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Liquid metal intercalation of epitaxial graphene: large-area gallenene layer fabrication through gallium self-propagation at ambient conditions
Authors:
S. Wundrack,
D. Momeni Pakdehi,
W. Dempwolf,
N. Schmidt,
K. Pierz,
L. Michaliszyn,
H. Spende,
A. Schmidt,
H. W. Schumacher,
R. Stosch,
A. Bakin
Abstract:
We demonstrate the fabrication of an ultra thin gallium film, also known as gallenene, beneath epitaxial graphene on 6H-SiC under ambient conditions triggered by liquid gallium intercalation. Gallenene has been fabricated using the liquid metal intercalation, achieving lateral intercalation and diffusion of Ga atoms at room temperature on square centimeter areas limited only by the graphene sample…
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We demonstrate the fabrication of an ultra thin gallium film, also known as gallenene, beneath epitaxial graphene on 6H-SiC under ambient conditions triggered by liquid gallium intercalation. Gallenene has been fabricated using the liquid metal intercalation, achieving lateral intercalation and diffusion of Ga atoms at room temperature on square centimeter areas limited only by the graphene samples' size. The stepwise self-propagation of the gallenene film below the epitaxial graphene surface on the macroscopic scale was observed by optical microscopy shortly after the initial processing without further physical or chemical treatment. Directional Ga diffusion of gallenene occurs on SiC terraces since the terrace steps form an energetic barrier (Ehrlich-Schwoebel barrier),retarding the gallenene propagation. The subsequent conversion of the epitaxial graphene into quasi free-standing bilayer graphene (QFBLG) and the graphene-gallenene heterostack interactions have been analyzed by XPS and Raman measurements. The results reveal a novel approach for controlled fabrication of wafer-scale gallenene as well as for two-dimensional heterostructures and stacks based on the interaction between liquid metal and epitaxial graphene.
Please note, this work was also titled as Graphene meets gallenene -- A straightforward approach to developing large-area heterostacks by gallium self-propagation https://www.researchgate.net/publication/333451130_Graphene_meets_gallenene_-_A_straightforward_approach_to_developing_large-area_heterostacks_by_gallium_self-propagation
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Submitted 16 July, 2020; v1 submitted 29 May, 2019;
originally announced May 2019.
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Homogeneous Large-area Quasi-freestanding Monolayer and Bilayer Graphene on SiC
Authors:
Davood Momeni Pakdehi,
Klaus Pierz,
Stefan Wundrack,
Johannes Aprojanz,
Thi Thuy Nhung Nguyen,
Thorsten Dziomba,
Frank Hohls,
Andrey Bakin,
Rainer Stosch,
Christoph Tegenkamp,
Franz J. Ahlers,
Hans W. Schumacher
Abstract:
In this study, we first show that the argon flow during epitaxial graphene growth is an important parameter to control the quality of the buffer and the graphene layer. Atomic force microscopy (AFM) and low-energy electron diffraction (LEED) measurements reveal that the decomposition of the SiC substrate strongly depends on the Ar mass flow rate while pressure and temperature are kept constant. Ou…
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In this study, we first show that the argon flow during epitaxial graphene growth is an important parameter to control the quality of the buffer and the graphene layer. Atomic force microscopy (AFM) and low-energy electron diffraction (LEED) measurements reveal that the decomposition of the SiC substrate strongly depends on the Ar mass flow rate while pressure and temperature are kept constant. Our data are interpreted by a model based on the competition of the SiC decomposition rate, controlled by the Ar flow, with a uniform graphene buffer layer formation under the equilibrium process at the SiC surface. The proper choice of a set of growth parameters allows the growth of defect-free, ultra-smooth and coherent graphene-free buffer layer and bilayer-free monolayer graphene sheets which can be transformed into large-area high-quality quasi-freestanding monolayer and bilayer graphene (QFMLG and QFBLG) by hydrogen intercalation. AFM, scanning tunneling microscopy (STM), Raman spectroscopy and electronic transport measurements underline the excellent homogeneity of the resulting quasi-freestanding layers. Electronic transport measurements in four-point probe configuration reveal a homogeneous low resistance anisotropy on both μm- and mm scales.
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Submitted 12 November, 2018;
originally announced November 2018.
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Tailoring the SiC surface - a morphology study on the epitaxial growth of graphene and its buffer layer
Authors:
Mattias Kruskopf,
Klaus Pierz,
Davood Momeni Pakdehi,
Stefan Wundrack,
Rainer Stosch,
Andrey Bakin,
Hans W. Schumacher
Abstract:
We investigate the growth of the graphene buffer layer and the involved step bunching behavior of the silicon carbide substrate surface using atomic force microscopy. The formation of local buffer layer domains are identified to be the origin of undesirably high step edges in excellent agreement with the predictions of a general model of step dynamics. The applied polymer-assisted sublimation grow…
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We investigate the growth of the graphene buffer layer and the involved step bunching behavior of the silicon carbide substrate surface using atomic force microscopy. The formation of local buffer layer domains are identified to be the origin of undesirably high step edges in excellent agreement with the predictions of a general model of step dynamics. The applied polymer-assisted sublimation growth method demonstrates that the key principle to suppress this behavior is the uniform nucleation of the buffer layer. In this way, the silicon carbide surface is stabilized such that ultra-flat surfaces can be conserved during graphene growth on a large variety of silicon carbide substrate surfaces. The analysis of the experimental results describes different growth modes which extend the current understanding of epitaxial graphene growth by emphasizing the importance of buffer layer nucleation and critical mass transport processes.
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Submitted 10 July, 2017; v1 submitted 26 April, 2017;
originally announced April 2017.
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Second harmonic generation spectroscopy of excitons in ZnO
Authors:
M. Lafrentz,
D. Brunne,
A. V. Rodina,
V. V. Pavlov,
R. V. Pisarev,
D. R. Yakovlev,
A. Bakin,
M. Bayer
Abstract:
Nonlinear optics of semiconductors is an important field of fundamental and applied research, but surprisingly the role of excitons in the coherent processes leading to harmonics generation has remained essentially unexplored. Here we report results of a comprehensive experimental and theoretical study of the three-photon process of optical second harmonic generation (SHG) involving the exciton re…
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Nonlinear optics of semiconductors is an important field of fundamental and applied research, but surprisingly the role of excitons in the coherent processes leading to harmonics generation has remained essentially unexplored. Here we report results of a comprehensive experimental and theoretical study of the three-photon process of optical second harmonic generation (SHG) involving the exciton resonances of the noncentrosymmetric hexagonal wide-band-gap semiconductor ZnO in the photon energy range of 3.2-3.5 eV. Resonant crystallographic SHG is observed for the 1s(A,B), 2s(A,B), 2p(A,B), and 1s(C) excitons. We show that strong SHG signals at these exciton resonances are induced by the application of a magnetic field when the incident and the SHG light wave vectors are along the crystal z-axis where the crystallographic SHG response vanishes. A microscopic theory of SHG generation through excitons is developed, which shows that the nonlinear interaction of coherent light with excitons has to be considered beyond the electric-dipole approximation. Depending on the particular symmetry of the exciton states SHG can originate from the electric- and magnetic-field-induced perturbations of the excitons due to the Stark effect, the spin as well as orbital Zeeman effects, or the magneto-Stark effect. The importance of each mechanism is analyzed and discussed by confronting experimental data and theoretical results for the dependencies of the SHG signals on photon energy, magnetic field, electric field, crystal temperature, and light polarization. Good agreement is obtained between experiment and theory proving the validity of our approach to the complex problem of nonlinear interaction of light with ZnO excitons. This general approach can be applied also to other semiconductors.
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Submitted 28 August, 2013;
originally announced August 2013.
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Spin noise spectroscopy of donor bound electrons in ZnO
Authors:
H. Horn,
A. Balocchi,
X. Marie,
A. Bakin,
A. Waag,
M. Oestreich,
J. Hübner
Abstract:
We investigate the intrinsic spin dynamics of electrons bound to Al impurities in bulk ZnO by optical spin noise spectroscopy. Spin noise spectroscopy enables us to investigate the longitudinal and transverse spin relaxation time with respect to nuclear and external magnetic fields in a single spectrum. On one hand, the spin dynamic is dominated by the intrinsic hyperfine interaction with the nucl…
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We investigate the intrinsic spin dynamics of electrons bound to Al impurities in bulk ZnO by optical spin noise spectroscopy. Spin noise spectroscopy enables us to investigate the longitudinal and transverse spin relaxation time with respect to nuclear and external magnetic fields in a single spectrum. On one hand, the spin dynamic is dominated by the intrinsic hyperfine interaction with the nuclear spins of the naturally occurring $^{67}$Zn isotope. We measure a typical spin dephasing time of 23 ns in agreement with the expected theoretical values. On the other hand, we measure a third, very high spin dephasing rate which is attributed to a high defect density of the investigated ZnO material. Measurements of the spin dynamics under the influence of transverse as well as longitudinal external magnetic fields unambiguously reveal the intriguing connections of the electron spin with its nuclear and structural environment.
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Submitted 25 September, 2012;
originally announced September 2012.
