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Crossover from non-thermal to thermal photoluminescence from metals excited by ultrashort light pulses
Authors:
Y. Sivan,
I. W. Un,
I. Kalyan,
K. -Q. Lin,
J. M. Lupton,
S. Bange
Abstract:
Photoluminescence from metal nanostructures following intense ultrashort illumination is a fundamental aspect of light-matter interactions. Surprisingly, many of its basic characteristics are under ongoing debate. Here, we resolve many of these debates by providing a comprehensive theoretical framework that describes this phenomenon, and support it by experimental confirmation. Specifically, we id…
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Photoluminescence from metal nanostructures following intense ultrashort illumination is a fundamental aspect of light-matter interactions. Surprisingly, many of its basic characteristics are under ongoing debate. Here, we resolve many of these debates by providing a comprehensive theoretical framework that describes this phenomenon, and support it by experimental confirmation. Specifically, we identify aspects of the emission that are characteristic to either non-thermal or thermal emission, in particular, differences in the spectral and electric field-dependence of these two contributions to the emission. Overall, non-thermal emission is characteristic of the early stages of light emission, while the later stages show thermal characteristics. The former dominate only for moderately high illumination intensities for which the electron temperature reached after thermalization remains close to room temperature. The theory is complemented by experimental evidence that demonstrates the novel aspects of our considerations.
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Submitted 19 April, 2023; v1 submitted 15 February, 2023;
originally announced February 2023.
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Twist-angle engineering of excitonic quantum interference and optical nonlinearities in stacked 2D semiconductors
Authors:
Kai-Qiang Lin,
Paulo E. Faria Junior,
Jonas M. Bauer,
Bo Peng,
Bartomeu Monserrat,
Martin Gmitra,
Jaroslav Fabian,
Sebastian Bange,
John M. Lupton
Abstract:
Twist-engineering of the electronic structure of van-der-Waals layered materials relies predominantly on band hybridization between layers. Band-edge states in transition-metal-dichalcogenide semiconductors are localized around the metal atoms at the center of the three-atom layer and are therefore not particularly susceptible to twisting. Here, we report that high-lying excitons in bilayer WSe2 c…
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Twist-engineering of the electronic structure of van-der-Waals layered materials relies predominantly on band hybridization between layers. Band-edge states in transition-metal-dichalcogenide semiconductors are localized around the metal atoms at the center of the three-atom layer and are therefore not particularly susceptible to twisting. Here, we report that high-lying excitons in bilayer WSe2 can be tuned over 235 meV by twisting, with a twist-angle susceptibility of 8.1 meV/°, an order of magnitude larger than that of the band-edge A-exciton. This tunability arises because the electronic states associated with upper conduction bands delocalize into the chalcogenide atoms. The effect gives control over excitonic quantum interference, revealed in selective activation and deactivation of electromagnetically induced transparency (EIT) in second-harmonic generation. Such a degree of freedom does not exist in conventional dilute atomic-gas systems, where EIT was originally established, and allows us to shape the frequency dependence, i.e. the dispersion, of the optical nonlinearity.
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Submitted 22 February, 2021;
originally announced February 2021.
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Large-scale mapping of moiré superlattices by Raman imaging of interlayer breathing mode and moiré phonons
Authors:
Kai-Qiang Lin,
Johannes Holler,
Jonas M. Bauer,
Marten Scheuck,
Bo Peng,
Tobias Korn,
Sebastian Bange,
John M. Lupton,
Christian Schüller
Abstract:
Moiré superlattices can induce correlated-electronic phases in twisted van-der-Waals materials. Strongly correlated quantum phenomena emerge, such as superconductivity and the Mott-insulating state. However, moiré superlattices produced through artificial stacking can be quite inhomogeneous, which hampers the development of a clear correlation between the moiré period and the emerging electrical a…
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Moiré superlattices can induce correlated-electronic phases in twisted van-der-Waals materials. Strongly correlated quantum phenomena emerge, such as superconductivity and the Mott-insulating state. However, moiré superlattices produced through artificial stacking can be quite inhomogeneous, which hampers the development of a clear correlation between the moiré period and the emerging electrical and optical properties. Here we demonstrate in twisted-bilayer transition-metal dichalcogenides that low-frequency Raman scattering can be utilized not only to detect atomic reconstruction, but also to map out the inhomogeneity of the moiré lattice over large areas. The method is established based on the finding that both the interlayer-breathing mode and moiré phonons are highly susceptible to the moiré period and provide characteristic fingerprints. We visualize microscopic domains with an effective twist-angle resolution of ~0.1°. This ambient non-invasive methodology can be conveniently implemented to characterize and preselect high-quality areas of samples for subsequent device fabrication, and for transport and optical experiments.
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Submitted 26 December, 2020;
originally announced December 2020.
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Complete polarization of electronic spins in OLEDs
Authors:
Tobias Scharff,
Wolfram Ratzke,
Jonas Zipfel,
Philippe Klemm,
Sebastian Bange,
John M. Lupton
Abstract:
At low temperatures and high magnetic fields, electron and hole spins in an organic light-emitting diode (OLED) become polarized so that recombination preferentially forms molecular triplet excited-state species. For low device currents, magnetoelectroluminescence (MEL) perfectly follows Boltzmann activation, implying a virtually complete polarization outcome. As the current increases, the MEL eff…
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At low temperatures and high magnetic fields, electron and hole spins in an organic light-emitting diode (OLED) become polarized so that recombination preferentially forms molecular triplet excited-state species. For low device currents, magnetoelectroluminescence (MEL) perfectly follows Boltzmann activation, implying a virtually complete polarization outcome. As the current increases, the MEL effect is reduced because spin polarization is suppressed by the reduction in carrier residence time within the device. Under these conditions, an additional field-dependent process affecting the spin-dependent recombination emerges, which appears to relate to the build-up of triplet excitons and the interaction with free charge carriers. Suppression of the EL at high fields on its own does not, strictly, prove electronic spin polarization. We therefore probe changes in the spin statistics of recombination directly in a dual singlettriplet emitting OLED, which shows a concomitant rise in phosphorescence intensity as fluorescence is suppressed. Finite spin-orbit coupling in these materials gives rise to a microscopic distribution in effective g factors of electrons and holes, $Δg$, i.e. a distribution in Larmor frequencies, leading to singlet-triplet mixing within the electronhole pair as a function of applied field. This $Δg$ effect in the pair further suppresses singlet-exciton formation in addition to thermal spin polarization of the individual carriers. Since the $Δg$ process involves weakly bound carrier pairs rather than free electrons and holes, in contrast to thermal spin polarization, the effect does not depend significantly on current or temperature.
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Submitted 16 October, 2020;
originally announced October 2020.
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Floquet spin states in OLEDs
Authors:
S. Jamali,
V. V. Mkhitaryan,
H. Malissa,
A. Nahlawi,
H. Popli,
T. Grünbaum,
S. Bange,
S. Milster,
D. Stoltzfus,
A. E. Leung,
T. A. Darwish,
P. L. Burn,
J. M. Lupton,
C. Boehme
Abstract:
Weakly spin-orbit coupled electron and hole spins in organic light-emitting diodes (OLEDs) constitute near-perfect two-level systems to explore the interaction of light and matter in the ultrastrong-drive regime. Under such highly non-perturbative conditions, the frequency at which the spin oscillates between states, the Rabi frequency, becomes comparable to its natural resonance frequency, the La…
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Weakly spin-orbit coupled electron and hole spins in organic light-emitting diodes (OLEDs) constitute near-perfect two-level systems to explore the interaction of light and matter in the ultrastrong-drive regime. Under such highly non-perturbative conditions, the frequency at which the spin oscillates between states, the Rabi frequency, becomes comparable to its natural resonance frequency, the Larmor frequency. For such conditions, we develop an intuitive understanding of the emergence of hybrid light-matter states, illustrating how dipole-forbidden multiple-quantum transitions at integer and fractional g-factors arise. A rigorous theoretical treatment of the phenomena comes from a Floquet-style solution to the time-dependent Hamiltonian of the electron-hole spin pair under resonant drive. To probe these phenomena experimentally requires both the development of a magnetic-resonance setup capable of supporting oscillating driving fields comparable in magnitude to the static field defining the Zeeman splitting; and an organic semiconductor which is characterized by minimal inhomogeneous broadening so as to allow the non-linear light-matter interactions to be resolved. The predicted exotic resonance features associated with the Floquet states are indeed found experimentally in measurements of spin-dependent steady-state OLED current under resonant drive, demonstrating that complex hybrid light-matter spin excitations can be formed and probed at room temperature. The spin-Dicke state arising under strong drive is insensitive to power broadening so that the Bloch-Siegert shift of the resonance becomes apparent, implying long coherence times of the dressed spin state with potential applicability for quantum sensing.
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Submitted 5 October, 2020;
originally announced October 2020.
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Bright excitons with negative-mass electrons
Authors:
Kai-Qiang Lin,
Chin Shen Ong,
Sebastian Bange,
Paulo E. Faria Junior,
Bo Peng,
Jonas D. Ziegler,
Jonas Zipfel,
Christian Bäuml,
Nicola Paradiso,
Kenji Watanabe,
Takashi Taniguchi,
Christoph Strunk,
Bartomeu Monserrat,
Jaroslav Fabian,
Alexey Chernikov,
Diana Y. Qiu,
Steven G. Louie,
John M. Lupton
Abstract:
Bound electron-hole excitonic states are generally not expected to form with charges of negative effective mass. We identify such excitons in a single layer of the semiconductor WSe2, where they give rise to narrow-band upconverted photoluminescence in the UV, at an energy of 1.66 eV above the first band-edge excitonic transition. Negative band curvature and strong electron-phonon coupling result…
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Bound electron-hole excitonic states are generally not expected to form with charges of negative effective mass. We identify such excitons in a single layer of the semiconductor WSe2, where they give rise to narrow-band upconverted photoluminescence in the UV, at an energy of 1.66 eV above the first band-edge excitonic transition. Negative band curvature and strong electron-phonon coupling result in a cascaded phonon progression with equidistant peaks in the photoluminescence spectrum, resolvable to ninth order. Ab initio GW-BSE calculations with full electron-hole correlations unmask and explain the admixture of upper conduction-band states to this complex many-body excitation: an optically bright, bound exciton in resonance with the semiconductor continuum. This exciton is responsible for atomic-like quantum-interference phenomena such as electromagnetically induced transparency. Since band curvature can be tuned by pressure or strain, synthesis of exotic quasiparticles such as flat-band excitons with infinite reduced mass becomes feasible.
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Submitted 25 June, 2020;
originally announced June 2020.
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Perdeuteration of poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (d-MEHPPV): control of microscopic charge-carrier spin-spin coupling and of magnetic-field effects in optoelectronic devices
Authors:
Dani M. Stoltzfus,
Gajadhar Joshi,
Henna Popli,
Shirin Jamali,
Marzieh Kavand,
Sebastian Milster,
Tobias Grünbaum,
Sebastian Bange,
Adnan Nahlawi,
Mandefro Y. Teferi,
Sabastian I. Atwood,
Anna E. Leung,
Tamim A. Darwish,
Hans Malissa,
Paul L. Burn,
John M. Lupton,
Christoph Boehme
Abstract:
Control of the effective local hyperfine fields in a conjugated polymer, poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEHPPV), by isotopic engineering is reported. These fields, evident as a frequency-independent line broadening mechanism in electrically detected magnetic resonance spectroscopy (EDMR), originate from the unresolved hyperfine coupling between the electronic spin of c…
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Control of the effective local hyperfine fields in a conjugated polymer, poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEHPPV), by isotopic engineering is reported. These fields, evident as a frequency-independent line broadening mechanism in electrically detected magnetic resonance spectroscopy (EDMR), originate from the unresolved hyperfine coupling between the electronic spin of charge carrier pairs and the nuclear spins of surrounding hydrogen isotopes. The room temperature study of effects caused by complete deuteration of this polymer through magnetoresistance, magnetoelectroluminescence, coherent pulsed and multi-frequency EDMR, as well as inverse spin-Hall effect measurements, confirm the weak hyperfine broadening of charge carrier magnetic resonance lines. As a consequence, we can resolve coherent charge-carrier spin-beating, allowing for direct measurements of the magnitude of electronic spin-spin interactions. In addition, the weak hyperfine coupling allows us to resolve substantial spin-orbit coupling effects in EDMR spectra, even at low magnetic field strengths. These results illustrate the dramatic influence of hyperfine fields on the spin physics of organic light-emitting diode (OLED) materials at room temperature, and point to routes to reaching exotic ultra-strong resonant-drive regimes needed for the study of light-matter interactions.
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Submitted 26 September, 2019;
originally announced September 2019.
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OLEDs as models for bird magnetoception: detecting electron spin resonance in geomagnetic fields
Authors:
Tobias Grünbaum,
Sebastian Milster,
Hermann Kraus,
Wolfram Ratzke,
Simon Kurrmann,
Viola Zeller,
Sebastian Bange,
Christoph Boehme,
John M. Lupton
Abstract:
Certain species of living creatures are known to orientate themselves in the geomagnetic field. Given the small magnitude of approximately 48 μT, the underlying quantum mechanical phenomena are expected to exhibit coherence times approaching the millisecond regime. In this contribution, we show sensitivity of organic light-emitting diodes (OLEDs) to magnetic fields far below Earth's magnetic field…
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Certain species of living creatures are known to orientate themselves in the geomagnetic field. Given the small magnitude of approximately 48 μT, the underlying quantum mechanical phenomena are expected to exhibit coherence times approaching the millisecond regime. In this contribution, we show sensitivity of organic light-emitting diodes (OLEDs) to magnetic fields far below Earth's magnetic field, suggesting that coherence times of the spins of charge-carrier pairs in these devices can be similarly long. By electron paramagnetic resonance (EPR) experiments, a lower bound for the coherence time can be assessed directly. Moreover, this technique offers the possibility to determine the distribution of hyperfine fields within the organic semiconductor layer. We extend this technique to a material system exhibiting both fluorescence and phosphorescence, demonstrating stable anticorrelation between optically detected magnetic resonance (ODMR) spectra in the singlet (fluorescence) and triplet (phosphorescence) channel. The experiments demonstrate the extreme sensitivity of OLEDs to both static as well as dynamic magnetic fields and suggest that coherent spin precession processes of Coulombically bound electron spin pairs may play a crucial role in the magnetoreceptive ability of living creatures.
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Submitted 7 June, 2019;
originally announced June 2019.
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Quantum interference in second-harmonic generation from monolayer WSe2
Authors:
Kai-Qiang Lin,
Sebastian Bange,
John M. Lupton
Abstract:
A hallmark of wave-matter duality is the emergence of quantum-interference phenomena when an electronic transition follows different trajectories. Such interference results in asymmetric absorption lines such as Fano resonances, and gives rise to secondary effects like electromagnetically induced transparency (EIT) when multiple optical transitions are pumped. Few solid-state systems show quantum…
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A hallmark of wave-matter duality is the emergence of quantum-interference phenomena when an electronic transition follows different trajectories. Such interference results in asymmetric absorption lines such as Fano resonances, and gives rise to secondary effects like electromagnetically induced transparency (EIT) when multiple optical transitions are pumped. Few solid-state systems show quantum interference and EIT, with quantum-well intersubband transitions in the IR offering the most promising avenue to date to devices exploiting optical gain without inversion. Quantum interference is usually hampered by inhomogeneous broadening of electronic transitions, making it challenging to achieve in solids at visible wavelengths and elevated temperatures. However, disorder effects can be mitigated by raising the oscillator strength of atom-like electronic transitions - excitons - which arise in monolayers of transition-metal dichalcogenides (TMDCs). Quantum interference, probed by second-harmonic generation (SHG), emerges in monolayer WSe2, without a cavity, splitting the SHG spectrum. The splitting exhibits spectral anticrossing behaviour, and is related to the number of Rabi flops the strongly driven system undergoes. The SHG power-law exponent deviates strongly from the canonical value of 2, showing a Fano-like wavelength dependence which is retained at room temperature. The work opens opportunities in solid-state quantum-nonlinear optics for optical mixing, gain without inversion and quantum-information processing.
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Submitted 23 November, 2018;
originally announced November 2018.
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Light emission from gold nanoparticles under ultrafast near-infrared excitation: thermal emission, inelastic light scattering or multiphoton luminescence?
Authors:
Lukas Roloff,
Philippe Klemm,
Imke Gronwald,
Rupert Huber,
John M. Lupton,
Sebastian Bange
Abstract:
Gold nanoparticles emit broad-band upconverted luminescence upon irradiation with pulsed infrared laser radiation. Although the phenomenon is widely observed, considerable disagreement still exists concerning the underlying physics - most notably over the applicability of concepts such as multiphoton absorption, inelastic scattering, and interband and intraband electronic transitions. Here, we stu…
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Gold nanoparticles emit broad-band upconverted luminescence upon irradiation with pulsed infrared laser radiation. Although the phenomenon is widely observed, considerable disagreement still exists concerning the underlying physics - most notably over the applicability of concepts such as multiphoton absorption, inelastic scattering, and interband and intraband electronic transitions. Here, we study single particles and small clusters of particles by employing a spectrally resolved power-law analysis of the irradiation-dependent emission as a sensitive probe of these physical models. Two regimes of emission are identified: at low irradiance levels of kW/cm2, the emission follows a well-defined integer-exponent power law suggestive of a multiphoton process. However, at higher irradiance levels of several kW/cm2, the nonlinearity exponent itself depends on the photon energy detected, a tell-tale signature of a radiating heated electron gas. We show that in this regime, the experiments are incompatible with both interband transitions and inelastic light scattering as the cause the luminescence, while they are compatible with the notion of luminescence linked to intraband transitions.
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Submitted 13 February, 2018;
originally announced February 2018.
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Characterization of highly crystalline lead iodide nanosheets prepared by room-temperature solution processing
Authors:
Riccardo Frisenda,
Joshua O. Island,
Jose L. Lado,
Emerson Giovanelli,
Patricia Gant,
Philipp Nagler,
Sebastian Bange,
John M. Lupton,
Christian Schüller,
Aday Molina-Mendoza,
Lucia Aballe,
Michael Foerster,
Tobias Korn,
Miguel Angel Niño,
David Perez de Lara,
Emilio M. Pérez,
Joaquín Fernandéz-Rossier,
Andres Castellanos-Gomez
Abstract:
Two-dimensional semiconducting materials are particularly appealing for many applications. Although theory predicts a large number of two-dimensional materials, experimentally only a few of these materials have been identified and characterized comprehensively in the ultrathin limit. Lead iodide, which belongs to the transition metal halides family and has a direct bandgap in the visible spectrum,…
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Two-dimensional semiconducting materials are particularly appealing for many applications. Although theory predicts a large number of two-dimensional materials, experimentally only a few of these materials have been identified and characterized comprehensively in the ultrathin limit. Lead iodide, which belongs to the transition metal halides family and has a direct bandgap in the visible spectrum, has been known for a long time and has been well characterized in its bulk form. Nevertheless, studies of this material in the nanometer thickness regime are rather scarce. In this article we demonstrate an easy way to synthesize ultrathin, highly crystalline flakes of PbI2 by precipitation from a solution in water. We thoroughly characterize the produced thin flakes with different techniques ranging from optical and Raman spectros-copy to temperature-dependent photoluminescence and electron microscopy. We compare the results to ab initio calculations of the band structure of the material. Finally, we fabricate photodetectors based on PbI2 and study their optoelectronic properties.
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Submitted 10 October, 2017;
originally announced October 2017.
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Spectral focusing of broadband silver electroluminescence in nanoscopic FRET-LEDs
Authors:
Robin P. Puchert,
Florian Steiner,
Gerd Plechinger,
Felix Hofmann,
Ines Caspers,
Johanna Kirschner,
Philipp Nagler,
Alexey Chernikov,
Christian Schüller,
Tobias Korn,
Jan Vogelsang,
Sebastian Bange,
John M. Lupton
Abstract:
Few inventions have shaped the world like the incandescent bulb. While Edison used thermal radiation from ohmically heated conductors, some noble metals exhibit "cold" electroluminescence (EL) in percolation films, tunnel diodes, electromigrated nanoparticle aggregates, optical antennae, or scanning-tunnelling microscopy (STM). The origin of this radiation, which is spectrally broad and depends on…
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Few inventions have shaped the world like the incandescent bulb. While Edison used thermal radiation from ohmically heated conductors, some noble metals exhibit "cold" electroluminescence (EL) in percolation films, tunnel diodes, electromigrated nanoparticle aggregates, optical antennae, or scanning-tunnelling microscopy (STM). The origin of this radiation, which is spectrally broad and depends on applied bias, is controversial given the low radiative yields of electronic transitions. Nanoparticle EL is particularly intriguing since it involves localized surface-plasmon resonances with large dipole moments. Such plasmons enable very efficient non-radiative fluorescence resonance energy transfer (FRET) coupling to proximal resonant dipole transitions. We demonstrate nanoscopic FRET-LEDs which exploit the opposite process, energy transfer from silver nanoparticles to exfoliated monolayers of transition-metal dichalcogenides (TMDCs). In diffraction-limited hotspots showing pronounced photon bunching, broadband silver EL is focused into the narrow excitonic resonance of the atomically thin overlayer. Such devices may offer alternatives to conventional nano-LEDs in on-chip optical interconnects.
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Submitted 13 February, 2017;
originally announced February 2017.
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Exciton Localization in Extended π-electron Systems: Comparison of Linear and Cyclic Structures
Authors:
Alexander Thiessen,
Dominik Würsch,
Stefan-S. Jester,
A. Vikas Aggarwal,
Alissa Idelson,
Sebastian Bange,
Jan Vogelsang,
Sigurd Höger,
John M. Lupton
Abstract:
We employ five π-conjugated model materials of different molecular shape --- oligomers and cyclic structures --- to investigate the extent of exciton self-trapping and torsional motion of the molecular framework following optical excitation. Our studies combine steady-state and transient fluorescence spectroscopy in the ensemble with measurements of polarization anisotropy on single molecules, sup…
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We employ five π-conjugated model materials of different molecular shape --- oligomers and cyclic structures --- to investigate the extent of exciton self-trapping and torsional motion of the molecular framework following optical excitation. Our studies combine steady-state and transient fluorescence spectroscopy in the ensemble with measurements of polarization anisotropy on single molecules, supported by Monte Carlo simulations. The dimer exhibits a significant spectral red-shift within $\sim$ 100 ps after photoexcitation which is attributed to torsional relaxation. This relaxation mechanism is inhibited in the structurally rigid macrocyclic analogue. However, both systems show a high degree of exciton localization but with very different consequences: while in the macrocycle the exciton localizes randomly on different parts of the ring, scrambling polarization memory, in the dimer, localization leads to a deterministic exciton position with luminescence characteristics of a dipole. Monte Carlo simulations allow us to quantify the structural difference between the emitting and absorbing units of the π-conjugated system in terms of disorder parameters.
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Submitted 17 June, 2015;
originally announced June 2015.
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Charge mobility determination by current extraction under linear increasing voltages: the case of non-equilibrium charges and field-dependent mobilities
Authors:
Sebastian Bange,
Marcel Schubert,
Dieter Neher
Abstract:
The method of current extraction under linear increasing voltages (CELIV) allows for the simultaneous determination of charge mobilities and charge densities directly in thin films as used in organic photovoltaic cells (OPV). In the past, it has been specifically applied to investigate the interrelation of microstructure and charge transport properties in such systems. Numerical and analytical c…
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The method of current extraction under linear increasing voltages (CELIV) allows for the simultaneous determination of charge mobilities and charge densities directly in thin films as used in organic photovoltaic cells (OPV). In the past, it has been specifically applied to investigate the interrelation of microstructure and charge transport properties in such systems. Numerical and analytical calculations presented in this work show that the evaluation of CELIV transients with the commonly used analysis scheme is error prone once charge recombination and, possibly, field dependent charge mobilities are taken into account. The most important effects are an apparent time-dependence of charge mobilities and errors in the determined field dependencies. Our results implicate that reports on time-dependent mobility relaxation in OPV materials obtained by the CELIV technique should be carefully revisited and confirmed by other measurement methods.
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Submitted 9 July, 2009;
originally announced July 2009.