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Edge states and ballistic transport in zig-zag graphene ribbons: the role of SiC polytypes
Authors:
A. L. Miettinen,
M. S. Nevius,
W. Ko,
M. Kolmer,
A. -P Li,
M. N. Nair,
A. Taleb-Ibrahimi,
B. Kierren,
L. Moreau,
E. H. Conrad,
A. Tejeda
Abstract:
Zig-zag edge graphene ribbons grown on 6H-SiC facets are ballistic conductors. It has been assumed that zig-zag graphene ribbons grown on 4H-SiC would also be ballistic. However, in this work we show that SiC polytype matters; ballistic graphene ribbons only grow on 6H SiC. 4H and 4H-passivated ribbons are diffusive conductors. Detailed photoemmision and microscopy studies show that 6H-SiC sidewal…
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Zig-zag edge graphene ribbons grown on 6H-SiC facets are ballistic conductors. It has been assumed that zig-zag graphene ribbons grown on 4H-SiC would also be ballistic. However, in this work we show that SiC polytype matters; ballistic graphene ribbons only grow on 6H SiC. 4H and 4H-passivated ribbons are diffusive conductors. Detailed photoemmision and microscopy studies show that 6H-SiC sidewalls zig-zag ribbons are metallic with a pair of n-doped edge states associated with asymmetric edge terminations, In contrast, 4H-SiC zig-zag ribbons are strongly bonded to the SiC; severely distorting the ribbon's $π$-bands. $\text{H}_2$-passivation of the 4H ribbons returns them to a metallic state but show no evidence of edge states.
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Submitted 12 March, 2019;
originally announced March 2019.
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Exploring interlayer Dirac cone coupling in commensurately rotated few-layer graphene on SiC(000-1)
Authors:
C. Mathieu,
E. H. Conrad,
F. Wang,
J. E. Rault,
V. Feyer,
C. M. Schneider,
O. Renault,
N. Barrett
Abstract:
We investigate electronic band-structure images in reciprocal space of few layer graphene epitaxially grown on SiC(000-1). In addition to the observation of commensurate rotation angles of the graphene layers, the k-space images recorded near the Fermi edge highlight structures originating from diffraction of the Dirac cones due to the relative rotation of adjacent layers. The 21.9° and 27° rotati…
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We investigate electronic band-structure images in reciprocal space of few layer graphene epitaxially grown on SiC(000-1). In addition to the observation of commensurate rotation angles of the graphene layers, the k-space images recorded near the Fermi edge highlight structures originating from diffraction of the Dirac cones due to the relative rotation of adjacent layers. The 21.9° and 27° rotation angles between two sheets of graphene are responsible for a periodic pattern that can be described with a superlattice unit cells. The superlattice generates replicas of Dirac cones with smaller wave vectors, due to a Brillouin zone folding.
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Submitted 18 June, 2018;
originally announced June 2018.
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The structure and evolution of semiconducting buffer graphene grown on SiC(0001)
Authors:
M. Conrad,
J. Rault,
Y. Utsumi,
Y. Garreau,
A. Vlad,
A. Coati,
J. -P. Rueff,
P. F. Miceli,
E. H. Conrad
Abstract:
Using highly controlled coverages of graphene on SiC(0001), we have studied the structure of the first graphene layer that grows on the SiC interface. This layer, known as the buffer layer, is semiconducting. Using x-ray reflectivity and x-ray standing waves analysis we have performed a comparative study of the buffer layer structure with and without an additional monolayer graphene layer above it…
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Using highly controlled coverages of graphene on SiC(0001), we have studied the structure of the first graphene layer that grows on the SiC interface. This layer, known as the buffer layer, is semiconducting. Using x-ray reflectivity and x-ray standing waves analysis we have performed a comparative study of the buffer layer structure with and without an additional monolayer graphene layer above it. We show that no more than 26\% of the buffer carbon is covalently bonded to Si in the SiC interface. We also show that the top SiC bilayer is Si depleted and is the likely the cause of the incommensuration previously observed in this system. When a monolayer graphene layer forms above the buffer, the buffer layer becomes less corrugated with signs of a change in the bonding geometry with the SiC interface. At the same time, the entire SiC interface becomes more disordered, presumably due to entropy associated with the higher growth temperature.
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Submitted 7 July, 2017;
originally announced July 2017.
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Epigraphene : epitaxial graphene on silicon carbide
Authors:
Claire Berger,
Edward H. Conrad,
Walt A. de Heer
Abstract:
This article presents a review of epitaxial graphene on silicon carbide, from fabrication to properties, put in the context of other forms of graphene.
This article presents a review of epitaxial graphene on silicon carbide, from fabrication to properties, put in the context of other forms of graphene.
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Submitted 2 April, 2017;
originally announced April 2017.
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Semiconducting graphene from highly ordered substrate interactions
Authors:
M. S. Nevius,
M. Conrad,
F. Wang,
A. Celis,
M. N. Nair,
A. Taleb-Ibrahimi,
A. Tejeda,
E. H. Conrad
Abstract:
While numerous methods have been proposed to produce semiconducting graphene, a significant bandgap has never been demonstrated. The reason is that, regardless of the theoretical gap formation mechanism, disorder at the sub-nanometer scale prevents the required chiral symmetry breaking necessary to open a bandgap in graphene. In this work, we show for the first time that a 2D semiconducting graphe…
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While numerous methods have been proposed to produce semiconducting graphene, a significant bandgap has never been demonstrated. The reason is that, regardless of the theoretical gap formation mechanism, disorder at the sub-nanometer scale prevents the required chiral symmetry breaking necessary to open a bandgap in graphene. In this work, we show for the first time that a 2D semiconducting graphene film can be made by epitaxial growth. Using improved growth methods, we show by direct band measurements that a bandgap greater than 0.5 eV can be produced in the first graphene layer grown on the SiC(0001) surface. This work demonstrates that order, a property that remains lacking in other graphene systems, is key to producing electronically viable semiconducting graphene.
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Submitted 3 May, 2015;
originally announced May 2015.
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A wide band gap metal-semiconductor-metal nanostructure made entirely from graphene
Authors:
J. Hicks,
A. Tejeda,
A. Taleb-Ibrahimi,
M. S. Nevius,
F. Wang,
K. Shepperd,
J. Palmer,
F. Bertran,
P. Le Fèvre,
J. Kunc,
W. A. de Heer,
C. Berger,
E. H. Conrad
Abstract:
A blueprint for producing scalable digital graphene electronics has remained elusive. Current methods to produce semiconducting-metallic graphene networks all suffer from either stringent lithographic demands that prevent reproducibility, process-induced disorder in the graphene, or scalability issues. Using angle resolved photoemission, we have discovered a unique one dimensional metallic-semicon…
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A blueprint for producing scalable digital graphene electronics has remained elusive. Current methods to produce semiconducting-metallic graphene networks all suffer from either stringent lithographic demands that prevent reproducibility, process-induced disorder in the graphene, or scalability issues. Using angle resolved photoemission, we have discovered a unique one dimensional metallic-semiconducting-metallic junction made entirely from graphene, and produced without chemical functionalization or finite size patterning. The junction is produced by taking advantage of the inherent, atomically ordered, substrate-graphene interaction when it is grown on SiC, in this case when graphene is forced to grow over patterned SiC steps. This scalable bottomup approach allows us to produce a semiconducting graphene strip whose width is precisely defined within a few graphene lattice constants, a level of precision entirely outside modern lithographic limits. The architecture demonstrated in this work is so robust that variations in the average electronic band structure of thousands of these patterned ribbons have little variation over length scales tens of microns long. The semiconducting graphene has a topologically defined few nanometer wide region with an energy gap greater than 0.5 eV in an otherwise continuous metallic graphene sheet. This work demonstrates how the graphene-substrate interaction can be used as a powerful tool to scalably modify graphene's electronic structure and opens a new direction in graphene electronics research.
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Submitted 19 October, 2012; v1 submitted 12 October, 2012;
originally announced October 2012.
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Silicon intercalation into the graphene-SiC interface
Authors:
F. Wang,
K. Shepperd,
J. Hicks,
M. S. Nevius,
H. Tinkey,
A. Tejeda,
A. Taleb-Ibrahimi,
F. Bertran,
P. Le F`evre,
D. B. Torrance,
P. First,
W. A. de Heer,
A. A. Zakharov,
E. H. Conrad
Abstract:
In this work we use LEEM, XPEEM and XPS to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room temperature onto multilayer graphene films grown on the SiC(000[`1]) rapidly diffuses to the graphene-SiC interface when heated to temperatures above 1020. In a sequence of depositions, we have been able to intercalate ~ 6…
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In this work we use LEEM, XPEEM and XPS to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room temperature onto multilayer graphene films grown on the SiC(000[`1]) rapidly diffuses to the graphene-SiC interface when heated to temperatures above 1020. In a sequence of depositions, we have been able to intercalate ~ 6 ML of Si into the graphene-SiC interface.
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Submitted 12 November, 2011;
originally announced November 2011.
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Microscopic correlation between chemical and electronic states in epitaxial graphene on SiC(000-1)
Authors:
C. Mathieu,
N. Barrett,
J. Rault,
Y. Y. Mi,
B. Zhang,
W. A. de Heer,
C. Berger,
E. H. Conrad,
O. Renault
Abstract:
We present energy filtered electron emission spectromicroscopy with spatial and wave-vector resolution on few layer epitaxial graphene on SiC$(000-1) grown by furnace annealing. Low energy electron microscopy shows that more than 80% of the sample is covered by 2-3 graphene layers. C1s spectromicroscopy provides an independent measurement of the graphene thickness distribution map. The work functi…
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We present energy filtered electron emission spectromicroscopy with spatial and wave-vector resolution on few layer epitaxial graphene on SiC$(000-1) grown by furnace annealing. Low energy electron microscopy shows that more than 80% of the sample is covered by 2-3 graphene layers. C1s spectromicroscopy provides an independent measurement of the graphene thickness distribution map. The work function, measured by photoelectron emission microscopy (PEEM), varies across the surface from 4.34 to 4.50eV according to both the graphene thickness and the graphene-SiC interface chemical state. At least two SiC surface chemical states (i.e., two different SiC surface structures) are present at the graphene/SiC interface. Charge transfer occurs at each graphene/SiC interface. K-space PEEM gives 3D maps of the k_|| pi - pi* band dispersion in micron scale regions show that the Dirac point shifts as a function of graphene thickness. Novel Bragg diffraction of the Dirac cones via the superlattice formed by the commensurately rotated graphene sheets is observed. The experiments underline the importance of lateral and spectroscopic resolution on the scale of future electronic devices in order to precisely characterize the transport properties and band alignments.
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Submitted 7 April, 2011;
originally announced April 2011.
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Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide
Authors:
Walt. A. de Heer,
Claire Berger,
Ming Ruan,
Mike Sprinkle,
Xuebin Li,
Yike Hu,
Baiqian Zhang,
John Hankinson,
Edward H. Conrad
Abstract:
After the pioneering investigations into graphene-based electronics at Georgia Tech (GT), great strides have been made developing epitaxial graphene on silicon carbide (EG) as a new electronic material. EG has not only demonstrated its potential for large scale applications, it also has become an invaluable material for fundamental two-dimensional electron gas physics showing that only EG is on ro…
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After the pioneering investigations into graphene-based electronics at Georgia Tech (GT), great strides have been made developing epitaxial graphene on silicon carbide (EG) as a new electronic material. EG has not only demonstrated its potential for large scale applications, it also has become an invaluable material for fundamental two-dimensional electron gas physics showing that only EG is on route to define future graphene science. It was long known that graphene mono and multilayers grow on SiC crystals at high temperatures in ultra-high vacuum. At these temperatures, silicon sublimes from the surface and the carbon rich surface layer transforms to graphene. However the quality of the graphene produced in ultrahigh vacuum is poor due to the high sublimation rates at relatively low temperatures. The GT team developed growth methods involving encapsulating the SiC crystals in graphite enclosures, thereby sequestering the evaporated silicon and bringing growth process closer to equilibrium. In this confinement controlled sublimation (CCS) process, very high quality graphene is grown on both polar faces of the SiC crystals. Since 2003, over 50 publications used CCS grown graphene, where it is known as the "furnace grown" graphene. Graphene multilayers grown on the carbon-terminated face of SiC, using the CCS method, were shown to consist of decoupled high mobility graphene layers. The CCS method is now applied on structured silicon carbide surfaces to produce high mobility nano-patterned graphene structures thereby demonstrating that EG is a viable contender for next-generation electronics. Here we present the CCS method and demonstrate several of epitaxial graphene's outstanding properties and applications.
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Submitted 17 March, 2011;
originally announced March 2011.
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Symmetry breaking in commensurate graphene rotational stacking; a comparison of theory and experiment
Authors:
J. Hicks,
M. Sprinkle,
K. Shepperd,
F. Wang,
A. Tejeda,
A. Taleb-Ibrahimi,
F. Bertran,
P. Le Fèvre,
W. A. de Heer,
C. Berger,
E. H. Conrad
Abstract:
Graphene stacked in a Bernal configuration (60 degrees relative rotations between sheets) differs electronically from isolated graphene due to the broken symmetry introduced by interlayer bonds forming between only one of the two graphene unit cell atoms. A variety of experiments have shown that non-Bernal rotations restore this broken symmetry; consequently, these stacking varieties have been the…
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Graphene stacked in a Bernal configuration (60 degrees relative rotations between sheets) differs electronically from isolated graphene due to the broken symmetry introduced by interlayer bonds forming between only one of the two graphene unit cell atoms. A variety of experiments have shown that non-Bernal rotations restore this broken symmetry; consequently, these stacking varieties have been the subject of intensive theoretical interest. Most theories predict substantial changes in the band structure ranging from the development of a Van Hove singularity and an angle dependent electron localization that causes the Fermi velocity to go to zero as the relative rotation angle between sheets goes to zero. In this work we show by direct measurement that non-Bernal rotations preserve the graphene symmetry with only a small perturbation due to weak effective interlayer coupling. We detect neither a Van Hove singularity nor any significant change in the Fermi velocity. These results suggest significant problems in our current theoretical understanding of the origins of the band structure of this material.
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Submitted 2 December, 2010;
originally announced December 2010.
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Structure and electronic properties of epitaxial graphene grown on SiC
Authors:
M. Sprinkle,
J. Hicks,
A. Tejeda,
A. Taleb-Ibrahimi,
P. Le Fèvre,
F. Bertran,
H. Tinkey,
M. C. Clark,
P. Soukiassian,
D. Martinotti,
J. Hass,
W. A. de Heer,
C. Berger,
E. H. Conrad
Abstract:
We review progress in developing epitaxial graphene as a material for carbon electronics. In particular, improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's electronic properties are discussed. Although graphene grown on both polar faces of SiC is addressed, our discussions will focus on graphene grown on the (000-1) C-face of SiC…
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We review progress in developing epitaxial graphene as a material for carbon electronics. In particular, improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's electronic properties are discussed. Although graphene grown on both polar faces of SiC is addressed, our discussions will focus on graphene grown on the (000-1) C-face of SiC. The unique properties of C-face multilayer epitaxial graphene have become apparent. These films behave electronically like a stack of nearly independent graphene sheets rather than a thin Bernal-stacked graphite sample. The origin of multilayer graphene's electronic behavior is its unique highly-ordered stacking of non-Bernal rotated graphene planes. While these rotations do not significantly affect the inter-layer interactions, they do break the stacking symmetry of graphite. It is this broken symmetry that causes each sheet to behave like an isolated graphene plane.
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Submitted 21 January, 2010;
originally announced January 2010.
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First direct observation of a nearly ideal graphene band structure
Authors:
M. Sprinkle,
D. Siegel,
Y. Hu,
J. Hicks,
P. Soukiassian,
A. Tejeda,
A. Taleb-Ibrahimi,
P. Le Fèvre,
F. Bertran,
C. Berger,
W. A. de Heer,
A. Lanzara,
E. H. Conrad
Abstract:
Angle-resolved photoemission and X-ray diffraction experiments show that multilayer epitaxial graphene grown on the SiC(000-1) surface is a new form of carbon that is composed of effectively isolated graphene sheets. The unique rotational stacking of these films cause adjacent graphene layers to electronically decouple leading to a set of nearly independent linearly dispersing bands (Dirac cones…
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Angle-resolved photoemission and X-ray diffraction experiments show that multilayer epitaxial graphene grown on the SiC(000-1) surface is a new form of carbon that is composed of effectively isolated graphene sheets. The unique rotational stacking of these films cause adjacent graphene layers to electronically decouple leading to a set of nearly independent linearly dispersing bands (Dirac cones) at the graphene K-point. Each cone corresponds to an individual macro-scale graphene sheet in a multilayer stack where AB-stacked sheets can be considered as low density faults.
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Submitted 30 July, 2009;
originally announced July 2009.
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The interface structure of epitaxial graphene grown on 4H-SiC(0001)
Authors:
J. Hass,
J. E. Millan-Otoya,
P. N. First,
E. H. Conrad
Abstract:
We present a structural analysis of the graphene-4HSiC(0001) interface using surface x-ray reflectivity. We find that the interface is composed of an extended reconstruction of two SiC bilayers. The interface directly below the first graphene sheet is an extended layer that is more than twice the thickness of a bulk SiC bilayer (~1.7A compared to 0.63A). The distance from this interface layer to…
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We present a structural analysis of the graphene-4HSiC(0001) interface using surface x-ray reflectivity. We find that the interface is composed of an extended reconstruction of two SiC bilayers. The interface directly below the first graphene sheet is an extended layer that is more than twice the thickness of a bulk SiC bilayer (~1.7A compared to 0.63A). The distance from this interface layer to the first graphene sheet is much smaller than the graphite interlayer spacing but larger than the same distance measured for graphene grown on the (000-1) surface, as predicted previously by ab intio calculations.
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Submitted 10 August, 2008;
originally announced August 2008.
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Rotational stacking and its electronic effects on graphene films grown on 4H-SiC$(000\bar{1})$
Authors:
J. Hass,
F. Varchon,
J. E. Millan-Otoya,
M. Sprinkle,
W. A. de Heer,
C. Berger,
P. N. First,
L. Magaud,
E. H. Conrad
Abstract:
We examine the stacking order of multilayer graphene grown on the SiC$(000\bar{1})$ surface using low-energy electron diffraction and surface X-ray diffraction. We show that the films contain a high density of rotational stacking faults caused by three types of rotated graphene: sheets rotated $30^\circ$ and $\pm 2.20^\circ$ relative to the SiC substrate. These angles are unique because they cor…
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We examine the stacking order of multilayer graphene grown on the SiC$(000\bar{1})$ surface using low-energy electron diffraction and surface X-ray diffraction. We show that the films contain a high density of rotational stacking faults caused by three types of rotated graphene: sheets rotated $30^\circ$ and $\pm 2.20^\circ$ relative to the SiC substrate. These angles are unique because they correspond to commensurate phases of layered graphene, both with itself and with the SiC substrate. {\it Ab intio} calculations show that these rotational phases electronically decouple adjacent graphene layers. The band structure from graphene at fault boundaries displays linear energy dispersion at the $K$-point (Dirac cones), nearly identical to that of a single graphene sheet.
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Submitted 14 June, 2007;
originally announced June 2007.
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Epitaxial graphene
Authors:
Walt A. de Heer,
Claire Berger,
Xiaosong Wu,
Phillip N. First,
Edward H. Conrad,
Xuebin Li,
Tianbo Li,
Michael Sprinkle,
Joanna Hass,
Marcin L. Sadowski,
Marek Potemski,
Gerard Martinez
Abstract:
Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field…
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Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties which may persists above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high mobility epitaxial graphene. It appears that the effect is suppressed due to absence of localized states in the bulk of the material.Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low dissipation high-speed nanoelectronics.
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Submitted 3 April, 2007;
originally announced April 2007.
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The structural properties of the multi-layer graphene/4H-SiC(000-1) system as determined by Surface X-ray Diffraction
Authors:
J. Hass,
R. Feng,
J. E. Millan-Otoya,
X. Li,
M. Sprinkle,
P. N. First,
C. Berger,
W. A. de Heer,
E. H. Conrad
Abstract:
We present a structural analysis of the multi-layer graphene-4HSiC(000-1}) system using Surface X-Ray Reflectivity. We show for the first time that graphene films grown on the C-terminated (000-1}) surface have a graphene-substrate bond length that is very short (0.162nm). The measured distance rules out a weak Van der Waals interaction to the substrate and instead indicates a strong bond betwee…
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We present a structural analysis of the multi-layer graphene-4HSiC(000-1}) system using Surface X-Ray Reflectivity. We show for the first time that graphene films grown on the C-terminated (000-1}) surface have a graphene-substrate bond length that is very short (0.162nm). The measured distance rules out a weak Van der Waals interaction to the substrate and instead indicates a strong bond between the first graphene layer and the bulk as predicted by ab-initio calculations. The measurements also indicate that multi-layer graphene grows in a near turbostratic mode on this surface. This result may explain the lack of a broken graphene symmetry inferred from conduction measurements on this system [C. Berger et al., Science 312, 1191 (2006)].
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Submitted 23 February, 2007;
originally announced February 2007.
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Electronic structure of epitaxial graphene layers on SiC: effect of the substrate
Authors:
François Varchon,
R. Feng,
J. Hass,
X. Li,
Bich N. Nguyen,
Cécile Naud,
Pierre Mallet,
Jean Yves Veuillen,
Claire Berger,
E. H. Conrad,
Laurence Magaud
Abstract:
Recent transport measurements on thin graphite films grown on SiC show large coherence lengths and anomalous integer quantum Hall effects expected for isolated graphene sheets. This is the case eventhough the layer-substrate epitaxy of these films implies a strong interface bond that should induce perturbations in the graphene electronic structure. Our DFT calculations confirm this strong substr…
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Recent transport measurements on thin graphite films grown on SiC show large coherence lengths and anomalous integer quantum Hall effects expected for isolated graphene sheets. This is the case eventhough the layer-substrate epitaxy of these films implies a strong interface bond that should induce perturbations in the graphene electronic structure. Our DFT calculations confirm this strong substrate-graphite bond in the first adsorbed carbon layer that prevents any graphitic electronic properties for this layer. However, the graphitic nature of the film is recovered by the second and third absorbed layers. This effect is seen in both the (0001)and $(000\bar{1})$ 4H SiC surfaces. We also present evidence of a charge transfer that depends on the interface geometry. It causes the graphene to be doped and gives rise to a gap opening at the Dirac point after 3 carbon layers are deposited in agreement with recent ARPES experiments (T.Ohta et al, Science {\bf 313} (2006) 951).
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Submitted 13 February, 2007;
originally announced February 2007.
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Highly-ordered graphene for two dimensional electronics
Authors:
J. Hass,
C. A. Jeffrey,
R. Feng,
T. Li,
X. Li,
Z. Song,
C. Berger,
W. A. de Heer,
P. N. First,
E. H. Conrad
Abstract:
With expanding interest in graphene-based electronics, it is crucial that high quality graphene films be grown. Sublimation of Si from the 4H-SiC(0001) Si-terminated) surface in ultrahigh vacuum is a demonstrated method to produce epitaxial graphene sheets on a semiconductor. In this paper we show that graphene grown from the SiC$(000\bar{1})$ (C-terminated) surface are of higher quality than th…
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With expanding interest in graphene-based electronics, it is crucial that high quality graphene films be grown. Sublimation of Si from the 4H-SiC(0001) Si-terminated) surface in ultrahigh vacuum is a demonstrated method to produce epitaxial graphene sheets on a semiconductor. In this paper we show that graphene grown from the SiC$(000\bar{1})$ (C-terminated) surface are of higher quality than those previously grown on SiC(0001). Graphene grown on the C-face can have structural domain sizes more than three times larger than those grown on the Si-face while at the same time reducing SiC substrate disorder from sublimation by an order of magnitude.
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Submitted 7 April, 2006;
originally announced April 2006.
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Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
Authors:
Claire Berger,
Zhimin Song,
Tianbo Li,
Xuebin Li,
Asmerom Y. Ogbazghi,
Rui Feng,
Zhenting Dai,
Alexei N. Marchenkov,
Edward H. Conrad,
Phillip N. First,
Walt A. de Heer
Abstract:
We have produced ultrathin epitaxial graphite films which show remarkable 2D electron gas (2DEG) behavior. The films, composed of typically 3 graphene sheets, were grown by thermal decomposition on the (0001) surface of 6H-SiC, and characterized by surface-science techniques. The low-temperature conductance spans a range of localization regimes according to the structural state (square resistanc…
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We have produced ultrathin epitaxial graphite films which show remarkable 2D electron gas (2DEG) behavior. The films, composed of typically 3 graphene sheets, were grown by thermal decomposition on the (0001) surface of 6H-SiC, and characterized by surface-science techniques. The low-temperature conductance spans a range of localization regimes according to the structural state (square resistance 1.5 kOhm to 225 kOhm at 4 K, with positive magnetoconductance). Low resistance samples show characteristics of weak-localization in two dimensions, from which we estimate elastic and inelastic mean free paths. At low field, the Hall resistance is linear up to 4.5 T, which is well-explained by n-type carriers of density 10^{12} cm^{-2} per graphene sheet. The most highly-ordered sample exhibits Shubnikov - de Haas oscillations which correspond to nonlinearities observed in the Hall resistance, indicating a potential new quantum Hall system. We show that the high-mobility films can be patterned via conventional lithographic techniques, and we demonstrate modulation of the film conductance using a top-gate electrode. These key elements suggest electronic device applications based on nano-patterned epitaxial graphene (NPEG), with the potential for large-scale integration.
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Submitted 10 October, 2004;
originally announced October 2004.
