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Unified laser stabilization and isolation on a silicon chip
Authors:
Alexander D. White,
Geun Ho Ahn,
Richard Luhtaru,
Joel Guo,
Theodore J. Morin,
Abhi Saxena,
Lin Chang,
Arka Majumdar,
Kasper Van Gasse,
John E. Bowers,
Jelena Vučković
Abstract:
Rapid progress in photonics has led to an explosion of integrated devices that promise to deliver the same performance as table-top technology at the nanoscale; heralding the next generation of optical communications, sensing and metrology, and quantum technologies. However, the challenge of co-integrating the multiple components of high-performance laser systems has left application of these nano…
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Rapid progress in photonics has led to an explosion of integrated devices that promise to deliver the same performance as table-top technology at the nanoscale; heralding the next generation of optical communications, sensing and metrology, and quantum technologies. However, the challenge of co-integrating the multiple components of high-performance laser systems has left application of these nanoscale devices thwarted by bulky laser sources that are orders of magnitude larger than the devices themselves. Here we show that the two main ingredients for high-performance lasers -- noise reduction and isolation -- currently requiring serial combination of incompatible technologies, can be sourced simultaneously from a single, passive, CMOS-compatible nanophotonic device. To do this, we take advantage of both the long photon lifetime and the nonreciprocal Kerr nonlinearity of a high quality factor silicon nitride ring resonator to self-injection lock a semiconductor laser chip while also providing isolation. Additionally, we identify a previously unappreciated power regime limitation of current on-chip laser architectures which our system overcomes. Using our device, which we term a unified laser stabilizer, we demonstrate an on-chip integrated laser system with built-in isolation and noise reduction that operates with turnkey reliability. This approach departs from efforts to directly miniaturize and integrate traditional laser system components and serves to bridge the gap to fully integrated optical technologies.
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Submitted 24 May, 2024; v1 submitted 3 April, 2024;
originally announced April 2024.
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Titanium:Sapphire-on-insulator for broadband tunable lasers and high-power amplifiers on chip
Authors:
Joshua Yang,
Kasper Van Gasse,
Daniil M. Lukin,
Melissa A. Guidry,
Geun Ho Ahn,
Alexander D. White,
Jelena Vučković
Abstract:
Titanium:Sapphire (Ti:Sa) lasers have been essential for advancing fundamental research and technological applications. Ti:Sa lasers are unmatched in bandwidth and tuning range, yet their use is severely restricted due to their large size, cost, and need for high optical pump powers. Here, we demonstrate a monocrystalline Ti:Sa-on-insulator (Ti:SaOI) photonics platform which enables dramatic minia…
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Titanium:Sapphire (Ti:Sa) lasers have been essential for advancing fundamental research and technological applications. Ti:Sa lasers are unmatched in bandwidth and tuning range, yet their use is severely restricted due to their large size, cost, and need for high optical pump powers. Here, we demonstrate a monocrystalline Ti:Sa-on-insulator (Ti:SaOI) photonics platform which enables dramatic miniaturization, cost-reduction, and scalability of Ti:Sa technology. First, through fabrication of low-loss whispering gallery mode resonators, we realize a Ti:Sa laser operating with an ultra-low lasing threshold of 290 $μ$W. Then, through orders-of-magnitude improvement in mode confinement in Ti:SaOI waveguides, we realize the first integrated solid-state (i.e., non-semiconductor) optical amplifier operating below 1 $μ$m, with an ultra-wide bandwidth of 700 - 950 nm and peak gain of 64 dB/cm. We demonstrate unprecedented 17 dB distortion-free amplification of picosecond pulses to up to 2.3 nJ pulse energy, corresponding to a peak power of 1.0 kW. Finally, we demonstrate the first tunable integrated Ti:Sa laser, featuring narrow linewidths and a 24.7 THz tuning range, which, for the first time, can be pumped with low-cost, miniature, off-the-shelf green laser diodes. This opens doors to new modalities of Ti:Sa lasers (now occupying a footprint less than 0.15 mm$^2$), such as massively-scalable Ti:Sa laser array systems for a variety of applications. As a proof-of-concept demonstration, we employ a Ti:SaOI laser array as the sole optical control for a cavity quantum electrodynamics experiment with artificial atoms in silicon carbide. This work is a key step towards the democratization of Ti:Sa technology through a three orders-of-magnitude reduction in cost and footprint, as well as the introduction of solid-state broadband amplification of sub-micron wavelength light.
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Submitted 30 November, 2023;
originally announced December 2023.
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Microwave Spin Control of a Tin-Vacancy Qubit in Diamond
Authors:
Eric I. Rosenthal,
Christopher P. Anderson,
Hannah C. Kleidermacher,
Abigail J. Stein,
Hope Lee,
Jakob Grzesik,
Giovanni Scuri,
Alison E. Rugar,
Daniel Riedel,
Shahriar Aghaeimeibodi,
Geun Ho Ahn,
Kasper Van Gasse,
Jelena Vuckovic
Abstract:
The negatively charged tin-vacancy (SnV-) center in diamond is a promising solid-state qubit for applications in quantum networking due to its high quantum efficiency, strong zero phonon emission, and reduced sensitivity to electrical noise. The SnV- has a large spin-orbit coupling, which allows for long spin lifetimes at elevated temperatures, but unfortunately suppresses the magnetic dipole tran…
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The negatively charged tin-vacancy (SnV-) center in diamond is a promising solid-state qubit for applications in quantum networking due to its high quantum efficiency, strong zero phonon emission, and reduced sensitivity to electrical noise. The SnV- has a large spin-orbit coupling, which allows for long spin lifetimes at elevated temperatures, but unfortunately suppresses the magnetic dipole transitions desired for quantum control. Here, by use of a naturally strained center, we overcome this limitation and achieve high-fidelity microwave spin control. We demonstrate a pi-pulse fidelity of up to 99.51+/0.03%$ and a Hahn-echo coherence time of T2echo = 170.0+/-2.8 microseconds, both the highest yet reported for SnV- platform. This performance comes without compromise to optical stability, and is demonstrated at 1.7 Kelvin where ample cooling power is available to mitigate drive induced heating. These results pave the way for SnV- spins to be used as a building block for future quantum technologies.
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Submitted 30 August, 2023; v1 submitted 22 June, 2023;
originally announced June 2023.
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Integrated Passive Nonlinear Optical Isolators
Authors:
Alexander D. White,
Geun Ho Ahn,
Kasper Van Gasse,
Ki Youl Yang,
Lin Chang,
John E. Bowers,
Jelena Vučković
Abstract:
Fiber and bulk-optical isolators are widely used to stabilize laser cavities by preventing unwanted feedback. However, their integrated counterparts have been slow to be adopted. While several strategies for on-chip optical isolation have been realized, these rely on either integration of magneto-optic materials or high frequency modulation with acousto-optic or electro-optic modulators. Here, we…
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Fiber and bulk-optical isolators are widely used to stabilize laser cavities by preventing unwanted feedback. However, their integrated counterparts have been slow to be adopted. While several strategies for on-chip optical isolation have been realized, these rely on either integration of magneto-optic materials or high frequency modulation with acousto-optic or electro-optic modulators. Here, we demonstrate an integrated approach for passively isolating a continuous wave laser using the intrinsically non-reciprocal Kerr nonlinearity in ring resonators. Using silicon nitride as a model platform, we achieve single ring isolation of 17-23dB with 1.8-5.5dB insertion loss, and a cascaded ring isolation of 35dB with 5dB insertion loss. Employing these devices, we demonstrate hybrid integration and isolation with a semi-conductor laser chip.
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Submitted 13 June, 2022; v1 submitted 2 June, 2022;
originally announced June 2022.
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Dual-Comb Hyperspectral Digital Holography
Authors:
Edoardo Vicentini,
Zhenhai Wang,
Kasper Van Gasse,
Theodor W. Hänsch,
Nathalie Picqué
Abstract:
Holography has always held special appeal, for it is able to record and display spatial information in three dimensions. Here, we show how to augment the capabilities of digital holography by using a large number of narrow laser lines at precisely-defined optical frequencies simultaneously. Using an interferometer based on two frequency combs of slightly different repetition frequencies and a lens…
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Holography has always held special appeal, for it is able to record and display spatial information in three dimensions. Here, we show how to augment the capabilities of digital holography by using a large number of narrow laser lines at precisely-defined optical frequencies simultaneously. Using an interferometer based on two frequency combs of slightly different repetition frequencies and a lens-less camera sensor, we record time-varying spatial interference patterns that generate spectral hypercubes of complex holograms, revealing, for each comb line frequency, amplitudes and phases of scattered wave-fields. Unlike with previous multi-color holography and low-coherence holography (including with a frequency comb), the unique synergy of broad spectral bandwidth and high temporal coherence in dual-comb holography opens up novel optical diagnostics, such as precise dimensional metrology over large distances without interferometric phase ambiguity, or hyperspectral 3-dimensional imaging with high spectral resolving power, as we illustrate by molecule-selective imaging of an absorbing gas.
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Submitted 2 May, 2021;
originally announced May 2021.
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Inverse-designed multi-dimensional silicon photonic transmitters
Authors:
Ki Youl Yang,
Alexander D. White,
Farshid Ashtiani,
Chinmay Shirpurkar,
Srinivas V. Pericherla,
Lin Chang,
Hao Song,
Kaiheng Zou,
Huibin Zhou,
Kai Pang,
Joshua Yang,
Melissa A. Guidry,
Daniil M. Lukin,
Han Hao,
Lawrence Trask,
Geun Ho Ahn,
Andy Netherton,
Travis C. Briles,
Jordan R. Stone,
Lior Rechtman,
Jeffery S. Stone,
Kasper Van Gasse,
Jinhie L. Skarda,
Logan Su,
Dries Vercruysse
, et al. (11 additional authors not shown)
Abstract:
Modern microelectronic processors have migrated towards parallel computing architectures with many-core processors. However, such expansion comes with diminishing returns exacted by the high cost of data movement between individual processors. The use of optical interconnects has burgeoned as a promising technology that can address the limits of this data transfer. While recent pushes to enhance o…
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Modern microelectronic processors have migrated towards parallel computing architectures with many-core processors. However, such expansion comes with diminishing returns exacted by the high cost of data movement between individual processors. The use of optical interconnects has burgeoned as a promising technology that can address the limits of this data transfer. While recent pushes to enhance optical communication have focused on developing wavelength-division multiplexing technology, this approach will eventually saturate the usable bandwidth, and new dimensions of data transfer will be paramount to fulfill the ever-growing need for speed. Here we demonstrate an integrated intra- and inter-chip multi-dimensional communication scheme enabled by photonic inverse design. Using inverse-designed mode-division multiplexers, we combine wavelength- and mode- multiplexing and send massively parallel data through nano-photonic waveguides and optical fibres. Crucially, as we take advantage of an orthogonal optical basis, our approach is inherently scalable to a multiplicative enhancement over the current state of the art.
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Submitted 10 October, 2021; v1 submitted 25 March, 2021;
originally announced March 2021.
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Hybrid integrated mode-locked laser diodes with a silicon nitride extended cavity
Authors:
Ewoud Vissers,
Stijn Poelman,
Camiel Op de Beeck,
Kasper Van Gasse,
Bart Kuyken
Abstract:
Integrated semiconductor mode-locked lasers have shown promise in many applications and are readily fabricated using generic InP photonic integration platforms. However, the passive waveguides offered in such platforms have relatively high linear and nonlinear losses that limit the performance of these lasers. By extending such lasers with, for example, an external cavity the performance can be in…
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Integrated semiconductor mode-locked lasers have shown promise in many applications and are readily fabricated using generic InP photonic integration platforms. However, the passive waveguides offered in such platforms have relatively high linear and nonlinear losses that limit the performance of these lasers. By extending such lasers with, for example, an external cavity the performance can be increased considerably. In this paper, we demonstrate for the first time that a high-performance mode-locked laser can be achieved with a butt-coupling integration technique using chip scale silicon nitride waveguides. A platform-independent SiN/SU8 coupler design is used to couple between the silicon nitride external cavity and the III/V active chip. Mode-locked lasers at 2.18 GHz and 15.5 GHz repetition rates are demonstrated with Lorentzian RF linewidths several orders of magnitude smaller than what has been demonstrated on monolithic InP platforms. The RF linewidth was 31 Hz for the 2.18 GHz laser.
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Submitted 3 March, 2021; v1 submitted 25 February, 2021;
originally announced February 2021.
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Analysis of the phase-locking dynamics of a III-V-on-silicon frequency comb laser
Authors:
Alexis Verschelde,
Kasper Van Gasse,
Bart Kuyken,
Massimo Giudici,
Guillaume Huyet,
Mathias Marconi
Abstract:
We present the detailed characterization of the phase dynamics of a telecom hybrid III-V-on-silicon passively mode-locked laser with a ring cavity. We explore the various regimes of operation as a function of gain current and saturable absorber bias voltage. We use a stepped-heterodyne measurement to quantify the spectral chirp and reconstruct the pulse envelop. With this technique we are able to…
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We present the detailed characterization of the phase dynamics of a telecom hybrid III-V-on-silicon passively mode-locked laser with a ring cavity. We explore the various regimes of operation as a function of gain current and saturable absorber bias voltage. We use a stepped-heterodyne measurement to quantify the spectral chirp and reconstruct the pulse envelop. With this technique we are able to identify regimes of near-transform-limited operation and we assess the degradation of mode-locking in the comb phase relationship when saturable absorber bias voltage is changed. Finally, we present a preliminary study of the phase-locking in hybrid mode-locked operation and demonstrate transform-limited pulses.
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Submitted 20 October, 2020;
originally announced October 2020.
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An on-chip III-V-semiconductor-on-silicon laser frequency comb for gas-phase molecular spectroscopy in real-time
Authors:
Kasper Van Gasse,
Zaijun Chen,
Edoardo Vicentini,
Jeonghyun Huh,
Stijn Poelman,
Zhechao Wang,
Gunther Roelkens,
Theodor W. Hänsch,
Bart Kuyken,
Nathalie Picqué
Abstract:
Frequency combs, spectra of evenly-spaced narrow phase-coherent laser lines, have revolutionized precision measurements. On-chip frequency comb generators hold much promise for fully-integrated instruments of time and frequency metrology. While outstanding developments are being reported with Kerr, quantum cascade and microring electro-optic combs, the field of high-resolution multiplexed gas-phas…
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Frequency combs, spectra of evenly-spaced narrow phase-coherent laser lines, have revolutionized precision measurements. On-chip frequency comb generators hold much promise for fully-integrated instruments of time and frequency metrology. While outstanding developments are being reported with Kerr, quantum cascade and microring electro-optic combs, the field of high-resolution multiplexed gas-phase spectroscopy has remained inaccessible to such devices, because of their large line spacing, their small number of usable comb lines, the intensity variations between their comb lines, and their limited photonic integrability. Here we identify a path to broadband gas-phase spectroscopy on a chip. We design a low-noise III-V-on-silicon comb generator on a photonic chip, that emits a flat-top spectrum of 1400 lines at a repetition frequency of 1.0 GHz, a feature never approached by other ultra-miniaturized comb synthesizers. With dual-comb spectroscopy, our near-infrared electrically-pumped laser records high-resolution (1 GHz) sensitive multiplexed spectra with resolved comb lines, in times as short as 5 microseconds. Isotope-resolved 12C/13C detection in carbon monoxide is performed within 1 millisecond. With further developments, entire high-resolution spectroscopy laboratories-on-a-chip may be manufactured at the wafer scale. In environmental sensing, broad networks of spectrometers could be densely field-deployed to simultaneously monitor, in real time, sources and sinks of greenhouse gases, industrial pollution or noxious emissions of motor vehicles.
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Submitted 26 June, 2020;
originally announced June 2020.
