-
Evolution of the Fermi surface of 1T-VSe$_2$ across a structural phase transition
Authors:
Turgut Yilmaz,
Xiao Tong,
Jerzy T. Sadowski,
Sooyeon Hwang,
Kenneth Evans-Lutterodt,
Kim Kisslinger,
Elio Vescovo
Abstract:
The electronic origin of the structural transition in 1T-VSe$_2$ is re-evaluated through an extensive angle-resolved photoemission spectroscopy experiment. The components of the band structure, missing in previous reports, are revealed. Earlier observations, shown to be temperature independent and therefore not correlated with the phase transition, are explained in terms of the increased complexit…
▽ More
The electronic origin of the structural transition in 1T-VSe$_2$ is re-evaluated through an extensive angle-resolved photoemission spectroscopy experiment. The components of the band structure, missing in previous reports, are revealed. Earlier observations, shown to be temperature independent and therefore not correlated with the phase transition, are explained in terms of the increased complexity of the band structure close to the Fermi level. Only the overall size of the Fermi surface is found to be positively correlated with the phase transition at 110 K. These observations, quite distant from the charge density wave scenario commonly considered for 1T-VSe$_2$, bring fresh perspectives toward the correct description of structural transitions in dichalcogenides materials.
△ Less
Submitted 12 August, 2024;
originally announced August 2024.
-
A structural analysis of ordered Cs$_{3}$Sb films grown on single crystal graphene and silicon carbide substrates
Authors:
C. Pennington,
M. Gaowei,
E. M. Echeverria,
K. Evans-Lutterodt,
A. Galdi,
T. Juffmann,
S. Karkare,
J. Maxson,
S. J. van der Molen,
P. Saha,
J. Smedley,
W. G. Stam,
R. M. Tromp
Abstract:
Alkali antimonides are well established as high efficiency, low intrinsic emittance photocathodes for accelerators and photon detectors. However, conventionally grown alkali antimonide films are polycrystalline with surface disorder and roughness that can limit achievable beam brightness. Ordering the crystalline structure of alkali antimonides has the potential to deliver higher brightness electr…
▽ More
Alkali antimonides are well established as high efficiency, low intrinsic emittance photocathodes for accelerators and photon detectors. However, conventionally grown alkali antimonide films are polycrystalline with surface disorder and roughness that can limit achievable beam brightness. Ordering the crystalline structure of alkali antimonides has the potential to deliver higher brightness electron beams by reducing surface disorder and enabling the engineering of material properties at the level of atomic layers. In this report, we demonstrate the growth of ordered Cs$_{3}$Sb films on single crystal substrates 3C-SiC and graphene-coated 4H-SiC using pulsed laser deposition and conventional thermal evaporation growth techniques. The crystalline structures of the Cs$_{3}$Sb films were examined using reflection high energy electron diffraction (RHEED) and X-ray diffraction (XRD) diagnostics, while film thickness and roughness estimates were made using x-ray reflectivity (XRR). With these tools, we observed ordered domains in less than 10 nm thick films with quantum efficiencies greater than one percent at 530 nm. Moreover, we identify structural features such as Laue oscillations indicative of highly ordered films. We found that Cs$_{3}$Sb films grew with flat, fiber-textured surfaces on 3C-SiC and with multiple ordered domains and sub-nanometer surface roughness on graphene-coated 4H-SiC under our growth conditions. We identify the crystallographic orientations of Cs$_{3}$Sb grown on graphene-coated 4H-SiC substrates and discuss the significance of examining the crystal structure of these films for growing epitaxial heterostructures in future experiments.
△ Less
Submitted 16 July, 2024;
originally announced July 2024.
-
Role of ferroelectric polarization during growth of highly strained ferroelectrics revealed by in-situ x-ray diffraction
Authors:
Rui Liu,
Jeffrey G. Ulbrandt,
Hsiang-Chun Hsing,
Anna Gura,
Benjamin Bein,
Alec Sun,
Charles Pan,
Giulia Bertino,
Amanda Lai,
Kaize Cheng,
Eli Doyle,
Kenneth Evans-Lutterodt,
Randall L. Headrick,
Matthew Dawber
Abstract:
Strain engineering of perovskite oxide thin films has proven to be an extremely powerful method for enhancing and inducing ferroelectric behavior. In ferroelectric thin films and superlattices, the polarization is intricately linked to crystal structure, but we show here that it can also play an important role in the growth process, influencing growth rates, relaxation mechanisms, electrical prope…
▽ More
Strain engineering of perovskite oxide thin films has proven to be an extremely powerful method for enhancing and inducing ferroelectric behavior. In ferroelectric thin films and superlattices, the polarization is intricately linked to crystal structure, but we show here that it can also play an important role in the growth process, influencing growth rates, relaxation mechanisms, electrical properties and domain structures. We have studied this effect in detail by focusing on the properties of BaTiO$_{3}$ thin films grown on very thin layers of PbTiO$_{3}$ using a combination of x-ray diffraction, piezoforce microscopy, electrical characterization and rapid in-situ x-ray diffraction reciprocal space maps during the growth using synchrotron radiation. Using a simple model we show that the changes in growth are driven by the energy cost for the top material to sustain the polarization imposed upon it by the underlying layer, and these effects may be expected to occur in other multilayer systems where polarization is present during growth. Our research motivates the concept of polarization engineering during the growth process as a new and complementary approach to strain engineering.
△ Less
Submitted 26 September, 2019;
originally announced September 2019.
-
Homoepitaxial growth of SrTiO$_3$ by Pulsed Laser Deposition: energetic vs thermal growth
Authors:
Jeffrey G. Ulbrandt,
Xiaozhi Zhang,
Rui Liu,
Kenneth Evans-Lutterodt,
Matthew Dawber,
Randall L. Headrick
Abstract:
Pulsed Laser Deposition (PLD) is widely used to grow epitaxial thin films of quantum materials such as complex oxides. Here, we use in-situ X-ray scattering to study homoepitaxy of SrTiO$_3$ by energetic (e-) and thermalized (th-) PLD. We find that e-PLD suppresses the lateral growth of two-dimensional islands, which suggests that energetic particles break up smaller islands. Fast interlayer trans…
▽ More
Pulsed Laser Deposition (PLD) is widely used to grow epitaxial thin films of quantum materials such as complex oxides. Here, we use in-situ X-ray scattering to study homoepitaxy of SrTiO$_3$ by energetic (e-) and thermalized (th-) PLD. We find that e-PLD suppresses the lateral growth of two-dimensional islands, which suggests that energetic particles break up smaller islands. Fast interlayer transport occurs for both e-PLD and th-PLD, implying a process operating on sub-microsecond timescales that doesn't depend strongly on the kinetic energy of the incident particles.
△ Less
Submitted 18 July, 2019;
originally announced July 2019.
-
A Virtual Young's Double Slit Experiment for Hard X-ray Photons
Authors:
A. F. Isakovic,
A. Stein,
J. B. Warren,
A. R. Sandy,
S. Narayanan,
M. Sprung,
J. M. Ablett,
D. P. Siddons,
M. Metzler,
K. Evans-Lutterodt
Abstract:
We have implemented a virtual Young's double slit experiment for hard X-ray photons with micro-fabricated bi-prisms. We observe fringe patterns with a scintillator, and quantify interferograms by detecting X-ray fluorescence from a scanned 30nm Cr metal film. The observed intensities are best modeled with a near-field, Fresnel analysis. The maximum fringe number in the overlap region is proporti…
▽ More
We have implemented a virtual Young's double slit experiment for hard X-ray photons with micro-fabricated bi-prisms. We observe fringe patterns with a scintillator, and quantify interferograms by detecting X-ray fluorescence from a scanned 30nm Cr metal film. The observed intensities are best modeled with a near-field, Fresnel analysis. The maximum fringe number in the overlap region is proportional to the ratio of real to imaginary parts refractive index of the prism material. The horizontal and vertical transverse coherence lengths at beamline APS 8-ID are measured.
△ Less
Submitted 28 October, 2009;
originally announced October 2009.
