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Signature of Orbital Driven Finite Momentum Pairing in a 3D Ising Superconductor
Authors:
F. Z. Yang,
H. D. Zhang,
Saswata Mandal,
F. Y. Meng,
G. Fabbris,
A. Said,
P. Mercado Lozano,
A. Rajapitamahuni,
E. Vescovo,
C. Nelson,
S. Lin,
Y. Park,
E. M. Clements,
T. Z. Ward,
H. -N. Lee,
H. C. Lei,
C. X. Liu,
H. Miao
Abstract:
The finite momentum superconducting pairing states (FMPs), where Cooper pairs carry non-zero momentum, are believed to give rise to exotic physical phenomena including the pseudogap phase of cuprate high-Tc superconductors and Majorana fermions in topological superconductivity. FMPs can emerge in intertwined electronic liquids with strong spin-spin interactions or be induced by lifting the spin de…
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The finite momentum superconducting pairing states (FMPs), where Cooper pairs carry non-zero momentum, are believed to give rise to exotic physical phenomena including the pseudogap phase of cuprate high-Tc superconductors and Majorana fermions in topological superconductivity. FMPs can emerge in intertwined electronic liquids with strong spin-spin interactions or be induced by lifting the spin degeneracy under magnetic field as originally proposed by Fulde-Ferrell and Larkin-Ovchinnikov. In quantum materials with strong Ising-type spin-orbit coupling, such as the 2D transition metal dichalcogenides (TMDs), the spin degree of freedom is frozen enabling novel orbital driven FMPs via magnetoelectric effect. While evidence of orbital driven FMPs has been revealed in bilayer TMDs, its realization in 3D bulk materials remains an unresolved challenge. Here we report experimental signatures of FMP in a locally noncentrosymmetric bulk superconductor 4Hb-TaS2. Using hard X-ray diffraction and angle-resolved photoemission spectroscopy, we reveal unusual 2D chiral charge density wave (CDW) and weak interlayer hopping in 4Hb-TaS2. Below the superconducting transition temperature, the upper critical field, Hc2, linearly increases via decreasing temperature, and well exceeds the Pauli limit, thus establishing the dominant orbital pair-breaking mechanism. Remarkably, we discover a field-induced superconductivity-to-superconductivity transition that breaks continuous rotational symmetry of the s-wave uniform pairing in the Bardeen-Cooper-Schrieffer theory down to the six-fold rotation symmetry. Combining with a Ginzburg-Landau free energy analysis that incorporates magnetoelectric effect, our observations provide strong evidence of orbital driven FMP in the 3D quantum heterostructure 4Hb-TaS2.
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Submitted 28 July, 2024; v1 submitted 14 July, 2024;
originally announced July 2024.
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Stoichiometry-induced ferromagnetism in altermagnetic candidate MnTe
Authors:
Michael Chilcote,
Alessandro R. Mazza,
Qiangsheng Lu,
Isaiah Gray,
Qi Tian,
Qinwen Deng,
Duncan Moseley,
An-Hsi Chen,
Jason Lapano,
Jason S. Gardner,
Gyula Eres,
T. Zac Ward,
Erxi Feng,
Huibo Cao,
Valeria Lauter,
Michael A. McGuire,
Raphael Hermann,
David Parker,
Myung-Geun Han,
Asghar Kayani,
Gaurab Rimal,
Liang Wu,
Timothy R. Charlton,
Robert G. Moore,
Matthew Brahlek
Abstract:
The field of spintronics has seen a surge of interest in altermagnetism due to novel predictions and many possible applications. MnTe is a leading altermagnetic candidate that is of significant interest across spintronics due to its layered antiferromagnetic structure, high Neel temperature (TN ~ 310 K) and semiconducting properties. We present results on molecular beam epitaxy (MBE) grown MnTe/In…
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The field of spintronics has seen a surge of interest in altermagnetism due to novel predictions and many possible applications. MnTe is a leading altermagnetic candidate that is of significant interest across spintronics due to its layered antiferromagnetic structure, high Neel temperature (TN ~ 310 K) and semiconducting properties. We present results on molecular beam epitaxy (MBE) grown MnTe/InP(111) films. Here, it is found that the electronic and magnetic properties are driven by the natural stoichiometry of MnTe. Electronic transport and in situ angle-resolved photoemission spectroscopy show the films are natively metallic with the Fermi level in the valence band and the band structure is in good agreement with first principles calculations for altermagnetic spin-splitting. Neutron diffraction confirms that the film is antiferromagnetic with planar anisotropy and polarized neutron reflectometry indicates weak ferromagnetism, which is linked to a slight Mn-richness that is intrinsic to the MBE grown samples. When combined with the anomalous Hall effect, this work shows that the electronic response is strongly affected by the ferromagnetic moment. Altogether, this highlights potential mechanisms for controlling altermagnetic ordering for diverse spintronic applications.
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Submitted 6 June, 2024;
originally announced June 2024.
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Interfacially enhanced superconductivity in Fe(Te,Se)/Bi4Te3 heterostructures
Authors:
An-Hsi Chen,
Qiangsheng Lu,
Eitan Hershkovitz,
Miguel L. Crespillo,
Alessandro R. Mazza,
Tyler Smith,
T. Zac Ward,
Gyula Eres,
Shornam Gandhi,
Meer Muhtasim Mahfuz,
Vitalii Starchenko,
Khalid Hattar,
Joon Sue Lee,
Honggyu Kim,
Robert G. Moore,
Matthew Brahlek
Abstract:
Realizing topological superconductivity by integrating high-transition-temperature ($T_C$) superconductors with topological insulators can open new paths for quantum computing applications. Here, we report a new approach for increasing the superconducting transition temperature ($T_{C}^{onset}$) by interfacing the unconventional superconductor Fe(Te,Se) with the topological insulator Bi-Te system…
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Realizing topological superconductivity by integrating high-transition-temperature ($T_C$) superconductors with topological insulators can open new paths for quantum computing applications. Here, we report a new approach for increasing the superconducting transition temperature ($T_{C}^{onset}$) by interfacing the unconventional superconductor Fe(Te,Se) with the topological insulator Bi-Te system in the low-Se doping regime, near where superconductivity vanishes in the bulk. The critical finding is that the $T_{C}^{onset}$ of Fe(Te,Se) increases from nominally non-superconducting to as high as 12.5 K when $Bi_2Te_3$ is replaced with the topological phase $Bi_4Te_3$. Interfacing Fe(Te,Se) with $Bi_4Te_3$ is also found to be critical for stabilizing superconductivity in monolayer films where $T_{C}^{onset}$ can be as high as 6 K. Measurements of the electronic and crystalline structure of the $Bi_4Te_3$ layer reveal that a large electron transfer, epitaxial strain, and novel chemical reduction processes are critical factors for the enhancement of superconductivity. This novel route for enhancing $T_C$ in an important epitaxial system provides new insight on the nature of interfacial superconductivity and a platform to identify and utilize new electronic phases.
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Submitted 24 May, 2024;
originally announced May 2024.
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Embracing Disorder in Quantum Materials Design
Authors:
A. R. Mazza,
J. Yan,
S. Middey,
J. S. Gardner,
A. -H. Chen,
M. Brahlek,
T. Z. Ward
Abstract:
Many of the most exciting materials discoveries in fundamental condensed matter physics are made in systems hosting some degree of intrinsic disorder. While disorder has historically been regarded as something to be avoided in materials design, it is often of central importance to correlated and quantum materials. This is largely driven by the conceptual and theoretical ease to handle, predict, an…
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Many of the most exciting materials discoveries in fundamental condensed matter physics are made in systems hosting some degree of intrinsic disorder. While disorder has historically been regarded as something to be avoided in materials design, it is often of central importance to correlated and quantum materials. This is largely driven by the conceptual and theoretical ease to handle, predict, and understand highly uniform systems that exhibit complex interactions, symmetries and band structures. In this perspective, we highlight how flipping this paradigm has enabled exciting possibilities in the emerging field of high entropy oxide (HEO) quantum materials. These materials host high levels of cation or anion compositional disorder while maintaining unexpectedly uniform single crystal lattices. The diversity of atomic scale interactions of spin, charge, orbital, and lattice degrees of freedom are found to emerge into coherent properties on much larger length scales. Thus, altering the variance and magnitudes of the atomic scale properties through elemental selection can open new routes to tune global correlated phases such as magnetism, metal-insulator transitions, ferroelectricity, and even emergent topological responses. The strategy of embracing disorder in this way provides a much broader pallet from which functional states can be designed for next-generation microelectronic and quantum information systems.
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Submitted 28 February, 2024;
originally announced February 2024.
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High entropy ceramics for applications in extreme environments
Authors:
T. Z. Ward,
R. P. Wilkerson,
B. L. Musico,
A. Foley,
M. Brahlek,
W. J. Weber,
K. E. Sickafus,
A. R. Mazza
Abstract:
Compositionally complex materials have demonstrated extraordinary promise for structural robustness in extreme environments. Of these, the most commonly thought of are high entropy alloys, where chemical complexity grants uncommon combinations of hardness, ductility, and thermal resilience. In contrast to these metal-metal bonded systems, the addition of ionic and covalent bonding has led to the d…
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Compositionally complex materials have demonstrated extraordinary promise for structural robustness in extreme environments. Of these, the most commonly thought of are high entropy alloys, where chemical complexity grants uncommon combinations of hardness, ductility, and thermal resilience. In contrast to these metal-metal bonded systems, the addition of ionic and covalent bonding has led to the discovery of high entropy ceramics. These materials also possess outstanding structural, thermal, and chemical robustness but with a far greater variety of functional properties which enable access to continuously controllable magnetic, electronic, and optical phenomena. In this perspective, we outline the potential for high entropy ceramics in functional applications under extreme environments, where intrinsic stability may provide a new path toward inherently hardened device design. Current works on high entropy carbides, actinide bearing ceramics, and high entropy oxides are reviewed in the areas of radiation, high temperature, and corrosion tolerance where the role of local disorder is shown to create pathways toward self-healing and structural robustness. In this context, new strategies for creating future electronic, magnetic, and optical devices to be operated in harsh environments are outlined.
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Submitted 2 January, 2024;
originally announced January 2024.
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Orbital degree of freedom in high entropy oxides
Authors:
Jiaqiang Yan,
Abinash Kumar,
Miaofang Chi,
Matthew Brahlek,
Thomas Z Ward,
Michael McGuire
Abstract:
The spin, charge, and lattice degrees of freedom and their interplay in high entropy oxides were intensively investigated in recent years. However, how the orbital degree of freedom is affected by the extreme disorder in high entropy oxides hasn't been studied. In this work, using perovskite structured \textit{R}VO$_3$ as a materials playground, we report how the disorder arising from mixing diffe…
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The spin, charge, and lattice degrees of freedom and their interplay in high entropy oxides were intensively investigated in recent years. However, how the orbital degree of freedom is affected by the extreme disorder in high entropy oxides hasn't been studied. In this work, using perovskite structured \textit{R}VO$_3$ as a materials playground, we report how the disorder arising from mixing different rare earth ions at the rare earth site affects the orbital ordering of V$^{3+}$ t$_{2g}$-electrons. Since each member of \textit{R}VO$_3$ crystallizes into the same orthorhombic \textit{Pbnm} structure, the configurational entropy should not be critical for the success synthesis of (\textit{R}$_1$,...,\textit{R}$_n$)VO$_3$. The spin and orbital ordering was studied by measuring magnetic properties and specific heat of single crystals. Rather than the number and type of rare earth ions, the average ionic radius and size variance are the key factors determining the spin and orbital order in (\textit{R}$_1$,...,\textit{R}$_n$)VO$_3$. When the size variance is small, the average ionic radius takes precedence in dictating spin and orbital order. Increasing size variance suppresses the G-type orbital order and C-type magnetic order but favors the C-OO/G-AF state and the spin-orbital entanglement. These findings suggest that the extreme disorder introduced by mixing multiple rare earth ions in high entropy perovskites might be employed to preserve the orbital degree of freedom to near the magnetic ordering temperature, which is necessary for the electronic driven orbital ordering in a Kugel-Khomskii compound.
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Submitted 16 January, 2024; v1 submitted 15 November, 2023;
originally announced November 2023.
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Anisotropy of thermal conductivity oscillations in relation to the Kitaev spin liquid phase
Authors:
Heda Zhang,
Hu Miao,
Thomas Z Ward,
David G Mandrus,
Stephen E Nagler,
Michael A McGuire,
Jiaqiang Yan
Abstract:
In the presence of external magnetic field, the Kitaev model could either hosts gapped topological anyon or gapless Majorana fermions. In $α$-RuCl$_3$, the gapped and gapless cases are only separated by a thirty-degree rotation of the in-plane magnetic field vector. The presence/absence of the spectral gap is key for understanding the thermal transport behavior in $α$-RuCl$_3$. Here, we study the…
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In the presence of external magnetic field, the Kitaev model could either hosts gapped topological anyon or gapless Majorana fermions. In $α$-RuCl$_3$, the gapped and gapless cases are only separated by a thirty-degree rotation of the in-plane magnetic field vector. The presence/absence of the spectral gap is key for understanding the thermal transport behavior in $α$-RuCl$_3$. Here, we study the anisotropy of the oscillatory features of thermal conductivity in $α$-RuCl$_3$. We examine the oscillatory features of thermal conductivities (k//a, k//b) with fixed external fields and found distinct behavior for the gapped (B//a) and gapless (B//b) scenarios. Furthermore, we track the evolution of thermal resistivity ($λ_{a}$) and its oscillatory features with the rotation of in-plane magnetic fields from B//b to B//a. The thermal resistivity $λ(B,θ)$ display distinct rotational symmetries before and after the emergence of the field induced Kitaev spin liquid phase. These experiment data suggest close correlations between the oscillatory features of thermal conductivity, the underlying Kitaev spin liquid phase and the fermionic excitation it holds.
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Submitted 5 October, 2023;
originally announced October 2023.
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Emergent magnetism with continuous control in the ultrahigh conductivity layered oxide PdCoO2
Authors:
Matthew Brahlek,
Alessandro R. Mazza,
Abdulgani Annaberdiyev,
Michael Chilcote,
Gaurab Rimal,
Gábor B. Halász,
Anh Pham,
Yun-Yi Pai,
Jaron T. Krogel,
Jason Lapano,
Benjamin J. Lawrie,
Gyula Eres,
Jessica McChesney,
Thomas Prokscha,
Andreas Suter,
Seongshik Oh,
John W. Freeland,
Yue Cao,
Jason S. Gardner,
Zaher Salman,
Robert G. Moore,
Panchapakesan Ganesh,
T. Zac Ward
Abstract:
The current challenge to realizing continuously tunable magnetism lies in our inability to systematically change properties such as valence, spin, and orbital degrees of freedom as well as crystallographic geometry. Here, we demonstrate that ferromagnetism can be externally turned on with the application of low-energy helium implantation and subsequently erased and returned to the pristine state v…
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The current challenge to realizing continuously tunable magnetism lies in our inability to systematically change properties such as valence, spin, and orbital degrees of freedom as well as crystallographic geometry. Here, we demonstrate that ferromagnetism can be externally turned on with the application of low-energy helium implantation and subsequently erased and returned to the pristine state via annealing. This high level of continuous control is made possible by targeting magnetic metastability in the ultra-high conductivity, non-magnetic layered oxide PdCoO2 where local lattice distortions generated by helium implantation induce emergence of a net moment on the surrounding transition metal octahedral sites. These highly-localized moments communicate through the itinerant metal states which triggers the onset of percolated long-range ferromagnetism. The ability to continuously tune competing interactions enables tailoring precise magnetic and magnetotransport responses in an ultra-high conductivity film and will be critical to applications across spintronics.
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Submitted 27 August, 2023; v1 submitted 25 July, 2023;
originally announced July 2023.
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Hole doping in compositionally complex correlated oxide enables tunable exchange biasing
Authors:
Alessandro R. Mazza,
Elizabeth Skoropata,
Jason Lapano,
Michael A. Chilcote,
Cameron Jorgensen,
Nan Tang,
Zheng Gai,
John Singleton,
Matthew J. Brahlek,
Dustin A. Gilbert,
Thomas Z. Ward
Abstract:
Magnetic interfaces and the phenomena arising from them drive both the design of modern spintronics and fundamental research. Recently, it was revealed that through designing magnetic frustration in configurationally complex entropy stabilized oxides, exchange bias can occur in structurally single crystal films. This eliminates the need for complex heterostructures and nanocomposites in the design…
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Magnetic interfaces and the phenomena arising from them drive both the design of modern spintronics and fundamental research. Recently, it was revealed that through designing magnetic frustration in configurationally complex entropy stabilized oxides, exchange bias can occur in structurally single crystal films. This eliminates the need for complex heterostructures and nanocomposites in the design and control of magnetic response phenomena. In this work, we demonstrate through hole doping of a high entropy perovskite oxide that tuning of magnetic responses can be achieved. With detailed magnetometry, we show magnetic coupling exhibiting a variety of magnetic responses including exchange bias and antiferromagnetic spin reversal in the entropy stabilized ABO3 perovskite oxide La1-xSrx(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 family. We find that manipulation of the A-site charge state can be used to balance magnetic phase compositions and coupling responses. This allows for the creation of highly tunable exchange bias responses. In the low Sr doping regime, a spin frustrated region arising at the antiferromagnetic phase boundary is shown to directly couple to the antiferromagnetic moments of the film and emerges as the dominant mechanism, leading to a vertical shift of magnetization loops in response to field biasing. At higher concentrations, direct coupling of antiferromagnetic and ferromagnetic regions is observed. This tunability of magnetic coupling is discussed within the context of these three competing magnetic phases, revealing critical features in designing exchange bias through exploiting spin frustration and disorder in high entropy oxides.
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Submitted 28 March, 2023;
originally announced March 2023.
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Tuning Structural, Transport and Magnetic Properties of Epitaxial SrRuO3 through Ba-Substitution
Authors:
Zeeshan Ali,
Zhen Wang,
Alessandro R. Mazza,
Mohammad Saghayezhian,
Roshan Nepal,
Thomas Z. Ward,
Yimei Zhu,
Jiandi Zhang
Abstract:
The perovskite ruthenates (ARuO3, A = Ca, Ba, or Sr) exhibit unique properties owing to a subtle interplay of crystal structure and electronic-spin degrees of freedom. Here, we demonstrate an intriguing continuous tuning of crystal symmetry from orthorhombic to tetragonal (no octahedral rotations) phases in epitaxial SrRuO3 achieved via Ba-substitution (Sr1-xBaxRuO3 with 0 < x < 0.7). An initial B…
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The perovskite ruthenates (ARuO3, A = Ca, Ba, or Sr) exhibit unique properties owing to a subtle interplay of crystal structure and electronic-spin degrees of freedom. Here, we demonstrate an intriguing continuous tuning of crystal symmetry from orthorhombic to tetragonal (no octahedral rotations) phases in epitaxial SrRuO3 achieved via Ba-substitution (Sr1-xBaxRuO3 with 0 < x < 0.7). An initial Ba-substitution to SrRuO3 not only changes the ferromagnetic properties, but also tunes the perpendicular magnetic anisotropy via flattening the Ru-O-Ru bond angle (to 180°), resulting in the maximum Curie temperature and an extinction of RuO6 rotational distortions at x = 0.20. For x > 0.2, the suppression of RuO6 octahedral rotational distortion dominantly enhances the ferromagnetism in the system, though competing with the impact of the RuO6 tetragonal distortion. Further increasing x > 0.2 gradually enhances the tetragonal-type distortion, resulting in the tuning of Ru-4d orbital occupancy and suppression of ferromagnetism. Our results demonstrate that isovalent substitution of the A-site cations significantly and controllably impacts both electronic and magnetic properties of perovskite oxides.
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Submitted 28 January, 2023; v1 submitted 30 November, 2022;
originally announced December 2022.
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What is in a Name: Defining -High Entropy- Oxides
Authors:
Matthew Brahlek,
Maria Gazda,
Veerle Keppens,
Alessandro R. Mazza,
Scott J. McCormack,
Aleksandra Mielewczyk-Gryń,
Brianna Musico,
Katharine Page,
Christina Rost,
Susan B. Sinnott,
Cormac Toher,
Thomas Z. Ward,
Ayako Yamamoto
Abstract:
High entropy oxides are emerging as an exciting new avenue to design highly tailored functional behaviors that have no traditional counterparts. Study and application of these materials are bringing together scientists and engineers from physics, chemistry, and materials science. The diversity of each of these disciplines comes with perspectives and jargon that may be confusing to those outside of…
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High entropy oxides are emerging as an exciting new avenue to design highly tailored functional behaviors that have no traditional counterparts. Study and application of these materials are bringing together scientists and engineers from physics, chemistry, and materials science. The diversity of each of these disciplines comes with perspectives and jargon that may be confusing to those outside of the individual fields, which can result in miscommunication of important aspects of research. In this perspective, we provide examples of research and characterization taken from these different fields to provide a framework for classifying the differences between compositionally complex oxides, high entropy oxides, and entropy stabilized oxides, which is intended to bring a common language to this emerging area. We highlight the critical importance of understanding a materials crystallinity, composition, and mixing length scales in determining its true definition.
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Submitted 4 November, 2022; v1 submitted 26 August, 2022;
originally announced August 2022.
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Surface-Driven Evolution of the Anomalous Hall Effect in Magnetic Topological Insulator MnBi2Te4 Thin Films
Authors:
Alessandro R. Mazza,
Jason Lapano,
Harry M. Meyer III,
Christopher T. Nelson,
Tyler Smith,
Yun-Yi Pai,
Kyle Noordhoek,
Benjamin J. Lawrie,
Timothy R. Charlton,
Robert G. Moore,
T. Zac Ward,
Mao-Hua Du,
Gyula Eres,
Matthew Brahlek
Abstract:
Understanding the effects of interfacial modification to the functional properties of magnetic topological insulator thin films is crucial for developing novel technological applications from spintronics to quantum computing. Here, we report that a large electronic and magnetic response is induced in the intrinsic magnetic topological insulator MnBi2Te4 by controlling the propagation of surface ox…
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Understanding the effects of interfacial modification to the functional properties of magnetic topological insulator thin films is crucial for developing novel technological applications from spintronics to quantum computing. Here, we report that a large electronic and magnetic response is induced in the intrinsic magnetic topological insulator MnBi2Te4 by controlling the propagation of surface oxidation. We show that the formation of the surface oxide layer is confined to the top 1-2 unit cells but drives large changes in the overall magnetic response. Specifically, we observe a dramatic reversal of the sign of the anomalous Hall effect driven by finite thickness magnetism, which indicates that the film splits into distinct magnetic layers each with a unique electronic signature. These data reveal a delicate dependence of the overall magnetic and electronic response of MnBi2Te4 on the stoichiometry of the top layers. Our study suggests that perturbations resulting from surface oxidation may play a non-trivial role in the stabilization of the quantum anomalous Hall effect in this system and that understanding targeted modifications to the surface may open new routes for engineering novel topological and magnetic responses in this fascinating material.
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Submitted 22 May, 2022;
originally announced May 2022.
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Searching for Superconductivity in High Entropy Oxide Ruddlesden-Popper Cuprate Films
Authors:
Alessandro R. Mazza,
Xingyao Gao,
Daniel J. Rossi,
Brianna L. Musico,
Tyler W. Valentine,
Zachary Kennedy,
Jie Zhang,
Jason Lapano,
Veerle Keppens,
Robert G. Moore,
Matthew Brahlek,
Christina M. Rost,
Thomas Zac Ward
Abstract:
In this work, the high entropy oxide A2CuO4 Ruddlesden-Popper (La0.2Pr0.2Nd0.2Sm0.2Eu0.2)2CuO4 is explored by charge doping with Ce+4 and Sr+2 at concentrations known to induce superconductivity in the simple parent compounds, Nd2CuO4 and La2CuO4. Electron doped (La0.185Pr0.185Nd0.185Sm0.185Eu0.185Ce0.075)2CuO4 and hole doped (La0.18Pr0.18Nd0.18Sm0.18Eu0.18Sr0.1)2CuO4 are synthesized and shown to…
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In this work, the high entropy oxide A2CuO4 Ruddlesden-Popper (La0.2Pr0.2Nd0.2Sm0.2Eu0.2)2CuO4 is explored by charge doping with Ce+4 and Sr+2 at concentrations known to induce superconductivity in the simple parent compounds, Nd2CuO4 and La2CuO4. Electron doped (La0.185Pr0.185Nd0.185Sm0.185Eu0.185Ce0.075)2CuO4 and hole doped (La0.18Pr0.18Nd0.18Sm0.18Eu0.18Sr0.1)2CuO4 are synthesized and shown to be single crystal, epitaxially strained, and highly uniform. Transport measurements demonstrate that all as-grown films are insulating regardless of doping. Annealing studies show that resistivity can be tuned by modifying oxygen stoichiometry and inducing metallicity but without superconductivity. These results in turn are connected to extended x-ray absorption fine structure (EXAFS) results indicating that the lack of superconductivity in the high entropy cuprates likely originates from a large distortion within the Cu-O plane (σ2>0.015 Å2) due to A-site cation size variance, which drives localization of charge carriers. These findings describe new opportunities for controlling charge- and orbital-mediated functional responses in Ruddlesden-Popper crystal structures, driven by balancing of cation size and charge variances that may be exploited for functionally important behaviors such as superconductivity, antiferromagnetism, and metal-insulator transitions, while opening less understood phase spaces hosting doped Mott insulators, strange metals, quantum criticality, pseudogaps, and ordered charge density waves.
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Submitted 18 November, 2021;
originally announced November 2021.
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Design and realization of Ohmic and Schottky interfaces for oxide electronics
Authors:
Jie Zhang,
Yun-Yi Pai,
Jason Lapano,
Alessandro R. Mazza,
Ho Nyung Lee,
Rob Moore,
Benjamin J. Lawrie,
T. Zac Ward,
Gyula Eres,
Valentino R. Cooper,
Matthew Brahlek
Abstract:
Understanding band alignment and charge transfer at complex oxide interfaces is critical to tailoring and utilizing their diverse functionality. Towards this goal, we design and experimentally validate both Ohmic- and Schottky-like charge transfers at oxide/oxide semiconductor/metal interfaces. We utilize a method for predicting band alignment and charge transfer in ABO3 perovskites, where previou…
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Understanding band alignment and charge transfer at complex oxide interfaces is critical to tailoring and utilizing their diverse functionality. Towards this goal, we design and experimentally validate both Ohmic- and Schottky-like charge transfers at oxide/oxide semiconductor/metal interfaces. We utilize a method for predicting band alignment and charge transfer in ABO3 perovskites, where previously established rules for simple semiconductors fail. The prototypical systems chosen are the rare class of oxide metals, SrBO3 with B=V-Ta, when interfaced with the multifaceted semiconducting oxide, SrTiO3. For B=Nb and Ta, we confirm that a large accumulation of charge occurs in SrTiO3 due to higher energy Nb and Ta d-states relative to Ti; this gives rise to a high mobility metallic interface, which is an ideal epitaxial oxide/oxide Ohmic contact. On the other hand, for B=V, there is no charge transfer into the SrTiO3 interface, which serves as a highly conductive epitaxial gate metal. Going beyond these specific cases, this work opens the door to integrating the vast phenomena of ABO3 perovskites into a wide range of practical devices.
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Submitted 22 October, 2021;
originally announced October 2021.
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Self-regulated growth of candidate topological superconducting parkerite by molecular beam epitaxy
Authors:
Jason Lapano,
Yun-Yi Pai,
Alessandro Mazza,
Jie Zhang,
Tamara Isaacs-Smith,
Patrick Gemperline,
Lizhi Zhang,
Haoxiang Li,
Ho Nyung Lee,
Hu Miao,
Gyula Eres,
Mina Yoon,
Ryan Comes,
T. Zac Ward,
Benjamin J. Lawrie,
Michael McGuire,
Robert G. Moore,
Christopher T. Nelson,
Andrew May,
Matthew Brahlek
Abstract:
Ternary chalcogenides such as the parkerites and shandites are a broad class of materials exhibiting rich diversity of transport and magnetic behavior as well as an array of topological phases including Weyl and Dirac nodes. However, they remain largely unexplored as high-quality epitaxial thin films. Here, we report the self-regulated growth of thin films of the strong spin-orbit coupled supercon…
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Ternary chalcogenides such as the parkerites and shandites are a broad class of materials exhibiting rich diversity of transport and magnetic behavior as well as an array of topological phases including Weyl and Dirac nodes. However, they remain largely unexplored as high-quality epitaxial thin films. Here, we report the self-regulated growth of thin films of the strong spin-orbit coupled superconductor Pd3Bi2Se2 on SrTiO3 by molecular beam epitaxy. Films are found to grow in a self-regulated fashion, where, in excess Se, the temperature and relative flux ratio of Pd to Bi controls the formation of Pd3Bi2Se2 due to the combined volatility of Bi, Se, and Bi-Se bonded phases. The resulting films are shown to be of high structural quality, the stoichiometry is independent of the Pd:Bi and Se flux ratio and exhibit a superconducting transition temperature of 800 mK and critical field of 17.7 +/- 0.5 mT, as probed by transport as well as magnetometry. Understanding and navigating the growth of the chemically and structurally diverse classes of ternary chalcogenides opens a vast space for discovering new phenomena as well as enabling new applications.
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Submitted 25 October, 2021; v1 submitted 14 July, 2021;
originally announced July 2021.
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High Entropy Oxide Relaxor Ferroelectrics
Authors:
Yogesh Sharma,
Min-Cheol Lee,
Krishna C. Pitike,
Karuna K. Mishra,
Qiang Zheng,
Xiang Gao,
Brianna L. Musico,
Alessandro R. Mazza,
Ram S. Katiyar,
Veerle Keppens,
Matthew Brahlek,
Dmitry A. Yarotski,
Rohit P. Prasankumar,
Aiping Chen,
Valentino R. Cooper,
T. Zac Ward
Abstract:
Relaxor ferrolectrics are important in technological applications due to a strong electromechanical response, energy storage capacity, electrocaloric effect, and pyroelectric energy conversion properties. Current efforts to discover and design new materials in this class generally rely on substitutional doping of known ferroelectrics, as slight changes to local compositional order can significantl…
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Relaxor ferrolectrics are important in technological applications due to a strong electromechanical response, energy storage capacity, electrocaloric effect, and pyroelectric energy conversion properties. Current efforts to discover and design new materials in this class generally rely on substitutional doping of known ferroelectrics, as slight changes to local compositional order can significantly affect the Curie temperature, morphotropic phase boundary, and electromechanical responses. In this work, we demonstrate that moving to the strong limit of compositional complexity in an ABO3 perovskite allows stabilization of novel relaxor responses that do not rely on a single narrow phase transition region. Entropy-assisted synthesis approaches are used to create single crystal Ba(Ti0.2Sn0.2Zr0.2Hf0.2Nb0.2)O3 [Ba(5B)O] films. The high levels of configurational disorder present in this system is found to influence dielectric relaxation, phase transitions, nano-polar domain formation, and Curie temperature. Temperature-dependent dielectric, Raman spectroscopy and second-harmonic generation measurements reveal multiple phase transitions, a high Curie temperature of 570 K, and the relaxor ferroelectric nature of Ba(5B)O films. The first principles theory calculations are used to predict possible combinations of cations to quantify the relative feasibility of formation of highly disordered single-phase perovskite systems. The ability to stabilize single-phase perovskites with such a large number of different cations on the B-sites offers new possibilities for designing high-performance materials for piezoelectric, pyroelectric and tunable dielectric applications.
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Submitted 1 June, 2021;
originally announced June 2021.
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Flat Band Induced Negative Magnetoresistance in Multi-Orbital Kagome Metal
Authors:
Jie Zhang,
T. Yilmaz,
J. W. R. Meier,
J. Y. Pai,
J. Lapano,
H. X. Li,
K. Kaznatcheev,
E. Vescovo,
A. Huon,
M. Brahlek,
T. Z. Ward,
B. Lawrie,
R. G. Moore,
H. N. Lee,
Y. L. Wang,
H. Miao,
B. Sales
Abstract:
Electronic flat band systems are a fertile platform to host correlation-induced quantum phenomena such as unconventional superconductivity, magnetism and topological orders. While flat band has been established in geometrically frustrated structures, such as the kagome lattice, flat band-induced correlation effects especially in those multi-orbital bulk systems are rarely seen. Here we report nega…
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Electronic flat band systems are a fertile platform to host correlation-induced quantum phenomena such as unconventional superconductivity, magnetism and topological orders. While flat band has been established in geometrically frustrated structures, such as the kagome lattice, flat band-induced correlation effects especially in those multi-orbital bulk systems are rarely seen. Here we report negative magnetoresistance and signature of ferromagnetic fluctuations in a prototypical kagome metal CoSn, which features a flat band in proximity to the Fermi level. We find that the magnetoresistance is dictated by electronic correlations via Fermi level tuning. Combining with first principles and model calculations, we establish flat band-induced correlation effects in a multi-orbital electronic system, which opens new routes to realize unconventional superconducting and topological states in geometrically frustrated metals.
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Submitted 19 May, 2021; v1 submitted 18 May, 2021;
originally announced May 2021.
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Designer Magnetism in High Entropy Oxides
Authors:
Alessandro R. Mazza,
Elizabeth Skoropata,
Yogesh Sharma,
Jason Lapano,
Thomas W. Heitmann,
Brianna L. Musico,
Veerle Keppens,
Zheng Gai,
John W. Freeland,
Timothy R. Charlton,
Matthew J. Brahlek,
Adriana Moreo,
Elbio Dagotto,
Thomas Z. Ward
Abstract:
Disorder can have a dominating influence on correlated and quantum materials leading to novel behaviors which have no clean limit counterparts. In magnetic systems, spin and exchange disorder can provide access to quantum criticality, frustration, and spin dynamics, but broad tunability of these responses and a deeper understanding of strong limit disorder is lacking. In this work, we demonstrate…
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Disorder can have a dominating influence on correlated and quantum materials leading to novel behaviors which have no clean limit counterparts. In magnetic systems, spin and exchange disorder can provide access to quantum criticality, frustration, and spin dynamics, but broad tunability of these responses and a deeper understanding of strong limit disorder is lacking. In this work, we demonstrate that high entropy oxides present an unexplored route to designing quantum materials in which the presence of strong local compositional disorder hosted on a positionally ordered lattice can be used to generate highly tunable emergent magnetic behavior--from macroscopically ordered states to frustration-driven dynamic spin interactions. Single crystal La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 films are used as a structurally uniform model system hosting a magnetic sublattice with massive microstate disorder in the form of site-to-site spin and exchange type inhomogeneity. A classical Heisenberg model is found to be sufficient to describe how compositionally disordered systems can paradoxically host long-range magnetic uniformity and demonstrates that balancing the populating elements based on their discrete quantum parameters can be used to give continuous control over ordering types and critical temperatures. Theory-guided experiments show that composite exchange values derived from the complex mix of microstate interactions can be used to design the required compositional parameters for a desired response. These predicted materials are synthesized and found to possess an incipient quantum critical point when magnetic ordering types are designed to be in direct competition; this leads to highly controllable exchange bias sensitivity in the monolithic single crystal films previously accessible only in intentionally designed bilayer heterojunctions.
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Submitted 12 August, 2021; v1 submitted 12 April, 2021;
originally announced April 2021.
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Magnetic Texture in Insulating Single Crystal High Entropy Oxide Spinel Films
Authors:
Yogesh Sharma,
Alessandro R. Mazza,
Brianna L. Musico,
Elizabeth Skoropata,
Roshan Nepal,
Rongying Jin,
Anton V. Ievlev,
Liam Collins,
Zheng Gai,
Aiping Chen,
Matthew Brahlek,
Veerle Keppens,
Thomas Z. Ward
Abstract:
Magnetic insulators are important materials for a range of next generation memory and spintronic applications. Structural constraints in this class of devices generally require a clean heterointerface that allows effective magnetic coupling between the insulating layer and the conducting layer. However, there are relatively few examples of magnetic insulators which can be synthesized with surface…
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Magnetic insulators are important materials for a range of next generation memory and spintronic applications. Structural constraints in this class of devices generally require a clean heterointerface that allows effective magnetic coupling between the insulating layer and the conducting layer. However, there are relatively few examples of magnetic insulators which can be synthesized with surface qualities that would allow these smooth interfaces and precisely tuned interfacial magnetic exchange coupling which might be applicable at room temperature. In this work, we demonstrate an example of how the configurational complexity in the magnetic insulator layer can be used to realize these properties. The entropy-assisted synthesis is used to create single crystal (Mg0.2Ni0.2Fe0.2Co0.2Cu0.2)Fe2O4 films on substrates spanning a range of strain states. These films show smooth surfaces, high resistivity, and strong magnetic responses at room temperature. Local and global magnetic measurements further demonstrate how strain can be used to manipulate magnetic texture and anisotropy. These findings provide insight into how precise magnetic responses can be designed using compositionally complex materials that may find application in next generation magnetic devices.
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Submitted 30 March, 2021;
originally announced March 2021.
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Adsorption-controlled growth of MnTe(Bi2Te3)n by molecular beam epitaxy exhibiting stoichiometry-controlled magnetism
Authors:
Jason Lapano,
Lauren Nuckols,
Alessandro R. Mazza,
Yun-Yi Pai,
Jie Zhang,
Ben Lawrie,
Rob G. Moore,
Gyula Eres,
Ho Nyung Lee,
Mao-Hua Du,
T. Zac Ward,
Joon Sue Lee,
William J. Weber,
Yanwen Zhang,
Matthew Brahlek
Abstract:
We report the growth of the intrinsic magnetic topological system MnTe(Bi2Te3)n by molecular beam epitaxy. By mapping the temperature and the Bi:Mn flux ratio, it is shown that there is a narrow growth window for the n=1 phase MnBi2Te4 with 2.0<Bi:Mn<2.6 at 225 °C. Here the films are stoichiometric and excess Bi and Te is not incorporated. At higher flux ratios (Bi:Mn>4.5) it is found that the n =…
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We report the growth of the intrinsic magnetic topological system MnTe(Bi2Te3)n by molecular beam epitaxy. By mapping the temperature and the Bi:Mn flux ratio, it is shown that there is a narrow growth window for the n=1 phase MnBi2Te4 with 2.0<Bi:Mn<2.6 at 225 °C. Here the films are stoichiometric and excess Bi and Te is not incorporated. At higher flux ratios (Bi:Mn>4.5) it is found that the n = 2 MnBi4Te7 phase is stabilized. Transport measurements indicate that the MnBi2Te4 and MnBi4Te7 undergo magnetic transitions around 25 K, and 10 K, respectively, consistent with antiferromagnetic phases found in the bulk. Further, for Mn-rich conditions (Bi:Mn<2), ferromagnetism emerges that exhibits a clear hysteretic state in the Hall effect, which likely indicates Mn-doped MnBi2Te4. Understanding how to grow ternary chalcogenide phases is the key to synthesizing new materials and to interface magnetism and topology, which together are routes to realize and control exotic quantum phenomena.
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Submitted 27 October, 2020;
originally announced October 2020.
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Strong spin-dephasing in a topological insulator - paramagnet heterostructure
Authors:
Jason Lapano,
Alessandro R. Mazza,
Haoxiang Li,
Debangshu Mukherjee,
Elizabeth M. Skoropata,
Jong Mok Ok,
Hu Miao,
Robert G. Moore,
Thomas Z. Ward,
Gyula Eres,
Ho Nyung Lee,
Matthew Brahlek
Abstract:
The interface between magnetic materials and topological insulators can drive the formation of exotic phases of matter and enable functionality through manipulation of the strong spin polarized transport. Here, we report that the spin-momentum-locked transport in the topological insulator Bi$_2$Se$_3$ is completely suppressed by scattering at a heterointerface with the kagome-lattice paramagnet, C…
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The interface between magnetic materials and topological insulators can drive the formation of exotic phases of matter and enable functionality through manipulation of the strong spin polarized transport. Here, we report that the spin-momentum-locked transport in the topological insulator Bi$_2$Se$_3$ is completely suppressed by scattering at a heterointerface with the kagome-lattice paramagnet, Co$_7$Se$_8$. Bi$_2$Se$_{3-}$Co$_7$Se$_{8-}$Bi$_2$Se$_3$ trilayer heterostructures were grown using molecular beam epitaxy. Magnetotransport measurements revealed a substantial suppression of the weak antilocalization effect for Co$_7$Se$_8$ at thicknesses as thin as a monolayer, indicating a strong dephasing mechanism. Bi$_{2-x}$Co$_x$Se$_3$ films, where Co is in a non-magnetic $3^+$ state, show weak antilocalization that survives to $x = 0.5$, which, in comparison with the heterostructures, suggests the unordered moments of the Co$^{2+}$ act as a far stronger dephasing element. This work highlights several important points regarding spin-polarized transport in topological insulator interfaces and how magnetic materials can be integrated with topological materials to realize both exotic phases as well as novel device functionality.
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Submitted 14 September, 2020;
originally announced September 2020.
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Applying configurational complexity to the 2D Ruddlesden-Popper crystal structure
Authors:
Wenrui Zhang,
Alessandro R. Mazza,
Elizabeth Skoropata,
Debangshu Mukherjee,
Brianna L. Musico,
Jie Zhang,
Veerle Keppens,
Lihua Zhang,
Kim Kisslinger,
Eli Stavitski,
Mathew Brahlek,
John W. Freeland,
Ping Lu,
Thomas Z. Ward
Abstract:
The 2D layered Ruddlesden-Popper crystal structure can host a broad range of functionally important behaviors. Here we establish extraordinary configurational disorder in a two dimensional layered Ruddlesden-Popper (RP) structure using entropy stabilization assisted synthesis. A protype A2CuO4 RP cuprate oxide with five components (La, Pr, Nd, Sm, Eu) on the A-site sublattice is designed and fabri…
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The 2D layered Ruddlesden-Popper crystal structure can host a broad range of functionally important behaviors. Here we establish extraordinary configurational disorder in a two dimensional layered Ruddlesden-Popper (RP) structure using entropy stabilization assisted synthesis. A protype A2CuO4 RP cuprate oxide with five components (La, Pr, Nd, Sm, Eu) on the A-site sublattice is designed and fabricated into epitaxial single crystal films using pulsed laser deposition. By comparing (La0.2Pr0.2Nd0.2Sm0.2Eu0.2)2CuO4 crystals grown under identical conditions but different substrates, it is found that heteroepitaxial strain plays an important role in crystal phase formation. When grown on a near lattice matched substrate, the high entropy oxide film features a T'-type RP structure with uniform A-site cation mixing and square-planar CuO4 units, however, growing under strong compressive strain results in a single crystal non-RP cubic phase consistent with a CuX2O4 spinel structure. These observations are made with a range of combined characterizations using X-ray diffraction, atomic-resolution scanning transmission electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray absorption spectroscopy measurements. Designing configurational complexity and moving between 2D layered RP and 3D cubic crystal structures in this class of cuprate materials opens many opportunities for new design strategies related to magnetoresistance, unconventional superconductivity, ferroelectricity, catalysis, and ion transport.
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Submitted 24 May, 2020;
originally announced May 2020.
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Unexpected crystalline homogeneity from the disordered bond network in La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 films
Authors:
Matthew Brahlek,
Alessandro R. Mazza,
Krishna Chaitanya Pitike,
Elizabeth Skoropata,
Jason Lapano,
Gyula Eres,
Valentino R. Cooper,
T. Zac Ward
Abstract:
Designing and understanding functional electronic and magnetic properties in perovskite oxides requires controlling and tuning the underlying crystal lattice. Here we report the structure, including oxygen and cation positions, of a single-crystal, entropy stabilized perovskite oxide film of La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 grown on SrTiO3 (001). The parent materials range from orthorhombic (LaCrO3…
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Designing and understanding functional electronic and magnetic properties in perovskite oxides requires controlling and tuning the underlying crystal lattice. Here we report the structure, including oxygen and cation positions, of a single-crystal, entropy stabilized perovskite oxide film of La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 grown on SrTiO3 (001). The parent materials range from orthorhombic (LaCrO3, LaMnO3 and LaFeO3) to rhombohedral (LaCoO3 and LaNiO3), and first principles calculations indicate that these structural motifs are nearly degenerate in energy and should be highly distorted site-to-site. Despite this extraordinary local configurational disorder on the B-site sublattice, we find a structure with unexpected macroscopic crystalline homogeneity with a clear orthorhombic unit cell, whose orientation is demonstrated to be controlled by the strain and crystal structure of the substrate for films grown on (La0.3Sr0.7)(Al0.65Ta0.35)O3 (LSAT) and NdGaO3 (110). Furthermore, quantification of the atom positions within the unit cell reveal that the orthorhombic distortions are small, close to LaCrO3, which may be driven by a combination of disorder averaging and the average ionic radii. This is the first step towards understanding the rules for designing new crystal motifs and tuning functional properties through controlled configurational complexity.
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Submitted 6 April, 2020;
originally announced April 2020.
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Magnetic anisotropy in single crystal high entropy perovskite oxide La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 films
Authors:
Yogesh Sharma,
Qiang Zheng,
Alessandro R. Mazza,
Elizabeth Skoropata,
Thomas Heitmann,
Zheng Gai,
Brianna Musico,
Paul F. Miceli,
Brian C. Sales,
Veerle Keppens,
Matthew Brahlek,
Thomas Zac Ward
Abstract:
Local configurational disorder can have a dominating role in the formation of macroscopic functional responses in strongly correlated materials. Here, we use entropy-stabilization synthesis to create single crystal epitaxial ABO3 perovskite thin films with equal atomic concentration of 3d transition metal cations on the B-site sublattice. X-ray diffraction, atomic force microscopy, and scanning tr…
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Local configurational disorder can have a dominating role in the formation of macroscopic functional responses in strongly correlated materials. Here, we use entropy-stabilization synthesis to create single crystal epitaxial ABO3 perovskite thin films with equal atomic concentration of 3d transition metal cations on the B-site sublattice. X-ray diffraction, atomic force microscopy, and scanning transmission electron microscopy of La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 (L5BO) films demonstrate excellent crystallinity, smooth film surfaces, and uniform mixing of the 3d transition metal cations throughout the B-site sublattice. The magnetic properties are strongly dependent on substrate-induced lattice anisotropy and suggest the presence of long-range magnetic order in these exceptionally disordered materials. The ability to populate multiple elements onto a single sublattice in complex crystal structures opens new possibilities to design functionality in correlated systems and enable novel fundamental studies seeking to understand how diverse local bonding environments can work to generate macroscopic responses, such as those driven by electron-phonon channels and complex exchange interaction pathways.
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Submitted 11 September, 2019;
originally announced September 2019.
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Self-Assembled Room Temperature Multiferroic BiFeO3-LiFe5O8 Nanocomposites
Authors:
Yogesh Sharma,
Radhe Agarwal,
Liam Collins,
Qiang Zheng,
Anton V. Ivelev,
Raphael P. Hermann,
Valentino R. Cooper,
Santosh KC,
Ilia N. Ivanov,
Ram S. Katiyar,
Sergei V. Kalinin,
Ho Nyung Lee,
Seungbum Hong,
Thomas Z. Ward
Abstract:
Multiferroic materials have driven significant research interest due to their promising technological potential. Developing new room-temperature multiferroics and understanding their fundamental properties are important to reveal unanticipated physical phenomena and potential applications. Here, a new room temperature multiferroic nanocomposite comprised of an ordered ferrimagnetic spinel LiFe5O8…
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Multiferroic materials have driven significant research interest due to their promising technological potential. Developing new room-temperature multiferroics and understanding their fundamental properties are important to reveal unanticipated physical phenomena and potential applications. Here, a new room temperature multiferroic nanocomposite comprised of an ordered ferrimagnetic spinel LiFe5O8 (LFO) and a ferroelectric perovskite BiFeO3 (BFO) is presented. We observed that lithium (Li)-doping in BFO favors the formation of LFO spinel as a secondary phase during the synthesis of LixBi1-xFeO3 nanoceramics. Multimodal functional and chemical imaging methods are used to map the relationship between doping-induced phase separation and local ferroic properties in both the BFO-LFO composite ceramics and self-assembled nanocomposite thin films. The energetics of phase separation in Li doped BFO and the formation of BFO-LFO composites is supported by first principles calculations. These findings shed light on Li-ion role in the formation of a functionally important room temperature multiferroic and open a new approach in the synthesis of light element doped nanocomposites.
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Submitted 13 August, 2019;
originally announced August 2019.
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Competing Phases in Epitaxial Vanadium Dioxide at Nanoscale
Authors:
Yogesh Sharma,
Martin V. Holt,
Nouamane Laanait,
Xiang Gao,
Ilia Ivanov,
Liam Collins,
Changhee Sohn,
Zhaoliang Liao,
Elizabeth Skoropata,
Sergei V. Kalinin,
Nina Balke,
Gyula Eres,
Thomas Z. Ward,
Ho Nyung Lee
Abstract:
Phase competition in correlated oxides offers tantalizing opportunities as many intriguing physical phenomena occur near the phase transitions. Owing to a sharp metal-insulator transition (MIT) near room temperature, correlated vanadium dioxide (VO2) exhibits a strong competition between insulating and metallic phases that is important for practical applications. However, the phase boundary underg…
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Phase competition in correlated oxides offers tantalizing opportunities as many intriguing physical phenomena occur near the phase transitions. Owing to a sharp metal-insulator transition (MIT) near room temperature, correlated vanadium dioxide (VO2) exhibits a strong competition between insulating and metallic phases that is important for practical applications. However, the phase boundary undergoes strong modification when strain is involved, yielding complex phase transitions. Here, we report the emergence of the nanoscale M2 phase domains in VO2 epitaxial films under anisotropic strain relaxation. The phase states of the films are imaged by multi-length-scale probes, detecting the structural and electrical properties in individual local domains. Competing evolution of the M1 and M2 phases indicates a critical role of lattice-strain on both the stability of the M2 Mott phase and the energetics of the MIT in VO2 films. This study demonstrates how strain engineering can be utilized to design phase states, which allow deliberate control of MIT behavior at the nanoscale in epitaxial VO2 films.
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Submitted 13 August, 2019;
originally announced August 2019.
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Growth of metallic delafossite PdCoO2 by molecular beam epitaxy
Authors:
Matthew Brahlek,
Gaurab Rimal,
Jong Mok Ok,
Debangshu Mukherjee,
Alessandro R. Mazza,
Qiyang Lu,
Ho Nyung Lee,
T. Zac Ward,
Raymond R. Unocic,
Gyula Eres,
Seongshik Oh
Abstract:
The Pd, and Pt based ABO2 delafossites are a unique class of layered, triangular oxides with 2D electronic structure and a large conductivity that rivals the noble metals. Here, we report successful growth of the metallic delafossite PdCoO2 by molecular beam epitaxy (MBE). The key challenge is controlling the oxidation of Pd in the MBE environment where phase-segregation is driven by the reduction…
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The Pd, and Pt based ABO2 delafossites are a unique class of layered, triangular oxides with 2D electronic structure and a large conductivity that rivals the noble metals. Here, we report successful growth of the metallic delafossite PdCoO2 by molecular beam epitaxy (MBE). The key challenge is controlling the oxidation of Pd in the MBE environment where phase-segregation is driven by the reduction of PdCoO2 to cobalt oxide and metallic palladium. This is overcome by combining low temperature (300 °C) atomic layer-by-layer MBE growth in the presence of reactive atomic oxygen with a post-growth high-temperature anneal. Thickness dependence (5-265 nm) reveals that in the thin regime (<75 nm), the resistivity scales inversely with thickness, likely dominated by surface scattering; for thicker films the resistivity approaches the values reported for the best bulk-crystals at room temperature, but the low temperature resistivity is limited by structural twins. This work shows that the combination of MBE growth and a post-growth anneal provides a route to creating high quality films in this interesting family of layered, triangular oxides.
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Submitted 15 July, 2019; v1 submitted 29 May, 2019;
originally announced May 2019.
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Exploiting symmetry-mismatch to control magnetism in a ferroelastic heterostructure
Authors:
Er-Jia Guo,
Ryan Desautels,
Dongkyu Lee,
Manuel A. Roldan,
Zhaoliang Liao,
Timothy Charlton,
Haile Ambaye,
Jamie Molaison,
Reinhard Boehler,
David Keavney,
Andreas Herklotz,
T. Zac Ward,
Ho Nyung Lee,
Michael R. Fitzsimmons
Abstract:
In the bulk, LaCoO3 (LCO) is a paramagnet, yet in tensile strained thin films at low temperature ferromagnetism (FM) is observed, and its origin remains unresolved. Polarized neutron reflectometry (PNR) is a powerful tool to determine the depth profiles of the structure and magnetization simultaneously and thus the evolution of the interfacial FM with strain can be accurately revealed. Here we qua…
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In the bulk, LaCoO3 (LCO) is a paramagnet, yet in tensile strained thin films at low temperature ferromagnetism (FM) is observed, and its origin remains unresolved. Polarized neutron reflectometry (PNR) is a powerful tool to determine the depth profiles of the structure and magnetization simultaneously and thus the evolution of the interfacial FM with strain can be accurately revealed. Here we quantitatively measured the distribution of atomic density and magnetization in LCO films by PNR and found that the LCO layers near the heterointerfaces exhibit a reduced magnetization but an enhanced atomic density, whereas the interior shows the opposite trend. We attribute the nonuniformity to the symmetry mismatch at the interface, which induces a structural distortion related to the ferroelasticity of LCO. This assertion is tested by systematic application of hydrostatic pressure during the PNR experiments. These results provide unique insights into mechanisms driving FM in strained LCO films while offering a tantalizing observation that tunable deformation of the CoO6 octahedra in combination with the ferroelastic order parameter.
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Submitted 8 March, 2019;
originally announced March 2019.
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Nanoscale ferroelastic twins formed in strained LaCoO3 films
Authors:
Er-Jia Guo,
Ryan Desautels,
David Keavney,
Manue A. Roldan,
Brian J. Kirby,
Dongkyu Lee,
Zhaoliang Liao,
Timothy Charlton,
Andreas Herklotz,
T. Zac Ward,
Michael R. Fitzsimmons,
Ho Nyung Lee
Abstract:
The coexistence and coupling of ferroelasticity and magnetic ordering in a single material offers a great opportunity to realize novel devices with multiple tuning knobs. Complex oxides are a particularly promising class of materials to find multiferroic interactions as they often possess rich phase diagrams and the interactions are very sensitive to external perturbations. Still, there are very f…
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The coexistence and coupling of ferroelasticity and magnetic ordering in a single material offers a great opportunity to realize novel devices with multiple tuning knobs. Complex oxides are a particularly promising class of materials to find multiferroic interactions as they often possess rich phase diagrams and the interactions are very sensitive to external perturbations. Still, there are very few examples of these systems. Here we report the observation of twinning domains in ferroelastic LaCoO3 epitaxial thin films and their geometric control of structural symmetry that are intimately linked to the material electronic and magnetic states. A unidirectional structural modulation is achieved by selective choice of substrates possessing two-fold rotational symmetry. This modulation perturbs the crystal field splitting energy, leading to unexpected in plane anisotropy of orbital configuration and magnetization. These findings demonstrate the utilization of structural modulation to control multiferroic interactions and may enable a great potential for stimulation of exotic phenomena through artificial domain engineering.
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Submitted 31 January, 2019;
originally announced February 2019.
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Single Crystal High Entropy Perovskite Oxide Epitaxial Films
Authors:
Yogesh Sharma,
Brianna L. Musico,
Xiang Gao,
Chengyun Hua,
Andrew F. May,
Andreas Herklotz,
Ankur Rastogi,
David Mandrus,
Jiaqiang Yan,
Ho Nyung Lee,
Matthew F. Chisholm,
Veerle Keppens,
T. Zac Ward
Abstract:
The first examples of single crystal epitaxial thin films of a high entropy perovskite oxide are synthesized. Pulsed laser deposition is used to grow the configurationally disordered ABO3 perovskite, Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)O3, epitaxially on SrTiO3 and MgO substrates. X-ray diffraction and scanning transmission electron microscopy demonstrate that the films are single phase with excellent cr…
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The first examples of single crystal epitaxial thin films of a high entropy perovskite oxide are synthesized. Pulsed laser deposition is used to grow the configurationally disordered ABO3 perovskite, Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)O3, epitaxially on SrTiO3 and MgO substrates. X-ray diffraction and scanning transmission electron microscopy demonstrate that the films are single phase with excellent crystallinity and atomically abrupt interfaces to the underlying substrates. Atomically-resolved electron energy loss spectroscopy mapping shows a uniform and random distribution of all B-site cations. The ability to stabilize perovskites with this level of configurational disorder offers new possibilities for designing materials from a much broader combinatorial cation pallet while providing a fresh avenue for fundamental studies in strongly correlated quantum materials where local disorder can play a critical role in determining macroscopic properties.
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Submitted 28 June, 2018;
originally announced June 2018.
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Full Electroresistance Modulation in a Mixed-Phase Metallic Alloy
Authors:
Z. Q. Liu,
L. Li,
Z. Gai,
J. D. Clarkson,
S. L. Hsu,
A. T. Wong,
L. S. Fan,
M. -W. Lin,
C. M. Rouleau,
T. Z. Ward,
H. N. Lee,
A. S. Sefat,
H. M. Christen,
R. Ramesh
Abstract:
We report a giant, ~22%, electroresistance modulation for a metallic alloy above room temperature. It is achieved by a small electric field of 2 kV/cm via piezoelectric strain-mediated magnetoelectric coupling and the resulting magnetic phase transition in epitaxial FeRh/BaTiO3 heterostructures. This work presents detailed experimental evidence for an isothermal magnetic phase transition driven by…
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We report a giant, ~22%, electroresistance modulation for a metallic alloy above room temperature. It is achieved by a small electric field of 2 kV/cm via piezoelectric strain-mediated magnetoelectric coupling and the resulting magnetic phase transition in epitaxial FeRh/BaTiO3 heterostructures. This work presents detailed experimental evidence for an isothermal magnetic phase transition driven by tetragonality modulation in FeRh thin films, which is in contrast to the large volume expansion in the conventional temperature-driven magnetic phase transition in FeRh. Moreover, all the experimental results in this work illustrate FeRh as a mixed-phase model system well similar to phase-separated colossal magnetoresistance systems with phase instability therein.
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Submitted 14 February, 2017;
originally announced February 2017.
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Nanoscale self-templating for oxide epitaxy with large symmetry mismatch
Authors:
Xiang Gao,
Shinbuhm Lee,
John Nichols,
Tricia L. Meyer,
Thomas Z. Ward,
Matthew F. Chisholm,
Ho Nyung Lee
Abstract:
Direct observations using scanning transmission electron microscopy unveil an intriguing interfacial bi-layer that enables epitaxial growth of a strain-free, monoclinic, bronze-phase VO2(B) thin film on a perovskite SrTiO3 (STO) substrate. We observe an ultrathin (2-3 unit cells) interlayer best described as highly strained VO2(B) nanodomains combined with an extra (Ti,V)O2 layer on the TiO2 termi…
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Direct observations using scanning transmission electron microscopy unveil an intriguing interfacial bi-layer that enables epitaxial growth of a strain-free, monoclinic, bronze-phase VO2(B) thin film on a perovskite SrTiO3 (STO) substrate. We observe an ultrathin (2-3 unit cells) interlayer best described as highly strained VO2(B) nanodomains combined with an extra (Ti,V)O2 layer on the TiO2 terminated STO (001) surface. By forming a fully coherent interface with the STO substrate and a semi-coherent interface with the strain-free epitaxial VO2(B) film above, the interfacial bi-layer enables the epitaxial connection of the two materials despite their large symmetry and lattice mismatch.
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Submitted 26 September, 2016;
originally announced September 2016.
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Enhancing interfacial magnetization with a ferroelectric
Authors:
Tricia L. Meyer,
1 Andreas Herklotz,
Valeria Lauter,
John W. Freeland,
John Nichols,
Er-Jia Guo,
Shinbuhm Lee,
T. Zac Ward,
Nina Balke,
Sergei V. Kalinin,
Michael R. Fitzsimmons,
Ho Nyung Lee
Abstract:
Ferroelectric control of interfacial magnetism has attracted much attention. However, the coupling of these two functionalities has not been understood well at the atomic scale. The lack of scientific progress is mainly due to the limited characterization methods by which the interface's magnetic properties can be probed at an atomic level. Here, we use polarized neutron reflectometry (PNR) to pro…
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Ferroelectric control of interfacial magnetism has attracted much attention. However, the coupling of these two functionalities has not been understood well at the atomic scale. The lack of scientific progress is mainly due to the limited characterization methods by which the interface's magnetic properties can be probed at an atomic level. Here, we use polarized neutron reflectometry (PNR) to probe the evolution of the magnetic moment at interfaces in ferroelectric/strongly correlated oxide [PbZr0.2Ti0.8O3/La0.8Sr0.2MnO3 (PZT/LSMO)] heterostructures. We find that there is always suppressed magnetization at the surface and interface of LSMO and such magnetic deterioration can be strongly improved by interfacing with a strongly polar PZT film. The magnetoelectric coupling of magnetism and ferroelectric polarization occurs within a couple of nanometers of the interface as demonstrated by the enhanced interfacial magnetization beyond the bulk value by 5% depending on the polarization of PZT. The latter value is 70% higher than the surface magnetization of a LSMO film without interfacing with a ferroelectric layer. These compelling results not only probe the presence of nanoscale magnetic suppression and its control by ferroelectrics, but also emphasize the importance of utilizing probing techniques that can distinguish between bulk and interfacial phenomena.
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Submitted 13 September, 2016;
originally announced September 2016.
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Emerging magnetism and anomalous Hall effect in iridate-manganite heterostructures
Authors:
John Nichols,
Xiang Gao,
Shinbuhm Lee,
Tricia L. Meyer,
John W. Freeland,
Valeria Lauter,
Di Yi,
Jian Liu,
Daniel Haskel,
Jonathan R. Petrie,
Er-Jia Guo,
Andreas Herklotz,
Dongkyu Lee,
Thomas Z. Ward,
Gyula Eres,
Michael R. Fitzsimmons,
Ho Nyung Lee
Abstract:
Strong Coulomb repulsion and spin-orbit coupling are known to give rise to exotic physical phenomena in transition metal oxides. Initial attempts to investigate systems where both of these fundamental interactions are comparably strong, such as 3d and 5d complex oxide superlattices, have revealed properties that only slightly differ from the bulk ones of the constituent materials. Here, we observe…
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Strong Coulomb repulsion and spin-orbit coupling are known to give rise to exotic physical phenomena in transition metal oxides. Initial attempts to investigate systems where both of these fundamental interactions are comparably strong, such as 3d and 5d complex oxide superlattices, have revealed properties that only slightly differ from the bulk ones of the constituent materials. Here, we observe that the interfacial coupling between the 3d antiferromagnetic insulator SrMnO3 and the 5d paramagnetic metal SrIrO3 is enormously strong, yielding an anomalous Hall response as the result of charge transfer driven interfacial ferromagnetism. These findings show that low dimensional spin-orbit entangled 3d-5d interfaces provide an avenue to uncover technologically relevant physical phenomena unattainable in bulk materials.
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Submitted 7 September, 2016;
originally announced September 2016.
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Dynamic defect correlations dominate activated electronic transport in SrTiO3
Authors:
Paul C. Snijders,
Cengiz Şen,
Michael P. McConnell,
Ying-Zhong Ma,
Andrew F. May,
Andreas Herklotz,
Anthony T. Wong,
T. Zac Ward
Abstract:
Strontium titanate (SrTiO3, STO) is a critically important material for the study of emergent electronic phases in complex oxides, as well as for the development of applications based on their heterostructures. Despite the large body of knowledge on STO, there are still many uncertainties regarding the role of defects in the properties of STO, including their influence on ferroelectricity in bulk…
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Strontium titanate (SrTiO3, STO) is a critically important material for the study of emergent electronic phases in complex oxides, as well as for the development of applications based on their heterostructures. Despite the large body of knowledge on STO, there are still many uncertainties regarding the role of defects in the properties of STO, including their influence on ferroelectricity in bulk STO and ferromagnetism in STO-based heterostructures. We present a detailed analysis of the decay of persistent photoconductivity in STO single crystals with defect concentrations that are relatively low but significantly affect their electronic properties. The results show that photo-activated electron transport cannot be described by a superposition of the properties due to independent point defects as current models suggest but is, instead, governed by defect complexes that interact through dynamic correlations. These results emphasize the importance of defect correlations for activated electronic transport properties of semiconducting and insulating perovskite oxides.
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Submitted 30 June, 2016;
originally announced June 2016.
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Strain Doping: Reversible Single-Axis Control of a Complex Oxide Lattice via Helium Implantation
Authors:
Hangwen Guo,
Shuai Dong,
Philip D. Rack,
John D. Budai,
Christianne Beekman,
Zheng Gai,
Wolter Siemons,
C. M. Gonzalez,
R. Timilsina,
Anthony T. Wong,
Andreas Herklotz,
Paul C. Snijders,
Elbio Dagotto,
Thomas Z. Ward
Abstract:
We report on the use of helium ion implantation to independently control the out-of-plane lattice constant in epitaxial La0.7Sr0.3MnO3 thin films without changing the in-plane lattice constants. The process is reversible by a vacuum anneal. Resistance and magnetization measurements show that even a small increase in the out-of-plane lattice constant of less than 1% can shift the metal-insulator tr…
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We report on the use of helium ion implantation to independently control the out-of-plane lattice constant in epitaxial La0.7Sr0.3MnO3 thin films without changing the in-plane lattice constants. The process is reversible by a vacuum anneal. Resistance and magnetization measurements show that even a small increase in the out-of-plane lattice constant of less than 1% can shift the metal-insulator transition and Curie temperatures by more than 100 °C. Unlike conventional epitaxy-based strain tuning methods which are constrained not only by the Poisson effect but by the limited set of available substrates, the present study shows that strain can be independently and continuously controlled along a single axis. This permits novel control over orbital populations through Jahn-Teller effects, as shown by Monte Carlo simulations on a double-exchange model. The ability to reversibly control a single lattice parameter substantially broadens the phase space for experimental exploration of predictive models and leads to new possibilities for control over materials' functional properties.
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Submitted 29 June, 2015;
originally announced June 2015.
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The influence of electron-doping on the ground state of (Sr{1-x}La{x})2IrO4
Authors:
Xiang Chen,
Tom Hogan,
D. Walkup,
Wenwen Zhou,
M. Pokharel,
Mengliang Yao,
Wei Tian,
Thomas Z. Ward,
Y. Zhao,
D. Parshall,
C. Opeil,
J. W. Lynn,
Vidya Madhavan,
Stephen D. Wilson
Abstract:
The evolution of the electronic properties of electron-doped (Sr{1-x}La{x})2IrO4 is experimentally explored as the doping limit of La is approached. As electrons are introduced, the electronic ground state transitions from a spin-orbit Mott phase into an electronically phase separated state, where long-range magnetic order vanishes beyond x = 0.02 and charge transport remains percolative up to the…
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The evolution of the electronic properties of electron-doped (Sr{1-x}La{x})2IrO4 is experimentally explored as the doping limit of La is approached. As electrons are introduced, the electronic ground state transitions from a spin-orbit Mott phase into an electronically phase separated state, where long-range magnetic order vanishes beyond x = 0.02 and charge transport remains percolative up to the limit of La substitution (x~0.06). In particular, the electronic ground state remains inhomogeneous even beyond the collapse of the parent state's long-range antiferromagnetic order, while persistent short-range magnetism survives up to the highest La-substitution levels. Furthermore, as electrons are doped into Sr2IrO4, we observe the appearance of a low temperature magnetic glass-like state intermediate to the complete suppression of antiferromagnetic order. Universalities and differences in the electron-doped phase diagrams of single layer and bilayer Ruddlesden-Popper strontium iridates are discussed.
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Submitted 5 August, 2015; v1 submitted 24 June, 2015;
originally announced June 2015.
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First-order melting of a weak spin-orbit Mott insulator into a correlated metal
Authors:
Tom Hogan,
Z. Yamani,
D. Walkup,
Xiang Chen,
Rebecca Dally,
Thomas Z. Ward,
John Hill,
Z. Islam,
Vidya Madhavan,
Stephen D. Wilson
Abstract:
The electronic phase diagram of the weak spin-orbit Mott insulator (Sr(1-x)Lax)3Ir2O7 is determined via an exhaustive experimental study. Upon doping electrons via La substitution, an immediate collapse in resistivity occurs along with a narrow regime of nanoscale phase separation comprised of antiferromagnetic, insulating regions and paramagnetic, metallic puddles persisting until x~0.04. Continu…
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The electronic phase diagram of the weak spin-orbit Mott insulator (Sr(1-x)Lax)3Ir2O7 is determined via an exhaustive experimental study. Upon doping electrons via La substitution, an immediate collapse in resistivity occurs along with a narrow regime of nanoscale phase separation comprised of antiferromagnetic, insulating regions and paramagnetic, metallic puddles persisting until x~0.04. Continued electron doping results in an abrupt, first-order phase boundary where the Neel state is suppressed and a homogenous, correlated, metallic state appears with an enhanced spin susceptibility and local moments. As the metallic state is stabilized, a weak structural distortion develops and suggests a competing instability with the parent spin-orbit Mott state.
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Submitted 29 May, 2015;
originally announced June 2015.
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Resolving transitions in the mesoscale domain configuration in VO$_2$ using laser speckle pattern analysis
Authors:
Katyayani Seal,
Amos Sharoni,
Jamie M. Messman,
Bradley S. Lokitz,
Robert W. Shaw,
Ivan K. Schuller,
Paul C. Snijders,
Thomas Z. Ward
Abstract:
The configuration and evolution of coexisting mesoscopic domains with contrasting material properties are critical in creating novel functionality through emergent physical properties. However, current approaches that map the domain structure involve either spatially resolved but protracted scanning probe experiments without real time information on the domain evolution, or time resolved spectrosc…
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The configuration and evolution of coexisting mesoscopic domains with contrasting material properties are critical in creating novel functionality through emergent physical properties. However, current approaches that map the domain structure involve either spatially resolved but protracted scanning probe experiments without real time information on the domain evolution, or time resolved spectroscopic experiments lacking domain-scale spatial resolution. We demonstrate an elegant experimental technique that bridges these local and global methods, giving access to mesoscale information on domain formation and evolution at time scales orders of magnitude faster than current spatially resolved approaches. Our straightforward analysis of laser speckle patterns across the first order phase transition of VO$_2$ can be generalized to other systems with large scale phase separation and has potential as a powerful method with both spatial and temporal resolution to study phase separation in complex materials.
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Submitted 9 September, 2014;
originally announced September 2014.
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Strain driven anisotropic magnetoresistance in antiferromagnetic La$_{0.4}$Sr$_{0.6}$MnO$_{3}$
Authors:
A. T. Wong,
C. Beekman,
H. Guo,
W. Siemons,
Z. Gai,
E. Arenholz,
Y. Takamura,
T. Z. Ward
Abstract:
We investigate the effects of strain on antiferromagntic (AFM) single crystal thin films of La$_{1-x}$Sr$_{x}$MnO$_{3}$ (x = 0.6). Nominally unstrained samples have strong magnetoresistance with anisotropic magnetoresistances (AMR) of up to 8%. Compressive strain suppresses magnetoresistance but generates AMR values of up to 63%. Tensile strain presents the only case of a metal-insulator transitio…
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We investigate the effects of strain on antiferromagntic (AFM) single crystal thin films of La$_{1-x}$Sr$_{x}$MnO$_{3}$ (x = 0.6). Nominally unstrained samples have strong magnetoresistance with anisotropic magnetoresistances (AMR) of up to 8%. Compressive strain suppresses magnetoresistance but generates AMR values of up to 63%. Tensile strain presents the only case of a metal-insulator transition and demonstrates a previously unreported AMR behavior. In all three cases, we find evidence of magnetic ordering and no indication of a global ferromagnetic phase transition. These behaviors are attributed to epitaxy induced changes in orbital occupation driving different magnetic ordering types. Our findings suggest that different AFM ordering types have a profound impact on the AMR magnitude and character.
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Submitted 29 August, 2014;
originally announced August 2014.
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Tuning the metal-insulator transition in manganite films through surface exchange coupling with magnetic nanodots
Authors:
T. Z. Ward,
Z. Gai,
X. Y. Xu,
H. W. Guo,
L. F. Yin,
J. Shen
Abstract:
In strongly correlated electronic systems, such as manganites, the global transport behavior depends sensitively on the spin ordering, whose alteration often requires a large external magnetic field. Here we show that the spin ordering in manganites can be easily controlled by exchange field across the interface between a ferromagnet and a manganite. By depositing isolated ferromagnetic nanodots o…
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In strongly correlated electronic systems, such as manganites, the global transport behavior depends sensitively on the spin ordering, whose alteration often requires a large external magnetic field. Here we show that the spin ordering in manganites can be easily controlled by exchange field across the interface between a ferromagnet and a manganite. By depositing isolated ferromagnetic nanodots on a manganite thin film, we find that it is possible to overcome dimensionality and strain effects to raise the metal-insulator transition (MIT) temperature by over 200 K and increase the magnetoresistance by 5000%. The MIT temperature can also be tuned by controlling the density of the magnetic nanodots which indicates that the formation process of electronic phase separation can be controlled by the presence of magnetic nanodots.
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Submitted 30 June, 2014;
originally announced June 2014.
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Persistent metal-insulator transition at the surface of an oxygen-deficient, epitaxial manganite film
Authors:
Paul C. Snijders,
Min Gao,
Hangwen Guo,
Guixin Cao,
Wolter Siemons,
Hongjun Gao,
Thomas Z. Ward,
Jian Shen,
Zheng Gai
Abstract:
The oxygen stoichiometry has a large influence on the physical and chemical properties of complex oxides. Most of the functionality in e.g. catalysis and electrochemistry depends in particular on control of the oxygen stoichiometry. In order to understand the fundamental properties of intrinsic surfaces of oxygen-deficient complex oxides, we report on in situ temperature dependent scanning tunnell…
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The oxygen stoichiometry has a large influence on the physical and chemical properties of complex oxides. Most of the functionality in e.g. catalysis and electrochemistry depends in particular on control of the oxygen stoichiometry. In order to understand the fundamental properties of intrinsic surfaces of oxygen-deficient complex oxides, we report on in situ temperature dependent scanning tunnelling spectroscopy experiments on pristine oxygen deficient, epitaxial manganite films. Although these films are insulating in subsequent ex situ in-plane electronic transport experiments at all temperatures, in situ scanning tunnelling spectroscopic data reveal that the surface of these films exhibits a metal-insulator transition (MIT) at 120 K, coincident with the onset of ferromagnetic ordering of small clusters in the bulk of the oxygen-deficient film. The surprising proximity of the surface MIT transition temperature of nonstoichiometric films with that of the fully oxygenated bulk suggests that the electronic properties in the surface region are not significantly affected by oxygen deficiency in the bulk. This carries important implications for the understanding and functional design of complex oxides and their interfaces with specific electronic properties for catalysis, oxide electronics and electrochemistry.
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Submitted 28 January, 2014;
originally announced January 2014.
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Structural and electronic origin of the magnetic structures in hexagonal LuFeO$_3$
Authors:
Hongwei Wang,
Igor V. Solovyev,
Wenbin Wang,
Xiao Wang,
Phillip Ryan,
David J. Keavney,
Jong-Woo Kim,
Thomas Z. Ward,
Leyi Zhu,
X. M. Cheng,
Jian Shen,
Lixin He,
Xiaoshan Xu,
Xifan Wu
Abstract:
Using combined theoretical and experimental approaches, we studied the structural and electronic origin of the magnetic structure in hexagonal LuFeO$_3$. Besides showing the strong exchange coupling that is consistent with the high magnetic ordering temperature, the previously observed spin reorientation transition is explained by the theoretically calculated magnetic phase diagram. The structural…
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Using combined theoretical and experimental approaches, we studied the structural and electronic origin of the magnetic structure in hexagonal LuFeO$_3$. Besides showing the strong exchange coupling that is consistent with the high magnetic ordering temperature, the previously observed spin reorientation transition is explained by the theoretically calculated magnetic phase diagram. The structural origin of this spin reorientation that is responsible for the appearance of spontaneous magnetization, is identified by theory and verified by x-ray diffraction and absorption experiments.
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Submitted 26 July, 2014; v1 submitted 25 December, 2013;
originally announced December 2013.
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Unit cell orientation of tetragonal-like BiFeO$_3$ thin films grown on highly miscut LaAlO$_3$ substrates
Authors:
C. Beekman,
W. Siemons,
T. Z. Ward,
J. D. Budai,
J. Z. Tischler,
R. Xu,
W. Liu,
N. Balke,
J. H. Nam,
H. M. Christen
Abstract:
Synchrotron and lab-scale x-ray diffraction shows that tetragonal-like T'-BiFeO3 films on miscut LaAlO3 substrates (miscut < 5 deg) exhibit (00l)-planes tilted away from those of the substrate as predicted by the "Nagai model" (except for miscut <0.2 deg). Tilts as large as 1 deg are achieved even in 100 nm thick films, strikingly larger than those observed in other perovskites. We attribute this…
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Synchrotron and lab-scale x-ray diffraction shows that tetragonal-like T'-BiFeO3 films on miscut LaAlO3 substrates (miscut < 5 deg) exhibit (00l)-planes tilted away from those of the substrate as predicted by the "Nagai model" (except for miscut <0.2 deg). Tilts as large as 1 deg are achieved even in 100 nm thick films, strikingly larger than those observed in other perovskites. We attribute this to the large c/a ratio and the high crystalline coherency of the T'-BiFeO3/LaAlO3 interface. This coherency is possible through an observed "diagonal-on-diagonal" alignment. Interestingly, the substrate miscut does not influence the relative population of monoclinic domains.
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Submitted 13 December, 2013;
originally announced December 2013.
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Electrophoretic-like gating used to control metal-insulator transitions in electronically phase separated manganite wires
Authors:
Hangwen Guo,
Joo H. Noh,
Shuai Dong,
Philip D. Rack,
Zheng Gai,
Xiaoshan Xu,
Elbio Dagotto,
Jian Shen,
T. Zac Ward
Abstract:
Electronically phase separated manganite wires are found to exhibit controllable metal-insulator transitions under local electric fields. The switching characteristics are shown to be fully reversible, polarity independent, and highly resistant to thermal breakdown caused by repeated cycling. It is further demonstrated that multiple discrete resistive states can be accessed in a single wire. The r…
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Electronically phase separated manganite wires are found to exhibit controllable metal-insulator transitions under local electric fields. The switching characteristics are shown to be fully reversible, polarity independent, and highly resistant to thermal breakdown caused by repeated cycling. It is further demonstrated that multiple discrete resistive states can be accessed in a single wire. The results conform to a phenomenological model in which the inherent nanoscale insulating and metallic domains are rearranged through electrophoretic-like processes to open and close percolation channels.
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Submitted 28 August, 2013;
originally announced August 2013.
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Active control of magnetoresistance of organic spin valves using ferroelectricity
Authors:
Dali Sun,
Mei Fang,
Xiaoshan Xu,
Lu Jiang,
Hangwen Guo,
Yanmei Wang,
Wenting Yang,
Lifeng Yin,
Paul C. Snijders,
T. Z. Ward,
Zheng Gai,
X. -G. Zhang,
Ho Nyung Lee,
Jian Shen
Abstract:
Organic spintronic devices have been appealing because of the long spin life time of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance.1 Here…
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Organic spintronic devices have been appealing because of the long spin life time of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance.1 Here we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer. We show that the resistance can be controlled by not only the spin alignment of the two ferromagnetic electrodes, but also by the electric polarization of the interfacial ferroelectric layer: the MR of the spin valve depends strongly on the history of the bias voltage which is correlated with the polarization of the ferroelectric layer; the MR even changes sign when the electric polarization of the ferroelectric layer is reversed. This new tunability can be understood in terms of the change of relative energy level alignment between ferromagnetic electrode and the organic spacer caused by the electric dipole moment of the ferroelectric layer. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multi-state organic spin valves and shed light on the mechanism of the spin transport in organic spin valves.
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Submitted 10 February, 2014; v1 submitted 8 April, 2013;
originally announced April 2013.
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Dynamics of a first order electronic phase transition in manganites
Authors:
T. Z. Ward,
Z. Gai,
H. W. Guo,
L. F. Yin,
J. Shen
Abstract:
By reducing an electronically phase separated manganite (La[1-y]Pr[y])[x]Ca[1-x]MnO3 single crystal thin film to dimensions on the order of the inherent phase domains, it is possible to isolate and monitor the behavior of single domains at a first order transition. At this critical point, it is possible to study the coexistence, formation and annihilation processes of discrete electronic phase dom…
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By reducing an electronically phase separated manganite (La[1-y]Pr[y])[x]Ca[1-x]MnO3 single crystal thin film to dimensions on the order of the inherent phase domains, it is possible to isolate and monitor the behavior of single domains at a first order transition. At this critical point, it is possible to study the coexistence, formation and annihilation processes of discrete electronic phase domains. With this technique, we make several new observations on the mechanisms leading to the metal insulator transition in manganites. We observe that domain formation is emergent and random, the transition process from the metallic phase to the insulating phase takes longer than the reverse process, electric field effects are more influential in driving a phase transition than current induced electron heating, and single domain transition dynamics can be tuned through careful application of temperature and electric field.
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Submitted 24 October, 2012;
originally announced October 2012.
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Growth diagram of La0.7Sr0.3MnO3 thin films using pulsed laser deposition
Authors:
Hangwen Guo,
Dali Sun,
Wenbin Wang,
Zheng Gai,
Ivan Kravchenko,
Jian Shao,
Lu Jiang,
Thomas Z. Ward,
Paul C. Snijders,
Lifeng Yin,
Jian Shen,
Xiaoshan Xu
Abstract:
An experimental study was conducted on controlling the growth mode of La0.7Sr0.3MnO3 thin films on SrTiO3 substrates using pulsed laser deposition (PLD) by tuning growth temperature, pressure and laser fluence. Different thin film morphology, crystallinity and stoichiometry have been observed depending on growth parameters. To understand the microscopic origin, the adatom nucleation, step advance…
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An experimental study was conducted on controlling the growth mode of La0.7Sr0.3MnO3 thin films on SrTiO3 substrates using pulsed laser deposition (PLD) by tuning growth temperature, pressure and laser fluence. Different thin film morphology, crystallinity and stoichiometry have been observed depending on growth parameters. To understand the microscopic origin, the adatom nucleation, step advance processes and their relationship to film growth were theoretically analyzed and a growth diagram was constructed. Three boundaries between highly and poorly crystallized growth, 2D and 3D growth, stoichiometric and non-stoichiometric growth were identified in the growth diagram. A good fit of our experimental observation with the growth diagram was found. This case study demonstrates that a more comprehensive understanding of the growth mode in PLD is possible.
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Submitted 17 June, 2013; v1 submitted 22 October, 2012;
originally announced October 2012.
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Room-temperature multiferroic hexagonal LuFeO$_3$ films
Authors:
Wenbin Wang,
Jun Zhao,
Wenbo Wang,
Zheng Gai,
Nina Balke,
Miaofang Chi,
Ho Nyung Lee,
Wei Tian,
Leyi Zhu,
Xuemei Cheng,
David J. Keavney,
Jieyu Yi,
Thomas Z. Ward,
Paul C. Snijders,
Hans M. Christen,
Weida Wu,
Jian Shen,
Xiaoshan Xu
Abstract:
The crystal and magnetic structures of single-crystalline hexagonal LuFeO$_3$ films have been studied using x-ray, electron and neutron diffraction methods. The polar structure of these films are found to persist up to 1050 K; and the switchability of the polar behavior is observed at room temperature, indicating ferroelectricity. An antiferromagnetic order was shown to occur below 440 K, followed…
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The crystal and magnetic structures of single-crystalline hexagonal LuFeO$_3$ films have been studied using x-ray, electron and neutron diffraction methods. The polar structure of these films are found to persist up to 1050 K; and the switchability of the polar behavior is observed at room temperature, indicating ferroelectricity. An antiferromagnetic order was shown to occur below 440 K, followed by a spin reorientation resulting in a weak ferromagnetic order below 130 K. This observation of coexisting multiple ferroic orders demonstrates that hexagonal LuFeO$_3$ films are room-temperature multiferroics.
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Submitted 29 May, 2013; v1 submitted 14 September, 2012;
originally announced September 2012.
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Growth diagram and magnetic properties of hexagonal LuFe$_2$O$_4$ thin films
Authors:
Wenbin Wang,
Zheng Gai,
Miaofang Chi,
Jason D. Fowlkes,
Jieyu Yi,
Leyi Zhu,
Xuemei Cheng,
David J. Keavney,
Paul C. Snijders,
Thomas Z. Ward,
Jian Shen,
Xiaoshan Xu
Abstract:
A growth diagram of Lu-Fe-O compounds on MgO (111) substrates using pulsed laser deposition is constructed based on extensive growth experiments.
The LuFe$_2$O$_4$ phase can only be grown in a small range of temperature and O$_2$ pressure conditions.
An understanding of the growth mechanism of Lu-Fe-O compound films is offered in terms of the thermochemistry at the surface.
Superparamagnetis…
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A growth diagram of Lu-Fe-O compounds on MgO (111) substrates using pulsed laser deposition is constructed based on extensive growth experiments.
The LuFe$_2$O$_4$ phase can only be grown in a small range of temperature and O$_2$ pressure conditions.
An understanding of the growth mechanism of Lu-Fe-O compound films is offered in terms of the thermochemistry at the surface.
Superparamagnetism is observed in LuFe$_2$O$_4$ film and is explained in terms of the effect of the impurity h-LuFeO$_3$ phase and structural defects .
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Submitted 5 March, 2012;
originally announced March 2012.