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Anomalous twin boundaries in 2D materials
Authors:
A. P. Rooney,
Z. Li,
W. Zhao,
A. Gholinia,
A. Kosikov,
G. Auton,
F. Ding,
R. V. Gorbachev,
R. J. Young,
S. J Haigh
Abstract:
The high mechanical strength and excellent flexibility of 2D materials such as graphene are some of their most important properties [1]. Good flexibility is key for exploiting 2D materials in many emerging technologies, such as wearable electronics, bioelectronics, protective coatings and composites [1] and recently bending has been suggested as a route to tune electronic transport behaviour [2].…
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The high mechanical strength and excellent flexibility of 2D materials such as graphene are some of their most important properties [1]. Good flexibility is key for exploiting 2D materials in many emerging technologies, such as wearable electronics, bioelectronics, protective coatings and composites [1] and recently bending has been suggested as a route to tune electronic transport behaviour [2]. For virtually all crystalline materials macroscopic deformation is accommodated by the movement of dislocations and through the formation of twinning defects [3]; it is the geometry of the resulting microstructure that largely determines the mechanical and electronic properties. Despite this, the atomic microstructure of 2D materials after mechanical deformation has not been widely investigated: only by understanding these deformed microstructures can the resulting properties be accurately predicted and controlled. In this paper we describe the different structural features that can form as a result of bending in van der Waals (vdW) crystals of 2D materials. We show that twin boundaries, an important class of crystal defect, are delocalised by several nm and not atomically sharp as has been assumed for over half a century [4]. In addition, we demonstrate that different classes of microstructure are present in the deformed material and can be predicted from just the atomic structure, bend angle, and flake thickness. We anticipate that this new knowledge of the deformation structure for 2D materials will provide foundations for tailoring transport behaviour[2], mechanical properties, liquid-phase [5,6] and scotch-tape exfoliation [7,8], and crystal growth.
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Submitted 1 September, 2018;
originally announced September 2018.
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WSe2 light-emitting tunneling transistors with enhanced brightness at room temperature
Authors:
F. Withers,
O. Del Pozo-Zamudio,
S. Schwarz,
S. Dufferwiel,
P. M. Walker,
T. Godde,
A. P. Rooney,
A. Gholinia,
C. R. Woods,
P. Blake,
S. J. Haigh,
K. Watanabe,
T. Taniguchi,
I. L. Aleiner,
A. K. Geim,
V. I. Falko,
A. I. Tartakovskii,
K. S. Novoselov
Abstract:
Monolayers of molybdenum and tungsten dichalcogenides are direct bandgap semiconductors, which makes them promising for opto-electronic applications. In particular, van der Waals heterostructures consisting of monolayers of MoS2 sandwiched between atomically thin hexagonal boron nitride (hBN) and graphene electrodes allows one to obtain light emitting quantum wells (LEQWs) with low-temperature ext…
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Monolayers of molybdenum and tungsten dichalcogenides are direct bandgap semiconductors, which makes them promising for opto-electronic applications. In particular, van der Waals heterostructures consisting of monolayers of MoS2 sandwiched between atomically thin hexagonal boron nitride (hBN) and graphene electrodes allows one to obtain light emitting quantum wells (LEQWs) with low-temperature external quantum efficiency (EQE) of 1%. However, the EQE of MoS2 and MoSe2-based LEQWs shows behavior common for many other materials: it decreases fast from cryogenic conditions to room temperature, undermining their practical applications. Here we compare MoSe2 and WSe2 LEQWs. We show that the EQE of WSe2 devices grows with temperature, with room temperature EQE reaching 5%, which is 250x more than the previous best performance of MoS2 and MoSe2 quantum wells in ambient conditions. We attribute such a different temperature dependences to the inverted sign of spin-orbit splitting of conduction band states in tungsten and molybdenum dichalcogenides, which makes the lowest-energy exciton in WSe2 dark.
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Submitted 19 November, 2015;
originally announced November 2015.
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Light-emitting diodes by bandstructure engineering in van der Waals heterostructures
Authors:
F. Withers,
O. Del Pozo-Zamudio,
A. Mishchenko,
A. P. Rooney,
A. Gholinia,
K. Watanabe,
T. Taniguchi,
S. J. Haigh,
A. K. Geim,
A. I. Tartakovskii,
K. S. Novoselov
Abstract:
The advent of graphene and related 2D materials has recently led to a new technology: heterostructures based on these atomically thin crystals. The paradigm proved itself extremely versatile and led to rapid demonstration of tunnelling diodes with negative differential resistance, tunnelling transistors5, photovoltaic devices, etc. Here we take the complexity and functionality of such van der Waal…
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The advent of graphene and related 2D materials has recently led to a new technology: heterostructures based on these atomically thin crystals. The paradigm proved itself extremely versatile and led to rapid demonstration of tunnelling diodes with negative differential resistance, tunnelling transistors5, photovoltaic devices, etc. Here we take the complexity and functionality of such van der Waals heterostructures to the next level by introducing quantum wells (QWs) engineered with one atomic plane precision. We describe light emitting diodes (LEDs) made by stacking up metallic graphene, insulating hexagonal boron nitride (hBN) and various semiconducting monolayers into complex but carefully designed sequences. Our first devices already exhibit extrinsic quantum efficiency of nearly 10% and the emission can be tuned over a wide range of frequencies by appropriately choosing and combining 2D semiconductors (monolayers of transition metal dichalcogenides). By preparing the heterostructures on elastic and transparent substrates, we show that they can also provide the basis for flexible and semi-transparent electronics. The range of functionalities for the demonstrated heterostructures is expected to grow further with increasing the number of available 2D crystals and improving their electronic quality.
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Submitted 24 December, 2014;
originally announced December 2014.
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Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals
Authors:
A. V. Kretinin,
Y. Cao,
J. S. Tu,
G. L. Yu,
R. Jalil,
K. S. Novoselov,
S. J. Haigh,
A. Gholinia,
A. Mishchenko,
M. Lozada,
T. Georgiou,
C. R. Woods,
F. Withers,
P. Blake,
G. Eda,
A. Wirsig,
C. Hucho,
K. Watanabe,
T. Taniguchi,
A. K. Geim,
R. V. Gorbachev
Abstract:
Hexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micron-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here we report on our search for alternative substrates. The devices fabricated by encapsulating graphene with molybdenum or tungsten disulphides and hBN are found t…
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Hexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micron-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here we report on our search for alternative substrates. The devices fabricated by encapsulating graphene with molybdenum or tungsten disulphides and hBN are found to exhibit consistently high carrier mobilities of about 60,000 cm$^{2}$V$^{-1}$s$^{-1}$. In contrast, encapsulation with atomically flat layered oxides such as mica, bismuth strontium calcium copper oxide and vanadium pentoxide results in exceptionally low quality of graphene devices with mobilities of ~ 1,000 cm$^{2}$ V$^{-1}$s$^{-1}$. We attribute the difference mainly to self-cleansing that takes place at interfaces between graphene, hBN and transition metal dichalcogenides. Surface contamination assembles into large pockets allowing the rest of the interface to become atomically clean. The cleansing process does not occur for graphene on atomically flat oxide substrates.
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Submitted 24 May, 2014; v1 submitted 20 March, 2014;
originally announced March 2014.
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Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
Authors:
Thanasis Georgiou,
Rashid Jalil,
Branson D. Belle,
Liam Britnell,
Roman V. Gorbachev,
Sergey V. Morozov,
Yong-Jin Kim,
Ali Gholinia,
Sarah J. Haigh,
Oleg Makarovsky,
Laurence Eaves,
Leonid A. Ponomarenko,
Andre K. Geim,
Kostya S. Novoselov,
Artem Mishchenko
Abstract:
The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the creation of heterostructures based on graphene and other two-dimensional (2D) crystals, which can be assembled in 3D stacks with atomic layer precision. These layered structures have already led to a range of fascinating ph…
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The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the creation of heterostructures based on graphene and other two-dimensional (2D) crystals, which can be assembled in 3D stacks with atomic layer precision. These layered structures have already led to a range of fascinating physical phenomena, and also have been used in demonstrating a prototype field effect tunnelling transistor - a candidate for post-CMOS technology. The range of possible materials which could be incorporated into such stacks is very large. Indeed, there are many other materials where layers are linked by weak van der Waals forces, which can be exfoliated and combined together to create novel highly-tailored heterostructures. Here we describe a new generation of field effect vertical tunnelling transistors where 2D tungsten disulphide serves as an atomically thin barrier between two layers of either mechanically exfoliated or CVD-grown graphene. Our devices have unprecedented current modulation exceeding one million at room temperature and can also operate on transparent and flexible substrates.
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Submitted 21 November, 2012;
originally announced November 2012.
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Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices
Authors:
S. J. Haigh,
A. Gholinia,
R. Jalil,
S. Romani,
L. Britnell,
D. C. Elias,
K. S. Novoselov,
L. A. Ponomarenko,
A. K. Geim,
R. Gorbachev
Abstract:
By stacking various two-dimensional (2D) atomic crystals [1] on top of each other, it is possible to create multilayer heterostructures and devices with designed electronic properties [2-5]. However, various adsorbates become trapped between layers during their assembly, and this not only affects the resulting quality but also prevents the formation of a true artificial layered crystal upheld by v…
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By stacking various two-dimensional (2D) atomic crystals [1] on top of each other, it is possible to create multilayer heterostructures and devices with designed electronic properties [2-5]. However, various adsorbates become trapped between layers during their assembly, and this not only affects the resulting quality but also prevents the formation of a true artificial layered crystal upheld by van der Waals interaction, creating instead a laminate glued together by contamination. Transmission electron microscopy (TEM) has shown that graphene and boron nitride monolayers, the two best characterized 2D crystals, are densely covered with hydrocarbons (even after thermal annealing in high vacuum) and exhibit only small clean patches suitable for atomic resolution imaging [6-10]. This observation seems detrimental for any realistic prospect of creating van der Waals materials and heterostructures with atomically sharp interfaces. Here we employ cross sectional TEM to take a side view of several graphene-boron nitride heterostructures. We find that the trapped hydrocarbons segregate into isolated pockets, leaving the interfaces atomically clean. Moreover, we observe a clear correlation between interface roughness and the electronic quality of encapsulated graphene. This work proves the concept of heterostructures assembled with atomic layer precision and provides their first TEM images.
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Submitted 4 September, 2012; v1 submitted 28 June, 2012;
originally announced June 2012.
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Graphene bubbles with controllable curvature
Authors:
T. Georgiou,
L. Britnell,
P. Blake,
R. V. Gorbachev,
A. Gholinia,
A. K. Geim,
C. Casiraghi,
K. S. Novoselov
Abstract:
Raised above the substrate and elastically deformed areas of graphene in the form of bubbles are found on different substrates. They come in a variety of shapes, including those which allow strong modification of the electronic properties of graphene. We show that the shape of the bubble can be controlled by an external electric field. This effect can be used to make graphene-based adaptive focus…
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Raised above the substrate and elastically deformed areas of graphene in the form of bubbles are found on different substrates. They come in a variety of shapes, including those which allow strong modification of the electronic properties of graphene. We show that the shape of the bubble can be controlled by an external electric field. This effect can be used to make graphene-based adaptive focus lenses.
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Submitted 25 August, 2011; v1 submitted 8 August, 2011;
originally announced August 2011.
