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Universal scaling of adiabatic tunneling out of a shallow confinement potential
Authors:
Austris Akmentinsh,
David Reifert,
Thomas Weimann,
Klaus Pierz,
Vyacheslavs Kashcheyevs,
Niels Ubbelohde
Abstract:
The ability to tune quantum tunneling is key for achieving selectivity in manipulation of individual particles in quantum technology applications. In this work we count electron escape events out of a time-dependent confinement potential, realized as a dynamic quantum dot in a GaAs/AlGaAs heterostructure. A universal scaling relation of the escape probability as a function of potential barrier ris…
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The ability to tune quantum tunneling is key for achieving selectivity in manipulation of individual particles in quantum technology applications. In this work we count electron escape events out of a time-dependent confinement potential, realized as a dynamic quantum dot in a GaAs/AlGaAs heterostructure. A universal scaling relation of the escape probability as a function of potential barrier rise time and depth is established and developed as a method to probe tunneling rates over many orders of magnitude reaching the limit of shallow anharmonic confinement. Crossover to thermally activated transport is used to estimate the single time-energy scale of the universal model. In application to metrological single electron sources, in-situ calibrated control signals greatly extend the accessible dynamical range for probing the quantization mechanism. Validation of the cubic potential approximation sets a foundation for microscopic modeling of quantum tunneling devices in the shallow confinement regime.
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Submitted 14 August, 2024; v1 submitted 26 January, 2023;
originally announced January 2023.
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High-Q magnetic levitation and control of superconducting microspheres at millikelvin temperatures
Authors:
Joachim Hofer,
Rudolf Gross,
Gerard Higgins,
Hans Huebl,
Oliver F. Kieler,
Reinhold Kleiner,
Dieter Koelle,
Philip Schmidt,
Joshua A. Slater,
Michael Trupke,
Kevin Uhl,
Thomas Weimann,
Witlef Wieczorek,
Markus Aspelmeyer
Abstract:
We report the levitation of a superconducting lead-tin sphere with 100 micrometer diameter (corresponding to a mass of 5.6 micrograms) in a static magnetic trap formed by two coils in an anti-Helmholtz configuration, with adjustable resonance frequencies up to 240 hertz. The center-of-mass motion of the sphere is monitored magnetically using a dc superconducting quantum interference device as well…
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We report the levitation of a superconducting lead-tin sphere with 100 micrometer diameter (corresponding to a mass of 5.6 micrograms) in a static magnetic trap formed by two coils in an anti-Helmholtz configuration, with adjustable resonance frequencies up to 240 hertz. The center-of-mass motion of the sphere is monitored magnetically using a dc superconducting quantum interference device as well as optically and exhibits quality factors of up to 2.6e7. We also demonstrate 3D magnetic feedback control of the sphere's motion. The setup is housed in a dilution refrigerator operating at 15 millikelvin. By implementing a cryogenic vibration isolation system we can attenuate environmental vibrations at 200 hertz by approximately seven orders of magnitude. The combination of low temperature, large mass and high quality factor as well as adjustable resonance frequencies provides a promising platform for testing quantum physics in previously unexplored regimes with high mass and long coherence times.
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Submitted 1 August, 2023; v1 submitted 11 November, 2022;
originally announced November 2022.
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Two electrons interacting at a mesoscopic beam splitter
Authors:
Niels Ubbelohde,
Lars Freise,
Elina Pavlovska,
Peter G. Silvestrov,
Patrik Recher,
Martins Kokainis,
Girts Barinovs,
Frank Hohls,
Thomas Weimann,
Klaus Pierz,
Vyacheslavs Kashcheyevs
Abstract:
The non-linear response of a beam splitter to the coincident arrival of interacting particles enables numerous applications in quantum engineering and metrology yet poses considerable challenge to achieve focused interactions on the individual particle level. Here we probe the coincidence correlations at a mesoscopic constriction between individual ballistic electrons in a system with unscreened C…
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The non-linear response of a beam splitter to the coincident arrival of interacting particles enables numerous applications in quantum engineering and metrology yet poses considerable challenge to achieve focused interactions on the individual particle level. Here we probe the coincidence correlations at a mesoscopic constriction between individual ballistic electrons in a system with unscreened Coulomb interactions and introduce concepts to quantify the associated parametric non-linearity. The full counting statistics of joint detection allows us to explore the interaction-mediated energy exchange. We observe an increase from 50\% up to 70\% in coincidence counts between statistically indistinguishable on demand sources, and a correlation signature consistent with independent tomography of the electron emission. Analytical modeling and numerical simulations underpin consistency of the experimental results with Coulomb interactions between two electrons counterpropagating in a dispersive quadratic saddle, and demonstrate interactions sufficiently strong, $U/(\hbar ω) > 10$, to enable single-shot in-flight detection and quantum logic gates.
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Submitted 7 October, 2022;
originally announced October 2022.
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Grazing incidence-X-ray fluorescence for a dimensional and elemental characterization of well-ordered nanostructures
Authors:
Philipp Hönicke,
Anna Andrle,
Yves Kayser,
Konstantin V. Nikolaev,
Jürgen Probst,
Frank Scholze,
Victor Soltwisch,
Thomas Weimann,
Burkhard Beckhoff
Abstract:
The increasing importance of well-controlled ordered nanostructures on surfaces represents a challenge for existing metrology techniques. To develop such nanostructures and monitor complex processing constraints fabrication, both a dimensional reconstruction of nanostructures and a characterization (ideally a quantitative characterization) of their composition is required. In this work, we present…
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The increasing importance of well-controlled ordered nanostructures on surfaces represents a challenge for existing metrology techniques. To develop such nanostructures and monitor complex processing constraints fabrication, both a dimensional reconstruction of nanostructures and a characterization (ideally a quantitative characterization) of their composition is required. In this work, we present a soft X-ray fluorescence-based methodology that allows both of these requirements to be addressed at the same time. By applying the grazing-incidence X-ray fluorescence technique and thus utilizing the X-ray standing wave field effect, nanostructures can be investigated with a high sensitivity with respect to their dimensional and compositional characteristics. By varying the incident angles of the exciting radiation, element-sensitive fluorescence radiation is emitted from different regions inside the nanoobjects. By applying an adequate modeling scheme, these datasets can be used to determine the nanostructure characteristics. We demonstrate these capabilities by performing an element-sensitive reconstruction of a lamellar grating made of Si$_3$N$_4$, where GIXRF data for the O-K$α$ and N-K$α$ fluorescence emission allows a thin oxide layer to be reconstructed on the surface of the grating structure. In addition, we employ the technique also to three dimensional nanostructures and derive both dimensional and compositional parameters in a quantitative manner.
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Submitted 5 May, 2020;
originally announced May 2020.
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Traceably Calibrated Scanning Hall Probe Microscopy at Room Temperature
Authors:
Manuela Gerken,
Aurélie Solignac,
Davood Momeni Pakdehi,
Alessandra Manzin,
Thomas Weimann,
Klaus Pierz,
Sibylle Sievers,
Hans Werner Schumacher
Abstract:
Fabrication, characterization and comparison of gold and graphene micro- and nano-size Hall sensors for room temperature scanning magnetic field microscopy applications is presented. The Hall sensors with active areas from 5 $μ$m down to 50 nm were fabricated by electron-beam lithography. The calibration of the Hall sensors in an external magnetic field revealed a sensitivity of 3.2 mV/(AT) $\pm$…
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Fabrication, characterization and comparison of gold and graphene micro- and nano-size Hall sensors for room temperature scanning magnetic field microscopy applications is presented. The Hall sensors with active areas from 5 $μ$m down to 50 nm were fabricated by electron-beam lithography. The calibration of the Hall sensors in an external magnetic field revealed a sensitivity of 3.2 mV/(AT) $\pm$ 0.3 % for gold and 1615 V/(AT) $\pm$ 0.5 % for graphene at room temperature. The gold sensors were fabricated on silicon nitride cantilever chips suitable for integration into commercial scanning probe microscopes, allowing scanning Hall microscopy (SHM) under ambient conditions and controlled sensor-sample distance. The height dependent stray field distribution of a magnetic scale was characterized using a 5 $μ$m gold Hall sensor. The uncertainty of the entire Hall sensor based scanning and data acquisition process was analyzed allowing traceably calibrated SHM measurements. The measurement results show good agreement with numerical simulations within the uncertainty budget.
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Submitted 2 June, 2020; v1 submitted 28 October, 2019;
originally announced October 2019.
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Trapping and counting ballistic non-equilibrium electrons
Authors:
L. Freise,
T. Gerster,
D. Reifert,
T. Weimann,
K. Pierz,
F. Hohls,
N. Ubbelohde
Abstract:
We demonstrate the trapping of electrons propagating ballistically at far-above-equilibrium energies in GaAs/AlGaAs heterostructures in high magnetic field. We find low-loss transport along a gate-modified mesa edge in contrast to an effective decay of excess energy for the loop around a neighboring, mesa-confined node, enabling high-fidelity trapping. Measuring the full counting statistics via si…
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We demonstrate the trapping of electrons propagating ballistically at far-above-equilibrium energies in GaAs/AlGaAs heterostructures in high magnetic field. We find low-loss transport along a gate-modified mesa edge in contrast to an effective decay of excess energy for the loop around a neighboring, mesa-confined node, enabling high-fidelity trapping. Measuring the full counting statistics via single-charge detection yields the trapping (and escape) probabilities of electrons scattered (and excited) within the node. Energetic and arrival-time distributions of captured electron wave packets are characterized by modulating tunnel barrier transmission.
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Submitted 27 March, 2020; v1 submitted 28 February, 2019;
originally announced February 2019.
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Lateral heterostructures of two-dimensional materials by electron-beam induced stitching
Authors:
Andreas Winter,
Antony George,
Christof Neumann,
Zian Tang,
Michael J. Mohn,
Johannes Biskupek,
Nirul Masurkar,
Leela Mohana Reddy Arava,
Thomas Weimann,
Uwe Hübner,
Ute Kaiser,
Andrey Turchanin
Abstract:
We present a novel methodology to synthesize two-dimensional (2D) lateral heterostructures of graphene and MoS2 sheets with molecular carbon nanomembranes (CNMs), which is based on electron beam induced stitching. Monolayers of graphene and MoS2 were grown by chemical vapor deposition (CVD) on copper and SiO2 substrates, respectively, transferred onto gold/mica substrates and patterned by electron…
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We present a novel methodology to synthesize two-dimensional (2D) lateral heterostructures of graphene and MoS2 sheets with molecular carbon nanomembranes (CNMs), which is based on electron beam induced stitching. Monolayers of graphene and MoS2 were grown by chemical vapor deposition (CVD) on copper and SiO2 substrates, respectively, transferred onto gold/mica substrates and patterned by electron beam lithography or photolithography. Self-assembled monolayers (SAMs) of aromatic thiols were grown on the gold film in the areas where the 2D materials were not present. An irradiation with a low energy electron beam was employed to convert the SAMs into CNMs and simultaneously stitching the CNM edges to the edges of graphene and MoS2, therewith forming a heterogeneous but continuous film composed of two different materials. The formed lateral heterostructures possess a high mechanical stability, enabling their transfer from the gold substrate onto target substrates and even the preparation as freestanding sheets. We characterized the individual steps of this synthesis and the structure of the final heterostructures by complementary analytical techniques including optical microscopy, Raman spectroscopy, atomic force microscopy (AFM), helium ion microscopy (HIM), X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM) and find that they possess nearly atomically sharp boundaries.
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Submitted 1 May, 2018;
originally announced May 2018.
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Magnetization reversal of an individual exchange biased permalloy nanotube
Authors:
A. Buchter,
R. Wölbing,
M. Wyss,
O. F. Kieler,
T. Weimann,
J. Kohlmann,
A. B. Zorin,
D. Rüffer,
F. Matteini,
G. Tütüncüoglu,
F. Heimbach,
A. Kleibert,
A. Fontcuberta i Morral,
D. Grundler,
R. Kleiner,
D. Koelle,
M. Poggio
Abstract:
We investigate the magnetization reversal mechanism in an individual permalloy (Py) nanotube (NT) using a hybrid magnetometer consisting of a nanometer-scale SQUID (nanoSQUID) and a cantilever torque sensor. The Py NT is affixed to the tip of a Si cantilever and positioned in order to optimally couple its stray flux into a Nb nanoSQUID. We are thus able to measure both the NT's volume magnetizatio…
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We investigate the magnetization reversal mechanism in an individual permalloy (Py) nanotube (NT) using a hybrid magnetometer consisting of a nanometer-scale SQUID (nanoSQUID) and a cantilever torque sensor. The Py NT is affixed to the tip of a Si cantilever and positioned in order to optimally couple its stray flux into a Nb nanoSQUID. We are thus able to measure both the NT's volume magnetization by dynamic cantilever magnetometry and its stray flux using the nanoSQUID. We observe a training effect and temperature dependence in the magnetic hysteresis, suggesting an exchange bias. We find a low blocking temperature $T_B = 18 \pm 2$ K, indicating the presence of a thin antiferromagnetic native oxide, as confirmed by X-ray absorption spectroscopy on similar samples. Furthermore, we measure changes in the shape of the magnetic hysteresis as a function of temperature and increased training. These observations show that the presence of a thin exchange-coupled native oxide modifies the magnetization reversal process at low temperatures. Complementary information obtained via cantilever and nanoSQUID magnetometry allows us to conclude that, in the absence of exchange coupling, this reversal process is nucleated at the NT's ends and propagates along its length as predicted by theory.
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Submitted 1 December, 2015;
originally announced December 2015.
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All-carbon vertical van der Waals heterostructures: Non-destructive functionalization of graphene for electronic applications
Authors:
Miroslaw Woszczyna,
Andreas Winter,
Miriam Grothe,
Annika Willunat,
Stefan Wundrack,
Rainer Stosch,
Thomas Weimann,
Franz Ahlers,
Andrey Turchanin
Abstract:
We present a route to non-destructive functionalization of graphene via assembly of vertical all-carbon van der Waals heterostructures. To this end, we employ singlelayer graphene (SLG) sheets grown by low-pressure methane CVD on Cu foils and large-area dielectric ~1 nm thick amino-terminated carbon nanomembranes (NH2-CNMs) generated by electron-beam-induced crosslinking of aromatic self-assembled…
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We present a route to non-destructive functionalization of graphene via assembly of vertical all-carbon van der Waals heterostructures. To this end, we employ singlelayer graphene (SLG) sheets grown by low-pressure methane CVD on Cu foils and large-area dielectric ~1 nm thick amino-terminated carbon nanomembranes (NH2-CNMs) generated by electron-beam-induced crosslinking of aromatic self-assembled monolayers. We encapsulate SLG sheets on oxidized silicon wafers with NH2-CNMs via mechanical stacking and characterize structural, chemical and electronic properties of the formed heterostructures by Raman spectroscopy and X-ray photoelectron spectroscopy as well as by electric and electromagnetic transport measurements. We show that functional amino groups are brought in close vicinity of the SLG sheets and that their transport characteristics are not impaired by this functionalization; moreover, we demonstrate a functional response of the heterostructure devices to the protonation of the amino groups in water. Due to its relative simplicity, the suggested approach opens broad avenues for implementations in graphene-based electronic devices where non-destructive chemical functionalization of graphene is required (e.g., for engineering electrical transducers for chemical and bio-sensing) or as complementary dielectric to graphene in hieratical heterostructures.
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Submitted 8 June, 2014;
originally announced June 2014.
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Functional single-layer graphene sheets from aromatic monolayers
Authors:
Dan G. Matei,
Nils-Eike Weber,
Simon Kurasch,
Stefan Wundrack,
Miroslaw Woszczyna,
Miriam Grothe,
Thomas Weimann,
Franz Ahlers,
Rainer Stosch,
Ute Kaiser,
Andrey Turchanin
Abstract:
We demonstrate how self-assembled monolayers of aromatic molecules on copper substrates can be converted into high-quality single-layer graphene using low-energy electron irradiation and subsequent annealing. We characterize this two-dimensional solid state transformation on the atomic scale and study the physical and chemical properties of the formed graphene sheets by complementary microscopic a…
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We demonstrate how self-assembled monolayers of aromatic molecules on copper substrates can be converted into high-quality single-layer graphene using low-energy electron irradiation and subsequent annealing. We characterize this two-dimensional solid state transformation on the atomic scale and study the physical and chemical properties of the formed graphene sheets by complementary microscopic and spectroscopic techniques and by electrical transport measurements. As substrates we successfully use Cu(111) single crystals and the technologically relevant polycrystalline copper foils.
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Submitted 8 June, 2014;
originally announced June 2014.
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A self-referenced single-electron quantized-current source
Authors:
Lukas Fricke,
Michael Wulf,
Bernd Kaestner,
Frank Hohls,
Philipp Mirovsky,
Brigitte Mackrodt,
Ralf Dolata,
Thomas Weimann,
Klaus Pierz,
Uwe Siegner,
Hans W. Schumacher
Abstract:
With the anticipated redefinition of the international system of units (SI) the base units will be linked to fundamental constants of nature [1]. As for the electrical base unit "Ampere", it will be linked to the elementary charge e, requiring a corresponding quantum standard [2, 3]. Many concepts for such a standard have been investigated [4-14] relying on controlling the time-dependent tunnellin…
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With the anticipated redefinition of the international system of units (SI) the base units will be linked to fundamental constants of nature [1]. As for the electrical base unit "Ampere", it will be linked to the elementary charge e, requiring a corresponding quantum standard [2, 3]. Many concepts for such a standard have been investigated [4-14] relying on controlling the time-dependent tunnelling of electrons. However, the stochastic nature of quantum mechanical tunnelling intrinsically evokes uncontrolled deviations from the nominally quantized current. Alternatively, the counting of electrons [15, 16] has been explored but is severely limited in current amplitude and uncertainty by the low detector bandwidth. The late M. Wulf proposed [17] that this fundamental problem of electrical quantum metrology could be overcome by combining serial single-electron pumps with charge detectors allowing the generation of a quantized current and the in-situ detection of its stochastic deviations. Here, we experimentally demonstrate such quantized-current generation with in-situ detection of tunnelling errors at low frequencies and a reduction of the total current uncertainty by more than one order of magnitude. After frequency scaling this should enable a validated primary standard for the redefined SI base unit Ampere.
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Submitted 19 December, 2013;
originally announced December 2013.
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Characterization of Anomalous Pair Currents in Josephson Junction Networks
Authors:
I. Ottaviani,
M. Lucci,
R. Menditto,
V. Merlo,
M. Salvato,
M. Cirillo F. Mueller,
T. Weimann,
M. G. Castellano,
F. Chiarello,
G. Torrioli,
R. Russo
Abstract:
Measurements performed on superconductive networks shaped in the form of planar graphs display anomalously large currents when specific branches are biased. The temperature dependencies of these currents evidence that their origin is due to Cooper pair hopping through the Josephson junctions connecting the superconductive islands of the array. The experimental data are discussed in terms of a theo…
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Measurements performed on superconductive networks shaped in the form of planar graphs display anomalously large currents when specific branches are biased. The temperature dependencies of these currents evidence that their origin is due to Cooper pair hopping through the Josephson junctions connecting the superconductive islands of the array. The experimental data are discussed in terms of a theoretical model which predicts, for the system under consideration, an inhomogeneous Cooper pair distribution on the superconductive islands of the network.
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Submitted 11 September, 2013;
originally announced September 2013.
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Reversal mechanism of an individual Ni nanotube simultaneously studied by torque and SQUID magnetometry
Authors:
A. Buchter,
J. Nagel,
D. Rüffer,
F. Xue,
D. P. Weber,
O. F. Kieler,
T. Weimann,
J. Kohlmann,
A. B. Zorin,
E. Russo-Averchi,
R. Huber,
P. Berberich,
A. Fontcuberta i Morral,
M. Kemmler,
R. Kleiner,
D. Koelle,
D. Grundler,
M. Poggio
Abstract:
Using an optimally coupled nanometer-scale superconducting quantum interference device, we measure the magnetic flux originating from an individual ferromagnetic Ni nanotube attached to a Si cantilever. At the same time, we detect the nanotube's volume magnetization using torque magnetometry. We observe both the predicted reversible and irreversible reversal processes. A detailed comparison with m…
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Using an optimally coupled nanometer-scale superconducting quantum interference device, we measure the magnetic flux originating from an individual ferromagnetic Ni nanotube attached to a Si cantilever. At the same time, we detect the nanotube's volume magnetization using torque magnetometry. We observe both the predicted reversible and irreversible reversal processes. A detailed comparison with micromagnetic simulations suggests that vortex-like states are formed in different segments of the individual nanotube. Such stray-field free states are interesting for memory applications and non-invasive sensing.
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Submitted 18 July, 2013; v1 submitted 28 May, 2013;
originally announced May 2013.
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Nanoscale multifunctional sensor formed by a Ni nanotube and a scanning Nb nanoSQUID
Authors:
J. Nagel,
A. Buchter,
F. Xue,
O. F. Kieler,
T. Weimann,
J. Kohlmann,
A. B. Zorin,
D. Rüffer,
E. Russo-Averchi,
R. Huber,
P. Berberich,
A. Fontcuberta i Morral,
D. Grundler,
R. Kleiner,
D. Koelle,
M. Poggio,
M. Kemmler
Abstract:
Nanoscale magnets might form the building blocks of next generation memories. To explore their functionality, magnetic sensing at the nanoscale is key. We present a multifunctional combination of a scanning nanometer-sized superconducting quantum interference device (nanoSQUID) and a Ni nanotube attached to an ultrasoft cantilever as a magnetic tip. We map out and analyze the magnetic coupling bet…
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Nanoscale magnets might form the building blocks of next generation memories. To explore their functionality, magnetic sensing at the nanoscale is key. We present a multifunctional combination of a scanning nanometer-sized superconducting quantum interference device (nanoSQUID) and a Ni nanotube attached to an ultrasoft cantilever as a magnetic tip. We map out and analyze the magnetic coupling between the Ni tube and the Nb nanoSQUID, demonstrate imaging of an Abrikosov vortex trapped in the SQUID structure - which is important in ruling out spurious magnetic signals - and reveal the high potential of the nanoSQUID as an ultrasensitive displacement detector. Our results open a new avenue for fundamental studies of nanoscale magnetism and superconductivity.
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Submitted 6 May, 2013;
originally announced May 2013.
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Bilayer Graphene Quantum Dot Defined by Topgates
Authors:
André Müller,
Bernd Kaestner,
Frank Hohls,
Thomas Weimann,
Klaus Pierz,
Hans W. Schumacher
Abstract:
We investigate the application of nanoscale topgates on exfoliated bilayer graphene to define quantum dot devices. At temperatures below 500 mK the conductance underneath the grounded gates is suppressed, which we attribute to nearest neighbour hopping and strain-induced piezoelectric fields. The gate-layout can thus be used to define resistive regions by tuning into the corresponding temperature…
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We investigate the application of nanoscale topgates on exfoliated bilayer graphene to define quantum dot devices. At temperatures below 500 mK the conductance underneath the grounded gates is suppressed, which we attribute to nearest neighbour hopping and strain-induced piezoelectric fields. The gate-layout can thus be used to define resistive regions by tuning into the corresponding temperature range. We use this method to define a quantum dot structure in bilayer graphene showing Coulomb blockade oscillations consistent with the gate layout.
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Submitted 19 March, 2014; v1 submitted 29 April, 2013;
originally announced April 2013.
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Nb nano superconducting quantum interference devices with high spin sensitivity for operation in magnetic fields up to 0.5\,T
Authors:
Roman Wölbing,
Joachim Nagel,
Tobias Schwarz,
Oliver Kieler,
Thomas Weimann,
Johannes Kohlmann,
Alexander Zorin,
Matthias Kemmler,
Reinhold Kleiner,
Dieter Koelle
Abstract:
We investigate electric transport and noise properties of microstrip-type submicron direct current superconducting quantum interference devices (dc SQUIDs) based on Nb thin films and overdamped Josephson junctions with a HfTi barrier. The SQUIDs were designed for optimal spin sensitivity $S_μ^{1/2}$ upon operation in intermediate magnetic fields $B$ (tens of mT), applied perpendicular to the subst…
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We investigate electric transport and noise properties of microstrip-type submicron direct current superconducting quantum interference devices (dc SQUIDs) based on Nb thin films and overdamped Josephson junctions with a HfTi barrier. The SQUIDs were designed for optimal spin sensitivity $S_μ^{1/2}$ upon operation in intermediate magnetic fields $B$ (tens of mT), applied perpendicular to the substrate plane. Our so far best SQUID can be continuously operated in fields up to $B\approx\pm50\,\rm{mT}$ with rms flux noise $S_{Φ,\rm w}^{1/2}\leq250\,\rm{nΦ_0/Hz^{1/2}}$ in the white noise regime and spin sensitivity $S_μ^{1/2}\leq29\,\rm{μ_B/Hz^{1/2}}$. Furthermore, we demonstrate operation in $B=0.5\,\rm{T}$ with high sensitivity in flux $S_{Φ,\rm w}^{1/2}\approx680\,\rm{nΦ_0/Hz^{1/2}}$ and in electron spin $S_μ^{1/2}\approx79\,\rm{μ_B/Hz^{1/2}}$. We discuss strategies to further improve the nanoSQUID performance.
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Submitted 29 April, 2013;
originally announced April 2013.
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Counting statistics for electron capture in a dynamic quantum dot
Authors:
Lukas Fricke,
Michael Wulf,
Bernd Kaestner,
Vyacheslavs Kashcheyevs,
Janis Timoshenko,
Pavel Nazarov,
Frank Hohls,
Philipp Mirovsky,
Brigitte Mackrodt,
Ralf Dolata,
Thomas Weimann,
Klaus Pierz,
Hans W. Schumacher
Abstract:
We report non-invasive single-charge detection of the full probability distribution $P_n$ of the initialization of a quantum dot with $n$ electrons for rapid decoupling from an electron reservoir. We analyze the data in the context of a model for sequential tunneling pinch-off, which has generic solutions corresponding to two opposing mechanisms. One limit considers sequential "freeze out" of an a…
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We report non-invasive single-charge detection of the full probability distribution $P_n$ of the initialization of a quantum dot with $n$ electrons for rapid decoupling from an electron reservoir. We analyze the data in the context of a model for sequential tunneling pinch-off, which has generic solutions corresponding to two opposing mechanisms. One limit considers sequential "freeze out" of an adiabatically evolving grand canonical distribution, the other one is an athermal limit equivalent to the solution of a generalized decay cascade model. We identify the athermal capturing mechanism in our sample, testifying to the high precision of our combined theoretical and experimental methods. The distinction between the capturing mechanisms allows to derive efficient experimental strategies for improving the initialization.
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Submitted 8 November, 2012;
originally announced November 2012.
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Precision quantization of Hall resistance in transferred graphene
Authors:
Mirosław Woszczyna,
Miriam Friedemann,
Martin Götz,
Eckart Pesel,
Klaus Pierz,
Thomas Weimann,
Franz J. Ahlers
Abstract:
We show that quantum resistance standards made of transferred graphene reach the uncertainty of semiconductor devices, the current reference system in metrology. A large graphene device (150 \times 30 \mum2), exfoliated and transferred onto GaAs, revealed a quantization with a precision of (-5.1 \pm 6.3) \times 10-9 accompanied by a vanishing longitudinal resistance at current levels exceeding 10…
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We show that quantum resistance standards made of transferred graphene reach the uncertainty of semiconductor devices, the current reference system in metrology. A large graphene device (150 \times 30 \mum2), exfoliated and transferred onto GaAs, revealed a quantization with a precision of (-5.1 \pm 6.3) \times 10-9 accompanied by a vanishing longitudinal resistance at current levels exceeding 10 \muA. While such performance had previously only been achieved with epitaxially grown graphene, our experiments demonstrate that transfer steps, inevitable for exfoliated graphene or graphene grown by chemical vapor deposition (CVD), are compatible with the requirements of high quality quantum resistance standards.
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Submitted 23 April, 2012; v1 submitted 8 March, 2012;
originally announced March 2012.
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Versatile sputtering technology for Al2O3 gate insulators on graphene
Authors:
M. Friedemann,
M. Woszczyna,
A. Müller,
S. Wundrack,
T. Dziomba,
Th. Weimann,
Th. Seyller,
F. Ahlers
Abstract:
We report a novel fabrication method of graphene Al2O3 gate insulators based on sputtering. Electrical performance of dual-gated mono- and bilayer exfoliated graphene devices is presented. Sputtered Al2O3 layers possess comparable quality to oxides obtained by atomic layer deposition (ALD) with respect to a high relative dielectric constant of about 8, as well as low-hysteresis performance and hig…
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We report a novel fabrication method of graphene Al2O3 gate insulators based on sputtering. Electrical performance of dual-gated mono- and bilayer exfoliated graphene devices is presented. Sputtered Al2O3 layers possess comparable quality to oxides obtained by atomic layer deposition (ALD) with respect to a high relative dielectric constant of about 8, as well as low-hysteresis performance and high breakdown voltage. We observe a moderate carrier mobility of about 1000 cm2/Vs in graphene and 350 cm2/Vs in its bilayer due to increased resonant scattering on atomic scale defects. Most likely this originated from the thin Al precursor layer evaporated prior to sputtering the Al2O3 gate oxide.
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Submitted 7 October, 2011;
originally announced October 2011.
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Superconducting quantum interference devices with submicron Nb/HfTi/Nb junctions for investigation of small magnetic particles
Authors:
J. Nagel,
O. F. Kieler,
T. Weimann,
R. Wölbing,
J. Kohlmann,
A. B. Zorin,
R. Kleiner,
D. Koelle,
M. Kemmler
Abstract:
We investigated, at temperature $4.2\,\mathrm{K}$, electric transport, flux noise and resulting spin sensitivity of miniaturized Nb direct current superconducting quantum interference devices (SQUIDs) based on submicron Josephson junctions with HfTi barriers. The SQUIDs are either of the magnetometer-type or gradiometric in layout. In the white noise regime, for the best magnetometer we obtain a f…
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We investigated, at temperature $4.2\,\mathrm{K}$, electric transport, flux noise and resulting spin sensitivity of miniaturized Nb direct current superconducting quantum interference devices (SQUIDs) based on submicron Josephson junctions with HfTi barriers. The SQUIDs are either of the magnetometer-type or gradiometric in layout. In the white noise regime, for the best magnetometer we obtain a flux noise $S_Φ^{1/2}=250\,\mathrm{n}Φ_0/\mathrm{Hz}^{1/2}$, corresponding to a spin sensitivity $S^{1/2}_μ\,\ge\,29\,μ_B/\mathrm{Hz}^{1/2}$. For the gradiometer we find $S_Φ^{1/2}=300\,\mathrm{n}Φ_0/\mathrm{Hz}^{1/2}$ and $S^{1/2}_μ\,\ge\,44\,μ_B/\mathrm{Hz}^{1/2}$. The devices can still be optimized with respect to flux noise and coupling between a magnetic particle and the SQUID, leaving room for further improvement towards single spin resolution.
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Submitted 10 June, 2011;
originally announced June 2011.
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Conversion of self-assembled monolayers into nanocrystalline graphene: Structure and electric transport
Authors:
Andrey Turchanin,
Dirk Weber,
Matthias Buenfeld,
Christian Kisielowski,
Mikhail V. Fistul,
Konstantin B. Efetov,
Thomas Weimann,
Rainer Stosch,
Joachim Mayer,
Armin Golzhauser
Abstract:
Graphene-based materials have been suggested for applications ranging from nanoelectronics to nanobiotechnology. However, the realization of graphene-based technologies will require large quantities of free-standing two-dimensional (2D) carbon materials with tuneable physical and chemical properties. Bottom-up approaches via molecular self-assembly have great potential to fulfil this demand. Here,…
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Graphene-based materials have been suggested for applications ranging from nanoelectronics to nanobiotechnology. However, the realization of graphene-based technologies will require large quantities of free-standing two-dimensional (2D) carbon materials with tuneable physical and chemical properties. Bottom-up approaches via molecular self-assembly have great potential to fulfil this demand. Here, we report on the fabrication and characterization of graphene made by electron-radiation induced cross-linking of aromatic self-assembled monolayers (SAMs) and their subsequent annealing. In this process, the SAM is converted into a nanocrystalline graphene sheet with well defined thickness and arbitrary dimensions. Electric transport data demonstrate that this transformation is accompanied by an insulator to metal transition that can be utilized to control electrical properties such as conductivity, electron mobility and ambipolar electric field effect of the fabricated graphene sheets. The suggested route opens broad prospects towards the engineering of free-standing 2D carbon materials with tuneable properties on various solid substrates and on holey substrates as suspended membranes.
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Submitted 29 May, 2011;
originally announced May 2011.
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One nanometer thin carbon nanosheets with tunable conductivity and stiffness
Authors:
Andrey Turchanin,
Andre Beyer,
Christoph Nottbohm,
Xianghui Zhang,
Rainer Stosch,
Alla Sologubenko,
Joachim Mayer,
Peter Hinze,
Thomas Weimann,
Armin Golzhauser
Abstract:
We present a new route for the fabrication of ultrathin (~1 nm) carbon films and membranes, whose electrical behavior can be tuned from insulating to conducting. Self-assembled monolayers of biphenyls are cross-linked by electrons, detached from the surfaces and subsequently pyrolized. Above 1000K, the cross-linked aromatic monolayer forms a mechanically stable graphitic phase. The transition is a…
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We present a new route for the fabrication of ultrathin (~1 nm) carbon films and membranes, whose electrical behavior can be tuned from insulating to conducting. Self-assembled monolayers of biphenyls are cross-linked by electrons, detached from the surfaces and subsequently pyrolized. Above 1000K, the cross-linked aromatic monolayer forms a mechanically stable graphitic phase. The transition is accompanied by a drop of the sheet resistivity from ~10^8 to ~10^2 kOhm/sq and a mechanical stiffening of the nanomembranes from ~10 to ~50 GPa. The technical applicability of the nanosheets is demonstrated by incorporating them into a microscopic pressure sensor
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Submitted 29 May, 2011;
originally announced May 2011.
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Graphene p-n junction Arrays as Quantum-Hall Resistance Standards
Authors:
Mirosław Woszczyna,
Miriam Friedemann,
Thorsten Dziomba,
Thomas Weimann,
Franz J. Ahlers
Abstract:
We demonstrate a device concept to fabricate resistance standards made of quantum Hall series arrays by using p-type and n-type graphene. The ambipolar nature of graphene allows fabricating series quantum Hall resistors without complex multi-layer metal interconnect technology, which is required when using conventional GaAs two-dimensional electron systems. As a prerequisite for a precise resistan…
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We demonstrate a device concept to fabricate resistance standards made of quantum Hall series arrays by using p-type and n-type graphene. The ambipolar nature of graphene allows fabricating series quantum Hall resistors without complex multi-layer metal interconnect technology, which is required when using conventional GaAs two-dimensional electron systems. As a prerequisite for a precise resistance standard we confirm the vanishing of longitudinal resistance across a p-n junction for metrological relevant current levels in the range of a few \muA.
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Submitted 24 June, 2011; v1 submitted 4 May, 2011;
originally announced May 2011.
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Magneto-Transport Properties of Exfoliated Graphene on GaAs
Authors:
Mirosław Woszczyna,
Miriam Friedemann,
Klaus Pierz,
Thomas Weimann,
Franz J. Ahlers
Abstract:
We studied the magneto-transport properties of graphene prepared by exfoliation on a III V semiconductor substrate. Tuneability of the carrier density of graphene was achieved by using a doped GaAs substrate as a back-gate. A GaAs/AlAs multilayer, designed to render the exfoliated graphene flakes visible, also provides the required back-gate insulation. Good tuneability of the graphene carrier den…
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We studied the magneto-transport properties of graphene prepared by exfoliation on a III V semiconductor substrate. Tuneability of the carrier density of graphene was achieved by using a doped GaAs substrate as a back-gate. A GaAs/AlAs multilayer, designed to render the exfoliated graphene flakes visible, also provides the required back-gate insulation. Good tuneability of the graphene carrier density is obtained, and the typical Dirac resistance characteristic is observed despite the limited height of the multilayer barrier compared to the usual SiO2 oxide barrier on doped silicon. In a magnetic field weak localization effects as well as the quantum Hall effect of a graphene monolayer are studied.
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Submitted 7 June, 2011; v1 submitted 17 March, 2011;
originally announced March 2011.
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Synchronized single electron emission from dynamical quantum dots
Authors:
P. Mirovsky,
B. Kaestner,
C. Leicht,
A. C. Welker,
T. Weimann,
K. Pierz,
H. W. Schumacher
Abstract:
We study synchronized quantized charge pumping through several dynamical quantum dots (QDs) driven by a single time modulated gate signal. We show that the main obstacle for synchronization being the lack of uniformity can be overcome by operating the QDs in the decay cascade regime. We discuss the mechanism responsible for lifting the stringent uniformity requirements. This enhanced functionality…
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We study synchronized quantized charge pumping through several dynamical quantum dots (QDs) driven by a single time modulated gate signal. We show that the main obstacle for synchronization being the lack of uniformity can be overcome by operating the QDs in the decay cascade regime. We discuss the mechanism responsible for lifting the stringent uniformity requirements. This enhanced functionality of dynamical QDs might find applications in nanoelectronics and quantum metrology.
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Submitted 14 December, 2010; v1 submitted 11 November, 2010;
originally announced November 2010.
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Generation of energy selective excitations in quantum Hall edge states
Authors:
C. Leicht,
P. Mirovsky,
B. Kaestner,
F. Hohls,
V. Kashcheyevs,
E. V. Kurganova,
U. Zeitler,
T. Weimann,
K. Pierz,
H. W. Schumacher
Abstract:
We operate an on-demand source of single electrons in high perpendicular magnetic fields up to 30T, corresponding to a filling factor below 1/3. The device extracts and emits single charges at a tunable energy from and to a two-dimensional electron gas, brought into well defined integer and fractional quantum Hall (QH) states. It can therefore be used for sensitive electrical transport studies, e.…
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We operate an on-demand source of single electrons in high perpendicular magnetic fields up to 30T, corresponding to a filling factor below 1/3. The device extracts and emits single charges at a tunable energy from and to a two-dimensional electron gas, brought into well defined integer and fractional quantum Hall (QH) states. It can therefore be used for sensitive electrical transport studies, e.g. of excitations and relaxation processes in QH edge states.
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Submitted 29 September, 2010;
originally announced September 2010.
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Non-adiabatic pumping of single electrons affected by magnetic fields
Authors:
Christoph Leicht,
Bernd Kaestner,
Vyacheslavs Kashcheyevs,
Philipp Mirovsky,
Thomas Weimann,
Klaus Pierz,
Hans-Werner Schumacher
Abstract:
Non-adiabatic pumping of discrete charges, realized by a dynamical quantum dot in an AlGaAs/GaAs heterostructure, is studied under influence of a perpendicular magnetic field. Application of an oscillating voltage in the GHz-range to one of two top gates, crossing a narrow wire and confining a quantum dot, leads to quantized pumped current plateaus in the gate characteristics. The regime of pump…
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Non-adiabatic pumping of discrete charges, realized by a dynamical quantum dot in an AlGaAs/GaAs heterostructure, is studied under influence of a perpendicular magnetic field. Application of an oscillating voltage in the GHz-range to one of two top gates, crossing a narrow wire and confining a quantum dot, leads to quantized pumped current plateaus in the gate characteristics. The regime of pumping one single electron is traced back to the diverse tunneling processes into and out-of the dot. Extending the theory to multiple electrons allows to investigate conveniently the pumping characteristics in an applied magnetic field. In this way, a qualitatively different behavior between pumping even or odd numbers of electrons is extracted.
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Submitted 15 September, 2009;
originally announced September 2009.
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Coherent Activation of Zero-Field Fiske Modes in Arrays of Josephson Junctions
Authors:
I. Ottaviani,
M. Cirillo,
M. Lucci,
V. Merlo,
M. Salvato,
M. G. Castellano,
G. Torrioli,
F. Mueller,
T. Weimann
Abstract:
Series arrays of Josephson junctions show evidence of a mode in which all the junctions oscillate in synchronism on voltage resonances appearing, in zero external magnetic field, at multiples of the fundamental Fiske step spacing. The measurements show that the current amplitude of the resonances increases linearly as their voltages are summed. Investigation of the nature of the coherent mode by…
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Series arrays of Josephson junctions show evidence of a mode in which all the junctions oscillate in synchronism on voltage resonances appearing, in zero external magnetic field, at multiples of the fundamental Fiske step spacing. The measurements show that the current amplitude of the resonances increases linearly as their voltages are summed. Investigation of the nature of the coherent mode by magnetic field responses of arrays and isolated juctions reveals that the oscillations take place in a parameter plane region where dc magnetic fields only activate boundary current and flux-quanta dynamics can take place.
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Submitted 26 November, 2008;
originally announced November 2008.
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Single-parameter non-adiabatic quantized charge pumping
Authors:
B. Kaestner,
V. Kashcheyevs,
S. Amakawa,
L. Li,
M. D. Blumenthal,
T. J. B. M. Janssen,
G. Hein,
K. Pierz,
T. Weimann,
U. Siegner,
H. W. Schumacher
Abstract:
Controlled charge pumping in an AlGaAs/GaAs gated nanowire by single-parameter modulation is studied experimentally and theoretically. Transfer of integral multiples of the elementary charge per modulation cycle is clearly demonstrated. A simple theoretical model shows that such a quantized current can be generated via loading and unloading of a dynamic quasi-bound state. It demonstrates that no…
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Controlled charge pumping in an AlGaAs/GaAs gated nanowire by single-parameter modulation is studied experimentally and theoretically. Transfer of integral multiples of the elementary charge per modulation cycle is clearly demonstrated. A simple theoretical model shows that such a quantized current can be generated via loading and unloading of a dynamic quasi-bound state. It demonstrates that non-adiabatic blockade of unwanted tunnel events can obliterate the requirement of having at least two phase-shifted periodic signals to realize quantized pumping. The simple configuration without multiple pumping signals might find wide application in metrological experiments and quantum electronics.
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Submitted 6 July, 2007;
originally announced July 2007.
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The effect of thermal annealing on the properties of Al-AlOx-Al single electron tunneling transistors
Authors:
H. Scherer,
Th. Weimann,
A. B. Zorin,
J. Niemeyer
Abstract:
The effect of thermal annealing on the properties of Al-AlOx-Al single electron tunneling transistors is reported. After treatment of the devices by annealing processes in forming gas atmosphere at different temperatures and for different times, distinct and reproducible changes of their resistance and capacitance values were found. According to the temperature regime, we observed different beha…
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The effect of thermal annealing on the properties of Al-AlOx-Al single electron tunneling transistors is reported. After treatment of the devices by annealing processes in forming gas atmosphere at different temperatures and for different times, distinct and reproducible changes of their resistance and capacitance values were found. According to the temperature regime, we observed different behaviors as regards the resistance changes, namely the tendency to decrease the resistance by annealing at T = 200 degree C, but to increase the resistance by annealing at T = 400 degree C. We attribute this behavior to changes in the aluminum oxide barriers of the tunnel junctions. The good reproducibility of these effects with respect to the changes observed allows the proper annealing treatment to be used for post-process tuning of tunnel junction parameters. Also, the influence of the annealing treatment on the noise properties of the transistors at low frequency was investigated. In no case did the noise figures in the 1/f-regime show significant changes.
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Submitted 23 May, 2001;
originally announced May 2001.
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Characterization of All-Chromium Tunnel Junctions and Single Electron Tunneling Devices Fabricated by Direct-Writing Multilayer Technique
Authors:
H. Scherer,
Th. Weimann,
P. Hinze,
B. W. Samwer,
A. B. Zorin,
J. Niemeyer
Abstract:
We report about the fabrication and analysis of the properties of Cr/CrO_x/Cr tunnel junctions and SET transistors, prepared by different variants of direct-writing multilayer technique. In all cases, the CrO_x tunnel barriers were formed in air under ambient conditions. From the experiments on single junctions, values for the effective barrier height and thickness were derived. For the Cr/CrO_x…
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We report about the fabrication and analysis of the properties of Cr/CrO_x/Cr tunnel junctions and SET transistors, prepared by different variants of direct-writing multilayer technique. In all cases, the CrO_x tunnel barriers were formed in air under ambient conditions. From the experiments on single junctions, values for the effective barrier height and thickness were derived. For the Cr/CrO_x/Cr SET transistors we achieved minimal junction areas of 17 x 60 nm^2 using a scanning transmission electron microscope for the e-beam exposure on Si_3N_4 membrane substrate. We discuss the electrical performance of the transistor samples as well as their noise behavior.
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Submitted 6 July, 1999;
originally announced July 1999.
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Superconducting Electrometer Based on the Resistively Shunted Bloch Transistor
Authors:
S. V. Lotkhov,
H. Zangerle,
A. B. Zorin,
T. Weimann,
H. Scherer,
J. Niemeyer
Abstract:
We have fabricated the Bloch transistor shunted on-chip by a small-sized Cr resistor with Rs about 1 kOhm. The Bloch transistor normally consists of two small Josephson junctions connected in series, which in our case have been replaced by two superconducting interferometer loops, each with two junctions in parallel. A capacitively coupled gate is supplied to control the induced charge of the sm…
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We have fabricated the Bloch transistor shunted on-chip by a small-sized Cr resistor with Rs about 1 kOhm. The Bloch transistor normally consists of two small Josephson junctions connected in series, which in our case have been replaced by two superconducting interferometer loops, each with two junctions in parallel. A capacitively coupled gate is supplied to control the induced charge of the small intermediate electrode (island) of the transistor. The measured I-V curves show no hysteresis and correspond to the operation of a effective Josephson junction at the high-damping and strong-noise limits. The critical current of the system was found to be close to its nominal value, that is in accordance with the electromagnetic environment theory. The I-V curves were modulated by the gate with a period of e and a maximum swing of about 2 /mu_V. Such rather moderate modulation results from the Josephson-to- charging energies ratio, Ej/Ec about 9, in our sample being far from its optimum value of 0.3 up to 1.
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Submitted 13 January, 1999;
originally announced January 1999.
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Multilayer technique developed for fabricating Nb-based single-electron devices
Authors:
Alexey B. Pavolotsky,
Thomas Weimann,
Hansjoerg Scherer,
Vladimir A. Krupenin,
Juergen Niemeyer,
Alexander B. Zorin
Abstract:
A reliable process has been developed for the fabrication of all-Nb single-electron circuits, based on spin-on glass planarization. The process steps are the in situ growth of Nb/AlOx/Nb sandwich, definition of the patterns of junctions, base electrodes and wiring by use of reactive ion etching and the planarization of a spin-on glass insulation between base electrode and wiring. A single electr…
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A reliable process has been developed for the fabrication of all-Nb single-electron circuits, based on spin-on glass planarization. The process steps are the in situ growth of Nb/AlOx/Nb sandwich, definition of the patterns of junctions, base electrodes and wiring by use of reactive ion etching and the planarization of a spin-on glass insulation between base electrode and wiring. A single electron transistor made of 0.1 square micrometer area junctions clearly shows the e-periodic Coulomb blockade modulation by a voltage applied to a gate.
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Submitted 17 April, 1998;
originally announced April 1998.
