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Morphology and Optical Properties of Thin Cd3As2 Films of a Dirac Semimetal Compound
Authors:
Natalia Kovaleva,
Ladislav Fekete,
Dagmar Chvostova,
Andrei Muratov
Abstract:
Using atomic-force microscopy (AFM) and wide-band (0.02-8.5 eV) spectroscopic ellipsometry techniques we investigated morphology and optical properties of Cd3As2 films grown by non-reactive rf magnetron sputtering on two types of oriented crystalline substrates (100)p-Si and (001) alpha-Al2O3. The AFM study revealed grainy morphology of the films due to island incorporation during the film growth.…
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Using atomic-force microscopy (AFM) and wide-band (0.02-8.5 eV) spectroscopic ellipsometry techniques we investigated morphology and optical properties of Cd3As2 films grown by non-reactive rf magnetron sputtering on two types of oriented crystalline substrates (100)p-Si and (001) alpha-Al2O3. The AFM study revealed grainy morphology of the films due to island incorporation during the film growth. The complex dielectric function spectra of the annealed Cd3As2/Al2O3 films manifest pronounced interband optical transitions at 1.2 and 3.0 eV, in excellent agreement with the theoretical calculations for the body centered tetragonal Cd3As2 crystal structure. We discovered that due to electronic excitations to the Cd(s) conical bands the low-energy absorption edge of the annealed Cd3As2 films reveals linear dependence. We found that for the annealed Cd3As2 films the Cd(s) conical node may be shifted in energy by about 0.08-0.18 eV above the heavy-flat As(p) valence band, determining the optical gap value. The as-grown Cd3As2 films exhibit the pronounced changes of the electronic band structure due to doping effect associated with Cd non-stoichiometry, where fine-tuning of Cd concentration may result in the gapless electronic band structure of Dirac semimetals.
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Submitted 13 January, 2023;
originally announced January 2023.
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Bi layer properties in the Bi-FeNi GMR-type structures probed by spectroscopic ellipsometry
Authors:
Natalia Kovaleva,
Dagmar Chvostova,
Ladislav Fekete,
Alexandr Dejneka
Abstract:
Bismuth (Bi) having a large atomic number is characterized by the strong spin-orbit coupling (SOC) and is a parent compound of many 3D topological insulators (TIs). The ultrathin Bi films are supposed to be 2D TIs possessing the nontrivial topology, which opens the possibility of developing new efficient technologies in the field of spintronics. Here we aimed at studying the dielectric function pr…
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Bismuth (Bi) having a large atomic number is characterized by the strong spin-orbit coupling (SOC) and is a parent compound of many 3D topological insulators (TIs). The ultrathin Bi films are supposed to be 2D TIs possessing the nontrivial topology, which opens the possibility of developing new efficient technologies in the field of spintronics. Here we aimed at studying the dielectric function properties of ultrathin Bi/FeNi periodic structures using spectroscopic ellipsometry. The [Bi(d)-FeNi(1.8 nm)]N GMR-type structures were grown by rf sputtering deposition on Sitall-glass (TiO2) substrates. The ellipsometric angles Psi(omega) and Delta(omega) were measured for the grown series (d=0.6,1.4,2.0,2.5 nm, N=16) of the multilayered film samples at room temperature for four angles of incidence of 60, 65, 70, and 75 degrees in a wide photon energy range of 0.5-6.5 eV. The measured ellipsometric angles, Psi(omega) and Delta(omega), were simulated in the framework of the corresponding multilayer model. The complex (pseudo)dielectric function spectra of the Bi layer were extracted. The GMR effects relevant for the studied Bi-FeNi MLF systems are estimated from the optical conductivity zero-limit (optical GMR effect). The obtained results demonstrate that the Bi layer possesses the surface metallic conductivity induced by the SOC effects, which is strongly enhanced on vanishing the semimetallic-like phase contribution on decreasing the layer thickness, indicating its nontrivial 2D topology properties.
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Submitted 13 January, 2023;
originally announced January 2023.
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Bismuth layer properties in the ultrathin Bi-FeNi multilayer films probed by spectroscopic ellipsometry
Authors:
N. N. Kovaleva,
D. Chvostova,
O. Pacherova,
A. V. Muratov,
L. Fekete,
I. A. Sherstnev,
K. I. Kugel,
F. A. Pudonin,
A. Dejneka
Abstract:
Using wide-band (0.5-6.5 eV) spectroscopic ellipsometry we study ultrathin [Bi(0.6-2.5 nm)-FeNi(0.8,1.2 nm)]N multilayer films grown by rf sputtering deposition, where the FeNi layer has a nanoisland structure and its morphology and magnetic properties change with decreasing the nominal layer thickness. From the multilayer model simulations of the ellipsometric angles, Psi(omega) and Delta(omega),…
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Using wide-band (0.5-6.5 eV) spectroscopic ellipsometry we study ultrathin [Bi(0.6-2.5 nm)-FeNi(0.8,1.2 nm)]N multilayer films grown by rf sputtering deposition, where the FeNi layer has a nanoisland structure and its morphology and magnetic properties change with decreasing the nominal layer thickness. From the multilayer model simulations of the ellipsometric angles, Psi(omega) and Delta(omega), the complex (pseudo)dielectric function spectra of the Bi layer were extracted. The obtained results demonstrate that the Bi layer can possess the surface metallic conductivity, which is strongly affected by the morphology and magnetic properties of the nanoisland FeNi layer in the GMR-type Bi-FeNi multilayer structures.
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Submitted 12 January, 2023;
originally announced January 2023.
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Localization Phenomena in Disordered Tantalum Films
Authors:
Natalia Kovaleva,
Dagmar Chvostova,
A. Dejneka
Abstract:
Using dc transport and wide-band spectroscopic ellipsometry techniques we study localization phenomena in highly disordered metallic β-Ta films grown by rf sputtering deposition. The dc transport study implies non-metallic behavior (dr/dT<0), with negative temperature coefficient of resistivity (TCR). We found that as the absolute TCR value increased, specifying an elevated degree of disorder, the…
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Using dc transport and wide-band spectroscopic ellipsometry techniques we study localization phenomena in highly disordered metallic β-Ta films grown by rf sputtering deposition. The dc transport study implies non-metallic behavior (dr/dT<0), with negative temperature coefficient of resistivity (TCR). We found that as the absolute TCR value increased, specifying an elevated degree of disorder, the free charge carrier Drude response decreases, indicating the enhanced charge carrier localization. Moreover, we found that the pronounced changes occur at the extended spectral range, involving not only the Drude resonance, but also the higher-energy Lorentz bands, in evidence of the attendant electronic correlations. We propose that the charge carrier localization, or delocalization, is accompanied by the pronounced electronic band structure reconstruction due to many-body effects, which may be the key feature for understanding the physics of highly disordered metals.
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Submitted 22 December, 2021;
originally announced December 2021.
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Localization effects in the disordered Ta interlayer of multilayer Ta-FeNi films: Evidence from dc transport and spectroscopic ellipsometry study
Authors:
N. N. Kovaleva,
D. Chvostova,
O. Pacherova,
L. Fekete,
K. I. Kugel,
F. A. Pudonin,
A. Dejneka
Abstract:
Using dc transport and wide-band spectroscopic ellipsometry techniques, we study localization effects in the disordered metallic Ta interlayer of different thickness in the multilayer films (MLFs) (Ta - FeNi)_N grown by rf sputtering deposition. In the grown MLFs, the FeNi layer was 0.52 nm thick, while the Ta layer thickness varied between 1.2 and 4.6 nm. The Ta layer dielectric function was extr…
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Using dc transport and wide-band spectroscopic ellipsometry techniques, we study localization effects in the disordered metallic Ta interlayer of different thickness in the multilayer films (MLFs) (Ta - FeNi)_N grown by rf sputtering deposition. In the grown MLFs, the FeNi layer was 0.52 nm thick, while the Ta layer thickness varied between 1.2 and 4.6 nm. The Ta layer dielectric function was extracted from the Drude-Lorentz simulation. The dc transport study of the MLFs implies non-metallic (dr/dT<0) behavior, with negative temperature coefficient of resistivity (TCR). The TCR absolute value increases upon increasing the Ta interlayer thickness, indicating enhanced electron localization. With that, the free charge carrier Drude response decreases. Moreover, the pronounced changes occur at the extended spectral range, involving the higher-energy Lorentz bands. The Drude dc conductivity drops below the weak localization limit for the thick Ta layer. The global band structure reconstruction may indicate the formation of a nearly localized many-body electron state.
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Submitted 21 December, 2021;
originally announced December 2021.
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Control of Mooij correlations at the nanoscale in the disordered metallic Ta - nanoisland FeNi multilayers
Authors:
N. N. Kovaleva,
F. V. Kusmartsev,
A. B. Mekhiya,
I. N. Trunkin,
D. Chvostova,
A. B. Davydov,
L. N. Oveshnikov,
O. Pacherova,
I. A. Sherstnev,
A. Kusmartseva,
K. I. Kugel,
A. Dejneka,
F. A. Pudonin,
Y. Luo,
B. A. Aronzon
Abstract:
Localisation phenomena in highly disordered metals close to the extreme conditions determined by the Mott-Ioffe-Regel (MIR) limit when the electron mean free path is approximately equal to the interatomic distance is a challenging problem. Here, to shed light on these localisation phenomena, we studied the dc transport and optical conductivity properties of nanoscaled multilayered films composed o…
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Localisation phenomena in highly disordered metals close to the extreme conditions determined by the Mott-Ioffe-Regel (MIR) limit when the electron mean free path is approximately equal to the interatomic distance is a challenging problem. Here, to shed light on these localisation phenomena, we studied the dc transport and optical conductivity properties of nanoscaled multilayered films composed of disordered metallic Ta and magnetic FeNi nanoisland layers, where ferromagnetic FeNi nanoislands have giant magnetic moments of 10^3-10^5 Bohr magnetons (μ_B). In these multilayered structures, FeNi nanoisland giant magnetic moments are interacting due to the indirect exchange forces acting via the Ta electron subsystem. We discovered that the localisation phenomena in the disordered Ta layer lead to a decrease in the Drude contribution of free charge carriers and the appearance of the low-energy electronic excitations in the 1-2 eV spectral range characteristic of electronic correlations, which may accompany the formation of electronic inhomogeneities. From the consistent results of the dc transport and optical studies we found that with an increase in the FeNi layer thickness across the percolation threshold evolution from the superferromagnetic to ferromagnetic behaviour within the FeNi layer leads to the delocalisation of Ta electrons from the associated localised electronic states. On the contrary, we discovered that when the FeNi layer is discontinuous and represented by randomly distributed superparamagnetic FeNi nanoislands, the Ta layer normalized dc conductivity falls down below the MIR limit by about 60%. The discovered effect leading to the dc conductivity fall below the MIR limit can be associated with non-ergodicity and purely quantum (many-body) localisation phenomena, which need to be challenged further.
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Submitted 8 December, 2020; v1 submitted 22 August, 2020;
originally announced August 2020.
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Efficient Green Emission from Edge States in Graphene Perforated by Nitrogen Plasma Treatment
Authors:
N N Kovaleva,
D Chvostova,
Z Potůček,
H D Cho,
Xiao Fu,
L Fekete,
J Pokorny,
Z Bryknar,
K I Kugel,
A Dejneka,
T W Kang,
Gennady N Panin,
F V Kusmartsev
Abstract:
Plasma functionalization of graphene is one of the facile ways to tune its doping level without the need for wet chemicals making graphene photoluminescent. Microscopic corrugations in the two-dimensional structure of bilayer CVD graphene having a quasi-free-suspended top layer, such as graphene ripples, nanodomes, and bubbles, may significantly enhance local reactivity leading to etching effects…
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Plasma functionalization of graphene is one of the facile ways to tune its doping level without the need for wet chemicals making graphene photoluminescent. Microscopic corrugations in the two-dimensional structure of bilayer CVD graphene having a quasi-free-suspended top layer, such as graphene ripples, nanodomes, and bubbles, may significantly enhance local reactivity leading to etching effects on exposure to plasma. Here, we discovered that bilayer CVD graphene treated with nitrogen plasma exhibits efficient UV-green-red emission, where the excitation at 250 nm leads to photoluminescence with the peaks at 390, 470, and 620 nm, respectively. By using Raman scattering and spectroscopic ellipsometry, we investigated doping effects induced by oxygen or nitrogen plasma on the optical properties of single- and bilayer CVD graphene. The surface morphology of the samples was studied by atomic force microscopy. It is revealed that the top sheet of bilayer graphene becomes perforated after the treatment by nitrogen plasma. Our comprehensive study indicates that the dominant green emission is associated with the edge defect structure of perforated graphene filled with nitrogen. The discovered efficient emission appearing in nitrogen plasma treated perforated graphene may have a significant potential for the development of advanced optoelectronic materials.
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Submitted 19 November, 2019;
originally announced November 2019.
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Tensile strain induced changes in the optical spectra of SrTiO3 epitaxial thin films
Authors:
A. Dejneka,
M. Tyunina,
J. Narkilahti,
J. Levoska,
D. Chvostova,
L. Jastrabik,
V. A. Trepakov
Abstract:
Effect of biaxial tensile strains on optical functions and band edge transitions of ultra thin epitaxial films was studied using as an example a 13 nm thick SrTiO3 films deposited on KTaO3(100) single-crystal substrates. Optical functions were determined by spectroscopic ellipsometry technique. It was found that tensile strains result in a shift of the low energy band gap optical transitions to…
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Effect of biaxial tensile strains on optical functions and band edge transitions of ultra thin epitaxial films was studied using as an example a 13 nm thick SrTiO3 films deposited on KTaO3(100) single-crystal substrates. Optical functions were determined by spectroscopic ellipsometry technique. It was found that tensile strains result in a shift of the low energy band gap optical transitions to higher energies and decrease the refractive index in the visible region. Comparison of the optical spectra for strained SrTiO3 films and for homoepitaxial strain-free SrTiO3:Cr (0.01 %at.) films deposited on SrTiO3(100) single crystalline substrates showed that this shift could not be related to technological imperfections or to reduced thickness. The observed effect is connected with changes in the lowest conduction and in the top valence bands that are due to increase of the in-plane lattice constant and/or onset of polar phase in the tensile strain-induced ultra-thin epitaxial SrTiO3 films.
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Submitted 23 November, 2009;
originally announced November 2009.
