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Data-driven study of the enthalpy of mixing in the liquid phase
Authors:
Guillaume Deffrennes,
Bengt Hallstedt,
Taichi Abe,
Quentin Bizot,
Evelyne Fischer,
Jean-Marc Joubert,
Kei Terayama,
Ryo Tamura
Abstract:
The enthalpy of mixing in the liquid phase is a thermodynamic property reflecting interactions between elements that is key to predict phase transformations. Widely used models exist to predict it, but they have never been systematically evaluated. To address this, we collect a large amount of enthalpy of mixing data in binary liquids from a review of about 1000 thermodynamic evaluations. This all…
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The enthalpy of mixing in the liquid phase is a thermodynamic property reflecting interactions between elements that is key to predict phase transformations. Widely used models exist to predict it, but they have never been systematically evaluated. To address this, we collect a large amount of enthalpy of mixing data in binary liquids from a review of about 1000 thermodynamic evaluations. This allows us to clarify the prediction accuracy of Miedema's model which is state-of-the-art. We show that more accurate predictions can be obtained from a machine learning model based on LightGBM, and we provide them in 2415 binary systems. The data we collect also allows us to evaluate another empirical model to predict the excess heat capacity that we apply to 2211 binary liquids. We then extend the data collection to ternary metallic liquids and find that, when mixing is exothermic, extrapolations from the binary systems by Muggianu's model systematically lead to slight overestimations of roughly 10% close to the equimolar composition. Therefore, our LightGBM model can provide reasonable estimates for ternary alloys and, by extension, for multicomponent alloys. Our findings extracted from rich datasets can be used to feed thermodynamic, empirical and machine learning models for material development.
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Submitted 16 June, 2024;
originally announced June 2024.
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Microwave dependent quantum transport characteristics in GaN/AlGaN FETs
Authors:
Motoya Shinozaki,
Takaya Abe,
Kazuma Matsumura,
Takumi Aizawa,
Takashi Kumasaka,
Tomohiro Otsuka
Abstract:
Defects in semiconductors, traditionally seen as detrimental to electronic device performance, have emerged as potential assets in quantum technologies due to their unique quantum properties. This study investigates the interaction between defects and quantum electron transport in GaN/AlGaN field-effect transistors, highlighting the observation of Fano resonances at low temperatures. We observe th…
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Defects in semiconductors, traditionally seen as detrimental to electronic device performance, have emerged as potential assets in quantum technologies due to their unique quantum properties. This study investigates the interaction between defects and quantum electron transport in GaN/AlGaN field-effect transistors, highlighting the observation of Fano resonances at low temperatures. We observe the resonance spectra and their dependence on gate voltage and magnetic fields. To explain the observed behavior, we construct the possible scenario as a Fano interferometer with finite width. Our findings reveal the potential of semiconductor defects to contribute to the development of quantum information processing, providing their role to key components in next-generation quantum devices.
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Submitted 17 April, 2024;
originally announced April 2024.
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Channel length dependence of the formation of quantum dots in GaN/AlGaN FETs
Authors:
Kazuma Matsumura,
Takaya Abe,
Takahito Kitada,
Takeshi Kumasaka,
Norikazu Ito,
Taketoshi Tanaka,
Ken Nakahara,
Tomohiro Otsuka
Abstract:
Quantum dots can be formed in simple GaN/AlGaN field-effect-transistors (FETs) by disordered potential induced by impurities and defects. Here, we investigate the channel length dependence of the formation of quantum dots. We observe decrease of the number of formed quantum dots with decrease of the FET channel length. A few quantum dots are formed in the case with the gate length of 0.05~$μ$m and…
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Quantum dots can be formed in simple GaN/AlGaN field-effect-transistors (FETs) by disordered potential induced by impurities and defects. Here, we investigate the channel length dependence of the formation of quantum dots. We observe decrease of the number of formed quantum dots with decrease of the FET channel length. A few quantum dots are formed in the case with the gate length of 0.05~$μ$m and we evaluate the dot parameters and the disordered potential. We also investigate the effects of a thermal cycle and illumination of light, and reveal the change of the disordered potential.
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Submitted 13 April, 2023;
originally announced April 2023.
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A machine learning-based classification approach for phase diagram prediction
Authors:
Guillaume Deffrennes,
Kei Terayama,
Taichi Abe,
Ryo Tamura
Abstract:
Knowledge of phase diagrams is essential for material design as it helps in understanding microstructure evolution during processing. The determination of phase diagrams is thus one of the central tasks in materials science. When exploring new materials for which the phase diagram is unknown, experimentalists often try to determine the key experiments that should be performed by referencing known…
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Knowledge of phase diagrams is essential for material design as it helps in understanding microstructure evolution during processing. The determination of phase diagrams is thus one of the central tasks in materials science. When exploring new materials for which the phase diagram is unknown, experimentalists often try to determine the key experiments that should be performed by referencing known phase diagrams of similar systems. To enhance this practical strategy, we attempted to estimate unknown phase diagrams based on known phase diagrams using a machine learning-based classification approach. As a proof of concept, we focused on predicting the number of coexisting phases across the 800 K isothermal section of each of the 10 ternaries of the Al-Cu-Mg-Si-Zn system from the other 9 sections. To increase the prediction accuracy, we introduced new descriptors generated from the thermodynamic properties of the elements and CALPHAD extrapolations from lower-order systems. Using the random forest method, the presence of single-, two-, and three-phase domains was predicted with an average accuracy of 84% across all 10 considered sections with a standard deviation of 11%. The proposed approach represents a promising tool for assisting the investigator in developing new materials and determining phase equilibria efficiently.
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Submitted 6 March, 2022; v1 submitted 6 January, 2022;
originally announced January 2022.
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Ferroelectricity of Dion-Jacobson layered perovskites CsNdNb$_2$O$_7$ and RbNdNb$_2$O$_7$
Authors:
Sota Asaki,
Hirofumi Akamatsu,
George Hasegawa,
Tomohiro Abe,
Yuki Nakahira,
Suguru Yoshida,
Chikako Moriyoshi,
Katsuro Hayashi
Abstract:
Crystallography and dielectric properties in Dion-Jacobson layered perovskites, CsNdNb$_2$O$_7$ and RbNdNb$_2$O$_7$, have been examined in dense polycrystalline samples, and polarization hysteresis loops that substantiate ferroelectricity have been observed at room temperature. The theoretical mechanism for the spontaneous polarization, "hybrid improper ferroelectric mechanism,'' induced by a comb…
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Crystallography and dielectric properties in Dion-Jacobson layered perovskites, CsNdNb$_2$O$_7$ and RbNdNb$_2$O$_7$, have been examined in dense polycrystalline samples, and polarization hysteresis loops that substantiate ferroelectricity have been observed at room temperature. The theoretical mechanism for the spontaneous polarization, "hybrid improper ferroelectric mechanism,'' induced by a combination of two types of non-polar octahedral rotations, is confirmed in these two phases. Our samples show remanent polarizations of 2-3 $μ$C/cm$^2$, which are much larger than those obtained in polycrystalline samples with the hybrid improper ferroelectricity reported so far. A dielectric constant in CsNdNb$_2$O$_7$ exhibits an anomaly at 625 K, corresponding to the ferroelectric transition, as previously revealed by x-ray and neutron diffractometry. No dielectric anomaly is observed for RbNdNb$_2$O$_7$ throughout the temperature range studied here ($\leq$ 773 K), which is consistent with the previous diffractometry showing the persistence of polar $I2cm$ symmetry up to 790 K.
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Submitted 18 August, 2020; v1 submitted 1 August, 2020;
originally announced August 2020.
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Formation of quantum dots in GaN/AlGaN FETs
Authors:
Tomohiro Otsuka,
Takaya Abe,
Takahito Kitada,
Norikazu Ito,
Taketoshi Tanaka,
Ken Nakahara
Abstract:
GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation of quantum dots in the conduction channel near the depletion of the 2-dimensional electron gas (2DEG). Multiple quantum dots are formed in the disordered potenti…
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GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation of quantum dots in the conduction channel near the depletion of the 2-dimensional electron gas (2DEG). Multiple quantum dots are formed in the disordered potential induced by impurities in the FET conduction channel. We also measure the gate insulator dependence of the transport properties. These results can be utilized for the development of quantum dot devices utilizing GaN/AlGaN heterostructures and evaluation of the impurities in GaN/AlGaN FET channels.
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Submitted 18 May, 2020; v1 submitted 9 February, 2020;
originally announced February 2020.
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Improvement of superconducting properties by high mixing entropy at blocking layers in BiS2-based superconductor REO0.5F0.5BiS2
Authors:
Ryota Sogabe,
Yosuke Goto,
Tomohiro Abe,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Akira Miura,
Kiyoharu Tadanaga,
Yoshikazu Mizuguchi
Abstract:
To investigate the interlayer interaction in the recently synthesized high-entropy-alloy-type (HEA-type) REO0.5F0.5BiS2 superconductors (RE: rare earth), we have systematically synthesized samples with close lattice parameters and different mixing entropy (DSmix) for the RE site. The crystal structure was investigated using synchrotron X-ray diffraction and Rietveld refinement. For the examined sa…
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To investigate the interlayer interaction in the recently synthesized high-entropy-alloy-type (HEA-type) REO0.5F0.5BiS2 superconductors (RE: rare earth), we have systematically synthesized samples with close lattice parameters and different mixing entropy (DSmix) for the RE site. The crystal structure was investigated using synchrotron X-ray diffraction and Rietveld refinement. For the examined samples with different DSmix, the increase in DSmix does not largely affect the bond lengths and the bond angle of the BiS2 conducting layer but clearly suppresses the in-plane disorder at the in-plane S1 site, which is the parameter essential for the emergence of bulk superconductivity in the REO0.5F0.5BiS2 system. Bulk nature of superconductivity is enhanced by the increase in DSmix for the present samples. The results of this work clearly show that the increase in mixing entropy at the blocking layer can positively affect the emergence of bulk superconductivity in the conducting layer, which is the evidence of the interaction between the high entropy states of the blocking layers and the physical properties of the conducting layers.
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Submitted 14 March, 2019; v1 submitted 13 August, 2018;
originally announced August 2018.
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Synthesis, Crystal Structure, and Physical Properties of New Layered Oxychalcogenide La2O2Bi3AgS6
Authors:
Yudai Hijikata,
Tomohiro Abe,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Yosuke Goto,
Akira Miura,
Kiyoharu Tadanaga,
Yongming Wang,
Osuke Miura,
Yoshikazu Mizuguchi
Abstract:
We have synthesized a new layered oxychalcogenide La2O2Bi3AgS6. From synchrotron X-ray diffraction and Rietveld refinement, the crystal structure of La2O2Bi3AgS6 was refined using a model of the P4/nmm space group with a = 4.0644(1) Å and c = 19.412(1) Å, which is similar to the related compound LaOBiPbS3, while the interlayer bonds (M2-S1 bonds) are apparently shorter in La2O2Bi3AgS6. The tunneli…
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We have synthesized a new layered oxychalcogenide La2O2Bi3AgS6. From synchrotron X-ray diffraction and Rietveld refinement, the crystal structure of La2O2Bi3AgS6 was refined using a model of the P4/nmm space group with a = 4.0644(1) Å and c = 19.412(1) Å, which is similar to the related compound LaOBiPbS3, while the interlayer bonds (M2-S1 bonds) are apparently shorter in La2O2Bi3AgS6. The tunneling electron microscopy (TEM) image confirmed the lattice constant derived from Rietveld refinement (c ~ 20 Å). The electrical resistivity and Seebeck coefficient suggested that the electronic states of La2O2Bi3AgS6 are more metallic than those of LaOBiS2 and LaOBiPbS3. The insertion of a rock-salt-type chalcogenide into the van der Waals gap of BiS2-based layered compounds, such as LaOBiS2, will be a useful strategy for designing new layered functional materials in the layered chalcogenide family.
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Submitted 18 December, 2017;
originally announced December 2017.
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Crystal structure, site selectivity, and electronic structure of layered chalcogenide LaOBiPbS3
Authors:
Y. Mizuguchi,
Y. Hijikata,
T. Abe,
C. Moriyoshi,
Y. Kuroiwa,
Y. Goto,
A. Miura,
S. Lee,
S. Torii,
T. Kamiyama,
C. H. Lee,
M. Ochi,
K. Kuroki
Abstract:
We have investigated the crystal structure of LaOBiPbS3 using neutron diffraction and synchrotron X-ray diffraction. From structural refinements, we found that the two metal sites, occupied by Bi and Pb, were differently surrounded by the sulfur atoms. Calculated bond valence sum suggested that one metal site was nearly trivalent and the other was nearly divalent. Neutron diffraction also revealed…
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We have investigated the crystal structure of LaOBiPbS3 using neutron diffraction and synchrotron X-ray diffraction. From structural refinements, we found that the two metal sites, occupied by Bi and Pb, were differently surrounded by the sulfur atoms. Calculated bond valence sum suggested that one metal site was nearly trivalent and the other was nearly divalent. Neutron diffraction also revealed site selectivity of Bi and Pb in the LaOBiPbS3 structure. These results suggested that the crystal structure of LaOBiPbS3 can be regarded as alternate stacks of the rock-salt-type Pb-rich sulfide layers and the LaOBiS2-type Bi-rich layers. From band calculations for an ideal (LaOBiS2)(PbS) system, we found that the S bands of the PbS layer were hybridized with the Bi bands of the BiS plane at around the Fermi energy, which resulted in the electronic characteristics different from that of LaOBiS2. Stacking the rock-salt type sulfide (chalcogenide) layers and the BiS2-based layered structure could be a new strategy to exploration of new BiS2-based layered compounds, exotic two-dimensional electronic states, or novel functionality.
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Submitted 12 August, 2017;
originally announced August 2017.
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Aging-induced complex transformation behavior of martensite in Ni57.5Mn17.5Ga25 shape memory alloy
Authors:
V. V. Khovailo,
R. Kainuma,
T. Abe,
K. Oikawa,
T. Takagi
Abstract:
Ni57.5Mn17.5Ga25 shape memory alloy exhibits a complex transformation behavior, appearing after aging. Aging in the austenitic state resulted in an ordinary decrease of the martensitic transformation temperature. Contrary to this, aging in the martensitic state brought about unusual features of the martensitic transformation observed so far only in Ni-Ti alloys.
Ni57.5Mn17.5Ga25 shape memory alloy exhibits a complex transformation behavior, appearing after aging. Aging in the austenitic state resulted in an ordinary decrease of the martensitic transformation temperature. Contrary to this, aging in the martensitic state brought about unusual features of the martensitic transformation observed so far only in Ni-Ti alloys.
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Submitted 29 April, 2004;
originally announced April 2004.
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Influence of intermartensitic transitions on transport properties of Ni2.16Mn0.84Ga alloy
Authors:
V. V. Khovailo,
K. Oikawa,
C. Wedel,
T. Takagi,
T. Abe,
K. Sugiyama
Abstract:
Magnetic, transport, and x-ray diffraction measurements of ferromagnetic shape memory alloy Ni$_{2.16}$Mn$_{0.84}$Ga revealed that this alloy undergoes an intermartensitic transition upon cooling, whereas no such a transition is observed upon subsequent heating. The difference in the modulation of the martensite forming upon cooling from the high-temperature austenitic state [5-layered (5M) mart…
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Magnetic, transport, and x-ray diffraction measurements of ferromagnetic shape memory alloy Ni$_{2.16}$Mn$_{0.84}$Ga revealed that this alloy undergoes an intermartensitic transition upon cooling, whereas no such a transition is observed upon subsequent heating. The difference in the modulation of the martensite forming upon cooling from the high-temperature austenitic state [5-layered (5M) martensite], and the martensite forming upon the intermartensitic transition [7-layered (7M) martensite] strongly affects the magnetic and transport properties of the alloy and results in a large thermal hysteresis of the resistivity $ρ$ and magnetization $M$. The intermartensitic transition has an especially marked influence on the transport properties, as is evident from a large difference in the resistivity of the 5M and 7M martensite, $(ρ_{\mathrm{5M}} - ρ_{\mathrm{7M}})/ρ_{\mathrm{5M}} \approx 15%$, which is larger than the jump of resistivity at the martensitic transition from the cubic austenitic phase to the monoclinic 5M martensitic phase. We assume that this significant difference in $ρ$ between the martensitic phases is accounted for by nesting features of the Fermi surface. It is also suggested that the nesting hypothesis can explain the uncommon behavior of the resistivity at the martensitic transition, observed in stoichiometric and near-stoichiometric Ni-Mn-Ga alloys.
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Submitted 19 March, 2004;
originally announced March 2004.
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Influence of Fe and Co on Phase Transitions in Ni-Mn-Ga Alloys
Authors:
V. V. Khovailo,
T. Abe,
V. V. Koledov,
M. Matsumoto,
H. Nakamura,
R. Note,
M. Ohtsuka,
V. G. Shavrov,
T. Takagi
Abstract:
Differential scanning calorimetry (DSC) and magnetic measurements were performed to study the influence of ferromagnetic 3-d transition elements Fe and Co on structural and magnetic properties of ferromagnetic shape memory alloys Ni2MnGa. Addition of Fe or Co on the Ni sites decreases the temperature of martensitic phase transition Tm, whereas addition of Co on the Mn sites results in a consider…
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Differential scanning calorimetry (DSC) and magnetic measurements were performed to study the influence of ferromagnetic 3-d transition elements Fe and Co on structural and magnetic properties of ferromagnetic shape memory alloys Ni2MnGa. Addition of Fe or Co on the Ni sites decreases the temperature of martensitic phase transition Tm, whereas addition of Co on the Mn sites results in a considerable increase of Tm. Magnetic measurement revealed that Curie temperature TC increases upon substitution of Fe or Co for Ni. This observation is of importance for design of high temperature ferromagnetic shape memory alloys.
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Submitted 24 December, 2003;
originally announced December 2003.
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An efficient control of Curie temperature $T_C$ in Ni-Mn-Ga alloys
Authors:
V. V. Khovailo,
V. A. Chernenko,
A. A. Cherechukin,
T. Takagi,
T. Abe
Abstract:
We have studied the influence of alloying with a fourth element on the temperature of ferromagnetic ordering $T_C$ in Ni-Mn-Ga Heusler alloys. It is found that $T_C$ increases or decreases, depending on the substitution. The increase of $T_C$ is observed when Ni is substituted by either Fe or Co. On the contrary, the substitution of Mn for V or Ga for In strongly reduces $T_C$.
We have studied the influence of alloying with a fourth element on the temperature of ferromagnetic ordering $T_C$ in Ni-Mn-Ga Heusler alloys. It is found that $T_C$ increases or decreases, depending on the substitution. The increase of $T_C$ is observed when Ni is substituted by either Fe or Co. On the contrary, the substitution of Mn for V or Ga for In strongly reduces $T_C$.
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Submitted 11 September, 2003;
originally announced September 2003.
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Detection of weak-order phase transitions in ferromagnets by ac resistometry
Authors:
V. V. Khovailo,
T. Abe,
T. Takagi
Abstract:
It is shown that ac resistometry can serve as an effective tool for the detection of phase transitions, such as spin reorientation or premartensitic phase transitions, which generally are not disclosed by dc resistivity measurement. Measurement of temperature dependence of impedance, $Z(T)$, allows one to unmask the anomaly, corresponding to a weak-order phase transition. The appearance of such…
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It is shown that ac resistometry can serve as an effective tool for the detection of phase transitions, such as spin reorientation or premartensitic phase transitions, which generally are not disclosed by dc resistivity measurement. Measurement of temperature dependence of impedance, $Z(T)$, allows one to unmask the anomaly, corresponding to a weak-order phase transition. The appearance of such an anomaly is accounted for by a change in the effective permeability $μ$ of a sample upon the phase transition. Moreover, frequency dependence of $μ$ makes it possible to use the frequency of the applied ac current as an adjusting parameter in order to make this anomaly more pronounced. The applicability of this method is tested for the rare earth Gd and Heusler alloy Ni$_2$MnGa.
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Submitted 4 July, 2003;
originally announced July 2003.
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Two-way shape memory effect and mechanical properties of Pulse Discharge Sintered Ni2.18Mn0.82Ga
Authors:
T. Takagi,
V. Khovailo,
T. Nagatomo,
M. Matsumoto,
M. Ohtsuka,
T. Abe,
H. Miki
Abstract:
Mechanical and shape memory properties of a polycrystalline Ni2.18Mn0.82Ga alloy prepared by a PDS (Pulse Discharge Sintering) method were investigated. It was found that the material demonstrates the two-way shape memory effect after a loading - unloading cycle performed in the martensitic state, i. e. essentially without special training. The samples exhibiting the two-way shape memory effect…
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Mechanical and shape memory properties of a polycrystalline Ni2.18Mn0.82Ga alloy prepared by a PDS (Pulse Discharge Sintering) method were investigated. It was found that the material demonstrates the two-way shape memory effect after a loading - unloading cycle performed in the martensitic state, i. e. essentially without special training. The samples exhibiting the two-way shape memory effect show a significant enhancement in the magnitude of magnetic-field-induced strain.
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Submitted 7 May, 2003;
originally announced May 2003.
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Entropy change at the martensitic transformation in ferromagnetic shape memory alloys Ni_{2+x}Mn_{1-x}Ga
Authors:
V. V. Khovailo,
K. Oikawa,
T. Abe,
T. Takagi
Abstract:
The entropy change $ΔS$ between the high-temperature cubic phase and the low-temperature tetragonally-based martensitic phase of Ni$_{2+x}$Mn$_{1-x}$Ga ($x = 0 - 0.20$) alloys was studied. The experimental results obtained indicate that $ΔS$ in the Ni$_{2+x}$Mn$_{1-x}$Ga alloys increases with the Ni excess $x$. The increase of $ΔS$ is presumably accounted for by an increase of magnetic contribut…
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The entropy change $ΔS$ between the high-temperature cubic phase and the low-temperature tetragonally-based martensitic phase of Ni$_{2+x}$Mn$_{1-x}$Ga ($x = 0 - 0.20$) alloys was studied. The experimental results obtained indicate that $ΔS$ in the Ni$_{2+x}$Mn$_{1-x}$Ga alloys increases with the Ni excess $x$. The increase of $ΔS$ is presumably accounted for by an increase of magnetic contribution to the entropy change. It is suggested that the change in modulation of the martensitic phase of Ni$_{2+x}$Mn$_{1-x}$Ga results in discontinuity of the composition dependence of $ΔS$.
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Submitted 18 February, 2003;
originally announced February 2003.
