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Strong magneto-optical responses of an ensemble of defect-bound excitons in aged WS$_{2}$ and WSe$_{2}$ monolayers
Authors:
Frederico B. Sousa,
Alessandra Ames,
Mingzu Liu,
Pedro L. Gastelois,
Vinícius A. Oliveira,
Da Zhou,
Matheus J. S. Matos,
Helio Chacham,
Mauricio Terrones,
Marcio D. Teodoro,
Leandro M. Malard
Abstract:
Transition metal dichalcogenide (TMD) monolayers present a singular coupling in their spin and valley degrees of freedom. Moreover, by applying an external magnetic field it is possible to break the energy degeneracy between their K and $-$K valleys. Thus, this analogous valley Zeeman effect opens the possibility of controlling and distinguishing the spin and valley of charge carriers in TMDs by t…
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Transition metal dichalcogenide (TMD) monolayers present a singular coupling in their spin and valley degrees of freedom. Moreover, by applying an external magnetic field it is possible to break the energy degeneracy between their K and $-$K valleys. Thus, this analogous valley Zeeman effect opens the possibility of controlling and distinguishing the spin and valley of charge carriers in TMDs by their optical transition energies, making these materials promising for the next generation of spintronic and photonic devices. However, the free excitons of pristine TMD monolayer samples present a moderate valley Zeeman splitting, which is measured by their g-factor values that are approximately $-4$. Therefore, for application purposes it is mandatory alternative excitonic states with higher magnetic responses. Here we investigate the valley Zeeman effect in aged WS$_{2}$ and WSe$_{2}$ grown monolayers by magneto-photoluminescence measurements at cryogenic temperatures. These samples present a lower energy defect-bound exciton emission related to defects adsorbed during the aging process. While the free excitons of these samples exhibit g-factors between $-3$ and $-4$, their defect-bound excitons present giant effective g-factor values of $-(25.0 \pm 0.2)$ and $-(19.1 \pm 0.2)$ for WS$_{2}$ and WSe$_{2}$ aged monolayers, respectively. In addition, we observe a significant spin polarization of charge carriers in the defective mid gap states induced by the external magnetic fields. We explain this spin polarized population in terms of a spin-flip transition mechanism, which is also responsible for the magnetic dependent light emission of the defect-bound exciton states. Our work sheds light in the potential of aged TMDs as candidates for spintronic based devices.
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Submitted 5 April, 2024;
originally announced April 2024.
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Flow through deformed carbon nanotubes predicted by rigid and flexible water models
Authors:
Bruno H. S. Mendonça,
Elizane E. de Moraes,
Alexsandro Kirch,
Ronaldo J. C. Batista,
Alan B. de Oliveira,
Marcia C. Barbosa,
Hélio Chacham
Abstract:
In this study, using non-equilibrium molecular dynamics simulation, the flow of water in deformed carbon nanotubes is studied for two water models TIP4P/2005 and SPC/FH. The results demonstrated a non-uniform dependence of the flow on the tube deformation and the flexibility imposed on the water molecules, leading to an unexpected increase in the flow in some cases. The effects of tube diameter an…
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In this study, using non-equilibrium molecular dynamics simulation, the flow of water in deformed carbon nanotubes is studied for two water models TIP4P/2005 and SPC/FH. The results demonstrated a non-uniform dependence of the flow on the tube deformation and the flexibility imposed on the water molecules, leading to an unexpected increase in the flow in some cases. The effects of tube diameter and pressure gradient are investigated to explain the abnormal flow behavior with different degrees of structural deformation.
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Submitted 2 May, 2023;
originally announced May 2023.
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Water diffusion in carbon nanotubes for rigid and flexible models
Authors:
Bruno H. S. Mendonça,
Elizane E. de Moraes,
Ronaldo J. C. Batista,
Alan B. de Oliveira,
Marcia C. Barbosa,
Hélio Chacham
Abstract:
We compared the diffusion of water confined in armchair and zigzag carbon nanotubes for rigid and flexible water models. Using one rigid model, TIP4P/2005, and two flexible models, SPC/Fw and SPC/FH, we found that the number of the number of hydrogen bonds that water forms depends on the structure of the nanotube, directly affecting the diffusion of water. The simulation results reveal that due to…
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We compared the diffusion of water confined in armchair and zigzag carbon nanotubes for rigid and flexible water models. Using one rigid model, TIP4P/2005, and two flexible models, SPC/Fw and SPC/FH, we found that the number of the number of hydrogen bonds that water forms depends on the structure of the nanotube, directly affecting the diffusion of water. The simulation results reveal that due to the hydrophobic nature of carbon nanotubes and the degrees of freedom imposed by the water force fields, water molecules tend to avoid the surface of the carbon nanotube. This junction of variables plays a central role in the diffusion of water, mainly in narrow and/or deformed nanotubes, governing the mobility of confined water in a non-trivial way, where the greater the degree of freedom of the water force field, the smaller it will be mobility in confinement, as we limit the competition between area/volume, and it no longer plays the unique role in changing water diffusivity.
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Submitted 21 January, 2023;
originally announced January 2023.
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High throughput investigation of an emergent and naturally abundant 2D material: Clinochlore
Authors:
Raphaela de Oliveira,
Luis A. G. Guallichico,
Eduardo Policarpo,
Alisson R. Cadore,
Raul O. Freitas,
Francisco M. C. da Silva,
Verônica de C. Teixeira,
Roberto M. Paniago,
Helio Chacham,
Matheus J. S. Matos,
Angelo Malachias,
Klaus Krambrock,
Ingrid D. Barcelos
Abstract:
Phyllosilicate minerals, which form a class of naturally occurring layered materials (LMs), have been recently considered as a low-cost source of two-dimensional (2D) materials. Clinochlore [Mg5Al(AlSi3)O10(OH)8] is one of the most abundant phyllosilicate minerals in nature, exhibiting the capability to be mechanically exfoliated down to a few layers. An important characteristic clinochlore is the…
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Phyllosilicate minerals, which form a class of naturally occurring layered materials (LMs), have been recently considered as a low-cost source of two-dimensional (2D) materials. Clinochlore [Mg5Al(AlSi3)O10(OH)8] is one of the most abundant phyllosilicate minerals in nature, exhibiting the capability to be mechanically exfoliated down to a few layers. An important characteristic clinochlore is the natural occurrence of defects and impurities which can strongly affect their optoelectronic properties, possibly in technologically interesting ways. In the present work, we carry out a thorough investigation of the clinochlore structure on both bulk and 2D exfoliated forms, discussing its optical features and the influence of the insertion of impurities on its macroscopic properties. Several experimental techniques are employed, followed by theoretical first-principles calculations considering several types of naturally-ocurring transition metal impurities in the mineral lattice and their effect on electronic and optical properties. We demonstrate the existence of requirements concerning surface quality and insulating properties of clinochlore that are mandatory for its suitable application in nanoelectronic devices. The results presented in this work provide important informations for clinochlore potential applications and establish a basis for further works that intend to optimize its properties to relevant 2D technological applications through defect engineering.
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Submitted 20 June, 2022;
originally announced June 2022.
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Reversible doping of graphene field effect transistors by molecular hydrogen: the role of the metal/graphene interface
Authors:
C. L. Pereira,
A. R. Cadore,
N. P. Rezende,
A. Gadelha,
E. A. Soares,
H. Chacham,
L. C. Campos,
R. G. Lacerda
Abstract:
In this work, we present an investigation regarding how and why molecular hydrogen changes the electronic properties of graphene field effect transistors. We demonstrate that interaction with H2 leads to local doping of graphene near of the graphene-contact heterojunction. We also show that such interaction is strongly dependent on the characteristics of the metal-graphene interface. By changing t…
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In this work, we present an investigation regarding how and why molecular hydrogen changes the electronic properties of graphene field effect transistors. We demonstrate that interaction with H2 leads to local doping of graphene near of the graphene-contact heterojunction. We also show that such interaction is strongly dependent on the characteristics of the metal-graphene interface. By changing the type metal in the contact, we observe that Ohmic contacts can be strongly or weakly electrostatically coupled with graphene. For strongly coupled contacts, the signature of the charge transfer effect promoted by the contacts results on an asymmetric ambipolar conduction, and such asymmetry can be tunable under interaction with H2. On the other hand, for contacts weakly coupled with graphene, the hydrogen interaction has a more profound effect. In such situation, the devices show a second charge neutrality point in graphene transistor transfer curves (a double-peak response) upon H2 exposure. We propose that this double-peak phenomenon arises from the decoupling of the work function of graphene and that of the metallic electrodes induced by the H2 molecules. We also show that the gas-induced modifications at the metal-graphene interface can be exploited to create a controlled graphene p-n junction, with considerable electron transfer to graphene layer and significant variation in the graphene resistance. These effects can pave the way for a suitable metallic contact engineering providing great potential for the application of such devices as gas sensors.
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Submitted 4 March, 2020;
originally announced March 2020.
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Observation of plasmon-phonon coupling in natural 2D graphene-talc heterostructures
Authors:
Ingrid D. Barcelos,
Alisson R. Cadore,
Ananias B. Alencar,
Francisco C. B. Maia,
Edrian Mania,
Rafael F. Oliveira,
Carlos C. B. Buffon,
Ângelo Malachias,
Raul O. Freitas,
Roberto L. Moreira,
Hélio Chacham
Abstract:
Two-dimensional (2D) materials occupy noteworthy place in nanophotonics providing for subwavelength light confinement and optical phenomena dissimilar to those of their bulk counterparts. In the mid-infrared, graphene-based heterostructures and van der Waals crystals of hexagonal boron nitride (hBN) overwhelmingly concentrate the attention by exhibiting real-space nano-optics from plasmons, phonon…
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Two-dimensional (2D) materials occupy noteworthy place in nanophotonics providing for subwavelength light confinement and optical phenomena dissimilar to those of their bulk counterparts. In the mid-infrared, graphene-based heterostructures and van der Waals crystals of hexagonal boron nitride (hBN) overwhelmingly concentrate the attention by exhibiting real-space nano-optics from plasmons, phonon-polaritons and hybrid plasmon phonon-polaritons quasiparticles. Here we present the mid-infrared nanophotonics of talc, a natural atomically flat layered material, and graphene-talc (G-talc) heterostructures using broadband synchrotron infrared nano-spectroscopy. We achieve wavelength tuning of the talc resonances, assigned to in- and out-of-plane vibrations by changing the thickness of the crystals, which serves as its infrared fingerprints. Moreover, we encounter coupling of the graphene plasmons polaritons with surface optical phonons of talc. As in the case of the G-hBN heterostructures, this coupling configures hybrid surface plasmon phonon-polariton modes causing 30 % increase in intensity for the out-of-plane mode, blue-shift for the in-plane mode and we have succeeded in altering the amplitude of such hybridization by varying the gate voltage. Therefore, our results promote talc and G-talc heterostructures as appealing materials for nanophotonics, like hBN and G-hBN, with potential applications for controllably manipulating infrared electromagnetic radiation at the subdiffraction scale.
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Submitted 15 April, 2018;
originally announced April 2018.
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Enhancing the response of NH3 graphene-sensors by using devices with different graphene-substrate distances
Authors:
A. R. Cadore,
E. Mania,
A. B. Alencar,
N. P. Rezende,
S. de Oliveira,
K. Watanabe,
T. Taniguchi,
H. Chacham,
L. C. Campos,
R. G. Lacerda
Abstract:
Graphene (G) is a two-dimensional material with exceptional sensing properties. In general, graphene gas sensors are produced in field effect transistor configuration on several substrates. The role of the substrates on the sensor characteristics has not yet been entirely established. To provide further insight on the interaction between ammonia molecules (NH3) and graphene devices, we report expe…
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Graphene (G) is a two-dimensional material with exceptional sensing properties. In general, graphene gas sensors are produced in field effect transistor configuration on several substrates. The role of the substrates on the sensor characteristics has not yet been entirely established. To provide further insight on the interaction between ammonia molecules (NH3) and graphene devices, we report experimental and theoretical studies of NH3 graphene sensors with graphene supported on three substrates: SiO2, talc and hexagonal boron nitride (hBN). Our results indicate that the charge transfer from NH3 to graphene depends not only on extrinsic parameters like temperature and gas concentration, but also on the average distance between the graphene sheet and the substrate. We find that the average distance between graphene and hBN crystals is the smallest among the three substrates, and that graphene-ammonia gas sensors based on a G/hBN heterostructure exhibit the fastest recovery times for NH3 exposure and are slightly affected by wet or dry air environment. Moreover, the dependence of graphene-ammonia sensors on different substrates indicates that graphene sensors exhibit two different adsorption processes for NH3 molecules: one at the top of the graphene surface and another at its bottom side close to the substrate. Therefore, our findings show that substrate engineering is crucial to the development of graphene-based gas sensors and indicate additional routes for faster sensors.
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Submitted 27 March, 2018;
originally announced March 2018.
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Soliton instability and fold formation in laterally compressed few-layer graphene
Authors:
Amauri Libério de Lima,
Lucas A. M. Müssnich,
Taíse M. Manhabosco,
Hélio Chacham,
Ronaldo J. C. Batista,
Alan Barros de Oliveira
Abstract:
We investigate -- through simulations and analytical calculations -- the consequences of uniaxial lateral compression applied to the upper layer of few-layer graphene. The simulations of compressed graphene show that strains larger than 2.8 \% induce soliton-like deformations that further develop into large, mobile folds. Such folds were indeed experimentally observed in graphene and other solid l…
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We investigate -- through simulations and analytical calculations -- the consequences of uniaxial lateral compression applied to the upper layer of few-layer graphene. The simulations of compressed graphene show that strains larger than 2.8 \% induce soliton-like deformations that further develop into large, mobile folds. Such folds were indeed experimentally observed in graphene and other solid lubricants two-dimensional materials. Interestingly, in the soliton-fold regime the shear stress decreases with the strain s, initially as $s^{-2/3}$ and rapidly going to zero. Such instability is consistent with the recently observed negative dynamic compressibility of two-dimensional materials. We also predict that the curvatures of the soliton-folds are given by $r_c = δ\sqrt{β/2α},$ where $1\le δ\le2,$ and $β$ and $α$ are respectively related to the layer bending modulus and to the exfoliation energy of the material. This finding might allow experimental estimates of the $β/α$ ratio of two-dimensional materials from fold morphology.
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Submitted 15 September, 2014;
originally announced September 2014.
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Stability of extended defects on boron nitride and graphene monolayers: the role of chemical environment
Authors:
L. C. Gomes,
S. S. Alexandre,
H. Chacham,
R. W. Nunes
Abstract:
We perform ab initio calculations that indicate that the relative stability of antiphase boundaries (APB) with armchair and zigzag chiralities in monolayer boron nitride (BN) is determined by the chemical potentials of the boron and nitrogen species in the synthesis process. In an N-rich environment, a zigzag APB with N-rich core is the most stable structure, while under B-rich or intrinsic growth…
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We perform ab initio calculations that indicate that the relative stability of antiphase boundaries (APB) with armchair and zigzag chiralities in monolayer boron nitride (BN) is determined by the chemical potentials of the boron and nitrogen species in the synthesis process. In an N-rich environment, a zigzag APB with N-rich core is the most stable structure, while under B-rich or intrinsic growth conditions, an armchair APB with stoichiometric core is the most stable. This stability transition is shown to arise from a competition between homopolar-bond (B-B and N-N) and elastic energy costs in the core of the APBs. Moreover, in the presence of a carbon source we find that a carbon-doped zigzag APB becomes the most stable boundary near the N-rich limit. The electronic structure of the two types of APBs in BN is shown to be particularly distinct, with the zigzag APB depicting defect-like deep electronic bands in the band gap, while the armchair APB shows bulk-like shallow electronic bands.
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Submitted 21 December, 2012; v1 submitted 30 November, 2012;
originally announced November 2012.
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Non-hexagonal-ring defects and structures induced by strain in graphene and in functionalized graphene
Authors:
Joice da Silva-Araújo,
A. J. M. Nascimento,
Hélio Chacham,
R. W. Nunes
Abstract:
We perform {\textit ab initio} calculations for the strain-induced formation of non-hexagonal-ring defects in graphene, graphane (planar CH), and graphenol (planar COH). We find that the simplest of such topological defects, the Stone-Wales defect, acts as a seed for strain-induced dissociation and multiplication of topological defects. Through the application of inhomogeneous deformations to grap…
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We perform {\textit ab initio} calculations for the strain-induced formation of non-hexagonal-ring defects in graphene, graphane (planar CH), and graphenol (planar COH). We find that the simplest of such topological defects, the Stone-Wales defect, acts as a seed for strain-induced dissociation and multiplication of topological defects. Through the application of inhomogeneous deformations to graphene, graphane and graphenol with initially small concentrations of pentagonal and heptagonal rings, we obtain several novel stable structures that possess, at the same time, large concentrations of non-hexagonal rings (from fourfold to elevenfold) and small formation energies.
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Submitted 15 March, 2012;
originally announced March 2012.
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Surface dangling bond states and band-lineups in hydrogen-terminated Si, Ge, and Ge/Si nanowires
Authors:
R. Kagimura,
R. W. Nunes,
H. Chacham
Abstract:
We report an ab initio study of the electronic properties of surface dangling-bond (SDB) states in hydrogen-terminated Si and Ge nanowires with diameters between 1 and 2 nm, Ge/Si nanowire heterostructures, and Si and Ge (111) surfaces. We find that the charge transition levels e(+/-) of SDB states behave as a common energy reference among Si and Ge wires and Si/Ge heterostructures, at 4.3 +/- 0.1…
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We report an ab initio study of the electronic properties of surface dangling-bond (SDB) states in hydrogen-terminated Si and Ge nanowires with diameters between 1 and 2 nm, Ge/Si nanowire heterostructures, and Si and Ge (111) surfaces. We find that the charge transition levels e(+/-) of SDB states behave as a common energy reference among Si and Ge wires and Si/Ge heterostructures, at 4.3 +/- 0.1 eV below the vacuum level. Calculations of e(+/-) for isolated atoms indicate that this nearly constant value is a periodic-table atomic property.
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Submitted 29 September, 2010;
originally announced September 2010.
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Gap opening in topological-defect lattices in graphene
Authors:
Joice da Silva-Araújo,
H. Chacham,
R. W. Nunes
Abstract:
Ab initio calculations indicate that topological-defect networks in graphene display the full variety of single-particle electronic structures, including Dirac-fermion null-gap semiconductors, as well as metallic and semiconducting systems of very low formation energies with respect to a pristine graphene sheet. Corrugation induced by the topological defects further reduces the energy and tends to…
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Ab initio calculations indicate that topological-defect networks in graphene display the full variety of single-particle electronic structures, including Dirac-fermion null-gap semiconductors, as well as metallic and semiconducting systems of very low formation energies with respect to a pristine graphene sheet. Corrugation induced by the topological defects further reduces the energy and tends to reduce the density of states at the Fermi level, to widen the gaps, or even to lead to gap opening in some cases where the parent planar geometry is metallic.
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Submitted 9 September, 2010;
originally announced September 2010.
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Bistability, softening, and quenching of magnetic moments in Ni-filled carbon nanotubes
Authors:
Eduardo M. Diniz,
Ricardo W. Nunes,
Hélio Chacham,
Mário S. C. Mazzoni
Abstract:
The authors apply first-principles calculations to investigate the interplay between structural, electronic, and magnetic properties of nanostructures composed of narrow nanotubes filled with metallic nanowires. The focus is on the structural and magnetic responses of Ni-filled nanotubes upon radial compression. Interestingly, metastable flattened structures are identified, in which radially defor…
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The authors apply first-principles calculations to investigate the interplay between structural, electronic, and magnetic properties of nanostructures composed of narrow nanotubes filled with metallic nanowires. The focus is on the structural and magnetic responses of Ni-filled nanotubes upon radial compression. Interestingly, metastable flattened structures are identified, in which radially deformed nanotubes are stabilized by the interactions with the encapsulated wire. Moreover, our results indicate a quenching of the magnetic moment of the wire upon compression, as a result of the transfer of charge from the $s$ to the $d$ orbitals of the atoms in the wire.
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Submitted 3 September, 2010;
originally announced September 2010.
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Resistive and rectifying effects of pulling gold atoms at thiol-gold nano-contacts
Authors:
Ronaldo J. C. Batista,
Pablo Ordejón,
Hélio Chacham,
Emilio Artacho
Abstract:
We investigate, by means of first-principles calculations, structural and transport properties of junctions made of symmetric dithiolated molecules placed between Au electrodes. As the electrodes are pulled apart, we find that it becomes energetically favorable that Au atoms migrate to positions between the electrode surface and thiol terminations, with junction structures alternating between sy…
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We investigate, by means of first-principles calculations, structural and transport properties of junctions made of symmetric dithiolated molecules placed between Au electrodes. As the electrodes are pulled apart, we find that it becomes energetically favorable that Au atoms migrate to positions between the electrode surface and thiol terminations, with junction structures alternating between symmetric and asymmetric. As a result, the calculated $\emph{IV}$ curves alternate between rectifying and non-rectifying behaviors as the electrodes are pulled apart, which is consistent with recent experimental results.
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Submitted 21 September, 2006;
originally announced September 2006.
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Electronic structure of nanocones of boron nitrite
Authors:
Sergio Azevedo,
Mario S. C. Mazzoni,
H. Chacham,
R. W. Nunes
Abstract:
We apply first-principles calculations to study the electronic structure of boron nitride nanocones with disclinations of different angles $θ=nπ/3$. Nanocones with odd values of $n$ present antiphase boundaries that cause a reduction of the work function of the nanocones, relative to the bulk BN value, by as much as 2 eV. In contrast, nanocones with even values of $n$ do not have such defects an…
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We apply first-principles calculations to study the electronic structure of boron nitride nanocones with disclinations of different angles $θ=nπ/3$. Nanocones with odd values of $n$ present antiphase boundaries that cause a reduction of the work function of the nanocones, relative to the bulk BN value, by as much as 2 eV. In contrast, nanocones with even values of $n$ do not have such defects and present work functions that are very similar to the BN bulk value. These results should have strong consequences for the field emission properties of boron nitride nanocones and nanotubes.
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Submitted 21 September, 2004;
originally announced September 2004.
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Stability of antiphase line defects in nanometer-sized boron-nitride cones
Authors:
Sergio Azevedo,
Mario S. C. Mazzoni,
Ricardo W. Nunes,
H. Chacham
Abstract:
We investigate the stability of boron nitride conical sheets of nanometer size, using first-principles calculations. Our results indicate that cones with an antiphase boundary (a line defect that contains either B-B or N-N bonds) can be more stable than those without one. We also find that doping the antiphase boundaries with carbon can enhance their stability, leading also to the appearance of…
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We investigate the stability of boron nitride conical sheets of nanometer size, using first-principles calculations. Our results indicate that cones with an antiphase boundary (a line defect that contains either B-B or N-N bonds) can be more stable than those without one. We also find that doping the antiphase boundaries with carbon can enhance their stability, leading also to the appearance of localized states in the bandgap. Among the structures we considered, the one with the smallest formation energy is a cone with a carbon-modified antiphase boundary that presents a spin splitting of about 0.5 eV at the Fermi level.
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Submitted 20 September, 2004;
originally announced September 2004.
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Structures of Si and Ge nanowires in the sub-nanometer range
Authors:
Ricardo Kagimura,
Ricardo W. Nunes,
Helio Chacham
Abstract:
We report an ab-initio investigation of several possible Si and Ge pristine nanowires with diameters between 0.5 and 1.2 nm. We considered nanowires based on the diamond structure, high-density bulk structures, and fullerene-like structures. We find that the diamond structure nanowires are unstable for diameters smaller than 1 nm, and undergo considerable structural transformations towards amorp…
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We report an ab-initio investigation of several possible Si and Ge pristine nanowires with diameters between 0.5 and 1.2 nm. We considered nanowires based on the diamond structure, high-density bulk structures, and fullerene-like structures. We find that the diamond structure nanowires are unstable for diameters smaller than 1 nm, and undergo considerable structural transformations towards amorphous-like wires. Such instability is consistent with a continuum model that predicts, for both Si and Ge, a stability crossover between diamond and high-density-structure nanowires for diameters smaller than 1 nm. For diameters between 0.8 nm and 1 nm, filled-fullerene wires are the most stable ones. For even smaller diameters (d~0.5 nm), we find that a simple hexagonal structure is particularly stable for both Si and Ge.
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Submitted 25 August, 2004;
originally announced August 2004.
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Electromechanical Effects in Carbon Nanotubes
Authors:
M. Verissimo-Alves,
Belita Koiller,
H. Chacham,
R. B. Capaz
Abstract:
We perform ab initio calculations of charged graphene and single-wall carbon nanotubes (CNTs). A wealth of electromechanical behaviors is obtained: (1) Both nanotubes and graphene expand upon electron injection. (2) Upon hole injection, metallic nanotubes and graphene display a non-monotonic behavior: Upon increasing hole densities, the lattice constant initially contracts, reaches a minimum, an…
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We perform ab initio calculations of charged graphene and single-wall carbon nanotubes (CNTs). A wealth of electromechanical behaviors is obtained: (1) Both nanotubes and graphene expand upon electron injection. (2) Upon hole injection, metallic nanotubes and graphene display a non-monotonic behavior: Upon increasing hole densities, the lattice constant initially contracts, reaches a minimum, and then starts to expand. The hole densities at minimum lattice constants are 0.3 |e|/atom for graphene and between 0.1 and 0.3 |e|/atom for the metallic nanotubes studied. (3)Semiconducting CNTs with small diameters (d <~ 20 A) always expand upon hole injection; (4) Semiconducting CNTs with large diameters (d >~ 20 A) display a behavior intermediate between those of metallic and large-gap CNTs. (5) The strain versus extra charge displays a linear plus power-law behavior, with characteristic exponents for graphene, metallic, and semiconducting CNTs. All these features are physically understood within a simple tight-binding total-energy model.
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Submitted 18 November, 2002;
originally announced November 2002.
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Polarons in Carbon Nanotubes
Authors:
Marcos Verissimo-Alves,
R. B. Capaz,
Belita Koiller,
Emilio Artacho,
H. Chacham
Abstract:
We use ab initio total-energy calculations to predict the existence of polarons in semiconducting carbon nanotubes (CNTs). We find that the CNTs' band edge energies vary linearly and the elastic energy increases quadratically with both radial and with axial distortions, leading to the spontaneous formation of polarons. Using a continuum model parametrized by the ab initio calculations, we estima…
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We use ab initio total-energy calculations to predict the existence of polarons in semiconducting carbon nanotubes (CNTs). We find that the CNTs' band edge energies vary linearly and the elastic energy increases quadratically with both radial and with axial distortions, leading to the spontaneous formation of polarons. Using a continuum model parametrized by the ab initio calculations, we estimate electron and hole polaron lengths, energies and effective masses and analyze their complex dependence on CNT geometry. Implications of polaron effects on recently observed electro- and opto-mechanical behavior of CNTs are discussed.
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Submitted 20 February, 2001; v1 submitted 28 July, 2000;
originally announced July 2000.
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Energetics of the oxidation and opening of a carbon nanotube
Authors:
Mario S. C. Mazzoni,
Helio Chacham,
Pablo Ordejon,
Daniel Sanchez-Portal,
Jose M. Soler,
Emilio Artacho
Abstract:
We apply first principles calculations to study the opening of single-wall carbon nanotubes (SWNT's) by oxidation. We show that an oxygen rim can stabilize the edge of the open tube. The sublimation of CO$_2$ molecules from the rim with the subsequent closing of the tube changes from endothermic to exothermic as the tube radius increases, within the range of experimental feasible radii. We also…
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We apply first principles calculations to study the opening of single-wall carbon nanotubes (SWNT's) by oxidation. We show that an oxygen rim can stabilize the edge of the open tube. The sublimation of CO$_2$ molecules from the rim with the subsequent closing of the tube changes from endothermic to exothermic as the tube radius increases, within the range of experimental feasible radii. We also obtain the energies for opening the tube at the cap and at the wall, the latter being significantly less favorable.
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Submitted 28 May, 1999;
originally announced May 1999.