Showing 1–34 of 34 results for author: Appenzeller, J

Tailoring Amorphous Boron Nitride for High-Performance 2D Electronics

Authors: Cindy Y. Chen, Zheng Sun, Riccardo Torsi, Ke Wang, Jessica Kachian, Bangzhi Liu, Gilbert B. Rayner Jr, Zhihong Chen, Joerg Appenzeller, Yu-Chuan Lin, Joshua A. Robinson

Abstract: Two-dimensional (2D) materials have garnered significant attention in recent years due to their atomically thin structure and unique electronic and optoelectronic properties. To harness their full potential for applications in next-generation electronics and photonics, precise control over the dielectric environment surrounding the 2D material is critical. The lack of nucleation sites on 2D surfac… ▽ More Two-dimensional (2D) materials have garnered significant attention in recent years due to their atomically thin structure and unique electronic and optoelectronic properties. To harness their full potential for applications in next-generation electronics and photonics, precise control over the dielectric environment surrounding the 2D material is critical. The lack of nucleation sites on 2D surfaces to form thin, uniform dielectric layers often leads to interfacial defects that degrade the device performance, posing a major roadblock in the realization of 2D-based devices. Here, we demonstrate a wafer-scale, low-temperature process (< 250 °C) using atomic layer deposition (ALD) for the synthesis of uniform, conformal amorphous boron nitride (aBN) thin films. ALD deposition temperatures between 125 and 250 °C result in stoichiometric films with high oxidative stability, yielding a dielectric strength of 8.2 MV/cm. Utilizing a seed-free ALD approach, we form uniform aBN dielectric layers on 2D surfaces and fabricate multiple quantum well structures of aBN/MoS2 and aBN-encapsulated double-gated monolayer (ML) MoS2 field-effect transistors to evaluate the impact of aBN dielectric environment on MoS2 optoelectronic and electronic properties. Our work in scalable aBN dielectric integration paves a way towards realizing the theoretical performance of 2D materials for next-generation electronics. △ Less

Submitted 14 December, 2023; originally announced December 2023.

Comments: 27 pages, 4 figures

Experimental demonstration of an integrated on-chip p-bit core utilizing stochastic Magnetic Tunnel Junctions and 2D-MoS2 FETs

Authors: John Daniel, Zheng Sun, Xuejian Zhang, Yuanqiu Tan, Neil Dilley, Zhihong Chen, Joerg Appenzeller

Abstract: Probabilistic computing is a novel computing scheme that offers a more efficient approach than conventional CMOS-based logic in a variety of applications ranging from optimization to Bayesian inference, and invertible Boolean logic. The probabilistic-bit (or p-bit, the base unit of probabilistic computing) is a naturally fluctuating entity that requires tunable stochasticity; by coupling low-barri… ▽ More Probabilistic computing is a novel computing scheme that offers a more efficient approach than conventional CMOS-based logic in a variety of applications ranging from optimization to Bayesian inference, and invertible Boolean logic. The probabilistic-bit (or p-bit, the base unit of probabilistic computing) is a naturally fluctuating entity that requires tunable stochasticity; by coupling low-barrier stochastic Magnetic Tunnel Junctions (MTJs) with a transistor circuit, a compact implementation is achieved. In this work, through integrating stochastic MTJs with 2D-MoS$_{2}$ FETs, the first on-chip realization of a key p-bit building block displaying voltage-controllable stochasticity is demonstrated. In addition, supported by circuit simulations, this work provides a careful analysis of the three transistor-one magnetic tunnel junction (3T-1MTJ) p-bit design, evaluating how the characteristics of each component influence the overall p-bit output. This understanding of the interplay between the characteristics of the transistors and the MTJ is vital for the construction of a fully functioning p-bit, making the design rules presented in this article key for future experimental implementations of scaled on-chip p-bit networks. △ Less

Submitted 16 October, 2023; v1 submitted 21 August, 2023; originally announced August 2023.

How to Report and Benchmark Emerging Field-Effect Transistors

Authors: Zhihui Cheng, Chin-Sheng Pang, Peiqi Wang, Son T. Le, Yanqing Wu, Davood Shahrjerdi, Iuliana Radu, Max C. Lemme, Lian-Mao Peng, Xiangfeng Duan, Zhihong Chen, Joerg Appenzeller, Steven J. Koester, Eric Pop, Aaron D. Franklin, Curt A. Richter

Abstract: Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of multiple device parameters. More importantly, the interdisciplinarity of this research community results in a lack of consistent reporting and benc… ▽ More Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of multiple device parameters. More importantly, the interdisciplinarity of this research community results in a lack of consistent reporting and benchmarking guidelines. Here we report a consensus among the authors regarding guidelines for reporting and benchmarking important FET parameters and performance metrics. We provide an example of this reporting and benchmarking process for a two-dimensional (2D) semiconductor FET. Our consensus will help promote an improved approach for assessing device performance in emerging FETs, thus aiding the field to progress more consistently and meaningfully. △ Less

Submitted 4 August, 2022; v1 submitted 30 March, 2022; originally announced March 2022.

Comments: 15 pages, 3 figures

Journal ref: Nature Electronics 5 (2022) 416-423

Design Considerations for 2D Dirac-Source FETs: Device Parameters, Non-Idealities and Benchmarking

Authors: Peng Wu, Joerg Appenzeller

Abstract: Dirac-source field-effect transistors (DS-FETs) have been proposed as promising candidates for low-power switching devices by leveraging the Dirac cone of graphene as a low-pass energy filter. In particular, using two-dimensional (2D) materials as the channel in a DS-FET is of interest for ultimate scaling purposes. In this paper, we investigate the design considerations for 2D DS-FETs using balli… ▽ More Dirac-source field-effect transistors (DS-FETs) have been proposed as promising candidates for low-power switching devices by leveraging the Dirac cone of graphene as a low-pass energy filter. In particular, using two-dimensional (2D) materials as the channel in a DS-FET is of interest for ultimate scaling purposes. In this paper, we investigate the design considerations for 2D DS-FETs using ballistic simulations based on Landauer formalism. We study the impact of several key device parameters on the device performance, such as graphene doping, Schottky barrier heights, and effective mass of the 2D channel. In addition, we study the impact of non-idealities on the performance of DS-FETs, such as graphene disorder and rethermalization, as well as ways to mitigate them. Finally, we benchmark the performance of DS-FETs for different channel materials, providing a guide for the proper choice of material for 2D DS-FETs. △ Less

Submitted 21 March, 2022; originally announced March 2022.

Comments: 10 pages, 5 figures

Electric field control of interaction between magnons and quantum spin defects

Authors: Abhishek Bharatbhai Solanki, Simeon I. Bogdanov, Avinash Rustagi, Neil R. Dilley, Tingting Shen, Mohammad Mushfiqur Rahman, Wenqi Tong, Punyashloka Debashis, Zhihong Chen, Joerg Appenzeller, Yong P. Chen, Vladimir M. Shalaev, Pramey Upadhyaya

Abstract: Hybrid systems coupling quantum spin defects (QSD) and magnons can enable unique spintronic device functionalities and probes for magnetism. Here, we add electric field control of magnon-QSD coupling to such systems by integrating ferromagnet-ferroelectric multiferroic with nitrogen-vacancy (NV) center spins. Combining quantum relaxometry with ferromagnetic resonance measurements and analytical mo… ▽ More Hybrid systems coupling quantum spin defects (QSD) and magnons can enable unique spintronic device functionalities and probes for magnetism. Here, we add electric field control of magnon-QSD coupling to such systems by integrating ferromagnet-ferroelectric multiferroic with nitrogen-vacancy (NV) center spins. Combining quantum relaxometry with ferromagnetic resonance measurements and analytical modeling, we reveal that the observed electric-field tuning results from ferroelectric polarization control of the magnon-generated fields at the NV. Exploiting the demonstrated control, we also propose magnon-enhanced hybrid electric field sensors with improved sensitivity. △ Less

Submitted 24 May, 2021; v1 submitted 2 December, 2020; originally announced December 2020.

Sub-60 mV/decade switching in a metal-insulator-metal-insulator-semiconductor transistor without ferroelectric component

Authors: Peng Wu, Joerg Appenzeller

Abstract: Negative capacitance field-effect transistors (NC-FETs) have attracted wide interest as promising candidates for steep-slope devices, and sub-60 mV/decade switching has been demonstrated in NC-FETs with various device structures and material systems. However, the detailed mechanisms of the observed steep-slope switching in some of these experiments are under intense debate. Here we show that sub-6… ▽ More Negative capacitance field-effect transistors (NC-FETs) have attracted wide interest as promising candidates for steep-slope devices, and sub-60 mV/decade switching has been demonstrated in NC-FETs with various device structures and material systems. However, the detailed mechanisms of the observed steep-slope switching in some of these experiments are under intense debate. Here we show that sub-60 mV/decade switching can be observed in a WS2 transistor with a metal-insulator-metal-insulator-semiconductor (MIMIS) structure - without any ferroelectric component. This structure resembles an NC-FET with internal gate, except that the ferroelectric layer is replaced by a leaky dielectric layer. Through simulations of the charging dynamics during the device characterization using an RC network model, we show that the observed steep-slope switching in our "ferroelectric-free" transistors can be attributed to the internal gate voltage response to the chosen varying gate voltage scan rates. We further show that a constant gate voltage scan rate can also lead to transient sub-60 mV/decade switching in an MIMIS structure with voltage dependent internal gate capacitance. Our results indicate that the observation of sub-60 mV/decade switching alone is not sufficient evidence for the successful demonstration of a true steep-slope switching device and that experimentalists need to critically assess their measurement setups to avoid measurement-related artefacts. △ Less

Submitted 1 December, 2020; originally announced December 2020.

Comments: 25 pages, 7 figures

Hardware implementation of Bayesian network building blocks with stochastic spintronic devices

Authors: Punyashloka Debashis, Vaibhav Ostwal, Rafatul Faria, Supriyo Datta, Joerg Appenzeller, Zhihong Chen

Abstract: Bayesian networks are powerful statistical models to understand causal relationships in real-world probabilistic problems such as diagnosis, forecasting, computer vision, etc. For systems that involve complex causal dependencies among many variables, the complexity of the associated Bayesian networks become computationally intractable. As a result, direct hardware implementation of these networks… ▽ More Bayesian networks are powerful statistical models to understand causal relationships in real-world probabilistic problems such as diagnosis, forecasting, computer vision, etc. For systems that involve complex causal dependencies among many variables, the complexity of the associated Bayesian networks become computationally intractable. As a result, direct hardware implementation of these networks is one promising approach to reducing power consumption and execution time. However, the few hardware implementations of Bayesian networks presented in literature rely on deterministic CMOS devices that are not efficient in representing the inherently stochastic variables in a Bayesian network. This work presents an experimental demonstration of a Bayesian network building block implemented with naturally stochastic spintronic devices. These devices are based on nanomagnets with perpendicular magnetic anisotropy, initialized to their hard axes by the spin orbit torque from a heavy metal under-layer utilizing the giant spin Hall effect, enabling stochastic behavior. We construct an electrically interconnected network of two stochastic devices and manipulate the correlations between their states by changing connection weights and biases. By mapping given conditional probability tables to the circuit hardware, we demonstrate that any two node Bayesian networks can be implemented by our stochastic network. We then present the stochastic simulation of an example case of a four node Bayesian network using our proposed device, with parameters taken from the experiment. We view this work as a first step towards the large scale hardware implementation of Bayesian networks. △ Less

Submitted 17 May, 2020; originally announced May 2020.

Comments: 9 pages, 4 figures

A novel compound synapse using probabilistic spin-orbit-torque switching for MTJ based deep neural networks

Authors: Vaibhav Ostwal, Ramtin Zand, Ronald DeMara, Joerg Appenzeller

Abstract: Analog electronic non-volatile memories mimicking synaptic operations are being explored for the implementation of neuromorphic computing systems. Compound synapses consisting of ensembles of stochastic binary elements are alternatives to analog memory synapses to achieve multilevel memory operation. Among existing binary memory technologies, magnetic tunneling junction (MTJ) based Magnetic Random… ▽ More Analog electronic non-volatile memories mimicking synaptic operations are being explored for the implementation of neuromorphic computing systems. Compound synapses consisting of ensembles of stochastic binary elements are alternatives to analog memory synapses to achieve multilevel memory operation. Among existing binary memory technologies, magnetic tunneling junction (MTJ) based Magnetic Random Access Memory (MRAM) technology has matured to the point of commercialization. More importantly for this work, stochasticity is natural to the MTJ switching physics e.g devices referred as p-bits which mimic binary stochastic neurons. In this article, we experimentally demonstrate a novel compound synapse that uses stochastic spin-orbit torque (SOT) switching of an ensemble of nano-magnets that are located on one shared spin Hall effect (SHE) material channel, i.e. tantalum. By using a properly chosen pulse scheme, we are able to demonstrate linear potentiation and depression in the synapse, as required for many neuromorphic architectures. In addition to this experimental effort, we also performed circuit simulations on an SOT-MRAM based 784*200*10 deep belief network (DBN) consisting of p-bit based neurons and compound synapses. MNIST pattern recognition was used to evaluate the system performance, and our findings indicate that a significant reduction in recognition error rates can be achieved when using our incremental pulse scheme rather than a non-linear potentiation and depression as obtained when employing identical pulses. △ Less

Submitted 30 September, 2019; originally announced October 2019.

Channel thickness optimization for ultra thin and 2D chemically doped TFETs

Authors: Chin-Yi Chen, Tarek A. Ameen, Hesameddin Ilatikhameneh, Rajib Rahman, Gerhard Klimeck, Joerg Appenzeller

Abstract: 2D material based tunnel FETs are among the most promising candidates for low power electronics applications since they offer ultimate gate control and high current drives that are achievable through small tunneling distances during the device operation. The ideal device is characterized by a minimized tunneling distance. However, devices with the thinnest possible body do not necessarily provide… ▽ More 2D material based tunnel FETs are among the most promising candidates for low power electronics applications since they offer ultimate gate control and high current drives that are achievable through small tunneling distances during the device operation. The ideal device is characterized by a minimized tunneling distance. However, devices with the thinnest possible body do not necessarily provide the best performance. For example, reducing the channel thickness increases the depletion width in the source which can be a significant part of the total tunneling distance. Hence, it is important to determine the optimum channel thickness for each channel material individually. In this work, we study the optimum channel thickness for three channel materials: WSe$_{2}$, Black Phosphorus (BP), and InAs using full-band self-consistent quantum transport simulations. To identify the ideal channel thickness for each material at a specific doping density, a new analytic model is proposed and benchmarked against the numerical simulations. △ Less

Submitted 29 April, 2018; originally announced April 2018.

Electric field induced semiconductor-to-metal phase transition in vertical MoTe2 and Mo1-xWxTe2 devices

Authors: Feng Zhang, Sergiy Krylyuk, Huairuo Zhang, Cory A. Milligan, Dmitry Y. Zemlyanov, Leonid A. Bendersky, Albert V. Davydov, Joerg Appenzeller

Abstract: Over the past years, transition metal dichalcogenides (TMDs) have attracted attention as potential building blocks for various electronic applications due to their atomically thin nature. An exciting development is the recent success in 'engineering' crystal phases of TMD compounds during the growth due to their polymorphic character. Here, we report an electric field induced reversible engineered… ▽ More Over the past years, transition metal dichalcogenides (TMDs) have attracted attention as potential building blocks for various electronic applications due to their atomically thin nature. An exciting development is the recent success in 'engineering' crystal phases of TMD compounds during the growth due to their polymorphic character. Here, we report an electric field induced reversible engineered phase transition in vertical 2H-MoTe2 devices, a crucial experimental finding that enables electrical phase switching for these ultra-thin layered materials. Scanning tunneling microscopy (STM) was utilized to analyze the TMD crystalline structure after applying an electric field, and scanning tunneling spectroscopy (STS) was employed to map a semiconductor-to-metal phase transition on the nanoscale. In addition, direct confirmation of a phase transition from 2H semiconductor to a distorted 2H' metallic phase was obtained by scanning transmission electron microscopy (STEM). MoTe2 and Mo1-xWxTe2 alloy based vertical resistive random access memory (RRAM) cells were fabricated to demonstrate clear reproducible and controlled switching with programming voltages that are tunable by the layer thickness and that show a distinctly different trend for the binary compound if compared to the ternary materials. △ Less

Submitted 12 September, 2017; originally announced September 2017.

Understanding contact gating in Schottky barrier transistors from 2D channels

Authors: Abhijith Prakash, Hesameddin Ilatikhameneh, Peng Wu, Joerg Appenzeller

Abstract: In this article, a novel two-path model is proposed to quantitatively explain sub-threshold characteristics of back-gated Schottky barrier FETs (SB-FETs) from 2D channel materials. The model integrates the 'conventional' model for SB-FETs with the phenomenon of contact gating - an effect that significantly affects the carrier injection from the source electrode in back-gated field effect transisto… ▽ More In this article, a novel two-path model is proposed to quantitatively explain sub-threshold characteristics of back-gated Schottky barrier FETs (SB-FETs) from 2D channel materials. The model integrates the 'conventional' model for SB-FETs with the phenomenon of contact gating - an effect that significantly affects the carrier injection from the source electrode in back-gated field effect transistors. The two-path model is validated by a careful comparison with experimental characteristics obtained from a large number of back-gated WSe2 devices with various channel thicknesses. Our findings are believed to be of critical importance for the quantitative analysis of many three-terminal devices with ultrathin body channels. △ Less

Submitted 14 September, 2017; v1 submitted 5 July, 2017; originally announced July 2017.

Journal ref: Scientific Reports 7, Article number: 12596 (2017)

Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure

Authors: Angelica Azcatl, Xiaoye Qin, Abhijith Prakash, Chenxi Zhang, Lanxia Cheng, Qingxiao Wang, Ning Lu, Moon J. Kim, Jiyoung Kim, Kyeongjae Cho, Rafik Addou, Christopher L. Hinkle, Joerg Appenzeller, Robert M. Wallace

Abstract: Controllable doping of two-dimensional materials is highly desired for ideal device performance in both hetero- and p-n homo-junctions. Herein, we propose an effective strategy for doping of MoS2 with nitrogen through a remote N2 plasma surface treatment. By monitoring the surface chemistry of MoS2 upon N2 plasma exposure using in-situ X-ray photoelectron spectroscopy, we identified the presence o… ▽ More Controllable doping of two-dimensional materials is highly desired for ideal device performance in both hetero- and p-n homo-junctions. Herein, we propose an effective strategy for doping of MoS2 with nitrogen through a remote N2 plasma surface treatment. By monitoring the surface chemistry of MoS2 upon N2 plasma exposure using in-situ X-ray photoelectron spectroscopy, we identified the presence of covalently bonded nitrogen in MoS2, where substitution of the chalcogen sulfur by nitrogen is determined as the doping mechanism. Furthermore, the electrical characterization demonstrates that p-type doping of MoS2 is achieved by nitrogen doping, in agreement with theoretical predictions. Notably, we found that the presence of nitrogen can induce compressive strain in the MoS2 structure, which represents the first evidence of strain induced by substitutional doping in a transition metal dichalcogenide material. Finally, our first principle calculations support the experimental demonstration of such strain, and a correlation between nitrogen doping concentration and compressive strain in MoS2 is elucidated. △ Less

Submitted 22 July, 2016; originally announced July 2016.

Design Rules for High Performance Tunnel Transistors from 2D Materials

Authors: Hesameddin Ilatikhameneh, Gerhard Klimeck, Joerg Appenzeller, Rajib Rahman

Abstract: Tunneling field-effect transistors (TFETs) based on 2D materials are promising steep sub-threshold swing (SS) devices due to their tight gate control. There are two major methods to create the tunnel junction in these 2D TFETs: electrical and chemical doping. In this work, design guidelines for both electrically and chemically doped 2D TFETs are provided using full band atomistic quantum transport… ▽ More Tunneling field-effect transistors (TFETs) based on 2D materials are promising steep sub-threshold swing (SS) devices due to their tight gate control. There are two major methods to create the tunnel junction in these 2D TFETs: electrical and chemical doping. In this work, design guidelines for both electrically and chemically doped 2D TFETs are provided using full band atomistic quantum transport simulations in conjunction with analytic modeling. Moreover, several 2D TFETs' performance boosters such as strain, source doping, and equivalent oxide thickness (EOT) are studied. Later on, these performance boosters are analyzed within a novel figure-of-merit plot (i.e. constant ON-current plot). △ Less

Submitted 30 March, 2016; originally announced March 2016.

Comments: 5 pages, 8 figures

Journal ref: IEEE Journal of the Electron Devices Society ( Volume: 4, Issue: 5, Pages:260 - 265, Sept. 2016 )

From Fowler-Nordheim to Non-Equilibrium Green's Function Modeling of Tunneling

Authors: Hesameddin Ilatikhameneh, Ramon B. Salazar, Gerhard Klimeck, Rajib Rahman, Joerg Appenzeller

Abstract: In this work, an analytic model is proposed which provides in a continuous manner the current-voltage characteristic (I-V) of high performance tunneling field-effect transistors (TFETs) based on direct bandgap semiconductors. The model provides closed-form expressions for I-V based on: 1) a modified version of the well-known Fowler-Nordheim (FN) formula (in the ON-state), and 2) an equation which… ▽ More In this work, an analytic model is proposed which provides in a continuous manner the current-voltage characteristic (I-V) of high performance tunneling field-effect transistors (TFETs) based on direct bandgap semiconductors. The model provides closed-form expressions for I-V based on: 1) a modified version of the well-known Fowler-Nordheim (FN) formula (in the ON-state), and 2) an equation which describes the OFF-state performance while providing continuity at the ON/OFF threshold by means of a term introduced as the "continuity factor". It is shown that traditional approaches such as FN are accurate in TFETs only through correct evaluation of the total band bending distance and the "tunneling effective mass". General expressions for these two key parameters are provided. Moreover, it is demonstrated that the tunneling effective mass captures both the ellipticity of evanescent states and the dual (electron/hole) behavior of the tunneling carriers, and it is further shown that such a concept is even applicable to semiconductors with nontrivial energy dispersion. Ultimately, it is found that the I-V characteristics obtained by using this model are in close agreement with state-of-the-art quantum transport simulations both in the ON- and OFF-state, thus providing validation of the analytic approach. △ Less

Submitted 27 September, 2015; originally announced September 2015.

Comments: 9 pages, 6 figures

Dielectric Engineered Tunnel Field-Effect Transistor

Authors: Hesameddin Ilatikhameneh, Tarek A. Ameen, Gerhard Klimeck, Joerg Appenzeller, Rajib Rahman

Abstract: The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high performance steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics results in a high electric field at the tunnel junction. As a result a record ON-current of about 1000 uA/um and a subthreshold swing (SS) below 20mV/dec are predicted for WTe2 DE-TFET. The proposed TFET works based on… ▽ More The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high performance steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics results in a high electric field at the tunnel junction. As a result a record ON-current of about 1000 uA/um and a subthreshold swing (SS) below 20mV/dec are predicted for WTe2 DE-TFET. The proposed TFET works based on a homojunction channel and electrically doped contacts both of which are immune to interface states, dopant fluctuations, and dopant states in the band gap which typically deteriorate the OFF-state performance and SS in conventional TFETs. △ Less

Submitted 3 August, 2015; originally announced August 2015.

Comments: 3 pages, 3 figures

Journal ref: IEEE Electron Device Letters vol. 36, no. 10, pp. 1097 - 1100 (2015)

A Predictive Analytic Model for High-Performance Tunneling-Field Effect Transistors Approaching Non-Equilibrium Green's Function Simulations

Authors: Ramon B. Salazar, Hesameddin Ilatikhameneh, Rajib Rahman, Gerhard Klimeck, Joerg Appenzeller

Abstract: A new compact modeling approach is presented which describes the full current-voltage (I-V) characteristic of high-performance (aggressively scaled-down) tunneling field-effect-transistors (TFETs) based on homojunction direct-bandgap semiconductors. The model is based on an analytic description of two key features, which capture the main physical phenomena related to TFETs: 1) the potential profil… ▽ More A new compact modeling approach is presented which describes the full current-voltage (I-V) characteristic of high-performance (aggressively scaled-down) tunneling field-effect-transistors (TFETs) based on homojunction direct-bandgap semiconductors. The model is based on an analytic description of two key features, which capture the main physical phenomena related to TFETs: 1) the potential profile from source to channel, and 2) the elliptic curvature of the complex bands in the bandgap region. It is proposed to use 1D Poisson's equations in the source and the channel to describe the potential profile in homojunction TFETs. This allows to quantify the impact of source/drain doping on device performance, an aspect usually ignored in TFET modeling but highly relevant in ultra-scaled devices. The compact model is validated by comparison with state-of-the-art quantum transport simulations using a 3D full band atomistic approach based on Non-Equilibrium Green's Functions (NEGF). It is shown that the model reproduces with good accuracy the data obtained from the simulations in all regions of operation: the on/off states and the n/p branches of conduction. This approach allows calculation of energy-dependent band-toband tunneling currents in TFETs, a feature that allows gaining deep insights into the underlying device physics. The simplicity and accuracy of the approach provides a powerful tool to explore in a quantitatively manner how a wide variety of parameters (material-, size- and/or geometrydependent) impact the TFET performance under any bias conditions. The proposed model presents thus a practical complement to computationally expensive simulations such as the 3D NEGF approach. △ Less

Submitted 29 October, 2015; v1 submitted 30 May, 2015; originally announced June 2015.

Comments: 31 pages, 6 figures

Journal ref: Journal of Applied Physics, vol. 118, no. 16, pp. 164305 (2015)

Scaling Theory of Electrically Doped 2D Transistors

Authors: Hesameddin Ilatikhameneh, Gerhard Klimeck, Joerg Appenzeller, Rajib Rahman

Abstract: In this letter, it is shown that the existing scaling theories for chemically doped transistors cannot be applied to the novel class of electrically doped 2D transistors and the concept of equivalent oxide thickness (EOT) is not applicable anymore. Hence, a novel scaling theory is developed based on analytic solutions of the 2D Poisson equation. Full band atomistic quantum transport simulations ve… ▽ More In this letter, it is shown that the existing scaling theories for chemically doped transistors cannot be applied to the novel class of electrically doped 2D transistors and the concept of equivalent oxide thickness (EOT) is not applicable anymore. Hence, a novel scaling theory is developed based on analytic solutions of the 2D Poisson equation. Full band atomistic quantum transport simulations verify the theory and show that the critical design parameters are the physical oxide thickness and distance between the gates. Accordingly, the most optimized electrically doped devices are those with the smallest spacing between the gates and the thinnest oxide, and not the smallest EOT. △ Less

Submitted 19 June, 2015; v1 submitted 13 April, 2015; originally announced April 2015.

Comments: 3 pages, 2 Figures

Journal ref: IEEE Electron Device Letters, vol. 36, no. 7, pp. 726 - 728 (2015)

Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials

Authors: Hesameddin Ilatikhameneh, Yaohua Tan, Bozidar Novakovic, Gerhard Klimeck, Rajib Rahman, Joerg Appenzeller

Abstract: In this work, the performance of Tunnel Field-Effect Transistors (TFETs) based on two-dimensional Transition Metal Dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. One of the major challenges of TFETs is their low ON-currents. 2D material based TFETs can have tight gate control and high electric fields at the tunnel junction, and can in principle generate… ▽ More In this work, the performance of Tunnel Field-Effect Transistors (TFETs) based on two-dimensional Transition Metal Dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. One of the major challenges of TFETs is their low ON-currents. 2D material based TFETs can have tight gate control and high electric fields at the tunnel junction, and can in principle generate high ON-currents along with a sub-threshold swing smaller than 60 mV/dec. Our simulations reveal that high performance TMD TFETs, not only require good gate control, but also rely on the choice of the right channel material with optimum band gap, effective mass and source/drain doping level. Unlike previous works, a full band atomistic tight binding method is used self-consistently with 3D Poisson equation to simulate ballistic quantum transport in these devices. The effect of the choice of TMD material on the performance of the device and its transfer characteristics are discussed. Moreover, the criteria for high ON-currents are explained with a simple analytic model, showing the related fundamental factors. Finally, the subthreshold swing and energy-delay of these TFETs are compared with conventional CMOS devices. △ Less

Submitted 19 June, 2015; v1 submitted 5 February, 2015; originally announced February 2015.

Comments: 7 pages, 8 figures. The revised version is uploaded

Journal ref: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, vol. 1, pp. 12-18 (2015)

Substrate Gating of Contact Resistance in Graphene Transistors

Authors: Dionisis Berdebes, Tony Low, Yang Sui, Joerg Appenzeller, Mark Lundstrom

Abstract: Metal contacts have been identified to be a key technological bottleneck for the realization of viable graphene electronics. Recently, it was observed that for structures that possess both a top and a bottom gate, the electron-hole conductance asymmetry can be modulated by the bottom gate. In this letter, we explain this observation by postulating the presence of an effective thin interfacial diel… ▽ More Metal contacts have been identified to be a key technological bottleneck for the realization of viable graphene electronics. Recently, it was observed that for structures that possess both a top and a bottom gate, the electron-hole conductance asymmetry can be modulated by the bottom gate. In this letter, we explain this observation by postulating the presence of an effective thin interfacial dielectric layer between the metal contact and the underlying graphene. Electrical results from quantum transport calculations accounting for this modified electrostatics corroborate well with the experimentally measured contact resistances. Our study indicates that the engineering of metal- graphene interface is a crucial step towards reducing the contact resistance for high performance graphene transistors. △ Less

Submitted 31 March, 2011; v1 submitted 29 March, 2011; originally announced March 2011.

Comments: 5 pages, 4 figures

Signatures of disorder in the minimum conductivity of graphene

Authors: Yang Sui, Tony Low, Mark Lundstrom, Joerg Appenzeller

Abstract: Graphene has been proposed as a promising material for future nanoelectronics because of its unique electronic properties. Understanding the scaling behavior of this new nanomaterial under common experimental conditions is of critical importance for developing graphene-based nanoscale devices. We present a comprehensive experimental and theoretical study on the influence of edge disorder and bulk… ▽ More Graphene has been proposed as a promising material for future nanoelectronics because of its unique electronic properties. Understanding the scaling behavior of this new nanomaterial under common experimental conditions is of critical importance for developing graphene-based nanoscale devices. We present a comprehensive experimental and theoretical study on the influence of edge disorder and bulk disorder on the minimum conductivity of graphene ribbons. For the first time, we discovered a strong non-monotonic size scaling behavior featuring a peak and saturation minimum conductivity. Through extensive numerical simulations and analysis, we are able to attribute these features to the amount of edge and bulk disorder in graphene devices. This study elucidates the quantum transport mechanisms in realistic experimental graphene systems, which can be used as a guideline for designing graphene-based nanoscale devices with improved performance. △ Less

Submitted 17 February, 2011; originally announced February 2011.

Comments: Article: 14 pages, 4 figures. Supporting information: 8 pages, 3 figures

Journal ref: Nano Lett., Article ASAP, Publication Date (Web): February 17, 2011. http://pubs.acs.org/doi/abs/10.1021/nl104399z

Screening and interlayer coupling in multilayer graphene field-effect transistors

Authors: Yang Sui, Joerg Appenzeller

Abstract: With the motivation of improving the performance and reliability of aggressively scaled nano-patterned graphene field-effect transistors, we present the first systematic experimental study on charge and current distribution in multilayer graphene field-effect transistors. We find a very particular thickness dependence for Ion, Ioff, and the Ion/Ioff ratio, and propose a resistor network model in… ▽ More With the motivation of improving the performance and reliability of aggressively scaled nano-patterned graphene field-effect transistors, we present the first systematic experimental study on charge and current distribution in multilayer graphene field-effect transistors. We find a very particular thickness dependence for Ion, Ioff, and the Ion/Ioff ratio, and propose a resistor network model including screening and interlayer coupling to explain the experimental findings. In particular, our model does not invoke modification of the linear energy-band structure of graphene for the multilayer case. Noise reduction in nano-scale few-layer graphene transistors is experimentally demonstrated and can be understood within this model as well. △ Less

Submitted 10 September, 2009; originally announced September 2009.

Comments: 13 pages, 4 figures, 20 references

Journal ref: Yang Sui, Joerg Appenzeller, Nano Letters, 2009, 9 (8), 2973-2977

Electronic transport properties of a tilted graphene pn junction

Authors: Tony Low, Joerg Appenzeller

Abstract: Spatial manipulation of current flow in graphene could be achieved through the use of a tilted pn junction. We show through numerical simulation that a pseudo-Hall effect (i.e. non-equilibrium charge and current density accumulating along one of the sides of a graphene ribbon) can be observed under these conditions. The tilt angle and the pn transition length are two key parameters in tuning the… ▽ More Spatial manipulation of current flow in graphene could be achieved through the use of a tilted pn junction. We show through numerical simulation that a pseudo-Hall effect (i.e. non-equilibrium charge and current density accumulating along one of the sides of a graphene ribbon) can be observed under these conditions. The tilt angle and the pn transition length are two key parameters in tuning the strength of this effect. This phenomenon can be explained using classical trajectory via ray analysis, and is therefore relatively robust against disorder. Lastly, we propose and simulate a three terminal device that allows direct experimental access to the proposed effect. △ Less

Submitted 3 October, 2009; v1 submitted 5 May, 2009; originally announced May 2009.

Comments: 7 pages, 7 figures

Journal ref: Phys. Rev. B 80, 155406 (2009)

Mobility Extraction and Quantum Capacitance Impact in High Performance Graphene Field-effect Transistor Devices

Authors: Zhihong Chen, Joerg Appenzeller

Abstract: The field-effect mobility of graphene devices is discussed. We argue that the graphene ballistic mean free path can only be extracted by taking into account both, the electrical characteristics and the channel length dependent mobility. In doing so we find a ballistic mean free path of 300nm at room-temperature for a carrier concentration of ~1e12/cm2 and that a substantial series resistance of… ▽ More The field-effect mobility of graphene devices is discussed. We argue that the graphene ballistic mean free path can only be extracted by taking into account both, the electrical characteristics and the channel length dependent mobility. In doing so we find a ballistic mean free path of 300nm at room-temperature for a carrier concentration of ~1e12/cm2 and that a substantial series resistance of around 300ohmum has to be taken into account. Furthermore, we demonstrate first quantum capacitance measurements on single-layer graphene devices. △ Less

Submitted 19 December, 2008; originally announced December 2008.

Journal ref: IEEE IEDM Technical Digest 21.1, page 509-512 (2008)

Conductance asymmetry of graphene pn junction

Authors: Tony Low, Seokmin Hong, Joerg Appenzeller, Supriyo Datta, Mark Lundstrom

Abstract: We use the non-equilibrium Green function (NEGF) method in the ballistic limit to provide a quantitative description of the conductance of graphene pn junctions - an important building block for graphene electronics devices. In this paper, recent experiments on graphene junctions are explained by a ballistic transport model, but only if the finite junction transition width, Dw, is accounted for.… ▽ More We use the non-equilibrium Green function (NEGF) method in the ballistic limit to provide a quantitative description of the conductance of graphene pn junctions - an important building block for graphene electronics devices. In this paper, recent experiments on graphene junctions are explained by a ballistic transport model, but only if the finite junction transition width, Dw, is accounted for. In particular, the experimentally observed anamolous increase in the resistance asymmetry between nn and np junctions under low source/drain charge density conditions is also quantitatively captured by our model. In light of the requirement for sharp junctions in applications such as electron focusing, we also examine the pn junction conductance in the regime where Dw is small and find that wavefunction mismatch (so-called pseudo-spin) plays a major role in sharp pn junctions. △ Less

Submitted 5 June, 2009; v1 submitted 8 November, 2008; originally announced November 2008.

Comments: 7 pages, 6 figures

Journal ref: Trans. Elec. Dev. 56, 1292 (2009)

Improved modeling of Coulomb effects in nanoscale Schottky-barrier FETs

Authors: Klaus Michael Indlekofer, Joachim Knoch, Joerg Appenzeller

Abstract: We employ a novel multi-configurational self-consistent Green's function approach (MCSCG) for the simulation of nanoscale Schottky-barrier field-effect transistors. This approach allows to calculate the electronic transport with a seamless transition from the single-electron regime to room temperature field-effect transistor operation. The particular improvement of the MCSCG stems from a divisio… ▽ More We employ a novel multi-configurational self-consistent Green's function approach (MCSCG) for the simulation of nanoscale Schottky-barrier field-effect transistors. This approach allows to calculate the electronic transport with a seamless transition from the single-electron regime to room temperature field-effect transistor operation. The particular improvement of the MCSCG stems from a division of the channel system into a small subsystem of resonantly trapped states for which a many-body Fock space becomes feasible and a strongly coupled rest which can be treated adequately on a conventional mean-field level. The Fock space description allows for the calculation of few-electron Coulomb charging effects beyond mean-field. We compare a conventional Hartree non-equilibrium Green's function calculation with the results of the MCSCG approach. Using the MCSCG method Coulomb blockade effects are demonstrated at low temperatures while under strong nonequilibrium and room temperature conditions the Hartree approximation is retained. △ Less

Submitted 1 September, 2006; originally announced September 2006.

Journal ref: IEEE Trans. Electron Dev. 54, 1502-1509 (2007)

Direct and Heterodyne Detection of Microwaves in a Metallic Single Wall Carbon Nanotube

Authors: F. Rodriguez-Morales, R. Zannoni, J. Nicholson, M. Fischetti, K. S. Yngvesson, J. Appenzeller

Abstract: This letter reports measurements of microwave (up to 4.5 GHz) detection in metallic single-walled carbon nanotubes. The measured voltage responsivity was found to be 114 V/W at 77K. We also demonstrated heterodyne detection at 1 GHz. The detection mechanism can be explained based on standard microwave detector theory and the nonlinearity of the DC IV-curve. We discuss the possible causes of this… ▽ More This letter reports measurements of microwave (up to 4.5 GHz) detection in metallic single-walled carbon nanotubes. The measured voltage responsivity was found to be 114 V/W at 77K. We also demonstrated heterodyne detection at 1 GHz. The detection mechanism can be explained based on standard microwave detector theory and the nonlinearity of the DC IV-curve. We discuss the possible causes of this nonlinearity. While the frequency response is limited by circuit parasitics in this measurement, we discuss evidence that indicates that the effect is much faster and that applications of carbon nanotubes as terahertz detectors are feasible. △ Less

Submitted 21 April, 2006; originally announced April 2006.

Quantum confinement corrections to the capacitance of gated one-dimensional nanostructures

Authors: K. M. Indlekofer, J. Knoch, J. Appenzeller

Abstract: With the help of a multi-configurational Green's function approach we simulate single-electron Coulomb charging effects in gated ultimately scaled nanostructures which are beyond the scope of a selfconsistent mean-field description. From the simulated Coulomb-blockade characteristics we derive effective system capacitances and demonstrate how quantum confinement effects give rise to corrections.… ▽ More With the help of a multi-configurational Green's function approach we simulate single-electron Coulomb charging effects in gated ultimately scaled nanostructures which are beyond the scope of a selfconsistent mean-field description. From the simulated Coulomb-blockade characteristics we derive effective system capacitances and demonstrate how quantum confinement effects give rise to corrections. Such deviations are crucial for the interpretation of experimentally determined capacitances and the extraction of application-relevant system parameters. △ Less

Submitted 10 April, 2006; originally announced April 2006.

Journal ref: Phys. Rev. B 74, 113310 (2006)

Low-frequency Current Fluctuations in Individual Semiconducting Single-Wall Carbon Nanotubes

Authors: Yu-Ming Lin, Joerg Appenzeller, Joachin Knoch, Zhihong Chen, Phaedon Avouris

Abstract: We present a systematic study on low-frequency current fluctuations of nano-devices consisting of one single semiconducting nanotube, which exhibit significant 1/f-type noise. By examining devices with different switching mechanisms, carrier types (electrons vs. holes), and channel lengths, we show that the 1/f fluctuation level in semiconducting nanotubes is correlated to the total number of tr… ▽ More We present a systematic study on low-frequency current fluctuations of nano-devices consisting of one single semiconducting nanotube, which exhibit significant 1/f-type noise. By examining devices with different switching mechanisms, carrier types (electrons vs. holes), and channel lengths, we show that the 1/f fluctuation level in semiconducting nanotubes is correlated to the total number of transport carriers present in the system. However, the 1/f noise level per carrier is not larger than that of most bulk conventional semiconductors, e.g. Si. The pronounced noise level observed in nanotube devices simply reflects on the small number of carriers involved in transport. These results not only provide the basis to quantify the noise behavior in a one-dimensional transport system, but also suggest a valuable way to characterize low-dimensional nanostructures based on the 1/f fluctuation phenomenon. △ Less

Submitted 22 December, 2005; originally announced December 2005.

Journal ref: Nano Lett. 2006; 6(5); 930-936

Quantum kinetic description of Coulomb effects in one-dimensional nano-transistors

Authors: K. M. Indlekofer, J. Knoch, J. Appenzeller

Abstract: In this article, we combine the modified electrostatics of a one-dimensional transistor structure with a quantum kinetic formulation of Coulomb interaction and nonequilibrium transport. A multi-configurational self-consistent Green's function approach is presented, accounting for fluctuating electron numbers. On this basis we provide a theory for the simulation of electronic transport and quantu… ▽ More In this article, we combine the modified electrostatics of a one-dimensional transistor structure with a quantum kinetic formulation of Coulomb interaction and nonequilibrium transport. A multi-configurational self-consistent Green's function approach is presented, accounting for fluctuating electron numbers. On this basis we provide a theory for the simulation of electronic transport and quantum charging effects in nano-transistors, such as gated carbon nanotube and whisker devices and one-dimensional CMOS transistors. Single-electron charging effects arise naturally as a consequence of the Coulomb repulsion within the channel. △ Less

Submitted 28 April, 2005; originally announced April 2005.

Journal ref: Phys. Rev. B 72, 125308 (2005)

High-Performance Carbon Nanotube Field-Effect Transistor with Tunable Polarities

Authors: Yu-Ming Lin, Joerg Appenzeller, Joachim Knoch, Phaedon Avouris

Abstract: State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky barrier (SB)-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However, decreasing the oxide thickness also results in pronounced ambipolar transistor characteristics and increased drain leakage currents. Using a novel device conc… ▽ More State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky barrier (SB)-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However, decreasing the oxide thickness also results in pronounced ambipolar transistor characteristics and increased drain leakage currents. Using a novel device concept, we have fabricated high-performance, enhancement-mode CNFETs exhibiting n or p-type unipolar behavior, tunable by electrostatic and/or chemical doping, with excellent OFF-state performance and a steep subthreshold swing (S =63 mV/dec). The device design allows for aggressive oxide thickness and gate length scaling while maintaining the desired device characteristics. △ Less

Submitted 27 January, 2005; originally announced January 2005.

Comments: 26 pages, 12 figures, accepted for IEEE Trans. Nanotechnology

Journal ref: IEEE Trans. Nanotechnology Vol. 4 (5), pp.481--489, 2005

High performance n-doped carbon nanotube field-effect transistors

Authors: M. Radosavljevic, J. Appenzeller, Ph. Avouris, J. Knoch

Abstract: We describe a robust technique for the fabrication of high performance vertically scaled n-doped field-effect transistors from large band gap carbon nanotubes. These devices have a tunable threshold voltage in the technologically relevant range (-1.3V < V_th < 0.5V) and can carry up to 5-6 muA of current in the on-state. We achieve such performance by exposure to potassium (K) vapor and device a… ▽ More We describe a robust technique for the fabrication of high performance vertically scaled n-doped field-effect transistors from large band gap carbon nanotubes. These devices have a tunable threshold voltage in the technologically relevant range (-1.3V < V_th < 0.5V) and can carry up to 5-6 muA of current in the on-state. We achieve such performance by exposure to potassium (K) vapor and device annealing in high vacuum. The treatment has a two-fold effect to: (i) controllably shift V_th toward negative gate biases via bulk doping of the nanotube (up to about 0.6e/nm), and (ii) increase the on-current by 1-2 orders of magnitude. This current enhancement is achieved by lowering external device resistance due to more intimate contact between K metal and doped nanotube channel in addition to potential reduction of the Schottky barrier height at the contact. △ Less

Submitted 13 February, 2004; originally announced February 2004.

Comments: "The following article has been submitted to Applied Physics Letters. After it is published, it will be found at http://scitation.aip.org/aplo"

Lateral scaling in carbon nanotube field-effect transistors

Authors: S. J. Wind, J. Appenzeller, Ph. Avouris

Abstract: We have fabricated carbon nanotube (CN) field-effect transistors with multiple, individually addressable gate segments. The devices exhibit markedly different transistor characteristics when switched using gate segments controlling the device interior versus those near the source and drain. We ascribe this difference to a change from Schottky barrier modulation at the contacts to bulk switching.… ▽ More We have fabricated carbon nanotube (CN) field-effect transistors with multiple, individually addressable gate segments. The devices exhibit markedly different transistor characteristics when switched using gate segments controlling the device interior versus those near the source and drain. We ascribe this difference to a change from Schottky barrier modulation at the contacts to bulk switching. We also find that the current through the bulk portion is independent of gate length for any gate voltage, offering direct evidence for ballistic transport in semiconducting CNs over at least a few hundred nanometers, even for relatively small carrier velocities. △ Less

Submitted 11 June, 2003; originally announced June 2003.

Comments: 4 pages, 4 figures

Carbon Nanotubes as Schottky Barrier Transistors

Authors: S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, Ph. Avouris

Abstract: We show that carbon nanotube transistors operate as unconventional "Schottky barrier transistors", in which transistor action occurs primarily by varying the contact resistance rather than the channel conductance. Transistor characteristics are calculated for both idealized and realistic geometries, and scaling behavior is demonstrated. Our results explain a variety of experimental observations,… ▽ More We show that carbon nanotube transistors operate as unconventional "Schottky barrier transistors", in which transistor action occurs primarily by varying the contact resistance rather than the channel conductance. Transistor characteristics are calculated for both idealized and realistic geometries, and scaling behavior is demonstrated. Our results explain a variety of experimental observations, including the quite different effects of doping and adsorbed gases. The electrode geometry is shown to be crucial for good device performance. △ Less

Submitted 16 July, 2002; originally announced July 2002.

Comments: 4 pages, 5 figures, appears in Physical Review Letters

Intertube coupling in ropes of single-wall carbon nanotubes

Authors: H. Stahl, J. Appenzeller, R. Martel, Ph. Avouris, B. Lengeler

Abstract: We investigate the coupling between individual tubes in a rope of single-wall carbon nanotubes using four probe resistance measurements. By introducing defects through the controlled sputtering of the rope we generate a strong non-monotonic temperature dependence of the four terminal resistance. This behavior reflects the interplay between localization in the intentionally damaged tubes and coup… ▽ More We investigate the coupling between individual tubes in a rope of single-wall carbon nanotubes using four probe resistance measurements. By introducing defects through the controlled sputtering of the rope we generate a strong non-monotonic temperature dependence of the four terminal resistance. This behavior reflects the interplay between localization in the intentionally damaged tubes and coupling to undamaged tubes in the same rope. Using a simple model we obtain the coherence length and the coupling resistance. The coupling mechanism is argued to involve direct tunneling between tubes. △ Less

Submitted 27 March, 2000; originally announced March 2000.

Comments: 5 pages, 3 figures, submitted to Phys. Rev. Lett