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High Mobility Free-Standing InSb Nanoflags Grown On InP Nanowire Stems For Quantum Devices
Authors:
Isha Verma,
Sedighe Salimian,
Valentina Zannier,
Stefan Heun,
Francesca Rossi,
Daniele Ercolani,
Fabio Beltram,
Lucia Sorba
Abstract:
High quality heteroepitaxial two-dimensional (2D) InSb layers are very difficult to realize owing to the large lattice mismatch with other widespread semiconductor substrates. A way around this problem is to grow free-standing 2D InSb nanostructures on nanowire (NW) stems, thanks to the capability of NWs to efficiently relax elastic strain along the sidewalls when lattice-mismatched semiconductor…
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High quality heteroepitaxial two-dimensional (2D) InSb layers are very difficult to realize owing to the large lattice mismatch with other widespread semiconductor substrates. A way around this problem is to grow free-standing 2D InSb nanostructures on nanowire (NW) stems, thanks to the capability of NWs to efficiently relax elastic strain along the sidewalls when lattice-mismatched semiconductor systems are integrated. In this work, we optimize the morphology of free-standing 2D InSb nanoflags (NFs). In particular, robust NW stems, optimized growth parameters, and the use of reflection high-energy electron diffraction (RHEED), to precisely orient the substrate for preferential growth, are implemented to increase the lateral size of the 2D InSb NFs. Transmission electron microscopy (TEM) analysis of these NFs reveals defect-free zinc blend crystal structure, stoichiometric composition, and relaxed lattice parameters. The resulting NFs are large enough to fabricate Hall-bar contacts with suitable length-to-width ratio enabling precise electrical characterization. An electron mobility of ~29,500 cm2/Vs is measured, which is the highest value reported for free-standing 2D InSb nanostrutures in literature. We envision the use of 2D InSb NFs for fabrication of advanced quantum devices.
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Submitted 4 November, 2021;
originally announced November 2021.
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Growth and Strain Relaxation Mechanisms of InAs/InP/GaAsSb Core-Dual-Shell Nanowires
Authors:
Omer Arif,
Valentina Zannier,
Ang Li,
Francesca Rossi,
Daniele Ercolani,
Fabio Beltram,
Lucia Sorba
Abstract:
The combination of core/shell geometry and band gap engineering in nanowire heterostructures can be employed to realize systems with novel transport and optical properties. Here, we report on the growth of InAs/InP/GaAsSb core-dual-shell nanowires by catalyst-free chemical beam epitaxy on Si(111) substrates. Detailed morphological, structural, and compositional analyses of the nanowires as a funct…
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The combination of core/shell geometry and band gap engineering in nanowire heterostructures can be employed to realize systems with novel transport and optical properties. Here, we report on the growth of InAs/InP/GaAsSb core-dual-shell nanowires by catalyst-free chemical beam epitaxy on Si(111) substrates. Detailed morphological, structural, and compositional analyses of the nanowires as a function of growth parameters were carried out by scanning and transmission electron microscopy and by energy-dispersive X-ray spectroscopy. Furthermore, by combining the scanning transmission electron microscopy-Moire technique with geometric phase analysis, we studied the residual strain and the relaxation mechanisms in this system. We found that InP shell facets are well-developed along all the crystallographic directions only when the nominal thickness is above 1 nm, suggesting an island-growth mode. Moreover, the crystallographic analysis indicates that both InP and GaAsSb shells grow almost coherently to the InAs core along the 112 direction and elastically compressed along the 110 direction. For InP shell thickness above 8 nm, some dislocations and roughening occur at the interfaces. This study provides useful general guidelines for the fabrication of high-quality devices based on these core-dual-shell nanowires.
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Submitted 3 February, 2021;
originally announced February 2021.
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Orbital Tuning of Tunnel Coupling in InAs/InP Nanowire Quantum Dots
Authors:
Zahra Sadre Momtaz,
Stefano Servino,
Valeria Demontis,
Valentina Zannier,
Daniele Ercolani,
Francesca Rossi,
Francesco Rossella,
Lucia Sorba,
Fabio Beltram,
Stefano Roddaro
Abstract:
We report results on the control of barrier transparency in InAs/InP nanowire quantum dots via the electrostatic control of the device electron states. Recent works demonstrated that barrier transparency in this class of devices displays a general trend just depending on the total orbital energy of the trapped electrons. We show that a qualitatively different regime is observed at relatively low f…
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We report results on the control of barrier transparency in InAs/InP nanowire quantum dots via the electrostatic control of the device electron states. Recent works demonstrated that barrier transparency in this class of devices displays a general trend just depending on the total orbital energy of the trapped electrons. We show that a qualitatively different regime is observed at relatively low filling numbers, where tunneling rates are rather controlled by the axial configuration of the electron orbital. Transmission rates versus filling are further modified by acting on the radial configuration of the orbitals by means of electrostatic gating, and the barrier transparency for the various orbitals is found to evolve as expected from numerical simulations. The possibility to exploit this mechanism to achieve a controlled continuous tuning of the tunneling rate of an individual Coulomb blockade resonance is discussed.
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Submitted 1 February, 2020; v1 submitted 22 November, 2019;
originally announced November 2019.
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Thermoelectric conversion at 30K in InAs/InP nanowire quantum dots
Authors:
Domenic Prete,
Paolo Andrea Erdman,
Valeria Demontis,
Valentina Zannier,
Daniele Ercolani,
Lucia Sorba,
Fabio Beltram,
Francesco Rossella,
Fabio Taddei,
Stefano Roddaro
Abstract:
We demonstrate high-temperature thermoelectric conversion in InAs/InP nanowire quantum dots by taking advantage of their strong electronic confinement. The electrical conductance G and the thermopower S are obtained from charge transport measurements and accurately reproduced with a theoretical model accounting for the multi-level structure of the quantum dot. Notably, our analysis does not rely o…
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We demonstrate high-temperature thermoelectric conversion in InAs/InP nanowire quantum dots by taking advantage of their strong electronic confinement. The electrical conductance G and the thermopower S are obtained from charge transport measurements and accurately reproduced with a theoretical model accounting for the multi-level structure of the quantum dot. Notably, our analysis does not rely on the estimate of co-tunnelling contributions since electronic thermal transport is dominated by multi-level heat transport. By taking into account two spin-degenerate energy levels we are able to evaluate the electronic thermal conductance K and investigate the evolution of the electronic figure of merit ZT as a function of the quantum dot configuration and demonstrate ZT ~ 35 at 30 K, corresponding to an electronic effciency at maximum power close to the Curzon- Ahlborn limit.
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Submitted 16 March, 2019;
originally announced March 2019.
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Ionic liquid gating of InAs nanowire-based field effect transistors
Authors:
Johanna Lieb,
Valeria Demontis,
Daniele Ercolani,
Valentina Zannier,
Lucia Sorba,
Shimpei Ono,
Fabio Beltram,
Benjamin Sacépé,
Francesco Rossella
Abstract:
We report the operation of a field-effect transistor based on a single InAs nanowire gated by an ionic liquid. Liquid gating yields very efficient carrier modulation with a transconductance value thirty time larger than standard back gating with the SiO2 /Si++ substrate. Thanks to this wide modulation we show the controlled evolution from semiconductor to metallic-like behavior in the nanowire. Th…
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We report the operation of a field-effect transistor based on a single InAs nanowire gated by an ionic liquid. Liquid gating yields very efficient carrier modulation with a transconductance value thirty time larger than standard back gating with the SiO2 /Si++ substrate. Thanks to this wide modulation we show the controlled evolution from semiconductor to metallic-like behavior in the nanowire. This work provides the first systematic study of ionic-liquid gating in electronic devices based on individual III-V semiconductor nanowires: we argue this architecture opens the way to a wide range of fundamental and applied studies from the phase-transitions to bioelectronics.
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Submitted 23 October, 2018; v1 submitted 22 October, 2018;
originally announced October 2018.
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Gate-tunable spatial modulation of localized plasmon resonances
Authors:
Andrea Arcangeli,
Francesco Rossella,
Andrea Tomadin,
Jihua Xu,
Daniele Ercolani,
Lucia Sorba,
Fabio Beltram,
Alessandro Tredicucci,
Marco Polini,
Stefano Roddaro
Abstract:
Nanoplasmonics exploits the coupling between light and collective electron density oscillations (plasmons) to bypass the stringent limits imposed by diffraction. This coupling enables confinement of light to sub-wavelength volumes and is usually exploited in nanostructured metals. Substantial efforts are being made at the current frontier of the field to employ electron systems in semiconducting a…
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Nanoplasmonics exploits the coupling between light and collective electron density oscillations (plasmons) to bypass the stringent limits imposed by diffraction. This coupling enables confinement of light to sub-wavelength volumes and is usually exploited in nanostructured metals. Substantial efforts are being made at the current frontier of the field to employ electron systems in semiconducting and semimetallic materials since these add the exciting possibility of realizing electrically tunable and/or active nanoplasmonic devices. Here we demonstrate that a suitable design of the doping profile in a semiconductor nanowire (NW) can be used to tailor the plasmonic response and induce localization effects akin to those observed in metal nanoparticles. Moreover, by field-effect carrier modulation, we demonstrate that these localized plasmon resonances can be spatially displaced along the nanostructure body, thereby paving the way for the implementation of spatially tunable plasmonic circuits.
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Submitted 4 May, 2018;
originally announced May 2018.
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Supercurrent through a spin-split quasi-ballistic point contact in an InAs nanowire
Authors:
J. C. Estrada Saldaña,
R. Žitko,
J. P. Cleuziou,
E. J. H. Lee,
V. Zannier,
D. Ercolani,
L. Sorba,
R. Aguado,
S. De Franceschi
Abstract:
We study the superconducting proximity effect in an InAs nanowire contacted by Ta-based superconducting electrodes. Using local bottom gates, we control the potential landscape along the nanowire, tuning its conductance to a quasi-ballistic regime. At high magnetic field ($B$), we observe approximately quantized conductance plateaus associated with the first two spin-polarized one-dimensional mode…
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We study the superconducting proximity effect in an InAs nanowire contacted by Ta-based superconducting electrodes. Using local bottom gates, we control the potential landscape along the nanowire, tuning its conductance to a quasi-ballistic regime. At high magnetic field ($B$), we observe approximately quantized conductance plateaus associated with the first two spin-polarized one-dimensional modes. For $B < 1$ T, the onset of superconductivity occurs in concomitance with the development of sizeable charge localization leading to a 0.7-type conductance anomaly. In this regime, the proximity supercurrent exhibits an unusual, non-monotonic $B$ dependence. We interpret this finding in terms of a competition between the Kondo effect, dominating near $B=0$, and the Zeeman effect, enforcing spin polarization and the emergence of a $π$ phase shift in the Josephson relation at higher $B$.
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Submitted 5 January, 2018;
originally announced January 2018.
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Heterogeneous nucleation of catalyst-free InAs nanowires on silicon
Authors:
U. P. Gomes,
D. Ercolani,
V. Zannier,
S. Battiato,
E. Ubyivovk,
V. Mikhailovskii,
Y. Murata,
S. Heun,
F. Beltram,
L. Sorba
Abstract:
We report on the heterogeneous nucleation of catalyst-free InAs nanowires on Si (111) substrates by chemical beam epitaxy. We show that nanowire nucleation is enhanced by sputtering the silicon substrate with energetic particles. We argue that particle bombardment introduces lattice defects on the silicon surface that serve as preferential nucleation sites. The formation of these nucleation sites…
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We report on the heterogeneous nucleation of catalyst-free InAs nanowires on Si (111) substrates by chemical beam epitaxy. We show that nanowire nucleation is enhanced by sputtering the silicon substrate with energetic particles. We argue that particle bombardment introduces lattice defects on the silicon surface that serve as preferential nucleation sites. The formation of these nucleation sites can be controlled by the sputtering parameters, allowing the control of nanowire density in a wide range. Nanowire nucleation is accompanied by unwanted parasitic islands, but by careful choice of annealing and growth temperature allows to strongly reduce the relative density of these islands and to realize samples with high nanowire yield.
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Submitted 18 January, 2017;
originally announced January 2017.
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InAs nanowire superconducting tunnel junctions: spectroscopy, thermometry and nanorefrigeration
Authors:
Jaakko Mastomäki,
Stefano Roddaro,
Mirko Rocci,
Valentina Zannier,
Daniele Ercolani,
Lucia Sorba,
Ilari J. Maasilta,
Nadia Ligato,
Antonio Fornieri,
Elia Strambini,
Francesco Giazotto
Abstract:
We demonstrate an original method -- based on controlled oxidation -- to create high-quality tunnel junctions between superconducting Al reservoirs and InAs semiconductor nanowires. We show clean tunnel characteristics with a current suppression by over $4$ orders of magnitude for a junction bias well below the Al gap $Δ_0 \approx 200\,μ{\rm eV}$. The experimental data are in close agreement with…
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We demonstrate an original method -- based on controlled oxidation -- to create high-quality tunnel junctions between superconducting Al reservoirs and InAs semiconductor nanowires. We show clean tunnel characteristics with a current suppression by over $4$ orders of magnitude for a junction bias well below the Al gap $Δ_0 \approx 200\,μ{\rm eV}$. The experimental data are in close agreement with the BCS theoretical expectations of a superconducting tunnel junction. The studied devices combine small-scale tunnel contacts working as thermometers as well as larger electrodes that provide a proof-of-principle active {\em cooling} of the electron distribution in the nanowire. A peak refrigeration of about $δT = 10\,{\rm mK}$ is achieved at a bath temperature $T_{bath}\approx250-350\,{\rm mK}$ in our prototype devices. This method opens important perspectives for the investigation of thermoelectric effects in semiconductor nanostructures and for nanoscale refrigeration.
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Submitted 8 November, 2016;
originally announced November 2016.
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Local noise in a diffusive conductor
Authors:
E. S. Tikhonov,
D. V. Shovkun,
D. Ercolani,
F. Rossella,
M. Rocci,
L. Sorba,
S. Roddaro,
V. S. Khrapai
Abstract:
The control and measurement of local non-equilibrium configurations is of utmost importance in applications on energy harvesting, thermoelectrics and heat management in nano-electronics. This challenging task can be achieved with the help of various local probes, prominent examples including superconducting or quantum dot based tunnel junctions, classical and quantum resistors, and Raman thermogra…
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The control and measurement of local non-equilibrium configurations is of utmost importance in applications on energy harvesting, thermoelectrics and heat management in nano-electronics. This challenging task can be achieved with the help of various local probes, prominent examples including superconducting or quantum dot based tunnel junctions, classical and quantum resistors, and Raman thermography. Beyond time-averaged properties, valuable information can also be gained from spontaneous fluctuations of current (noise). From these perspective, however, a fundamental constraint is set by current conservation, which makes noise a characteristic of the whole conductor, rather than some part of it. Here we demonstrate how to remove this obstacle and pick up a local noise temperature of a current biased diffusive conductor with the help of a miniature noise probe. This approach is virtually noninvasive and extends primary local measurements towards strongly non-equilibrium regimes.
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Submitted 15 July, 2016; v1 submitted 25 April, 2016;
originally announced April 2016.
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Ultrafast single-nanowire multi-terahertz spectroscopy with sub-cycle temporal resolution
Authors:
M. Eisele,
T. L. Cocker,
M. A. Huber,
M. Plankl,
L. Viti,
D. Ercolani,
L. Sorba,
M. S. Vitiello,
R. Huber
Abstract:
Phase-locked ultrashort pulses in the rich terahertz (THz) spectral range have provided key insights into phenomena as diverse as quantum confinement, first-order phase transitions, high-temperature superconductivity, and carrier transport in nanomaterials. Ultrabroadband electro-optic sampling of few-cycle field transients can even reveal novel dynamics that occur faster than a single oscillation…
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Phase-locked ultrashort pulses in the rich terahertz (THz) spectral range have provided key insights into phenomena as diverse as quantum confinement, first-order phase transitions, high-temperature superconductivity, and carrier transport in nanomaterials. Ultrabroadband electro-optic sampling of few-cycle field transients can even reveal novel dynamics that occur faster than a single oscillation cycle of light. However, conventional THz spectroscopy is intrinsically restricted to ensemble measurements by the diffraction limit. As a result, it measures dielectric functions averaged over the size, structure, orientation and density of nanoparticles, nanocrystals or nanodomains. Here, we extend ultrabroadband time-resolved THz spectroscopy (20 - 50 THz) to the sub-nanoparticle scale (10 nm) by combining sub-cycle, field-resolved detection (10 fs) with scattering-type near-field scanning optical microscopy (s-NSOM). We trace the time-dependent dielectric function at the surface of a single photoexcited InAs nanowire in all three spatial dimensions and reveal the ultrafast ($<$50 fs) formation of a local carrier depletion layer.
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Submitted 14 April, 2016;
originally announced April 2016.
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Suspended InAs nanowire Josephson junctions assembled via dielectrophoresis
Authors:
Domenico Montemurro,
Daniela Stornaiuolo,
Davide Massarotti,
Daniele Ercolani,
Lucia Sorba,
Fabio Beltram,
Francesco Tafuri,
Stefano Roddaro
Abstract:
We present a novel technique for the realization of suspended Josephson junctions based on InAs semiconductor nanowires. The devices are assembled using a technique of drop-casting guided by dielectrophoresis that allows to finely align the nanostructures on top of the electrodes. The proposed architecture removes the interaction between the nanowire and the substrate which is known to influence d…
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We present a novel technique for the realization of suspended Josephson junctions based on InAs semiconductor nanowires. The devices are assembled using a technique of drop-casting guided by dielectrophoresis that allows to finely align the nanostructures on top of the electrodes. The proposed architecture removes the interaction between the nanowire and the substrate which is known to influence disorder and the orientation of the Rashba vector. The relevance of this approach in view of the implementation of Josephson junctions based on High-Temperature Superconductors is discussed.
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Submitted 12 April, 2016;
originally announced April 2016.
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Noise thermometry applied to thermoelectric measurements in InAs nanowires
Authors:
E. S. Tikhonov,
D. V. Shovkun,
V. S. Khrapai,
D. Ercolani,
F. Rossella,
M. Rocci,
L. Sorba,
S. Roddaro
Abstract:
We apply noise thermometry to characterize charge and thermoelectric transport in single InAs nanowires (NWs) at a bath temperature of 4.2 K. Shot noise measurements identify elastic diffusive transport in our NWs with negligible electron-phonon interaction. This enables us to set up a measurement of the diffusion thermopower. Unlike in previous approaches, we make use of a primary electronic nois…
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We apply noise thermometry to characterize charge and thermoelectric transport in single InAs nanowires (NWs) at a bath temperature of 4.2 K. Shot noise measurements identify elastic diffusive transport in our NWs with negligible electron-phonon interaction. This enables us to set up a measurement of the diffusion thermopower. Unlike in previous approaches, we make use of a primary electronic noise thermometry to calibrate a thermal bias across the NW. In particular, this enables us to apply a contact heating scheme, which is much more efficient in creating the thermal bias as compared to conventional substrate heating. The measured thermoelectric Seebeck coefficient exhibits strong mesoscopic fluctuations in dependence on the back-gate voltage that is used to tune the NW carrier density. We analyze the transport and thermoelectric data in terms of approximate Mott's thermopower relation and to evaluate a gate-voltage to Fermi energy conversion factor.
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Submitted 29 February, 2016;
originally announced February 2016.
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Magnetically-driven colossal supercurrent enhancement in InAs nanowire Josephson junctions
Authors:
J. Paajaste,
E. Strambini,
M. Amado,
S. Roddaro,
P. San-Jose,
R. Aguado,
F. S. Bergeret,
D. Ercolani,
L. Sorba,
F. Giazotto
Abstract:
The Josephson effect is a fundamental quantum phenomenon consisting in the appearance of a dissipationless supercurrent in a weak link between two superconducting (S) electrodes. While the mechanism leading to the Josephson effect is quite general, i.e., Andreev reflections at the interface between the S electrodes and the weak link, the precise physical details and topology of the junction drasti…
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The Josephson effect is a fundamental quantum phenomenon consisting in the appearance of a dissipationless supercurrent in a weak link between two superconducting (S) electrodes. While the mechanism leading to the Josephson effect is quite general, i.e., Andreev reflections at the interface between the S electrodes and the weak link, the precise physical details and topology of the junction drastically modify the properties of the supercurrent. Specifically, a strong enhancement of the critical supercurrent $I_C$ is expected to occur when the topology of the junction allows the emergence of Majorana bound states. Here we report charge transport measurements in mesoscopic Josephson junctions formed by InAs nanowires and Ti/Al superconducting leads. Our main observation is a colossal enhancement of the critical supercurrent induced by an external magnetic field applied perpendicular to the substrate. This striking and anomalous supercurrent enhancement cannot be ascribed to any known conventional phenomenon existing in Josephson junctions including, for instance, Fraunhofer-like diffraction or a $π$-state behavior. We also investigate an unconventional model related to inhomogenous Zeeman field caused by magnetic focusing, and note that it can not account for the observed behaviour. Finally, we consider these results in the context of topological superconductivity, and show that the observed $I_C$ enhancement is compatible with a magnetic field-induced topological transition of the junction.
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Submitted 12 January, 2016;
originally announced January 2016.
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Nanoscale spin rectifiers controlled by the Stark effect
Authors:
Francesco Rossella,
Andrea Bertoni,
Daniele Ercolani,
Massimo Rontani,
Lucia Sorba,
Fabio Beltram,
Stefano Roddaro
Abstract:
The control of orbital and spin state of single electrons is a key ingredient for quantum information processing, novel detection schemes, and, more generally, is of much relevance for spintronics. Coulomb and spin blockade (SB) in double quantum dots (DQDs) enable advanced single-spin operations that would be available even for room-temperature applications for sufficiently small devices. To date…
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The control of orbital and spin state of single electrons is a key ingredient for quantum information processing, novel detection schemes, and, more generally, is of much relevance for spintronics. Coulomb and spin blockade (SB) in double quantum dots (DQDs) enable advanced single-spin operations that would be available even for room-temperature applications for sufficiently small devices. To date, however, spin operations in DQDs were observed at sub-Kelvin temperatures, a key reason being that scaling a DQD system while retaining an independent field-effect control on the individual dots is very challenging. Here we show that quantum-confined Stark effect allows an independent addressing of two dots only 5 nm apart with no need for aligned nanometer-size local gating. We thus demonstrate a scalable method to fully control a DQD device, regardless of its physical size. In the present implementation we show InAs/InP nanowire (NW) DQDs that display an experimentally detectable SB up to 10 K. We also report and discuss an unexpected re-entrant SB lifting as a function magnetic-field intensity.
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Submitted 9 December, 2015;
originally announced December 2015.
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Mapping of Axial Strain in InAs/InSb Heterostructured Nanowires
Authors:
Atanu Patra,
Jaya Kumar Panda,
Anushree Roy,
Mauro Gemmi,
Jérémy David,
Daniele Ercolani,
Lucia Sorba
Abstract:
The article presents a mapping of the residual strain along the axis of InAs/InSb heterostructured nanowires. Using confocal Raman measurements, we observe a gradual shift in the TO phonon mode along the axis of these nanowires. We attribute the observed TO phonon shift to a residual strain arising from the InAs/InSb lattice mismatch. We find that the strain is maximum at the interface and then mo…
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The article presents a mapping of the residual strain along the axis of InAs/InSb heterostructured nanowires. Using confocal Raman measurements, we observe a gradual shift in the TO phonon mode along the axis of these nanowires. We attribute the observed TO phonon shift to a residual strain arising from the InAs/InSb lattice mismatch. We find that the strain is maximum at the interface and then monotonically relaxes towards the tip of the nanowires. We also analyze the crystal structure of the InSb segment through selected area electron diffraction measurements and electron diffraction tomography on individual nanowires.
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Submitted 1 June, 2015;
originally announced June 2015.
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Strain induced band alignment in wurtzite-zincblende InAs heterostructured nanowires
Authors:
Jaya Kumar Panda,
Arup Chakraborty,
Indra Dasgupta,
Elena Hasanu,
Daniele Ercolani,
Mauro Gemmi,
Lucia Sorba,
Anushree Roy
Abstract:
We study band alignment in wurtzite-zincblende polytype InAs heterostructured nanowires using temperature dependent resonance Raman measurements. Nanowires having two different wurtzite fractions are investigated. Using visible excitation wavelengths in resonance Raman measurements, we probe the electronic band alignment of these semiconductor nanowires near a high symmetry point of the Brillouin…
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We study band alignment in wurtzite-zincblende polytype InAs heterostructured nanowires using temperature dependent resonance Raman measurements. Nanowires having two different wurtzite fractions are investigated. Using visible excitation wavelengths in resonance Raman measurements, we probe the electronic band alignment of these semiconductor nanowires near a high symmetry point of the Brillouin zone (E$_{1}$ gap). The strain in the crystal structure, as revealed from the shift of the phonon mode, explains the observed band alignment at the wurtzite-zincblende interface. Our experimental results are further supported by electronic structure calculations for such periodic heterostructured interface.
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Submitted 20 May, 2015;
originally announced May 2015.
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Pb/InAs nanowire Josephson junction with high critical current and magnetic flux focusing
Authors:
J. Paajaste,
M. Amado,
S. Roddaro,
F. S. Bergeret,
D. Ercolani,
L. Sorba,
F. Giazotto
Abstract:
We have studied mesoscopic Josephson junctions formed by highly $n$-doped InAs nanowires and superconducting Ti/Pb source and drain leads. The current-voltage properties of the system are investigated by varying temperature and external out-of-plane magnetic field. Superconductivity in the Pb electrodes persists up to $ \sim 7$ K and with magnetic field values up to 0.4 T. Josephson coupling at ze…
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We have studied mesoscopic Josephson junctions formed by highly $n$-doped InAs nanowires and superconducting Ti/Pb source and drain leads. The current-voltage properties of the system are investigated by varying temperature and external out-of-plane magnetic field. Superconductivity in the Pb electrodes persists up to $ \sim 7$ K and with magnetic field values up to 0.4 T. Josephson coupling at zero backgate voltage is observed up to 4.5 K and the critical current is measured to be as high as 615 nA. The supercurrent suppression as a function of the magnetic field reveals a diffraction pattern that is explained by a strong magnetic flux focusing provided by the superconducting electrodes forming the junction.
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Submitted 25 March, 2015; v1 submitted 4 November, 2014;
originally announced November 2014.
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Raman scattering study of InAs nanowire under high pressure
Authors:
Dipanwita Majumdar,
Abhisek Basu,
Goutam Dev Mukherjee,
Daniele Ercolani,
Lucia Sorba,
Achintya Singha
Abstract:
The pressure dependent phonon modes of predominant wurtzite InAs nanowires has been investigated in a diamond anvil cell under hydrostatic pressure up to 58 GPa. The TO and LO at Gamma point and other optical phonon frequencies increase linearly while the LO TO splitting decreases with pressure. The recorded Raman modes have been used to determine the mode Gruneisen parameters and also the value o…
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The pressure dependent phonon modes of predominant wurtzite InAs nanowires has been investigated in a diamond anvil cell under hydrostatic pressure up to 58 GPa. The TO and LO at Gamma point and other optical phonon frequencies increase linearly while the LO TO splitting decreases with pressure. The recorded Raman modes have been used to determine the mode Gruneisen parameters and also the value of Borns transverse effective charge. The calculated Borns transverse effective charge exhibits a linear reduction with increasing pressure implying an increase in covalency of nanowires under compression. The intensity of the Raman modes shows a strong enhancement as the energy of E1 band gap approaches the excitation energy, which has been discussed in terms of resonant Raman scattering. An indication of structural phase transformation has been observed above pressure 10.87 GPa. We propose this transformation may be from wurtzite to rock salt phase although further experimental and theoretical confirmations are needed.
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Submitted 10 January, 2014;
originally announced January 2014.
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Large thermal biasing of individual gated nanostructures
Authors:
Stefano Roddaro,
Daniele Ercolani,
Mian Akif Safeen,
Francesco Rossella,
Vincenzo Piazza,
Francesco Giazotto,
Lucia Sorba,
Fabio Beltram
Abstract:
We demonstrate a novel nanoheating scheme that yields very large and uniform temperature gradients up to about 1K every 100nm, in an architecture which is compatible with the field-effect control of the nanostructure under test. The temperature gradients demonstrated largely exceed those typically obtainable with standard resistive heaters fabricated on top of the oxide layer. The nanoheating plat…
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We demonstrate a novel nanoheating scheme that yields very large and uniform temperature gradients up to about 1K every 100nm, in an architecture which is compatible with the field-effect control of the nanostructure under test. The temperature gradients demonstrated largely exceed those typically obtainable with standard resistive heaters fabricated on top of the oxide layer. The nanoheating platform is demonstrated in the specific case of a short-nanowire device.
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Submitted 8 January, 2014; v1 submitted 10 December, 2013;
originally announced December 2013.
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Giant thermovoltage in single InAs-nanowire field-effect transistors
Authors:
Stefano Roddaro,
Daniele Ercolani,
Mian Akif Safeen,
Soile Suomalainen,
Francesco Rossella,
Francesco Giazotto,
Lucia Sorba,
Fabio Beltram
Abstract:
Millivolt range thermovoltage is demonstrated in single InAs-nanowire based field effect transistors. Thanks to a buried heating scheme, we drive both a large thermal bias DT>10K and a strong field-effect modulation of electric conductance on the nanostructures. This allows the precise mapping of the evolution of the Seebeck coefficient S as a function of the gate-controlled conductivity between r…
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Millivolt range thermovoltage is demonstrated in single InAs-nanowire based field effect transistors. Thanks to a buried heating scheme, we drive both a large thermal bias DT>10K and a strong field-effect modulation of electric conductance on the nanostructures. This allows the precise mapping of the evolution of the Seebeck coefficient S as a function of the gate-controlled conductivity between room temperature and 100K$. Based on these experimental data a novel estimate of the electron mobility is given. This value is compared with the result of standard field-effect based mobility estimates and discussed in relation to the effect of charge traps in the devices.
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Submitted 10 December, 2013;
originally announced December 2013.
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Electronic Band Structure of Wurtzite GaP Nanowires via Resonance Raman Spectroscopy
Authors:
Jaya Kumar Panda,
Anushree Roy,
Mauro Gemmi,
Elena Husanu,
Ang Li,
Daniele Ercolani,
Lucia Sorba
Abstract:
Raman measurements are performed on defect-free wurzite GaP nanowires. Resonance Raman measurements are carried out over the excitation energy range between 2.19 and 2.71 eV. Resonances at 2.38 eV and 2.67 eV of the E1(LO) mode and at 2.67 eV of the A1(LO) are observed. The presence of these intensity resonances clearly demonstrates the existence of energy states with Gamma_9hh and Gamma_7V (Gamma…
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Raman measurements are performed on defect-free wurzite GaP nanowires. Resonance Raman measurements are carried out over the excitation energy range between 2.19 and 2.71 eV. Resonances at 2.38 eV and 2.67 eV of the E1(LO) mode and at 2.67 eV of the A1(LO) are observed. The presence of these intensity resonances clearly demonstrates the existence of energy states with Gamma_9hh and Gamma_7V (Gamma_7C) symmetries of the valence (conduction) band and allows to measure WZ phase GaP band energies at the Gamma point. In addition, we have investigated temperature dependent resonant Raman measurements, which allowed us to extrapolate the zero temperature values of Gamma point energies, along with the crystal field and spin-orbit splitting energies. Above results provide a feedback for refining available theoretical calculations to derive the correct wurtzite III-V semiconductor band structure.
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Submitted 28 March, 2013;
originally announced March 2013.
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Internal field induced enhancement and effect of resonance in Raman scattering of InAs nanowires
Authors:
Jaya Kumar Panda,
Anushree Roy,
Achintya Singha,
Mauro Gemmi,
Daniele Ercolani,
Vittorio Pellegrini,
Lucia Sorba
Abstract:
An internal field induced resonant intensity enhancement of Raman scattering of phonon excitations in InAs nanowires is reported. The experimental observation is in good agreement with the simulated results for the scattering of light under varying incident wavelengths, originating from the enhanced internal electric field in an infinite dielectric cylinder. Our analysis demonstrates the combined…
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An internal field induced resonant intensity enhancement of Raman scattering of phonon excitations in InAs nanowires is reported. The experimental observation is in good agreement with the simulated results for the scattering of light under varying incident wavelengths, originating from the enhanced internal electric field in an infinite dielectric cylinder. Our analysis demonstrates the combined effect of the first higher lying direct band gap energy (E1) and the refractive index of the InAs nanowires in the internal field induced resonant Raman scattering. Furthermore, the difference in the relative contribution of electro-optic effect and deformation potential in Raman scattering of nanowires and bulk InAs over a range of excitation energies is discussed by comparing the intensity ratio of their LO and TO phonon modes.
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Submitted 22 May, 2012;
originally announced May 2012.
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Raman sensitivity to crystal structure in InAs nanowires
Authors:
Jaya Kumar Panda,
Anushree Roy,
Achintya Singha,
Mauro Gemmi,
Daniele Ercolani,
Vittorio Pellegrini,
Lucia Sorba
Abstract:
We report a combined electron transmission and Raman spectroscopy study of InAs nanowires. We demonstrate that the temperature dependent behavior of optical phonon energies can be used to determine the relative wurtzite fraction in the InAs nanowires. Furthermore, we propose that the interfacial strain between zincblende and wurtzite phases along the length of the wires manifests in the temperatur…
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We report a combined electron transmission and Raman spectroscopy study of InAs nanowires. We demonstrate that the temperature dependent behavior of optical phonon energies can be used to determine the relative wurtzite fraction in the InAs nanowires. Furthermore, we propose that the interfacial strain between zincblende and wurtzite phases along the length of the wires manifests in the temperature-evolution of the phonon linewidths. From these studies, temperature-dependent Raman measurements emerge has a non-invasive method to study polytypism in such nanowires.
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Submitted 24 December, 2011;
originally announced December 2011.
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Manipulation of electron orbitals in hard-wall InAs/InP nanowire quantum dots
Authors:
Stefano Roddaro,
Andrea Pescaglini,
Daniele Ercolani,
Lucia Sorba,
Fabio Beltram
Abstract:
We present a novel technique for the manipulation of the energy spectrum of hard-wall InAs/InP nanowire quantum dots. By using two local gate electrodes, we induce a strong electric dipole moment on the dot and demonstrate the controlled modification of its electronic orbitals. Our approach allows us to dramatically enhance the single-particle energy spacing between the first two quantum levels in…
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We present a novel technique for the manipulation of the energy spectrum of hard-wall InAs/InP nanowire quantum dots. By using two local gate electrodes, we induce a strong electric dipole moment on the dot and demonstrate the controlled modification of its electronic orbitals. Our approach allows us to dramatically enhance the single-particle energy spacing between the first two quantum levels in the dot and thus to increment the working temperature of our InAs/InP single-electron transistors. Our devices display a very robust modulation of the conductance even at liquid nitrogen temperature, while allowing an ultimate control of the electron filling down to the last free carrier. Potential further applications of the technique to time-resolved spin manipulation are also discussed.
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Submitted 22 December, 2010;
originally announced December 2010.
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InAs nanowire hot-electron Josephson transistor
Authors:
S. Roddaro,
A. Pescaglini,
D. Ercolani,
L. Sorba,
F. Giazotto,
F. Beltram
Abstract:
At a superconductor (S)-normal metal (N) junction pairing correlations can "leak-out" into the N region. This proximity effect [1, 2] modifies the system transport properties and can lead to supercurrent flow in SNS junctions [3]. Recent experimental works showed the potential of semiconductor nanowires (NWs) as building blocks for nanometre-scale devices [4-7], also in combination with supercondu…
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At a superconductor (S)-normal metal (N) junction pairing correlations can "leak-out" into the N region. This proximity effect [1, 2] modifies the system transport properties and can lead to supercurrent flow in SNS junctions [3]. Recent experimental works showed the potential of semiconductor nanowires (NWs) as building blocks for nanometre-scale devices [4-7], also in combination with superconducting elements [8-12]. Here, we demonstrate an InAs NW Josephson transistor where supercurrent is controlled by hot-quasiparticle injection from normal-metal electrodes. Operational principle is based on the modification of NW electron-energy distribution [13-20] that can yield reduced dissipation and high-switching speed. We shall argue that exploitation of this principle with heterostructured semiconductor NWs opens the way to a host of out-of-equilibrium hybrid-nanodevice concepts [7, 21].
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Submitted 10 March, 2010;
originally announced March 2010.
