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Structure evolution of hcp/ccp metal oxide interfaces in solid-state reactions
Authors:
C. Li,
G. Habler,
T. Griffiths,
A. Rečnik,
P. Jeřábek,
L. C. Götze,
C. Mangler,
T. J. Pennycook,
J. Meyer,
R. Abart
Abstract:
The structure of crystalline interfaces plays an important role in solid-state reactions. The Al2O3/MgAl2O4/MgO system provides an ideal model system for investigating the mechanisms underlying the migration of interfaces during interface reaction. MgAl2O4 layers have been grown between Al2O3 and MgO, and the atomic structure of Al2O3/MgAl2O4 interfaces at different growth stages was characterized…
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The structure of crystalline interfaces plays an important role in solid-state reactions. The Al2O3/MgAl2O4/MgO system provides an ideal model system for investigating the mechanisms underlying the migration of interfaces during interface reaction. MgAl2O4 layers have been grown between Al2O3 and MgO, and the atomic structure of Al2O3/MgAl2O4 interfaces at different growth stages was characterized using aberration-corrected scanning transmission electron microscopy. The oxygen sublattice transforms from hexagonal close-packed (hcp) stacking in Al2O3 to cubic close-packed (ccp) stacking in MgAl2O4. Partial dislocations associated with steps are observed at the interface. At the reaction-controlled early growth stages, such partial dislocations coexist with the edge dislocations. However, at the diffusion-controlled late growth stages, such partial dislocations are dominant. The observed structures indicate that progression of the Al2O3/MgAl2O4 interface into Al2O3 is accomplished by the glide of partial dislocations accompanied by the exchange of Al3+ and Mg2+ cations. The interface migration may be envisaged as a plane-by-plane zipper-like motion, which repeats along the interface facilitating its propagation. MgAl2O4 grains can adopt two crystallographic orientations with a twinning orientation relationship, and grow by dislocations gliding in opposite directions. Where the oppositely propagating partial dislocations and interface steps meet, interlinked twin boundaries and incoherent Σ3 grain boundaries form. The newly grown MgAl2O4 grains compete with each other, leading to a growth-selection and successive coarsening of the MgAl2O4 grains. This understanding could help to interpret the interface reaction or phase transformation of a wide range of materials that exhibit a similar hcp/ccp transition.
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Submitted 19 December, 2018; v1 submitted 14 April, 2018;
originally announced April 2018.
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Structural, electronic, and optical properties of $m$-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory
Authors:
S. Schulz,
D. P. Tanner,
E. P. O'Reilly,
M. A. Caro,
T. L. Martin,
P. A. J. Bagot,
M. P. Moody,
F. Tang,
J. T. Griffiths,
F. Oehler,
M. J. Kappers,
R. A. Oliver,
C. J. Humphreys,
D. Sutherland,
M. J. Davies,
P. Dawson
Abstract:
In this paper we present a detailed analysis of the structural, electronic, and optical properties of an $m$-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally characterized by x-ray diffraction, scanning transmission electron microscopy, and 3D atom probe tomography. The optical properties of the sample have been studied by photo…
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In this paper we present a detailed analysis of the structural, electronic, and optical properties of an $m$-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally characterized by x-ray diffraction, scanning transmission electron microscopy, and 3D atom probe tomography. The optical properties of the sample have been studied by photoluminescence (PL), time-resolved PL spectroscopy, and polarized PL excitation spectroscopy. The PL spectrum consisted of a very broad PL line with a high degree of optical linear polarization. To understand the optical properties we have performed atomistic tight-binding calculations, and based on our initial atom probe tomography data, the model includes the effects of strain and built-in field variations arising from random alloy fluctuations. Furthermore, we included Coulomb effects in the calculations. Our microscopic theoretical description reveals strong hole wave function localization effects due to random alloy fluctuations, resulting in strong variations in ground state energies and consequently the corresponding transition energies. This is consistent with the experimentally observed broad PL peak. Furthermore, when including Coulomb contributions in the calculations we find strong exciton localization effects which explain the form of the PL decay transients. Additionally, the theoretical results confirm the experimentally observed high degree of optical linear polarization. Overall, the theoretical data are in very good agreement with the experimental findings, highlighting the strong impact of the microscopic alloy structure on the optoelectronic properties of these systems.
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Submitted 1 December, 2015; v1 submitted 23 September, 2015;
originally announced September 2015.
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The Evolution of Quasiparticle Charge in the Fractional Quantum Hall Regime
Authors:
T. G. Griffiths,
E. Comforti,
M. Heiblum,
Ady Stern,
V. Umansky
Abstract:
The charge of quasiparticles in a fractional quantum Hall (FQH) liquid, tunneling through a partly reflecting constriction with transmission t, was determined via shot noise measurements. In the nu=1/3 FQH state, a charge smoothly evolving from e*=e/3 for t=1 to e*=e for t<<1 was determined, agreeing with chiral Luttinger liquid theory. In the nu=2/5 FQH state the quasiparticle charge evolves sm…
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The charge of quasiparticles in a fractional quantum Hall (FQH) liquid, tunneling through a partly reflecting constriction with transmission t, was determined via shot noise measurements. In the nu=1/3 FQH state, a charge smoothly evolving from e*=e/3 for t=1 to e*=e for t<<1 was determined, agreeing with chiral Luttinger liquid theory. In the nu=2/5 FQH state the quasiparticle charge evolves smoothly from e*=e/5 at t=1 to a maximum charge less than e*=e/3 at t<<1. Thus it appears that quasiparticles with an approximate charge e/5 pass a barrier they see as almost opaque.
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Submitted 19 July, 2000; v1 submitted 16 July, 2000;
originally announced July 2000.
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Observation of a Fifth of the Electron Charge
Authors:
M. Reznikov,
R. de Picciotto,
T. G. Griffiths,
M. Heiblum,
V. Umansky
Abstract:
We report the observation of quasi-particles with a charge q=e/5 detected by shot noise measurements in the 2/5 conducting channel (filling factor 2/5). This is in agreement with previous measurements that showed that the current in the lower, 1/3, channel is carried by quasiparticles with a charge q=e/3. These results demonstrate that the actual fraction of the charge can be different from the…
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We report the observation of quasi-particles with a charge q=e/5 detected by shot noise measurements in the 2/5 conducting channel (filling factor 2/5). This is in agreement with previous measurements that showed that the current in the lower, 1/3, channel is carried by quasiparticles with a charge q=e/3. These results demonstrate that the actual fraction of the charge can be different from the filling factor. Moreover, we show that there is no strong interaction between the channels, which can be considered as conducting the current independently.
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Submitted 17 January, 1999;
originally announced January 1999.
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Metal-insulator transition at B=0 in an ultra-low density ($r_{s}=23$) two dimensional GaAs/AlGaAs hole gas
Authors:
M. Y. Simmons,
A. R. Hamilton,
T. G. Griffiths,
A. K. Savchenko,
M. Pepper,
D. A. Ritchie
Abstract:
We have observed a metal-insulator transition in an ultra-low density two dimensional hole gas formed in a high quality GaAs-AlGaAs heterostructure at B=0. At the highest carrier density studied ($p_{s}=2.2x10^{10} cm^{-2}, r_{s}=16$) the hole gas is strongly metallic, with an exceptional mobility of $425,000 cm^{2}V^{-1}s^{-1}$. The low disorder and strength of the many-body interactions in thi…
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We have observed a metal-insulator transition in an ultra-low density two dimensional hole gas formed in a high quality GaAs-AlGaAs heterostructure at B=0. At the highest carrier density studied ($p_{s}=2.2x10^{10} cm^{-2}, r_{s}=16$) the hole gas is strongly metallic, with an exceptional mobility of $425,000 cm^{2}V^{-1}s^{-1}$. The low disorder and strength of the many-body interactions in this sample are highlighted by the observation of re-entrant metal insulator transitions in both the fractional ($ν< 1/3$) and integer ($2 > ν> 1$) quantum Hall regimes. On reducing the carrier density the temperature and electric field dependence of the resistivity show that the sample is still metallic at $p_{s}=1.3x10^{10} cm^{-2}$ ($r_{s}=21$), becoming insulating at $p_{s}{\simeq}1x10^{10} cm^{-2}$. Our results indicate that electron-electron interactions are dominant at these low densities, pointing to the many body origins of this metal-insulator transition. We note that the value of $r_{s}$ at the transition ($r_{s}=23 +/- 2$) is large enough to allow the formation of a weakly pinned Wigner crystal, and is approaching the value calculated for the condensation of a pure Wigner crystal.
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Submitted 12 October, 1997;
originally announced October 1997.