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Signature of non-trivial band topology in Shubnikov--de Haas oscillations
Authors:
Denis R. Candido,
Sigurdur I. Erlingsson,
João Vitor I. Costa,
J. Carlos Egues
Abstract:
We investigate the Shubnikov-de Haas (SdH) magneto-oscillations in the resistivity of two-dimensional topological insulators (TIs). Within the Bernevig-Hughes-Zhang (BHZ) model for TIs in the presence of a quantizing magnetic field, we obtain analytical expressions for the SdH oscillations by combining a semiclassical approach for the resistivity and a trace formula for the density of states. We s…
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We investigate the Shubnikov-de Haas (SdH) magneto-oscillations in the resistivity of two-dimensional topological insulators (TIs). Within the Bernevig-Hughes-Zhang (BHZ) model for TIs in the presence of a quantizing magnetic field, we obtain analytical expressions for the SdH oscillations by combining a semiclassical approach for the resistivity and a trace formula for the density of states. We show that when the non-trivial topology is produced by inverted bands with ''Mexican-hat'' shape, SdH oscillations show an anomalous beating pattern that is {\it solely} due to the non-trivial topology of the system. These beatings are robust against, and distinct from beatings originating from spin-orbit interactions. This provides a direct way to experimentally probe the non-trivial topology of 2D TIs entirely from a bulk measurement. Furthermore, the Fourier transform of the SdH oscillations as a function of the Fermi energy and quantum capacitance models allows for extracting both the topological gap and gap at zero momentum.
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Submitted 13 June, 2024;
originally announced June 2024.
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Dual topological insulator with mirror-symmetry-protected helical edge states
Authors:
Warlley H. Campos,
Poliana H. Penteado,
Julian Zanon,
Paulo E. Faria Junior,
Denis R. Candido,
J. Carlos Egues
Abstract:
Dual topological insulators (DTIs) are simultaneously protected by time-reversal and crystal symmetries, representing advantageous alternatives to conventional topological insulators. By combining ab initio calculations and the $\mathbf{k}\cdot\mathbf{p}$ approach, here we investigate the electronic band structure of a Na$_2$CdSn tri-atomic layer and derive a low-energy $4\times 4$ effective model…
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Dual topological insulators (DTIs) are simultaneously protected by time-reversal and crystal symmetries, representing advantageous alternatives to conventional topological insulators. By combining ab initio calculations and the $\mathbf{k}\cdot\mathbf{p}$ approach, here we investigate the electronic band structure of a Na$_2$CdSn tri-atomic layer and derive a low-energy $4\times 4$ effective model consistent with all the symmetries of this material class. We obtain the effective Hamiltonian using the Löwdin perturbation theory, the folding down technique, and the theory of invariants, and determine its parameters by fitting our analytical dispersion relations to those of ab initio calculations. We then calculate the bulk topological invariants of the system and show that the Na$_2$CdSn tri-atomic layer is a giant-gap (hundreds of meV) quasi-2D DTI characterized by both spin and mirror Chern numbers $-2$. In agreement with the bulk-boundary correspondence theorem, we find that a finite-width strip of Na$_2$CdSn possesses two pairs of counter-propagating helical edge states per interface. We obtain analytical expressions for the edge states energy dispersions and wave functions, which are shown to agree with our numerical calculations. Our work opens a new avenue for further studies of Na$_2$CdSn as a potential DTI candidate with room-temperature applications in areas of technological interest, such as nanoelectronics and spintronics.
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Submitted 24 May, 2024;
originally announced May 2024.
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Magnon-mediated qubit coupling determined via dissipation measurements
Authors:
Masaya Fukami,
Jonathan C. Marcks,
Denis R. Candido,
Leah R. Weiss,
Benjamin Soloway,
Sean E. Sullivan,
Nazar Delegan,
F. Joseph Heremans,
Michael E. Flatté,
David D. Awschalom
Abstract:
Controlled interaction between localized and delocalized solid-state spin systems offers a compelling platform for on-chip quantum information processing with quantum spintronics. Hybrid quantum systems (HQSs) of localized nitrogen-vacancy (NV) centers in diamond and delocalized magnon modes in ferrimagnets-systems with naturally commensurate energies-have recently attracted significant attention,…
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Controlled interaction between localized and delocalized solid-state spin systems offers a compelling platform for on-chip quantum information processing with quantum spintronics. Hybrid quantum systems (HQSs) of localized nitrogen-vacancy (NV) centers in diamond and delocalized magnon modes in ferrimagnets-systems with naturally commensurate energies-have recently attracted significant attention, especially for interconnecting isolated spin qubits at length-scales far beyond those set by the dipolar coupling. However, despite extensive theoretical efforts, there is a lack of experimental characterization of the magnon-mediated interaction between NV centers, which is necessary to develop such hybrid quantum architectures. Here, we experimentally determine the magnon-mediated NV-NV coupling from the magnon-induced self-energy of NV centers. Our results are quantitatively consistent with a model in which the NV center is coupled to magnons by dipolar interactions. This work provides a versatile tool to characterize HQSs in the absence of strong coupling, informing future efforts to engineer entangled solid-state systems.
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Submitted 22 August, 2023;
originally announced August 2023.
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Magnon Diffusion Length and Longitudinal Spin Seebeck Effect in Vanadium Tetracyanoethylene (V[TCNE]$_x$, $x \sim 2$)
Authors:
Seth W. Kurfman,
Denis R. Candido,
Brandi Wooten,
Yuanhua Zheng,
Michael J. Newburger,
Shuyu Cheng,
Roland K. Kawakami,
Joseph P. Heremans,
Michael E. Flatté,
Ezekiel Johnston-Halperin
Abstract:
Spintronic, spin caloritronic, and magnonic phenomena arise from complex interactions between charge, spin, and structural degrees of freedom that are challenging to model and even more difficult to predict. This situation is compounded by the relative scarcity of magnetically-ordered materials with relevant functionality, leaving the field strongly constrained to work with a handful of well-studi…
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Spintronic, spin caloritronic, and magnonic phenomena arise from complex interactions between charge, spin, and structural degrees of freedom that are challenging to model and even more difficult to predict. This situation is compounded by the relative scarcity of magnetically-ordered materials with relevant functionality, leaving the field strongly constrained to work with a handful of well-studied systems that do not encompass the full phase space of phenomenology predicted by fundamental theory. Here we present an important advance in this coupled theory-experiment challenge, wherein we extend existing theories of the spin Seebeck effect (SSE) to explicitly include the temperature-dependence of magnon non-conserving processes. This expanded theory quantitatively describes the low-temperature behavior of SSE signals previously measured in the mainstay material yttrium iron garnet (YIG) and predicts a new regime for magnonic and spintronic materials that have low saturation magnetization, $M_S$, and ultra-low damping. Finally, we validate this prediction by directly observing the spin Seebeck resistance (SSR) in the molecule-based ferrimagnetic semiconductor vanadium tetracyanoethylene (V[TCNE]$_x$, $x \sim 2$). These results validate the expanded theory, yielding SSR signals comparable in magnitude to YIG and extracted magnon diffusion length ($λ_m>1$ $μ$ m) and magnon lifetime for V[TCNE]$_x$ ($τ_{th}\approx 1-10$ $μ$ s) exceeding YIG ($τ_{th}\sim 10$ ns). Surprisingly, these properties persist to room temperature despite relatively low spin wave stiffness (exchange). This identification of a new regime for highly efficient SSE-active materials opens the door to a new class of magnetic materials for spintronic and magnonic applications.
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Submitted 18 August, 2023;
originally announced August 2023.
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Unconventional quantum oscillations and evidence of non-trivial electronic states in quasi-two-dimensional electron system at complex oxide interfaces
Authors:
Km Rubi,
Denis R. Candido,
Manish Dumen,
Shengwei Zeng,
Andrew Ammerlaan,
Femke Bangma,
Mun K. Chan,
Michel Goiran,
Ariando Ariando,
Suvankar Chakraverty,
Walter Escoffier,
Uli Zeitler,
Neil Harrison
Abstract:
The simultaneous occurrence of electric-field controlled superconductivity and spin-orbit interaction makes two-dimensional electron systems (2DES) constructed from perovskite transition metal oxides promising candidates for the next generation of spintronics and quantum computing. It is, however, essential to understand the electronic bands thoroughly and verify the predicted electronic states ex…
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The simultaneous occurrence of electric-field controlled superconductivity and spin-orbit interaction makes two-dimensional electron systems (2DES) constructed from perovskite transition metal oxides promising candidates for the next generation of spintronics and quantum computing. It is, however, essential to understand the electronic bands thoroughly and verify the predicted electronic states experimentally in these 2DES to advance technological applications. Here, we present novel insights into the electronic states of the 2DES at oxide interfaces through comprehensive investigations of Shubnikov-de Haas oscillations in two different systems: EuO/KTaO$_3$ (EuO/KTO) and LaAlO$_3$/SrTiO$_3$ (LAO/STO). To accurately resolve these oscillations, we conducted transport measurements in high magnetic fields up to 60 T and low temperatures down to 100 mK. For 2D confined electrons at both interfaces, we observed a progressive increase of oscillations frequency and cyclotron mass with the magnetic field. We interpret these intriguing findings by considering the existence of non-trivial electronic bands, for which the $E-k$ dispersion incorporates both linear and parabolic dispersion relations. In addition to providing experimental evidence for topological-like electronic states in KTO-2DES and STO-2DES, the unconventional oscillations presented in this study establish a new paradigm for quantum oscillations in 2DES based on perovskite transition metal oxides, where the oscillations frequency exhibits quadratic dependence on the magnetic field.
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Submitted 1 May, 2024; v1 submitted 10 July, 2023;
originally announced July 2023.
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Efficient method to calculate energy spectra for analysing magneto-oscillations
Authors:
Hamed Gramizadeh,
Denis R. Candido,
Andrei Manolescu,
J. Carlos Egues,
Sigurdur I. Erlingsson
Abstract:
Magneto-oscillations in two-dimensional systems with spin-orbit interaction are typically characterized by fast Shubnikov-de~Haas (SdH) oscillations and slower spin-orbit-related beatings. The characterization of the full SdH oscillatory behavior in systems with both spin-orbit interaction and Zeeman coupling requires a time consuming diagonalization of large matrices for many magnetic field value…
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Magneto-oscillations in two-dimensional systems with spin-orbit interaction are typically characterized by fast Shubnikov-de~Haas (SdH) oscillations and slower spin-orbit-related beatings. The characterization of the full SdH oscillatory behavior in systems with both spin-orbit interaction and Zeeman coupling requires a time consuming diagonalization of large matrices for many magnetic field values. By using the Poisson summation formula we can explicitly separate the density of states into, fast and slow oscillations, which determine the corresponding fast and slow parts of the magneto-oscillations. We introduce an efficient scheme of partial diagonalization of our Hamiltonian, where only states close to the Fermi energy are needed to obtain the SdH oscillations, thus reducing the required computational time. This allows an efficient method for fitting numerically the SdH data, using the inherent separation of the fast and slow oscillations. We compare systems with only Rashba spin-orbit interaction (SOI) and both Rashba and Dresselhaus SOI with, and without, an in-plane magnetic field. The energy spectra are characterized in terms of symmetries, which have direct and visible consequences in the magneto-oscillations. To highlight the benefits of our methodology, we use it to extract the spin-orbit parameters by fitting realistic transport data.
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Submitted 4 June, 2023;
originally announced June 2023.
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Engineering Spin Coherence in Core-Shell Diamond Nanocrystals
Authors:
Uri Zvi,
Denis R. Candido,
Adam Weiss,
Aidan R. Jones,
Lingjie Chen,
Iryna Golovina,
Xiaofei Yu,
Stella Wang,
Dmitri V. Talapin,
Michael E. Flatté,
Aaron P. Esser-Kahn,
Peter C. Maurer
Abstract:
Diamond nanocrystals can harbor spin qubit sensors capable of probing the physical properties of biological systems with nanoscale spatial resolution. These diamond nanosensors can readily be delivered into intact cells and even living organisms. However, applications beyond current proof-of-principle experiments require a substantial increase in sensitivity, which is generally limited by surface-…
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Diamond nanocrystals can harbor spin qubit sensors capable of probing the physical properties of biological systems with nanoscale spatial resolution. These diamond nanosensors can readily be delivered into intact cells and even living organisms. However, applications beyond current proof-of-principle experiments require a substantial increase in sensitivity, which is generally limited by surface-noise-induced spin dephasing and relaxation. In this work, we significantly reduce magnetic surface noise by engineering core-shell structures, which in combination with dynamical decoupling result in qubit coherence times (T2) ranging from 52us to 87us - a drastic improvement over the 1.1us to 35us seen in bare particles. This improvement in spin coherence, combined with an overall increase in particle fluorescence, corresponds to a two-order-of-magnitude reduction in integration time. Probing qubit dynamics at a single particle level, furthermore, reveals that the noise characteristics fundamentally change from a bath with spins that rearrange their spatial configuration during the course of an experiment to a more dilute static bath. The observed results shed light on the underlying mechanisms governing spin dephasing in diamond nanocrystals and offer an effective noise mitigation strategy based on engineered core-shell structures.
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Submitted 4 May, 2023;
originally announced May 2023.
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Quantum oscillations in 2D electron gases with spin-orbit and Zeeman interactions
Authors:
Denis R. Candido,
Sigurdur I. Erlingsson,
Hamed Gramizadeh,
João Vitor I. Costa,
Pirmin J. Weigele,
Dominik M. Zumbühl,
J. Carlos Egues
Abstract:
Shubnikov-de Haas (SdH) oscillations have served as a paradigmatic experimental probe and tool for extracting key semiconductor parameters such as carrier density, effective mass, Zeeman splitting with g-factor $g^*$, quantum scattering times and spin-orbit (SO) coupling parameters. Here, we derive for the first time an analytical formulation for the SdH oscillations in 2D electron gases (2DEGs) w…
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Shubnikov-de Haas (SdH) oscillations have served as a paradigmatic experimental probe and tool for extracting key semiconductor parameters such as carrier density, effective mass, Zeeman splitting with g-factor $g^*$, quantum scattering times and spin-orbit (SO) coupling parameters. Here, we derive for the first time an analytical formulation for the SdH oscillations in 2D electron gases (2DEGs) with simultaneous Rashba, Dresselhaus, and Zeeman interactions. Our analytical and numerical calculations allow us to extract both Rashba and Dresselhaus SO coupling parameters, carrier density, quantum lifetimes, and also to understand the role of higher harmonics in the SdH oscillations. More importantly, we derive a simple condition for the vanishing of SO induced SdH beatings for all harmonics in 2DEGs: $α/β= [(1-\tilde Δ)/(1+\tilde Δ)]^{1/2}$, where $\tilde Δ$ is a material parameter given by the ratio of the Zeeman and Landau level splitting. We also predict beatings in the higher harmonics of the SdH oscillations and elucidate the inequivalence of the SdH response of Rashba-dominated ($α>β$) vs Dresselhaus-dominated ($α<β$) 2DEGs in semiconductors with substantial $g^*$. We find excellent agreement with recent available experimental data of Dettwiler ${\it et\thinspace al.}$ Phys. Rev. X $\textbf{7}$, 031010 (2017), and Beukman ${\it et\thinspace al.}$, Phys. Rev. B $\textbf{96}$, 241401 (2017).
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Submitted 27 April, 2023;
originally announced April 2023.
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Interplay between charge and spin noise in the near-surface theory of decoherence and relaxation of $C_{3v}$ symmetry qutrit spin-1 centers
Authors:
Denis R. Candido,
Michael E. Flatté
Abstract:
Decoherence and relaxation of solid-state defect qutrits near a crystal surface, where they are commonly used as quantum sensors, originates from charge and magnetic field noise. A complete theory requires a formalism for decoherence and relaxation that includes all Hamiltonian terms allowed by the defect's point-group symmetry. This formalism, presented here for the $C_{3v}$ symmetry of a spin-1…
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Decoherence and relaxation of solid-state defect qutrits near a crystal surface, where they are commonly used as quantum sensors, originates from charge and magnetic field noise. A complete theory requires a formalism for decoherence and relaxation that includes all Hamiltonian terms allowed by the defect's point-group symmetry. This formalism, presented here for the $C_{3v}$ symmetry of a spin-1 defect in a diamond, silicon cardide, or similar host, relies on a Lindblad dynamical equation and clarifies the relative contributions of charge and spin noise to relaxation and decoherence, along with their dependence on the defect spin's depth and resonant frequencies. The calculations agree with the experimental measurements of Sangtawesin $\textit{et al.}$, Phys. Rev. X $\textbf{9}$, 031052 (2019) and point to an unexpected importance of charge noise.
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Submitted 23 March, 2023;
originally announced March 2023.
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Quantum simulation of spin-1/2 XYZ model using solid-state spin centers
Authors:
Troy Losey,
Denis R. Candido,
Jin Zhang,
Y. Meurice,
M. E. Flatté,
S. -W. Tsai
Abstract:
In this work we propose a novel solid-state platform for creating quantum simulators based on implanted spin centers in semiconductors. We show that under the presence of an external magnetic field, an array of $S=1$ spin centers interacting through magnetic dipole-dipole interaction can be mapped into an effective spin-half system equivalent to the XYZ model in an external magnetic field. Interes…
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In this work we propose a novel solid-state platform for creating quantum simulators based on implanted spin centers in semiconductors. We show that under the presence of an external magnetic field, an array of $S=1$ spin centers interacting through magnetic dipole-dipole interaction can be mapped into an effective spin-half system equivalent to the XYZ model in an external magnetic field. Interestingly, this system presents a wide range of quantum phases and critical behaviors that can be controlled via magnetic field and orientational arrangement of the spin centers. We demonstrate our interacting spin chain can be tuned to both isotropic Heisenberg model and transverse-field Ising universality class. Notably, our model contains a line where the system is in a critical floating phase that terminates at Berezinskii-Kosterlitz-Thouless and Pokrovsky-Talapov transition points. We propose this system as the first solid-state quantum simulator for the floating phase based on spin centers.
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Submitted 16 January, 2024; v1 submitted 15 September, 2022;
originally announced September 2022.
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Theory of spin center sensing of diffusion
Authors:
Denis R. Candido,
Michael E. Flatté
Abstract:
Surface electric (charge) noise influences spin defects due to fluctuation of the surface charge density and also the electrostatic potential at the crystal surface. Surprisingly, the two-point correlation function of both the charged particles' positions and the surface electrostatic potential strongly influences the power of the polynomial decay of the electric noise spectral density; this power…
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Surface electric (charge) noise influences spin defects due to fluctuation of the surface charge density and also the electrostatic potential at the crystal surface. Surprisingly, the two-point correlation function of both the charged particles' positions and the surface electrostatic potential strongly influences the power of the polynomial decay of the electric noise spectral density; this power is not determined solely by the character of the charge fluctuators. Time-dependent crossover behavior near the correlation time of the fluctuators, of the spin defect's relaxation and decoherence, provide a quantitative fingerprint of the diffusive behavior of charged particles at the surface.
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Submitted 8 June, 2022; v1 submitted 31 December, 2021;
originally announced December 2021.
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Engineering topological phases in triple HgTe/CdTe quantum wells
Authors:
G. J. Ferreira,
D. R. Candido,
F. G. G. Hernandez,
G. M. Gusev,
E. B. Olshanetsky,
N. N. Mikhailov,
S. A. Dvoretsky
Abstract:
Quantum wells formed by layers of HgTe between Hg$_{1-x}$Cd$_x$Te barriers lead to two-dimensional (2D) topological insulators, as predicted by the BHZ model. Here, we theoretically and experimentally investigate the characteristics of triple HgTe quantum wells. We describe such heterostructure with a three dimensional $8\times 8$ Kane model, and use its eigenstates to derive an effective 2D Hamil…
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Quantum wells formed by layers of HgTe between Hg$_{1-x}$Cd$_x$Te barriers lead to two-dimensional (2D) topological insulators, as predicted by the BHZ model. Here, we theoretically and experimentally investigate the characteristics of triple HgTe quantum wells. We describe such heterostructure with a three dimensional $8\times 8$ Kane model, and use its eigenstates to derive an effective 2D Hamiltonian for the system. From these we obtain a phase diagram as a function of the well and barrier widths and we identify the different topological phases composed by zero, one, two, and three sets of edge states hybridized along the quantum wells. The phase transitions are characterized by a change of the spin Chern numbers and their corresponding band inversions. Complementary, transport measurements are experimentally investigated on a sample close to the transition line between the phases with one and two sets of edges states. Accordingly, for this sample we predict a gapless spectrum with low energy bulk conduction bands given by one parabolic and one Dirac band, and with edge states immersed in the bulk valance bands. Consequently, we show that under these conditions, local and non-local transport measurements are inconclusive to characterize a sole edge state conductivity due to bulk conductivity. On the other hand, Shubnikov-de Haas (SdH) oscillations show an excellent agreement with our theory. Particularly, we show that the measured SdH oscillation frequencies agrees with our model and show clear signatures of the coexistence of a parabolic and Dirac bands.
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Submitted 2 December, 2021;
originally announced December 2021.
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Opportunities for long-range magnon-mediated entanglement of spin qubits via on- and off-resonant coupling
Authors:
Masaya Fukami,
Denis R. Candido,
David D. Awschalom,
Michael E. Flatté
Abstract:
The ability to manipulate entanglement between multiple spatially-separated qubits is essential for quantum information processing. Although nitrogen-vacancy (NV) centers in diamond provide a promising qubit platform, developing scalable two-qubit gates remains a well-known challenge. To this end, magnon-mediated entanglement proposals have attracted attention due to their long-range spin-coherent…
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The ability to manipulate entanglement between multiple spatially-separated qubits is essential for quantum information processing. Although nitrogen-vacancy (NV) centers in diamond provide a promising qubit platform, developing scalable two-qubit gates remains a well-known challenge. To this end, magnon-mediated entanglement proposals have attracted attention due to their long-range spin-coherent propagation. Optimal device geometries and gate protocols of such schemes, however, have yet to be determined. Here we predict strong long-distance ($>μ$m) NV-NV coupling via magnon modes with cooperativities exceeding unity in ferromagnetic bar and waveguide structures. Moreover, we explore and compare on-resonant transduction and off-resonant virtual-magnon exchange protocols, and discuss their suitability for generating or manipulating entangled states at low temperatures ($T\lesssim 150$ mK) under realistic experimental conditions. This work will guide future experiments that aim to entangle spin qubits in solids with magnon excitations.
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Submitted 3 September, 2021; v1 submitted 22 January, 2021;
originally announced January 2021.
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Suppression of the optical linewidth and spin decoherence of a quantum spin center in a $p$$-$$n$ diode
Authors:
Denis R. Candido,
Michael E. Flatté
Abstract:
We present a quantitative theory of the suppression of the optical linewidth due to charge fluctuation noise in a ${p}$$-$${n}$ diode, recently observed in Anderson et al., Science 366, 1225 (2019). We connect the local electric field with the voltage across the diode, allowing for the identification of the defect depth from the experimental threshold voltage. Furthermore, we show that an accurate…
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We present a quantitative theory of the suppression of the optical linewidth due to charge fluctuation noise in a ${p}$$-$${n}$ diode, recently observed in Anderson et al., Science 366, 1225 (2019). We connect the local electric field with the voltage across the diode, allowing for the identification of the defect depth from the experimental threshold voltage. Furthermore, we show that an accurate description of the decoherence of such spin centers requires a complete spin$-$1 formalism that yields a bi-exponential decoherence process, and predict how reduced charge fluctuation noise suppresses the spin center's decoherence rate.
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Submitted 30 August, 2020;
originally announced August 2020.
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Exploring a quantum-information-relevant magnonic material: Ultralow damping at low temperature in the organic ferrimagnet V[TCNE]x
Authors:
Huma Yusuf,
Michael Chilcote,
Denis R. Candido,
Seth W. Kurfman,
Donley S. Cormode,
Yu Lu,
Michael E. Flatté,
Ezekiel Johnston-Halperin
Abstract:
Quantum information science and engineering requires novel low-loss magnetic materials for magnon-based quantum-coherent operations. The search for low-loss magnetic materials, traditionally driven by applications in microwave electronics near room-temperature, has gained additional constraints from the need to operate at cryogenic temperatures for many applications in quantum information science…
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Quantum information science and engineering requires novel low-loss magnetic materials for magnon-based quantum-coherent operations. The search for low-loss magnetic materials, traditionally driven by applications in microwave electronics near room-temperature, has gained additional constraints from the need to operate at cryogenic temperatures for many applications in quantum information science and technology. Whereas yttrium iron garnet (YIG) has been the material of choice for decades, the emergence of molecule-based materials with robust magnetism and ultra-low damping has opened new avenues for exploration. Specifically, thin-films of vanadium tetracyanoethylene (V[TCNE]x) can be patterned into the multiple, connected structures needed for hybrid quantum elements and have shown room-temperature Gilbert damping (α = 4 \times 10^-5) that rivals the intrinsic (bulk) damping otherwise seen only in highly-polished YIG spheres (far more challenging to integrate into arrays). Here, we present a comprehensive and systematic study of the low-temperature magnetization dynamics for V[TCNE]x thin films, with implications for their application in quantum systems. These studies reveal a temperature-driven, strain-dependent magnetic anisotropy that compensates the thin-film shape anisotropy, and the recovery of a magnetic resonance linewidth at 5 K that is comparable to room-temperature values (roughly 2 G at 9.4 GHz). We can account for these variations of the V[TCNE]x linewidth within the context of scattering from very dilute paramagnetic impurities, and anticipate additional linewidth narrowing as the temperature is further reduced.
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Submitted 9 November, 2021; v1 submitted 29 August, 2020;
originally announced August 2020.
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Predicted strong coupling of solid-state spins via a single magnon mode
Authors:
Denis R. Candido,
Gregory D. Fuchs,
Ezekiel Johnston-Halperin,
Michael E. Flatté
Abstract:
We propose an approach to realize a hybrid quantum system composed of a diamond nitrogen-vacancy (NV) center spin coupled to a magnon mode of the low-damping, low-moment organic ferrimagnet vanadium tetracyanoethylene. We derive an analytical expression for the spin-magnon cooperativity as a function of NV position under a micron-scale perpendicularly magnetized disk, and show that, surprisingly,…
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We propose an approach to realize a hybrid quantum system composed of a diamond nitrogen-vacancy (NV) center spin coupled to a magnon mode of the low-damping, low-moment organic ferrimagnet vanadium tetracyanoethylene. We derive an analytical expression for the spin-magnon cooperativity as a function of NV position under a micron-scale perpendicularly magnetized disk, and show that, surprisingly, the cooperativity will be higher using this magnetic material than in more conventional materials with larger magnetic moments, due to in part to the reduced demagnetization field. For reasonable experimental parameters, we predict that the spin-magnon-mode coupling strength is $g\sim 10$ kHz. For isotopically pure $^{12}$C diamond we predict strong coupling of an NV spin to the unoccupied magnon mode, with cooperativity $\mathcal C=6$ for a wide range of NV spin locations within the diamond, well within the spatial precision of NV center implantation. Thus our proposal describes a practical pathway for single-spin-state-to-single-magnon-occupancy transduction and for entangling NV centers over micron length scales.
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Submitted 1 September, 2020; v1 submitted 9 March, 2020;
originally announced March 2020.
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Spin-orbit coupling in wurtzite quantum wells
Authors:
J. Y. Fu,
P. H. Penteado,
D. R. Candido,
G. J. Ferreira,
D. P. Pires,
E. Bernardes,
J. C. Egues
Abstract:
Effective spin-orbit (SO) Hamiltonians for conduction electrons in wurtzite heterostructures are lacking in the literature, in contrast to zincblende structures. Here we address this issue by deriving such an effective Hamiltonian valid for quantum wells, wires, and dots with arbitrary confining potentials and external magnetic fields. We start from an 8$\times$8 Kane model accounting for the $s$-…
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Effective spin-orbit (SO) Hamiltonians for conduction electrons in wurtzite heterostructures are lacking in the literature, in contrast to zincblende structures. Here we address this issue by deriving such an effective Hamiltonian valid for quantum wells, wires, and dots with arbitrary confining potentials and external magnetic fields. We start from an 8$\times$8 Kane model accounting for the $s$--$p_z$ orbital mixing important to wurtzite structures, but absent in zincblende, and apply both quasi-degenerate perturbation theory (Löwdin partitioning) and the folding down approach to derive an effective 2$\times$2 electron Hamiltonian. We obtain the usual $k$-linear Rashba term arising from the structural inversion asymmetry of the wells and, differently from zincblende structures, a bulk Rashba-type term induced by the inversion asymmetry of the wurtzite lattice. We also find linear- and cubic-in-momentum Dresselhaus contributions. Both the bulk Rashba-type term and the Dresselhaus terms originate exclusively from the admixture of $s$- and $p_z$-like states in wurtzites structures. Interestingly, in these systems the linear Rashba and the Dresselhaus terms have the same symmetry and can in principle cancel each other out completely, thus making the spin a conserved quantity. We determine the intrasubband (intersubband) Rashba $α_ν$ ($η$) and linear Dresselhaus $β_ν$ ($Γ$) SO strengths of GaN/AlGaN single and double wells with one and two occupied subbands ($ν=1,2$). We believe our general effective Hamiltonian for electrons in wurtzite heterostructures put forward here, should stimulate additional theoretical works on wurtzite quantum wells, wires, and dots with variously defined geometries and external magnetic fields.
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Submitted 9 November, 2019;
originally announced November 2019.
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Low-Damping Ferromagnetic Resonance in Electron-Beam Patterned, High-$Q$ Vanadium Tetracyanoethylene Magnon Cavities
Authors:
Andrew Franson,
Na Zhu,
Seth Kurfman,
Michael Chilcote,
Denis R. Candido,
Kristen S. Buchanan,
Michael E. Flatté,
Hong X. Tang,
Ezekiel Johnston-Halperin
Abstract:
Integrating patterned, low-loss magnetic materials into microwave devices and circuits presents many challenges due to the specific conditions that are required to grow ferrite materials, driving the need for flip-chip and other indirect fabrication techniques. The low-loss ($α= 3.98 \pm 0.22 \times 10^{-5}$), room-temperature ferrimagnetic coordination compound vanadium tetracyanoethylene (…
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Integrating patterned, low-loss magnetic materials into microwave devices and circuits presents many challenges due to the specific conditions that are required to grow ferrite materials, driving the need for flip-chip and other indirect fabrication techniques. The low-loss ($α= 3.98 \pm 0.22 \times 10^{-5}$), room-temperature ferrimagnetic coordination compound vanadium tetracyanoethylene ($\mathrm{V[TCNE]}_x$) is a promising new material for these applications that is potentially compatible with semiconductor processing. Here we present the deposition, patterning, and characterization of $\mathrm{V[TCNE]}_x$ thin films with lateral dimensions ranging from 1 micron to several millimeters. We employ electron-beam lithography and liftoff using an aluminum encapsulated poly(methyl methacrylate), poly(methyl methacrylate-methacrylic acid) copolymer bilayer (PMMA/P(MMA-MAA)) on sapphire and silicon. This process can be trivially extended to other common semiconductor substrates. Films patterned via this method maintain low-loss characteristics down to 25 microns with only a factor of 2 increase down to 5 microns. A rich structure of thickness and radially confined spin-wave modes reveals the quality of the patterned films. Further fitting, simulation, and analytic analysis provides an exchange stiffness, $A_{ex} = 2.2 \pm 0.5 \times 10^{-10}$ erg/cm, as well as insights into the mode character and surface spin pinning. Below a micron, the deposition is non-conformal, which leads to interesting and potentially useful changes in morphology. This work establishes the versatility of $\mathrm{V[TCNE]}_x$ for applications requiring highly coherent magnetic excitations ranging from microwave communication to quantum information.
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Submitted 11 October, 2019;
originally announced October 2019.
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Corroborating the bulk-edge correspondence in weakly interacting 1D topological insulators
Authors:
Antonio Zegarra,
Denis R. Candido,
J. Carlos Egues,
Wei Chen
Abstract:
We present a Green's function formalism to investigate the topological properties of weakly interacting one-dimensional topological insulators, including the bulk-edge correspondence and the quantum criticality near topological phase transitions, and using interacting Su-Schrieffer-Heeger model as an example. From the many-body spectral function, we find that closing of the bulk gap remains a defi…
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We present a Green's function formalism to investigate the topological properties of weakly interacting one-dimensional topological insulators, including the bulk-edge correspondence and the quantum criticality near topological phase transitions, and using interacting Su-Schrieffer-Heeger model as an example. From the many-body spectral function, we find that closing of the bulk gap remains a defining feature even if the topological phase transition is driven by interactions. The existence of edge state in the presence of interactions can be captured by means of a T-matrix formalism combined with Dyson's equation, and the bulk-edge correspondence is shown to be satisfied even in the presence of interactions. The critical exponent of the edge state decay length is shown to be affiliated with the same universality class as the noninteracting limit.
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Submitted 7 May, 2019;
originally announced May 2019.
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Paradoxical extension of the edge states across the topological phase transition due to emergent approximate chiral symmetry in a quantum anomalous Hall system
Authors:
Denis R. Candido,
Maxim Kharitonov,
J. Carlos Egues,
Ewelina M. Hankiewicz
Abstract:
We present a paradoxical finding that, in the vicinity of a topological phase transition in a quantum anomalous Hall system (Chern insulator), topology nearly always (except when the system obeys charge-conjugation symmetry) results in a significant extension of the edge-state structure beyond the minimal one required to satisfy the Chern numbers. The effect arises from the universal gapless linea…
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We present a paradoxical finding that, in the vicinity of a topological phase transition in a quantum anomalous Hall system (Chern insulator), topology nearly always (except when the system obeys charge-conjugation symmetry) results in a significant extension of the edge-state structure beyond the minimal one required to satisfy the Chern numbers. The effect arises from the universal gapless linear-in-momentum Hamiltonian of the nodal semimetal describing the system right at the phase transition, whose form is enforced by the change of the Chern number. Its emergent approximate chiral symmetry results in an edge-state band in the vicinity of the node, in the region of momenta where such form is dominant. Upon opening the gap, this edge-state band is modified in the gap region, becoming "protected" (connected to the valence bulk band with one end and conduction band with the other) in the topologically nontrivial phase and "nonprotected" (connected to either the valence or conduction band with both ends) in the trivial phase. The edge-state band persists in the latter as long as the gap is small enough.
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Submitted 5 November, 2018; v1 submitted 13 July, 2018;
originally announced July 2018.
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Blurring the boundaries between topological and non-topological phenomena in dots
Authors:
Denis R. Candido,
M. E. Flatté,
J. Carlos Egues
Abstract:
We investigate the electronic and transport properties of topological and trivial InAs$_{1-x}$Bi$_x$ quantum dots (QDs). By considering the rapid band gap change within valence band anticrossing theory for InAs$_{1-x}$Bi$_x$, we predicted that Bi-alloyed quantum wells become $\sim 30$meV gapped 2D topological insulators for well widths $d>6.9$nm $(x = 0.15)$ and obtain the $\boldsymbol{k.p}$ param…
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We investigate the electronic and transport properties of topological and trivial InAs$_{1-x}$Bi$_x$ quantum dots (QDs). By considering the rapid band gap change within valence band anticrossing theory for InAs$_{1-x}$Bi$_x$, we predicted that Bi-alloyed quantum wells become $\sim 30$meV gapped 2D topological insulators for well widths $d>6.9$nm $(x = 0.15)$ and obtain the $\boldsymbol{k.p}$ parameters of the corresponding Bernevig-Hughes-Zhang (BHZ) model. We analytically solve this model for cylindrical confinement via modified Bessel functions. For non-topological dots we find "geometrically protected" discrete helical edge-like states, i.e., Kramers pairs with spin-angular-momentum locking, in stark contrast with ordinary InAs QDs. For a conduction window with four edge states, we find that the two-terminal conductance ${\cal G}$ vs. the QD radius $R$ and the gate $V_g$ controlling its levels shows a double peak at $2e^2/h$ for both topological and trivial QDs. In contrast, when bulk and edge-state Kramers pairs coexist and are degenerate, a single-peak resonance emerges. Our results blur the boundaries between topological and non-topological phenomena for conductance measurements in small systems such as QDs. Bi-based BHZ QDs should also prove important as hosts to edge spin qubits.
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Submitted 7 March, 2018;
originally announced March 2018.
