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Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interface
Authors:
Megan Cowie,
Procopios C. Constantinou,
Neil J. Curson,
Taylor J. Z. Stock,
Peter Grutter
Abstract:
We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO$_2$ interface. Our measurements demonstrate that two-state fluctuations are localized at interfacial traps, with bias-dependent rates and amplitudes. These two-level systems lead to correlated carrier number and mobility fluctuations with a range of characteristic timescales; taken together as an ensemb…
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We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO$_2$ interface. Our measurements demonstrate that two-state fluctuations are localized at interfacial traps, with bias-dependent rates and amplitudes. These two-level systems lead to correlated carrier number and mobility fluctuations with a range of characteristic timescales; taken together as an ensemble, they give rise to a $1/f$ power spectral trend. Such individual defect fluctuations at the Si/SiO$_2$ interface impair the performance and reliability of nanoscale semiconductor devices, and will be a significant source of noise in semiconductor-based quantum sensors and computers. The fluctuations measured here are associated with a four-fold competition of rates, including slow two-state switching on the order of seconds and, in one state, fast switching on the order of nanoseconds which is associated with energy loss.
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Submitted 14 March, 2024; v1 submitted 11 March, 2024;
originally announced March 2024.
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Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication
Authors:
Taylor J. Z. Stock,
Oliver Warschkow,
Procopios C. Constantinou,
David R. Bowler,
Steven R. Schofield,
Neil J. Curson
Abstract:
Artificial lattices constructed from individual dopant atoms within a semiconductor crystal hold promise to provide novel materials with tailored electronic, magnetic, and optical properties. These custom engineered lattices are anticipated to enable new, fundamental discoveries in condensed matter physics and lead to the creation of new semiconductor technologies including analog quantum simulato…
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Artificial lattices constructed from individual dopant atoms within a semiconductor crystal hold promise to provide novel materials with tailored electronic, magnetic, and optical properties. These custom engineered lattices are anticipated to enable new, fundamental discoveries in condensed matter physics and lead to the creation of new semiconductor technologies including analog quantum simulators and universal solid-state quantum computers. In this work, we report precise and repeatable, substitutional incorporation of single arsenic atoms into a silicon lattice. We employ a combination of scanning tunnelling microscopy hydrogen resist lithography and a detailed statistical exploration of the chemistry of arsine on the hydrogen terminated silicon (001) surface, to show that single arsenic dopants can be deterministically placed within four silicon lattice sites and incorporated with 97$\pm$2% yield. These findings bring us closer to the ultimate frontier in semiconductor technology: the deterministic assembly of atomically precise dopant and qubit arrays at arbitrarily large scales.
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Submitted 9 November, 2023;
originally announced November 2023.
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Resistless EUV lithography: photon-induced oxide patterning on silicon
Authors:
Li-Ting Tseng,
Prajith Karadan,
Dimitrios Kazazis,
Procopios C. Constantinou,
Taylor J. Z. Stock,
Neil J. Curson,
Steven R. Schofield,
Matthias Muntwiler,
Gabriel Aeppli,
Yasin Ekinci
Abstract:
In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated Si(100) surface in the absence of a photoresist. EUV lithography is the leading lithography technique in semiconductor manufacturing due to its high resolution and throughput, but future progress in resolution can be hampered because of the inherent limitations of the resists. We show that EUV photons ca…
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In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated Si(100) surface in the absence of a photoresist. EUV lithography is the leading lithography technique in semiconductor manufacturing due to its high resolution and throughput, but future progress in resolution can be hampered because of the inherent limitations of the resists. We show that EUV photons can induce surface reactions on a partially H-terminated Si surface and assist the growth of an oxide layer, which serves as an etch mask. This mechanism is different from the H-desorption in scanning tunneling microscopy-based lithography. We achieve SiO2/Si gratings with 75 nm half-pitch and 31 nm height, demonstrating the efficacy of the method and the feasibility of patterning with EUV lithography without the use of a photoresist. Further development of the resistless EUV lithography method can be a viable approach to nm-scale lithography by overcoming the inherent resolution and roughness limitations of photoresist materials.
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Submitted 2 October, 2023;
originally announced October 2023.
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Altermagnetic lifting of Kramers spin degeneracy
Authors:
J. Krempaský,
L. Šmejkal,
S. W. D'Souza,
M. Hajlaoui,
G. Springholz,
K. Uhlířová,
F. Alarab,
P. C. Constantinou,
V. Strokov,
D. Usanov,
W. R. Pudelko,
R. González-Hernández,
A. Birk Hellenes,
Z. Jansa,
H. Reichlová,
Z. Šobáň,
R. D. Gonzalez Betancourt,
P. Wadley,
J. Sinova,
D. Kriegner,
J. Minár,
J. H. Dil,
T. Jungwirth
Abstract:
Lifted Kramers spin-degeneracy has been among the central topics of condensed-matter physics since the dawn of the band theory of solids. It underpins established practical applications as well as current frontier research, ranging from magnetic-memory technology to topological quantum matter. Traditionally, lifted Kramers spin-degeneracy has been considered to originate from two possible internal…
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Lifted Kramers spin-degeneracy has been among the central topics of condensed-matter physics since the dawn of the band theory of solids. It underpins established practical applications as well as current frontier research, ranging from magnetic-memory technology to topological quantum matter. Traditionally, lifted Kramers spin-degeneracy has been considered to originate from two possible internal symmetry-breaking mechanisms. The first one refers to time-reversal symmetry breaking by magnetization of ferromagnets, and tends to be strong due to the non-relativistic exchange-coupling origin. The second mechanism applies to crystals with broken inversion symmetry, and tends to be comparatively weaker as it originates from the relativistic spin-orbit coupling. A recent theory work based on spin-symmetry classification has identified an unconventional magnetic phase, dubbed altermagnetic, that allows for lifting the Kramers spin degeneracy without net magnetization and inversion-symmetry breaking. Here we provide the confirmation using photoemission spectroscopy and ab initio calculations. We identify two distinct unconventional mechanisms of lifted Kramers spin degeneracy generated by the altermagnetic phase of centrosymmetric MnTe with vanishing net magnetization. Our observation of the altermagnetic lifting of the Kramers spin degeneracy can have broad consequences in magnetism. It motivates exploration and exploitation of the unconventional nature of this magnetic phase in an extended family of materials, ranging from insulators and semiconductors to metals and superconductors, that have been either identified recently or perceived for many decades as conventional antiferromagnets.
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Submitted 21 August, 2023;
originally announced August 2023.
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Spatially resolved dielectric loss at the Si/SiO$_2$ interface
Authors:
Megan Cowie,
Taylor J. Z. Stock,
Procopios C. Constantinou,
Neil Curson,
Peter Grütter
Abstract:
The Si/SiO$_2$ interface is populated by isolated trap states which modify its electronic properties. These traps are of critical interest for the development of semiconductor-based quantum sensors and computers, as well as nanoelectronic devices. Here, we study the electric susceptibility of the Si/SiO$_2$ interface with nm spatial resolution using frequency-modulated atomic force microscopy to m…
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The Si/SiO$_2$ interface is populated by isolated trap states which modify its electronic properties. These traps are of critical interest for the development of semiconductor-based quantum sensors and computers, as well as nanoelectronic devices. Here, we study the electric susceptibility of the Si/SiO$_2$ interface with nm spatial resolution using frequency-modulated atomic force microscopy to measure a patterned dopant delta-layer buried 2 nm beneath the silicon native oxide interface. We show that surface charge organization timescales, which range from 1-150 ns, increase significantly around interfacial states. We conclude that dielectric loss under time-varying gate biases at MHz and sub-MHz frequencies in metal-insulator-semiconductor capacitor device architectures is highly spatially heterogeneous over nm length scales.
Supplemental GIFs can be found at https://doi.org/10.6084/m9.figshare.25546687
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Submitted 4 April, 2024; v1 submitted 23 June, 2023;
originally announced June 2023.
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Non-destructive X-ray imaging of patterned delta-layer devices in silicon
Authors:
Nicolò D'Anna,
Dario Ferreira Sanchez,
Guy Matmon,
Jamie Bragg,
Procopios C. Constantinou,
Taylor J. Z. Stock,
Sarah Fearn,
Steven R. Schofield,
Neil J. Curson,
Marek Bartkowiak,
Y. Soh,
Daniel Grolimund,
Simon Gerber,
Gabriel Aeppli
Abstract:
The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as phosphorous and arsenic. However, the ability to non-destructively obtain atomic-species-specific images of the final structure, which would be an indispensable tool for b…
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The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as phosphorous and arsenic. However, the ability to non-destructively obtain atomic-species-specific images of the final structure, which would be an indispensable tool for building more complex nano-scale devices, such as quantum co-processors, remains an unresolved challenge. Here we exploit X-ray fluorescence to create an element-specific image of As dopants in silicon, with dopant densities in absolute units and a resolution limited by the beam focal size (here $\sim1~μ$m), without affecting the device's low temperature electronic properties. The As densities provided by the X-ray data are compared to those derived from Hall effect measurements as well as the standard non-repeatable, scanning tunnelling microscopy and secondary ion mass spectroscopy, techniques. Before and after the X-ray experiments, we also measured the magneto-conductance, dominated by weak localisation, a quantum interference effect extremely sensitive to sample dimensions and disorder. Notwithstanding the $1.5\times10^{10}$ Sv ($1.5\times10^{16}$ Rad/cm$^{-2}$) exposure of the device to X-rays, all transport data were unchanged to within experimental errors, corresponding to upper bounds of 0.2 Angstroms for the radiation-induced motion of the typical As atom and 3$\%$ for the loss of activated, carrier-contributing dopants. With next generation synchrotron radiation sources and more advanced optics, we foresee that it will be possible to obtain X-ray images of single dopant atoms within resolved radii of 5 nm.
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Submitted 14 April, 2023; v1 submitted 19 August, 2022;
originally announced August 2022.
