Showing 1–4 of 4 results for author: Donegan, J

CMOS compatible multi-band plasmonic TE-pass polarizer

Authors: Nicolás Abadía, Md. Ghulam Saber, Frank Bello, Alireza Samani, Eslam El-Fiky, Yun Wang, John F. Donegan, David V. Plant

Abstract: A CMOS-compatible plasmonic TE-pass polarizer capable of working in the O, E, S, C, L, and U bands is numerically analyzed. The device is based on an integrated hybrid plasmonic waveguide (HPW) with a segmented metal design. The segmented metal will avoid the propagation of the TM mode, confined in the slot of the HPW, while the TE fundamental mode will pass. The TE mode is not affected by the met… ▽ More A CMOS-compatible plasmonic TE-pass polarizer capable of working in the O, E, S, C, L, and U bands is numerically analyzed. The device is based on an integrated hybrid plasmonic waveguide (HPW) with a segmented metal design. The segmented metal will avoid the propagation of the TM mode, confined in the slot of the HPW, while the TE fundamental mode will pass. The TE mode is not affected by the metal segmentation since it is confined in the core of the HPW. The concept of the segmented metal can be exploited in a plasmonic circuit with HPWs as the connecting waveguides between parts of the circuit and in a silicon photonics circuit with strip or slab waveguides connecting the different parts of the circuit. Using 3D FDTD simulations, it is shown that for a length of 5.5 μみゅーm the polarization extinction ratios are better than 20 dBでしべる and the insertion losses are less than 1.7 dBでしべる over all the optical communication bands. △ Less

Submitted 15 July, 2022; v1 submitted 27 April, 2022; originally announced April 2022.

Comments: 13 pages, 12 figures, and 5 tables. Published version: see https://doi.org/10.1364/OE.26.030292. Related works: see https://doi.org/10.1364/oe.22.011236, https://doi.org/10.1364/oe.25.010070, https://doi.org/10.1364/oe.26.001752, and https://doi.org/10.1063/5.0044490. Keywords: Integrated Optics; Integrated Optics Devices; Polarization-Selective Devices; Plasmonics; Components

Journal ref: Nicolás Abadía, Md. Ghulam Saber, Frank Bello, Alireza Samani, Eslam El-Fiky, Yun Wang, John F. Donegan, and David V. Plant, "CMOS-compatible multi-band plasmonic TE-pass polarizer," Opt. Express 26, 30292-30304 (2018)

Highly fabrication tolerant InP based polarization beam splitter based on p-i-n structure

Authors: Nicolás Abadía, Xiangyang Dai, Qiaoyin Lu, Wei-Hua Guo, David Patel, David V. Plant, John F. Donegan

Abstract: In this work, a novel highly fabrication tolerant polarization beam splitter (PBS) is presented on an InP platform. To achieve the splitting, we combine the Pockels effect and the plasma dispersion effect in a symmetric 1x2 Mach-Zehnder interferometer (MZI). One p-i-n phase shifter of the MZI is driven in forward bias to exploit the plasma dispersion effect and modify the phase of both the TE and… ▽ More In this work, a novel highly fabrication tolerant polarization beam splitter (PBS) is presented on an InP platform. To achieve the splitting, we combine the Pockels effect and the plasma dispersion effect in a symmetric 1x2 Mach-Zehnder interferometer (MZI). One p-i-n phase shifter of the MZI is driven in forward bias to exploit the plasma dispersion effect and modify the phase of both the TE and TM mode. The other arm of the MZI is driven in reverse bias to exploit the Pockels effect which affects only the TE mode. By adjusting the voltages of the two phase shifters, a different interference condition can be set for the TE and the TM modes thereby splitting them at the output of the MZI. By adjusting the voltages, the very tight fabrication tolerances known for fully passive PBS are eased. The experimental results show that an extinction ratio better than 15 dBでしべる and an on-chip loss of 3.5 dBでしべる over the full C-band (1530-1565nm) are achieved. △ Less

Submitted 19 July, 2022; v1 submitted 27 April, 2022; originally announced April 2022.

Comments: 8 pages, 7 figures, and 2 tables. Published version: see https://doi.org/10.1364/OE.25.010070. Related works: see https://doi.org/10.1364/OE.22.011236, https://doi.org/10.1364/oe.26.030292, and https://doi.org/10.1063/5.0044490. Keywords: Photonic Integrated Circuits; Integrated Optics Devices; Beam Splitters; Polarization-Selective Devices

Journal ref: Opt. Express 25, 10070-10077 (2017)

Spectroscopic size and thickness metrics for liquid-exfoliated h-BN

Authors: Aideen Griffin, Andrew Harvey, Brian Cunningham, Declan Scullion, Tian Tian, Chih-Jen Shih, Myrta Gruening, John Donegan, Elton J. G. Santos, Claudia Backes, Jonathan N. Coleman

Abstract: For many 2D materials, optical and Raman spectra are richly structured, and convey information on a range of parameters including nanosheet size and defect content. By contrast, the equivalent spectra for h-BN are relatively simple, with both the absorption and Raman spectra consisting of a single feature each, disclosing relatively little information. Here, the ability to size-select liquid-exfol… ▽ More For many 2D materials, optical and Raman spectra are richly structured, and convey information on a range of parameters including nanosheet size and defect content. By contrast, the equivalent spectra for h-BN are relatively simple, with both the absorption and Raman spectra consisting of a single feature each, disclosing relatively little information. Here, the ability to size-select liquid-exfoliated h-BN nanosheets has allowed us to comprehensively study the dependence of h-BN optical spectra on nanosheet dimensions. We find the optical extinction coefficient spectrum to vary systematically with nanosheet lateral size due to the presence of light scattering. Conversely, once light scattering has been decoupled to give the optical absorbance spectra, we find the size dependence to be mostly removed save for a weak but well-defined variation in energy of peak absorbance with nanosheet thickness. This finding is corroborated by our ab initio GW and Bethe-Salpeter equation calculations, which include electron correlations and quasiparticle self-consistency (QSGW). In addition, while we find the position of the sole h-BN Raman line to be invariant with nanosheet dimensions, the linewidth appears to vary weakly with nanosheet thickness. These size-dependent spectroscopic properties can be used as metrics to estimate nanosheet thickness from spectroscopic data. △ Less

Submitted 6 March, 2018; originally announced March 2018.

Comments: Accepted in Chemistry Materials (In press)

Raman Characterization of Platinum Diselenide Thin Films

Authors: Maria O'Brien, Niall McEvoy, Carlo Motta, Jian-Yao Zheng, Nina C. Berner, Jani Kotakoski, Kenan Elibol, Timothy J. Pennycook, Jannik C. Meyer, Chanyoung Yim, Mohamed Abid, Toby Hallam, John F. Donegan, Stefano Sanvito, Georg S. Duesberg

Abstract: Platinum diselenide (PtSe2) is a newly discovered 2D material which is of great interest for applications in electronics and catalysis. PtSe2 films were synthesized by thermally-assisted selenization of predeposited platinum films and scanning transmission electron microscopy revealed the crystal structure of these films to be 1T. Raman scattering of these films was studied as a function of film t… ▽ More Platinum diselenide (PtSe2) is a newly discovered 2D material which is of great interest for applications in electronics and catalysis. PtSe2 films were synthesized by thermally-assisted selenization of predeposited platinum films and scanning transmission electron microscopy revealed the crystal structure of these films to be 1T. Raman scattering of these films was studied as a function of film thickness, laser wavelength and laser polarization. Eg and A1g Raman active modes were identified using polarization measurements in the Raman setup. These modes were found to display a clear position and intensity dependence with film thickness, for multiple excitation wavelengths, and their peak positions agree with simulated phonon dispersion curves for PtSe2. These results highlight the practicality of using Raman spectroscopy as a prime characterization technique for newly-synthesized 2D materials. △ Less

Submitted 31 December, 2015; originally announced December 2015.