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Vesicle formation induced by thermal fluctuations
Authors:
Andreu F. Gallen,
J. Roberto Romero-Arias,
Rafael A. Barrio,
Aurora Hernandez-Machado
Abstract:
The process of fission and vesicle formation depends on the geometry of the membrane that will split. For instance, a flat surface finds it difficult to form vesicles because of the lack of curved regions where to start the process. Here we show that vesicle formation can be promoted by temperature, by using a membrane phase field model with Gaussian curvature. We find a phase transition between f…
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The process of fission and vesicle formation depends on the geometry of the membrane that will split. For instance, a flat surface finds it difficult to form vesicles because of the lack of curved regions where to start the process. Here we show that vesicle formation can be promoted by temperature, by using a membrane phase field model with Gaussian curvature. We find a phase transition between fluctuating and vesiculation phases that depends on temperature, spontaneous curvature, and the ratio between bending and Gaussian moduli. We analysed the energy dynamical behaviour of these processes and found that the main driving ingredient is the Gaussian energy term, although the curvature energy term usually helps with the process as well. We also found that the chemical potential can be used to investigate the temperature of the system. Finally we address how temperature changes the condition for spontaneous vesiculation for all geometries, making it happen in a wider range of values of the Gaussian modulus.
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Submitted 13 March, 2023; v1 submitted 14 July, 2022;
originally announced July 2022.
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Dynamical properties of hierarchical networks of Van Der Pol oscillators
Authors:
Daniel Monsivais,
Kunal Bhattacharya,
Rafael A. Barrio,
Philip K. Maini,
Kimmo K. Kaski
Abstract:
Oscillator networks found in social and biological systems are characterized by the presence of wide ranges of coupling strengths and complex organization. Yet robustness and synchronization of oscillations are found to emerge on macro-scales that eventually become key to the functioning of these systems. In order to model this kind of dynamics observed, for example, in systems of circadian oscill…
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Oscillator networks found in social and biological systems are characterized by the presence of wide ranges of coupling strengths and complex organization. Yet robustness and synchronization of oscillations are found to emerge on macro-scales that eventually become key to the functioning of these systems. In order to model this kind of dynamics observed, for example, in systems of circadian oscillators, we study networks of Van der Pol oscillators that are connected with hierarchical couplings. For each isolated oscillator we assume the same fundamental frequency. Using numerical simulations, we show that the coupled system goes to a phase-locked state, with both phase and frequency being the same for every oscillator at each level of the hierarchy. The observed frequency at each level of the hierarchy changes, reaching an asymptotic lowest value at the uppermost level. Notably, the asymptotic frequency can be tuned to any value below the fundamental frequency of an uncoupled Van der Pol oscillator. We compare the numerical results with those of an approximate analytic solution and find them to be in qualitative agreement.
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Submitted 16 December, 2019; v1 submitted 10 September, 2019;
originally announced September 2019.
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The two gap transitions in Ge$_{1-x}$Sn$_x$: effect of non-substitutional complex defects
Authors:
J. D. Querales-Flores,
C. I. Ventura,
J. D. Fuhr,
R. A. Barrio
Abstract:
The existence of non-substitutional $β$-Sn defects in Ge$_{1-x}$Sn$_{x}$ was confirmed by emission channeling experiments [Decoster et al., Phys. Rev. B 81, 155204 (2010)], which established that although most Sn enters substitutionally ($α$-Sn) in the Ge lattice, a second significant fraction corresponds to the Sn-vacancy defect complex in the split-vacancy configuration ( $β$-Sn ), in agreement…
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The existence of non-substitutional $β$-Sn defects in Ge$_{1-x}$Sn$_{x}$ was confirmed by emission channeling experiments [Decoster et al., Phys. Rev. B 81, 155204 (2010)], which established that although most Sn enters substitutionally ($α$-Sn) in the Ge lattice, a second significant fraction corresponds to the Sn-vacancy defect complex in the split-vacancy configuration ( $β$-Sn ), in agreement with our previous theoretical study [Ventura et al., Phys. Rev. B 79, 155202 (2009)]. Here, we present our electronic structure calculation for Ge$_{1-x}$Sn$_{x}$, including substitutional $α$-Sn as well as non-substitutional $β$-Sn defects. To include the presence of non-substitutional complex defects in the electronic structure calculation for this multi-orbital alloy problem, we extended the approach for the purely substitutional alloy by Jenkins and Dow [Jenkins and Dow, Phys. Rev. B 36, 7994 (1987)]. We employed an effective substitutional two-site cluster equivalent to the real non-substitutional $β$-Sn defect, which was determined by a Green's functions calculation. We then calculated the electronic structure of the effective alloy purely in terms of substitutional defects, embedding the effective substitutional clusters in the lattice. Our results describe the two transitions of the fundamental gap of Ge$_{1-x}$Sn$_{x}$ as a function of the total Sn-concentration: namely from an indirect to a direct gap, first, and the metallization transition at higher $x$. They also highlight the role of $β$-Sn in the reduction of the concentration range which corresponds to the direct-gap phase of this alloy, of interest for optoelectronics applications.
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Submitted 15 March, 2016;
originally announced March 2016.
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Non-substitutional single-atom defects in the Ge_(1-x)Sn_x alloy
Authors:
C. I. Ventura,
J. D. Fuhr,
R. A. Barrio
Abstract:
Ge_(1-x)Sn_x alloys have proved difficult to form at large x, contrary to what happens with other group IV semiconductor combinations. However, at low x they are typical examples of well-behaved substitutional compounds, which is desirable for harnessing the electronic properties of narrow band semiconductors. In this paper, we propose the appearance of another kind of single-site defect (…
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Ge_(1-x)Sn_x alloys have proved difficult to form at large x, contrary to what happens with other group IV semiconductor combinations. However, at low x they are typical examples of well-behaved substitutional compounds, which is desirable for harnessing the electronic properties of narrow band semiconductors. In this paper, we propose the appearance of another kind of single-site defect ($β-Sn$), consisting of a single Sn atom in the center of a Ge divacancy, that may account for these facts. Accordingly, we examine the electronic and structural properties of these alloys by performing extensive numerical ab-initio calculations around local defects. The results show that the environment of the $β$ defect relaxes towards a cubic octahedral configuration, facilitating the nucleation of metallic white tin and its segregation, as found in amorphous samples. Using the information stemming from these local defect calculations, we built a simple statistical model to investigate at which concentration these $β$ defects can be formed in thermal equilibrium. These results agree remarkably well with experimental findings, concerning the critical concentration above which the homogeneous alloys cannot be formed at room temperature. Our model also predicts the observed fact that at lower temperature the critical concentration increases. We also performed single site effective-field calculations of the electronic structure, which further support our hypothesis.
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Submitted 31 July, 2008;
originally announced July 2008.
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Dimensionality effects in Turing pattern formation
Authors:
Teemu Leppanen,
Mikko Karttunen,
Kimmo Kaski,
Rafael A. Barrio
Abstract:
The problem of morphogenesis and Turing instability are revisited from the point of view of dimensionality effects. First the linear analysis of a generic Turing model is elaborated to the case of multiple stationary states, which may lead the system to bistability. The difference between two- and three-dimensional pattern formation with respect to pattern selection and robustness is discussed.…
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The problem of morphogenesis and Turing instability are revisited from the point of view of dimensionality effects. First the linear analysis of a generic Turing model is elaborated to the case of multiple stationary states, which may lead the system to bistability. The difference between two- and three-dimensional pattern formation with respect to pattern selection and robustness is discussed. Preliminary results concerning the transition between quasi-two-dimensional and three-dimensional structures are presented and their relation to experimental results are addressed.
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Submitted 5 June, 2003;
originally announced June 2003.
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Connectivity of Turing structures
Authors:
Teemu Leppanen,
Mikko Karttunen,
R. A. Barrio,
Kimmo Kaski
Abstract:
It is well-known that in two dimensions Turing systems produce spots, stripes and labyrinthine patterns, and in three dimensions lamellar and spherical structures or their combinations are observed. We study transitions between these states in both two and three dimensions by first analytically deriving a control parameter and a scaling function for the number of clusters. Then, we apply large s…
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It is well-known that in two dimensions Turing systems produce spots, stripes and labyrinthine patterns, and in three dimensions lamellar and spherical structures or their combinations are observed. We study transitions between these states in both two and three dimensions by first analytically deriving a control parameter and a scaling function for the number of clusters. Then, we apply large scale computer simulations to study the effect of nonlinearities on clustering, the appearance of topological defects and morphological changes in Turing structures. In the two-dimensional real space spotty structures we find some evidence of twin domain formation, of the kind seen in crystalline materials. With the help of reciprocal space analysis we find indication of other more general forms of order accommodation, i.e., eutactic local structures. Also a mechanism for the observed ``connectivity transition'' is proposed.
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Submitted 5 February, 2003;
originally announced February 2003.
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A new dimension to Turing patterns
Authors:
Teemu Leppanen,
Mikko Karttunen,
Kimmo Kaski,
Rafael A. Barrio,
Limei Zhang
Abstract:
It is well known that simple reaction-diffusion systems can display very rich pattern formation behavior. Here we have studied two examples of such systems in three dimensions. First we investigate the morphology and stability of a generic Turing system in three dimensions and then the well-known Gray-Scott model. In the latter case, we added a small number of morphogen sources in the system in…
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It is well known that simple reaction-diffusion systems can display very rich pattern formation behavior. Here we have studied two examples of such systems in three dimensions. First we investigate the morphology and stability of a generic Turing system in three dimensions and then the well-known Gray-Scott model. In the latter case, we added a small number of morphogen sources in the system in order to study its robustness and the formation of connections between the sources. Our results raise the question of whether Turing patterning can produce an inductive signaling mechanism for neuronal growth.
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Submitted 14 November, 2002; v1 submitted 14 November, 2002;
originally announced November 2002.
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Self-consistent cluster CPA methods and the nested CPA theory
Authors:
C. I. Ventura,
R. A. Barrio,
.
Abstract:
The coherent potential approximation, CPA, is a useful tool to treat systems with disorder. Cluster theories have been proposed to go beyond the translation invariant single-site CPA approximation and include some short range correlations. In this framework one can also treat simultaneously diagonal disorder (in the site-diagonal elements of the Hamiltonian) and non-diagonal disorder (in the bon…
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The coherent potential approximation, CPA, is a useful tool to treat systems with disorder. Cluster theories have been proposed to go beyond the translation invariant single-site CPA approximation and include some short range correlations. In this framework one can also treat simultaneously diagonal disorder (in the site-diagonal elements of the Hamiltonian) and non-diagonal disorder (in the bond energies). It proves difficult to obtain reasonable results, free of non-analyticities, for lattices of dimension higher than one (D>1). We show electronic structure results obtained for a Hubbard model, treated in mean field approximation, on a square lattice and a simple cubic lattice, with the simultaneous inclusion of diagonal and non-diagonal disorder. We compare the results obtained using three different methods to treat the problem: a self-consistent 2-site cluster CPA method, the Blackman-Esterling-Berk single-site like extension of the CPA and a nested CPA approach.
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Submitted 16 December, 1999;
originally announced December 1999.
