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Coexistence of Superconductivity and Charge Density Wave in Tantalum Disulfide: Experiment and Theory
Authors:
Y. Kvashnin,
D. VanGennep,
M. Mito,
S. A. Medvedev,
R. Thiyagarajan,
O. Karis,
A. N. Vasiliev,
O. Eriksson,
M. Abdel-Hafiez
Abstract:
The coexistence of charge density wave (CDW) and superconductivity in tantalum disulfide (2H-TaS$_2$) at ambient pressure, is boosted by applying hydrostatic pressures up to 30GPa, thereby inducing a typical dome-shaped superconducting phase. The ambient pressure CDW ground state which begins at TCDW = 76 K, with critically small Fermi surfaces, was found to be fully suppressed at Pc = 8.7GPa. Aro…
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The coexistence of charge density wave (CDW) and superconductivity in tantalum disulfide (2H-TaS$_2$) at ambient pressure, is boosted by applying hydrostatic pressures up to 30GPa, thereby inducing a typical dome-shaped superconducting phase. The ambient pressure CDW ground state which begins at TCDW = 76 K, with critically small Fermi surfaces, was found to be fully suppressed at Pc = 8.7GPa. Around Pc, we observe a superconducting dome with a maximum superconducting transition temperature Tc = 9.1 K. First-principles calculations of the electronic structure predict that, under ambient conditions, the undistorted structure is characterized by a phonon instability at finite momentum close to the experimental CDW wave vector. Upon compression, this instability is found to disappear, indicating the suppression of CDW order. The calculations reveal an electronic topological transition (ETT), which occurs before the suppression of the phonon instability, suggesting that the ETT alone is not directly causing the structural change in the system. The temperature dependence of the first vortex penetration field has been experimentally obtained by two independent methods and the corresponding lower critical field H$_{c1}$ was deduced. While a d wave and single-gap BCS prediction cannot describe our H$_{c1}$ experiments, the temperature dependence of the H$_{c1}$ can be well described by a single-gap anisotropic s-wave order parameter.
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Submitted 29 July, 2020;
originally announced July 2020.
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Wohlleben Effect and Emergent Pi junctions in superconducting Boron doped Diamond thin films
Authors:
L. Govindaraj,
S. Arumugam,
R. Thiyagarajan,
Dinesh Kumar,
M. Kannan,
Dhrubha Das,
T. S. Suraj,
V. Sankaranarayanan,
K. Sethupathi,
G. Baskaran,
Raman Sankar,
M. S. Ramachandra Rao
Abstract:
Diamond is an excellent band insulator. However, boron (B) doping is known to induce superconductivity. We present two interesting effects in superconducting B doped diamond (BDD) thin films: i) Wohlleben effect (paramagnetic Meissner effect, PME) and ii) a low field spin glass like susceptibility anomaly. We have performed electrical and magnetic measurements (under pressure in one sample) at dop…
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Diamond is an excellent band insulator. However, boron (B) doping is known to induce superconductivity. We present two interesting effects in superconducting B doped diamond (BDD) thin films: i) Wohlleben effect (paramagnetic Meissner effect, PME) and ii) a low field spin glass like susceptibility anomaly. We have performed electrical and magnetic measurements (under pressure in one sample) at dopings (1.4 , 2.6 and 3.6) X 1021 cm-3, in a temperature range 2 - 10 K. PME, a low field anomaly in inhomogeneous superconductors could arise from flux trapping, flux compression, or for non-trivial reason such as emergent Josephson Pi junctions. Joint occurrence of PME and spin glass type anomalies points to possible emergence of Pi junctions. BDD is a disordered s-wave superconductor; and Pi junctions could be produced by spin flip scattering of spin half moments when present at weak superconducting regions (Bulaevski et al. 1978). A frustrated network of 0 and Pi junctions will result (Kusmartsev et al. 1992) in a distribution of spontaneous equilibrium supercurrents, a phase glass state. Anderson localized spin half spinons embedded in a metallic fluid (two fluid model of Bhatt et al.) could create Pi junction by spin flip scattering. Our findings are consistent with presence of Pi junctions, invoked to explain their (Bhattacharyya et al.) observation of certain resistance anomaly in BDD.
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Submitted 23 June, 2020;
originally announced June 2020.
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High-pressure behavior of superconducting boron-doped diamond
Authors:
Mahmoud Abdel-Hafiez,
Dinesh Kumar,
R. Thiyagarajan,
Q. Zhang,
R. T. Howie,
K. Sethupathi,
O. Volkova,
A. Vasiliev,
W. Yang,
H. K. Mao,
M. S. Ramachandra Rao
Abstract:
This work investigates the high-pressure structure of freestanding superconducting ($T_{c}$ = 4.3\,K) boron doped diamond (BDD) and how it affects the electronic and vibrational properties using Raman spectroscopy and x-ray diffraction in the 0-30\,GPa range. High-pressure Raman scattering experiments revealed an abrupt change in the linear pressure coefficients and the grain boundary components u…
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This work investigates the high-pressure structure of freestanding superconducting ($T_{c}$ = 4.3\,K) boron doped diamond (BDD) and how it affects the electronic and vibrational properties using Raman spectroscopy and x-ray diffraction in the 0-30\,GPa range. High-pressure Raman scattering experiments revealed an abrupt change in the linear pressure coefficients and the grain boundary components undergo an irreversible phase change at 14\,GPa. We show that the blue shift in the pressure-dependent vibrational modes correlates with the negative pressure coefficient of $T_{c}$ in BDD. The analysis of x-ray diffraction data determines the equation of state of the BDD film, revealing a high bulk modulus of $B_{0}$=510$\pm$28\,GPa. The comparative analysis of high-pressure data clarified that the sp$^{2}$ carbons in the grain boundaries transform into hexagonal diamond.
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Submitted 22 September, 2017;
originally announced September 2017.
