2016;
originally announced May 2016.
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Dark matter search project PICO-LON
Authors:
K. Fushimi,
H. Ejiri,
R. Hazama,
H. Ikeda,
K. Imagawa,
K. Inoue,
G. Kanzaki,
A. Kozlov,
R. Orito,
T. Shima,
Y. Takemoto,
Y. Teraoka,
S. Umehara,
K. Yasuda,
S. Yoshida
Abstract:
The PICO-LON project aims at search for cold dark matter by means of highly radio-pure and large volume NaI(Tl) scintillator. The NaI powder was purifed by chemical processing to remove lead isotopes and selecting a high purity graphite crucible. The concentrations of radioactive impurities of $^{226}$Ra and $^{228}$Th were effectively reduced to 58$\pm$4 $μ$Bq/kg and 1.5$\pm$1.9 $μ$Bq/kg, respect…
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The PICO-LON project aims at search for cold dark matter by means of highly radio-pure and large volume NaI(Tl) scintillator. The NaI powder was purifed by chemical processing to remove lead isotopes and selecting a high purity graphite crucible. The concentrations of radioactive impurities of $^{226}$Ra and $^{228}$Th were effectively reduced to 58$\pm$4 $μ$Bq/kg and 1.5$\pm$1.9 $μ$Bq/kg, respectively. It should be remarked that the concentration of $^{210}$Pb, which is crucial for the sensitivity to dark matter, was reduced to 24$\pm$2 $μ$Bq/kg. The total background rate at 10 keVee was as low as 8 keV$^{-1}$kg$^{-1}$day$^{-1}$, which was sufficiently low to search for dark matter. Further purification of NaI(Tl) ingot and future prospect of PICO-LON project is discussed.
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Submitted 14 December, 2015;
originally announced December 2015.
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Epitaxial Graphene on Silicon toward Graphene-Silicon Fusion Electronics
Authors:
Hirokazu Fukidome,
Ryota Takahashi,
Yu Miyamoto,
Hiroyuki Handa,
Hyun-Chul Kang,
Hiromi Karasawa,
Tetsuya Suemitsu,
Taiichi Otsuji,
Akitaka Yoshigoe,
Yuden Teraoka,
Maki Suemitsu
Abstract:
Graphene is a promising contender to succeed the throne of silicon in electronics. To this goal, large-scale epitaxial growth of graphene on substrates should be developed. Among various methods along this line, epitaxial growth of graphene on SiC substrates by thermal decomposition of surface layers has proved itself quite satisfactory both in quality and in process reliability. Even modulation…
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Graphene is a promising contender to succeed the throne of silicon in electronics. To this goal, large-scale epitaxial growth of graphene on substrates should be developed. Among various methods along this line, epitaxial growth of graphene on SiC substrates by thermal decomposition of surface layers has proved itself quite satisfactory both in quality and in process reliability. Even modulation of structural and hence electronic properties of graphene is possible by tuning the graphene/SiC interface structure. The challenges for this graphene-on-SiC technology, however, are the abdication of the well-established Si technologies and the high production cost of the SiC bulk crystals. Here, we demonstrate that formation of epitaxial graphene on silicon substrate is possible, by graphitizing epitaxial SiC thin films formed on silicon substrates. This graphene-on-silicon (GOS) method enables us to form a large-area film of well-ordered sp2 carbon networks on Si substrates and to fabricate electronic devices based on the structure.
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Submitted 27 January, 2010;
originally announced January 2010.
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An oxide thermal rectifier
Authors:
W. Kobayashi,
Y. Teraoka,
I. Terasaki
Abstract:
We have experimentally demonstrated thermal rectification as bulk effect. According to a theoretical design of a thermal rectifier, we have prepared an oxide thermal rectifier made of two cobalt oxides with different thermal conductivities, and have made an experimental system to detect the thermal rectification. The rectifying coefficient of the device is found to be 1.43, which is in good agre…
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We have experimentally demonstrated thermal rectification as bulk effect. According to a theoretical design of a thermal rectifier, we have prepared an oxide thermal rectifier made of two cobalt oxides with different thermal conductivities, and have made an experimental system to detect the thermal rectification. The rectifying coefficient of the device is found to be 1.43, which is in good agreement with the numerical calculation.
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Submitted 6 October, 2009;
originally announced October 2009.
