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Second-order photonic topological insulator with corner states
Authors:
Bi Ye Xie,
Hong Fei Wang,
Hai-Xiao Wang,
Xue Yi Zhu,
Jian-Hua Jiang,
Ming Hui Lu,
Yan Feng Chen
Abstract:
Higher-order topological insulators (HOTIs) which go beyond the description of conventional bulk-boundary correspondence, broaden the understanding of topological insulating phases. Being mainly focused on electronic materials, HOTIs have not been found in photonic systems yet. In this article, we propose a type of two-dimensional second-order photonic crystals with zero-dimensional corner states…
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Higher-order topological insulators (HOTIs) which go beyond the description of conventional bulk-boundary correspondence, broaden the understanding of topological insulating phases. Being mainly focused on electronic materials, HOTIs have not been found in photonic systems yet. In this article, we propose a type of two-dimensional second-order photonic crystals with zero-dimensional corner states and one-dimensional boundary states for optical frequencies. All of these states are topologically non-trivial and can be understood based on the theory of topological polarization. Moreover, by tuning the easily-fabricated structure of the photonic crystals, we can realize different topological phases with unique topological boundary states straightforwardly. Our result can be generalized to higher dimensions and provides unprecedented venues for higher-order photonic topological insulators and semimetals.
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Submitted 1 December, 2018; v1 submitted 19 May, 2018;
originally announced May 2018.
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Dirac Line-nodes and Effect of Spin-orbit Coupling in Non-symmorphic Critical Semimetal MSiS (M=Hf, Zr)
Authors:
C. Chen,
X. Xu,
J. Jiang,
S. -C. Wu,
Y. P. Qi,
L. X. Yang,
M. X. Wang,
Y. Sun,
N. B. M. Schröter,
H. F. Yang,
L. M. Schoop,
Y. Y. Lv,
J. Zhou,
Y. B. Chen,
S. H. Yao,
M. H. Lu,
Y. F. Chen,
C. Felser,
B. H. Yan,
Z. K. Liu,
Y. L. Chen
Abstract:
Topological Dirac semimetals (TDSs) represent a new state of quantum matter recently discovered that offers a platform for realizing many exotic physical phenomena. A TDS is characterized by the linear touching of bulk (conduction and valance) bands at discrete points in the momentum space (i.e. 3D Dirac points), such as in Na3Bi and Cd3As2. More recently, new types of Dirac semimetals with robust…
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Topological Dirac semimetals (TDSs) represent a new state of quantum matter recently discovered that offers a platform for realizing many exotic physical phenomena. A TDS is characterized by the linear touching of bulk (conduction and valance) bands at discrete points in the momentum space (i.e. 3D Dirac points), such as in Na3Bi and Cd3As2. More recently, new types of Dirac semimetals with robust Dirac line-nodes (with non-trivial topology or near the critical point between topological phase transitions) have been proposed that extends the bulk linear touching from discrete points to 1D lines. In this work, using angle-resolved photoemission spectroscopy (ARPES), we explored the electronic structure of the non-symmorphic crystals MSiS (M=Hf, Zr). Remarkably, by mapping out the band structure in the full 3D Brillouin Zone (BZ), we observed two sets of Dirac line-nodes in parallel with the kz-axis and their dispersions. Interestingly, along directions other than the line-nodes in the 3D BZ, the bulk degeneracy is lifted by spin-orbit coupling (SOC) in both compounds with larger magnitude in HfSiS. Our work not only experimentally confirms a new Dirac line-node semimetal family protected by non-symmorphic symmetry, but also helps understanding and further exploring the exotic properties as well as practical applications of the MSiS family of compounds.
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Submitted 26 January, 2017; v1 submitted 24 January, 2017;
originally announced January 2017.
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Current and strain-induced spin polarization in InGaN/GaN superlattices
Authors:
H. J. Chang,
T. W. Chen,
J. W. Chen,
W. C. Hong,
W. C. Tsai,
Y. F. Chen,
G. Y. Guo
Abstract:
The lateral current-induced spin polarization in InGaN/GaN superlattices (SLs) without an applied magnetic field is reported. The fact that the sign of the nonequilibrium spin changes as the current reverses and is opposite for the two edges provides a clear signature for the spin Hall effect. In addition, it is discovered that the spin Hall effect can be strongly manipulated by the internal str…
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The lateral current-induced spin polarization in InGaN/GaN superlattices (SLs) without an applied magnetic field is reported. The fact that the sign of the nonequilibrium spin changes as the current reverses and is opposite for the two edges provides a clear signature for the spin Hall effect. In addition, it is discovered that the spin Hall effect can be strongly manipulated by the internal strains. A theoretical work has also been developed to understand the observed strain induced spin polarization. Our result paves an alternative way for the generation of spin polarized current.
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Submitted 25 February, 2007;
originally announced February 2007.
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Hooge's Constant of Carbon Nanotube Field Effect Transistors
Authors:
Masa Ishigami,
J. H. Chen,
E. D. Williams,
D. Tobias,
Y. F. Chen,
M. S. Fuhrer
Abstract:
The 1/f noise in individual semiconducting carbon nanotubes (s-CNT) in a field effect transistor configuration has been measured in ultra-high vacuum and following exposure to air. The amplitude of the normalized current spectral noise density is independent of source-drain current, indicating the noise is due to mobility rather than number fluctuations. Hooge's constant for s-CNT is found to be…
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The 1/f noise in individual semiconducting carbon nanotubes (s-CNT) in a field effect transistor configuration has been measured in ultra-high vacuum and following exposure to air. The amplitude of the normalized current spectral noise density is independent of source-drain current, indicating the noise is due to mobility rather than number fluctuations. Hooge's constant for s-CNT is found to be 9.3 plus minus 0.4x10^-3. The magnitude of the 1/f noise is substantially degreased by exposing the devices to air.
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Submitted 19 January, 2006;
originally announced January 2006.
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Four-point resistance of individual single-wall carbon nanotubes
Authors:
B. Gao,
Y. F. Chen,
M. S. Fuhrer,
D. C. Glattli,
A. Bachtold
Abstract:
We have studied the resistance of single-wall carbon nanotubes measured in a four-point configuration with noninvasive voltage electrodes. The voltage drop is detected using multiwalled carbon nanotubes while the current is injected through nanofabricated Au electrodes. The resistance at room temperature is shown to be linear with the length as expected for a classical resistor. This changes at…
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We have studied the resistance of single-wall carbon nanotubes measured in a four-point configuration with noninvasive voltage electrodes. The voltage drop is detected using multiwalled carbon nanotubes while the current is injected through nanofabricated Au electrodes. The resistance at room temperature is shown to be linear with the length as expected for a classical resistor. This changes at cryogenic temperature; the four-point resistance then depends on the resistance at the Au-tube interfaces and can even become negative due to quantum-interference effects.
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Submitted 2 May, 2005;
originally announced May 2005.
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On the low-field insulator-quantum Hall conductor transitions
Authors:
Tsai-Yu Huang,
J. R. Juang,
C. F. Huang,
Gil-Ho Kim,
Chao-Ping Huang,
C. -T. Liang,
Y. H. Chang,
Y. F. Chen,
Y. Lee,
D. A. Ritchie
Abstract:
We studied the insulator-quantum Hall conductor transition which separates the low-field insulator from the quantum Hall state of the filling factor $ν=4$ on a gated two-dimensional GaAs electron system containing self-assembled InAs quantum dots. To enter the $ν=4$ quantum Hall state directly from the low-field insulator, the two-dimensional system undergoes a crossover from the low-field local…
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We studied the insulator-quantum Hall conductor transition which separates the low-field insulator from the quantum Hall state of the filling factor $ν=4$ on a gated two-dimensional GaAs electron system containing self-assembled InAs quantum dots. To enter the $ν=4$ quantum Hall state directly from the low-field insulator, the two-dimensional system undergoes a crossover from the low-field localization to Landau quantization. The crossover, in fact, covers a wide range with respect to the magnetic field rather than only a small region near the critical point of the insulator-quantum Hall conductor transition.
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Submitted 12 March, 2005;
originally announced March 2005.
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Large LFMR observed in twinned La2/3Ca1/3MnO3 thin films epitaxially grown on YSZ-buffered SOI substrates
Authors:
J. Li,
P. Wang,
J. Y. Xiang,
X. H. Zhu,
W. Peng,
Y. F. Chen,
D. N. Zheng,
Z. W. Li
Abstract:
La2/3Ca1/3MnO3 thin films have been grown on yttria-stabilized zirconia (YSZ) buffered silicon-on-insulator (SOI) substrate by the pulsed laser deposition technique. While full cube-on-cube epitaxy was achieved for the YSZ layer, the top manganite layer was multi-domain-oriented, with a coexistence of cube-on-cube and cube-on-diagonal epitaxy. Due to a combined influence from the magnetocrystall…
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La2/3Ca1/3MnO3 thin films have been grown on yttria-stabilized zirconia (YSZ) buffered silicon-on-insulator (SOI) substrate by the pulsed laser deposition technique. While full cube-on-cube epitaxy was achieved for the YSZ layer, the top manganite layer was multi-domain-oriented, with a coexistence of cube-on-cube and cube-on-diagonal epitaxy. Due to a combined influence from the magnetocrystalline anisotropy and the magnetoelastic anisotropy, in zero field the local spin orientation varies across the twin boundaries. As a result, a quite large low-field magnetoresistance (LFMR) based on spin-dependent tunnelling was observed. The film shows a resistance change of ~20% in a magnetic field <1000 Oe at 50 K, which is promising for real applications.
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Submitted 2 July, 2004;
originally announced July 2004.
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Blue shift of yellow luminescence band in self-ion-implanted n-GaN nanowire
Authors:
S. Dhara,
A. Datta,
C. T. Wu,
Z. H. Lan,
K. H. Chen,
Y. L. Wang,
C. W. Hsu,
L. C. Chen,
H. M. Lin,
C. C. Chen,
Y. F. Chen
Abstract:
Optical photoluminescence studies are performed in self-ion (Ga+)-implanted nominally doped n-GaN nanowires. A 50-keV Ga+ focused ion beam (FIB) in the fluence range of 1x1014 -2x10^16 ions cm^-2 is used for the irradiation process. A blueshift is observed for the yellow luminescence (YL) band with increasing fluence. Donor-acceptor pair (DAP) model with emission involving shallow donor introduc…
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Optical photoluminescence studies are performed in self-ion (Ga+)-implanted nominally doped n-GaN nanowires. A 50-keV Ga+ focused ion beam (FIB) in the fluence range of 1x1014 -2x10^16 ions cm^-2 is used for the irradiation process. A blueshift is observed for the yellow luminescence (YL) band with increasing fluence. Donor-acceptor pair (DAP) model with emission involving shallow donor introduced by point-defect clusters related to nitrogen vacancies and probable deep acceptor created by gallium interstitial clusters is made responsible for the shift. High temperature annealing in nitrogen ambient restores the peak position of YL band by removing nitrogen vacancies.
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Submitted 2 February, 2004;
originally announced February 2004.
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Studies of the Temperature-Driven Flow Lines and Phase Transitions in a Two-Dimensional Si/SiGe Hole System
Authors:
C. T. Liang,
C. F. Huang,
Yu-Ming Cheng,
Tsai-Yu Huang,
Y. H. Chang,
Y. F. Chen
Abstract:
We have performed low-temperature transport experiments on a Si/SiGe hole system. The measured transverse and longitudinal condductivities $σ_{xx}$ and $σ_{xy}$ allow us to study the magnetic-field-induced transitions in the system. In particular, we present the first study of the temperature-driven flow lines in the "anomalous Hall insulator" regime near a Landau level filling factor $ν=1.5$. T…
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We have performed low-temperature transport experiments on a Si/SiGe hole system. The measured transverse and longitudinal condductivities $σ_{xx}$ and $σ_{xy}$ allow us to study the magnetic-field-induced transitions in the system. In particular, we present the first study of the temperature-driven flow lines in the "anomalous Hall insulator" regime near a Landau level filling factor $ν=1.5$. The "anomalous" temperature-driven flow lines could be due to the unusual energy level scheme in a Si/SiGe hole system. Moreover, for $3<ν<5$, there is a temperature-independent point in $ρ_{xx} (B)$, $ρ_{xy} (B)$, $σ_{xx}$, and $σ_{xy}$ which corresponds to a boundary of the quantum phase transition.
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Submitted 23 March, 2002; v1 submitted 18 January, 2002;
originally announced January 2002.
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Magnetic skyrmions and their lattices in triplet superconductors
Authors:
A. Knigavko,
B. Rosenstein,
Y. F. Chen
Abstract:
Complete topological classification of solutions in SO(3) symmetric Ginzburg-Landau free energy has been performed and a new class of solutions in weak external magnetic field carrying two units of magnetic flux has been identified. These solutions, magnetic skyrmions, do not have singular core like Abrikosov vortices and at low magnetic field become lighter for strongly type II superconductors.…
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Complete topological classification of solutions in SO(3) symmetric Ginzburg-Landau free energy has been performed and a new class of solutions in weak external magnetic field carrying two units of magnetic flux has been identified. These solutions, magnetic skyrmions, do not have singular core like Abrikosov vortices and at low magnetic field become lighter for strongly type II superconductors. As a consequence, the lower critical magnetic field Hc1 is reduced by a factor of log(kappa). Magnetic skyrmions repel each other as 1/r at distances much larger then magnetic penetration depth forming relatively robust triangular lattice. Magnetic induction near Hc1 increases gradually as (H-Hc1)^2. This agrees very well with experiments on heavy fermion superconductor UPt3. Newly discovered Ru based compounds Sr2RuO4 and Sr2YRu(1-x)Cu(x)O6 are other possible candidates to possess skyrmion lattices. Deviations from exact SO(3) symmetry are also studied.
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Submitted 23 January, 1999;
originally announced January 1999.
