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Reliable operation of Cr$_2$O$_3$:Mg/ $β$-Ga$_2$O$_3$ p-n heterojunction diodes at 600$^\circ$C
Authors:
William A. Callahan,
Kingsley Egbo,
Cheng-Wei Lee,
David Ginley,
Ryan O'Hayre,
Andriy Zakutayev
Abstract:
$β$-Ga$_2$O$_3…
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$β$-Ga$_2$O$_3$-based semiconductor heterojunctions have recently demonstrated improved performance at high voltages and elevated temperatures and are thus promising for applications in power electronic devices and harsh-environment sensors. However, the long-term reliability of these ultra-wide band gap (UWBG) semiconductor devices remains barely addressed and may be strongly influenced by chemical reactions at the p-n heterojunction interface. Here, we experimentally demonstrate operation and evaluate the reliability of Cr$_2$O$_3$:Mg/ $β$-Ga$_2$O$_3$ p-n heterojunction diodes at during extended operation at 600$^\circ$C, as well as after 30 repeated cycles between 25-550$^\circ$C. The calculated pO2-temperature phase stability diagram of the Ga-Cr-O material system predicts that Ga$_2$O$_3$ and Cr$_2$O$_3$ should remain thermodynamically stable in contact with each other over a wide range of oxygen pressures and operating temperatures. The fabricated Cr$_2$O$_3$:Mg / $β$-Ga$_2$O$_3$ p-n heterojunction diodes show room-temperature on/off ratios >10$^4$ at $\pm$5V and a breakdown voltage (V$_{Br}$) of -390V. The leakage current increases with increasing temperature up to 600$^\circ$C, which is attributed to Poole-Frenkel emission with a trap barrier height of 0.19 eV. Over the course of a 140-hour thermal soak at 600$^\circ$C, both the device turn-on voltage and on-state resistance increase from 1.08V and 5.34 m$Ω$-cm$^2$ to 1.59V and 7.1 m$Ω$-cm$^2$ respectively. This increase is attributed to the accumulation of Mg and MgO at the Cr$_2$O$_3$/Ga$_2$O$_3$ interface as observed from TOF-SIMS analysis. These findings inform future design strategies of UWBG semiconductor devices for harsh environment operation and underscore the need for further reliability assessments for $β$-Ga$_2$O$_3$ based devices.
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Submitted 13 January, 2024;
originally announced January 2024.
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Ultrathin Stable Ohmic Contacts for High-Temperature Operation of $β$-Ga$_2$O$_3$ Devices
Authors:
William A. Callahan,
Edwin Supple,
David Ginley,
Michael Sanders,
Brian P. Gorman,
Ryan O'Hayre,
Andriy Zakutayev
Abstract:
Beta gallium oxide ($β$-Ga$_2$O$_3$) shows significant promise in the high-temperature, high-power, and sensing electronics applications. However, long-term stable metallization layers for Ohmic contacts at high temperature present unique thermodynamic challenges. The current most common Ohmic contact design based on 20 nm of Ti has been repeatedly demonstrated to fail at even moderately elevated…
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Beta gallium oxide ($β$-Ga$_2$O$_3$) shows significant promise in the high-temperature, high-power, and sensing electronics applications. However, long-term stable metallization layers for Ohmic contacts at high temperature present unique thermodynamic challenges. The current most common Ohmic contact design based on 20 nm of Ti has been repeatedly demonstrated to fail at even moderately elevated temperatures (300-400$^{\circ}$C) due to a combination of non-stoichiometric Ti/Ga$_2$O$_3$ interfacial reactions and kinetically favored Ti diffusion processes. Here we demonstrate stable Ohmic contacts for Ga$_2$O$_3$ devices operating up to 500-600$^{\circ}$C using ultrathin Ti layers with a self-limiting interfacial reaction. The ultrathin Ti layer in the 5nm Ti / 100nm Au contact stack is designed to fully oxidize while forming an Ohmic contact, thereby limiting both thermodynamic and kinetic instability. This novel contact design strategy results in an epitaxial conductive anatase titanium oxide interface layer that enables low-resistance Ohmic contacts that are stable both under long-term continuous operation (>500 hours) at 600$^{\circ}$C in vacuum ($\leq$ 10$^{-4}$ Torr), as well as after repeated thermal cycling (15 times) between room temperature and 550$^{\circ}$C in flowing N$_2$. This stable Ohmic contact design will accelerate the development of high-temperature devices by enabling research focus to shift towards rectifying contacts and other interfacial layers.
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Submitted 4 April, 2023;
originally announced April 2023.
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Investigating the Electronic Structure of Prospective Water-splitting Oxide BaCe$_{0.25}$Mn$_{0.75}$O$_{3-δ}$ Before and After Thermal Reduction
Authors:
Subhayan Roychoudhury,
Sarah Shulda,
Anuj Goyal,
Robert Bell,
Sami Sainio,
Nicholas Strange,
James Eujin Park,
Eric N. Coker,
Stephan Lany,
David Ginley,
David Prendergast
Abstract:
BaCe$_{0.25}$Mn$_{0.75}$O$_{3-δ}$ (BCM), a non-stoichiometric oxide closely resembling a perovskite crystal structure, has recently emerged as a prospective contender for application in renewable energy harvesting by solar thermochemical hydrogen generation. Using solar energy, oxygen-vacancies can be created in BCM and the reduced crystal so obtained can, in turn, produce H2 by stripping oxygen f…
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BaCe$_{0.25}$Mn$_{0.75}$O$_{3-δ}$ (BCM), a non-stoichiometric oxide closely resembling a perovskite crystal structure, has recently emerged as a prospective contender for application in renewable energy harvesting by solar thermochemical hydrogen generation. Using solar energy, oxygen-vacancies can be created in BCM and the reduced crystal so obtained can, in turn, produce H2 by stripping oxygen from H2O. Therefore, a first step toward understanding the working mechanism and optimizing the performance of BCM, is a thorough and comparative analysis of the electronic structure of the pristine and the reduced material. In this paper, we probe the electronic structure of BCM using the combined effort of first-principles calculations and experimental O K-edge x-ray absorption spectroscopy (XAS). The computed projected density-of-states (PDOS) and orbital-plots are used to propose a simplified model for orbital-mixing between the oxygen and the ligand atoms. With the help of state-of-the-art simulations, we are able to find the origins of the XAS peaks and to categorize them on the basis of contribution from Ce and Mn. For the reduced crystal, the calculations show that, as a consequence of dielectric screening, the change in electron-density resulting from the reduction is strongly localized around the oxygen vacancy. Our experimental studies reveal a marked lowering of the first O K-edge peak in the reduced crystal which is shown to result from a diminished O-2p contribution to the frontier unoccupied orbitals, in accordance with the tight-binding scheme. Our study paves the way for investigation of the working-mechanism of BCM and for computational and experimental efforts aimed at design and discovery of efficient water-splitting oxides.
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Submitted 27 September, 2022;
originally announced September 2022.
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Synthesis of a mixed-valent tin nitride and considerations of its possible crystal structures
Authors:
Christopher M. Caskey,
Aaron Holder,
Sarah Shulda,
Steve Christensen,
David Diercks,
Craig P. Schwartz,
David Biagioni,
Dennis Nordlund,
Alon Kukliansky,
Amir Natan,
David Prendergast,
Bernardo Orvananos,
Wenhao Sun,
Xiuwen Zhang,
Gerbrand Ceder,
William Tumas,
David S. Ginley,
John D. Perkins,
Vladan Stevanovic,
Svitlana Pylypenko,
Stephan Lany,
Ryan M. Richards,
Andriy Zakutayev
Abstract:
Recent advances in theoretical structure prediction methods and high-throughput computational techniques are revolutionizing experimental discovery of the thermodynamically stable inorganic materials. Metastable materials represent a new frontier for studies, since even simple binary non ground state compounds of common elements may be awaiting discovery. However, there are significant research ch…
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Recent advances in theoretical structure prediction methods and high-throughput computational techniques are revolutionizing experimental discovery of the thermodynamically stable inorganic materials. Metastable materials represent a new frontier for studies, since even simple binary non ground state compounds of common elements may be awaiting discovery. However, there are significant research challenges related to non-equilibrium thin film synthesis and crystal structure predictions, such as small strained crystals in the experimental samples and energy minimization based theoretical algorithms. Here we report on experimental synthesis and characterization, as well as theoretical first-principles calculations of a previously unreported mixed-valent binary tin nitride. Thin film experiments indicate that this novel material is N-deficient SnN with tin in the mixed II/IV valence state and a small low-symmetry unit cell. Theoretical calculations suggest that the most likely crystal structure has the space group 2 (SG2) related to the distorted delafossite (SG166), which is nearly 0.1 eV/atom above the ground state SnN polymorph. This observation is rationalized by the structural similarity of the SnN distorted delafossite to the chemically related Sn3N4 spinel compound, which provides a fresh scientific insight into the reasons for growth of polymorphs of the metastable material. In addition to reporting on the discovery of the simple binary SnN compound, this paper illustrates a possible way of combining a wide range of advanced characterization techniques with the first-principle property calculation methods, to elucidate the most likely crystal structure of the previously unreported metastable materials.
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Submitted 18 January, 2016;
originally announced January 2016.
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Identifying defect-tolerant semiconductors with high minority carrier lifetimes: Beyond hybrid lead halide perovskites
Authors:
Riley E. Brandt,
Vladan Stevanović,
David S. Ginley,
Tonio Buonassisi
Abstract:
The emergence of methyl-ammonium lead halide (MAPbX3) perovskites motivates the identification of unique properties giving rise to exceptional bulk transport properties, and identifying future materials with similar properties. Here, we propose that this "defect tolerance" emerges from fundamental electronic structure properties, including the orbital character of the conduction and valence band e…
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The emergence of methyl-ammonium lead halide (MAPbX3) perovskites motivates the identification of unique properties giving rise to exceptional bulk transport properties, and identifying future materials with similar properties. Here, we propose that this "defect tolerance" emerges from fundamental electronic structure properties, including the orbital character of the conduction and valence band extrema, the effective masses, and the static dielectric constant. We use MaterialsProject.org searches and detailed electronic-structure calculations to demonstrate these properties in other materials than MAPbX3. This framework of materials discovery may be applied more broadly, to accelerate discovery of new semiconductors based on emerging understanding of recent successes.
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Submitted 21 May, 2015; v1 submitted 8 April, 2015;
originally announced April 2015.
