Showing 1–25 of 25 results for author: Gruverman, A

Imaging Local Effects of Voltage and Boron Doping on Spin Reversal in Antiferromagnetic Magnetoelectric Cr2O3 Thin Films and Devices

Authors: Adam Erickson, Syed Qamar Abbas Shah, Ather Mahmood, Pratyush Buragohain, Ilja Fescenko, Alexei Gruverman, Christian Binek, Abdelghani Laraoui

Abstract: Chromia (Cr2O3) is a magnetoelectric oxide which permits voltage-control of the antiferromagnetic (AFM) order, but it suffers technological constraints due to its low Neel Temperature (TN ~307 K) and the need of a symmetry breaking applied magnetic field to achieve reversal of the Neel vector. Recently, boron (B) doping of Cr2O3 films led to an increase TN > 400 K and allowed the realization of vo… ▽ More Chromia (Cr2O3) is a magnetoelectric oxide which permits voltage-control of the antiferromagnetic (AFM) order, but it suffers technological constraints due to its low Neel Temperature (TN ~307 K) and the need of a symmetry breaking applied magnetic field to achieve reversal of the Neel vector. Recently, boron (B) doping of Cr2O3 films led to an increase TN > 400 K and allowed the realization of voltage magnetic-field free controlled Néel vector rotation. Here, we directly image the impact of B doping on the formation of AFM domains in Cr2O3 thin films and elucidate the mechanism of voltage-controlled manipulation of the spin structure using nitrogen vacancy (NV) scanning probe magnetometry. We find a stark reduction and thickness dependence of domain size in B-doped Cr2O3 (B:Cr2O3) films, explained by the increased germ density, likely associated with the B doping. By reconstructing the surface magnetization from the NV stray-field maps, we find a qualitative distinction between the undoped and B-doped Cr2O3 films, manifested by the histogram distribution of the AFM ordering, i.e., 180 degree domains for pure films, and 90 degree domains for B:Cr2O3 films. Additionally, NV imaging of voltage-controlled B-doped Cr2O3 devices corroborate the 90 degeree rotation of the AFM domains observed in magnetotransport measurement. △ Less

Submitted 17 May, 2024; originally announced May 2024.

Duality of switching mechanisms and transient negative capacitance in improper ferroelectrics

Authors: Xin Li, Yu Yun, Pratyush Buragohain, Arashdeep Singh Thind, Donald A. Walko, Detian Yang, Rohan Mishra, Alexei Gruverman, Xiaoshan Xu

Abstract: The recent discovery of transient negative capacitance has sparked an intense debate on the role of homogeneous and inhomogeneous mechanisms in polarizations switching. In this work, we report observation of transient negative capacitance in improper ferroelectric h-YbFeO3 films in a resistor-capacitor circuit, and a concaved shape of anomaly in the voltage wave form, in the early and late stage o… ▽ More The recent discovery of transient negative capacitance has sparked an intense debate on the role of homogeneous and inhomogeneous mechanisms in polarizations switching. In this work, we report observation of transient negative capacitance in improper ferroelectric h-YbFeO3 films in a resistor-capacitor circuit, and a concaved shape of anomaly in the voltage wave form, in the early and late stage of the polarizations switching respectively. Using a phenomenological model, we show that the early-stage negative capacitance is likely due to the inhomogeneous switching involving nucleation and domain wall motion, while the anomaly at the late stage, which appears to be a reminiscent negative capacitance is the manifestation of the thermodynamically unstable part of the free-energy landscape in the homogeneous switching. The complex free-energy landscape in hexagonal ferrites may be the key to cause the abrupt change in polarization switching speed and the corresponding anomaly. These results reconcile the two seemingly conflicting mechanisms in the polarization switching and highlight their different roles at different stages. The unique energy-landscape in hexagonal ferrites that reveals the dual switching mechanism suggests the promising application potential in terms of negative capacitance. △ Less

Submitted 25 September, 2023; originally announced September 2023.

Comments: 14 pages,5 figures

Observation of Antiferroelectric Domain Walls in a Uniaxial Hyperferroelectric

Authors: Michele Conroy, Didrik René Småbråten, Colin Ophus, Konstantin Shapovalov, Quentin M. Ramasse, Kasper Aas Hunnestad, Sverre M. Selbach, Ulrich Aschauer, Kalani Moore, J. Marty Gregg, Ursel Bangert, Massimiliano Stengel, Alexei Gruverman, Dennis Meier

Abstract: Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies showed that the configuration of ferroelectric walls can go well beyond the conventional Ising-type structure. Néel-, Bloch-, and vortex-like polar patterns have been observed, displaying strong similarities with the spin textures at magnetic domain walls. Here, we report the disc… ▽ More Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies showed that the configuration of ferroelectric walls can go well beyond the conventional Ising-type structure. Néel-, Bloch-, and vortex-like polar patterns have been observed, displaying strong similarities with the spin textures at magnetic domain walls. Here, we report the discovery of antiferroelectric domain walls in the uniaxial ferroelectric Pb$_{5}$Ge$_{3}$O$_{11}$. We resolve highly mobile domain walls with an alternating displacement of Pb atoms, resulting in a cyclic 180$^{\circ}$ flip of dipole direction within the wall. Density functional theory calculations reveal that Pb$_{5}$Ge$_{3}$O$_{11}$ is hyperferroelectric, allowing the system to overcome the depolarization fields that usually suppress antiparallel ordering of dipoles along the longitudinal direction. Interestingly, the antiferroelectric walls observed under the electron beam are energetically more costly than basic head-to-head or tail-to-tail walls. The results suggest a new type of excited domain-wall state, expanding previous studies on ferroelectric domain walls into the realm of antiferroic phenomena. △ Less

Submitted 5 September, 2023; originally announced September 2023.

Ultra-High Carrier Mobilities in Ferroelectric Domain Wall Corbino Cones at Room Temperature

Authors: Conor J. McCluskey, Matthew G. Colbear, James P. V. McConville, Shane J. McCartan, Jesi R. Maguire, Michele Conroy, Kalani Moore, Alan Harvey, Felix Trier, Ursel Bangert, Alexei Gruverman, Manuel Bibes, Amit Kumar, Raymond G. P. McQuaid, J. Marty Gregg

Abstract: Recently, electrically conducting heterointerfaces between dissimilar band-insulators (such as lanthanum aluminate and strontium titanate) have attracted considerable research interest. Charge transport has been thoroughly explored and fundamental aspects of conduction firmly established. Perhaps surprisingly, similar insights into conceptually much simpler conducting homointerfaces, such as the d… ▽ More Recently, electrically conducting heterointerfaces between dissimilar band-insulators (such as lanthanum aluminate and strontium titanate) have attracted considerable research interest. Charge transport has been thoroughly explored and fundamental aspects of conduction firmly established. Perhaps surprisingly, similar insights into conceptually much simpler conducting homointerfaces, such as the domain walls that separate regions of different orientations of electrical polarisation within the same ferroelectric band-insulator, are not nearly so well-developed. Addressing this disparity, we herein report magnetoresistance in approximately conical 180o charged domain walls, which occur in partially switched ferroelectric thin film single crystal lithium niobate. This system is ideal for such measurements: firstly, the conductivity difference between domains and domain walls is extremely and unusually large (a factor of at least 1013) and hence currents driven through the thin film, between planar top and bottom electrodes, are overwhelmingly channelled along the walls; secondly, when electrical contact is made to the top and bottom of the domain walls and a magnetic field is applied along their cone axes (perpendicular to the thin film surface), then the test geometry mirrors that of a Corbino disc, which is a textbook arrangement for geometric magnetoresistance measurement. Our data imply carriers at the domain walls with extremely high room temperature Hall mobilities of up to ~ 3,700cm2V-1s-1. This is an unparalleled value for oxide interfaces (and for bulk oxides too) and is most comparable to mobilities in other systems typically seen at cryogenic, rather than at room, temperature. △ Less

Submitted 29 June, 2022; originally announced June 2022.

Comments: 22 pages main text, 24 pages supplementary information. Published in advanced materials, DOI:https://doi.org/10.1002/adma.202204298

Topological polarization networking in uniaxial ferroelectrics

Authors: Y. Tikhonov, J. R. Maguire, C. J. McCluskey, J. P. V. McConville, A. Kumar, D. Meier, A. Razumnaya, J. M. Gregg, A. Gruverman, V. M. Vinokur, I. Luk'yanchuk

Abstract: Discovery of topological polarization textures has put ferroelectrics at the frontier of topological matter science. High-symmetry ferroelectric oxide materials allowing for freedom of the polarization vector rotation offer a fertile ground for emergent topological polar formations, like vortices, skyrmions, merons, and Hopfions. It has been commonly accepted that uniaxial ferroelectrics do not be… ▽ More Discovery of topological polarization textures has put ferroelectrics at the frontier of topological matter science. High-symmetry ferroelectric oxide materials allowing for freedom of the polarization vector rotation offer a fertile ground for emergent topological polar formations, like vortices, skyrmions, merons, and Hopfions. It has been commonly accepted that uniaxial ferroelectrics do not belong in the topological universe because strong anisotropy imposes insurmountable energy barriers for topological excitations. Here we show that uniaxial ferroelectrics provide unique opportunity for the formation of topological polarization networks comprising branching intertwined domains with opposite counterflowing polarization. We report that they host the topological state of matter: a crisscrossing structure of topologically protected colliding head-to-head and tail-to-tail polarization domains, which for decades has been considered impossible from the electrostatic viewpoint. The domain wall interfacing the counterflowing domains is a multiconnected surface, propagating through the whole volume of the ferroelectric. △ Less

Submitted 11 April, 2022; originally announced April 2022.

In-plane quasi-single-domain BaTiO$_3$ via interfacial symmetry engineering

Authors: J. W. Lee, K. Eom, T. R. Paudel, B. Wang, H. Lu, H. Huyan, S. Lindemann, S. Ryu, H. Lee, T. H. Kim, Y. Yuan, J. A. Zorn, S. Lei, W. Gao, T. Tybell, V. Gopalan, X. Pan, A. Gruverman, L. Q. Chen, E. Y. Tsymbal, C. B. Eom

Abstract: The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry… ▽ More The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric BaTiO$_3$ thin films. Theoretical calculations predict the key role of the BaTiO$_3$ / PrScO$_3$ (110)$_O$ substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices. △ Less

Submitted 16 September, 2021; originally announced September 2021.

Intrinsic ferroelectricity in Y-doped HfO2 thin films

Authors: Yu Yun, Pratyush Buragohain, Ming Li, Zahra Ahmadi, Yizhi Zhang, Xin Li, Haohan Wang, Lingling Tao, Haiyan Wang, Jeffrey E. Shield, Evgeny Y. Tsymbal, Alexei Gruverman, Xiaoshan Xu

Abstract: Ferroelectric HfO2-based materials hold great potential for widespread integration of ferroelectricity into modern electronics due to their robust ferroelectric properties at the nanoscale and compatibility with the existing Si technology. Earlier work indicated that the nanometer crystal grain size was crucial for stabilization of the ferroelectric phase of hafnia. This constraint caused high den… ▽ More Ferroelectric HfO2-based materials hold great potential for widespread integration of ferroelectricity into modern electronics due to their robust ferroelectric properties at the nanoscale and compatibility with the existing Si technology. Earlier work indicated that the nanometer crystal grain size was crucial for stabilization of the ferroelectric phase of hafnia. This constraint caused high density of unavoidable structural defects of the HfO2-based ferroelectrics, obscuring the intrinsic ferroelectricity inherited from the crystal space group of bulk HfO2. Here, we demonstrate the intrinsic ferroelectricity in Y-doped HfO2 films of high crystallinity. Contrary to the common expectation, we show that in the 5% Y-doped HfO2 epitaxial thin films, high crystallinity enhances the spontaneous polarization up to a record-high 50 μみゅーC/cm2 value at room temperature. The high spontaneous polarization persists at reduced temperature, with polarization values consistent with our theoretical predictions, indicating the dominant contribution from the intrinsic ferroelectricity. The crystal structure of these films reveals the Pca21 orthorhombic phase with a small rhombohedral distortion, underlining the role of the anisotropic stress and strain. These results open a pathway to controlling the intrinsic ferroelectricity in the HfO2-based materials and optimizing their performance in applications. △ Less

Submitted 10 September, 2021; originally announced September 2021.

Journal ref: Nature Materials 21, 903 (2022)

Piezoelectricity in hafnia

Authors: Sangita Dutta, Pratyush Buragohain, Sebastjan Glinsek, Claudia Richter, Hugo Aramberri, Haidong Lu, Uwe Schroeder, Emmanuel Defay, Alexei Gruverman, Jorge Íñiguez

Abstract: Because of its compatibility with semiconductor-based technologies, hafnia (HfO$_{2}$) is today's most promising ferroelectric material for applications in electronics. Yet, knowledge on the ferroic and electromechanical response properties of this all-important compound is still lacking. Interestingly, HfO$_2$ has recently been predicted to display a negative longitudinal piezoelectric effect, wh… ▽ More Because of its compatibility with semiconductor-based technologies, hafnia (HfO$_{2}$) is today's most promising ferroelectric material for applications in electronics. Yet, knowledge on the ferroic and electromechanical response properties of this all-important compound is still lacking. Interestingly, HfO$_2$ has recently been predicted to display a negative longitudinal piezoelectric effect, which sets it apart form classic ferroelectrics (e.g., perovskite oxides like PbTiO$_3$) and is reminiscent of the behavior of some organic compounds. The present work corroborates this behavior, by first-principles calculations and an experimental investigation of HfO$_2$ thin films using piezoresponse force microscopy. Further,the simulations show how the chemical coordination of the active oxygen atoms is responsible for the negative longitudinal piezoelectric effect. Building on these insights, it is predicted that, by controlling the environment of such active oxygens (e.g., by means of an epitaxial strain), it is possible to change the sign of the piezoelectric response of the material. △ Less

Submitted 15 July, 2021; originally announced July 2021.

Comments: 11 pages, 9 figures

Persistent Ionic Photo-responses and Frank-Condon Mechanism in Proton-transfer Ferroelectrics

Authors: Xuanyuan Jiang, Xiao Wang, Pratyush Buragohain, Andy Clark, Haidong Lu, Shashi Poddar, Le Yu, Anthony D DiChiara, Alexei Gruverman, Xuemei Cheng, Xiaoshan Xu

Abstract: Photoexcitation is well-known to trigger electronic metastable states and lead to phenomena like long-lived photoluminescence and photoconductivity. In contrast, persistent photo-response due to ionic metastable states is rare. In this work, we report persistent structural and ferroelectric photo-responses due to proton metastable states via a nuclear quantum mechanism in ferroelectric croconic ac… ▽ More Photoexcitation is well-known to trigger electronic metastable states and lead to phenomena like long-lived photoluminescence and photoconductivity. In contrast, persistent photo-response due to ionic metastable states is rare. In this work, we report persistent structural and ferroelectric photo-responses due to proton metastable states via a nuclear quantum mechanism in ferroelectric croconic acid, in which the proton-transfer origin of ferroelectricity is important for the ionic metastable states. We show that, after photoexcitation, the changes of structural and ferroelectric properties relax in about 1000 s, while the photoconductivity decays within 1 s, indicating the dominant ionic origin of the responses. The photogenerated internal bias field that survives polarization switching process suggests another proton transfer route and metastable state, in addition to the metastable states resulting from proton transfer along the hydrogen bonds proposed previously. Analysis based on Frank Condon principle reveals the quantum mechanical nature of the proton-transfer process both within the hydrogen bonds and out of the hydrogen bonds, where small mass of proton and significant change of potential landscape due to the excited electronic states are the key. The demonstration of persistent photo-responses due to the proton metastable states unveils a nuclear quantum mechanism for photo-tunability of materials, which is expected to impact many material properties sensitive to ionic positions. △ Less

Submitted 6 May, 2021; originally announced May 2021.

Tip-induced domain protrusion in ferroelectric films with in-plane polarization

Authors: S. Kondovych, A. Gruverman, I. Luk'yanchuk

Abstract: Charge manipulation and fabrication of stable domain patterns in ferroelectric materials by scanning probe microscopy open up broad avenues for the development of tunable electronics. Harnessing the polarization energy and electrostatic forces with specific geometry of the system enables producing the nanoscale domains by-design. Along with that, domain engineering requires mastery of underlying p… ▽ More Charge manipulation and fabrication of stable domain patterns in ferroelectric materials by scanning probe microscopy open up broad avenues for the development of tunable electronics. Harnessing the polarization energy and electrostatic forces with specific geometry of the system enables producing the nanoscale domains by-design. Along with that, domain engineering requires mastery of underlying physical mechanisms that govern the domain formation. Here, we present a theoretical description of the domain formation by a scanning probe microscopy tip in a ferroelectric film with strong in-plane anisotropy of polarization. We demonstrate that local charge injection produces wedge-shaped domains that propagate along the anisotropy axis, whereas the tip-written lines of charge generate a comb-like domain structure. The results of our calculations agree with earlier experimental observations and allow for the optimization of the targeted domain structures. △ Less

Submitted 5 February, 2021; originally announced February 2021.

Comments: 5 pages, 3 figures

Journal ref: Journal of Applied Physics 129, 054103 (2021)

Transient Nature of Negative Capacitance in Ferroelectric Field-Effect Transistors

Authors: Kwok Ng, Steven J. Hillenius, Alexei Gruverman

Abstract: Negative capacitance (NC) in ferroelectrics, which stems from the imperfect screening of polarization, is considered a viable approach to lower voltage operation in the field-effect transistors (FETs) used in logic switches. In this paper, we discuss the implications of the transient nature of negative capacitance for its practical application. It is suggested that the NC effect needs to be charac… ▽ More Negative capacitance (NC) in ferroelectrics, which stems from the imperfect screening of polarization, is considered a viable approach to lower voltage operation in the field-effect transistors (FETs) used in logic switches. In this paper, we discuss the implications of the transient nature of negative capacitance for its practical application. It is suggested that the NC effect needs to be characterized at the proper time scale to identify the type of circuits where functional NC-FETs can be used effectively. △ Less

Submitted 4 August, 2017; originally announced August 2017.

Comments: 4 manuscript pages. 3 journal pages. 4 figures

Journal ref: Solid State Communications. 265, pp. 12-14 (2017)

On the persistence of polar domains in ultrathin ferroelectric capacitors

Authors: Pavlo Zubko, Haidong Lu, Chung-Wung Bark, Xavi Martí, José Santiso, Chang-Beom Eom, Gustau Catalan, Alexei Gruverman

Abstract: The instability of ferroelectric ordering in ultra-thin films is one of the most important fundamental issues pertaining realization of a number of electronic devices with enhanced functionality, such as ferroelectric and multiferroic tunnel junctions or ferroelectric field effect transistors. In this paper, we investigate the polarization state of archetypal ultrathin (several nanometres) ferroel… ▽ More The instability of ferroelectric ordering in ultra-thin films is one of the most important fundamental issues pertaining realization of a number of electronic devices with enhanced functionality, such as ferroelectric and multiferroic tunnel junctions or ferroelectric field effect transistors. In this paper, we investigate the polarization state of archetypal ultrathin (several nanometres) ferroelectric heterostructures: epitaxial single-crystalline BaTiO$_3$ films sandwiched between the most habitual perovskite electrodes, SrRuO$_3$, on top of the most used perovskite substrate, SrTiO$_3$. We use a combination of piezoresponse force microscopy, dielectric measurements and structural characterization to provide conclusive evidence for the ferroelectric nature of the relaxed polarization state in ultrathin BaTiO$_3$ capacitors. We show that even the high screening efficiency of SrRuO$_3$ electrodes is still insufficient to stabilize polarization in SrRuO$_3$/BaTiO$_3$/SrRuO$_3$ heterostructures at room temperature. We identify the key role of domain wall motion in determining the macroscopic electrical properties of ultrathin capacitors and discuss their dielectric response in the light of the recent interest in negative capacitance behaviour. △ Less

Submitted 16 June, 2017; v1 submitted 16 May, 2017; originally announced May 2017.

Comments: 13 pages, 4 figures

Journal ref: J. Phys.: Condens. Matter 29, 284001 (2017)

Theoretical Approach to Electroresistance in Ferroelectric Tunnel Junctions

Authors: Sou-Chi Chang, Azad Naeemi, Dmitri E. Nikonov, Alexei Gruverman

Abstract: In this paper, a theoretical approach, comprising the non-equilibrium Green's function method for electronic transport and Landau-Khalatnikov equation for electric polarization dynamics, is presented to describe polarization-dependent tunneling electroresistance (TER) in ferroelectric tunnel junctions. Using appropriate contact, interface, and ferroelectric parameters, measured current-voltage cha… ▽ More In this paper, a theoretical approach, comprising the non-equilibrium Green's function method for electronic transport and Landau-Khalatnikov equation for electric polarization dynamics, is presented to describe polarization-dependent tunneling electroresistance (TER) in ferroelectric tunnel junctions. Using appropriate contact, interface, and ferroelectric parameters, measured current-voltage characteristic curves in both inorganic (Co/BaTiO$_{3}$/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$) and organic (Au/PVDF/W) ferroelectric tunnel junctions can be well described by the proposed approach. Furthermore, under this theoretical framework, the controversy of opposite TER signs observed experimentally by different groups in Co/BaTiO$_{3}$/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ systems is addressed by considering the interface termination effects using the effective contact ratio, defined through the effective screening length and dielectric response at the metal/ferroelectric interfaces. Finally, our approach is extended to investigate the role of a CoO$_{x}$ buffer layer at the Co/BaTiO$_{3}$ interface in a ferroelectric tunnel memristor. It is shown that, to have a significant memristor behavior, not only the interface oxygen vacancies but also the CoO$_{x}$ layer thickness may vary with the applied bias. △ Less

Submitted 9 September, 2016; originally announced September 2016.

Comments: 12 pages

Journal ref: Phys. Rev. Applied 7, 024005 (2017)

Room Temperature Ferroelectricity in Continuous Croconic Acid Thin Films

Authors: Xuanyuan Jiang, Haidong Lu, Yuewei Yin, Xiaozhe Zhang, Xiao Wang, Le Yu, Zahra Ahmadi, Paulo S. Costa, Anthony D. DiChiara, Xuemei Cheng, Alexei Gruverman, Axel Enders, Xiaoshan Xu

Abstract: Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by t… ▽ More Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages >=20 nm, quasi 2D and polycrystalline films, with an average grain size of 50-100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications. △ Less

Submitted 9 August, 2016; originally announced August 2016.

Journal ref: Applied Physics Letters, 109, 102902 (2016)

Hydrodynamics of Domain Walls in Multiferroics: Impact on Memory Devices

Authors: James F. Scott, Donald M. Evans, J. Marty Gregg, Alexei Gruverman

Abstract: We show that switching in ferroelectric lead germanate and lead iron tantalate zirconate titanate (PZTFT) does not resemble the equilibrium domain structure evolution of the Landau-Lifshitz-Kittel model but is instead highly nonequilibrium and similar, respectively, to the Richtmyer-Meshkov instability in liquids and the Helfrich-Hursault sliding instability in liquid crystals. The resulting nano-… ▽ More We show that switching in ferroelectric lead germanate and lead iron tantalate zirconate titanate (PZTFT) does not resemble the equilibrium domain structure evolution of the Landau-Lifshitz-Kittel model but is instead highly nonequilibrium and similar, respectively, to the Richtmyer-Meshkov instability in liquids and the Helfrich-Hursault sliding instability in liquid crystals. The resulting nano-domain structures in PZTFT are circular or parabolic and involving folding bifurcations. These may have an undesirable impact on ferroelectric thin-film memoriesthat are also ferroelastic. △ Less

Submitted 11 June, 2016; originally announced June 2016.

Comments: 17 pp, three multi-part figures; 35 references; unpublished

Domain wall conductivity in semiconducting hexagonal ferroelectric TbMnO$_3$ thin films

Authors: D. J. Kim, J. G. Connell, S. S. A. Seo, A. Gruverman

Abstract: Although enhanced conductivity at ferroelectric domain boundaries has been found in BiFeO$_3$ films, Pb(Zr,Ti)O$_3$ films, and hexagonal rare-earth manganite single crystals, the mechanism of the domain wall conductivity is still under debate. Using conductive atomic force microscopy, we observe enhanced conductance at the electrically-neutral domain walls in semiconducting hexagonal ferroelectric… ▽ More Although enhanced conductivity at ferroelectric domain boundaries has been found in BiFeO$_3$ films, Pb(Zr,Ti)O$_3$ films, and hexagonal rare-earth manganite single crystals, the mechanism of the domain wall conductivity is still under debate. Using conductive atomic force microscopy, we observe enhanced conductance at the electrically-neutral domain walls in semiconducting hexagonal ferroelectric TbMnO$_3$ thin films where the structure and polarization direction are strongly constrained along the c-axis. This result indicates that domain wall conductivity in ferroelectric rare-earth manganites is not limited to charged domain walls. We show that the observed conductivity in the TbMnO$_3$ films is governed by a single conduction mechanism, namely, the back-to-back Schottky diodes model tuned by the segregation of defects. △ Less

Submitted 17 July, 2015; originally announced July 2015.

High-Symmetry Polarization Domains in Low-Symmetry Ferroelectrics

Authors: I. Lukyanchuk, P. Sharma, T. Nakajima, S. Okamura, J. F. Scott, A. Gruverman

Abstract: We present experimental evidence for hexagonal domain faceting in the ferroelectric polymer PVDF-TrFE films having the lower orthorhombic crystallographic symmetry. This effect can arise from purely electrostatic depolarizing forces. We show that in contrast to magnetic bubble shape domains where such type of deformation instability has a predominantly elliptical character, the emergence of more s… ▽ More We present experimental evidence for hexagonal domain faceting in the ferroelectric polymer PVDF-TrFE films having the lower orthorhombic crystallographic symmetry. This effect can arise from purely electrostatic depolarizing forces. We show that in contrast to magnetic bubble shape domains where such type of deformation instability has a predominantly elliptical character, the emergence of more symmetrical circular harmonics is favored in ferroelectrics with high dielectric constant. △ Less

Submitted 1 September, 2013; originally announced September 2013.

Reversal of Ferroelectric Polarization by Mechanical Means

Authors: H. Lu, C. -W. Bark, D. Esque de los Ojos, J. Alcala, C. -B. Eom, G. Catalan, A. Gruverman

Abstract: Ferroelectric materials are characterized by the presence of an electric dipole that can be reversed by application of an external electric field, a feature that is exploited in ferroelectric memories. All ferroelectrics are piezoelectric, and therefore exhibit a strong intrinsic coupling between polarization and elastic deformation - a feature widely used in piezoelectric transducers and high-dis… ▽ More Ferroelectric materials are characterized by the presence of an electric dipole that can be reversed by application of an external electric field, a feature that is exploited in ferroelectric memories. All ferroelectrics are piezoelectric, and therefore exhibit a strong intrinsic coupling between polarization and elastic deformation - a feature widely used in piezoelectric transducers and high-displacement actuators. A less explored and exploited property is flexoelectricity, i.e. the coupling between polarization and a strain gradient. Though flexoelectricity is an old concept (it was discovered in the Soviet Union almost 50 years ago), it is only with the advent of nanotechnology that its full potential is beginning to be realized, as gradients at the nanoscale can be much larger than at the macroscopic scale. Here, we demonstrate that the stress gradient generated by the tip of an atomic force microscope can be used to mechanically switch the polarization in the nanoscale volume of a ferroelectric film. This observation shows that pure mechanical force can be used as a dynamic tool for polarization control, enabling information processing in a new type of multiferroic high-density data storage devices where the memory bits are written mechanically and read electrically. △ Less

Submitted 6 October, 2011; originally announced October 2011.

Ultrathin BaTiO3 templates for multiferroic nanostructures

Authors: Xumin Chen, Seolun Yang, Ji-Hyun Kim, Hyung-Do Kim, Jae-Sung Kim, Geoffrey Rojas, Ralph Skomski, Haidong Lu, Anand Bhattacharya, Tiffany Santos, Nathan Guisinger, Matthias Bode, Alexei Gruverman, Axel Enders

Abstract: Structural, electronic and dielectric properties of high-quality ultrathin BaTiO3 films are investigated. The films, which are grown by ozone-assisted molecular beam epitaxy on Nb-doped SrTiO3 (001) substrates and having thicknesses as thin 8 unit cells (3.2 nm), are unreconstructed and atomically smooth with large crystalline terraces. A strain-driven transition to 3D island formation is observed… ▽ More Structural, electronic and dielectric properties of high-quality ultrathin BaTiO3 films are investigated. The films, which are grown by ozone-assisted molecular beam epitaxy on Nb-doped SrTiO3 (001) substrates and having thicknesses as thin 8 unit cells (3.2 nm), are unreconstructed and atomically smooth with large crystalline terraces. A strain-driven transition to 3D island formation is observed for films of of 13 unit cells thickness (5.2 nm). The high structural quality of the surfaces, together with the dielectric properties similar to bulk BaTiO3 and dominantly TiO2 surface termination, make these films suitable templates for the synthesis of high-quality metal-oxide multiferroic heterostructures for the fundamental study and exploitation of magneto-electric effects, such as a recently proposed interface effect in Fe/BaTiO3 heterostructures based on Fe-Ti interface bonds. △ Less

Submitted 5 July, 2011; originally announced July 2011.

Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale

Authors: A. Gruverman, D. Wu, H. Lu, Y. Wang, H. W. Jang, C. M. Folkman, M. Ye. Zhuravlev, D. Felker, M. Rzchowski, C. -B. Eom, E. Y. Tsymbal

Abstract: Stable and switchable polarization of ferroelectric materials opens a possibility to electrically control their functional behavior. A particularly promising approach is to employ ferroelectric tunnel junctions where the polarization reversal in a ferroelectric barrier changes the tunneling current across the junction. Here, we demonstrate the reproducible tunneling electroresistance effect usin… ▽ More Stable and switchable polarization of ferroelectric materials opens a possibility to electrically control their functional behavior. A particularly promising approach is to employ ferroelectric tunnel junctions where the polarization reversal in a ferroelectric barrier changes the tunneling current across the junction. Here, we demonstrate the reproducible tunneling electroresistance effect using a combination of Piezoresponse Force Microscopy (PFM) and Conducting Atomic Force Microscopy (C-AFM) techniques on nanometer-thick epitaxial BaTiO3 single crystal thin films on SrRuO3 bottom electrodes. Correlation between ferroelectric and electronic transport properties is established by the direct nanoscale visualization and control of polarization and tunneling current in BaTiO3 films. The obtained results show a change in resistance by about two orders of magnitude upon polarization reversal on a lateral scale of 20 nm at room temperature. These results are promising for employing ferroelectric tunnel junctions in non-volatile memory and logic devices, not involving charge as a state variable. △ Less

Submitted 8 June, 2009; originally announced June 2009.

Comments: 18 pages, 4 figures

Journal ref: Nano Lett., 2009, 9 (10), pp 3539-3543

Vortex Ferroelectric Domains

Authors: A. Gruverman, D. Wu, H. -J. Fan, I. Vrejoiu, M. Alexe, R. J. Harrison, J. F. Scott

Abstract: We show experimental switching data on microscale capacitors of lead-zirconate-titanate (PZT), which reveal time-resolved domain behavior during switching on a 100-ns scale. For small circular capacitors, an unswitched domain remains in the center while complete switching is observed in square capacitors. The observed effect is attributed to the formation of vortex domain during polarization swi… ▽ More We show experimental switching data on microscale capacitors of lead-zirconate-titanate (PZT), which reveal time-resolved domain behavior during switching on a 100-ns scale. For small circular capacitors, an unswitched domain remains in the center while complete switching is observed in square capacitors. The observed effect is attributed to the formation of vortex domain during polarization switching in circular capacitors. This dynamical behavior is modeled using the Landau-Liftshitz-Gilbert equations and found to be in detailed agreement with experiment. This simulation implies rotational motion of polarization in the xy-plane, a Heisenberg-like result supported by the recent model of Naumov and Fu [Phys. Rev. Lett. 98, 077603 (2007)], although not directly measurable by the present quasi-static measurements. △ Less

Submitted 1 February, 2008; originally announced February 2008.

Imaging Mechanism of Piezoresponse Force Microscopy in Capacitor Structures

Authors: Sergei V. Kalinin, Brian J. Rodriguez, Seung-Hyun Kim, S-K. Hong, Alexei Gruverman, Eugene A. Eliseev

Abstract: The image formation mechanism in Piezoresponse Force Microscopy (PFM) of capacitor structures is analyzed. We demonstrate that the spatial resolution is a bilinear function of film and top electrode thicknesses, and derive the corresponding analytical expressions. For many perovskites, the opposite contributions of d31 and d33 components can result in anomalous domain wall profiles. This analysi… ▽ More The image formation mechanism in Piezoresponse Force Microscopy (PFM) of capacitor structures is analyzed. We demonstrate that the spatial resolution is a bilinear function of film and top electrode thicknesses, and derive the corresponding analytical expressions. For many perovskites, the opposite contributions of d31 and d33 components can result in anomalous domain wall profiles. This analysis establishes the applicability limits of PFM for polarization dynamics studies in capacitors, and applies to other structural probes, including focused X-ray studies of capacitor structures. △ Less

Submitted 16 January, 2008; originally announced January 2008.

Comments: 20 pages, 3 figures, 2 tables, 1 Aappendix, to be submitted to Appl. Phys. Lett

Recent Developments in Electromechanical Probing on the Nanoscale: Vector and Spectroscopic Imaging, Resolution, and Molecular Orientation Mapping

Authors: Sergei V. Kalinin, S. Jesse, A. Y. Borisevich, H. N. Lee, B. J. Rodriguez, J. Hanson, A. Gruverman, E. Karapetian, M. Kachanov

Abstract: Strong coupling between electrical and mechanical phenomena and the presence of switchable polarization have enabled applications of ferroelectric materials for nonvolatile memories (FeRAM), data storage, and ferroelectric lithography. Understanding the local functionality of inorganic ferroelectrics including crystallographic orientation, piezoresponse, elasticity, and mechanisms for polarizati… ▽ More Strong coupling between electrical and mechanical phenomena and the presence of switchable polarization have enabled applications of ferroelectric materials for nonvolatile memories (FeRAM), data storage, and ferroelectric lithography. Understanding the local functionality of inorganic ferroelectrics including crystallographic orientation, piezoresponse, elasticity, and mechanisms for polarization switching, requires probing material structure and properties on the level of a single ferroelectric grain or domain. Here, I present recent studies on electromechanical, mechanical, and spectroscopic characterization of ferroelectric materials by Scanning Probe Microscopy. Three-dimensional electromechanical imaging, referred to as Vector Piezoresponse Force Microscopy, is presented. Nanoelectromechanics of PFM, including the structure of coupled electroelastic fields and tip-surface contact mechanics, is analyzed. This establishes a complete continuum mechanics description of the PFM and Atomic Force Acoustic Microscopy imaging mechanisms. Mechanism for local polarization switching is analyzed. The hysteresis loop shape is shown to be determined by the formation of the transient domain below the tip, the size of which increases with the tip bias. Spectroscopic imaging that allows relevant characteristics of switching process, such as imprint bias, pinning strength, remanent and saturation response, is introduced. Finally, resolution in PFM and vector PFM imaging of local crystallographic and molecular orientation and disorder is introduced. △ Less

Submitted 14 November, 2005; originally announced November 2005.

Comments: 8 pages, 7 figures. Extended abstract for 12th US-Japanese Seminar on Dielectric and Piezoelectric Ceramics, Annapolis, MD, November 6-9 2005

Electromechanical Imaging of Biological Systems with Sub-10 nm Resolution

Authors: Sergei V. Kalinin, B. J. Rodriguez, S. Jesse, T. Thundat, A. Gruverman

Abstract: Electromechanical imaging of tooth dentin and enamel has been performed with sub-10 nm resolution using piezoresponse force microscopy. Characteristic piezoelectric domain size and local protein fiber ordering in dentin have been determined. The shape of a single collagen fibril in enamel is visualized in real space and local hysteresis loops are measured. Because of the ubiquitous presence of p… ▽ More Electromechanical imaging of tooth dentin and enamel has been performed with sub-10 nm resolution using piezoresponse force microscopy. Characteristic piezoelectric domain size and local protein fiber ordering in dentin have been determined. The shape of a single collagen fibril in enamel is visualized in real space and local hysteresis loops are measured. Because of the ubiquitous presence of piezoelectricity in biological systems, this approach is expected to find broad application in high-resolution studies of a wide range of biomaterials. △ Less

Submitted 10 April, 2005; originally announced April 2005.

Comments: 12 pages, 4 figures, submitted for publication in Appl. Phys. Lett

Nanoelectromechanics of Polarization Switching in Piezoresponse Force Microscopy

Authors: Sergei V. Kalinin, A. Gruverman, J. Shin, A. P. Baddorf, E. Karapetian, M. Kachanov

Abstract: Nanoscale polarization switching in ferroelectric materials by Piezoresponse Force Microscopy (PFM) in weak and strong indentation limits is analyzed using exact solutions for electrostatic and coupled electroelastic fields below the tip. It is proposed that the tip-induced domain switching can be mapped on the Landau theory of phase transitions with the domain size as an order parameter. For a… ▽ More Nanoscale polarization switching in ferroelectric materials by Piezoresponse Force Microscopy (PFM) in weak and strong indentation limits is analyzed using exact solutions for electrostatic and coupled electroelastic fields below the tip. It is proposed that the tip-induced domain switching can be mapped on the Landau theory of phase transitions with the domain size as an order parameter. For a point charge interacting with a ferroelectric surface, switching of both first and second order is possible depending on the charge-surface separation. For a realistic tip shape, the domain nucleation process is first order in charge magnitude and polarization switching occurs only above a critical tip bias. In pure ferroelectric or ferroelastic switching, the late stages of the switching process can be described using point charge/force model and arbitrarily large domains can be created; however, the description of the early stages of nucleation process when domain size is comparable with the tip radius of curvature requires exact field structure to be taken into account. △ Less

Submitted 16 June, 2004; originally announced June 2004.

Comments: 16 pages, 3 figures, expanded version of paper submitted to PRL