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Statistical study and parallelisation of multiplexed single-electron sources
Authors:
S. Norimoto,
P. See,
N. Schoinas,
I. Rungger,
T. O. Boykin II,
M. D. Stewart Jr,
J. P. Griffiths,
C. Chen,
D. A. Ritchie,
M. Kataoka
Abstract:
Increasing electric current from a single-electron source is a main challenge in an effort to establish the standard of the ampere defined by the fixed value of the elementary charge $e$ and operation frequency $f$. While the current scales with $f$, due to an operation frequency limit for maintaining accurate single-electron transfer, parallelisation of singleelectron sources is expected to be a…
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Increasing electric current from a single-electron source is a main challenge in an effort to establish the standard of the ampere defined by the fixed value of the elementary charge $e$ and operation frequency $f$. While the current scales with $f$, due to an operation frequency limit for maintaining accurate single-electron transfer, parallelisation of singleelectron sources is expected to be a more practical solution to increase the generated electric current $I = Nef$, where $N$ is a number of parallelised devices. One way to parallelise single-electron sources without increasing the complexity in device operation is to use a common gate. Such a scheme will require each device to have the same operation parameters for single-electron transfer. In order to investigate this possibility, we study the statistics for operation gate voltages using single-electron sources embedded in a multiplexer circuit. The multiplexer circuit allows us to measure 64 single-electron sources individually in a single cooldown. We also demonstrate the parallelisation of three single-electron sources and observe the generated current enhanced by a factor of three.
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Submitted 8 July, 2024;
originally announced July 2024.
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Photon emission by hot electron injection across a lateral \textit{pn} junction
Authors:
S. Norimoto,
R. Saxena,
P. See,
A. Nasir,
J. P. Griffiths,
C. Chen,
D. A. Ritchie,
M. Kataoka
Abstract:
We demonstrate a method to generate photons by injecting hot electrons into a {\it pn} junction within a \ce{GaAs/AlGaAs} heterostructure. Hot electrons are generated by biasing across a mesoscopic potential in {\it n}-type region and travel toward {\it p}-type region through quantum Hall edge channel in the presence of magnetic field perpendicular to the substrate. The {\it p}-type region is crea…
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We demonstrate a method to generate photons by injecting hot electrons into a {\it pn} junction within a \ce{GaAs/AlGaAs} heterostructure. Hot electrons are generated by biasing across a mesoscopic potential in {\it n}-type region and travel toward {\it p}-type region through quantum Hall edge channel in the presence of magnetic field perpendicular to the substrate. The {\it p}-type region is created several microns away from the hot electron emitter by inducing interfacial charges using a surface gate. The energy relaxation of the hot electrons is suppressed by separating the orbitals before and after longitudinal-optical (LO) phonon emission. This technique enables the hot electrons to reach the {\it p}-type region and to recombine with induced holes followed by photon emissions. Hot electron-induced hole recombination is confirmed by a peak around \qty{810}{nm} in an optical spectrum that corresponds to excitonic recombination in a \ce{GaAs} quantum well. An asymmetric structure observed in the optical spectrum as a function of the magnetic field originates from the chiral transport of the hot electrons in the Hall edge channel. We propose the combination of our technology and on-demand single-electron source would enable the development of an on-demand single photon source that is an essential building block to drive an optical quantum circuit and to transfer quantum information for a long distance.
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Submitted 6 June, 2024;
originally announced June 2024.
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Fast characterization of multiplexed single-electron pumps with machine learning
Authors:
N. Schoinas,
Y. Rath,
S. Norimoto,
W. Xie,
P. See,
J. P. Griffiths,
C. Chen,
D. A. Ritchie,
M. Kataoka,
A. Rossi,
I. Rungger
Abstract:
We present an efficient machine learning based automated framework for the fast tuning of single-electron pump devices into current quantization regimes. It uses a sparse measurement approach based on an iterative active learning algorithm to take targeted measurements in the gate voltage parameter space. When compared to conventional parameter scans, our automated framework allows us to decrease…
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We present an efficient machine learning based automated framework for the fast tuning of single-electron pump devices into current quantization regimes. It uses a sparse measurement approach based on an iterative active learning algorithm to take targeted measurements in the gate voltage parameter space. When compared to conventional parameter scans, our automated framework allows us to decrease the number of measurement points by about an order of magnitude. This corresponds to an eight-fold decrease in the time required to determine quantization errors, which are estimated via an exponential extrapolation of the first current plateau embedded into the algorithm. We show the robustness of the framework by characterizing 28 individual devices arranged in a GaAs/AlGaAs multiplexer array, which we use to identify a subset of devices suitable for parallel operation at communal gate voltages. The method opens up the possibility to efficiently scale the characterization of such multiplexed devices to a large number of pumps.
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Submitted 31 May, 2024;
originally announced May 2024.
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Statistical evaluation of 571 GaAs quantum point contact transistors showing the 0.7 anomaly in quantized conductance using millikelvin cryogenic on-chip multiplexing
Authors:
Pengcheng Ma,
Kaveh Delfanazari,
Reuben K. Puddy,
Jiahui Li,
Moda Cao,
Teng Yi,
Jonathan P. Griffiths,
Harvey E. Beere,
David A. Ritchie,
Michael J. Kelly,
Charles G. Smith
Abstract:
The mass production and the practical number of cryogenic quantum devices producible in a single chip are limited to the number of electrical contact pads and wiring of the cryostat or dilution refrigerator. It is, therefore, beneficial to contrast the measurements of hundreds of devices fabricated in a single chip in one cooldown process to promote the scalability, integrability, reliability, and…
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The mass production and the practical number of cryogenic quantum devices producible in a single chip are limited to the number of electrical contact pads and wiring of the cryostat or dilution refrigerator. It is, therefore, beneficial to contrast the measurements of hundreds of devices fabricated in a single chip in one cooldown process to promote the scalability, integrability, reliability, and reproducibility of quantum devices and to save evaluation time, cost and energy. Here, we use a cryogenic on-chip multiplexer architecture and investigate the statistics of the 0.7 anomaly observed on the first three plateaus of the quantized conductance of semiconductor quantum point contact (QPC) transistors. Our single chips contain 256 split gate field effect QPC transistors (QFET) each, with two 16-branch multiplexed source-drain and gate pads, allowing individual transistors to be selected, addressed and controlled through an electrostatic gate voltage process. A total of 1280 quantum transistors with nano-scale dimensions are patterned in 5 different chips of GaAs heterostructures. From the measurements of 571 functioning QPCs taken at temperatures T= 1.4 K and T= 40 mK, it is found that the spontaneous polarisation model and Kondo effect do not fit our results. Furthermore, some of the features in our data largely agreed with van Hove model with short-range interactions. Our approach provides further insight into the quantum mechanical properties and microscopic origin of the 0.7 anomaly in QPCs, paving the way for the development of semiconducting quantum circuits and integrated cryogenic electronics, for scalable quantum logic control, readout, synthesis, and processing applications.
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Submitted 10 April, 2024;
originally announced April 2024.
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Resolving Length Scale Dependent Transient Disorder Through an Ultrafast Phase Transition
Authors:
Jack Griffiths,
Ana Flávia Suzana,
Longlong Wu,
Samuel D. Marks,
Vincent Esposito,
Sébastien Boutet,
Paul G. Evans,
J. F. Mitchell,
Mark P. M. Dean,
David A. Keen,
Ian Robinson,
Simon J. L. Billinge,
Emil S. Bozin
Abstract:
Material functionality can be strongly determined by structure extending only over nanoscale distances. The pair distribution function presents an opportunity to shift structural studies beyond idealized crystal models and investigate structure over varying length scales. Applying this method with ultrafast time resolution has the potential to similarly disrupt the study of structural dynamics and…
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Material functionality can be strongly determined by structure extending only over nanoscale distances. The pair distribution function presents an opportunity to shift structural studies beyond idealized crystal models and investigate structure over varying length scales. Applying this method with ultrafast time resolution has the potential to similarly disrupt the study of structural dynamics and phase transitions. Here, we demonstrate such a measurement of CuIr$_{2}$S$_{4}$ optically pumped from its low temperature Ir-dimerized phase. Dimers are optically suppressed without spatial correlation, generating a structure whose level of disorder depends strongly on length scale. The re-development of structural ordering over tens of picoseconds is directly tracked over both space and time as a transient state is approached. This measurement demonstrates both the crucial role of local structure and disorder in non-equilibrium processes and the feasibility of accessing this information with state-of-the-art XFEL facilities.
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Submitted 12 April, 2024; v1 submitted 5 October, 2023;
originally announced October 2023.
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Time-resolved Coulomb collision of single electrons
Authors:
J. D. Fletcher,
W. Park,
S. Ryu,
P. See,
J. P. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie,
H. -S. Sim,
M. Kataoka
Abstract:
Precise control over interactions between ballistic electrons will enable us to exploit Coulomb interactions in novel ways, to develop high-speed sensing, to reach a non-linear regime in electron quantum optics and to realise schemes for fundamental two-qubit operations on flying electrons. Time-resolved collisions between electrons have been used to probe the indistinguishability, Wigner function…
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Precise control over interactions between ballistic electrons will enable us to exploit Coulomb interactions in novel ways, to develop high-speed sensing, to reach a non-linear regime in electron quantum optics and to realise schemes for fundamental two-qubit operations on flying electrons. Time-resolved collisions between electrons have been used to probe the indistinguishability, Wigner function and decoherence of single electron wavepackets. Due to the effects of screening, none of these experiments were performed in a regime where Coulomb interactions were particularly strong. Here we explore the Coulomb collision of two high energy electrons in counter-propagating ballistic edge states. We show that, in this kind of unscreened device, the partitioning probabilities at different electron arrival times and barrier height are shaped by Coulomb repulsion between the electrons. This prevents the wavepacket overlap required for the manifestation of fermionic exchange statistics but suggests a new class of devices for studying and manipulating interactions of ballistic single electrons.
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Submitted 7 October, 2022;
originally announced October 2022.
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Decoupling of the many-body effects from the electron mass in GaAs by means of reduced dimensionality
Authors:
P. M. T. Vianez,
Y. Jin,
W. K. Tan,
Q. Liu,
J. P. Griffiths,
I. Farrer,
D. A. Ritchie,
O. Tsyplyatyev,
C. J. B. Ford
Abstract:
Determining the (bare) electron mass $m_0$ in crystals is often hindered by many-body effects since Fermi-liquid physics renormalises the band mass, making the observed effective mass $m^*$ depend on density. Here, we use a one-dimensional (1D) geometry to amplify the effect of interactions, forcing the electrons to form a nonlinear Luttinger liquid with separate holon and spinon bands, therefore…
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Determining the (bare) electron mass $m_0$ in crystals is often hindered by many-body effects since Fermi-liquid physics renormalises the band mass, making the observed effective mass $m^*$ depend on density. Here, we use a one-dimensional (1D) geometry to amplify the effect of interactions, forcing the electrons to form a nonlinear Luttinger liquid with separate holon and spinon bands, therefore separating the interaction effects from $m_0$. Measuring the spectral function of gated quantum wires formed in GaAs by means of magnetotunnelling spectroscopy and interpreting them using the 1D Fermi-Hubbard model, we obtain $m_0=(0.0525\pm0.0015)m_\textrm{e}$ in this material, where $m_\textrm{e}$ is the free-electron mass. By varying the density in the wires, we change the interaction parameter $r_\textrm{s}$ in the range from $\sim$1-4 and show that $m_0$ remains constant. The determined value of $m_0$ is $\sim 22$% lighter than observed in GaAs in geometries of higher dimensionality $D$ ($D>1$), consistent with the quasi-particle picture of a Fermi liquid that makes electrons heavier in the presence of interactions.
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Submitted 14 March, 2023; v1 submitted 27 October, 2021;
originally announced October 2021.
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Engineering electron wavefunctions in asymmetrically confined quasi one-dimensional structures
Authors:
S. Kumar,
M. Pepper,
H. Montagu,
D. Ritchie,
I. Farrer,
J. Griffiths,
G. Jones
Abstract:
We present results on electron transport in quasi-one dimensional (1D) quantum wires in GaAs/AlGaAs heterostructures obtained using an asymmetric confinement potential. The variation of the energy levels of the spatially quantized states is followed from strong confinement through weak confinement to the onset of two-dimensionality. An anticrossing of the initial ground and first excited states is…
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We present results on electron transport in quasi-one dimensional (1D) quantum wires in GaAs/AlGaAs heterostructures obtained using an asymmetric confinement potential. The variation of the energy levels of the spatially quantized states is followed from strong confinement through weak confinement to the onset of two-dimensionality. An anticrossing of the initial ground and first excited states is found as the asymmetry of the potential is varied giving rise to two anticrossing events which occur on either side of symmetric confinement. We present results analysing this behaviour and showing how it can be affected by the inhomogeneity in background potential. The use of an enhanced source-drain voltage to alter the energy levels is shown to be a significant validation of the analysis by showing the formation of double rows of electrons which correlate with the anticrossing.
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Submitted 18 March, 2021;
originally announced March 2021.
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Microscopic metallic air-bridge arrays for connecting quantum devices
Authors:
Y. Jin,
M. Moreno,
P. M. T. Vianez,
W. K. Tan,
J. P. Griffiths,
I. Farrer,
D. A. Ritchie,
C. J. B. Ford
Abstract:
We present a single-exposure fabrication technique for a very large array of microscopic air-bridges using a tri-layer resist process with electron-beam lithography. The technique is capable of forming air-bridges with strong metal-metal or metal-substrate connections. This was demonstrated by its application in an electron tunnelling device consisting of 400 identical surface gates for defining q…
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We present a single-exposure fabrication technique for a very large array of microscopic air-bridges using a tri-layer resist process with electron-beam lithography. The technique is capable of forming air-bridges with strong metal-metal or metal-substrate connections. This was demonstrated by its application in an electron tunnelling device consisting of 400 identical surface gates for defining quantum wires, where the air-bridges are used as suspended connections for the surface gates. This technique enables us to create a large array of uniform one-dimensional channels that are open at both ends. In this article, we outline the details of the fabrication process, together with a study and the solution of the challenges present in the development of the technique, which includes the use of water-IPA (isopropyl alcohol) developer, calibration of resist thickness and numerical simulation of the development.
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Submitted 21 April, 2021; v1 submitted 11 February, 2021;
originally announced February 2021.
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Observing separate spin and charge Fermi seas in a strongly correlated one-dimensional conductor
Authors:
P. M. T. Vianez,
Y. Jin,
M. Moreno,
A. S. Anirban,
A. Anthore,
W. K. Tan,
J. P. Griffiths,
I. Farrer,
D. A. Ritchie,
A. J. Schofield,
O. Tsyplyatyev,
C. J. B. Ford
Abstract:
An electron is usually considered to have only one form of kinetic energy, but could it have more, for its spin and charge, by exciting other electrons? In one dimension (1D), the physics of interacting electrons is captured well at low energies by the Tomonaga-Luttinger model, yet little has been observed experimentally beyond this linear regime. Here, we report on measurements of many-body modes…
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An electron is usually considered to have only one form of kinetic energy, but could it have more, for its spin and charge, by exciting other electrons? In one dimension (1D), the physics of interacting electrons is captured well at low energies by the Tomonaga-Luttinger model, yet little has been observed experimentally beyond this linear regime. Here, we report on measurements of many-body modes in 1D gated-wires using tunnelling spectroscopy. We observe two parabolic dispersions, indicative of separate Fermi seas at high energies, associated with spin and charge excitations, together with the emergence of two additional 1D 'replica' modes that strengthen with decreasing wire length. The effective interaction strength is varied by changing the amount of 1D inter-subband screening by over 45%. Our findings demonstrate the existence of spin-charge separation in the whole energy band outside the low-energy limit of validity of the Tomonaga-Luttinger model, and also set a constraint on the validity of the newer nonlinear Tomonaga-Luttinger theory.
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Submitted 1 July, 2022; v1 submitted 10 February, 2021;
originally announced February 2021.
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Demonstration of electron focusing using electronic lenses in low-dimensional system
Authors:
Chengyu Yan,
Michael Pepper,
Patrick See,
Ian Farrer,
David Ritchie,
Jonathan Griffiths
Abstract:
We report an all-electric integrable electron focusing lens in n-type GaAs. It is shown that a pronounced focusing peak takes place when the focal point aligns with an on-chip detector. The intensity and full width half maximum (FWHM) of the focusing peak are associated with the collimation of injected electrons. To demonstrate the reported focusing lens can be a useful tool, we investigate charac…
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We report an all-electric integrable electron focusing lens in n-type GaAs. It is shown that a pronounced focusing peak takes place when the focal point aligns with an on-chip detector. The intensity and full width half maximum (FWHM) of the focusing peak are associated with the collimation of injected electrons. To demonstrate the reported focusing lens can be a useful tool, we investigate characteristic of an asymmetrically gate biased quantum point contact with the assistance of focusing lens. A correlation between the occurrence of conductance anomaly in low conductance regime and increase in FWHM of focusing peak is observed. The correlation is likely due to the electron-electron interaction. The reported electron focusing lens is essential for a more advanced electron optics device.
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Submitted 11 February, 2020;
originally announced February 2020.
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Quantised Charge Transport driven by a Surface Acoustic Wave in induced unipolar and bipolar junctions
Authors:
Yousun Chung,
Hangtian Hou,
Seok-Kyun Son,
Tzu-Kan Hsiao,
Ateeq Nasir,
Antonio Rubino,
Jonathan P. Griffiths,
Ian Farrer,
David A. Ritchie,
Christopher J. B. Ford
Abstract:
Surface acoustic waves (SAWs) have been used to transport single electrons across long distances of several hundreds of microns. They can potentially be instrumental in the implementation of scalable quantum processors and quantum repeaters, by facilitating interaction between distant qubits. While most of the work thus far has focused on SAW devices in doped GaAs/AlGaAs heterostructures, we have…
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Surface acoustic waves (SAWs) have been used to transport single electrons across long distances of several hundreds of microns. They can potentially be instrumental in the implementation of scalable quantum processors and quantum repeaters, by facilitating interaction between distant qubits. While most of the work thus far has focused on SAW devices in doped GaAs/AlGaAs heterostructures, we have developed a method of creating lateral p-n junctions in an undoped heterostructure containing a quantum well, with the expected advantages of having reduced charge noise and increased spin-coherence lifetimes due to the lack of dopant scattering centres. We present experimental observations of SAW-driven single-electron quantised current in an undoped GaAs/AlGaAs heterostructure, where single electrons were transported between regions of induced electrons. We also demonstrate pumping of electrons by a SAW across the sub-micron depleted channel between regions of electrons and holes, and observe light emission at such a lateral p-n junction. Improving the lateral confinement in the junction should make it possible to produce a quantised electron-to-hole current and hence SAW-driven emission of single photons.
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Submitted 11 October, 2019;
originally announced October 2019.
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Thermoelectric property of a one dimensional channel in the presence of a transverse magnetic field
Authors:
Chengyu Yan,
Michael Pepper,
Patrick See,
Ian Farrer,
David Ritchie,
Jonathan Griffiths
Abstract:
We studied the thermal conduction through a quantum point contact (QPC), defined in GaAs-AlGaAs heterostructure, in the presence of a transverse magnetic field. A shift in the position of thermo-voltage peak is observed with increasing field. The position of the thermo-voltage peak follows the Cutler-Mott relation in the small field regime (B < 0.5 T); it starts diverging from the Cutler-Mott rela…
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We studied the thermal conduction through a quantum point contact (QPC), defined in GaAs-AlGaAs heterostructure, in the presence of a transverse magnetic field. A shift in the position of thermo-voltage peak is observed with increasing field. The position of the thermo-voltage peak follows the Cutler-Mott relation in the small field regime (B < 0.5 T); it starts diverging from the Cutler-Mott relation in the moderate field regime, where a cubic magnetic field term dominates over the trivial quadratic term; eventually the shift saturates in the large field regime (B > 3.0 T). Our results suggest that additional calibration is necessary when using QPC as thermometry, especially when the transverse magnetic field is applied.
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Submitted 8 November, 2019; v1 submitted 14 March, 2019;
originally announced March 2019.
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Quantised conductance of one-dimensional strongly-correlated electrons in an oxide heterostructure
Authors:
H. Hou,
Y. Kozuka,
Jun-Wei Liao,
L. W. Smith,
D. Kos,
J. P. Griffiths,
J. Falson,
A. Tsukazaki,
M. Kawasaki,
C. J. B. Ford
Abstract:
Oxide heterostructures are versatile platforms with which to research and create novel functional nanostructures. We successfully develop one-dimensional (1D) quantum-wire devices using quantum point contacts on MgZnO/ZnO heterostructures and observe ballistic electron transport with conductance quantised in units of 2e^{2}/h. Using DC-bias and in-plane field measurements, we find that the g-facto…
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Oxide heterostructures are versatile platforms with which to research and create novel functional nanostructures. We successfully develop one-dimensional (1D) quantum-wire devices using quantum point contacts on MgZnO/ZnO heterostructures and observe ballistic electron transport with conductance quantised in units of 2e^{2}/h. Using DC-bias and in-plane field measurements, we find that the g-factor is enhanced to around 6.8, more than three times the value in bulk ZnO. We show that the effective mass m^{*} increases as the electron density decreases, resulting from the strong electron-electron interactions. In this strongly interacting 1D system we study features matching the 0.7 conductance anomalies up to the fifth subband. This paper demonstrates that high-mobility oxide heterostructures such as this can provide good alternatives to conventional III-V semiconductors in spintronics and quantum computing as they do not have their unavoidable dephasing from nuclear spins. This paves a way for the development of qubits benefiting from the low defects of an undoped heterostructure together with the long spin lifetimes achievable in silicon.
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Submitted 8 March, 2019;
originally announced March 2019.
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Continuous-Variable Tomography of Solitary Electrons
Authors:
J. D. Fletcher,
N. Johnson,
E. Locane,
P. See,
J. P. Griffiths,
I. Farrer,
D. A. Ritchie,
P. W. Brouwer,
V. Kashcheyevs,
M. Kataoka
Abstract:
A method for characterising the wave-function of freely-propagating particles would provide a useful tool for developing quantum-information technologies with single electronic excitations. Previous continuous-variable quantum tomography techniques developed to analyse electronic excitations in the energy-time domain have been limited to energies close to the Fermi level. We show that a wideband t…
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A method for characterising the wave-function of freely-propagating particles would provide a useful tool for developing quantum-information technologies with single electronic excitations. Previous continuous-variable quantum tomography techniques developed to analyse electronic excitations in the energy-time domain have been limited to energies close to the Fermi level. We show that a wideband tomography of single-particle distributions is possible using energy-time filtering and that the Wigner representation of the mixed-state density matrix can be reconstructed for solitary electrons emitted by an on-demand single-electron source. These are highly localised distributions, isolated from the Fermi sea. While we cannot resolve the pure state Wigner function of our excitations due to classical fluctuations, we can partially resolve the chirp and squeezing of the Wigner function imposed by emission conditions and quantify the quantumness of the source. This tomography scheme, when implemented with sufficient experimental resolution, will enable quantum-limited measurements, providing information on electron coherence and entanglement at the individual particle level.
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Submitted 20 January, 2020; v1 submitted 30 January, 2019;
originally announced January 2019.
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Experimental realization of a quantum dot energy harvester
Authors:
G. Jaliel,
R. K. Puddy,
R. Sánchez,
A. N. Jordan,
B. Sothmann,
I. Farrer,
J. P. Griffiths,
D. A. Ritchie,
C. G. Smith
Abstract:
We demonstrate experimentally an autonomous nanoscale energy harvester that utilises the physics of resonant tunnelling quantum dots. Gate defined quantum dots on GaAs/AlGaAs high-electron-mobility transistors are placed on either side of a hot electron reservoir. The discrete energy levels of the quantum dots are tuned to be aligned with low energy electrons on one side and high energy electrons…
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We demonstrate experimentally an autonomous nanoscale energy harvester that utilises the physics of resonant tunnelling quantum dots. Gate defined quantum dots on GaAs/AlGaAs high-electron-mobility transistors are placed on either side of a hot electron reservoir. The discrete energy levels of the quantum dots are tuned to be aligned with low energy electrons on one side and high energy electrons on the other side of the hot reservoir. The quantum dots thus act as energy filters and allow for the conversion of heat from the cavity into electrical power. This energy harvester device, measured at an estimated base temperature of 75 mK in a He3/He4 dilution refrigerator, can generate a thermal power of 0.13 fW when the temperature difference across each dot is about 67 mK.
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Submitted 1 October, 2019; v1 submitted 29 January, 2019;
originally announced January 2019.
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Single-photon Emission from an Acoustically-driven Lateral Light-emitting Diode
Authors:
Tzu-Kan Hsiao,
Antonio Rubino,
Yousun Chung,
Seok-Kyun Son,
Hangtian Hou,
Jorge Pedrós,
Ateeq Nasir,
Gabriel Éthier-Majcher,
Megan J. Stanley,
Richard T. Phillips,
Thomas A. Mitchell,
Jonathan P. Griffiths,
Ian Farrer,
David A. Ritchie,
Christopher J. B. Ford
Abstract:
Single-photon sources are essential building blocks in quantum photonic networks, where quantum-mechanical properties of photons are utilised to achieve quantum technologies such as quantum cryptography and quantum computing. Most conventional solid-state single-photon sources are based on single emitters such as self-assembled quantum dots, which are created at random locations and require spectr…
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Single-photon sources are essential building blocks in quantum photonic networks, where quantum-mechanical properties of photons are utilised to achieve quantum technologies such as quantum cryptography and quantum computing. Most conventional solid-state single-photon sources are based on single emitters such as self-assembled quantum dots, which are created at random locations and require spectral filtering. These issues hinder the integration of a single-photon source into a scaleable photonic quantum network for applications such as on-chip photonic quantum processors. In this work, using only regular lithography techniques on a conventional GaAs quantum well, we realise an electrically triggered single-photon source with a GHz repetition rate and without the need for spectral filtering. In this device, a single electron is carried in the potential minimum of a surface acoustic wave (SAW) and is transported to a region of holes to form an exciton. The exciton then decays and creates a single photon in a lifetime of ~ 100ps. This SAW-driven electroluminescence (EL) yields photon antibunching with $g^{(2)}(0) = 0.39 \pm 0.05$, which satisfies the common criterion for a single-photon source $g^{(2)}(0) < 0.5$. Furthermore, we estimate that if a photon detector receives a SAW-driven EL signal within one SAW period, this signal has a 79%-90% chance of being a single photon. This work shows that a single-photon source can be made by combining single-electron transport and a lateral n-i-p junction. This approach makes it possible to create multiple synchronised single-photon sources at chosen positions with photon energy determined by quantum-well thickness. Compared with conventional quantum-dot-based single-photon sources, this device may be more suitable for an on-chip integrated photonic quantum network.
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Submitted 10 January, 2019;
originally announced January 2019.
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Momentum-dependent power law measured in an interacting quantum wire beyond the Luttinger limit
Authors:
Y. Jin,
O. Tsyplyatyev,
M. Moreno,
A. Anthore,
W. K. Tan,
J. P. Griffiths,
I. Farrer,
D. A. Ritchie,
L. I. Glazman,
A. J. Schofield,
C. J. B. Ford
Abstract:
Power laws in physics have until now always been associated with a scale invariance originating from the absence of a length scale. Recently, an emergent invariance even in the presence of a length scale has been predicted by the newly-developed nonlinear-Luttinger-liquid theory for a one-dimensional (1D) quantum fluid at finite energy and momentum, at which the particle's wavelength provides the…
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Power laws in physics have until now always been associated with a scale invariance originating from the absence of a length scale. Recently, an emergent invariance even in the presence of a length scale has been predicted by the newly-developed nonlinear-Luttinger-liquid theory for a one-dimensional (1D) quantum fluid at finite energy and momentum, at which the particle's wavelength provides the length scale. We present the first experimental example of this new type of power law in the spectral function of interacting electrons in a quantum wire using a transport-spectroscopy technique. The observed momentum dependence of the power law in the high-energy region matches the theoretical predictions, supporting not only the 1D theory of interacting particles beyond the linear regime but also the existence of a new type of universality that emerges at finite energy and momentum.
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Submitted 8 November, 2018;
originally announced November 2018.
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Radio-frequency reflectometry of a quantum dot using an ultra-low-noise SQUID amplifier
Authors:
F. J. Schupp,
F. Vigneau,
Y. Wen,
A. Mavalankar,
J. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie,
C. G. Smith,
L. C. Camenzind,
L. Yu,
D. M. Zumbühl,
G. A. D. Briggs,
N. Ares,
E. A. Laird
Abstract:
Fault-tolerant spin-based quantum computers will require fast and accurate qubit readout. This can be achieved using radio-frequency reflectometry given sufficient sensitivity to the change in quantum capacitance associated with the qubit states. Here, we demonstrate a 23-fold improvement in capacitance sensitivity by supplementing a cryogenic semiconductor amplifier with a SQUID preamplifier. The…
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Fault-tolerant spin-based quantum computers will require fast and accurate qubit readout. This can be achieved using radio-frequency reflectometry given sufficient sensitivity to the change in quantum capacitance associated with the qubit states. Here, we demonstrate a 23-fold improvement in capacitance sensitivity by supplementing a cryogenic semiconductor amplifier with a SQUID preamplifier. The SQUID amplifier operates at a frequency near 200 MHz and achieves a noise temperature below 600 mK when integrated into a reflectometry circuit, which is within a factor 120 of the quantum limit. It enables a record sensitivity to capacitance of 0.07 aF/\sqrt{Hz}. The setup is used to acquire charge stability diagrams of a gate-defined double quantum dot in a short time with a signal-to-noise ration of about 38 in 1 microsecond of integration time.
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Submitted 29 June, 2020; v1 submitted 12 October, 2018;
originally announced October 2018.
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Rectification in mesoscopic AC-gated semiconductor devices
Authors:
S. P. Giblin,
M. Kataoka,
J. D. Fletcher,
P. See,
T. J. B. M. Janssen,
J. P. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie
Abstract:
We measure the rectified dc currents resulting when a 3-terminal semiconductor device with gate-dependent conductance is driven with an ac gate voltage. The rectified currents exhibit surprisingly complex behaviour as the dc source-drain bias voltage, the dc gate voltage and the amplitude of the ac gate voltage are varied. We obtain good agreement between our data and a model based on simple assum…
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We measure the rectified dc currents resulting when a 3-terminal semiconductor device with gate-dependent conductance is driven with an ac gate voltage. The rectified currents exhibit surprisingly complex behaviour as the dc source-drain bias voltage, the dc gate voltage and the amplitude of the ac gate voltage are varied. We obtain good agreement between our data and a model based on simple assumptions about the stray impedances on the sample chip, over a wide frequency range. This method is applicable to many types of experiment which involve ac gating of a non-linear device, and where an undesireable rectified contribution to the measured signal is present. Finally, we evaluate the small rectified currents flowing in tunable-barrier electron pumps operated in the pinched-off regime. These currents are at most $10^{-12}$ of the pumped current for a pump current of 100 pA. This result is encouraging for the development of tunable-barrier pumps as metrological current standards.
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Submitted 27 September, 2018;
originally announced September 2018.
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Error detection in a tunable-barrier electron pump
Authors:
S. P. Giblin,
P. See,
J. D. Fletcher,
T. J. B. M. Janssen,
J. P. Griffiths,
G. A. C. Jones,
I. Farrer,
M. Kataoka
Abstract:
We measure the average number of electrons loaded into an electrostatically-defined quantum dot (QD) operated as a tunable-barrier electron pump, using a point-contact (PC) charge sensor 1 micron away from the QD. The measurement of the electron number probes the QD loading dynamics even in the limit of slow gate voltage rise-times, when the pumped current is too small to measure. Using simulation…
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We measure the average number of electrons loaded into an electrostatically-defined quantum dot (QD) operated as a tunable-barrier electron pump, using a point-contact (PC) charge sensor 1 micron away from the QD. The measurement of the electron number probes the QD loading dynamics even in the limit of slow gate voltage rise-times, when the pumped current is too small to measure. Using simulations we show that, with optimised QD-PC coupling, the experiment can make single-shot measurements of the number of electrons in the QD with sufficiently high fidelity to test the error rate of the electron pump with metrological precision.
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Submitted 26 September, 2018;
originally announced September 2018.
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High-resolution error detection in the capture process of a single-electron pump
Authors:
S. P. Giblin,
P. See,
A. Petrie,
T. J. B. M. Janssen,
I. Farrer,
J. P. Griffiths,
G. A. C. Jones,
D. A. Ritchie,
M. Kataoka
Abstract:
The dynamic capture of electrons in a semiconductor quantum dot (QD) by raising a potential barrier is a crucial stage in metrological quantized charge pumping. In this work, we use a quantum point contact (QPC) charge sensor to study errors in the electron capture process of a QD formed in a GaAs heterostructure. Using a two-step measurement protocol to compensate for $1/f$ noise in the QPC curre…
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The dynamic capture of electrons in a semiconductor quantum dot (QD) by raising a potential barrier is a crucial stage in metrological quantized charge pumping. In this work, we use a quantum point contact (QPC) charge sensor to study errors in the electron capture process of a QD formed in a GaAs heterostructure. Using a two-step measurement protocol to compensate for $1/f$ noise in the QPC current, and repeating the protocol more than $10^{6}$ times, we are able to resolve errors with probabilities of order $10^{-6}$. For the studied sample, one-electron capture is affected by errors in $\sim30$ out of every million cycles, while two-electron capture was performed more than $10^6$ times with only one error. For errors in one-electron capture, we detect both failure to capture an electron, and capture of two electrons. Electron counting measurements are a valuable tool for investigating non-equilibrium charge capture dynamics, and necessary for validating the metrological accuracy of semiconductor electron pumps.
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Submitted 26 September, 2018;
originally announced September 2018.
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Magnetoresistance in an electronic cavity coupled to one-dimensional systems
Authors:
Chengyu Yan,
Sanjeev Kumar,
Patrick See,
Ian Farrer,
David Ritchie,
J. P. Griffiths,
G. A. C. Jones,
Michael Pepper
Abstract:
In this work, we performed magnetoresistance measurement in a hybrid system consisting of an arc-shaped quantum point contact (QPC) and a flat, rectangular QPC, both of which together form an electronic cavity between them. The results highlight a transition between collimation-induced resistance dip to a magnetoresistance peak as the strength of coupling between the QPC and the electronic cavity…
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In this work, we performed magnetoresistance measurement in a hybrid system consisting of an arc-shaped quantum point contact (QPC) and a flat, rectangular QPC, both of which together form an electronic cavity between them. The results highlight a transition between collimation-induced resistance dip to a magnetoresistance peak as the strength of coupling between the QPC and the electronic cavity was increased. The initial results show the promise of hybrid quantum system for future quantum technologies.
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Submitted 10 September, 2018;
originally announced September 2018.
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Incipient singlet-triplet states in a hybrid mesoscopic system
Authors:
Chengyu Yan,
Sanjeev Kumar,
Michael Pepper,
Patrick See,
Ian Farrer,
David Ritchie,
Jonathan Griffiths,
Geraint Jones
Abstract:
In the present work we provide an easily accessible way to achieve the singlet-triplet Kondo effect in a hybrid system consisting of a quantum point contact (QPC) coupled to an electronic cavity. We show that by activating the coupling between the QPC and cavity, a zero-bias anomaly occurs in a low conductance regime, a coexistence of zero-bias and finite-bias anomaly (FBA) in a medium conductance…
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In the present work we provide an easily accessible way to achieve the singlet-triplet Kondo effect in a hybrid system consisting of a quantum point contact (QPC) coupled to an electronic cavity. We show that by activating the coupling between the QPC and cavity, a zero-bias anomaly occurs in a low conductance regime, a coexistence of zero-bias and finite-bias anomaly (FBA) in a medium conductance regime, and a FBA-only anomaly in a high conductance regime. The latter two observations are due to the singlet-triplet Kondo effect.
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Submitted 28 June, 2018;
originally announced June 2018.
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Experimental verification of electrostatic boundary conditions in gate-patterned quantum devices
Authors:
H. Hou,
Y. Chung,
G. Rughoobur,
T. K. Hsiao,
A. Nasir,
A. J. Flewitt,
J. P. Griffiths,
I. Farrer,
D. A. Ritchie,
C. J. B. Ford
Abstract:
In a model of a gate-patterned quantum device it is important to choose the correct electrostatic boundary conditions (BCs) in order to match experiment. In this study, we model gated-patterned devices in doped and undoped GaAs heterostructures for a variety of BCs. The best match is obtained for an unconstrained surface between the gates, with a dielectric region above it and a frozen layer of su…
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In a model of a gate-patterned quantum device it is important to choose the correct electrostatic boundary conditions (BCs) in order to match experiment. In this study, we model gated-patterned devices in doped and undoped GaAs heterostructures for a variety of BCs. The best match is obtained for an unconstrained surface between the gates, with a dielectric region above it and a frozen layer of surface charge, together with a very deep back boundary. Experimentally, we find a 0.2V offset in pinch-off characteristics of one-dimensional channels in a doped heterostructure before and after etching off a ZnO overlayer, as predicted by the model. Also, we observe a clear quantised current driven by a surface acoustic wave through a lateral induced n-i-n junction in an undoped heterostructure. In the model, the ability to pump electrons in this type of device is highly sensitive to the back BC. Using the improved boundary conditions, it is straightforward to model quantum devices quite accurately using standard software.
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Submitted 24 June, 2018;
originally announced June 2018.
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Imaging the zigzag Wigner crystal in confinement-tunable quantum wires
Authors:
Sheng-Chin Ho,
Heng-Jian Chang,
Chia-Hua Chang,
Shun-Tsung Lo,
Graham Creeth,
Sanjeev Kumar,
Ian Farrer,
David Ritchie,
Jonathan Griffiths,
Geraint Jones,
Michael Pepper,
Tse-Ming Chen
Abstract:
The existence of Wigner crystallization, one of the most significant hallmarks of strong electron correlations, has to date only been definitively observed in two-dimensional systems. In one-dimensional (1D) quantum wires Wigner crystals correspond to regularly spaced electrons; however, weakening the confinement and allowing the electrons to relax in a second dimension is predicted to lead to the…
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The existence of Wigner crystallization, one of the most significant hallmarks of strong electron correlations, has to date only been definitively observed in two-dimensional systems. In one-dimensional (1D) quantum wires Wigner crystals correspond to regularly spaced electrons; however, weakening the confinement and allowing the electrons to relax in a second dimension is predicted to lead to the formation of a new ground state constituting a zigzag chain with nontrivial spin phases and properties. Here we report the observation of such zigzag Wigner crystals by use of on-chip charge and spin detectors employing electron focusing to image the charge density distribution and probe their spin properties. This experiment demonstrates both the structural and spin phase diagrams of the 1D Wigner crystallization. The existence of zigzag spin chains and phases which can be electrically controlled in semiconductor systems may open avenues for experimental studies of Wigner crystals and their technological applications in spintronics and quantum information.
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Submitted 23 April, 2018;
originally announced April 2018.
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Coherent Spin Amplification Using a Beam Splitter
Authors:
Chengyu Yan,
Sanjeev Kumar,
Kalarikad Thomas,
Patrick See,
Ian Farrer,
David Ritchie,
Jonathan Griffiths,
Geraint Jones,
Michael Pepper
Abstract:
We report spin amplification using a capacitive beam splitter in n-type GaAs where the spin polarization is monitored via transverse electron focusing measurement. It is shown that partially spin-polarized current injected by the emitter can be precisely controlled and the spin polarization associated with it can be amplified by the beam splitter, such that a considerably high spin polarization of…
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We report spin amplification using a capacitive beam splitter in n-type GaAs where the spin polarization is monitored via transverse electron focusing measurement. It is shown that partially spin-polarized current injected by the emitter can be precisely controlled and the spin polarization associated with it can be amplified by the beam splitter, such that a considerably high spin polarization of around 50% can be obtained. Additionally, the spin remains coherent as shown by the observation of quantum interference. Our results illustrate that spin polarization amplification can be achieved in materials without strong spin-orbit interaction.
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Submitted 27 March, 2018;
originally announced March 2018.
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Controlled spatial separation of spins and coherent dynamics in spin-orbit-coupled nanostructures
Authors:
Shun-Tsung Lo,
Chin-Hung Chen,
Ju-Chun Fan,
L. W. Smith,
G. L. Creeth,
Che-Wei Chang,
M. Pepper,
J. P. Griffiths,
I. Farrer,
H. E. Beere,
G. A. C. Jones,
D. A. Ritchie,
Tse-Ming Chen
Abstract:
The spatial separation of electron spins followed by the control of their individual spin dynamics has recently emerged as an essential ingredient in many proposals for spin-based technologies because it would enable both of the two spin species to be simultaneously utilized, distinct from most of the current spintronic studies and technologies wherein only one spin species could be handled at a t…
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The spatial separation of electron spins followed by the control of their individual spin dynamics has recently emerged as an essential ingredient in many proposals for spin-based technologies because it would enable both of the two spin species to be simultaneously utilized, distinct from most of the current spintronic studies and technologies wherein only one spin species could be handled at a time. Here we demonstrate that the spatial spin splitting of a coherent beam of electrons can be achieved and controlled using the interplay between an external magnetic field and Rashba spin-orbit interaction in semiconductor nanostructures. The technique of transverse magnetic focusing is used to detect this spin separation. More notably, our ability to engineer the spin-orbit interactions enables us to simultaneously manipulate and probe the coherent spin dynamics of both spin species and hence their correlation, which could open a route towards spintronics and spin-based quantum information processing.
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Submitted 30 January, 2018;
originally announced January 2018.
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LO-phonon emission rate of hot electrons from an on-demand single-electron source in a GaAs/AlGaAs heterostructure
Authors:
N. Johnson,
C. Emary,
S. Ryu,
H. -S. Sim,
P. See,
J. D. Fletcher,
J. P. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie,
M. Pepper,
T. J. B. M. Janssen,
M. Kataoka
Abstract:
Using a recently-developed time-of-flight measurement technique with 1 ps time resolution and electron-energy spectroscopy, we developed a method to measure the longitudinal-optical-phonon emission rate of hot electrons travelling along a depleted edge of a quantum Hall bar. A comparison of the experimental results to a single-particle model implies that the main scattering mechanism involves a tw…
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Using a recently-developed time-of-flight measurement technique with 1 ps time resolution and electron-energy spectroscopy, we developed a method to measure the longitudinal-optical-phonon emission rate of hot electrons travelling along a depleted edge of a quantum Hall bar. A comparison of the experimental results to a single-particle model implies that the main scattering mechanism involves a two-step process via intra-Landau-level transition. We show this scattering can be suppressed by controlling the edge potential profile, and a scattering length > 1 mm can be achieved, allowing the use of this system for scalable single-electron device applications.
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Submitted 25 December, 2017;
originally announced December 2017.
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Temperature Dependence of Spin-Split Peaks in Transverse Electron Focusing
Authors:
Chengyu Yan,
Sanjeev Kumar,
Michael Pepper,
Patrick See,
Ian Farrer,
David Ritchie,
Jonathan Griffiths,
Geraint Jones
Abstract:
We present experimental results of transverse electron-focusing measurements performed using n-type GaAs. In the presence of a small transverse magnetic field (B), electrons are focused from the injector to detector leading to focusing peaks periodic in B. We show that the odd-focusing peaks exhibit a split, where each sub-peak represents a population of a particular spin branch emanating from the…
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We present experimental results of transverse electron-focusing measurements performed using n-type GaAs. In the presence of a small transverse magnetic field (B), electrons are focused from the injector to detector leading to focusing peaks periodic in B. We show that the odd-focusing peaks exhibit a split, where each sub-peak represents a population of a particular spin branch emanating from the injector. The temperature dependence reveals that the peak splitting is well defined at low temperature whereas it smears out at high temperature indicating the exchange-driven spin polarisation in the injector is dominant at low temperatures.
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Submitted 22 September, 2017;
originally announced September 2017.
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Interference Effects in a Tunable Quantum Point Contact Integrated with an Electronic Cavity
Authors:
Chengyu Yan,
Sanjeev Kumar,
Michael Pepper,
Patrick See,
Ian Farrer,
David Ritchie,
Jonathan Griffiths,
Geraint Jones
Abstract:
We show experimentally how quantum interference can be produced using an integrated quantum system comprising an arch-shaped short quantum wire (or quantum point contact, QPC) of 1D electrons and a reflector forming an electronic cavity. On tuning the coupling between the QPC and the electronic cavity, fine oscillations are observed when the arch QPC is operated in the quasi-1D regime. These oscil…
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We show experimentally how quantum interference can be produced using an integrated quantum system comprising an arch-shaped short quantum wire (or quantum point contact, QPC) of 1D electrons and a reflector forming an electronic cavity. On tuning the coupling between the QPC and the electronic cavity, fine oscillations are observed when the arch QPC is operated in the quasi-1D regime. These oscillations correspond to interference between the 1D states and a state which is similar to the Fabry-Perot state and suppressed by a small transverse magnetic field of 60mT. Tuning the reflector, we find a peak in resistance which follows the behavior expected for a Fano resonance. We suggest that this is an interesting example of a Fano resonance in an open system which corresponds to interference at or near the Ohmic contacts due to a directly propagating, reflected discrete path and the continuum states of the cavity corresponding to multiple scattering. Remarkably, the Fano factor shows an oscillatory behavior taking peaks for each fine oscillation, thus, confirming coupling between the discrete and continuum states. The results indicate that such a simple quantum device can be used as building blocks to create more complex integrated quantum circuits for possible applications ranging from quantum-information processing to realizing the fundamentals of complex quantum systems.
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Submitted 17 August, 2017;
originally announced August 2017.
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Surface zeta potential and diamond seeding on gallium nitride films
Authors:
Soumen Mandal,
Evan L. H. Thomas,
Callum Middleton,
Laia Gines,
James Griffiths,
Menno Kappers,
Rachel Oliver,
David J. Wallis,
Lucy E. Goff,
Stephen A. Lynch,
Martin Kuball,
Oliver A. Williams
Abstract:
Measurement of zeta potential of Ga and N-face gallium nitride has been carried out as function of pH. Both the faces show negative zeta potential in the pH range 5.5-9. The Ga face has an isoelectric point at pH 5.5. The N-face shows higher negative zeta potential due to larger concentration of adsorbed oxygen. Zeta potential data clearly showed that H-terminated diamond seed solution at pH 8 wil…
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Measurement of zeta potential of Ga and N-face gallium nitride has been carried out as function of pH. Both the faces show negative zeta potential in the pH range 5.5-9. The Ga face has an isoelectric point at pH 5.5. The N-face shows higher negative zeta potential due to larger concentration of adsorbed oxygen. Zeta potential data clearly showed that H-terminated diamond seed solution at pH 8 will be optimal for the self assembly of a monolayer of diamond nanoparticles on the GaN surface. Subsequent growth of thin diamond films on GaN seeded with H-terminated diamond seeds produced fully coalesced films confirming a seeding density in excess of 10$^{12}$ cm$^{-2}$. This technique removes the requirement for a low thermal conduction seeding layer like silicon nitride on GaN.
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Submitted 9 October, 2017; v1 submitted 17 July, 2017;
originally announced July 2017.
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Direct observation of exchange-driven spin interactions in one-dimensional system
Authors:
Chengyu Yan,
Sanjeev Kumar,
Kalarikad Thomas,
Michael Pepper,
Patrick See,
Ian Farrer,
David Ritchie,
J. P. Griffiths,
G. A. C. Jones
Abstract:
We present experimental results of transverse electron focusing measurements performed on an n-type GaAs based mesoscopic device consisting of one-dimensional (1D) quantum wires as injector and detector. We show that non-adiabatic injection of 1D electrons at a conductance of e$^2$/h results in a single first focusing peak, which on gradually increasing the injector conductance up to 2e$^2$/h , pr…
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We present experimental results of transverse electron focusing measurements performed on an n-type GaAs based mesoscopic device consisting of one-dimensional (1D) quantum wires as injector and detector. We show that non-adiabatic injection of 1D electrons at a conductance of e$^2$/h results in a single first focusing peak, which on gradually increasing the injector conductance up to 2e$^2$/h , produces asymmetric two sub-peaks in the first focusing peak, each sub-peak representing the population of spin-state arising from the spatially separated spins in the injector. Further increasing the conductance flips the spin-states in the 1D channel thus reversing the asymmetry in the sub-peaks. On applying a source-drain bias, the spin-gap, so obtained, can be resolved thus providing evidence of exchange interaction induced spin polarisation in the 1D systems.
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Submitted 14 July, 2017;
originally announced July 2017.
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Surface Acoustic wave modulation of a coherently driven quantum dot in a pillar microcavity
Authors:
B. Villa,
A. J. Bennett,
D. J. P. Ellis,
J. P. Lee,
J. Skiba-Szymanska,
T. A. Mitchell,
J. P. Griffiths,
I. Farrer,
D. A. Ritchie,
C. J. B. Ford,
A. J. Shields
Abstract:
We report the efficient coherent photon scattering from a semiconductor quantum dot embedded in a pillar microcavity. We show that a surface acoustic wave can periodically modulate the energy levels of the quantum dot, but has a negligible effect on the cavity mode. The scattered narrow-band laser is converted to a pulsed single-photon stream, displaying an anti-bunching dip characteristic of sing…
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We report the efficient coherent photon scattering from a semiconductor quantum dot embedded in a pillar microcavity. We show that a surface acoustic wave can periodically modulate the energy levels of the quantum dot, but has a negligible effect on the cavity mode. The scattered narrow-band laser is converted to a pulsed single-photon stream, displaying an anti-bunching dip characteristic of single-photon emission. Multiple phonon sidebands are resolved in the emission spectrum, due to the absorption and emission of vibrational quanta in each scattering event.
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Submitted 4 July, 2017;
originally announced July 2017.
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Fano Resonance in a cavity-reflector hybrid system
Authors:
Chengyu Yan,
Sanjeev Kumar,
Michael Pepper,
Patrick See,
Ian Farrer,
David Ritchie,
Jonathan Griffiths,
Geraint Jones
Abstract:
We present the results of transport measurements in a hybrid system consisting of an arch-shaped quantum point contact (QPC) and a reflector; together, they form an electronic cavity in between them. On tuning the arch-QPC and the reflector, asymmetric resonance peak in resistance is observed at the one-dimension to two-dimension transition. Moreover, a dip in resistance near the pinch-off of the…
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We present the results of transport measurements in a hybrid system consisting of an arch-shaped quantum point contact (QPC) and a reflector; together, they form an electronic cavity in between them. On tuning the arch-QPC and the reflector, asymmetric resonance peak in resistance is observed at the one-dimension to two-dimension transition. Moreover, a dip in resistance near the pinch-off of the QPC is found to be strongly dependent on the reflector voltage. These two structures fit very well with the Fano line shape. The Fano resonance was found to get weakened on applying a transverse magnetic field, and it smeared out at 100 mT. In addition, the Fano like shape exhibited a strong temperature dependence and gradually smeared out when the temperature was increased from 1.5 to 20 K. The results might be useful in realising device for quantum information processing.
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Submitted 7 February, 2017;
originally announced February 2017.
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A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates
Authors:
D. Kundys,
D. Sutherland,
M. Davies,
F. Oehler,
J. Griffiths,
P. Dawson,
M. J. Kappers,
C. J. Humphreys,
S. Schulz,
F. Tang,
R. A. Oliver
Abstract:
In this paper we report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane and m-plane free-standing bulk GaN substrates where the In content varied from 0.14 to 0.28 in the m-plane series and 0.08 to 0.21 for the a-plane series. The low temperature photoluminescence spectra from both sets of samples are ver…
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In this paper we report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane and m-plane free-standing bulk GaN substrates where the In content varied from 0.14 to 0.28 in the m-plane series and 0.08 to 0.21 for the a-plane series. The low temperature photoluminescence spectra from both sets of samples are very broad with full width at half-maximum height increasing from 81 to 330 meV as the In fraction increases. Comparative photoluminescence excitation spectroscopy indicates that the recombination mainly involves strongly localised carriers. At a temperature of 10 K the degree of linear polarisation of the a-plane samples is much smaller than of the m-plane counterparts and also varies across the spectrum. From polarisation-resolved photoluminescence excitation spectroscopy we measured the energy splitting between the lowest valence sub-band states to lie in the range of 23-54 meV for both a-and m-plane samples in which we could observe distinct exciton features in the polarised photoluminescence excitation spectroscopy. Thus, the thermal occupation of a higher valence subband cannot be responsible for the reduction of the degree of linear polarisation. Time-resolved spectroscopy indicates that in a-plane samples there is an extra emission component which at least partly responsible for the reduction in the degree of linear polarisation.
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Submitted 11 November, 2016;
originally announced December 2016.
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Ultrafast Voltage Sampling using Single-Electron Wavepackets
Authors:
N. Johnson,
J. D. Fletcher,
D. A. Humphreys,
P. See,
J. P. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie,
M. Pepper,
T. J. B. M Janssen,
M. Kataoka
Abstract:
We demonstrate an ultrafast voltage sampling technique using a stream of electron wavepackets. Electrons are emitted from a single-electron pump and travel through electron waveguides towards a detector potential barrier. Our electrons sample an instantaneous voltage on the gate upon arrival at the detector barrier. Fast sampling is achieved by minimising the duration that the electrons interact w…
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We demonstrate an ultrafast voltage sampling technique using a stream of electron wavepackets. Electrons are emitted from a single-electron pump and travel through electron waveguides towards a detector potential barrier. Our electrons sample an instantaneous voltage on the gate upon arrival at the detector barrier. Fast sampling is achieved by minimising the duration that the electrons interact with the barrier, which can be made as small as a few picoseconds. The value of the instantaneous voltage can be determined by varying the gate voltage to match the barrier height to the electron energy, which is used as a stable reference. The test waveform can be reconstructed by shifting the electron arrival time against it. We argue that this method has scope to increase the bandwidth of voltage sampling to 100 GHz and beyond.
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Submitted 14 October, 2016; v1 submitted 3 October, 2016;
originally announced October 2016.
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Time-of-Flight Measurements of Single-Electron Wave Packets in Quantum-Hall Edge States
Authors:
M. Kataoka,
N. Johnson,
C. Emary,
P. See,
J. P. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie,
M. Pepper,
T. J. B. M. Janssen
Abstract:
We report time-of-flight measurements on electrons travelling in quantum-Hall edge states. Hot-electron wave packets are emitted one per cycle into edge states formed along a depleted sample boundary. The electron arrival time is detected by driving a detector barrier with a square wave that acts as a shutter. By adding an extra path using a deflection barrier, we measure a delay in the arrival ti…
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We report time-of-flight measurements on electrons travelling in quantum-Hall edge states. Hot-electron wave packets are emitted one per cycle into edge states formed along a depleted sample boundary. The electron arrival time is detected by driving a detector barrier with a square wave that acts as a shutter. By adding an extra path using a deflection barrier, we measure a delay in the arrival time, from which the edge-state velocity $v$ is deduced. We find that $v$ follows $1/B$ dependence, in good agreement with the $\vec{E} \times \vec{B}$ drift. The edge potential is estimated from the energy-dependence of $v$ using a harmonic approximation.
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Submitted 9 December, 2015;
originally announced December 2015.
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Nonlinear spectra of spinons and holons in short GaAs quantum wires
Authors:
M. Moreno,
C. J. B. Ford,
Y. Jin,
J. P. Griffiths,
I. Farrer,
G. A. C. Jones,
D. A. Ritchie,
O. Tsyplyatyev,
A. J. Schofield
Abstract:
One-dimensional electronic fluids are peculiar conducting systems, where the fundamental role of interactions leads to exotic, emergent phenomena, such as spin-charge (spinon-holon) separation. The distinct low-energy properties of these 1D metals are successfully described within the theory of linear Luttinger liquids, but the challenging task of describing their high-energy nonlinear properties…
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One-dimensional electronic fluids are peculiar conducting systems, where the fundamental role of interactions leads to exotic, emergent phenomena, such as spin-charge (spinon-holon) separation. The distinct low-energy properties of these 1D metals are successfully described within the theory of linear Luttinger liquids, but the challenging task of describing their high-energy nonlinear properties has long remained elusive. Recently, novel theoretical approaches accounting for nonlinearity have been developed, yet the rich phenomenology that they predict remains barely explored experimentally. Here, we probe the nonlinear spectral characteristics of short GaAs quantum wires by tunnelling spectroscopy, using an advanced device consisting of 6000 wires. We find evidence for the existence of an inverted (spinon) shadow band in the main region of the particle sector, one of the central predictions of the new nonlinear theories. A (holon) band with reduced effective mass is clearly visible in the particle sector at high energies.
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Submitted 15 September, 2016; v1 submitted 9 November, 2015;
originally announced November 2015.
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Sensitive radio-frequency measurements of a quantum dot by tuning to perfect impedance matching
Authors:
N. Ares,
F. J. Schupp,
A. Mavalankar,
G. Rogers,
J. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie,
C. G. Smith,
A. Cottet,
G. A. D. Briggs,
E. A. Laird
Abstract:
Electrical readout of spin qubits requires fast and sensitive measurements, but these are hindered by poor impedance matching to the device. We demonstrate perfect impedance matching in a radio-frequency readout circuit, realized by incorporating voltage-tunable varactors to cancel out parasitic capacitances. In the optimized setup, a capacitance sensitivity of…
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Electrical readout of spin qubits requires fast and sensitive measurements, but these are hindered by poor impedance matching to the device. We demonstrate perfect impedance matching in a radio-frequency readout circuit, realized by incorporating voltage-tunable varactors to cancel out parasitic capacitances. In the optimized setup, a capacitance sensitivity of $1.6~\mathrm{aF}/\sqrt{\mathrm{Hz}}$ is achieved at a maximum source-drain bias of $170~μ$V root-mean-square and with bandwidth above $15~$MHz. Coulomb blockade is measured via both conductance and capacitance in a quantum dot, and the two contributions are found to be proportional, as expected from a quasistatic tunneling model. We benchmark our results against the requirements for single-shot qubit readout using quantum capacitance, a goal that has so far been elusive.
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Submitted 30 November, 2015; v1 submitted 23 October, 2015;
originally announced October 2015.
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Structural, electronic, and optical properties of $m$-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory
Authors:
S. Schulz,
D. P. Tanner,
E. P. O'Reilly,
M. A. Caro,
T. L. Martin,
P. A. J. Bagot,
M. P. Moody,
F. Tang,
J. T. Griffiths,
F. Oehler,
M. J. Kappers,
R. A. Oliver,
C. J. Humphreys,
D. Sutherland,
M. J. Davies,
P. Dawson
Abstract:
In this paper we present a detailed analysis of the structural, electronic, and optical properties of an $m$-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally characterized by x-ray diffraction, scanning transmission electron microscopy, and 3D atom probe tomography. The optical properties of the sample have been studied by photo…
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In this paper we present a detailed analysis of the structural, electronic, and optical properties of an $m$-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally characterized by x-ray diffraction, scanning transmission electron microscopy, and 3D atom probe tomography. The optical properties of the sample have been studied by photoluminescence (PL), time-resolved PL spectroscopy, and polarized PL excitation spectroscopy. The PL spectrum consisted of a very broad PL line with a high degree of optical linear polarization. To understand the optical properties we have performed atomistic tight-binding calculations, and based on our initial atom probe tomography data, the model includes the effects of strain and built-in field variations arising from random alloy fluctuations. Furthermore, we included Coulomb effects in the calculations. Our microscopic theoretical description reveals strong hole wave function localization effects due to random alloy fluctuations, resulting in strong variations in ground state energies and consequently the corresponding transition energies. This is consistent with the experimentally observed broad PL peak. Furthermore, when including Coulomb contributions in the calculations we find strong exciton localization effects which explain the form of the PL decay transients. Additionally, the theoretical results confirm the experimentally observed high degree of optical linear polarization. Overall, the theoretical data are in very good agreement with the experimental findings, highlighting the strong impact of the microscopic alloy structure on the optoelectronic properties of these systems.
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Submitted 1 December, 2015; v1 submitted 23 September, 2015;
originally announced September 2015.
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Nature of the many-body excitations in a quantum wire: theory and experiment
Authors:
O. Tsyplyatyev,
A. J. Schofield,
Y. Jin,
M. Moreno,
W. K. Tan,
A. S. Anirban,
C. J. B. Ford,
J. P. Griffiths,
I. Farrer,
G. A. C. Jones,
D. A. Ritchie
Abstract:
The natural excitations of an interacting one-dimensional system at low energy are hydrodynamic modes of Luttinger liquid, protected by the Lorentz invariance of the linear dispersion. We show that beyond low energies, where quadratic dispersion reduces the symmetry to Galilean, the main character of the many-body excitations changes into a hierarchy: calculations of dynamic correlation functions…
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The natural excitations of an interacting one-dimensional system at low energy are hydrodynamic modes of Luttinger liquid, protected by the Lorentz invariance of the linear dispersion. We show that beyond low energies, where quadratic dispersion reduces the symmetry to Galilean, the main character of the many-body excitations changes into a hierarchy: calculations of dynamic correlation functions for fermions (without spin) show that the spectral weights of the excitations are proportional to powers of $\mathcal{R}^{2}/L^{2}$, where $\mathcal{R}$ is a length-scale related to interactions and $L$ is the system length. Thus only small numbers of excitations carry the principal spectral power in representative regions on the energy-momentum planes. We have analysed the spectral function in detail and have shown that the first-level (strongest) excitations form a mode with parabolic dispersion, like that of a renormalised single particle. The second-level excitations produce a singular power-law line shape to the first-level mode and multiple power-laws at the spectral edge. We have illustrated crossover to Luttinger liquid at low energy by calculating the local density of state through all energy scales: from linear to non-linear, and to above the chemical potential energies. In order to test this model, we have carried out experiments to measure momentum-resolved tunnelling of electrons (fermions with spin) from/to a wire formed within a GaAs heterostructure. We observe well-resolved spin-charge separation at low energy with appreciable interaction strength and only a parabolic dispersion of the first-level mode at higher energies. We find structure resembling the second-level excitations, which dies away rapidly at high momentum in line with the theoretical predictions here.
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Submitted 28 August, 2015;
originally announced August 2015.
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The effect of split gate size on the electrostatic potential and 0.7 anomaly within one-dimensional quantum wires on a modulation doped GaAs/AlGaAs heterostructure
Authors:
L. W. Smith,
H. Al-Taie,
A. A. J. Lesage,
K. J. Thomas,
F. Sfigakis,
P. See,
J. P. Griffiths,
I. Farrer,
G. A. C. Jones,
D. A. Ritchie,
M. J. Kelly,
C. G. Smith
Abstract:
We study 95 split gates of different size on a single chip using a multiplexing technique. Each split gate defines a one-dimensional channel on a modulation-doped GaAs/AlGaAs heterostructure, through which the conductance is quantized. The yield of devices showing good quantization decreases rapidly as the length of the split gates increases. However, for the subset of devices showing good quantiz…
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We study 95 split gates of different size on a single chip using a multiplexing technique. Each split gate defines a one-dimensional channel on a modulation-doped GaAs/AlGaAs heterostructure, through which the conductance is quantized. The yield of devices showing good quantization decreases rapidly as the length of the split gates increases. However, for the subset of devices showing good quantization, there is no correlation between the electrostatic length of the one dimensional channel (estimated using a saddle point model), and the gate length. The variation in electrostatic length and the one-dimensional subband spacing for devices of the same gate length exceeds the variation in the average values between devices of different length. There is a clear correlation between the curvature of the potential barrier in the transport direction and the strength of the "0.7 anomaly": the conductance value of the 0.7 anomaly reduces as the barrier curvature becomes shallower. These results highlight the key role of the electrostatic environment in one-dimensional systems. Even in devices with clean conductance plateaus, random fluctuations in the background potential are crucial in determining the potential landscape in the active device area such that nominally identical gate structures have different characteristics.
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Submitted 6 November, 2015; v1 submitted 12 August, 2015;
originally announced August 2015.
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All-electric all-semiconductor spin field effect transistors
Authors:
Pojen Chuang,
Sheng-Chin Ho,
L. W. Smith,
F. Sfigakis,
M. Pepper,
Chin-Hung Chen,
Ju-Chun Fan,
J. P. Griffiths,
I. Farrer,
H. E. Beere,
G. A. C. Jones,
D. A. Ritchie,
Tse-Ming Chen
Abstract:
The spin field effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field effect transistor for information processing has yet to be achieved, owing to several fundamental challenges such as the low spin-injection efficiency due to re…
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The spin field effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field effect transistor for information processing has yet to be achieved, owing to several fundamental challenges such as the low spin-injection efficiency due to resistance mismatch, spin relaxation, and the spread of spin precession angles. Alternative spin transistor designs have therefore been proposed, but these differ from the field effect transistor concept and require the use of optical or magnetic elements, which pose difficulties for the incorporation into integrated circuits. Here, we present an all-electric and all-semiconductor spin field effect transistor, in which these obstacles are overcome by employing two quantum point contacts as spin injectors and detectors. Distinct engineering architectures of spin-orbit coupling are exploited for the quantum point contacts and the central semiconductor channel to achieve complete control of the electron spins -- spin injection, manipulation, and detection -- in a purely electrical manner. Such a device is compatible with large-scale integration and hold promise for future spintronic devices for information processing.
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Submitted 22 June, 2015;
originally announced June 2015.
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Magnetic field induced charge redistribution in disordered graphene double quantum dots
Authors:
K. L. Chiu,
M. R. Connolly,
A. Cresti,
J. P. Griffiths,
G. A. C. Jones,
C. G. Smith
Abstract:
We have studied the transport properties of a large graphene double quantum dot under the influence of background disorder potential and magnetic field. At low temperatures, the evolution of the charge-stability diagram as a function of B-field is investigated up to 10 Tesla. Our results indicate that the charging energy of quantum dot is reduced, and hence the size of the dot increases, at high m…
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We have studied the transport properties of a large graphene double quantum dot under the influence of background disorder potential and magnetic field. At low temperatures, the evolution of the charge-stability diagram as a function of B-field is investigated up to 10 Tesla. Our results indicate that the charging energy of quantum dot is reduced, and hence the size of the dot increases, at high magnetic field. We provide an explanation of our results using a tight-binding model, which describes the charge redistribution in a disordered graphene quantum dot via the formation of Landau levels and edge states. Our model suggests that the tunnel barriers separating different electron/hole puddles in a dot become transparent at high B-fields, resulting in the charge delocalization and reduced charging energy observed experimentally.
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Submitted 7 May, 2015;
originally announced May 2015.
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Measurement and control of electron wave packets from a single-electron source
Authors:
J. Waldie,
P. See,
V. Kashcheyevs,
J. P. Griffiths,
I. Farrer,
G. A. C. Jones,
D. A. Ritchie,
T. J. B. M. Janssen,
M. Kataoka
Abstract:
We report an experimental technique to measure and manipulate the arrival-time and energy distributions of electrons emitted from a semiconductor electron pump, operated as both a single-electron source and a two-electron source. Using an energy-selective detector whose transmission we control on picosecond timescales, we can measure directly the electron arrival-time distribution and we determine…
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We report an experimental technique to measure and manipulate the arrival-time and energy distributions of electrons emitted from a semiconductor electron pump, operated as both a single-electron source and a two-electron source. Using an energy-selective detector whose transmission we control on picosecond timescales, we can measure directly the electron arrival-time distribution and we determine the upper-bound to the distribution width to be 30 ps. We study the effects of modifying the shape of the voltage waveform that drives the electron pump, and show that our results can be explained by a tunneling model of the emission mechanism. This information was in turn used to control the emission-time difference and energy gap between a pair of electrons.
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Submitted 22 July, 2015; v1 submitted 24 March, 2015;
originally announced March 2015.
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Radio-frequency capacitance spectroscopy of metallic nanoparticles
Authors:
J. C. Frake,
S. Kano,
C. Ciccarelli,
J. Griffiths,
M. Sakamoto,
T. Teranishi,
Y. Majima,
C. G. Smith,
M. R. Buitelaar
Abstract:
Recent years have seen great progress in our understanding of the electronic properties of nanomaterials in which at least one dimension measures less than 100 nm. However, contacting true nanometer scale materials such as individual molecules or nanoparticles remains a challenge as even state-of-the-art nanofabrication techniques such as electron-beam lithography have a resolution of a few nm at…
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Recent years have seen great progress in our understanding of the electronic properties of nanomaterials in which at least one dimension measures less than 100 nm. However, contacting true nanometer scale materials such as individual molecules or nanoparticles remains a challenge as even state-of-the-art nanofabrication techniques such as electron-beam lithography have a resolution of a few nm at best. Here we present a fabrication and measurement technique that allows high sensitivity and high bandwidth readout of discrete quantum states of metallic nanoparticles which does not require nm resolution or precision. This is achieved by coupling the nanoparticles to resonant electrical circuits and measurement of the phase of a reflected radio-frequency signal. This requires only a single tunnel contact to the nanoparticles thus simplifying device fabrication and improving yield and reliability. The technique is demonstrated by measurements on 2.7 nm thiol coated gold nanoparticles which are shown to be in excellent quantitative agreement with theory.
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Submitted 16 March, 2015;
originally announced March 2015.
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Dependence of the 0.7 anomaly on the curvature of the potential barrier in quantum wires
Authors:
L. W. Smith,
H. Al-Taie,
A. A. J. Lesage,
F. Sfigakis,
P. See,
J. P. Griffiths,
H. E. Beere,
G. A. C. Jones,
D. A. Ritchie,
A. R. Hamilton,
M. J. Kelly,
C. G. Smith
Abstract:
Ninety eight one-dimensional channels defined using split gates fabricated on a GaAs/AlGaAs heterostructure are measured during one cooldown at 1.4 K. The devices are arranged in an array on a single chip, and individually addressed using a multiplexing technique. The anomalous conductance feature known as the "0.7 structure" is studied using statistical techniques. The ensemble of data show that…
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Ninety eight one-dimensional channels defined using split gates fabricated on a GaAs/AlGaAs heterostructure are measured during one cooldown at 1.4 K. The devices are arranged in an array on a single chip, and individually addressed using a multiplexing technique. The anomalous conductance feature known as the "0.7 structure" is studied using statistical techniques. The ensemble of data show that the 0.7 anomaly becomes more pronounced and occurs at lower values as the curvature of the potential barrier in the transport direction decreases. This corresponds to an increase in the effective length of the device. The 0.7 anomaly is not strongly influenced by other properties of the conductance related to density. The curvature of the potential barrier appears to be the primary factor governing the shape of the 0.7 structure at a given T and B.
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Submitted 1 June, 2015; v1 submitted 4 March, 2015;
originally announced March 2015.
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Many-body effects in a quasi-one-dimensional electron gas
Authors:
Sanjeev Kumar,
Kalarikad J. Thomas,
Luke W. Smith,
Michael Pepper,
Graham L. Creeth,
Ian Farrer,
David Ritchie,
Geraint Jones,
Jonathan Griffiths
Abstract:
We have investigated electron transport in a quasi-one dimensional (quasi-1D) electron gas as a function of the confinement potential. At a particular potential configuration, and electron concentration, the ground state of a 1D quantum wire splits into two rows to form an incipient Wigner lattice. It was found that application of a transverse magnetic field can transform a double-row electron con…
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We have investigated electron transport in a quasi-one dimensional (quasi-1D) electron gas as a function of the confinement potential. At a particular potential configuration, and electron concentration, the ground state of a 1D quantum wire splits into two rows to form an incipient Wigner lattice. It was found that application of a transverse magnetic field can transform a double-row electron configuration into a single-row due to magnetic enhancement of the confinement potential. The movements of the energy levels have been monitored under varying conditions of confinement potential and in-plane magnetic field. It is also shown that when the confinement is weak, electron occupation drives a reordering of the levels such that the normal ground state passes through the higher levels. The results show that the levels can be manipulated by utilising their different dependence on spatial confinement and electron concentration, thus enhancing the understanding of many body interactions in mesoscopic 1D quantum wires.
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Submitted 21 November, 2014;
originally announced November 2014.
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Hierarchy of modes in an interacting system
Authors:
O. Tsyplyatyev,
A. J. Schofield,
Y. Jin,
M. Moreno,
W. K. Tan,
C. J. B. Ford,
J. P. Griffiths,
I. Farrer,
G. A. C. Jones,
D. A. Ritchie
Abstract:
Studying interacting fermions in 1D at high energy, we find a hierarchy in the spectral weights of the excitations theoretically and we observe evidence for second-level excitations experimentally. Diagonalising a model of fermions (without spin), we show that levels of the hierarchy are separated by powers of $\mathcal{R}^{2}/L^{2}$, where $\mathcal{R}$ is a length-scale related to interactions a…
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Studying interacting fermions in 1D at high energy, we find a hierarchy in the spectral weights of the excitations theoretically and we observe evidence for second-level excitations experimentally. Diagonalising a model of fermions (without spin), we show that levels of the hierarchy are separated by powers of $\mathcal{R}^{2}/L^{2}$, where $\mathcal{R}$ is a length-scale related to interactions and $L$ is the system length. The first-level (strongest) excitations form a mode with parabolic dispersion, like that of a renormalised single particle. The second-level excitations produce a singular power-law line shape to the first-level mode and multiple power-laws at the spectral edge. We measure momentum-resolved tunnelling of electrons (fermions with spin) from/to a wire formed within a GaAs heterostructure, which shows parabolic dispersion of the first-level mode and well-resolved spin-charge separation at low energy with appreciable interaction strength. We find structure resembling the second-level excitations, which dies away quite rapidly at high momentum.
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Submitted 13 August, 2014;
originally announced August 2014.