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Exciplex-driven blue OLEDs: unlocking multifunctionality applications
Authors:
Dominik Weber,
Annika Morgenstern,
Daniel Beer,
Dietrich R. T. Zahn,
Carsten Deibel,
Georgeta Salvan,
Daniel Schondelmaier
Abstract:
We present the development of multifunctional blue-emission organic light-emitting diodes (OLEDs) using TADF-exciplex materials. These OLEDs exhibit sensitivity to external stimuli and achieve a maximum external quantum efficiency (EQE) of 11.6 % through partly liquid processing. This technique allows for large-scale production on arbitrary geometries.
The potential multifunctionality of the dev…
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We present the development of multifunctional blue-emission organic light-emitting diodes (OLEDs) using TADF-exciplex materials. These OLEDs exhibit sensitivity to external stimuli and achieve a maximum external quantum efficiency (EQE) of 11.6 % through partly liquid processing. This technique allows for large-scale production on arbitrary geometries.
The potential multifunctionality of the devices arises from their response to low external magnetic fields (up to 100 mT) with an efficiency up to 2.5 % for magnetoconductance, while maximum magneto-electroluminescence effects of 4.1 % were detected. We investigated novel aspects, including the utilization of two organic materials without further doping and the investigation of the impact of 2,2',2''-(1,3,5-Benzinetriyl)-tris(1phenyl-1-H-benzimidazole) (TPBi) processing in liquid and vapor form. The insights gained provide a fundamental understanding regarding the applicability of exciplex (EX) materials for fully solution-processed OLEDs through a deliberate omission of doping. Our work represents a significant advancement on the path towards multifunctional OLED technology, with potential applications in cost-efficient, scalable organic full-color displays and advanced sensing system
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Submitted 5 March, 2024;
originally announced March 2024.
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Probing magnetic ordering in air stable iron-rich van der Waals minerals
Authors:
Muhammad Zubair Khan,
Oleg E. Peil,
Apoorva Sharma,
Oleksandr Selyshchev,
Sergio Valencia,
Florian Kronast,
Maik Zimmermann,
Muhammad Awais Aslam,
Johann G. Raith,
Christian Teichert,
Dietrich R. T. Zahn,
Georgeta Salvan,
Aleksandar Matković,
Chair of Physics,
Department Physics,
Mechanics,
Electrical engineering,
Montanuniversität Leoben,
8700,
Leoben,
Austria.,
Materials Center Leoben Forschung GmbH,
8700,
Leoben,
Austria.
, et al. (24 additional authors not shown)
Abstract:
In the rapidly expanding field of two-dimensional materials, magnetic monolayers show great promise for the future applications in nanoelectronics, data storage, and sensing. The research in intrinsically magnetic two-dimensional materials mainly focuses on synthetic iodide and telluride based compounds, which inherently suffer from the lack of ambient stability. So far, naturally occurring layere…
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In the rapidly expanding field of two-dimensional materials, magnetic monolayers show great promise for the future applications in nanoelectronics, data storage, and sensing. The research in intrinsically magnetic two-dimensional materials mainly focuses on synthetic iodide and telluride based compounds, which inherently suffer from the lack of ambient stability. So far, naturally occurring layered magnetic materials have been vastly overlooked. These minerals offer a unique opportunity to explore air-stable complex layered systems with high concentration of local moment bearing ions. We demonstrate magnetic ordering in iron-rich two-dimensional phyllosilicates, focusing on mineral species of minnesotaite, annite, and biotite. These are naturally occurring van der Waals magnetic materials which integrate local moment baring ions of iron via magnesium/aluminium substitution in their octahedral sites. Due to self-inherent capping by silicate/aluminate tetrahedral groups, ultra-thin layers are air-stable. Chemical characterization, quantitative elemental analysis, and iron oxidation states were determined via Raman spectroscopy, wavelength disperse X-ray spectroscopy, X-ray absorption spectroscopy, and X-ray photoelectron spectroscopy. Superconducting quantum interference device magnetometry measurements were performed to examine the magnetic ordering. These layered materials exhibit paramagnetic or superparamagnetic characteristics at room temperature. At low temperature ferrimagnetic or antiferromagnetic ordering occurs, with the critical ordering temperature of 38.7 K for minnesotaite, 36.1 K for annite, and 4.9 K for biotite. In-field magnetic force microscopy on iron bearing phyllosilicates confirmed the paramagnetic response at room temperature, present down to monolayers.
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Submitted 13 April, 2023;
originally announced April 2023.
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Exciton tuning in monolayer WSe$_2$ via substrate induced electron doping
Authors:
Yang Pan,
Mahfujur Rahaman,
Lu He,
Ilya Milekhin,
Gopinath Manoharan,
Muhammad Awais Aslam,
Thomas Blaudeck,
Andreas Willert,
Aleksandar Matković,
Teresa I. Madeira,
Dietrich R. T. Zahn
Abstract:
We report on large exciton tuning in WSe$_2$ monolayers via substrate induced non-degenerate doping. We observe a redshift of $\sim$62 meV for the $A$ exciton together with a 1-2 orders of magnitude photoluminescence (PL) quenching when the monolayer WSe$_2$ is brought in contact with highly oriented pyrolytic graphite (HOPG) compared to the dielectric substrates such as hBN and SiO$_2$. As the ev…
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We report on large exciton tuning in WSe$_2$ monolayers via substrate induced non-degenerate doping. We observe a redshift of $\sim$62 meV for the $A$ exciton together with a 1-2 orders of magnitude photoluminescence (PL) quenching when the monolayer WSe$_2$ is brought in contact with highly oriented pyrolytic graphite (HOPG) compared to the dielectric substrates such as hBN and SiO$_2$. As the evidence of doping from HOPG to WSe$_2$, a drastic increase of the trion emission intensity was observed. Using a systematic PL and Kelvin probe force microscopy (KPFM) investigation on WSe$_2$/HOPG, WSe$_2$/hBN, and WSe$_2$/graphene, we conclude that this unique excitonic behavior is induced by electron doping from the substrate. Our results propose a simple yet efficient way for exciton tuning in monolayer WSe$_2$, which plays a central role in the fundamental understanding and further device development.
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Submitted 20 July, 2022; v1 submitted 6 July, 2022;
originally announced July 2022.
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Signature of lattice dynamics in twisted 2D homo/hetero-bilayers
Authors:
Yang Pan,
Shutong Li,
Mahfujur Rahaman,
Ilya Milekhin,
Dietrich R. T. Zahn
Abstract:
Twisted 2D bilayer materials are created by artificial stacking of two monolayer crystal networks of 2D materials with a desired twisting angle $θ$. The material forms a moiré superlattice due to the periodicity of both top and bottom layer crystal structure. The optical properties are modified by lattice reconstruction and phonon renormalization, which makes optical spectroscopy an ideal characte…
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Twisted 2D bilayer materials are created by artificial stacking of two monolayer crystal networks of 2D materials with a desired twisting angle $θ$. The material forms a moiré superlattice due to the periodicity of both top and bottom layer crystal structure. The optical properties are modified by lattice reconstruction and phonon renormalization, which makes optical spectroscopy an ideal characterization tool to study novel physics phenomena. Here, we report a Raman investigation on a full period of the twisted bilayer (tB) WSe$_2$ moiré superlattice (\textit i.e. 0° $\leq θ\leq$ 60°). We observe that the intensity ratio of two Raman peaks, $B_{2g}$ and $E_{2g}/A_{1g}$ correlates with the evolution of moiré period. The Raman intensity ratio as a function of twisting angle follows an exponential profile matching the moiré period with two local maxima at 0° and 60° and a minimum at 30°. Using a series of temperature-dependent Raman and photoluminescence (PL) measurements as well as \textit{ab initio} calculations, the intensity ratio $I_{B_{2g}}/I_{E_{2g}/{A_{1g}}}$ is explained as a signature of lattice dynamics in tB WSe$_2$ moiré superlattices. By further exploring different material combinations of twisted hetero-bilayers, the results are extended for all kinds of Mo- and W-based TMDCs.
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Submitted 6 May, 2022;
originally announced May 2022.
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Traps and transport resistance: the next frontier for stable state-of-the-art non-fullerene acceptor solar cells
Authors:
Christopher Wöpke,
Clemens Göhler,
Maria Saladina,
Xiaoyan Du,
Li Nian,
Christopher Greve,
Chenhui Zhu,
Kaila M. Yallum,
Yvonne J. Hofstetter,
David Becker-Koch,
Ning Li,
Thomas Heumüller,
Ilya Milekhin,
Dietrich R. T. Zahn,
Christoph J. Brabec,
Natalie Banerji,
Yana Vaynzof,
Eva M. Herzig,
Roderick C. I. MacKenzie,
Carsten Deibel
Abstract:
Stability is one of the most important challenges facing organic solar cells (OSC) on their path to commercialization. In the high-performance material system PM6:Y6 studied here, investigate degradation mechanisms of inverted photovoltaic devices. We have identified two distinct degradation pathways: one requires presence of both illumination and oxygen and features a short-circuit current reduct…
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Stability is one of the most important challenges facing organic solar cells (OSC) on their path to commercialization. In the high-performance material system PM6:Y6 studied here, investigate degradation mechanisms of inverted photovoltaic devices. We have identified two distinct degradation pathways: one requires presence of both illumination and oxygen and features a short-circuit current reduction, the other one is induced thermally and marked by severe losses of open-circuit voltage and fill factor. We focus our investigation on the thermally accelerated degradation. Our findings show that bulk material properties and interfaces remain remarkably stable, however, aging-induced defect state formation in the active layer remains the primary cause of thermal degradation. The increased trap density leads to higher non-radiative recombination, which limits open-circuit voltage and lowers charge carrier mobility in the photoactive layer. Furthermore, we find the trap-induced transport resistance to be the major reason for the drop in fill factor. Our results suggest that device lifetimes could be significantly increased by marginally suppressing trap formation, leading to a bright future for OSC.
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Submitted 22 March, 2022;
originally announced March 2022.
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Deposition of nanosized amino acid functionalized bismuth oxido clusters on gold surfaces
Authors:
Annika Morgenstern,
Rico Thomas,
Apoorva Sharma,
Marcus Weber,
Oleksandr Selyshchev,
Ilya Milekhin,
Doreen Dentel,
Sibylle Gemming,
Christoph Tegenkamp,
Dietrich R. T. Zahn,
Michael Mehring,
Georgeta Salvan
Abstract:
Bismuth compounds are of growing interest with regard to potential applications in catalysis, medicine and electronics, for which their environmentally benign nature is one of the key factors. The most common starting material is bismuth nitrate, which easily hydrolyses to give a large number of condensation products. The so-called bismuth subnitrates are composed of bismuth oxido clusters of vary…
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Bismuth compounds are of growing interest with regard to potential applications in catalysis, medicine and electronics, for which their environmentally benign nature is one of the key factors. The most common starting material is bismuth nitrate, which easily hydrolyses to give a large number of condensation products. The so-called bismuth subnitrates are composed of bismuth oxido clusters of varying composition and nuclearity. One reason that hampers the further development of bismuth oxido-based materials, however is the low solubility of the subnitrates, which makes targeted immobilisation on substrates challenging. We present an approach towards solubilisation of bismuth oxido clusters by introducing an amino carboxylate as functional group and a study of the growth mode of these atom-precise nanoclusters on gold surfaces. For this purpose the bismuth oxido cluster [Bi38O45(NO3)20(dmso)28](NO3)4*4dmso (dmso=dimethyl sulfoxide) was reacted with the sodium salt of tert-butyloxycabonyl(Boc)-protected phenylalanine (Phe) to give the soluble and chiral nanocluster [Bi38O45(Boc-Phe)24(dmso)9]. The hydrodynamic diameter of the cluster was estimated with (1.4-1.6) nm (in CH3CN) and (2.2 nm-2.9) nm (in Ethanol) based on dynamic light scattering (DLS). The full exchange of the nitrates by the amino carboxylates was proven by NMR and FTIR as well as elemental analysis (EA) and XPS. The solubility of the bismuth oxido cluster in a protic as well as an aprotic polar organic solvent and the growth mode of the clusters on Au upon spin-, dip-, and drop-coating on gold surfaces were studied. Successful deposition of bismuth oxido cluster was proven by powder XRD, FTIR, and XPS while the microstructure of the resulting films was investigated as a function of the deposition method and the solvent used by SEM, AFM, and optical microscopy.
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Submitted 22 March, 2022; v1 submitted 8 March, 2022;
originally announced March 2022.
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Chlorine doping of MoSe2 flakes by ion implantation
Authors:
Slawomir Prucnal,
Arsalan Hashemi,
Mahdi Ghorbani-Asl,
René Hübner,
Juanmei Duan,
Yidan Wei,
Divanshu Sharma,
Dietrich R. T. Zahn,
René Ziegenrücker,
Ulrich Kentsch,
Arkady V. Krasheninnikov,
Manfred Helm,
Shengqiang Zhou
Abstract:
The efficient integration of transition metal dichalcogenides (TMDs) into the current electronic device technology requires mastering the techniques of effective tuning of their optoelectronic properties. Specifically, controllable doping is essential. For conventional bulk semiconductors, ion implantation is the most developed method offering stable and tunable doping. In this work, we demonstrat…
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The efficient integration of transition metal dichalcogenides (TMDs) into the current electronic device technology requires mastering the techniques of effective tuning of their optoelectronic properties. Specifically, controllable doping is essential. For conventional bulk semiconductors, ion implantation is the most developed method offering stable and tunable doping. In this work, we demonstrate n-type doping in MoSe2 flakes realized by low-energy ion implantation of Cl+ ions followed by millisecond-range flash lamp annealing (FLA). We further show that FLA for 3 ms with a peak temperature of about 1000 °C is enough to recrystallize implanted MoSe2. The Cl distribution in few-layer-thick MoSe2 is measured by secondary ion mass spectrometry. An increase in the electron concentration with increasing Cl fluence is determined from the softening and red shift of the Raman-active A_1g phonon mode due to the Fano effect. The electrical measurements confirm the n-type doping of Cl-implanted MoSe2. A comparison of the results of our density functional theory calculations and experimental temperature-dependent micro-Raman spectroscopy data indicates that Cl atoms are incorporated into the atomic network of MoSe2 as substitutional donor impurities.
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Submitted 24 September, 2021;
originally announced September 2021.
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Highly Tunable Magnetic and Magnetotransport Properties of Exchange Coupled Ferromagnet/Antiferromagnet-based Heterostructures
Authors:
Sri Sai Phani Kanth Arekapudi,
Daniel Bülz,
Fabian Ganss,
Fabian Samad,
Chen Luo,
Dietrich R. T. Zahn,
Kilian Lenz,
Georgeta Salvan,
Manfred Albrecht,
Olav Hellwig
Abstract:
Antiferromagnets (AFMs) with zero net magnetization are proposed as active elements in future spintronic devices. Depending on the critical thickness of the AFM thin films and the measurement temperature, bimetallic Mn-based alloys and transition metal oxide-based AFMs can host various coexisting ordered, disordered, and frustrated AFM phases. Such coexisting phases in the exchange coupled ferroma…
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Antiferromagnets (AFMs) with zero net magnetization are proposed as active elements in future spintronic devices. Depending on the critical thickness of the AFM thin films and the measurement temperature, bimetallic Mn-based alloys and transition metal oxide-based AFMs can host various coexisting ordered, disordered, and frustrated AFM phases. Such coexisting phases in the exchange coupled ferromagnetic (FM)/AFM-based heterostructures can result in unusual magnetic and magnetotransport phenomena. Here, we integrate chemically disordered AFM IrMn3 thin films with coexisting AFM phases into complex exchange coupled MgO(001)/Ni3Fe/IrMn3/Ni3Fe/CoO heterostructures and study the structural, magnetic, and magnetotransport properties in various magnetic field cooling states. In particular, we unveil the impact of rotating the relative orientation of the disordered and reversible AFM moments with respect to the irreversible AFM moments on the magnetic and magnetoresistance properties of the exchange coupled heterostructures. We further found that the persistence of AFM grains with thermally disordered and reversible AFM order is crucial for achieving highly tunable magnetic properties and multi-level magnetoresistance states. We anticipate that the introduced approach and the heterostructure architecture can be utilized in future spintronic devices to manipulate the thermally disordered and reversible AFM order at the nanoscale.
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Submitted 16 September, 2021;
originally announced September 2021.
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Radiative Decay of Dark Exciton Related Emission in a Sandwiched Monolayer WSe2 Revealed by Room Temperature Micro and Nano Photoluminescence
Authors:
Mahfujur Rahaman,
Oleksandr Selyshchev,
Yang Pan,
Ilya Milekhin,
Apoorva Sharma,
Georgeta Salvan,
Sibylle Gemming,
Dietrich R T Zahn
Abstract:
TMDCs have attracted a lot of attention in recent years due to their unique indirect to direct band gap transition from bulk to monolayer thickness. Strong confinement in the out-of-plane direction enhances the Coulomb potential between the charged particles (e-h pairs) and thus increases the exciton binding energy dramatically. The lattice inversion asymmetry in a monolayer creates two non-equiva…
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TMDCs have attracted a lot of attention in recent years due to their unique indirect to direct band gap transition from bulk to monolayer thickness. Strong confinement in the out-of-plane direction enhances the Coulomb potential between the charged particles (e-h pairs) and thus increases the exciton binding energy dramatically. The lattice inversion asymmetry in a monolayer creates two non-equivalent (but degenerate in energy) band edges protected by time reversal polarisation via pseudo-spin. However, the presence of strong spin-orbit coupling in the valence band and weak spin-splitting in the conduction band results in the lowest lying exciton in WX2 (X = S, Se) being spin forbidden and optically dark. Because of their long life times, dark excitons (XD) are highly attractive for quantum optics and optoelectronic applications. To date studying XD emission is limited to cryogenic temperature or required very complex experimental configurations to observe them at room temperature (RT). Here, we demonstrate a novel approach of radiative decay of XD related emissions in 1L-WSe2 studied by micro and nano PL at RT. 1L-WSe2 flakes were sandwiched by noble metal (Au or Ag) substrates and PDMS nano-patches providing a strong local out-of-plane dipole moment with respect to the 2D plane. This strong dipole moment not only enhances the XD in WSe2, it also produces bound excitons due to extrinsic charge defects visible at RT. The spatial distributions of these XD related emissions were studied by TEPL with a spatial resolution < 10 nm confirming the confinement of these excitons within the PDMS nano-patches. Finally, by removing the nano-patches from the top of the flakes we are able to recover the bright excitons in the 1L-WSe2. Our approach paves the way for deep understanding and to harness excitonic properties in low dimensional semiconductors, thus offering a platform towards quantum optics.
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Submitted 1 October, 2020; v1 submitted 8 June, 2020;
originally announced June 2020.
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Opto-electronic properties of alpha-In2Se3: single-layer to bulk
Authors:
Yujin Cho,
Sean M. Anderson,
Bernardo S. Mendoza,
Shun Okano,
Ramon Carriles,
N. Arzate,
Anatoli I. Shkrebtii,
Di Wu,
Keji Lai,
D. R. T. Zahn,
M. C. Downer
Abstract:
In this work, we report linear and non-linear spectroscopic measurements of chemically-grown layered (from one to 37 quintuple layers) and bulk alpha-In2Se3 samples over a photon energy range of 1.0--4 eV, and compare with ab initio density functional theory calculations, including bandstructures and G0W0 calculations.
In this work, we report linear and non-linear spectroscopic measurements of chemically-grown layered (from one to 37 quintuple layers) and bulk alpha-In2Se3 samples over a photon energy range of 1.0--4 eV, and compare with ab initio density functional theory calculations, including bandstructures and G0W0 calculations.
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Submitted 29 November, 2019; v1 submitted 5 November, 2019;
originally announced November 2019.
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Transport band gap opening at metal-organic interfaces
Authors:
Francisc Haidu,
Georgeta Salvan,
Dietrich R. T. Zahn,
Lars Smykalla,
Michael Hietschold,
Martin Knupfer
Abstract:
The interface formation between copper phthalocyanine (CuPc) and two representative metal substrates, i.e., Au and Co, was investigated by the combination of ultraviolet photoelectron spectroscopy and inverse photoelectron spectroscopy. The occupied and unoccupied molecular orbitals and thus the transport band gap of CuPc are highly influenced by film thickness, i.e., molecule-substrate distance.…
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The interface formation between copper phthalocyanine (CuPc) and two representative metal substrates, i.e., Au and Co, was investigated by the combination of ultraviolet photoelectron spectroscopy and inverse photoelectron spectroscopy. The occupied and unoccupied molecular orbitals and thus the transport band gap of CuPc are highly influenced by film thickness, i.e., molecule-substrate distance. Due to the image charge potential given by the metallic substrates the transport band gap of CuPc "opens" from $(1.4 \pm 0.3)$ eV for 1 nm thickness to $(2.2 \pm 0.3)$ eV, and saturates at this value above 10 nm CuPc thickness. The interface dipoles with values of 1.2 eV and 1.0 eV for Au and Co substrates, respectively, predominantly depend on the metal substrate work functions. X-ray photoelectron spectroscopy measurements using synchrotron radiation provide detailed information on the interaction between CuPc and the two metal substrates. While charge transfer from the Au or Co substrate to the Cu metal center is present only at sub-monolayer coverages, the authors observe a net charge transfer from the molecule to the Co substrate for films in the nm range. Consequently, the Fermi level is shifted as in the case of a p-type doping of the molecule. This is, however, a competing phenomenon to the energy band shifts due to the image charge potential.
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Submitted 21 February, 2017;
originally announced February 2017.
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Electronic Structure of Manganese Phthalocyanine Modified via Potassium Intercalation: a Comprehensive Experimental Study
Authors:
Francisc Haidu,
Ovidiu D. Gordan,
Dietrich R. T. Zahn,
Lars Smykalla,
Michael Hietschold,
Boris V. Senkovskiy,
Benjamin Mahns,
Martin Knupfer
Abstract:
Potassium (K) intercalated manganese phthalocyanine (MnPc) reveals vast changes of its electronic states close to the Fermi level. However, theoretical studies are controversial regarding the electronic configuration. Here, MnPc doped with K was studied by ultraviolet, X-ray, and inverse photoemission, as well as near edge X-ray absorption fine structure spectroscopy. Upon K intercalation the Ferm…
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Potassium (K) intercalated manganese phthalocyanine (MnPc) reveals vast changes of its electronic states close to the Fermi level. However, theoretical studies are controversial regarding the electronic configuration. Here, MnPc doped with K was studied by ultraviolet, X-ray, and inverse photoemission, as well as near edge X-ray absorption fine structure spectroscopy. Upon K intercalation the Fermi level shifts toward the lowest unoccupied molecular orbital filling it up with donated electrons with the appearance of an additional feature in the energy region of the occupied states. The electronic bands are pinned 0.5 eV above and 0.4 eV below the Fermi level. The branching ratio of the Mn L3 and L2 edges indicate an increase of the spin state. Moreover, the evolution of the Mn L and N K edges reveals strong hybridization between Mn 3d and N 2p states of MnPc and sheds light on the electron occupation in the ground and n-doped configurations.
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Submitted 12 February, 2017;
originally announced February 2017.
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Self-Metalation of Phthalocyanine Molecules with Silver Surface Atoms by Adsorption on Ag(110)
Authors:
Lars Smykalla,
Pavel Shukrynau,
Dietrich R. T. Zahn,
Michael Hietschold
Abstract:
We report that metal-free phthalocyanine (H2Pc) molecules with a central cavity are able to incorporate Ag atoms from an Ag(110) surface thus creating silver-phthalocyanine (AgPc). The reaction was investigated by means of scanning tunneling microscopy (STM) under ultrahigh vacuum, and the metalation of \ce{H2Pc} at the interface was confirmed with X-ray photoelectron spectroscopy. Three different…
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We report that metal-free phthalocyanine (H2Pc) molecules with a central cavity are able to incorporate Ag atoms from an Ag(110) surface thus creating silver-phthalocyanine (AgPc). The reaction was investigated by means of scanning tunneling microscopy (STM) under ultrahigh vacuum, and the metalation of \ce{H2Pc} at the interface was confirmed with X-ray photoelectron spectroscopy. Three different kinds of molecules were found on the surface that are assigned to H2Pc, the corresponding dehydrogenated molecules (Pc) and AgPc. The relative amounts of Pc and AgPc increase with increasing annealing temperature. We suggest that the reaction with Ag atoms from the steps of the surface occurs favorably only for already dehydrogenated molecules; thus, the metalation of H2Pc is likely limited by the heat-induced dehydrogenation. Density functional theory simulations of the reaction path are presented to corroborate this hypothesis.
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Submitted 29 December, 2016;
originally announced December 2016.
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2D vibrational properties of epitaxial silicene on Ag(111) probed by in situ Raman Spectroscopy
Authors:
Dmytro Solonenko,
Ovidiu D. Gordan,
Guy Le Lay,
Dietrich R. T. Zahn,
Patrick Vogt
Abstract:
The two-dimensional silicon allotrope, silicene, could spur the development of new and original concepts in Si-based nanotechnology. Up to now silicene can only be epitaxially synthesized on a supporting substrate such as Ag(111). Even though the structural and electronic properties of these epitaxial silicene layers have been intensively studied, very little is known about its vibrational charact…
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The two-dimensional silicon allotrope, silicene, could spur the development of new and original concepts in Si-based nanotechnology. Up to now silicene can only be epitaxially synthesized on a supporting substrate such as Ag(111). Even though the structural and electronic properties of these epitaxial silicene layers have been intensively studied, very little is known about its vibrational characteristics. Here, we present a detailed study of epitaxial silicene on Ag(111) using \textit{in situ} Raman spectroscopy, which is one of the most extensively employed experimental techniques to characterize 2D materials, such as graphene, transition metal dichalcogenides, and black phosphorous. The vibrational fingerprint of epitaxial silicene, in contrast to all previous interpretations, is characterized by three distinct phonon modes with A and E symmetries. The temperature dependent spectral evolution of these modes demonstrates unique thermal properties of epitaxial silicene and a significant electron-phonon coupling. These results unambiguously support the purely two-dimensional character of epitaxial silicene up to about $300^{\circ}C$, whereupon a 2D-to-3D phase transition takes place.
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Submitted 5 May, 2016;
originally announced May 2016.
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Comparative Study of Optical and Magneto-Optical Properties of Normal, Disordered and Inverse Spinel Type Oxides
Authors:
Vitaly Zviagin,
Peter Richter,
Tammo Böntgen,
Michael Lorenz,
Michael Ziese,
Dietrich R. T. Zahn,
Georgeta Salvan,
Marius Grundmann,
Rüdiger Schmidt-Grund
Abstract:
Co$_3$O$_4$, ZnFe$_2$O$_4$, CoFe$_2$O$_4$, ZnCo$_2$O$_4$, and Fe$_3$O$_4$ thin films were fabricated by pulsed laser deposition at high and low temperatures resulting in crystalline single-phase normal, inverse, as well as disordered spinel oxide thin films with smooth surface morphology. The dielectric function, determined by spectroscopic ellipsometry in a wide spectral range from 0.5 eV to 8.5…
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Co$_3$O$_4$, ZnFe$_2$O$_4$, CoFe$_2$O$_4$, ZnCo$_2$O$_4$, and Fe$_3$O$_4$ thin films were fabricated by pulsed laser deposition at high and low temperatures resulting in crystalline single-phase normal, inverse, as well as disordered spinel oxide thin films with smooth surface morphology. The dielectric function, determined by spectroscopic ellipsometry in a wide spectral range from 0.5 eV to 8.5 eV, is compared with the magneto-optical response of the dielectric tensor, investigated by magneto-optical Kerr effect (MOKE) spectroscopy in the spectral range from 1.7 eV to 5.5 eV with an applied magnetic field of 1.7 T. Crystal field, inter-valence and inter-sublattice charge transfer transitions, and transitions from O$_{2p}$ to metal cation 3d or 4s bands are identified in both the principal diagonal elements and the magneto-optically active off-diagonal elements of the dielectric tensor. Depending on the degree of cation disorder, resulting in local symmetry distortion, the magneto-optical response is found to be strongest for high crystal quality inverse spinels and for disordered normal spinel structure, contrary to the first principle studies of CoFe$_2$O$_4$ and ZnFe$_2$O$_4$. The results presented provide a basis for deeper understanding of light-matter interaction in this material system that is of vital importance for device-related phenomena and engineering.
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Submitted 1 October, 2015; v1 submitted 29 April, 2015;
originally announced May 2015.
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Carbon p Electron Ferromagnetism in Silicon Carbide
Authors:
Y. Wang,
Y. Liu,
G. Wang,
W. Anwand,
C. Jenkins,
E. Arenholz,
F. Munnik,
O. Gordan,
G. Salvan,
D. R. T. Zahn,
X. Chen,
S. Gemming,
M. Helm,
S. Zhou
Abstract:
Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relation between the defects and the resulting ferromagnetism. Here, we contribute to revealing the origin of defect-induced ferromagnetism using SiC as a prototypical example. We show that the long-range ferromagnetic coupli…
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Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relation between the defects and the resulting ferromagnetism. Here, we contribute to revealing the origin of defect-induced ferromagnetism using SiC as a prototypical example. We show that the long-range ferromagnetic coupling can be attributed to the p electrons of the nearest-neighbor carbon atoms around the VSiVC divacancies. Thus, the ferromagnetism is traced down to its microscopic, electronic origin.
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Submitted 2 March, 2015;
originally announced March 2015.
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A comprehensive study of the magnetic, structural and transport properties of the III-V ferromagnetic semiconductor InMnP
Authors:
M. Khalid,
Kun Gao,
E. Weschke,
R. Huebner,
C. Baehtz,
O. Gordan,
G. Salvan,
D. R. T. Zahn,
W. Skorupa,
M. Helm,
Shengqiang Zhou
Abstract:
The manganese induced magnetic, electrical and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and strong spin polarization at the Fermi level. The degree of magnetization, the Curie temperature and the spin polarization depend on the Mn concentration. The brig…
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The manganese induced magnetic, electrical and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and strong spin polarization at the Fermi level. The degree of magnetization, the Curie temperature and the spin polarization depend on the Mn concentration. The bright-field transmission electron micrographs show that InP samples become almost amorphous after Mn implantation but recrystallize after pulsed laser annealing. We did not observe an insulator-metal transition in InMnP up to a Mn concentration of 5 at./%. Instead all InMnP samples show insulating characteristics up to the lowest measured temperature. Magneotresistance results obtained at low temperatures support the hopping conduction mechanism in InMnP. We find that the Mn impurity band remains detached from the valence band in InMnP up to 5 at./% Mn doping. Our findings indicate that the local environment of Mn ions in InP is similar to GaMnAs, GaMnP and InMnAs, however, the electrical properties of these Mn implanted III-V compounds are different. This is one of the consequences of the different Mn binding energy in these compounds.
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Submitted 15 January, 2015;
originally announced January 2015.
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Electronic excitations of potassium intercalated manganese phthalocyanine investigated by electron energy-loss spectroscopy
Authors:
Benjamin Mahns,
Friedrich Roth,
Mandy Grobosch,
Dietrich R. T. Zahn,
Martin Knupfer
Abstract:
The electronic excitations of manganese phthalocyanine (MnPc) films were studied as a function of potassium doping using electron energy-loss spectroscopy in transmission. Our data reveal doping induced changes in the excitation spectrum, and they provide evidence for the existence of three doped phases: K$_1$MnPc, K$_2$MnPc, and K$_4$MnPc. Furthermore, the addition of electrons first leads to a f…
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The electronic excitations of manganese phthalocyanine (MnPc) films were studied as a function of potassium doping using electron energy-loss spectroscopy in transmission. Our data reveal doping induced changes in the excitation spectrum, and they provide evidence for the existence of three doped phases: K$_1$MnPc, K$_2$MnPc, and K$_4$MnPc. Furthermore, the addition of electrons first leads to a filling of orbitals with strong Mn 3d character, a situation which also affects the magnetic moment of the molecule.
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Submitted 28 April, 2011;
originally announced April 2011.
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The Interaction between PEDOT/PSS Gate and sub-$μ$ low-k Insulator for All Printed OFETs
Authors:
Z. Shalabutov,
M. Friedrich,
I. Thurzo,
A. Hübler,
D. R. T. Zahn,
U. Hahn
Abstract:
In all printed OFETs with Poly(3,4-ethylenedioxythiophene)/ poly(styrenesulfonate) (PEDOT/ PSS) gate, offset printing and gravure of electrically dense sub-$μ$ insulators from polyvinylphenol (PVPh), polyvinyl alcohol (PVOH) and poly(methyl methacrylate) (PMMA) as well as other organic and inorganic materials turned out to be problematic due to the most reactive part of the gate material- the ne…
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In all printed OFETs with Poly(3,4-ethylenedioxythiophene)/ poly(styrenesulfonate) (PEDOT/ PSS) gate, offset printing and gravure of electrically dense sub-$μ$ insulators from polyvinylphenol (PVPh), polyvinyl alcohol (PVOH) and poly(methyl methacrylate) (PMMA) as well as other organic and inorganic materials turned out to be problematic due to the most reactive part of the gate material- the negative sulfonate ions from PSS. The present paper investigates the nature of the interaction between PSS and PVOH sub-$μ$ insulator explored by infrared spectroscopy and electrical methods. Some evidence is obtained that most probably OH- and not sulfonate ions are responsible for creating channels, penetrated by PEDOT/PSS nano dispersion applied as gate.
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Submitted 15 November, 2004;
originally announced November 2004.
