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Crossed Luttinger Liquid Hidden in a Quasi-two-dimensional Material η-Mo4O11
Authors:
X. Du,
L. Kang,
Y. Y. Lv,
J. S. Zhou,
X. Gu,
R. Z. Xu,
Q. Q. Zhang,
Z. X. Yin,
W. X. Zhao,
Y. D. Li,
S. M. He,
D. Pei,
Y. B. Chen,
M. X. Wang,
Z. K. Liu,
Y. L. Chen,
L. X. Yang
Abstract:
Although the concept of Luttinger liquid (LL) that describes a one-dimensional (1D) interacting fermion system collapses in higher dimensions, it has been proposed to be closely related to many mysteries including the normal state of cuprate superconductor, unconventional metal, and quantum criticality. Therefore, the generalization of LL model to higher dimensions has attracted substantial resear…
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Although the concept of Luttinger liquid (LL) that describes a one-dimensional (1D) interacting fermion system collapses in higher dimensions, it has been proposed to be closely related to many mysteries including the normal state of cuprate superconductor, unconventional metal, and quantum criticality. Therefore, the generalization of LL model to higher dimensions has attracted substantial research attention. Here we systematically investigate the electronic structure of a quasi-2D compound η-Mo4O11 using high-resolution angle-resolved photoemission spectroscopy and ab-initio calculation. Remarkably, we reveal a prototypical LL behavior originating from the crossing quasi-1D chain arrays hidden in the quasi-2D crystal structure. Our results suggest that η-Mo4O11 materializes the long sought-after crossed LL phase, where the orthogonal orbital components significantly reduce the coupling between intersecting quasi-1D chains and therefore maintain the essential properties of LL. Our finding not only presents a realization of 2D LL, but also provides a new angle to understand non-Fermi liquid behaviors in other 2D and 3D quantum materials.
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Submitted 15 September, 2022;
originally announced September 2022.
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Observation of non-trivial topological electronic structure of orthorhombic SnSe
Authors:
H. J. Zheng,
W. J. Shi,
C. W. Wang,
Y. Y. Lv,
W. Xia,
B. H. Li,
F. Wu,
S. M. He,
K. Huang,
S. T. Cui,
C. Chen,
H. F. Yang,
A. J. Liang,
M. X. Wang,
Z. Sun,
S. H. Yao,
Y. B. Chen,
Y. F. Guo,
Q. X. Mi,
L. X. Yang,
M. S. Bahramy,
Z. K. Liu,
Y. L. Chen
Abstract:
Topological electronic structures are key to the topological classification of quantum materials and play an important role in their physical properties and applications. Recently, SnSe has attracted great research interests due to its superior thermoelectric performance. However, it's topological nature has long been ignored. In this work, by combining synchrotron-based angle-resolved photoemissi…
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Topological electronic structures are key to the topological classification of quantum materials and play an important role in their physical properties and applications. Recently, SnSe has attracted great research interests due to its superior thermoelectric performance. However, it's topological nature has long been ignored. In this work, by combining synchrotron-based angle-resolved photoemission spectroscopy and ab-initio calculations, we systematically investigated the topological electronic structure of orthorhombic SnSe. By identifying the continuous gap in the valence bands due to the band inversion and the topological surface states on its (001) surface, we establish SnSe as a strong topological insulator. Furthermore, we studied the evolution of the topological electronic structure and propose the topological phase diagram in SnSe1-xTex. Our work reveals the topological non-trivial nature of SnSe and provides new understandings of its intriguing transport properties.
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Submitted 14 April, 2022;
originally announced April 2022.
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Turning ZrTe5 into semiconductor through atomic intercalation
Authors:
Qi-Yuan Li,
Yang-Yang Lv,
Jinghui Wang,
Song Bao,
Wei Shi,
Li Zhu,
Wei-Min Zhao,
Cheng-Long Xue,
Zhen-Yu Jia,
Libo Gao,
Y. B. Chen,
Jinsheng Wen,
Yan-Feng Chen,
Shao-Chun Li
Abstract:
In this work, we use the liquid ammonia method to successfully intercalate potassium atoms into ZrTe5 single crystal, and find a transition from semimetal to semiconductor at low temperature in the intercalated ZrTe5. The resistance anomalous peak is gradually suppressed and finally disappears with increasing potassium concentration. Whilst, the according sign reversal is always observed in the Ha…
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In this work, we use the liquid ammonia method to successfully intercalate potassium atoms into ZrTe5 single crystal, and find a transition from semimetal to semiconductor at low temperature in the intercalated ZrTe5. The resistance anomalous peak is gradually suppressed and finally disappears with increasing potassium concentration. Whilst, the according sign reversal is always observed in the Hall resistance measurement. We tentatively attribute the semimetal-semiconductor transition to the lattice expansion induced by atomic intercalation and thereby a larger energy band gap.
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Submitted 2 March, 2019;
originally announced March 2019.
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Van der Waals heteroepitaxial growth of monolayer Sb in puckered honeycomb structure
Authors:
Zhi-Qiang Shi,
Huiping Li,
Qian-Qian Yuan,
Ye-Heng Song,
Yang-Yang Lv,
Wei Shi,
Zhen-Yu Jia,
Libo Gao,
Y. B. Chen,
Wenguang Zhu,
Shao-Chun Li
Abstract:
Atomically thin two-dimensional (2D) crystals have gained tremendous attentions owing to their potential impacts to the future electronics technologies, as well as the exotic phenomena emerging in these materials. Monolayer of α phase Sb (α-antimonene) that shares the same puckered structure as black phosphorous, has been predicted to be stable with precious properties. However, the experimental r…
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Atomically thin two-dimensional (2D) crystals have gained tremendous attentions owing to their potential impacts to the future electronics technologies, as well as the exotic phenomena emerging in these materials. Monolayer of α phase Sb (α-antimonene) that shares the same puckered structure as black phosphorous, has been predicted to be stable with precious properties. However, the experimental realization still remains challenging. Here, we successfully grow high-quality monolayer α-antimonene, with the thickness finely controlled. The α-antimonene exhibits great stability upon exposure to air. Combining scanning tunneling microscope, density functional theory calculations and transport measurement, it is found that the electron band crossing the Fermi level exhibits a linear dispersion with a fairly small effective mass, and thus a good electrical conductivity. All of these properties make the α-antimonene promising in the future electronic applications.
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Submitted 2 March, 2019;
originally announced March 2019.
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Superconductivity in Potassium-intercalated Td-WTe2
Authors:
Li Zhu,
Qi-Yuan Li,
Yang-Yang Lv,
Shichao Li,
Xin-Yang Zhu,
Zhen-Yu Jia,
Y. B. Chen,
Jinsheng Wen,
Shao-Chun Li
Abstract:
To realize topological superconductor is one of the most attracting topics because of its great potential in quantum computation. In this study, we successfully intercalate potassium (K) into the van der Waals gap of type II Weyl semimetal WTe2, and discover the superconducting state in KxWTe2 through both electrical transport and scanning tunneling spectroscopy measurements. The superconductivity…
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To realize topological superconductor is one of the most attracting topics because of its great potential in quantum computation. In this study, we successfully intercalate potassium (K) into the van der Waals gap of type II Weyl semimetal WTe2, and discover the superconducting state in KxWTe2 through both electrical transport and scanning tunneling spectroscopy measurements. The superconductivity exhibits an evident anisotropic behavior. Moreover, we also uncover the coexistence of superconductivity and the positive magneto-resistance state. Structural analysis substantiates the negligible lattice expansion induced by the intercalation, therefore suggesting K-intercalated WTe2 still hosts the topological nontrivial state. These results indicate that the K-intercalated WTe2 may be a promising candidate to explore the topological superconductor.
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Submitted 2 March, 2019;
originally announced March 2019.
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Significant low lattice thermal conductivity and potential high thermoelectric figure of merit in Na$_2$MgSn
Authors:
Cong Wang,
Y. B. Chen,
Shu-Hua Yao,
Jian Zhou
Abstract:
Thermoelectric materials enables the harvest of waste heat and directly conversion into electricity. In search of high efficient thermoelectric materials, low thermal conductivity of a material is essential and critical. Here, we have theoretically investigated the lattice thermal conductivity and thermoelectric properties of layered intermetallic Na$_2$MgSn and Na$_2$MgPb based on the density fun…
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Thermoelectric materials enables the harvest of waste heat and directly conversion into electricity. In search of high efficient thermoelectric materials, low thermal conductivity of a material is essential and critical. Here, we have theoretically investigated the lattice thermal conductivity and thermoelectric properties of layered intermetallic Na$_2$MgSn and Na$_2$MgPb based on the density functional theory and linearized Boltzmann equation with the single-mode relaxation-time approximation. It is found that both materials exhibit very low and anisotropic intrinsic lattice thermal conductivity. Despite of the very low mass density and simple crystal structure of Na$_2$MgSn, its lattice thermal conductivities along $a$ and $c$ axes are only 1.75 and 0.80 W/m$\cdot$K respectively at room temperatures. When Sn is replaced by the heavier element Pb, its lattice thermal conductivities decrease remarkably to 0.51 and 0.31 W/m$\cdot$K respectively along $a$ and $c$ axes at room temperatures. We show that the low lattice thermal conductivities of both materials are mainly due to their very short phonon lifetimes, which are roughly between 0.4 to 4.5 ps. Combined with previous experimental measurements, the metallic Na$_2$MgPb can not be a good thermoelectric material. However, we predict that the semiconducting Na$_2$MgSn is a potential room-temperature thermoelectric material with a considerable $ZT$ of 0.34 at 300 K. Our calculations not only imply that the intermetallic Na$_2$MgSn is a potential thermoelectric material, but also can motivate more theoretical and experimental works on the thermoelectric researches in simple layered intermetallic compounds.
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Submitted 17 July, 2018;
originally announced July 2018.
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Experimental evidence of giant chiral magnetic effect in type-II Weyl semimetal WP$_{2+δ}$ crystals
Authors:
Yang-Yang Lv,
Xiao Li,
Bin Pang,
Y. B. Chen,
Shu-Hua Yao,
Jian Zhou,
Yan-Feng Chen
Abstract:
Chiral magnetic effect is a quantum phenomenon that is breaking of chiral symmetry of relativistic Weyl fermions by quantum fluctuation under paralleled electric field E and magnetic field B. Intuitively, Weyl fermions with different chirality, under stimulus of paralleled E and B, will have different chemical potential that gives rise to an extra current, whose role likes a chiral battery in soli…
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Chiral magnetic effect is a quantum phenomenon that is breaking of chiral symmetry of relativistic Weyl fermions by quantum fluctuation under paralleled electric field E and magnetic field B. Intuitively, Weyl fermions with different chirality, under stimulus of paralleled E and B, will have different chemical potential that gives rise to an extra current, whose role likes a chiral battery in solids. However, up to now, the experimental evidence for chiral magnetic effect is the negative longitudinal magnetoresistance rather than a chiral electric source. Here, totally different from previous reports, we observed the giant chiral magnetic effect evidenced by: 'negative' resistivity and corresponding voltage-current curves lying the second-fourth quadrant in type-II Weyl semimetal WP$_{2+δ}$ under following conditions: the misaligned angle between E and B is smaller than 20$^\circ$, temperature <30 K and externally applied E<50 mA. Phenomenologically, based on macroscopic Chern-Simon-Maxwell equation, the giant chiral magnetic effect observed in WP$_{2+δ}$ is attributed to two-order higher coherent time of chiral Weyl-fermion quantum state over Drude transport relaxation-time. This work demonstrates the giant chiral-magnetic/chiral-battery effect in Weyl semimetals.
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Submitted 25 May, 2018; v1 submitted 11 August, 2017;
originally announced August 2017.
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Dirac Line-nodes and Effect of Spin-orbit Coupling in Non-symmorphic Critical Semimetal MSiS (M=Hf, Zr)
Authors:
C. Chen,
X. Xu,
J. Jiang,
S. -C. Wu,
Y. P. Qi,
L. X. Yang,
M. X. Wang,
Y. Sun,
N. B. M. Schröter,
H. F. Yang,
L. M. Schoop,
Y. Y. Lv,
J. Zhou,
Y. B. Chen,
S. H. Yao,
M. H. Lu,
Y. F. Chen,
C. Felser,
B. H. Yan,
Z. K. Liu,
Y. L. Chen
Abstract:
Topological Dirac semimetals (TDSs) represent a new state of quantum matter recently discovered that offers a platform for realizing many exotic physical phenomena. A TDS is characterized by the linear touching of bulk (conduction and valance) bands at discrete points in the momentum space (i.e. 3D Dirac points), such as in Na3Bi and Cd3As2. More recently, new types of Dirac semimetals with robust…
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Topological Dirac semimetals (TDSs) represent a new state of quantum matter recently discovered that offers a platform for realizing many exotic physical phenomena. A TDS is characterized by the linear touching of bulk (conduction and valance) bands at discrete points in the momentum space (i.e. 3D Dirac points), such as in Na3Bi and Cd3As2. More recently, new types of Dirac semimetals with robust Dirac line-nodes (with non-trivial topology or near the critical point between topological phase transitions) have been proposed that extends the bulk linear touching from discrete points to 1D lines. In this work, using angle-resolved photoemission spectroscopy (ARPES), we explored the electronic structure of the non-symmorphic crystals MSiS (M=Hf, Zr). Remarkably, by mapping out the band structure in the full 3D Brillouin Zone (BZ), we observed two sets of Dirac line-nodes in parallel with the kz-axis and their dispersions. Interestingly, along directions other than the line-nodes in the 3D BZ, the bulk degeneracy is lifted by spin-orbit coupling (SOC) in both compounds with larger magnitude in HfSiS. Our work not only experimentally confirms a new Dirac line-node semimetal family protected by non-symmorphic symmetry, but also helps understanding and further exploring the exotic properties as well as practical applications of the MSiS family of compounds.
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Submitted 26 January, 2017; v1 submitted 24 January, 2017;
originally announced January 2017.
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Transition between strong and weak topological insulator in ZrTe$_5$ and HfTe$_5$
Authors:
Zongjian Fan,
Qi-Feng Liang,
Y. B. Chen,
Shu-Hua Yao,
Jian Zhou
Abstract:
ZrTe$_5$ and HfTe$_5$ have attracted increasingly attention recently since the theoretical prediction of being topological insulators (TIs). However, subsequent works show many contradictions about their topological nature.Three possible phases, i.e. strong TI, weak TI, and Dirac semi-metal, have been observed in different experiments until now. Essentially whether ZrTe$_5$ or HfTe$_5$ has a band…
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ZrTe$_5$ and HfTe$_5$ have attracted increasingly attention recently since the theoretical prediction of being topological insulators (TIs). However, subsequent works show many contradictions about their topological nature.Three possible phases, i.e. strong TI, weak TI, and Dirac semi-metal, have been observed in different experiments until now. Essentially whether ZrTe$_5$ or HfTe$_5$ has a band gap or not is still a question. Here, we present detailed first-principles calculations on the electronic and topological properties of ZrTe$_5$ and HfTe$_5$ on variant volumes and clearly demonstrate the topological phase transition from a strong TI, going through an intermediate Dirac semi-metal phase, then to a weak TI when the crystal expands.Our work might give a unified explain about the divergent experimental results and propose the crucial clue to further experiments to elucidate the topological nature of these materials.
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Submitted 4 March, 2017; v1 submitted 14 November, 2016;
originally announced November 2016.
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Experimental observation of anisotropic Adler-Bell-Jackiw anomaly in type-II Weyl semimetal WTe$_{1.98}$ crystals at the quasi-classical regime
Authors:
Yang-Yang Lv,
Xiao Li,
Bin-Bin Zhang,
W. Y. Deng,
Shu-Hua Yao,
Y. B. Chen,
Jian Zhou,
Shan-Tao Zhang,
Ming-Hui Lu,
Lei Zhang,
Ming-Liang Tian,
L. Sheng,
Yan-Feng Chen
Abstract:
The asymmetric electron dispersion in type-II Weyl semimetal theoretically hosts anisotropic transport properties. Here we observe the significant anisotropic Adler-Bell-Jackiw (ABJ) anomaly in the Fermi-level delicately adjusted WTe$_{1.98}$ crystals. Quantitatively, $C_w$ , a coefficient representing intensity of ABJ anomaly, along a- and b-axis of WTe$_{1.98}$ are 0.030 and 0.051 T$^{-2}$ at 2…
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The asymmetric electron dispersion in type-II Weyl semimetal theoretically hosts anisotropic transport properties. Here we observe the significant anisotropic Adler-Bell-Jackiw (ABJ) anomaly in the Fermi-level delicately adjusted WTe$_{1.98}$ crystals. Quantitatively, $C_w$ , a coefficient representing intensity of ABJ anomaly, along a- and b-axis of WTe$_{1.98}$ are 0.030 and 0.051 T$^{-2}$ at 2 K, respectively. We found that temperature-sensitive ABJ anomaly is attributed to topological phase transition from type-II Weyl semimetal to trivial semimetal, which is verified by first-principles calculation using experimentally determined lattice parameters at different temperatures. Theoretical electrical transport study reveals that observation of ansotropic ABJ both along a- and b-axis in WTe$_{1.98}$ is attributed to electrical transport in the quasi-classical regime. Our work may suggest that electron-doped WTe$_2$ is an ideal playground to explore the novel properties in type-II Weyl semimetals.
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Submitted 23 December, 2016; v1 submitted 18 August, 2016;
originally announced August 2016.
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Chiral Ordering Spin Associated Glass like State in SrRuO3SrIrO3 Superlattice
Authors:
Bin Pang,
Lunyong Zhang,
Y. B Chen,
Jian Zhou,
Shuhua Yao,
Shantao Zhang,
Yanfeng Chen
Abstract:
Heterostructure interface provides a powerful platform to observe rich emergent phenomena, such as interfacial superconductivity, nontrivial topological surface state. Here SrRuO3/SrIrO3 superlattices were epitaxially synthesized. The magnetic and electrical properties of these superlattices were characterized. Broad cusps in the zero field cooling magnetization curves and near stable residual mag…
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Heterostructure interface provides a powerful platform to observe rich emergent phenomena, such as interfacial superconductivity, nontrivial topological surface state. Here SrRuO3/SrIrO3 superlattices were epitaxially synthesized. The magnetic and electrical properties of these superlattices were characterized. Broad cusps in the zero field cooling magnetization curves and near stable residual magnetization below the broad cusps, as well as two steps magnetization hysteresis loops are observed. The magnetization relaxes following a modified Stretched function model indicating coexistence of spin glass and ferromagnetic ordering in the superlattices. Topological Hall effect was demonstrated at low temperature and weakened with the increase of SrIrO3 layer thickness. These results suggest that chiral ordering spin texture were generated at the interfaces due to the interfacial Dzyaloshinskii-Moriya (DM) interaction, which generates the spin glass behaviors. The present work demonstrates that SrIrO3 can effectively induce interface DM interactions in heterostructures, it would pave light on the new research directions of strong spin orbit interaction oxides, from the viewpoints of both basic science and prospective spintronics devices applications.
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Submitted 6 November, 2016; v1 submitted 14 June, 2016;
originally announced June 2016.
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Extremely large and significantly anisotropic magnetoresistance in ZrSiS single crystals
Authors:
Yang-Yang Lv,
Bin-Bin Zhang,
Xiao Li,
Shu-Hua Yao,
Y. B. Chen,
Jian Zhou,
Shan-Tao Zhang,
Ming-Hui Lu,
Yan-Feng Chen
Abstract:
Recently, the extremely large magnetoresistance observed in transition metal telluride, like WTe$_2$, attracted much attention because of the potential applications in magnetic sensor. Here we report the observation of extremely large magnetoresistance as 3.0$\times$10$^4$ % measured at 2 K and 9 T magnetic field aligned along [001]-ZrSiS. The significant magnetoresistance change (~1.4$\times$10…
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Recently, the extremely large magnetoresistance observed in transition metal telluride, like WTe$_2$, attracted much attention because of the potential applications in magnetic sensor. Here we report the observation of extremely large magnetoresistance as 3.0$\times$10$^4$ % measured at 2 K and 9 T magnetic field aligned along [001]-ZrSiS. The significant magnetoresistance change (~1.4$\times$10$^4$ %) can be obtained when the magnetic field is titled from [001] to [011]-ZrSiS. These abnormal magnetoresistance behaviors in ZrSiS can be understood by electron-hole compensation and the open orbital of Fermi surface. Because of these superior MR properties, ZrSiS may be used in the novel magnetic sensors.
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Submitted 6 April, 2016;
originally announced April 2016.
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Quantum topological Hall effect and noncoplanar antiferromagnetism in K$_{0.5}$RhO$_2$
Authors:
Jian Zhou,
Qi-Feng Liang,
Hongming Weng,
Y. B. Chen,
Shu-Hua Yao,
Yan-Feng Chen,
Jinming Dong,
Guang-Yu Guo
Abstract:
Quantum anomalous Hall (QAH) phase is a two-dimensional bulk ferromagnetic insulator with a nonzero Chern number in presence of spin-orbit coupling (SOC) but absence of applied magnetic fields. Associated metallic chiral edge states host dissipationless current transport in electronic devices. This intriguing QAH phase has recently been observed in magnetic impurity-doped topological insulators, {…
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Quantum anomalous Hall (QAH) phase is a two-dimensional bulk ferromagnetic insulator with a nonzero Chern number in presence of spin-orbit coupling (SOC) but absence of applied magnetic fields. Associated metallic chiral edge states host dissipationless current transport in electronic devices. This intriguing QAH phase has recently been observed in magnetic impurity-doped topological insulators, {\it albeit}, at extremely low temperatures. Based on first-principles density functional calculations, here we predict that layered rhodium oxide K$_{0.5}$RhO$_2$ in noncoplanar chiral antiferromagnetic state is an unconventional three-dimensional QAH insulator with a large band gap and a Neel temperature of a few tens Kelvins. Furthermore, this unconventional QAH phase is revealed to be the exotic quantum topological Hall effect caused by nonzero scalar spin chirality due to the topological spin structure in the system and without the need of net magnetization and SOC.
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Submitted 27 February, 2016;
originally announced February 2016.
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Robust topological edge states at the perfect surface step edge of topological insulator ZrTe$_5$
Authors:
Xiang-Bing Li,
Wen-Kai Huang,
Yang-Yang Lv,
Kai-Wen Zhang,
Chao-Long Yang,
Bin-Bin Zhang,
Y. B. Chen,
Shu-Hua Yao,
Jian Zhou,
Ming-Hui Lu,
Li Sheng,
Shao-Chun Li,
Jin-Feng Jia,
Qi-Kun Xue,
Yan-Feng Chen,
Dingyu Xing
Abstract:
We report an atomic-scale characterization of ZrTe$_5$ by using scanning tunneling microscopy. We observe a bulk bandgap of ~80 meV with topological edge states at the step edge, and thus demonstrate ZrTe$_5$ is a two dimensional topological insulator. It is also found that an applied magnetic field induces energetic splitting and spatial separation of the topological edge states, which can be att…
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We report an atomic-scale characterization of ZrTe$_5$ by using scanning tunneling microscopy. We observe a bulk bandgap of ~80 meV with topological edge states at the step edge, and thus demonstrate ZrTe$_5$ is a two dimensional topological insulator. It is also found that an applied magnetic field induces energetic splitting and spatial separation of the topological edge states, which can be attributed to a strong link between the topological edge states and bulk topology. The perfect surface steps and relatively large bandgap make ZrTe$_5$ be a potential candidate for future fundamental studies and device applications.
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Submitted 22 January, 2016;
originally announced January 2016.
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Review of Spin Orbit Coupled Semimetal SrIrO3 in thin film form
Authors:
Lunyong Zhang,
Bin Pang,
Y. B. Chen,
Yanfeng Chen
Abstract:
Spin orbit coupling provides a mechanism to lock the momentum of electron to its spin degree, recent years was revealed to be essential in arousing many novel physical behaviors. SrIrO3 is a typical metallic member of the strong spin orbit coupling iridate family. Its orthorhombic phase was confirmed as a particular spin orbit coupling assistant electron correlated semimetal with small electron an…
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Spin orbit coupling provides a mechanism to lock the momentum of electron to its spin degree, recent years was revealed to be essential in arousing many novel physical behaviors. SrIrO3 is a typical metallic member of the strong spin orbit coupling iridate family. Its orthorhombic phase was confirmed as a particular spin orbit coupling assistant electron correlated semimetal with small electron and hole pockets, and was supposed to host versatile topological phases, with prospect of opening a new topological matter field based on oxides. The existing experiments have demonstrated that orthorhombic SrIrO3 can be easily synthesized at two dimensional scale films under the substrate lattice constraint, and the films display Fermi-liquid behavior in high temperature and generally two dimensional weak localization resulted metal insulator transition. The properties of orthorhombic SrIrO3 film are sensitive to the rotation and tilting angle, as well as the interlayer coupling of the IrO6 octahedras, consequently can be tuned through substrate strain engineering and size scale. For example, the film was approached a state similar to Sr2IrO4 at the ultrathin limit to several unit cell, becoming a canted antiferromagnetic semiconductor/insulator. The existing knowledges suggest urgent demands of researches on the superlattices constructed with orthorhombic SrIrO3, for further understanding the evolution mechanism of the electron structure, and so the relevant magnetic state and topological phases in the orthorhombic SrIrO3 and its family.
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Submitted 20 July, 2017; v1 submitted 22 November, 2015;
originally announced November 2015.
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Tunable Semimetallic State in Compressive-strained SrIrO3 Films Revealed by Transport Behaviors
Authors:
Lunyong Zhang,
Qifeng Liang,
Ye Xiong,
Binbin Zhang,
Lei Gao,
Handong Li,
Y. B Chen,
Jian Zhou,
Shan-Tao Zhang,
Zheng-Bin Gu,
Shu-hua Yao,
Zhiming Wang,
Yuan Lin,
Yan-Feng Chen
Abstract:
Orthorhombic SrIrO3 is a typical spin-orbit-coupling correlated metal that shows diversified physical properties under the external stimuli. Here nonlinear Hall effect and weakly temperature-dependent resistance are observed in a SrIrO3 film epitaxially grown on SrTiO3 substrate. It infers that orthorhombic SrIrO3 is a semimetal oxide. However, linear Hall effect and insensitive-temperature-depend…
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Orthorhombic SrIrO3 is a typical spin-orbit-coupling correlated metal that shows diversified physical properties under the external stimuli. Here nonlinear Hall effect and weakly temperature-dependent resistance are observed in a SrIrO3 film epitaxially grown on SrTiO3 substrate. It infers that orthorhombic SrIrO3 is a semimetal oxide. However, linear Hall effect and insensitive-temperature-dependent resistance are observed in SrIrO3 films grown on (La,Sr)(Al,Ta)O3 (LSAT) substrates, suggesting a tunable semimetallic state due to band structure change in SrIrO3 films under different compressive strain. The mechanism of this evolution is explored in detail through strain-state analysis by reciprocal space mapping and electron diffraction, carrier density and mobility calculations, as well as electronic band structure evolution under compressive strain (predicted by tight-binding approximation). It might suggest that the strain-induced band shift leads to the semimetallic tuning in the SrIrO3 film grown on from SrTiO3 to LSAT substrates. Our findings illustrate the tunability of SrIrO3 properties and pave the way to induce novel physical states in SrIrO3 such as the proposed topological insulator state in heterostructures.
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Submitted 20 October, 2014; v1 submitted 15 June, 2014;
originally announced June 2014.
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Sensitively Temperature-Dependent Spin Orbit Coupling in SrIrO3 Thin Films
Authors:
Lunyong Zhang,
Y. B. Chen,
Jian Zhou,
Shan-Tao Zhang,
Zheng-bin Gu,
Shu-Hua Yao,
Yan-Feng Chen
Abstract:
Spin orbit coupling plays a non-perturbation effect in many recently developed novel fields including topological insulators and spin-orbit assistant Mott insulators. In this paper, strongly temperature-dependent spin orbit coupling, revealed by weak anti-localization, is observed at low temperature in 5d strongly correlated compound, SrIrO3. As the temperature rising, increase rate of Rashba coef…
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Spin orbit coupling plays a non-perturbation effect in many recently developed novel fields including topological insulators and spin-orbit assistant Mott insulators. In this paper, strongly temperature-dependent spin orbit coupling, revealed by weak anti-localization, is observed at low temperature in 5d strongly correlated compound, SrIrO3. As the temperature rising, increase rate of Rashba coefficient is nearly 30%-45%/K. The increase is nearly 100 times over that observed in semiconductor heterostructures. Microscopically, the large increase of Rashba coefficient is attributed to the significant evolution of effective Landé g factor on temperature, whose mechanism is discussed. Sensitively temperature-dependent spin orbit coupling in SrIrO3 might be applied in spintronic devices
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Submitted 29 September, 2013;
originally announced September 2013.
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Structural, optical, magnetic and electrical properties of Zn1-x Co (x) O thin films
Authors:
M. Tay,
Y. H. Wu,
G. C. Han,
Y. B. Chen,
X. P. Pan,
S. J. Wang,
P. Yang,
Y. P. Feng
Abstract:
Despite a considerable effort aiming at elucidating the nature of ferromagnetism in ZnO-based magnetic semiconductor, its origin still remains debatable. Although the observation of above room temperature ferromagnetism has been reported frequently in the literature by magnetometry measurement, so far there has been no report on correlated ferromagnetism in magnetic, optical and electrical measu…
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Despite a considerable effort aiming at elucidating the nature of ferromagnetism in ZnO-based magnetic semiconductor, its origin still remains debatable. Although the observation of above room temperature ferromagnetism has been reported frequently in the literature by magnetometry measurement, so far there has been no report on correlated ferromagnetism in magnetic, optical and electrical measurements. In this paper, we investigate systematically the structural, optical, magnetic and electrical properties of Zn1-x Co (x) O:Al thin films prepared by sputtering with x ranging from 0 to 0.33. We show that correlated ferromagnetism is present only in samples with x > 0.25. In contrast, samples with x < 0.2 exhibit weak ferromagnetism only in magnetometry measurement which is absent in optical and electrical measurements. We demonstrate, by systematic electrical transport studies that carrier localization indeed occurs below 20-50 K for samples with x < 0.2; however, this does not lead to the formation of ferromagnetic phase in these samples with an electron concentration in the range of 6 x 10(19) cm(-3) 1 x 10(20) cm(-3). Detailed structural and optical transmission spectroscopy analyses revealed that the anomalous Hall effect observed in samples with x > 0.25 is due to the formation of secondary phases and Co clusters.
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Submitted 30 April, 2009;
originally announced April 2009.
