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Ultrafast evolution and transient phases of the prototype out-of-equilibrium Mott-Hubbard material V2O3
Authors:
G. Lantz,
B Mansart,
D. Grieger,
D. Boschetto,
N. Nilforoushan,
E. Papalazarou,
N. Moisan,
L. Perfetti,
V. L. R. Jacques,
D. Le Bolloc'h,
C. Laulhé,
S. Ravy,
J. -P. Rueff,
T. E. Glover,
M. P. Hertlein,
Z. Hussain,
S. Song,
M. Chollet,
M. Fabrizio,
M. Marsi
Abstract:
The study of photoexcited strongly correlated materials is attracting growing interest since their rich phase diagram often translates into an equally rich out-of-equilibrium behavior, including non-thermal phases and photoinduced phase transitions. With femtosecond optical pulses, electronic and lattice degrees of freedom can be transiently decoupled, giving the opportunity of stabilizing new sta…
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The study of photoexcited strongly correlated materials is attracting growing interest since their rich phase diagram often translates into an equally rich out-of-equilibrium behavior, including non-thermal phases and photoinduced phase transitions. With femtosecond optical pulses, electronic and lattice degrees of freedom can be transiently decoupled, giving the opportunity of stabilizing new states of matter inaccessible by quasi-adiabatic pathways. Here we present a study of the ultrafast non-equilibrium evolution of the prototype Mott-Hubbard material V2O3, which presents a transient non-thermal phase developing immediately after photoexcitation and lasting few picoseconds. For both the insulating and the metallic phase, the formation of the transient configuration is triggered by the excitation of electrons into the bonding a1g orbital, and is then stabilized by a lattice distortion characterized by a marked hardening of the A1g coherent phonon. This configuration is in stark contrast with the thermally accessible ones - the A1g phonon frequency actually softens when heating the material. Our results show the importance of selective electron-lattice interplay for the ultrafast control of material parameters, and are of particular relevance for the optical manipulation of strongly correlated systems, whose electronic and structural properties are often strongly intertwinned.
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Submitted 31 August, 2016;
originally announced August 2016.
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Low-temperature magnetic ordering and structural distortions in Vanadium Sesquioxide (V$_2$O$_3$)
Authors:
Daniel Grieger,
Michele Fabrizio
Abstract:
Vanadium Sesquioxide (V$_2$O$_3$) is an antiferromagnetic insulator below $T_{\mathrm N}\approx$ 155 K. The magnetic order is not of C- or G-type as one would infer from the bipartite character of the hexagonal basal plane in the high-temperature corundum structure. In fact, the Néel transition is accompanied by a monoclinic distortion that makes one bond of the honeycomb plane inequivalent from t…
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Vanadium Sesquioxide (V$_2$O$_3$) is an antiferromagnetic insulator below $T_{\mathrm N}\approx$ 155 K. The magnetic order is not of C- or G-type as one would infer from the bipartite character of the hexagonal basal plane in the high-temperature corundum structure. In fact, the Néel transition is accompanied by a monoclinic distortion that makes one bond of the honeycomb plane inequivalent from the other two, thus justifying a magnetic structure with one ferromagnetic bond and two antiferromagnetic ones. We show here that the magnetic ordering, the accompanying monoclinic structural distortion, the magnetic anisotropy and also the recently discovered high-pressure monoclinic phase, can all be accurately described by conventional electronic structure calculations within GGA and GGA+U. Our results are in line with DMFT calculations for the paramagnetic phase, which predict that the insulating character is driven by a correlation-enhanced crystal field splitting between $e^π_g$ and $a_{1g}$ orbitals that pushes the latter above the chemical potential. We find that the $a_{1g}$ orbital, although almost empty in the insulating phase, is actually responsible for the unusual magnetic order as it leads to magnetic frustration whose effect is similar to a next-nearest-neighbor exchange in a Heisenberg model on a honeycomb lattice.
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Submitted 16 February, 2015;
originally announced February 2015.
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How chromium doping affects the correlated electronic structure of V2O3
Authors:
Daniel Grieger,
Frank Lechermann
Abstract:
The archetypical strongly correlated Mott-phenomena compound V2O3 is known to show a paramagnetic metal-insulator transition driven by doping with chromium atoms and/or (negative) pressure. Via charge self-consistent density-functional theory+dynamical mean-field theory calculations we demonstrate that these two routes cannot be understood as equivalent. To this end, the explicit description of Cr…
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The archetypical strongly correlated Mott-phenomena compound V2O3 is known to show a paramagnetic metal-insulator transition driven by doping with chromium atoms and/or (negative) pressure. Via charge self-consistent density-functional theory+dynamical mean-field theory calculations we demonstrate that these two routes cannot be understood as equivalent. To this end, the explicit description of Cr-doped V2O3 by means of supercell calculations and the virtual crystal approximation is performed. Already the sole introduction of chromium's additional electron to the system is shown to modify the overall correlated electronic structure substantially. Correlation-induced charge transfers between Cr and the remaining V ions occur and the transition-metal orbital polarization is increased by the electron doping, in close agreement with experimental findings.
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Submitted 7 April, 2014;
originally announced April 2014.
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Electron correlation and magnetism at the LaAlO$_3$/SrTiO$_3$ interface: A DFT+DMFT investigation
Authors:
Frank Lechermann,
Lewin Boehnke,
Daniel Grieger,
Christoph Piefke
Abstract:
We shed light on the interplay between structure and many-body effects relevant for itinerant ferromagnetism in LaAlO$_3$/SrTiO$_3$ heterostructures. The realistic correlated electronic structure is studied by means of the (spin-polarized) charge self-consistent combination of density functional theory (DFT) with dynamical mean-field theory (DMFT) beyond the realm of static correlation effects. Th…
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We shed light on the interplay between structure and many-body effects relevant for itinerant ferromagnetism in LaAlO$_3$/SrTiO$_3$ heterostructures. The realistic correlated electronic structure is studied by means of the (spin-polarized) charge self-consistent combination of density functional theory (DFT) with dynamical mean-field theory (DMFT) beyond the realm of static correlation effects. Though many-body behavior is also active in the defect-free interface, a ferromagnetic instability occurs only with oxygen vacancies. A minimal Ti two-orbital $e_g$-$t_{2g}$ description for the correlated subspace is derived. Magnetic order affected by quantum fluctuations builds up from effective double exchange between nearly-localized $e_g$ and mobile $xy$ electrons.
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Submitted 26 August, 2014; v1 submitted 23 January, 2014;
originally announced January 2014.
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Formation of orbital-selective electron states in LaTiO$_3$/SrTiO$_3$ superlattices
Authors:
Frank Lechermann,
Lewin Boehnke,
Daniel Grieger
Abstract:
The interface electronic structure of correlated LaTiO$_3$/SrTiO$_3$ superlattices is investigated by means of the charge self-consistent combination of the local density approximation (LDA) to density functional theory (DFT) with dynamical mean-field theory (DMFT). Utilizing a pseudopotential technique together with a continuous-time quantum Monte-Carlo approach, the resulting complex multiorbita…
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The interface electronic structure of correlated LaTiO$_3$/SrTiO$_3$ superlattices is investigated by means of the charge self-consistent combination of the local density approximation (LDA) to density functional theory (DFT) with dynamical mean-field theory (DMFT). Utilizing a pseudopotential technique together with a continuous-time quantum Monte-Carlo approach, the resulting complex multiorbital electronic states are addressed in a coherent fashion beyond static mean-field. General structural relaxations are taken into account on the LDA level and cooperate with the driving forces from strong electronic correlations. This alliance leads to an Ti($3d_{xy}$) dominated low-energy quasiparticle peak and a lower Hubbard band in line with photoemission studies. Furthermore correlation effects close to the band-insulating bulk SrTiO$_3$ limit as well as the Mott-insulating bulk LaTiO$_3$ limit are studied via realistic single-layer embeddings.
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Submitted 6 June, 2013; v1 submitted 7 April, 2013;
originally announced April 2013.
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Approaching finite-temperature phase diagrams of strongly correlated materials: a case study for V2O3
Authors:
Daniel Grieger,
Christoph Piefke,
Oleg E. Peil,
Frank Lechermann
Abstract:
Examining phase stabilities and phase equilibria in strongly correlated materials asks for a next level in the many-body extensions to the local-density approximation (LDA) beyond mainly spectroscopic assessments. Here we put the charge-self-consistent LDA+dynamical mean-field theory (DMFT) methodology based on projected local orbitals for the LDA+DMFT interface and a tailored pseudopotential fram…
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Examining phase stabilities and phase equilibria in strongly correlated materials asks for a next level in the many-body extensions to the local-density approximation (LDA) beyond mainly spectroscopic assessments. Here we put the charge-self-consistent LDA+dynamical mean-field theory (DMFT) methodology based on projected local orbitals for the LDA+DMFT interface and a tailored pseudopotential framework into action in order to address such thermodynamics of realistic strongly correlated systems. Namely a case study for the electronic phase diagram of the well-known prototype Mott-phenomena system V$_2$O$_3$ at higher temperatures is presented. We are able to describe the first-order metal-to-insulator transitions with negative pressure and temperature from the self-consistent computation of the correlated total energy in line with experimental findings.
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Submitted 23 July, 2012; v1 submitted 23 March, 2012;
originally announced March 2012.
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Realistic modeling of the electronic structure and the effect of correlations for Sn/Si(111) and Sn/Ge(111) surfaces
Authors:
Sergej Schuwalow,
Daniel Grieger,
Frank Lechermann
Abstract:
The correlated electronic structure of the submonolayer surface systems Sn/Si(111) and Sn/Ge(111) is investigated by density-functional theory (DFT) and its combination with explicit many-body methods. Namely, the dynamical mean-field theory and the slave-boson mean-field theory are utilized for the study of the intriguing interplay between structure, bonding and electronic correlation. In this re…
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The correlated electronic structure of the submonolayer surface systems Sn/Si(111) and Sn/Ge(111) is investigated by density-functional theory (DFT) and its combination with explicit many-body methods. Namely, the dynamical mean-field theory and the slave-boson mean-field theory are utilized for the study of the intriguing interplay between structure, bonding and electronic correlation. In this respect, explicit low-energy one- and four($sp^2$-like)-band models are derived using maximally-localized Wannier(-like) functions. In view of the possible low-dimensional magnetism in the Sn submonolayers we compare different types of magnetic orders and indeed find a 120$^\circ$ antiferromagnetic ordering to be stable in the ground state. With single-site methods and cellular-cluster extensions the influence of a finite Hubbard $U$ on the surface states in a planar and a reconstructed structural geometry is furthermore elaborated.
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Submitted 16 March, 2010;
originally announced March 2010.
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Electronic correlations in vanadium chalcogenides: BaVSe3 versus BaVS3
Authors:
Daniel Grieger,
Lewin Boehnke,
Frank Lechermann
Abstract:
Albeit structurally and electronically very similar, at low temperature the quasi-one-dimensional vanadium sulfide BaVS3 shows a metal-to-insulator transition via the appearance of a charge-density-wave state, while BaVSe3 apparently remains metallic down to zero temperature. This different behavior upon cooling is studied by means of density functional theory and its combination with the dynamica…
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Albeit structurally and electronically very similar, at low temperature the quasi-one-dimensional vanadium sulfide BaVS3 shows a metal-to-insulator transition via the appearance of a charge-density-wave state, while BaVSe3 apparently remains metallic down to zero temperature. This different behavior upon cooling is studied by means of density functional theory and its combination with the dynamical mean-field theory and the rotationally-invariant slave-boson method. We reveal several subtle differences between these chalcogenides that provide indications for the deviant behavior of BaVSe3 at low temperature. In this regard, a smaller Hubbard U in line with an increased relevance of the Hund's exchange J plays a vital role.
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Submitted 22 June, 2010; v1 submitted 15 February, 2010;
originally announced February 2010.