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Quantitative analysis of the blue-green single-photon emission from a quantum dot in a thick tapered nanowire
Authors:
Saransh Raj Gosain,
Edith Bellet-Amalric,
Eric Robin,
Martien den Hertog,
Gilles Nogues,
Joël Cibert,
Kuntheak Kheng,
David Ferrand
Abstract:
Quantum dots acting as single photon emitters in the blue-green range are fabricated and characterized at cryogenic temperature. They consist in CdSe dots inserted in (Zn,Mg)Se nanowires with a thick shell. Photoluminescence spectra, decay curves and autocorrelation functions were measured under nonresonant continuous-wave and pulsed excitation. An analytical approach is applied simultaneously to…
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Quantum dots acting as single photon emitters in the blue-green range are fabricated and characterized at cryogenic temperature. They consist in CdSe dots inserted in (Zn,Mg)Se nanowires with a thick shell. Photoluminescence spectra, decay curves and autocorrelation functions were measured under nonresonant continuous-wave and pulsed excitation. An analytical approach is applied simultaneously to the decay curves and correlation functions. It allows a quantitative description of how these two quantities are affected by the exciton rise due to biexciton feeding, the bright exciton decay, the effect of the dark exciton, and the re-excitation between two laser pulses. Linewidths at our limit of resolution (200 $μ$eV) are recorded. The reported correlation counts vary from a full control by re-excitation from traps, to a small contribution of re-excitation by mobile carriers or other QDs, as low as 5%.
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Submitted 16 February, 2023; v1 submitted 6 May, 2022;
originally announced May 2022.
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Light-hole states in a strained quantum dot: numerical calculation and phenomenological models
Authors:
K. Moratis,
J. Cibert,
D. Ferrand,
Y. -M. Niquet
Abstract:
Starting from the numerical solution of the 6-band \textbf{k.p} description of a lattice-mismatched ellipsoidal quantum dot situated inside a nanowire, including a spin Zeeman effect with values appropriate to a dilute magnetic semiconductor, we propose and test phenomenological models of the effect of the built-in strain on the heavy hole, light hole and exciton states. We test the validity and t…
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Starting from the numerical solution of the 6-band \textbf{k.p} description of a lattice-mismatched ellipsoidal quantum dot situated inside a nanowire, including a spin Zeeman effect with values appropriate to a dilute magnetic semiconductor, we propose and test phenomenological models of the effect of the built-in strain on the heavy hole, light hole and exciton states. We test the validity and the limits of a description restricted to a ($Γ_8$) quadruplet of ground states and we demonstrate the role of the interactions of the light-hole state with light-hole excited states. We show that the built-in axial strain not only defines the character, heavy-hole or light-hole, of the ground state, but also mixes significantly the light-hole state with the split-off band's states: Even for a spin-orbit energy as large as 1 eV, that mixing induces first-order modifications of properties such as the spin value and anisotropy, the oscillator strength, and the electron-hole exchange, for which we extend the description to the light-hole exciton. CdTe/ZnTe quantum dots are mainly used as a test case but the concepts we discuss apply to many heterostructures, from mismatched II-VI and III-V quantum dots and nanowires, to III-V nanostructures submitted to an applied stress and to silicon nanodevices with even smaller residual strains.
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Submitted 2 June, 2021; v1 submitted 3 August, 2020;
originally announced August 2020.
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Light / heavy hole switching with correlated characterization on a single quantum dot : Probing the light hole / heavy hole switching with correlated magneto-optical spectroscopy and chemical analysis on a single quantum dot
Authors:
Alberto Artioli,
Pamela Rueda-Fonseca,
Kimon Moratis,
Jean-François Motte,
Fabrice Donatini,
Martien I Den Hertog,
Eric Robin,
Régis André,
Yann-Michel Niquet,
Edith Bellet-Amalric,
Joel Cibert,
David Ferrand
Abstract:
A whole series of complementary studies have been performed on the same, single nanowire containing a quantum dot: cathodoluminescence spectroscopy and imaging, micro-photoluminescence spectroscopy under magnetic field and as a function of temperature, and energy-dispersive X-ray spectrometry and imaging. The ZnTe nanowire was deposited on a Si 3 N 4 membrane with Ti/Al patterns. The complete set…
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A whole series of complementary studies have been performed on the same, single nanowire containing a quantum dot: cathodoluminescence spectroscopy and imaging, micro-photoluminescence spectroscopy under magnetic field and as a function of temperature, and energy-dispersive X-ray spectrometry and imaging. The ZnTe nanowire was deposited on a Si 3 N 4 membrane with Ti/Al patterns. The complete set of data shows that the CdTe quantum dot features the heavy-hole state as a ground state, although the compressive mismatch strain promotes a light-hole ground state as soon as the aspect ratio is larger than unity (elongated dot). A numerical calculation of the whole structure shows that the transition from the heavy-hole to the light-hole configuration is pushed toward values of the aspect ratio much larger than unity by the presence of a (Zn,Mg)Te shell, and that the effect is further enhanced by a small valence band offset between the semiconductors in the dot and around it.
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Submitted 15 January, 2019;
originally announced January 2019.
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Nanowire growth and sublimation: CdTe quantum dots in ZnTe nanowires
Authors:
Marta Orrù,
Eric Robin,
Martien I Den Hertog,
Kimon Moratis,
Yann Genuist,
Régis André,
David Ferrand,
Joel Cibert,
Edith Bellet-Amalric
Abstract:
The role of the sublimation of the compound and of the evaporation of the constituents from the gold nanoparticle during the growth of semiconductor nanowires is exemplified with CdTe-ZnTe heterostructures. Operating close to the upper temperature limit strongly reduces the amount of Cd present in the gold nanoparticle and the density of adatoms on the nanowire sidewalls. As a result, the growth r…
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The role of the sublimation of the compound and of the evaporation of the constituents from the gold nanoparticle during the growth of semiconductor nanowires is exemplified with CdTe-ZnTe heterostructures. Operating close to the upper temperature limit strongly reduces the amount of Cd present in the gold nanoparticle and the density of adatoms on the nanowire sidewalls. As a result, the growth rate is small and strongly temperature dependent, but a good control of the growth conditions allows the incorporation of quantum dots in nanowires with sharp interfaces and adjustable shape, and it minimizes the radial growth and the subsequent formation of additional CdTe clusters on the nanowire sidewalls, as confirmed by photoluminescence. Uncapped CdTe segments dissolve into the gold nanoparticle when interrupting the flux, giving rise to a bulb-like (pendant-droplet) shape attributed to the Kirkendall effect.
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Submitted 13 April, 2018; v1 submitted 28 March, 2018;
originally announced March 2018.
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Light-hole Exciton in Nanowire Quantum Dot
Authors:
Mathieu Jeannin,
Alberto Artioli,
Pamela Rueda-Fonseca,
Edith Bellet-Amalric,
Kuntheak Kheng,
Régis André,
Serge Tatarenko,
Joël Cibert,
David Ferrand,
Gilles Nogues
Abstract:
Quantum dots inserted inside semiconductor nanowires are extremely promising candidates as building blocks for solid-state based quantum computation and communication. They provide very high crystalline and optical properties and offer a convenient geometry for electrical contacting. Having a complete determination and full control of their emission properties is one of the key goals of nanoscienc…
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Quantum dots inserted inside semiconductor nanowires are extremely promising candidates as building blocks for solid-state based quantum computation and communication. They provide very high crystalline and optical properties and offer a convenient geometry for electrical contacting. Having a complete determination and full control of their emission properties is one of the key goals of nanoscience researchers. Here we use strain as a tool to create in a single magnetic nanowire quantum dot a light-hole exciton, an optically active quasiparticle formed from a single electron bound to a single light hole. In this frame, we provide a general description of the mixing within the hole quadruplet induced by strain or confinement. A multi-instrumental combination of cathodoluminescence, polarisation-resolved Fourier imaging and magneto-optical spectroscopy, allow us to fully characterize the hole ground state, including its valence band mixing with heavy hole states.
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Submitted 24 November, 2016;
originally announced December 2016.
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Atomic-like spin noise in solid-state demonstrated with manganese in cadmium telluride
Authors:
Steeve Cronenberger,
Denis Scalbert,
David Ferrand,
Hervé Boukari,
Joël Cibert
Abstract:
Spin noise spectroscopy is an optical technique which can probe spin resonances non-perturbatively. First applied to atomic vapours, it revealed detailed information about nuclear magnetism and the hyperfine interaction. In solids, this approach has been limited to carriers in semiconductor heterostructures. Here we show that atomic-like spin fluctuations of Mn ions diluted in CdT e (bulk and quan…
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Spin noise spectroscopy is an optical technique which can probe spin resonances non-perturbatively. First applied to atomic vapours, it revealed detailed information about nuclear magnetism and the hyperfine interaction. In solids, this approach has been limited to carriers in semiconductor heterostructures. Here we show that atomic-like spin fluctuations of Mn ions diluted in CdT e (bulk and quantum wells) can be detected through the Kerr rotation associated to excitonic transitions. Zeeman transitions within and between hyperfine multiplets are clearly observed in zero and small magnetic fields and reveal the local symmetry because of crystal field and strain. The linewidths of these resonances are close to the dipolar limit. The sensitivity is high enough to open the way towards the detection of a few spins in systems where the decoherence due to nuclear spins can be suppressed by isotopic enrichment, and towards spin resonance microscopy with important applications in biology and materials science.
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Submitted 19 October, 2015;
originally announced October 2015.
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Strain in crystalline core-shell nanowires
Authors:
David Ferrand,
Joel Cibert
Abstract:
The strain configuration induced by the lattice mismatch in a core-shell nanowire is calculated analytically, taking into account the crystal anisotropy and the difference in stiffness constants of the two materials. The method is applied to nanowires with the wurtzite structure or the zinc-blende structure with the hexagonal / trigonal axis along the nanowire, and the results are compared to avai…
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The strain configuration induced by the lattice mismatch in a core-shell nanowire is calculated analytically, taking into account the crystal anisotropy and the difference in stiffness constants of the two materials. The method is applied to nanowires with the wurtzite structure or the zinc-blende structure with the hexagonal / trigonal axis along the nanowire, and the results are compared to available numerical calculations and experimental data. It is also applied to multishell nanowires, and to core-shell nanowires grown along the $<001>$ axis of cubic semiconductors.
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Submitted 23 July, 2014; v1 submitted 15 March, 2014;
originally announced March 2014.
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Optical properties of single ZnTe nanowires grown at low temperature
Authors:
Alberto Artioli,
Pamela Rueda-Fonseca,
Petr Stepanov,
Edith Bellet-Amalric,
Martien Den Hertog,
Catherine Bougerol,
Yann Genuist,
Fabrice Donatini,
Régis André,
Gilles Nogues,
Kuntheak Kheng,
Serge Tatarenko,
David Ferrand,
Joel Cibert
Abstract:
Optically active gold-catalyzed ZnTe nanowires have been grown by molecular beam epitaxy, on a ZnTe(111) buffer layer, at low temperature 350\degree under Te rich conditions, and at ultra-low density (from 1 to 5 nanowires per micrometer^{2}. The crystalline structure is zinc blende as identified by transmission electron microscopy. All nanowires are tapered and the majority of them are <111> orie…
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Optically active gold-catalyzed ZnTe nanowires have been grown by molecular beam epitaxy, on a ZnTe(111) buffer layer, at low temperature 350\degree under Te rich conditions, and at ultra-low density (from 1 to 5 nanowires per micrometer^{2}. The crystalline structure is zinc blende as identified by transmission electron microscopy. All nanowires are tapered and the majority of them are <111> oriented. Low temperature micro-photoluminescence and cathodoluminescence experiments have been performed on single nanowires. We observe a narrow emission line with a blue-shift of 2 or 3 meV with respect to the exciton energy in bulk ZnTe. This shift is attributed to the strain induced by a 5 nm-thick oxide layer covering the nanowires, and this assumption is supported by a quantitative estimation of the strain in the nanowires.
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Submitted 12 June, 2013;
originally announced June 2013.
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Influence of s,p-d and s-p exchange couplings on exciton splitting in (Zn,Mn)O
Authors:
W. Pacuski,
J. Suffczynski,
P. Osewski,
P. Kossacki,
A. Golnik,
J. A. Gaj,
C. Deparis,
C. Morhain,
E. Chikoidze,
Y. Dumont,
D. Ferrand,
J. Cibert,
T. Dietl
Abstract:
This work presents results of near-band gap magnetooptical studies on (Zn,Mn)O epitaxial layers. We observe excitonic transitions in reflectivity and photoluminescence, that shift towards higher energies when the Mn concentration increases and split nonlinearly under the magnetic field. Excitonic shifts are determined by the s,p-d exchange coupling to magnetic ions, by the electron-hole s-p exchan…
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This work presents results of near-band gap magnetooptical studies on (Zn,Mn)O epitaxial layers. We observe excitonic transitions in reflectivity and photoluminescence, that shift towards higher energies when the Mn concentration increases and split nonlinearly under the magnetic field. Excitonic shifts are determined by the s,p-d exchange coupling to magnetic ions, by the electron-hole s-p exchange, and the spin-orbit interactions. A quantitative description of the magnetoreflectivity findings indicates that the free excitons A and B are associated with the Gamma_7 and Gamma_9 valence bands, respectively, the order reversed as compared to wurtzite GaN. Furthermore, our results show that the magnitude of the giant exciton splittings, specific to dilute magnetic semiconductors, is unusual: the magnetoreflectivity data is described by an effective exchange energy N_0(beta-alpha)=+0.2+/-0.1 eV, what points to small and positive N_0 beta. It is shown that both the increase of the gap with x and the small positive value of the exchange energy N_0 beta corroborate recent theory describing the exchange splitting of the valence band in a non-perturbative way, suitable for the case of a strong p-d hybridization.
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Submitted 10 May, 2011;
originally announced May 2011.
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Magnetization dynamics down to zero field in dilute (Cd,Mn)Te quantum wells
Authors:
Mateusz Goryca,
David Ferrand,
Piotr Kossacki,
Michal Nawrocki,
Wojciech Pacuski,
Wiktor Maslana,
Jan A. Gaj,
Serge Tatarenko,
Joel Cibert,
Tomasz Wojtowicz,
Grzegorz Karczewski
Abstract:
The evolution of the magnetization in (Cd,Mn)Te quantum wells after a short pulse of magnetic field was determined from the giant Zeeman shift of spectroscopic lines. The dynamics in absence of magnetic field was found to be up to three orders of magnitude faster than that at 1 T. Hyperfine interaction and strain are mainly responsible for the fast decay. The influence of a hole gas is clearly v…
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The evolution of the magnetization in (Cd,Mn)Te quantum wells after a short pulse of magnetic field was determined from the giant Zeeman shift of spectroscopic lines. The dynamics in absence of magnetic field was found to be up to three orders of magnitude faster than that at 1 T. Hyperfine interaction and strain are mainly responsible for the fast decay. The influence of a hole gas is clearly visible: at zero field anisotropic holes stabilize the system of Mn ions, while in a magnetic field of 1 T they are known to speed up the decay by opening an additional relaxation channel.
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Submitted 17 October, 2008;
originally announced October 2008.
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Observation of strong-coupling effects in a diluted magnetic semiconductor (Ga,Fe)N
Authors:
W. Pacuski,
P. Kossacki,
D. Ferrand,
A. Golnik,
J. Cibert,
M. Wegscheider,
A. Navarro-Quezada,
A. Bonanni,
M. Kiecana,
M. Sawicki,
T. Dietl
Abstract:
A direct observation of the giant Zeeman splitting of the free excitons in (Ga,Fe)N is reported. The magnetooptical and magnetization data imply the ferromagnetic sign and a reduced magnitude of the effective p-d exchange energy governing the interaction between Fe^{3+} ions and holes in GaN, N_0 beta^(app) = +0.5 +/- 0.2 eV. This finding corroborates the recent suggestion that the strong p-d hy…
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A direct observation of the giant Zeeman splitting of the free excitons in (Ga,Fe)N is reported. The magnetooptical and magnetization data imply the ferromagnetic sign and a reduced magnitude of the effective p-d exchange energy governing the interaction between Fe^{3+} ions and holes in GaN, N_0 beta^(app) = +0.5 +/- 0.2 eV. This finding corroborates the recent suggestion that the strong p-d hybridization specific to nitrides and oxides leads to significant renormalization of the valence band exchange splitting.
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Submitted 24 August, 2007;
originally announced August 2007.
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Excitonic giant Zeeman effect in GaN:Mn^3+
Authors:
W. Pacuski,
D. Ferrand,
J. Cibert,
J. A. Gaj,
A. Golnik,
P. Kossacki,
S. Marcet,
E. Sarigiannidou,
H. Mariette
Abstract:
We describe a direct observation of the excitonic giant Zeeman splitting in (Ga,Mn)N, a wide-gap III-V diluted magnetic semiconductor. Reflectivity and absorption spectra measured at low temperatures display the A and B excitons, with a shift under magnetic field due to s,p-d exchange interactions. Using an excitonic model, we determine the difference of exchange integrals between Mn^3+ and free…
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We describe a direct observation of the excitonic giant Zeeman splitting in (Ga,Mn)N, a wide-gap III-V diluted magnetic semiconductor. Reflectivity and absorption spectra measured at low temperatures display the A and B excitons, with a shift under magnetic field due to s,p-d exchange interactions. Using an excitonic model, we determine the difference of exchange integrals between Mn^3+ and free carriers in GaN, N_0(alpha-beta)=-1.2 +/- 0.2 eV. Assuming a reasonable value of alpha, this implies a positive sign of beta which corresponds to a rarely observed ferromagnetic interaction between the magnetic ions and the holes.
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Submitted 2 March, 2007; v1 submitted 2 March, 2007;
originally announced March 2007.
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Magneto-optical spectroscopy of (Ga,Mn)N epilayers
Authors:
Stéphane Marcet,
David Ferrand,
David Halley,
Shinji Kuroda,
Henri Mariette,
Etienne Gheeraert,
Francisco J. Teran,
Marcin L. Sadowski,
Rose-Marie Galéra,
Joël Cibert
Abstract:
We report on the magneto-optical spectroscopy and cathodoluminescence of a set of wurtzite (Ga,Mn)N epilayers with a low Mn content, grown by molecular beam epitaxy. The sharpness of the absorption lines associated to the Mn$^{3+}$ internal transitions allows a precise study of its Zeeman effect in both Faraday and Voigt configurations. We obtain a good agreement if we assume a dynamical Jahn-Te…
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We report on the magneto-optical spectroscopy and cathodoluminescence of a set of wurtzite (Ga,Mn)N epilayers with a low Mn content, grown by molecular beam epitaxy. The sharpness of the absorption lines associated to the Mn$^{3+}$ internal transitions allows a precise study of its Zeeman effect in both Faraday and Voigt configurations. We obtain a good agreement if we assume a dynamical Jahn-Teller effect in the 3d$^{4}$ configuration of Mn, and we determine the parameters of the effective Hamiltonians describing the $^{5}T\_{2}$ and $^{5}E$ levels, and those of the spin Hamiltonian in the ground spin multiplet, from which the magnetization of the isolated ion can be calculated. On layers grown on transparent substrates, transmission close to the band gap, and the associated magnetic circular dichroism, reveal the presence of the giant Zeeman effect resulting from exchange interactions between the Mn$^{3+}$ ions and the carriers. The spin-hole interaction is found to be ferromagnetic.
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Submitted 2 April, 2006;
originally announced April 2006.
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Effect of the s,p-d exchange interaction on the excitons in (Zn,Co)O epilayers
Authors:
W. Pacuski,
D. Ferrand,
J. Cibert,
C. Deparis,
J. A. Gaj,
P. Kossacki,
C. Morhain
Abstract:
We present a spectroscopic study of (Zn,Co)O layers grown by molecular beam epitaxy on sapphire substrates. (Zn,Co)O is commonly considered as a promising candidate for being a Diluted Magnetic Semiconductor ferromagnetic at room temperature. We performed magneto-optical spectroscopy in the Faraday configuration, by applying a magnetic field up to 11 T, at temperatures down to 1.5 K. For very di…
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We present a spectroscopic study of (Zn,Co)O layers grown by molecular beam epitaxy on sapphire substrates. (Zn,Co)O is commonly considered as a promising candidate for being a Diluted Magnetic Semiconductor ferromagnetic at room temperature. We performed magneto-optical spectroscopy in the Faraday configuration, by applying a magnetic field up to 11 T, at temperatures down to 1.5 K. For very dilute samples (less than 0.5% Co), the giant Zeeman splitting of the A and B excitons is observed at low temperature. It is proportional to the magnetization of isolated Co ions, as calculated using the anisotropy and g-factor deduced from the spectroscopy of the d-d transitions. This demonstrates the existence of spin-carrier coupling. Electron-hole exchange within the exciton has a strong effect on the giant Zeeman splitting observed on the excitons. From the effective spin-exciton coupling, <N0(Alpha-Beta)>_X=0.4 eV, we estimate the difference of the exchange integrals for free carriers, N0|Alpha-Beta|=0.8 eV. The magnetic circular dichroism observed near the energy gap was found to be proportional to the paramagnetic magnetization of anisotropic Co ions even for higher Co contents.
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Submitted 12 August, 2005; v1 submitted 12 August, 2005;
originally announced August 2005.
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Geometrical effects on the optical properties of quantum dots doped with a single magnetic atom
Authors:
Y. Leger,
L. Besombes,
L. Maingault,
D. Ferrand,
H. Mariette
Abstract:
The emission spectra of individual self-assembled quantum dots containing a single magnetic Mn atom differ strongly from dot to dot. The differences are explained by the influence of the system geometry, specifically the in-plane asymmetry of the quantum dot and the position of the Mn atom. Depending on both these parameters, one has different characteristic emission features which either reveal…
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The emission spectra of individual self-assembled quantum dots containing a single magnetic Mn atom differ strongly from dot to dot. The differences are explained by the influence of the system geometry, specifically the in-plane asymmetry of the quantum dot and the position of the Mn atom. Depending on both these parameters, one has different characteristic emission features which either reveal or hide the spin state of the magnetic atom. The observed behavior in both zero field and under magnetic field can be explained quantitatively by the interplay between the exciton-manganese exchange interaction (dependent on the Mn position) and the anisotropic part of the electron-hole exchange interaction (related to the asymmetry of the quantum dot).
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Submitted 7 July, 2005;
originally announced July 2005.
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Microphotoluminescence study of disorder in ferromagnetic (Cd,Mn)Te quantum well
Authors:
W. Maslana,
P. Kossacki,
P. Plochocka,
A. Golnik,
J. A. Gaj,
D. Ferrand,
M. Bertolini,
S. Tatarenko,
J. Cibert
Abstract:
Microphotoluminescence mapping experiments were performed on a modulation doped (Cd,Mn)Te quantum well exhibiting carrier induced ferromagnetism. The zero field splitting that reveals the presence of a spontaneous magnetization in the low-temperature phase, is measured locally; its fluctuations are compared to those of the spin content and of the carrier density, also measured spectroscopically…
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Microphotoluminescence mapping experiments were performed on a modulation doped (Cd,Mn)Te quantum well exhibiting carrier induced ferromagnetism. The zero field splitting that reveals the presence of a spontaneous magnetization in the low-temperature phase, is measured locally; its fluctuations are compared to those of the spin content and of the carrier density, also measured spectroscopically in the same run. We show that the fluctuations of the carrier density are the main mechanism responsible for the fluctuations of the spontaneous magnetization in the ferromagnetic phase, while those of the Mn spin density have no detectable effect at this scale of observation.
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Submitted 27 May, 2004; v1 submitted 27 May, 2004;
originally announced May 2004.
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Photoluminescence of p-doped quantum wells with strong spin splitting
Authors:
P. Kossacki,
H. Boukari,
M. Bertolini,
D. Ferrand,
J. Cibert,
S. Tatarenko,
J. A. Gaj,
B. Deveaud,
V. Ciulin,
M. Potemski
Abstract:
The spectroscopic properties of a spin polarized two-dimensional hole gas are studied in modulation doped (Cd,Mn)Te quantum wells. The giant Zeeman effect induces a significant spin splitting even at very small values of the applied field. Several methods of measuring the carrier density (Hall effect, filling factors of the Landau levels at high field, various manifestations of Moss-Burstein shi…
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The spectroscopic properties of a spin polarized two-dimensional hole gas are studied in modulation doped (Cd,Mn)Te quantum wells. The giant Zeeman effect induces a significant spin splitting even at very small values of the applied field. Several methods of measuring the carrier density (Hall effect, filling factors of the Landau levels at high field, various manifestations of Moss-Burstein shifts) are described and calibrated. The value of the spin splitting needed to fully polarize the hole gas, evidences a strong enhancement of the spin susceptibility of the hole gas due to carrier-carrier interaction. At small values of the spin splitting, whatever the carrier density (non zero) is, photoluminescence lines are due to the formation of charged excitons in the singlet state. Spectral shifts in photoluminescence and in transmission (including an "excitonic Moss-Bustein shift") are observed and discussed in terms of excitations of the partially or fully polarized hole gas. At large spin splitting, and without changing the carrier density, the singlet state of the charged exciton is destabilized in favour of a triplet state configuration of holes. The binding energy of the singlet state is thus measured and found to be independent of the carrier density (in contrast with the splitting between the charged exciton and the neutral exciton lines). The state stable at large spin splitting is close to the neutral exciton at low carrier density, and close to an uncorrelated electron-hole pair at the largest values of the carrier density achieved. The triplet state gives rise to a characteristic double-line structure with an indirect transition to the ground state (with a strong phonon replica) and a direct transition to an excited state of the hole gas.
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Submitted 21 April, 2004;
originally announced April 2004.
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Ferromagnetic (Ga,Mn)N epilayers versus antiferromagnetic GaMn$_3$N clusters
Authors:
R. Giraud,
S. Kuroda,
S. Marcet,
E. Bellet-Amalric,
X. Biquard,
B. Barbara,
D. Fruchart,
D. Ferrand,
J. Cibert,
H. Mariette
Abstract:
Mn-doped wurtzite GaN epilayers have been grown by nitrogen plasma-assisted molecular beam epitaxy. Correlated SIMS, structural and magnetic measurements show that the incorporation of Mn strongly depends on the conditions of the growth. Hysteresis loops which persist at high temperature do not appear to be correlated to the presence of Mn. Samples with up to 2% Mn are purely substitutional Ga…
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Mn-doped wurtzite GaN epilayers have been grown by nitrogen plasma-assisted molecular beam epitaxy. Correlated SIMS, structural and magnetic measurements show that the incorporation of Mn strongly depends on the conditions of the growth. Hysteresis loops which persist at high temperature do not appear to be correlated to the presence of Mn. Samples with up to 2% Mn are purely substitutional Ga$_{1-x}$Mn$_x$N epilayers, and exhibit paramagnetic properties. At higher Mn contents, precipitates are formed which are identified as GaMn$_3$N clusters by x-ray diffraction and absorption: this induces a decrease of the paramagnetic magnetisation. Samples co-doped with enough Mg exhibit a new feature: a ferromagnetic component is observed up to $T_c\sim175$ K, which cannot be related to superparamagnetism of unresolved magnetic precipitates.
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Submitted 7 March, 2004; v1 submitted 16 July, 2003;
originally announced July 2003.
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Hall effect and magnetoresistance in p-type ferromagnetic semiconductors
Authors:
Tomasz Dietl,
Fumihiro Matsukura,
Hideo Ohno,
Joel Cibert,
David Ferrand
Abstract:
Recent works aiming at understanding magnetotransport phenomena in ferromagnetic III-V and II-VI semiconductors are described. Theory of the anomalous Hall effect in p-type magnetic semiconductors is discussed, and the relative role of side-jump and skew-scattering mechanisms assessed for (Ga,Mn)As and (Zn,Mn)Te. It is emphasized that magnetotransport studies of ferromagnetic semiconductors in h…
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Recent works aiming at understanding magnetotransport phenomena in ferromagnetic III-V and II-VI semiconductors are described. Theory of the anomalous Hall effect in p-type magnetic semiconductors is discussed, and the relative role of side-jump and skew-scattering mechanisms assessed for (Ga,Mn)As and (Zn,Mn)Te. It is emphasized that magnetotransport studies of ferromagnetic semiconductors in high magnetic fields make it possible to separate the contributions of the ordinary and anomalous Hall effects, to evaluate the role of the spins in carrier scattering and localization as well as to determine the participation ratio of the ferromagnetic phase near the metal-insulator transition. A sizable negative magnetoresistance in the regime of strong magnetic fields is assigned to the weak localization effect.
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Submitted 20 June, 2003; v1 submitted 18 June, 2003;
originally announced June 2003.
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p-Type doping of II-VI heterostructures from surface states: application to ferromagnetic Cd$_{1-x}$Mn$_x$Te quantum wells
Authors:
W. Maslana,
M. Bertolini,
H. Boukari,
P. Kossacki,
D. Ferrand,
J. A. Gaj,
S. Tatarenko,
J. Cibert
Abstract:
We present a study of p-type doping of CdTe and Cd$_{1-x}$Mn$_x$Te quantum wells from surface states. We show that this method is as efficient as usual modulation doping with nitrogen acceptors, and leads to hole densities exceeding $2 \times 10^{11}$ cm$^{-2}$. Surface doping was successfully applied to obtain carrier-induced ferromagnetism in a Cd$_{1-x}$Mn$_x$Te quantum well. The observed tem…
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We present a study of p-type doping of CdTe and Cd$_{1-x}$Mn$_x$Te quantum wells from surface states. We show that this method is as efficient as usual modulation doping with nitrogen acceptors, and leads to hole densities exceeding $2 \times 10^{11}$ cm$^{-2}$. Surface doping was successfully applied to obtain carrier-induced ferromagnetism in a Cd$_{1-x}$Mn$_x$Te quantum well. The observed temperature dependence of photoluminescence spectra, and the critical temperature, correspond well to those previously reported for ferromagnetic quantum wells doped with nitrogen.
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Submitted 4 February, 2003; v1 submitted 10 July, 2002;
originally announced July 2002.
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Light and electric field control of ferromagnetism in magnetic quantum structures
Authors:
H. Boukari,
P. Kossacki,
M. Bertolini,
D. Ferrand,
J. Cibert,
S. Tatarenko,
A. Wasiela,
J. A. Gaj,
T. Dietl
Abstract:
A strong influence of illumination and electric bias on the Curie temperature and saturation value of the magnetization is demonstrated for semiconductor structures containing a modulation-doped p-type Cd0.96Mn0.04Te quantum well placed in various built-in electric fields. It is shown that both light beam and bias voltage generate an isothermal and reversible cross-over between the paramagnetic…
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A strong influence of illumination and electric bias on the Curie temperature and saturation value of the magnetization is demonstrated for semiconductor structures containing a modulation-doped p-type Cd0.96Mn0.04Te quantum well placed in various built-in electric fields. It is shown that both light beam and bias voltage generate an isothermal and reversible cross-over between the paramagnetic and ferromagnetic phases, in the way that is predetermined by the structure design. The observed behavior is in quantitative agreement with the expectations for systems, in which ferromagnetic interactions are mediated by the weakly disordered two-dimensional hole liquid.
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Submitted 21 February, 2002; v1 submitted 27 November, 2001;
originally announced November 2001.
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Large magnetoresistance effect due to spin-injection into a non-magnetic semiconductor
Authors:
G. Schmidt,
G. Richter,
P. Grabs,
C. Gould,
D. Ferrand,
L. W. Molenkamp
Abstract:
A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the non-magnetic semiconductor and can theoretically yield a positive magnetoresistance of 100%, when the spin flip length in the non-magnetic semiconductor is sufficiently…
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A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the non-magnetic semiconductor and can theoretically yield a positive magnetoresistance of 100%, when the spin flip length in the non-magnetic semiconductor is sufficiently large. Experimentally, our devices exhibit up to 25% magnetoresistance.
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Submitted 30 August, 2001;
originally announced August 2001.
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Epitaxy and Magneto-transport properties of the diluted magnetic semiconductor p- Be(1-x)MnxTe
Authors:
L. Hansen,
D. Ferrand,
G. Richter,
M. Thierley,
V. Hock,
N. Schwarz,
G. Reuscher,
G. Schmidt,
A. Waag,
L. W. Molenkamp
Abstract:
We report on the MBE-growth and magnetotransport properties of p-type BeMnTe, a new ferromagnetic diluted magnetic semiconductor. BeMnTe thin film structures can be grown almost lattice matched to GaAs for Mn concentrations up to 10% using solid source MBE. A high p-type doping with nitrogen can be achieved by using an RF-plasma source. BeMnTe and BeTe layers have been characterized by magneto-t…
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We report on the MBE-growth and magnetotransport properties of p-type BeMnTe, a new ferromagnetic diluted magnetic semiconductor. BeMnTe thin film structures can be grown almost lattice matched to GaAs for Mn concentrations up to 10% using solid source MBE. A high p-type doping with nitrogen can be achieved by using an RF-plasma source. BeMnTe and BeTe layers have been characterized by magneto-transport measurements. At low temperatures, the BeMnTe samples exhibit a large anomalous Hall effect. A hysteresis in the anomalous Hall effect appears below 2.5K in the most heavily doped sample, which indicates the occurrence of a ferromagnetic phase.
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Submitted 31 July, 2001;
originally announced July 2001.
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Carrier-induced ferromagnetism in p-Zn1-xMnxTe
Authors:
D. Ferrand,
J. Cibert,
A. Wasiela,
C. Bourgognon,
S. Tatarenko,
G. Fishman,
T. Andrearczyk,
J. Jaroszynski,
S. Kolesnik,
T. Dietl,
B. Barbara,
D. Dufeu
Abstract:
We present a systematic study of the ferromagnetic transition induced by the holes in nitrogen doped Zn1-xMnxTe epitaxial layers, with particular emphasis on the values of the Curie-Weiss temperature as a function of the carrier and spin concentrations. The data are obtained from thorough analyses of the results of magnetization, magnetoresistance and spin-dependent Hall effect measurements. The…
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We present a systematic study of the ferromagnetic transition induced by the holes in nitrogen doped Zn1-xMnxTe epitaxial layers, with particular emphasis on the values of the Curie-Weiss temperature as a function of the carrier and spin concentrations. The data are obtained from thorough analyses of the results of magnetization, magnetoresistance and spin-dependent Hall effect measurements. The experimental findings compare favorably, without adjustable parameters, with the prediction of the Rudermann-Kittel-Kasuya-Yosida (RKKY) model or its continuous-medium limit, that is, the Zener model, provided that the presence of the competing antiferromagnetic spin-spin superexchange interaction is taken into account, and the complex structure of the valence band is properly incorporated into the calculation of the spin susceptibility of the hole liquid. In general terms, the findings demonstrate how the interplay between the ferromagnetic RKKY interaction, carrier localization, and intrinsic antiferromagnetic superexchange affects the ordering temperature and the saturation value of magnetization in magnetically and electrostatically disordered systems.
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Submitted 31 July, 2000;
originally announced July 2000.
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Carrier induced ferromagnetic interactions in p-doped Zn(1-x)MnxTe epilayers
Authors:
D. Ferrand,
J. Cibert,
C. Bourgognon,
S. Tatarenko,
A. Wasiela,
G. Fishman,
A. Bonanni,
H. Sitter,
S. Kolesnik,
J. Jaroszynski,
A. Barcz,
T. Dietl
Abstract:
p-type doping of molecular-beam-epitaxy grown layers of the diluted magnetic semiconductor Zn(1-x)MnxTe is achieved by using an active nitrogen cell. The strong interaction between the localized Mn spins and the holes deeply modifies the transport properties (metal-insulator transition, spin-dependent Hall effect). In spite of the weak localization of the carriers at low temperature, the holes c…
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p-type doping of molecular-beam-epitaxy grown layers of the diluted magnetic semiconductor Zn(1-x)MnxTe is achieved by using an active nitrogen cell. The strong interaction between the localized Mn spins and the holes deeply modifies the transport properties (metal-insulator transition, spin-dependent Hall effect). In spite of the weak localization of the carriers at low temperature, the holes clearly induce a ferromagnetic interaction between the localized spins, which is discussed as a function of Mn content and hole concentration.
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Submitted 8 October, 1999;
originally announced October 1999.
