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Diamond Micro-Chip for Quantum Microscopy
Authors:
Shahidul Asif,
Hang Chen,
Johannes Cremer,
Shantam Ravan,
Jeyson Tamara-Isaza,
Saurabh Lamsal,
Reza Ebadi,
Yan Li,
Ling-Jie Zhou,
Cui-Zu Chang,
John Q. Xiao,
Amir Yacoby,
Ronald L. Walsworth,
Mark J. H. Ku
Abstract:
The nitrogen vacancy (NV) center in diamond is an increasingly popular quantum sensor for microscopy of electrical current, magnetization, and spins. However, efficient NV-sample integration with a robust, high-quality interface remains an outstanding challenge to realize scalable, high-throughput microscopy. In this work, we characterize a diamond micro-chip (DMC) containing a (111)-oriented NV e…
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The nitrogen vacancy (NV) center in diamond is an increasingly popular quantum sensor for microscopy of electrical current, magnetization, and spins. However, efficient NV-sample integration with a robust, high-quality interface remains an outstanding challenge to realize scalable, high-throughput microscopy. In this work, we characterize a diamond micro-chip (DMC) containing a (111)-oriented NV ensemble; and demonstrate its utility for high-resolution quantum microscopy. We perform strain imaging of the DMC and find minimal detrimental strain variation across a field-of-view of tens of micrometer. We find good ensemble NV spin coherence and optical properties in the DMC, suitable for sensitive magnetometry. We then use the DMC to demonstrate wide-field microscopy of electrical current, and show that diffraction-limited quantum microscopy can be achieved. We also demonstrate the deterministic transfer of DMCs with multiple materials of interest for next-generation electronics and spintronics. Lastly, we develop a polymer-based technique for DMC placement. This work establishes the DMC's potential to expand the application of NV quantum microscopy in materials, device, geological, biomedical, and chemical sciences.
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Submitted 15 March, 2024;
originally announced March 2024.
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Above-room-temperature ferromagnetism in ultrathin van der Waals magnet
Authors:
Hang Chen,
Shahidul Asif,
Kapildeb Dolui,
Yang Wang,
Jeyson Tamara Isaza,
V. M. L. Durga Prasad Goli,
Matthew Whalen,
Xinhao Wang,
Zhijie Chen,
Huiqin Zhang,
Kai Liu,
Deep Jariwala,
M. Benjamin Jungfleisch,
Chitraleema Chakraborty,
Andrew F. May,
Michael A. McGuire,
Branislav K. Nikolic,
John Q. Xiao,
Mark J. H. Ku
Abstract:
Two-dimensional (2D) magnetic van der Waals materials provide a powerful platform for studying fundamental physics of low-dimensional magnetism, engineering novel magnetic phases, and enabling ultrathin and highly tunable spintronic devices. To realize high quality and practical devices for such applications, there is a critical need for robust 2D magnets with ordering temperatures above room temp…
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Two-dimensional (2D) magnetic van der Waals materials provide a powerful platform for studying fundamental physics of low-dimensional magnetism, engineering novel magnetic phases, and enabling ultrathin and highly tunable spintronic devices. To realize high quality and practical devices for such applications, there is a critical need for robust 2D magnets with ordering temperatures above room temperature that can be created via exfoliation. Here the study of exfoliated flakes of cobalt substituted Fe5GeTe2 (CFGT) exhibiting magnetism above room temperature is reported. Via quantum magnetic imaging with nitrogen-vacancy centers in diamond, ferromagnetism at room temperature was observed in CFGT flakes as thin as 16 nm. This corresponds to one of the thinnest room-temperature 2D magnet flakes exfoliated from robust single crystals, reaching a thickness relevant to practical spintronic applications. The Curie temperature Tc of CFGT ranges from 310 K in the thinnest flake studied to 328 K in the bulk. To investigate the prospect of high-temperature monolayer ferromagnetism, Monte Carlo calculations were performed which predicted a high value of Tc ~270 K in CFGT monolayers. Pathways towards further enhancing monolayer Tc are discussed. These results support CFGT as a promising platform to realize high-quality room-temperature 2D magnet devices.
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Submitted 14 June, 2022;
originally announced June 2022.
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Revealing room temperature ferromagnetism in exfoliated Fe$_5$GeTe$_2$ flakes with quantum magnetic imaging
Authors:
Hang Chen,
Shahidul Asif,
Matthew Whalen,
Jeyson Tamara-Isaza,
Brennan Luetke,
Yang Wang,
Xinhao Wang,
Millicent Ayako,
Saurabh Lamsal,
Andrew F. May,
Michael A. McGuire,
Chitraleema Chakraborty,
John Q. Xiao,
Mark J. H. Ku
Abstract:
Van der Waals material Fe$_5$GeTe$_2$, with its long-range ferromagnetic ordering near room temperature, has significant potential to become an enabling platform for implementing novel spintronic and quantum devices. To pave the way for applications, it is crucial to determine the magnetic properties when the thickness of Fe5GeTe2 reaches the few-layers regime. However, this is highly challenging…
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Van der Waals material Fe$_5$GeTe$_2$, with its long-range ferromagnetic ordering near room temperature, has significant potential to become an enabling platform for implementing novel spintronic and quantum devices. To pave the way for applications, it is crucial to determine the magnetic properties when the thickness of Fe5GeTe2 reaches the few-layers regime. However, this is highly challenging due to the need for a characterization technique that is local, highly sensitive, artifact-free, and operational with minimal fabrication. Prior studies have indicated that Curie temperature TC can reach up to close to room temperature for exfoliated Fe$_5$GeTe$_2$ flakes, as measured via electrical transport; there is a need to validate these results with a measurement that reveals magnetism more directly. In this work, we investigate the magnetic properties of exfoliated thin flakes of van der Waals magnet Fe$_5$GeTe$_2$ via a quantum magnetic imaging technique based on nitrogen vacancy diamond. Through imaging the stray fields, we confirm room-temperature magnetic order in Fe$_5$GeTe$_2$ thin flakes with thickness down to 7 units cell. The stray field patterns and their response to magnetizing fields with different polarities point to a perpendicular easy-axis anisotropy. Furthermore, we perform imaging at different temperatures and determine the Curie temperature of the flakes at Tc~300 K. These results provide the basis for realizing a room-temperature monolayer ferromagnet with Fe$_5$GeTe$_2$. This work also demonstrates that the imaging technique enables a rapid screening of multiple flakes simultaneously, thereby paving the way towards high throughput characterization of potential 2D magnets near room temperature.
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Submitted 20 March, 2022; v1 submitted 11 October, 2021;
originally announced October 2021.
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Mechanical Properties of Ultralow Density Graphene Oxide/Polydimethylsiloxane Foams
Authors:
Cristiano F. Woellner,
Peter S. Owuor,
Tong Li,
Soumya Vinod,
Sehmus Ozden,
Suppanat Kosolwattana,
Sanjit Bhowmick,
Luong X. Duy,
Rodrigo V. Salvatierra,
Bingqing Wei,
Syed A. S. Asif,
James M. Tour,
Robert Vajtai,
Jun Lou,
Douglas S. Galvao,
Chandra S. Tiwary,
Pulickel. M. Ajayan
Abstract:
Low-density, highly porous graphene/graphene oxide (GO) based-foams have shown high performance in energy absorption applications, even under high compressive deformations. In general, foams are very effective as energy dissipative materials and have been widely used in many areas such as automotive, aerospace and biomedical industries. In the case of graphene-based foams, the good mechanical prop…
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Low-density, highly porous graphene/graphene oxide (GO) based-foams have shown high performance in energy absorption applications, even under high compressive deformations. In general, foams are very effective as energy dissipative materials and have been widely used in many areas such as automotive, aerospace and biomedical industries. In the case of graphene-based foams, the good mechanical properties are mainly attributed to the intrinsic graphene and/or GO electronic and mechanical properties. Despite the attractive physical properties of graphene/GO based-foams, their structural and thermal stabilities are still a problem for some applications. For instance, they are easily degraded when placed in flowing solutions, either by the collapsing of their layers or just by structural disintegration into small pieces. Recently, a new and scalable synthetic approach to produce low-density 3D macroscopic GO structure interconnected with polydimethylsiloxane (PDMS) polymeric chains (pGO) was proposed. A controlled amount of PDMS is infused into the freeze-dried foam resulting into a very rigid structure with improved mechanical properties, such as tensile plasticity and toughness. The PDMS wets the graphene oxide sheets and acts like a glue bonding PDMS and GO sheets. In order to obtain further insights on mechanisms behind the enhanced mechanical pGO response we carried out fully atomistic molecular dynamics (MD) simulations. Based on MD results, we build up a structural model that can explain the experimentally observed mechanical behavior.
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Submitted 18 January, 2018;
originally announced January 2018.
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Differences in the Mechanical Properties of Monolayer and Multilayer WSe2/MoSe2
Authors:
Y. M. Jaques,
P. Manimunda,
Y. Nakanishi,
S. Susarla,
C. F. Woellner,
S. Bhowmick,
S. A. S. Asif,
D. S. Galvão,
C. S. Tiwary,
P. M. Ajayan
Abstract:
Transition metal dichalcogenides are 2D structures with remarkable electronic, chemical, optical and mechanical properties. Monolayer and crystal properties of these structures have been extensively investigated, but a detailed understanding of the properties of their few-layer structures are still missing. In this work we investigated the mechanical differences between monolayer and multilayer WS…
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Transition metal dichalcogenides are 2D structures with remarkable electronic, chemical, optical and mechanical properties. Monolayer and crystal properties of these structures have been extensively investigated, but a detailed understanding of the properties of their few-layer structures are still missing. In this work we investigated the mechanical differences between monolayer and multilayer WSe2 and MoSe2, through fully atomistic molecular dynamics simulations (MD). It was observed that single layer WSe2/MoSe2 deposited on silicon substrates have larger friction coefficients than 2, 3 and 4 layered structures. For all considered cases it is always easier to peel off and/or to fracture MoSe2 structures. These results suggest that the interactions between first layer and substrate are stronger than interlayer interactions themselves. Similar findings have been reported for other nanomaterials and it has been speculated whether this is a universal-like behavior for 2D layered materials. We have also analyzed fracture patterns. Our results show that fracture is chirality dependent with crack propagation preferentially perpendicular to W(Mo)-Se bonds and faster for zig-zag-like defects.
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Submitted 17 January, 2018;
originally announced January 2018.
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Atomically thin gallium layers from solid-melt exfoliation
Authors:
V. Kochat,
A. Samanta,
Y. Zhang,
S. Bhowmick,
P. Manimunda,
S. A. S. Asif,
A. Stender,
Robert Vajtai,
A. K. Singh,
C. S. Tiwary,
P. M. Ajayan
Abstract:
Among the large number of promising two-dimensional (2D) atomic layer crystals, true metallic layers are rare. Through combined theoretical and experimental approaches, we report on the stability and successful exfoliation of atomically thin gallenene sheets, having two distinct atomic arrangements along crystallographic twin directions of the parent alpha-gallium. Utilizing the weak interface bet…
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Among the large number of promising two-dimensional (2D) atomic layer crystals, true metallic layers are rare. Through combined theoretical and experimental approaches, we report on the stability and successful exfoliation of atomically thin gallenene sheets, having two distinct atomic arrangements along crystallographic twin directions of the parent alpha-gallium. Utilizing the weak interface between solid and molten phases of gallium, a solid-melt interface exfoliation technique is developed to extract these layers. Phonon dispersion calculations show that gallenene can be stabilized with bulk gallium lattice parameters. The electronic band structure of gallenene shows a combination of partially filled Dirac cone and the non-linear dispersive band near Fermi level suggesting that gallenene should behave as a metallic layer. Furthermore it is observed that strong interaction of gallenene with other 2D semiconductors induces semiconducting to metallic phase transitions in the latter paving the way for using gallenene as interesting metallic contacts in 2D devices.
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Submitted 26 April, 2017;
originally announced April 2017.
