(Translated by https://www.hiragana.jp/)
Search | arXiv e-print repository
Skip to main content

Showing 1–5 of 5 results for author: Griffiths, T

Searching in archive cond-mat. Search in all archives.
.
  1. arXiv:1804.05190  [pdf

    cond-mat.mtrl-sci

    Structure evolution of hcp/ccp metal oxide interfaces in solid-state reactions

    Authors: C. Li, G. Habler, T. Griffiths, A. Rečnik, P. Jeřábek, L. C. Götze, C. Mangler, T. J. Pennycook, J. Meyer, R. Abart

    Abstract: The structure of crystalline interfaces plays an important role in solid-state reactions. The Al2O3/MgAl2O4/MgO system provides an ideal model system for investigating the mechanisms underlying the migration of interfaces during interface reaction. MgAl2O4 layers have been grown between Al2O3 and MgO, and the atomic structure of Al2O3/MgAl2O4 interfaces at different growth stages was characterized… ▽ More

    Submitted 19 December, 2018; v1 submitted 14 April, 2018; originally announced April 2018.

    Journal ref: Acta Crystallographica Section A (2018). A74, 466-480

  2. Structural, electronic, and optical properties of $m$-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory

    Authors: S. Schulz, D. P. Tanner, E. P. O'Reilly, M. A. Caro, T. L. Martin, P. A. J. Bagot, M. P. Moody, F. Tang, J. T. Griffiths, F. Oehler, M. J. Kappers, R. A. Oliver, C. J. Humphreys, D. Sutherland, M. J. Davies, P. Dawson

    Abstract: In this paper we present a detailed analysis of the structural, electronic, and optical properties of an $m$-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally characterized by x-ray diffraction, scanning transmission electron microscopy, and 3D atom probe tomography. The optical properties of the sample have been studied by photo… ▽ More

    Submitted 1 December, 2015; v1 submitted 23 September, 2015; originally announced September 2015.

    Comments: 13 pages, 12 figures

  3. arXiv:cond-mat/0007264  [pdf, ps, other

    cond-mat.mes-hall cond-mat.str-el

    The Evolution of Quasiparticle Charge in the Fractional Quantum Hall Regime

    Authors: T. G. Griffiths, E. Comforti, M. Heiblum, Ady Stern, V. Umansky

    Abstract: The charge of quasiparticles in a fractional quantum Hall (FQH) liquid, tunneling through a partly reflecting constriction with transmission t, was determined via shot noise measurements. In the nu=1/3 FQH state, a charge smoothly evolving from e*=e/3 for t=1 to e*=e for t<<1 was determined, agreeing with chiral Luttinger liquid theory. In the nu=2/5 FQH state the quasiparticle charge evolves sm… ▽ More

    Submitted 19 July, 2000; v1 submitted 16 July, 2000; originally announced July 2000.

    Comments: 4 pages, Correct figure 3 and caption included

  4. arXiv:cond-mat/9901150  [pdf, ps

    cond-mat.mes-hall cond-mat.str-el

    Observation of a Fifth of the Electron Charge

    Authors: M. Reznikov, R. de Picciotto, T. G. Griffiths, M. Heiblum, V. Umansky

    Abstract: We report the observation of quasi-particles with a charge q=e/5 detected by shot noise measurements in the 2/5 conducting channel (filling factor 2/5). This is in agreement with previous measurements that showed that the current in the lower, 1/3, channel is carried by quasiparticles with a charge q=e/3. These results demonstrate that the actual fraction of the charge can be different from the… ▽ More

    Submitted 17 January, 1999; originally announced January 1999.

    Comments: 12 pages, including 4 figures

  5. arXiv:cond-mat/9710111  [pdf, ps, other

    cond-mat.str-el cond-mat.mes-hall

    Metal-insulator transition at B=0 in an ultra-low density ($r_{s}=23$) two dimensional GaAs/AlGaAs hole gas

    Authors: M. Y. Simmons, A. R. Hamilton, T. G. Griffiths, A. K. Savchenko, M. Pepper, D. A. Ritchie

    Abstract: We have observed a metal-insulator transition in an ultra-low density two dimensional hole gas formed in a high quality GaAs-AlGaAs heterostructure at B=0. At the highest carrier density studied ($p_{s}=2.2x10^{10} cm^{-2}, r_{s}=16$) the hole gas is strongly metallic, with an exceptional mobility of $425,000 cm^{2}V^{-1}s^{-1}$. The low disorder and strength of the many-body interactions in thi… ▽ More

    Submitted 12 October, 1997; originally announced October 1997.

    Comments: 4 pages, latex, 4 postscript figures, submitted to EP2DS-12 on 21st August 1997, to appear in Physica B