Showing 1–9 of 9 results for author: Tran, N T M

Constructing 100 MΩおめが and 1 GΩおめが Resistance Standards via Star-Mesh Transformations

Authors: Dean G. Jarrett, Albert F. Rigosi, Dominick S. Scaletta, Ngoc Thanh Mai Tran, Heather M. Hill, Alireza R. Panna, Cheng Hsueh Yang, Yanfei Yang, Randolph E. Elmquist, David B. Newell

Abstract: A recent mathematical framework for optimizing resistor networks to achieve values in the MΩおめが through GΩおめが levels was employed for two specific cases. Objectives here include proof of concept and identification of possible apparatus limitations for future experiments involving graphene-based quantum Hall array resistance standards. Using fractal-like, or recursive, features of the framework allows on… ▽ More A recent mathematical framework for optimizing resistor networks to achieve values in the MΩおめが through GΩおめが levels was employed for two specific cases. Objectives here include proof of concept and identification of possible apparatus limitations for future experiments involving graphene-based quantum Hall array resistance standards. Using fractal-like, or recursive, features of the framework allows one to calculate and implement network designs with substantially lower-valued resistors. The cases of 100 MΩおめが and 1 GΩおめが demonstrate that, theoretically, one would not need more than 100 quantum Hall elements to achieve these high resistances. △ Less

Submitted 2 February, 2024; originally announced February 2024.

Fractal-like star-mesh transformations using graphene quantum Hall arrays

Authors: Dominick S. Scaletta, Swapnil M. Mhatre, Ngoc Thanh Mai Tran, Cheng-Hsueh Yang, Heather M. Hill, Yanfei Yang, Linli Meng, Alireza R. Panna, Shamith U. Payagala, Randolph E. Elmquist, Dean G. Jarrett, David B. Newell, Albert F. Rigosi

Abstract: A mathematical approach is adopted for optimizing the number of total device elements required for obtaining high effective quantized resistances in graphene-based quantum Hall array devices. This work explores an analytical extension to the use of star-mesh transformations such that fractal-like, or recursive, device designs can yield high enough resistances (like 1 EΩおめが, arguably the highest resis… ▽ More A mathematical approach is adopted for optimizing the number of total device elements required for obtaining high effective quantized resistances in graphene-based quantum Hall array devices. This work explores an analytical extension to the use of star-mesh transformations such that fractal-like, or recursive, device designs can yield high enough resistances (like 1 EΩおめが, arguably the highest resistance with meaningful applicability) while still being feasible to build with modern fabrication techniques. Epitaxial graphene elements are tested, whose quantized Hall resistance at the nu=2 plateau (R_H = 12906.4 Ωおーむ) becomes the building block for larger effective, quantized resistances. It is demonstrated that, mathematically, one would not need more than 200 elements to achieve the highest pertinent resistances △ Less

Submitted 27 September, 2023; originally announced September 2023.

Realization of the quantum ampere using the quantum anomalous Hall and Josephson effects

Authors: Linsey K. Rodenbach, Ngoc Thanh Mai Tran, Jason M. Underwood, Alireza R. Panna, Molly P. Andersen, Zachary S. Barcikowski, Shamith U. Payagala, Peng Zhang, Lixuan Tai, Kang L. Wang, Randolph E. Elmquist, Dean G. Jarrett, David B. Newell, Albert F. Rigosi, David Goldhaber-Gordon

Abstract: By directly coupling a quantum anomalous Hall resistor to a programmable Josephson voltage standard, we have implemented a quantum current sensor (QCS) that operates within a single cryostat in zero magnetic field. Using this QCS we determine values of current within the range 9.33 nA - 252 nA, providing a realization of the ampere based on fundamental constants and quantum phenomena. The relative… ▽ More By directly coupling a quantum anomalous Hall resistor to a programmable Josephson voltage standard, we have implemented a quantum current sensor (QCS) that operates within a single cryostat in zero magnetic field. Using this QCS we determine values of current within the range 9.33 nA - 252 nA, providing a realization of the ampere based on fundamental constants and quantum phenomena. The relative Type A uncertainty is lowest, 2.30 $\times$10$^{-6}$ A/A, at the highest current studied, 252 nA. The total root-sum-square combined relative uncertainty ranges from 3.91 $\times$10$^{-6}$ A/A at 252 nA to 41.2 $\times$10$^{-6}$ A/A at 9.33 nA. No DC current standard is available in the nanoampere range with relative uncertainty comparable to this, so we assess our QCS accuracy by comparison to a traditional Ohm's law measurement of the same current source. We find closest agreement (1.46 $\pm$ 4.28)$\times$10$^{-6}$ A/A for currents near 83.9 nA, for which the highest number of measurements were made. △ Less

Submitted 31 July, 2023; originally announced August 2023.

Comments: 12 pages, 5 figures, 15 pages of supplemental information

Variable Electrical Responses in Epitaxial Graphene Nanoribbons

Authors: C. -C. Yeh, S. M. Mhatre, N. T. M. Tran, H. M. Hill, H. Jin, P. -C. Liao, D. K. Patel, R. E. Elmquist, C. -T. Liang, A. F. Rigosi

Abstract: We have demonstrated the fabrication of both armchair and zigzag epitaxial graphene nanoribbon (GNR) devices on 4H-SiC using a polymer-assisted sublimation growth method. The phenomenon of terrace step formation has traditionally introduced the risk of GNR deformation along sidewalls, but a polymer-assisted sublimation method helps mitigate this risk. Each type of 50 nm wide GNR is examined electr… ▽ More We have demonstrated the fabrication of both armchair and zigzag epitaxial graphene nanoribbon (GNR) devices on 4H-SiC using a polymer-assisted sublimation growth method. The phenomenon of terrace step formation has traditionally introduced the risk of GNR deformation along sidewalls, but a polymer-assisted sublimation method helps mitigate this risk. Each type of 50 nm wide GNR is examined electrically and optically (armchair and zigzag), with the latter method being a check on the quality of the GNR devices and the former using alternating current to investigate resistance attenuation from frequencies above 100 Hzへるつ. Rates of attenuation are determined for each type of GNR device, revealing subtle suggested differences between armchair and zigzag GNRs. △ Less

Submitted 25 April, 2023; originally announced April 2023.

Star-Mesh Quantized Hall Array Resistance Devices

Authors: Dean G. Jarrett, Ching-Chen Yeh, Shamith U. Payagala, Alireza R. Panna, Yanfei Yang, Linli Meng, Swapnil M. Mhatre, Ngoc Thanh Mai Tran, Heather M. Hill, Dipanjan Saha, Randolph E. Elmquist, David B. Newell, Albert F. Rigosi

Abstract: Advances in the development of graphene-based technology have enabled improvements in DC resistance metrology. Devices made from epitaxially grown graphene have replaced the GaAs-based counterparts, leading to an easier and more accessible realization of the ohm. By optimizing the scale of the growth, it has become possible to fabricate quantized Hall array resistance standards (QHARS) with nomina… ▽ More Advances in the development of graphene-based technology have enabled improvements in DC resistance metrology. Devices made from epitaxially grown graphene have replaced the GaAs-based counterparts, leading to an easier and more accessible realization of the ohm. By optimizing the scale of the growth, it has become possible to fabricate quantized Hall array resistance standards (QHARS) with nominal values between 1 kΩおめが and 1.29 MΩおめが. One of these QHARS device designs accommodates a value of about 1.01 MΩおめが, which made it an ideal candidate to pursue a proof-of-concept that graphene-based QHARS devices are suitable for forming wye-delta resistance networks. In this work, the 1.01 MΩおめが array output nearly 20.6 MΩおめが due to the wye-delta transformation, which itself is a special case of star-mesh transformations. These mathematical equivalence principles allow one to extend the QHR to the 100 MΩおめが and 10 GΩおめが resistance levels with fewer array elements than would be necessary for a single array with many more elements in series. The 1.01 MΩおめが device shows promise that the wye-delta transformation can shorten the calibration chain, and, more importantly, provide a chain with a more direct line to the quantum SI. △ Less

Submitted 21 April, 2023; originally announced April 2023.

Optical Signatures of Strain Differences in Epitaxial Graphene Nanoribbons

Authors: Heather M. Hill, Ching-Chen Yeh, Swapnil M. Mhatre, Ngoc Thanh Mai Tran, Hanbyul Jin, Adam J. Biacchi, Chi-Te Liang, Angela R. Hight Walker, Albert F. Rigosi

Abstract: We demonstrate the preparation of both armchair and zigzag epitaxial graphene nanoribbons (GNRs) on 4H-SiC using a polymer-assisted, sublimation growth method. Historically, the preparation of GNRs depended on the quality, or smoothness, of the surface changes during growth. The physical phenomenon of terrace step formation introduces the risk of GNR deformation along sidewalls, but the risk is he… ▽ More We demonstrate the preparation of both armchair and zigzag epitaxial graphene nanoribbons (GNRs) on 4H-SiC using a polymer-assisted, sublimation growth method. Historically, the preparation of GNRs depended on the quality, or smoothness, of the surface changes during growth. The physical phenomenon of terrace step formation introduces the risk of GNR deformation along sidewalls, but the risk is heavily mitigated by this polymer-assisted sublimation method. Two widths (100 nm and 50 nm) are examined electrically and optically for both armchair and zigzag GNRs. Our electrical results support the expected behaviors of the GNRs, while the optical signatures of variable strain reveal the subtle differences among all the GNR species measured. △ Less

Submitted 28 February, 2023; originally announced February 2023.

Fabrication of uniformly doped graphene quantum Hall arrays with multiple quantized resistance outputs

Authors: Swapnil M. Mhatre, Ngoc Thanh Mai Tran, Heather M. Hill, Ching-Chen Yeh, Dipanjan Saha, David B. Newell, Angela R. Hight Walker, Chi-Te Liang, Randolph E. Elmquist, Albert F. Rigosi

Abstract: In this work, limiting factors for developing metrologically useful arrays from epitaxial graphene on SiC are lifted with a combination of centimeter-scale, high-quality material growth and the implementation of superconducting contacts. Standard devices for metrology have been restricted to having a single quantized value output based on the $νにゅー$ = 2 Landau level. With the demonstrations herein of… ▽ More In this work, limiting factors for developing metrologically useful arrays from epitaxial graphene on SiC are lifted with a combination of centimeter-scale, high-quality material growth and the implementation of superconducting contacts. Standard devices for metrology have been restricted to having a single quantized value output based on the $νにゅー$ = 2 Landau level. With the demonstrations herein of devices having multiple outputs of quantized values available simultaneously, these versatile devices can be used to disseminate the ohm globally. Such devices are designed to give access to quantized resistance values over the range of three orders of magnitude, starting as low as the standard value of approximately 12.9 k$Ωおめが$ and reaching as high as 1.29 M$Ωおめが$. Several experimental methods are used to assess the quality and versatility of the devices, including standard lock-in techniques and Raman spectroscopy. △ Less

Submitted 10 June, 2022; originally announced June 2022.

Spectroscopic assessment of short-term nitric acid doping of epitaxial graphene

Authors: Ngoc Thanh Mai Tran, Swapnil M. Mhatre, Cristiane N. Santos, Adam J. Biacchi, Mathew L. Kelley, Heather M. Hill, Dipanjan Saha, Chi-Te Liang, Randolph E. Elmquist, David B. Newell, Benoit Hackens, Christina A. Hacker, Albert F. Rigosi

Abstract: This work reports information on the transience of hole doping in epitaxial graphene devices when nitric acid is used as an adsorbent. Under vacuum conditions, desorption processes are monitored by electrical and spectroscopic means to extract the relevant timescales from the corresponding data. It is of vital importance to understand the reversible nature of hole doping because such device proces… ▽ More This work reports information on the transience of hole doping in epitaxial graphene devices when nitric acid is used as an adsorbent. Under vacuum conditions, desorption processes are monitored by electrical and spectroscopic means to extract the relevant timescales from the corresponding data. It is of vital importance to understand the reversible nature of hole doping because such device processing can be a suitable alternative to large-scale, metallic gating. Most measurements are performed post-exposure at room temperature, and, for some electrical transport measurements, at 1.5 K. Vacuum conditions are applied to many measurements to replicate the laboratory conditions under which devices using this doping method would be measured. The relevant timescales from transport measurements are compared with results from X-ray photoelecton spectroscopy and Fourier transform infrared spectroscopy measurements, with the latter performed at ambient conditions and accompanied by calculations of the spectra in the Reststrahlen band. △ Less

Submitted 15 April, 2022; originally announced April 2022.

Timescales for Nitric Acid Desorption in Epitaxial Graphene Devices

Authors: Swapnil M. Mhatre, Ngoc Thanh Mai Tran, Heather M. Hill, Dipanjan Saha, Angela R. Hight Walker, Chi-Te Liang, Randolph E. Elmquist, David B. Newell, Albert F. Rigosi

Abstract: This work reports the dynamics of transient hole doping in epitaxial graphene devices by using nitric acid as an adsorbent. The timescales associated with corresponding desorption processes are extracted from the data. The understanding of reversible hole doping without gating is of crucial importance to those fabricating devices with a particular functionality. Measurements of the electrical and… ▽ More This work reports the dynamics of transient hole doping in epitaxial graphene devices by using nitric acid as an adsorbent. The timescales associated with corresponding desorption processes are extracted from the data. The understanding of reversible hole doping without gating is of crucial importance to those fabricating devices with a particular functionality. Measurements of the electrical and optical properties of several devices post-exposure were performed with transport temperatures between 300 K and 1.5 K. Ambient conditions are applied to non-transport measurements to replicate the most likely laboratory conditions for handling devices using this doping method. The relevant timescales from transport measurements are compared with results from Raman spectroscopy measurements. △ Less

Submitted 15 April, 2022; originally announced April 2022.