Showing 1–19 of 19 results for author: Ager, J W

Elucidating the Mechanism of Large Phosphate Molecule Intercalation Through Graphene Heterointerfaces

Authors: Jiayun Liang, Ke Ma, Xiao Zhao, Guanyu Lu, Jake V. Riffle, Carmen Andrei, Chengye Dong, Turker Furkan, Siavash Rajabpour, Rajiv Ramanujam Prabhakar, Joshua A. Robinson, Magdaleno R. Vasquez Jr., Quang Thang Trinh, Joel W. Ager, Miquel Salmeron, Shaul Aloni, Joshua D. Caldwell, Shawna M. Hollen, Hans A. Bechtel, Nabil Bassim, Matthew P. Sherburne, Zakaria Y. Al Balushi

Abstract: Intercalation is a process of inserting chemical species into the heterointerfaces of two-dimensional (2D) layered materials. While much research has focused on intercalating metals and small gas molecules into graphene, the intercalation of larger molecules through the basal plane of graphene remains highly unexplored. In this work, we present a new mechanism for intercalating large molecules thr… ▽ More Intercalation is a process of inserting chemical species into the heterointerfaces of two-dimensional (2D) layered materials. While much research has focused on intercalating metals and small gas molecules into graphene, the intercalation of larger molecules through the basal plane of graphene remains highly unexplored. In this work, we present a new mechanism for intercalating large molecules through monolayer graphene to form confined oxide materials at the graphene-substrate heterointerface. We investigate the intercalation of phosphorus pentoxide (P2O5) molecules directly from the vapor phase and confirm the formation of confined P2O5 at the graphene heterointerface using various techniques. Density functional theory (DFT) corroborate the experimental results and reveal the intercalation mechanism, whereby P2O5 dissociates into small fragments catalyzed by defects in the graphene that then permeates through lattice defects and reacts at the heterointerface to form P2O5. This process can also be used to form new confined metal phosphates (e.g., 2D InPO4). While the focus of this study is on P2O5 intercalation, the possibility of intercalation from pre-dissociated molecules catalyzed by defects in graphene may exist for other types of molecules as well. This study is a significant milestone in advancing our understanding of intercalation routes of large molecules via the basal plane of graphene, as well as heterointerface chemical reactions leading to the formation of distinctive confined complex oxide compounds. △ Less

Submitted 4 April, 2023; originally announced April 2023.

Possible Origin of Preformed Hole Pairs and Superconductivity in Cuprates

Authors: Shu Wang, Joel W. Ager, Wladek Walukiewicz

Abstract: This paper addresses the long standing and controversial issue of the origin of superconductivity in cuprates. Their superconductivity can be attributed to amphoteric defects associated with vacancy sites in copper oxide planes. A local defect lattice relaxation results in a negative-$U$ energy binding two holes on amphoteric defects in the donor configuration that act as preformed boson pair. The… ▽ More This paper addresses the long standing and controversial issue of the origin of superconductivity in cuprates. Their superconductivity can be attributed to amphoteric defects associated with vacancy sites in copper oxide planes. A local defect lattice relaxation results in a negative-$U$ energy binding two holes on amphoteric defects in the donor configuration that act as preformed boson pair. Thermodynamic equilibrium between defects in the donor and acceptor configurations stabilizes Fermi energy at the amphoteric defect charge transition state assuring resonant coupling between free holes and the localized hole pairs. Model calculations show that the critical temperature is primarily determined by the density of the amphoteric defects in the donor configuration, explaining the ubiquity of dome-like dependence of the critical temperature on the doping as well as its universal dependence on the superfluid density. Intentional doping with chemical acceptors or donors is neither necessary nor sufficient condition for superconductivity that is fully determined by the amphoteric defects whose concentration can be controlled by crystal nonstoichiometry. The only role of chemical doping is changing the balance between concentrations of amphoteric defects in the donor and acceptor configurations resulting in an increase of the superfluid density and thus also the critical temperature for acceptor and a decrease for donor doping. This accounts for the experimentally observed distinct asymmetry between the dome structures for the chemical doping with acceptors and donors. The unusual sensitivity of the critical temperature to external perturbations is explained by the resonant nature of the coupling between free holes and preformed hole pairs. The work has broader implications as it could be applicable to other superconductors with dome-like dependence of the critical temperature on doping. △ Less

Submitted 8 February, 2022; originally announced February 2022.

Charge Carrier Transport in Iron Pyrite Thin Films: Disorder Induced Variable Range Hopping

Authors: Sudhanshu Shukla, Sinu Mathew, Hwan Sung Choe, Manjusha Chugh, Thomas D. Kuhne, Hossein Mirhosseini, Xiong Qihua, Junqiao Wu, Thirumalai Venkatesan, Thirumany Sritharan, Joel W. Ager

Abstract: The origin of p-type conductivity and the mechanism responsible for low carrier mobility was investigated in pyrite (FeS2) thin films. Temperature dependent resistivity measurements were performed on polycrystalline and nanostructured thin films prepared by three different methods. Films have a high hole density and low mobility regardless of the method used for their preparation. The charge trans… ▽ More The origin of p-type conductivity and the mechanism responsible for low carrier mobility was investigated in pyrite (FeS2) thin films. Temperature dependent resistivity measurements were performed on polycrystalline and nanostructured thin films prepared by three different methods. Films have a high hole density and low mobility regardless of the method used for their preparation. The charge transport mechanism is determined to be nearest neighbour hopping (NNH) at near room temperature with Mott-type variable range hopping (VRH) of holes via localized states occurring at lower temperatures. Density functional theory (DFT) predicts that sulfur vacancy induced localized defect states will be situated within the band gap with the charge remaining localized around the defect. The data indicate that the electronic properties including hopping transport in pyrite thin films can be correlated to sulfur vacancy related defect. The results provide insights on electronic properties of pyrite thin films and its implications for charge transport △ Less

Submitted 20 June, 2021; v1 submitted 15 June, 2021; originally announced June 2021.

Comments: 22 pages, 7 Figures, Supplementary Information

The Bright Side and the Dark Side of Hybrid Organic Inorganic Perovskites

Authors: Wladek Walukiewicz, Shu Wang, Xinchun Wu, Rundong Li, Matthew P. Sherburne, Bo Wu, Tze Chien Sun, Joel W. Ager, Mark D. Asta

Abstract: The previously developed bistable amphoteric native defect (BAND) model is used for a comprehensive explanation of the unique photophysical properties and for understanding the remarkable performance of perovskites as photovoltaic materials. It is shown that the amphoteric defects in donor (acceptor) configuration capture a fraction of photoexcited electrons (holes) dividing them into two groups:… ▽ More The previously developed bistable amphoteric native defect (BAND) model is used for a comprehensive explanation of the unique photophysical properties and for understanding the remarkable performance of perovskites as photovoltaic materials. It is shown that the amphoteric defects in donor (acceptor) configuration capture a fraction of photoexcited electrons (holes) dividing them into two groups: higher energy bright and lower energy dark electrons (holes). The spatial separation of the dark electrons and the dark holes and the k-space separation of the bright and the dark charge carriers reduce electron hole recombination rates, emulating the properties of an ideal photovoltaic material with a balanced, spatially separated transport of electrons and holes. The BAND model also offers a straightforward explanation for the exceptional insensitivity of the photovoltaic performance of polycrystalline perovskite films to structural and optical inhomogeneities. The blue-shifted radiative recombination of bright electrons and holes results in a large anti-Stokes effect that provides a quantitative explanation for the spectral dependence of the laser cooling effect measured in perovskite platelets. △ Less

Submitted 22 October, 2020; originally announced October 2020.

Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors

Authors: Der-Hsien Lien, Shiekh Zia Uddin, Matthew Yeh, Matin Amani, Hyungjin Kim, Joel W. Ager III, Eli Yablonovitch, Ali Javey

Abstract: Defects in conventional semiconductors substantially lower the photoluminescence (PL) quantum yield (QY), a key metric of optoelectronic performance that directly dictates the maximum device efficiency. Two-dimensional (2D) transition metal dichalcogenides (TMDCs), such as monolayer MoS2, often exhibit low PL QY for as-processed samples, which has typically been attributed to a large native defect… ▽ More Defects in conventional semiconductors substantially lower the photoluminescence (PL) quantum yield (QY), a key metric of optoelectronic performance that directly dictates the maximum device efficiency. Two-dimensional (2D) transition metal dichalcogenides (TMDCs), such as monolayer MoS2, often exhibit low PL QY for as-processed samples, which has typically been attributed to a large native defect density. We show that the PL QY of as-processed MoS2 and WS2 monolayers reaches near-unity when they are made intrinsic by electrostatic doping, without any chemical passivation. Surprisingly, neutral exciton recombination is entirely radiative even in the presence of a high native defect density. This finding enables TMDC monolayers for optoelectronic device applications as the stringent requirement of low defect density is eased. △ Less

Submitted 8 May, 2019; originally announced May 2019.

Dynamical decoupling of interacting dipolar spin ensembles

Authors: Evan S. Petersen, A. M. Tyryshkin, K. M. Itoh, Joel W. Ager, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl, M. L. W. Thewalt, S. A. Lyon

Abstract: We demonstrate that CPMG and XYXY decoupling sequences with non-ideal $πぱい$ pulses can reduce dipolar interactions between spins of the same species in solids. Our simulations of pulsed electron spin resonance (ESR) experiments show that $πぱい$ rotations with small ($<$~10\%) imperfections refocus instantaneous diffusion. Here, the intractable N-body problem of interacting dipoles is approximated by th… ▽ More We demonstrate that CPMG and XYXY decoupling sequences with non-ideal $πぱい$ pulses can reduce dipolar interactions between spins of the same species in solids. Our simulations of pulsed electron spin resonance (ESR) experiments show that $πぱい$ rotations with small ($<$~10\%) imperfections refocus instantaneous diffusion. Here, the intractable N-body problem of interacting dipoles is approximated by the average evolution of a single spin in a changing mean field. These calculations agree well with experiments and do not require powerful hardware. Our results add to past attempts to explain similar phenomena in solid state nuclear magnetic resonance (NMR). Although the fundamental physics of NMR are similar to ESR, the larger linewidths in ESR and stronger dipolar interactions between electron spins compared to nuclear spins preclude drawing conclusions from NMR studies alone. For bulk spins, we also find that using XYXY results in less inflation of the deduced echo decay times as compared to decays obtained with CPMG. △ Less

Submitted 13 July, 2018; originally announced July 2018.

Comments: 10 pages, 5 figures

Pressure-Temperature Phase Diagram of Vanadium Dioxide

Authors: Yabin Chen, Shuai Zhang, Feng Ke, Changhyun Ko, Sangwook Lee, Kai Liu, Bin Chen, Joel W. Ager, Raymond Jeanloz, Volker Eyert, Junqiao Wu

Abstract: The complexity of strongly correlated electron physics in vanadium dioxide is exemplified as its rich phase diagrams of all kinds, which in turn shed light on the mechanisms behind its various phase transitions. In this work, we map out the hydrostatic pressure - temperature phase diagram of vanadium dioxide nanobeams by independently varying pressure and temperature with a diamond anvil cell. In… ▽ More The complexity of strongly correlated electron physics in vanadium dioxide is exemplified as its rich phase diagrams of all kinds, which in turn shed light on the mechanisms behind its various phase transitions. In this work, we map out the hydrostatic pressure - temperature phase diagram of vanadium dioxide nanobeams by independently varying pressure and temperature with a diamond anvil cell. In addition to the well-known insulating M1 (monoclinic) and metallic R (tetragonal) phases, the diagram identifies the existence at high pressures of the insulating M1' (monoclinic, more conductive than M1) phase, and two metallic phases of X (monoclinic) and O (orthorhombic, at high temperature only). Systematic optical and electrical measurements combined with density functional calculations allow us to delineate their phase boundaries as well as reveal some basic features of the transitions. △ Less

Submitted 7 March, 2017; originally announced March 2017.

Comments: 9 pages, 4 figures

Pressurizing Field-Effect Transistors of Few-Layer MoS2 in a Diamond Anvil Cell

Authors: Yabin Chen, Feng Ke, Penghong Ci, Changhyun Ko, Taegyun Park, Sahar Saremi, Huili Liu, Yeonbae Lee, Joonki Suh, Lane W. Martin, Joel W. Ager, Bin Chen, Junqiao Wu

Abstract: Hydrostatic pressure applied using diamond anvil cells (DAC) has been widely explored to modulate physical properties of materials by tuning their lattice degree of freedom. Independently, electrical field is able to tune the electronic degree of freedom of functional materials via, for example, the field-effect transistor (FET) configuration. Combining these two orthogonal approaches would allow… ▽ More Hydrostatic pressure applied using diamond anvil cells (DAC) has been widely explored to modulate physical properties of materials by tuning their lattice degree of freedom. Independently, electrical field is able to tune the electronic degree of freedom of functional materials via, for example, the field-effect transistor (FET) configuration. Combining these two orthogonal approaches would allow discovery of new physical properties and phases going beyond the known phase space. Such experiments are, however, technically challenging and have not been demonstrated. Herein, we report a feasible strategy to prepare and measure FETs in a DAC by lithographically patterning the nanodevices onto the diamond culet. Multiple-terminal FETs were fabricated in the DAC using few-layer MoS2 and BN as the channel semiconductor and dielectric layer, respectively. It is found that the mobility, conductance, carrier concentration, and contact conductance of MoS2 can all be significantly enhanced with pressure. We expect that the approach could enable unprecedented ways to explore new phases and properties of materials under coupled mechano-electrostatic modulation. △ Less

Submitted 2 October, 2016; originally announced October 2016.

Comments: 15 pages, 5 figures

Compliant substrate epitaxy: Au on MoS$_2$

Authors: Yuzhi Zhou, Daisuke Kiriya, Eugene E. Haller, Joel W. Ager III, Ali Javey, Daryl C. Chrzan

Abstract: The epitaxial growth of {111} oriented Au on MoS$_2$ is well documented despite the large lattice mismatch (~8% biaxial strain), and the fact that a Au {001} orientation results in much less elastic strain. An analysis based on density functional and linear elasticity theories reveals that the {111} orientation is stabilized by a combination of favorable surface and interfacial contributions to th… ▽ More The epitaxial growth of {111} oriented Au on MoS$_2$ is well documented despite the large lattice mismatch (~8% biaxial strain), and the fact that a Au {001} orientation results in much less elastic strain. An analysis based on density functional and linear elasticity theories reveals that the {111} orientation is stabilized by a combination of favorable surface and interfacial contributions to the energy, and the compliance of the first layer of the MoS$_2$. △ Less

Submitted 5 June, 2015; v1 submitted 27 May, 2015; originally announced May 2015.

ab initio Electronic Transport Model with Explicit Solution to the Linearized Boltzmann Transport Equation

Authors: Alireza Faghaninia, Joel W. Ager III, Cynthia S. Lo

Abstract: Accurate models of carrier transport are essential for describing the electronic properties of semiconductor materials. To the best of our knowledge, the current models following the framework of the Boltzmann transport equation (BTE) either rely heavily on experimental data (i.e., semi-empirical), or utilize simplifying assumptions, such as the constant relaxation time approximation (BTE-cRTA). W… ▽ More Accurate models of carrier transport are essential for describing the electronic properties of semiconductor materials. To the best of our knowledge, the current models following the framework of the Boltzmann transport equation (BTE) either rely heavily on experimental data (i.e., semi-empirical), or utilize simplifying assumptions, such as the constant relaxation time approximation (BTE-cRTA). While these models offer valuable physical insights and accurate calculations of transport properties in some cases, they often lack sufficient accuracy -- particularly in capturing the correct trends with temperature and carrier concentration. We present here a general transport model for calculating low-field electrical drift mobility and Seebeck coefficient of n-type semiconductors, by explicitly considering all relevant physical phenomena (i.e. elastic and inelastic scattering mechanisms). We first rewrite expressions for the rates of elastic scattering mechanisms, in terms of ab initio properties, such as the band structure, density of states, and polar optical phonon frequency. We then solve the linear BTE to obtain the perturbation to the electron distribution -- resulting from the dominant scattering mechanisms -- and use this to calculate the overall mobility and Seebeck coefficient. Using our model, we accurately calculate electrical transport properties of the compound n-type semiconductors, GaAs and InN, over various ranges of temperature and carrier concentration. Our fully predictive model provides high accuracy when compared to experimental measurements on both GaAs and InN, and vastly outperforms both semi-empirical models and the BTE-cRTA. Therefore, we assert that this approach represents a first step towards a fully ab initio carrier transport model that is valid in all compound semiconductors. △ Less

Submitted 24 April, 2015; v1 submitted 21 January, 2015; originally announced January 2015.

Journal ref: Phys. Rev. B 91, 235123 (2015)

Host isotope mass effects on the hyperfine interaction of group-V donors in silicon

Authors: T. Sekiguchi, A. M. Tyryshkin, S. Tojo, E. Abe, R. Mori, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl, J. W. Ager, E. E. Haller, M. L. W. Thewalt, J. J. L. Morton, S. A. Lyon, K. M. Itoh

Abstract: The effects of host isotope mass on the hyperfine interaction of group-V donors in silicon are revealed by pulsed electron nuclear double resonance (ENDOR) spectroscopy of isotopically engineered Si single crystals. Each of the hyperfine-split P-31, As-75, Sb-121, Sb-123, and Bi-209 ENDOR lines splits further into multiple components, whose relative intensities accurately match the statistical lik… ▽ More The effects of host isotope mass on the hyperfine interaction of group-V donors in silicon are revealed by pulsed electron nuclear double resonance (ENDOR) spectroscopy of isotopically engineered Si single crystals. Each of the hyperfine-split P-31, As-75, Sb-121, Sb-123, and Bi-209 ENDOR lines splits further into multiple components, whose relative intensities accurately match the statistical likelihood of the nine possible average Si masses in the four nearest-neighbor sites due to random occupation by the three stable isotopes Si-28, Si-29, and Si-30. Further investigation with P-31 donors shows that the resolved ENDOR components shift linearly with the bulk-averaged Si mass. △ Less

Submitted 25 July, 2014; originally announced July 2014.

Comments: 5 pages, 4 figures, 1 table

Journal ref: Phys. Rev. B 90, 121203 (2014)

Radical-free dynamic nuclear polarization using electronic defects in silicon

Authors: M. C. Cassidy, C. Ramanathan, D. G. Cory, J. W. Ager, C. M. Marcus

Abstract: Direct dynamic nuclear polarization of 1H nuclei in frozen water and water-ethanol mixtures is demonstrated using silicon nanoparticles as the polarizing agent. Electron spins at dangling-bond sites near the silicon surface are identified as the source of the nuclear hyperpolarization. This novel polarization method open new avenues for the fabrication of surface engineered nanostructures to creat… ▽ More Direct dynamic nuclear polarization of 1H nuclei in frozen water and water-ethanol mixtures is demonstrated using silicon nanoparticles as the polarizing agent. Electron spins at dangling-bond sites near the silicon surface are identified as the source of the nuclear hyperpolarization. This novel polarization method open new avenues for the fabrication of surface engineered nanostructures to create high nuclear-spin polarized solutions without introducing contaminating radicals, and for the study of molecules adsorbed onto surfaces. △ Less

Submitted 22 June, 2012; originally announced June 2012.

Report number: NBI QDEV 2012

Journal ref: Phys. Rev. B 87, 161306(R) (2013)

Effect of pulse error accumulation on dynamical decoupling of the electron spins of phosphorus donors in silicon

Authors: Zhi-Hui Wang, Wenxian Zhang, A. M. Tyryshkin, S. A. Lyon, J. W. Ager, E. E. Haller, V. V. Dobrovitski

Abstract: Dynamical decoupling (DD) is an efficient tool for preserving quantum coherence in solid-state spin systems. However, the imperfections of real pulses can ruin the performance of long DD sequences. We investigate the accumulation and compensation of different pulse errors in DD using the electron spins of phosphorus donors in silicon as a test system. We study periodic DD sequences (PDD) based on… ▽ More Dynamical decoupling (DD) is an efficient tool for preserving quantum coherence in solid-state spin systems. However, the imperfections of real pulses can ruin the performance of long DD sequences. We investigate the accumulation and compensation of different pulse errors in DD using the electron spins of phosphorus donors in silicon as a test system. We study periodic DD sequences (PDD) based on spin rotations about two perpendicular axes, and their concatenated and symmetrized versions. We show that pulse errors may quickly destroy some spin states, but maintain other states with high fidelity over long times. Pulse sequences based on spin rotations about $x$ and $y$ axes outperform those based on $x$ and $z$ axes due to the accumulation of pulse errors. Concatenation provides an efficient way to suppress the impact of pulse errors, and can maintain high fidelity for all spin components: pulse errors do not accumulate (to first order) as the concatenation level increases, despite the exponential increase in the number of pulses. Our theoretical model gives a clear qualitative picture of the error accumulation, and produces results in quantitative agreement with the experiments. △ Less

Submitted 3 January, 2012; v1 submitted 29 November, 2010; originally announced November 2010.

Comments: 13 pages, 5 figures

Journal ref: Phys. Rev. B 85, 085206 (2012)

A Schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure

Authors: J. Sailer, V. Lang, G. Abstreiter, G. Tsuchiya, K. M. Itoh, J. W. Ager III, E. E. Haller, D. Kupidura, D. Harbusch, S. Ludwig, D. Bougeard

Abstract: We report on the realization and top-gating of a two-dimensional electron system in a nuclear spin free environment using 28Si and 70Ge source material in molecular beam epitaxy. Electron spin decoherence is expected to be minimized in nuclear spin-free materials, making them promising hosts for solid-state based quantum information processing devices. The two-dimensional electron system exhibit… ▽ More We report on the realization and top-gating of a two-dimensional electron system in a nuclear spin free environment using 28Si and 70Ge source material in molecular beam epitaxy. Electron spin decoherence is expected to be minimized in nuclear spin-free materials, making them promising hosts for solid-state based quantum information processing devices. The two-dimensional electron system exhibits a mobility of 18000 cm2/Vs at a sheet carrier density of 4.6E11 cm-2 at low temperatures. Feasibility of reliable gating is demonstrated by transport through split-gate structures realized with palladium Schottky top-gates which effectively control the two-dimensional electron system underneath. Our work forms the basis for the realization of an electrostatically defined quantum dot in a nuclear spin free environment. △ Less

Submitted 16 January, 2009; originally announced January 2009.

Comments: 8 pages, 3 figures

Journal ref: Phys. Status Solidi RRL 3, No. 2, 61-63 (2009)

Chiral Symmetry and Electron Spin Relaxation of Lithium Donors in Silicon

Authors: V. N. Smelyanskiy, A. G. Petukhov, A. M. Tyryshkin, S. A. Lyon, T. Schenkel, J. W. Ager, E. E. Haller

Abstract: We report theoretical and experimental studies of the longitudinal electron spin and orbital relaxation time of interstitial Li donors in $^{28}$Si. We predict that despite the near-degeneracy of the ground-state manifold the spin relaxation times are extremely long for the temperatures below 0.3 K. This prediction is based on a new finding of the chiral symmetry of the donor states, which presi… ▽ More We report theoretical and experimental studies of the longitudinal electron spin and orbital relaxation time of interstitial Li donors in $^{28}$Si. We predict that despite the near-degeneracy of the ground-state manifold the spin relaxation times are extremely long for the temperatures below 0.3 K. This prediction is based on a new finding of the chiral symmetry of the donor states, which presists in the presence of random strains and magnetic fields parallel to one of the cubic axes. Experimentally observed kinetics of magnetization reversal at 2.1 K and 4.5 K are in a very close agreement with the theory. To explain these kinetics we introduced a new mechanism of spin decoherence based on a combination of a small off-site displacement of the Li atom and an umklapp phonon process. Both these factors weakly break chiral symmetry and enable the long-term spin relaxation. △ Less

Submitted 24 July, 2008; originally announced July 2008.

Microstructure, magneto-transport and magnetic properties of Gd-doped magnetron-sputtered amorphous carbon

Authors: L. Zeng, E. Helgren, F. Hellman, R. Islam, D. J. Smith, J. W. Ager III

Abstract: The magnetic rare earth element gadolinium (Gd) was doped into thin films of amorphous carbon (hydrogenated \textit{a}-C:H, or hydrogen-free \textit{a}-C) using magnetron co-sputtering. The Gd acted as a magnetic as well as an electrical dopant, resulting in an enormous negative magnetoresistance below a temperature ($T'$). Hydrogen was introduced to control the amorphous carbon bonding structur… ▽ More The magnetic rare earth element gadolinium (Gd) was doped into thin films of amorphous carbon (hydrogenated \textit{a}-C:H, or hydrogen-free \textit{a}-C) using magnetron co-sputtering. The Gd acted as a magnetic as well as an electrical dopant, resulting in an enormous negative magnetoresistance below a temperature ($T'$). Hydrogen was introduced to control the amorphous carbon bonding structure. High-resolution electron microscopy, ion-beam analysis and Raman spectroscopy were used to characterize the influence of Gd doping on the \textit{a-}Gd$_x$C$_{1-x}$(:H$_y$) film morphology, composition, density and bonding. The films were largely amorphous and homogeneous up to $x$=22.0 at.%. As the Gd doping increased, the $sp^{2}$-bonded carbon atoms evolved from carbon chains to 6-member graphitic rings. Incorporation of H opened up the graphitic rings and stabilized a $sp^{2}$-rich carbon-chain random network. The transport properties not only depended on Gd doping, but were also very sensitive to the $sp^{2}$ ordering. Magnetic properties, such as the spin-glass freezing temperature and susceptibility, scaled with the Gd concentration. △ Less

Submitted 26 January, 2007; originally announced January 2007.

Comments: 9 figures

Coherence of Spin Qubits in Silicon

Authors: A. M. Tyryshkin, J. J. L. Morton, S. C. Benjamin, A. Ardavan, G. A. D. Briggs, J. W. Ager, S. A. Lyon

Abstract: Given the effectiveness of semiconductor devices for classical computation one is naturally led to consider semiconductor systems for solid state quantum information processing. Semiconductors are particularly suitable where local control of electric fields and charge transport are required. Conventional semiconductor electronics is built upon these capabilities and has demonstrated scaling to l… ▽ More Given the effectiveness of semiconductor devices for classical computation one is naturally led to consider semiconductor systems for solid state quantum information processing. Semiconductors are particularly suitable where local control of electric fields and charge transport are required. Conventional semiconductor electronics is built upon these capabilities and has demonstrated scaling to large complicated arrays of interconnected devices. However, the requirements for a quantum computer are very different from those for classical computation, and it is not immediately obvious how best to build one in a semiconductor. One possible approach is to use spins as qubits: of nuclei, of electrons, or both in combination. Long qubit coherence times are a prerequisite for quantum computing, and in this paper we will discuss measurements of spin coherence in silicon. The results are encouraging - both electrons bound to donors and the donor nuclei exhibit low decoherence under the right circumstances. Doped silicon thus appears to pass the first test on the road to a quantum computer. △ Less

Submitted 29 December, 2005; originally announced December 2005.

Comments: Submitted to J Cond Matter on Nov 15th, 2005

Effect of Native Defects on Optical Properties of InxGa1-xN Alloys

Authors: S. X. Li, E. E. Haller, K. M. Yu, W. Walukiewicz, J. W. Ager III, J. Wu, W. Shan, Hai Lu, William J. Schaff

Abstract: The energy position of the optical absorption edge and the free carrier populations in InxGa1-xN ternary alloys can be controlled using high energy 4He+ irradiation. The blue shift of the absorption edge after irradiation in In-rich material (x > 0.34) is attributed to the band-filling effect (Burstein-Moss shift) due to the native donors introduced by the irradiation. In Ga-rich material, optic… ▽ More The energy position of the optical absorption edge and the free carrier populations in InxGa1-xN ternary alloys can be controlled using high energy 4He+ irradiation. The blue shift of the absorption edge after irradiation in In-rich material (x > 0.34) is attributed to the band-filling effect (Burstein-Moss shift) due to the native donors introduced by the irradiation. In Ga-rich material, optical absorption measurements show that the irradiation-introduced native defects are inside the bandgap, where they are incorporated as acceptors. The observed irradiation-produced changes in the optical absorption edge and the carrier populations in InxGa1-xN are in excellent agreement with the predictions of the amphoteric defect model. △ Less

Submitted 4 August, 2005; originally announced August 2005.

Structural and Electronic Properties of Amorphous and Polycrystalline In2Se3 Films

Authors: A. Chaiken, K. Nauka, G. A. Gibson, Heon Lee, C. C. Yang, J. Wu, J. W. Ager, K. M. Yu, W. Walukiewicz

Abstract: Structural and electronic properties of amorphous and single-phase polycrystalline films of gamma- and kappa-In2Se3 have been measured. The stable gamma phase nucleates homogeneously in the film bulk and has a high resistivity, while the metastable kappa phase nucleates at the film surface and has a moderate resistivity. The microstructures of hot-deposited and post-annealed cold-deposited gamma… ▽ More Structural and electronic properties of amorphous and single-phase polycrystalline films of gamma- and kappa-In2Se3 have been measured. The stable gamma phase nucleates homogeneously in the film bulk and has a high resistivity, while the metastable kappa phase nucleates at the film surface and has a moderate resistivity. The microstructures of hot-deposited and post-annealed cold-deposited gamma films are quite different but the electronic properties are similar. The increase in the resistivity of amorphous In2Se3 films upon annealing is interpreted in terms of the replacement of In-In bonds with In-Se bonds during crystallization. Great care must be taken in the preparation of In2Se3 films for electrical measurements as the presence of excess chalcogen or surface oxidation may greatly affect the film properties. △ Less

Submitted 19 March, 2003; originally announced March 2003.

Comments: 23 pages and 12 figures