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Extending non-adiabatic rate theory to strong electronic couplings in the Marcus inverted regime
Authors:
Thomas P Fay
Abstract:
Electron transfer reactions play an essential role in many chemical and biological processes. Fermi's Golden rule, which assumes that the coupling between electronic states is small, has formed the foundation of electron transfer rate theory, however in short range electron/energy transfer reactions this coupling can become very large, and therefore Fermi's Golden Rule fails to make even qualitati…
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Electron transfer reactions play an essential role in many chemical and biological processes. Fermi's Golden rule, which assumes that the coupling between electronic states is small, has formed the foundation of electron transfer rate theory, however in short range electron/energy transfer reactions this coupling can become very large, and therefore Fermi's Golden Rule fails to make even qualitatively accurate rate predictions. In this paper I present a simple modified Golden Rule theory to describe electron transfer in the Marcus inverted regime at arbitrarily large electronic coupling strengths. The theory is based on an optimal global rotation of the diabatic states, which makes it compatible with existing methods for calculating Golden Rule rates that can account for nuclear quantum effects with anharmonic potentials. Furthermore the Optimal Golden Rule (OGR) theory can also combined with analytic theories for non-adiabatic rates, such as Marcus theory and Marcus-Levich-Jortner theory, offering clear physical insight into strong electronic coupling effects in non-adiabatic processes. OGR theory is also tested on a large set of spin-boson models and an anharmonic model against exact quantum dynamics calculations, where it performs well, correctly predicting rate turnover at large coupling strengths. Finally, an example application to a BODIPY-Anthracene photosensitizer reveals that strong coupling effects inhibit excited state charge recombination in this system, reducing the rate of this process by a factor of four. Overall OGR theory offers a new approach to calculating electron transfer rates at strong couplings, offering new physical insight into a range of non-adiabatic processes.
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Submitted 18 July, 2024; v1 submitted 1 July, 2024;
originally announced July 2024.
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Coherent control from quantum committment probabilities
Authors:
Michelle C. Anderson,
Amro Dodin,
Thomas P. Fay,
David T. Limmer
Abstract:
We introduce a general definition of a quantum committor in order to clarify reaction mechanisms and facilitate control in processes where coherent effects are important. With a quantum committor, we generalize the notion of a transition state to quantum superpositions and quantify the effect of interference on the progress of the reaction. The formalism is applicable to any linear quantum master…
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We introduce a general definition of a quantum committor in order to clarify reaction mechanisms and facilitate control in processes where coherent effects are important. With a quantum committor, we generalize the notion of a transition state to quantum superpositions and quantify the effect of interference on the progress of the reaction. The formalism is applicable to any linear quantum master equation supporting metastability for which absorbing boundary conditions designating the reactant and product states can be applied. We use this formalism to determine the dependence of the quantum transition state on coherences in a polaritonic system and optimize the initialization state of a conical intersection model to control reactive outcomes, achieving yields of the desired state approaching 100%. In addition to providing a practical tool, the quantum committor provides a conceptual framework for understanding reactions in cases when classical intuitions fail.
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Submitted 28 March, 2024;
originally announced March 2024.
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On the mechanism of polaritonic rate suppression from quantum transition paths
Authors:
Michelle C. Anderson,
Esmae J. Woods,
Thomas P. Fay,
David J. Wales,
David T. Limmer
Abstract:
Polariton chemistry holds promise for facilitating mode-selective chemical reactions, but the underlying mechanism behind the rate modifications observed under vibrational strong coupling is not well understood. Using the recently developed quantum transition path theory, we have uncovered a mechanism of resonant suppression of a thermal reaction rate in a simple model polaritonic system, consisti…
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Polariton chemistry holds promise for facilitating mode-selective chemical reactions, but the underlying mechanism behind the rate modifications observed under vibrational strong coupling is not well understood. Using the recently developed quantum transition path theory, we have uncovered a mechanism of resonant suppression of a thermal reaction rate in a simple model polaritonic system, consisting of a reactive mode in a bath confined to a lossless microcavity with a single photon mode. This mechanism was uncovered by resolving the quantum dynamical reactive pathways and identifying their rate limiting transitions. Upon inspecting the wavefunctions associated with the rate limiting transition, we observed the formation of a polariton and identified the concomitant rate suppression as due to hybridization between the reactive mode and the cavity mode, which inhibits bath-mediated tunneling during the reaction. The transition probabilities that define the quantum master equation can be directly translated into a visualisation of the corresponding polariton energy landscape. This landscape exhibits a double funnel structure, with a large barrier between the initial and final states. This mechanism of resonant rate suppression is found to be robust to model parameters and computational details, and thus expected to be general.
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Submitted 18 August, 2023; v1 submitted 25 April, 2023;
originally announced April 2023.
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Broken Symmetry Effects due to Polarization on Resonant Tunneling Transport in Double-Barrier Nitride Heterostructures
Authors:
Jimy Encomendero,
Vladimir Protasenko,
Berardi Sensale-Rodriguez,
Patrick Fay,
Farhan Rana,
Debdeep Jena,
Huili Grace Xing
Abstract:
The phenomenon of resonant tunneling transport through polar double-barrier heterostructures is systematically investigated using a combined experimental and theoretical approach. On the experimental side, GaN/AlN RTDs are grown by MBE. In-situ electron diffraction is employed to monitor the number of monolayers incorporated into each tunneling barrier. Using this precise epitaxial control at the…
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The phenomenon of resonant tunneling transport through polar double-barrier heterostructures is systematically investigated using a combined experimental and theoretical approach. On the experimental side, GaN/AlN RTDs are grown by MBE. In-situ electron diffraction is employed to monitor the number of monolayers incorporated into each tunneling barrier. Using this precise epitaxial control at the monolayer level, we demonstrate exponential modulation of the resonant tunneling current as a function of barrier thickness. Both the peak voltage and characteristic threshold bias exhibit a dependence on barrier thickness as a result of the intense electric fields present in the polar heterostructures. To get further insight into the asymmetric tunneling injection, we present an analytical theory for tunneling transport across polar heterostructures. A general expression for the resonant tunneling current with contributions from coherent and sequential tunneling processes is introduced. After applying this theory to the case of GaN/AlN RTDs, their experimental current-voltage characteristics are reproduced over both bias polarities, with tunneling currents spanning several orders of magnitude. This agreement allows us to elucidate the role played by the internal polarization fields on the magnitude of the tunneling current and broadening of the resonant line shape. Under reverse bias, we identify new tunneling features originating from highly attenuated resonant tunneling phenomena, which are completely captured by our model. Our analytical model, provides a simple expression which reveals the connection between the polar RTD design parameters and its current-voltage characteristics. This new theory paves the way for the design of polar resonant tunneling devices exhibiting efficient resonant current injection and enhanced tunneling dynamics, as required in various practical applications.
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Submitted 15 March, 2023;
originally announced March 2023.
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Spin selective charge recombination in chiral donor-bridge-acceptor triads
Authors:
Thomas P. Fay,
David T. Limmer
Abstract:
In this paper we outline a physically motivated framework for describing spin-selective recombination processes in chiral systems, from which we derive spin-selective reaction operators for recombination reactions of donor-bridge-acceptor molecules, where the electron transfer is mediated by chirality and spin-orbit coupling. In general the recombination process is selective only for spin-coherenc…
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In this paper we outline a physically motivated framework for describing spin-selective recombination processes in chiral systems, from which we derive spin-selective reaction operators for recombination reactions of donor-bridge-acceptor molecules, where the electron transfer is mediated by chirality and spin-orbit coupling. In general the recombination process is selective only for spin-coherence between singlet and triplet states, and it is not in general selective for spin polarisation. We find that spin polarisation selectivity only arises in hopping mediated electron transfer. We describe how this effective spin-polarisation selectivity is a consequence of spin-polarisation generated transiently in the intermediate state. The recombination process also augments the coherent spin dynamics of the charge separated state, which is found to have a significant effect on recombination dynamics and to destroy any long-lived spin polarisation. Although we only consider a simple donor-bridge-acceptor system, the framework we present here can be straightforwardly extended to describe spin-selective recombination processes in more complex systems.
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Submitted 8 March, 2023;
originally announced March 2023.
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Coupled charge and energy transfer dynamics in light harvesting complexes from a hybrid hierarchical equations of motion approach
Authors:
Thomas P. Fay,
David T. Limmer
Abstract:
We describe a method for simulating exciton dynamics in protein-pigment complexes, including effects from charge transfer as well as fluorescence. The method combines the hierarchical equations of motion, which are used to describe quantum dynamics of excitons, and the Nakajima-Zwanzig quantum master equation, which is used to describe slower charge transfer processes. We study the charge transfer…
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We describe a method for simulating exciton dynamics in protein-pigment complexes, including effects from charge transfer as well as fluorescence. The method combines the hierarchical equations of motion, which are used to describe quantum dynamics of excitons, and the Nakajima-Zwanzig quantum master equation, which is used to describe slower charge transfer processes. We study the charge transfer quenching in light harvesting complex II, a protein postulated to control non-photochemcial quenching in many plant species. Using our hybrid approach, we find good agreement between our calculation and experimental measurements of the excitation lifetime. Furthermore our calculations reveal that the exciton energy funnel plays an important role in determining quenching efficiency, a conclusion we expect to extend to other proteins that perform protective excitation quenching. This also highlights the need for simulation methods that properly account for the interplay of exciton dynamics and charge transfer processes.
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Submitted 24 July, 2022;
originally announced July 2022.
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A simple improved low temperature correction for the hierarchical equations of motion
Authors:
Thomas P Fay
Abstract:
The study of open system quantum dynamics has been transformed by the hierarchical equations of motion (HEOM) method, which gives the exact dynamics for a system coupled to a harmonic bath at arbitrary temperature and system-bath coupling strength. However in its standard form the method is only consistent with the weak-coupling quantum master equation at all temperatures when many auxiliary densi…
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The study of open system quantum dynamics has been transformed by the hierarchical equations of motion (HEOM) method, which gives the exact dynamics for a system coupled to a harmonic bath at arbitrary temperature and system-bath coupling strength. However in its standard form the method is only consistent with the weak-coupling quantum master equation at all temperatures when many auxiliary density operators are included in the hierarchy, even when low temperature corrections are included. Here we propose a new low temperature correction scheme for the termination of the hierarchy based on Zwanzig projection which alleviates this problem, and restores consistency with the weak-coupling master equation with a minimal hierarchy. The utility of the new correction scheme is demonstrated on a range of model systems, including the Fenna-Metthews-Olson complex. The new closure is found to improve convergence of the HEOM even beyond the weak-coupling limit and is very straightforward to implement in existing HEOM codes.
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Submitted 29 June, 2022; v1 submitted 18 May, 2022;
originally announced May 2022.
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The origin of chirality induced spin selectivity in photo-induced electron transfer
Authors:
Thomas P. Fay,
David T. Limmer
Abstract:
Here we propose a mechanism by which spin polarization can be generated dynamically in chiral molecular systems undergoing photo-induced electron transfer. The proposed mechanism explains how spin polarization emerges in systems where charge transport is dominated by incoherent hopping, mediated by spin orbit and electronic exchange couplings through an intermediate charge transfer state. We deriv…
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Here we propose a mechanism by which spin polarization can be generated dynamically in chiral molecular systems undergoing photo-induced electron transfer. The proposed mechanism explains how spin polarization emerges in systems where charge transport is dominated by incoherent hopping, mediated by spin orbit and electronic exchange couplings through an intermediate charge transfer state. We derive a simple expression for the spin polarization that predicts a non-monotonic temperature dependence consistent with recent experiments. We validate this theory using approximate quantum master equations and the numerically exact hierarchical equations of motion. The proposed mechanism of chirality induced spin selectivity should apply to many chiral systems, and the ideas presented here have implications for the study of spin transport at temperatures relevant to biology, and provide simple principles for the molecular control of spins in fluctuating environments.
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Submitted 11 June, 2021;
originally announced June 2021.
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Level spectrum and charge relaxation in a silicon double quantum dot probed by dual-gate reflectometry
Authors:
Alessandro Crippa,
Romain Maurand,
Dharmraj Kotekar-Patil,
Andrea Corna,
Heorhii Bohuslavskyi,
Alexei O. Orlov,
Patrick Fay,
Romain Laviéville,
Silvain Barraud,
Maud Vinet,
Marc Sanquer,
Silvano De Franceschi,
Xavier Jehl
Abstract:
We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively connected to the two gate electrodes. By simultaneously measuring their dispersive response, we obtain the complete charge stability diagram of the device. Char…
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We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively connected to the two gate electrodes. By simultaneously measuring their dispersive response, we obtain the complete charge stability diagram of the device. Charge transitions between the two quantum dots and between each quantum dot and either the source or the drain contact are detected through phase shifts in the reflected radio-frequency signals. At finite bias, reflectometry allows probing charge transitions to excited quantum-dot states thereby enabling direct access to the energy level spectra of the quantum dots. Interestingly, we find that in the presence of charge transport across the two dots the reflectometry signatures of interdot transitions display a dip-peak structure containing quantitative information on the charge relaxation rates in the double quantum dot.
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Submitted 19 January, 2017; v1 submitted 12 October, 2016;
originally announced October 2016.
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Repeatable Room Temperature Negative Differential Conductance in GaN/AlN Resonant Tunneling Diodes
Authors:
Jimy Encomendero,
Faiza Afroz Faria,
S. M. Islam,
Vladimir Protasenko,
Sergei Rouvimov,
Patrick Fay,
Debdeep Jena,
Huili Grace Xing
Abstract:
Double barrier GaN/AlN resonant tunneling heterostructures have been grown by molecular beam epitaxy on the (0001) plane of commercially available bulk GaN substrates. Resonant tunneling diodes were fabricated; room temperature current-voltage measurements reveal the presence of a negative differential conductance region under forward bias with peak current densities of ~6.4 $kA/cm^2$ and a peak t…
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Double barrier GaN/AlN resonant tunneling heterostructures have been grown by molecular beam epitaxy on the (0001) plane of commercially available bulk GaN substrates. Resonant tunneling diodes were fabricated; room temperature current-voltage measurements reveal the presence of a negative differential conductance region under forward bias with peak current densities of ~6.4 $kA/cm^2$ and a peak to valley current ratio of ~1.3. Reverse bias operation presents a characteristic turn-on threshold voltage intimately linked to the polarization fields present in the heterostructure. An analytic electrostatic model is developed to capture the unique features of polar-heterostructure-based resonant tunneling diodes; both the resonant and threshold voltages are derived as a function of the design parameters and polarization fields. Subsequent measurements confirm the repeatability of the negative conductance and demonstrate that III-nitride tunneling heterostructures are capable of robust resonant transport at room temperature.
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Submitted 26 June, 2016;
originally announced June 2016.
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Polarization-induced Zener Tunnel Diodes in GaN/InGaN/GaN Heterojunctions
Authors:
Xiaodong Yan,
Wenjun Li,
S. M. Islam,
Kasra Pourang,
Huili Xing,
Patrick Fay,
Debdeep Jena
Abstract:
By the insertion of thin InGaN layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium compos…
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By the insertion of thin InGaN layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the specific challenges in potentially taking such junctions towards nitride-based polarization-induced tunneling field-effect transistors.
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Submitted 22 August, 2015;
originally announced August 2015.
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Defect detection in nano-scale transistors based on radio-frequency reflectometry
Authors:
B. J. Villis,
A. O. Orlov,
X. Jehl,
G. L. Snider,
P. Fay,
M. Sanquer
Abstract:
Radio-frequency reflectometry in silicon single-electron transistors (SETs) is presented. At low temperatures (<4 K), in addition to the expected Coulomb blockade features associated with charging of the SET dot, quasi-periodic oscillations are observed that persist in the fully depleted regime where the SET dot is completely empty. A model, confirmed by simulations, indicates that these oscillati…
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Radio-frequency reflectometry in silicon single-electron transistors (SETs) is presented. At low temperatures (<4 K), in addition to the expected Coulomb blockade features associated with charging of the SET dot, quasi-periodic oscillations are observed that persist in the fully depleted regime where the SET dot is completely empty. A model, confirmed by simulations, indicates that these oscillations originate from charging of an unintended floating gate located in the heavily doped polycrystalline silicon gate stack. The technique used in this experiment can be applied for detailed spectroscopy of various charge defects in nanoscale SETs and field effect transistors
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Submitted 21 September, 2011;
originally announced September 2011.
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Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design
Authors:
Debdeep Jena,
John Simon,
Albert,
Wang,
Yu Cao,
Kevin Goodman,
Jai Verma,
Satyaki Ganguly,
Guowang Li,
Kamal Karda,
Vladimir Protasenko,
Chuanxin Lian,
Thomas Kosel,
Patrick Fay,
Huili Xing
Abstract:
The role of spontaneous and piezoelectric polarization in III-V nitride heterostructure devices is discussed. Problems as well as opportunities in incorporating polarization in abrupt and graded heterojunctions composed of binary, ternary, and quaternary nitrides are outlined.
The role of spontaneous and piezoelectric polarization in III-V nitride heterostructure devices is discussed. Problems as well as opportunities in incorporating polarization in abrupt and graded heterojunctions composed of binary, ternary, and quaternary nitrides are outlined.
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Submitted 30 October, 2010;
originally announced November 2010.
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Polarization-Induced Zener Tunnel Junctions in Wide-Bandgap Heterostructures
Authors:
J. Simon,
Z. Zhang,
K. Goodman,
T. Kosel,
P. Fay,
D. Jena
Abstract:
The large electronic polarization in III-V nitrides allow for novel physics not possible in other semiconductor families. In this work, interband Zener tunneling in wide-bandgap GaN heterojunctions is demonstrated by using polarization-induced electric fields. The resulting tunnel diodes are more conductive under reverse bias, which has applications for zero-bias rectification and mm-wave imagin…
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The large electronic polarization in III-V nitrides allow for novel physics not possible in other semiconductor families. In this work, interband Zener tunneling in wide-bandgap GaN heterojunctions is demonstrated by using polarization-induced electric fields. The resulting tunnel diodes are more conductive under reverse bias, which has applications for zero-bias rectification and mm-wave imaging. Since interband tunneling is traditionally prohibitive in wide-bandgap semiconductors, these polarization-induced structures and their variants can enable a number of devices such as multijunction solar cells that can operate under elevated temperatures and high fields.
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Submitted 17 March, 2009;
originally announced March 2009.
