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On the fractal dimension of non-Newtonian Hele-Shaw flow subject to Saffman-Taylor instability
Authors:
J. Adriazola,
B. Gu,
L. Cummings,
L. Kondic
Abstract:
We introduce a discrete numerical method based on the diffusion-limited aggregation (DLA) approach to simulate two-fluid Hele-Shaw flow subject to the Saffman-Taylor interfacial instability, in the case where the displaced fluid is non-Newtonian. Focusing on fluids for which the most relevant non-Newtonian aspect of the thin-gap flow is shear-thinning, we introduce a history-dependent aspect into…
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We introduce a discrete numerical method based on the diffusion-limited aggregation (DLA) approach to simulate two-fluid Hele-Shaw flow subject to the Saffman-Taylor interfacial instability, in the case where the displaced fluid is non-Newtonian. Focusing on fluids for which the most relevant non-Newtonian aspect of the thin-gap flow is shear-thinning, we introduce a history-dependent aspect into the algorithm, modeling shear-rate-dependent fluid viscosity. The main finding is that the morphology of the emerging patterns, characterized by the fractal dimension, is modified in a nontrivial manner by the shear-thinning nature of the displaced fluid. In particular, we consistently find that shear-thinning leads to the formation of patterns characterized by a smaller fractal dimension, compared to the corresponding Newtonian fluid.
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Submitted 8 July, 2024;
originally announced July 2024.
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Superconducting and topological properties of compound Lu$_4$H$_7$N
Authors:
Zheng-Wei Liao,
Xin-Wei Yi,
Jing-Yang You,
Bo Gu,
Gang Su
Abstract:
A recent experiment has reported a nitrogen-doped lutetium hydride acheving a remarkable Tc of 294 K at just 1 GPa, significantly reducing the required pressure for obtaining room temperature superconductivity. However, subsequent experimental and theoretical investigations have encountered difficulties in replicating these results, leaving the structure of this Lu-H-N compound shrouded in uncerta…
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A recent experiment has reported a nitrogen-doped lutetium hydride acheving a remarkable Tc of 294 K at just 1 GPa, significantly reducing the required pressure for obtaining room temperature superconductivity. However, subsequent experimental and theoretical investigations have encountered difficulties in replicating these results, leaving the structure of this Lu-H-N compound shrouded in uncertainty. Here, we propose a stable structure for Lu$_4$H$_7$N employing first-principles calculations. Our calculations reveal that Lu$_4$H$_7$N has a Tc of 1.044 K, which can be substantially enhanced to 11.721 K at 150 GPa, due to the increasing electron-phonon coupling (EPC). Notably, we delve into the nontrivial Z2 band topology of Lu$_4$H$_7$N, featuring discernible surface states near the Fermi level, and we explore its spin Hall conductivity characteristics. Furthermore, we find that the electron doping can enhance the EPC strength and Tc of Lu$_4$H$_7$N, such as the Lu$_4$H$_7$O structure we predict simulating electron doping for Lu$_4$H$_7$N with an impressive Tc of 3.837 K. This work demonstrates the coexistence of superconducting and topological properties in a Lu-H-N system compound, which holds the promise of guiding the search for novel topological superconducting materials.
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Submitted 14 May, 2024;
originally announced May 2024.
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Antiferromagnetic Ground State, Charge Density Waves and Oxygen Vacancies Induced Metal-Insulator Transition in Pressurized La$_{3}$Ni$_{2}$O$_{7}$
Authors:
Xin-Wei Yi,
Ying Meng,
Jia-Wen Li,
Zheng-Wei Liao,
Jing-Yang You,
Bo Gu,
Gang Su
Abstract:
La$_{3}$Ni$_{2}$O$_{7}$ has garnered widespread interest recently due to its high-temperature superconductivity under pressure, accompanied by charge density wave (CDW) ordering and metal-insulator (MI) transitions in the phase diagram. Here, we reveal with comprehensive calculations that La$_{3}$Ni$_{2}$O$_{7}$ possesses an antiferromagnetic ground state under both low and high pressures, with th…
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La$_{3}$Ni$_{2}$O$_{7}$ has garnered widespread interest recently due to its high-temperature superconductivity under pressure, accompanied by charge density wave (CDW) ordering and metal-insulator (MI) transitions in the phase diagram. Here, we reveal with comprehensive calculations that La$_{3}$Ni$_{2}$O$_{7}$ possesses an antiferromagnetic ground state under both low and high pressures, with the strong Fermi surface nesting contributed by the flat band that leads to phonon softening and electronic instabilities. Several stable CDW orders with oxygen octahedral distortions are identified, which can trigger the MI transitions. The estimated CDW transition temperature ($\approx$120 K) at ambient pressure agrees nicely with experimental results. In the presence of apical oxygen vacancies, we identify two different phases, say, half distortion and full distortion phases, respectively, and their competition can lead to a pressure-induced MI transition, in good agreement with experimental observations. In addition, we find that the electron-phonon coupling is too small to contribute to superconductivity. These results appear to indicate an unconventional superconducting pairing mechanism mediated by antiferromagnetic fluctuations. A phase diagram that is consistent with the experimental results is given. The present results not only explain the origins of experimentally observed CDW and MI transitions, but also provide insight for deeply understanding the properties like superconductivity, CDW and the role of oxygen vacancies in pressurized La$_{3}$Ni$_{2}$O$_{7}$.
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Submitted 18 March, 2024;
originally announced March 2024.
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Room temperature ferromagnetic semiconductors through metal-semiconductor transition in monolayer MnSe2
Authors:
Jia-Wen Li,
Gang Su,
Bo Gu
Abstract:
To realize room temperature ferromagnetic semiconductors is still a challenge in spintronics. Recent experiments have obtained two-dimensional (2D) room temperature ferromagnetic metals, such as monolayer MnSe2. In this paper, we proposed a way to obtain room temperature ferromagnetic semiconductors through metal-semiconductor transition. By the density functional theory calculations, a room tempe…
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To realize room temperature ferromagnetic semiconductors is still a challenge in spintronics. Recent experiments have obtained two-dimensional (2D) room temperature ferromagnetic metals, such as monolayer MnSe2. In this paper, we proposed a way to obtain room temperature ferromagnetic semiconductors through metal-semiconductor transition. By the density functional theory calculations, a room temperature ferromagnetic semiconductor is obtained in monolayer MnSe2 with a few percent tensile strains, where a metal-semiconductor transition occurs with 2.2% tensile stain. The tensile stains raise the energy of d orbitals of Mn atoms and p orbitals of Se atoms near the Fermi level, making the Fermi level sets in the energy gap of bonding and antibonding states of these p and d orbitals, and opening a small band gap. The room temperature ferromagnetic semiconductors are also obtained in the heterostructures MnSe2/X (X = Al2Se3, GaSe, SiH, and GaP), where metal-semiconductor transition happens due to the tensile strains by interface of heterostructures. In addition, a large magneto-optical Kerr effect (MOKE) is obtained in monolayer MnSe2 with tensile strain and MnSe2-based heterostructures. Our theoretical results pave a way to obtain room temperature magnetic semiconductors from experimentally obtained 2D room temperature ferromagnetic metals through metal-semiconductor transitions.
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Submitted 23 December, 2023;
originally announced December 2023.
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High Curie temperature and high hole mobility in diluted magnetic semiconductors (B, Mn)X (X = N, P, As, Sb)
Authors:
Xiang Li,
Jia-Wen Li,
Jing-Yang You,
Gang Su,
Bo Gu
Abstract:
Doping nonmagnetic semiconductors with magnetic impurities is a feasible way to obtain diluted magnetic semiconductors (DMSs). It is generally accepted that for the most extensively studied DMS, (Ga, Mn)As, its highest Curie temperature T$_{\text{C}}$ was achieved at 200 K with a Mn concentration of approximately 16% in experiments. A recent experiment reported record-breaking high electron and ho…
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Doping nonmagnetic semiconductors with magnetic impurities is a feasible way to obtain diluted magnetic semiconductors (DMSs). It is generally accepted that for the most extensively studied DMS, (Ga, Mn)As, its highest Curie temperature T$_{\text{C}}$ was achieved at 200 K with a Mn concentration of approximately 16% in experiments. A recent experiment reported record-breaking high electron and hole mobilities in the semiconductor BAs [Science 377, 437 (2022)]. Since BAs shares the same zinc-blende structure with GaAs, here we predict four DMSs (B, Mn)X (X = N, P, As, Sb) by density functional theory calculations. Our results indicate that a significantly higher T$_{\text{C}}$ in the range of 254 K to 300 K for (B, Mn)As with a Mn concentration of around 15.6%, and even higher T$_{\text{C}}$ values above the room temperature for (B, Mn)N and (B, Mn)P with a Mn concentration exceeding 12.5%. Furthermore, we have predicted a large hole mobility of 1561 cm$^{\text{2}}$V$^{\text{-1}}$s$^{\text{-1}}$ at 300 K for (B, Mn)As with a Mn concentration of about 3.7%, which is three orders of magnitude larger than the hole mobility of 4 cm$^{\text{2}}$V$^{\text{-1}}$s$^{\text{-1}}$ at 300 K observed in the experiment for (Ga, Mn)As. Our findings predict the emergence of a new family of DMS, (B, Mn)X, and are expected to stimulate both experimental and theoretical studies of the DMS with high T$_{\text{C}}$ and high mobilities.
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Submitted 19 November, 2023;
originally announced November 2023.
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High temperature ferrimagnetic semiconductors by spin-dependent doping in high temperature antiferromagnets
Authors:
Jia-Wen Li,
Gang Su,
Bo Gu
Abstract:
To realize room temperature ferromagnetic (FM) semiconductors is still a challenge in spintronics. Many antiferromagnetic (AFM) insulators and semiconductors with high Neel temperature $T_N$ are obtained in experiments, such as LaFeO$_3$, BiFeO$_3$, etc. High concentrations of magnetic impurities can be doped into these AFM materials, but AFM state with very tiny net magnetic moments was obtained…
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To realize room temperature ferromagnetic (FM) semiconductors is still a challenge in spintronics. Many antiferromagnetic (AFM) insulators and semiconductors with high Neel temperature $T_N$ are obtained in experiments, such as LaFeO$_3$, BiFeO$_3$, etc. High concentrations of magnetic impurities can be doped into these AFM materials, but AFM state with very tiny net magnetic moments was obtained in experiments, because the magnetic impurities were equally doped into the spin up and down sublattices of the AFM materials. Here, we propose that the effective magnetic field provided by a FM substrate could guarantee the spin-dependent doping in AFM materials, where the doped magnetic impurities prefer one sublattice of spins, and the ferrimagnetic (FIM) materials are obtained. To demonstrate this proposal, we study the Mn-doped AFM insulator LaFeO$_3$ with FM substrate of Fe metal by the density functional theory (DFT) calculations. It is shown that the doped magnetic Mn impurities prefer to occupy one sublattice of AFM insulator, and introduce large magnetic moments in La(Fe,Mn)O$_3$. For the AFM insulator LaFeO$_3$ with high $T_N$ = 740 K, several FIM semiconductors with high Curie temperature $T_C >$ 300 K and the band gap less than 2 eV are obtained by DFT calculations, when 1/8 or 1/4 Fe atoms in LaFeO$_3$ are replaced by the other 3d, 4d transition metal elements. The large magneto-optical Kerr effect (MOKE) is obtained in these LaFeO$_3$-based FIM semiconductors. In addition, the FIM semiconductors with high $T_C$ are also obtained by spin-dependent doping in some other AFM materials with high $T_N$, including BiFeO$_3$, SrTcO$_3$, CaTcO$_3$, etc. Our theoretical results propose a way to obtain high $T_C$ FIM semiconductors by spin-dependent doping in high $T_N$ AFM insulators and semiconductors.
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Submitted 13 October, 2023;
originally announced October 2023.
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Chiral magnetism in lithium-decorated monolayer CrTe$_{2}$: Interplay between Dzyaloshinskii-Moriya interaction and higher-order interactions
Authors:
Weiyi Pan,
Changsong Xu,
Xueyang Li,
Zhiming Xu,
Boyu Liu,
Bing-Lin Gu,
Wenhui Duan
Abstract:
Chiral magnetic states in two-dimensional (2D) layered noncentrosymmetric magnets, which are promising advanced spintronic materials, are usually attributed to Dzyaloshinskii-Moriya interactions (DMI). However, the role of underlying higher-order spin couplings in determining the properties of chiral spin textures has much less reported. In this work, taking the lithium-decorated monolayer CrTe…
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Chiral magnetic states in two-dimensional (2D) layered noncentrosymmetric magnets, which are promising advanced spintronic materials, are usually attributed to Dzyaloshinskii-Moriya interactions (DMI). However, the role of underlying higher-order spin couplings in determining the properties of chiral spin textures has much less reported. In this work, taking the lithium-decorated monolayer CrTe$_{2}$ (monolayer LiCrTe$_{2}$) as an example, we develop a first-principles-based comprehensive spin model constructed by using the symmetry-adapted cluster expansion method. Based on this spin model, we identify the ground state of monolayer LiCrTe$_{2}$ as a chiral spin spiral state, which can further assemble macroscopic chiral labyrinth domains (LD) under zero-field conditions as well as evolve into skyrmions under a finite magnetic field. Moreover, higher-order biquadratic and three-site interactions are identified to be responsible for modulating both the size and the field stability of the spin spiral state. Our study sheds light on complex magnetic couplings in 2D magnets.
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Submitted 17 March, 2024; v1 submitted 11 August, 2023;
originally announced August 2023.
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Superconducting, topological and transport properties of kagome metals CsTi$ _{3} $Bi$ _{5} $ and RbTi$ _{3} $Bi$ _{5} $
Authors:
Xin-Wei Yi,
Zheng-Wei Liao,
Jing-Yang You,
Bo Gu,
Gang Su
Abstract:
The recently discovered ATi$_3$Bi$_5$ (A=Cs, Rb) exhibit intriguing quantum phenomena including superconductivity, electronic nematicity, and abundant topological states, which provide promising platforms for studying kagome superconductivity, band topology, and charge orders. In this work, we comprehensively study various properties of ATi$_3$Bi$_5$ including superconductivity under pressure and…
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The recently discovered ATi$_3$Bi$_5$ (A=Cs, Rb) exhibit intriguing quantum phenomena including superconductivity, electronic nematicity, and abundant topological states, which provide promising platforms for studying kagome superconductivity, band topology, and charge orders. In this work, we comprehensively study various properties of ATi$_3$Bi$_5$ including superconductivity under pressure and doping, band topology under pressure, thermal conductivity, heat capacity, electrical resistance, and spin Hall conductivity (SHC) using first-principles calculations. Calculated superconducting transition temperature ($\mathrm{ T_{c}}$) of CsTi$_3$Bi$_5$ and RbTi$_3$Bi$_5$ at ambient pressure are about 1.85 and 1.92K. When subject to pressure, $\mathrm{ T_{c}}$ of CsTi$_3$Bi$_5$ exhibits a special valley and dome shape, which arises from quasi-two-dimensional to three-dimensional isotropic compression within the context of an overall decreasing trend. Furthermore, $\mathrm{ T_{c}}$ of RbTi$_3$Bi$_5$ can be effectively enhanced up to 3.09K by tuning the kagome van Hove singularities (VHSs) and flat band through doping. Pressure can also induce abundant topological surface states at the Fermi energy ($\mathrm{E}_{\mathrm{F}}$) and tune VHSs across $\mathrm{E}_{\mathrm{F}}$. Additionally, our transport calculations are in excellent agreement with recent experiments, confirming the absence of charge density wave. Notably, SHC of CsTi$_3$Bi$_5$ can reach as large as 226$ \hbar\cdot (e\cdot Ω\cdot cm) ^{-1} $ at $\mathrm{E}_{\mathrm{F}}$. Our work provides a timely and detailed analysis of the rich physical properties for ATi$_3$Bi$_5$, offering valuable insights for further explorations and understandings on these intriguing superconducting materials.
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Submitted 30 June, 2023;
originally announced June 2023.
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Floquet theory and computational method for the optical absorption of laser-dressed solids
Authors:
Vishal Tiwari,
Bing Gu,
Ignacio Franco
Abstract:
Recent advances in laser technology now enable engineering the electronic structure of matter through strong light-matter interactions. However, the effective physicochemical properties of these laser-dressed nonequilibrium materials are not well understood. Here we develop a general theory that now enables modeling and interpreting the linear optical absorption of solids that are dressed by light…
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Recent advances in laser technology now enable engineering the electronic structure of matter through strong light-matter interactions. However, the effective physicochemical properties of these laser-dressed nonequilibrium materials are not well understood. Here we develop a general theory that now enables modeling and interpreting the linear optical absorption of solids that are dressed by light of arbitrary strength and photon energy. The theory applies to any crystalline solid and quantum materials. In the theory, the dressing of Bloch electrons by the driving laser is treated exactly using Floquet theory. The effective optical properties of this laser-dressed material are probed through a weak laser whose effects are captured to first order in perturbation theory. Remarkably, in this nonequilibrium system the time- and space-periodic Floquet-Bloch modes play the role of the pristine eigenstates of matter as the optical absorption is seen to emerge from transitions among them. We implement the theoretical framework into a code FloqticS: Floquet optics in Solids) available through Github. To isolate the emergent phenomenology, we performed computations in a model solid with a cosine-shaped lattice potential driven by strong nonresonant light. The computations recover the dynamical Franz-Keldysh effect and identify novel dramatic changes in the optical absorption upon increasing the amplitude of the driving laser. The Floquet replicas open absorption sidebands separated by integer multiples of the drive photon energy. The hybridization of the Floquet-Bloch modes, create intense low-frequency absorption and stimulated emissions, and dips in the absorption spectrum. We assign these emerging effects as purely-optical tell-tale signatures of the Floquet-Bloch modes. These advances can be used to model, control and characterize the response properties of laser-dressed materials.
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Submitted 3 August, 2023; v1 submitted 16 May, 2023;
originally announced May 2023.
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Nonlinear electronic stopping of negatively-charged particles in liquid water
Authors:
Natalia E. Koval,
Fabiana Da Pieve,
Bin Gu,
Daniel Muñoz-Santiburcio,
Jorge Kohanoff,
Emilio Artacho
Abstract:
We present real-time time-dependent density-functional-theory calculations of the electronic stopping power for negative and positive projectiles (electrons, protons, antiprotons and muons) moving through liquid water. After correction for finite mass effects, the nonlinear stopping power obtained in this work is significantly different from the previously known results from semi-empirical calcula…
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We present real-time time-dependent density-functional-theory calculations of the electronic stopping power for negative and positive projectiles (electrons, protons, antiprotons and muons) moving through liquid water. After correction for finite mass effects, the nonlinear stopping power obtained in this work is significantly different from the previously known results from semi-empirical calculations based on the dielectric response formalism. Linear-nonlinear discrepancies are found both in the maximum value of the stopping power and the Bragg peak's position. Our results indicate the importance of the nonlinear description of electronic processes, particularly for electron projectiles, which are modeled here as classical point charges. Our findings also confirm the expectation that the quantum nature of the electron projectile should substantially influence the stopping power around the Bragg peak and below.
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Submitted 28 February, 2023;
originally announced February 2023.
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Two-dimensional Heisenberg models with materials-dependent superexchange interactions
Authors:
Jia-Wen Li,
Zhen Zhang,
Jing-Yang You,
Bo Gu,
Gang Su
Abstract:
The two-dimensional (2D) van der Waals ferromagnetic semiconductors, such as CrI$_3$ and Cr$_2$Ge$_2$Te$_6$, and the 2D ferromagnetic metals, such as Fe$_3$GeTe$_2$ and MnSe$_2$, have been obtained in recent experiments and attracted a lot of attentions. The superexchange interaction has been suggested to dominate the magnetic interactions in these 2D magnetic systems. In the usual theoretical stu…
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The two-dimensional (2D) van der Waals ferromagnetic semiconductors, such as CrI$_3$ and Cr$_2$Ge$_2$Te$_6$, and the 2D ferromagnetic metals, such as Fe$_3$GeTe$_2$ and MnSe$_2$, have been obtained in recent experiments and attracted a lot of attentions. The superexchange interaction has been suggested to dominate the magnetic interactions in these 2D magnetic systems. In the usual theoretical studies, the expression of the 2D Heisenberg models were fixed by hand due to experiences. Here, we propose a method to determine the expression of the 2D Heisenberg models by counting the possible superexchange paths with the density functional theory (DFT) and Wannier function calculations. With this method, we obtain a 2D Heisenberg model with six different nearest-neighbor exchange coupling constants for the 2D ferromagnetic metal Cr$_3$Te$_6$, which is very different for the crystal structure of Cr atoms in Cr$_3$Te$_6$. The calculated Curie temperature Tc = 328 K is close to the Tc = 344 K of 2D Cr$_3$Te$_6$ reported in recent experiment. In addition, we predict two stable 2D ferromagnetic semiconductors Cr$_3$O$_6$ and Mn$_3$O$_6$ sharing the same crystal structure of Cr$_3$Te$_6$. The similar Heisenberg models are obtained for 2D Cr$_3$O$_6$ and Mn$_3$O$_6$, where the calculated Tc is 218 K and 208 K, respectively. Our method offers a general approach to determine the expression of Heisenberg models for these 2D magnetic semiconductors and metals, and builds up a solid basis for further studies.
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Submitted 5 January, 2023;
originally announced January 2023.
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Observation of Flat Band, Dirac Nodal Lines and Topological Surface States in Kagome Superconductor CsTi$_3$Bi$_5$
Authors:
Jiangang Yang,
Yuyang Xie,
Zhen Zhao,
Xinwei Yi,
Taimin Miao,
Hailan Luo,
Hao Chen,
Bo Liang,
Wenpei Zhu,
Yuhan Ye,
Jing-Yang You,
Bo Gu,
Shenjin Zhang,
Fengfeng Zhang,
Feng Yang,
Zhimin Wang,
Qinjun Peng,
Hanqing Mao,
Guodong Liu,
Zuyan Xu,
Hui Chen,
Haitao Yang,
Gang Su,
Hongjun Gao,
Lin Zhao
, et al. (1 additional authors not shown)
Abstract:
A kagome lattice of 3d transition metals hosts flat bands, Dirac fermions and saddle points. It provides a versatile platform for achieving topological superconductivity, anomalous Hall effect, unconventional density wave order and quantum spin liquid when the strong correlation, spin-orbit coupling or magnetic order are involved in such a lattice. Here, using laser-based angle-resolved photoemiss…
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A kagome lattice of 3d transition metals hosts flat bands, Dirac fermions and saddle points. It provides a versatile platform for achieving topological superconductivity, anomalous Hall effect, unconventional density wave order and quantum spin liquid when the strong correlation, spin-orbit coupling or magnetic order are involved in such a lattice. Here, using laser-based angle-resolved photoemission spectroscopy in combination with density functional theory calculations, we investigate the electronic structure of the newly discovered kagome superconductor CsTi$_3$Bi$_5$, which is isostructural to the AV$_3$Sb$_5$ (A=K, Rb or Cs) kagome superconductors and possesses a perfect two-dimensional kagome network of Titanium. We directly observed a strikingly flat band derived from the local destructive interferences of Bloch wave functions within the kagome lattices. We also identify the type-II Dirac nodal loops around the Brillouin zone center, the type-III Dirac nodal loops around the zone corners and type-III Dirac nodal lines along the k$_z$ direction. In addition, around the Brillouin zone center, Z2 nontrivial topological surface states are also observed which is formed from the band inversion due to strong spin orbital coupling. The simultaneous existence of such multi-sets of nontrivial band structures in one kagome superconductor not only provides good opportunities to study related physics in the kagome lattice but also makes CsTi$_3$Bi$_5$ an ideal system to realize noval quantum phenomena by manipulating its chemical potential with chemical doping or pressure.
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Submitted 8 December, 2022;
originally announced December 2022.
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Topological superconductivity and large spin Hall effect in the kagome family Ti6X4 (X = Bi, Sb, Pb, Tl, In)
Authors:
Xin-Wei Yi,
Zheng-Wei Liao,
Jing-Yang You,
Bo Gu,
Gang Su
Abstract:
Topological superconductors (TSC) become a focus of research due to the accompanying Majorana fermions. However, the experimentally reported TSC are extremely rare. The recent experiments reported the kagome TSC AV$_{3}$Sb$_{5}$ (A=K, Rb, Cs), which exhibit unique superconductivity, topological surface states (TSS), and Majorana bound states. More recently, the first titanium-based kagome supercon…
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Topological superconductors (TSC) become a focus of research due to the accompanying Majorana fermions. However, the experimentally reported TSC are extremely rare. The recent experiments reported the kagome TSC AV$_{3}$Sb$_{5}$ (A=K, Rb, Cs), which exhibit unique superconductivity, topological surface states (TSS), and Majorana bound states. More recently, the first titanium-based kagome superconductor CsTi$ _{3} $Bi$ _{5} $ with nontrivial topology was successfully synthesized as a perspective TSC. Given that Cs contributes little to the electronic structures of CsTi$ _{3} $Bi$ _{5} $ and binary compounds may be easier to be synthesized, here, by density functional theory calculations, we predict five stable non-magnetic kagome compounds Ti$ _{6} $X$ _{4} $ (X = Bi, Sb, Pb, Tl, In) which exhibit superconductivity with critical temperature Tc = 3.8$ - $5.1 K, nontrivial $\mathbb{Z}$$_2$ band topology, and TSS close to the Fermi level. In addition, the large intrinsic spin Hall effect is obtained in Ti$ _{6} $X$ _{4} $, which is caused by gapped Dirac nodes and nodal lines due to a strong spin-orbit coupling. This work offers new platforms for TSC and spintronic devices.
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Submitted 21 November, 2022;
originally announced November 2022.
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Family of binary transition metal pnictide superconductors
Authors:
Zheng-Wei Liao,
Xin-Wei Yi,
Jing-Yang You,
Bo Gu,
Gang Su
Abstract:
Superconductivity in transition metal nitrides (TMNs) has been investigated for a long time, such as zirconium nitride (ZrN) with a superconducting transition temperature Tc of 10 K. Recently, a phase diagram has been revealed in ZrNx with different nitrogen concentrations, which is very similar to that of high-temperature copper oxide superconductors. Here, we study the TMNs with face-centered cu…
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Superconductivity in transition metal nitrides (TMNs) has been investigated for a long time, such as zirconium nitride (ZrN) with a superconducting transition temperature Tc of 10 K. Recently, a phase diagram has been revealed in ZrNx with different nitrogen concentrations, which is very similar to that of high-temperature copper oxide superconductors. Here, we study the TMNs with face-centered cubic lattice, where ZrN and HfN have been experimentally obtained, and predict eight new stable superconductors by the first-principle calculations. We find that CuN has a high Tc of 30 K with a very strong electron-phonon coupling (EPC) strength. In contrast to ZrN, CuN has softening acoustic phonons at the high symmetry point L, which accounts for its much stronger EPC. In addition, the highly symmetrical structure leads to topological protected nodal points and lines, such as the hourglass Weyl loop in kx/y/z = 0 plane and Weyl points in kx/y/z = 2π/a plane, as well as quadratic band touch at Γ point. CuN could be a topological superconductor. Our results expand the transition metal nitrides superconductor family and would be helpful to guide the search for high temperature topological superconductors.
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Submitted 6 July, 2023; v1 submitted 5 August, 2022;
originally announced August 2022.
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Magnetic Properties and Electronic Configurations of Mn Ions in the Diluted Magnetic Semiconductor Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ Studied by X-ray Magnetic Circular Dichroism and Resonant Inelastic X-ray Scattering
Authors:
H. Suzuki,
G. Q. Zhao,
J. Okamoto,
S. Sakamoto,
Z. -Y. Chen,
Y. Nonaka,
G. Shibata,
K. Zhao,
B. J. Chen,
W. -B. Wu,
F. -H. Chang,
H. -J. Lin,
C. -T. Chen,
A. Tanaka,
M. Kobayashi,
Bo Gu,
S. Maekawa,
Y. J. Uemura,
C. Q. Jin,
D. J. Huang,
A. Fujimori
Abstract:
The magnetic properties and the electronic excitations of the new diluted magnetic semiconductor Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ have been studied by x-ray magnetic circular dichroism (XMCD) and resonant inelastic x-ray scattering (RIXS) at the Mn $L_{2,3}$ edge. The sum rule analysis of the XMCD spectra yields the net spin moment of $0.45μ_{\text{B}}$/Mn and the small orbital…
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The magnetic properties and the electronic excitations of the new diluted magnetic semiconductor Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ have been studied by x-ray magnetic circular dichroism (XMCD) and resonant inelastic x-ray scattering (RIXS) at the Mn $L_{2,3}$ edge. The sum rule analysis of the XMCD spectra yields the net spin moment of $0.45μ_{\text{B}}$/Mn and the small orbital moment of $0.05μ_{\text{B}}$/Mn. This indicates that the Mn atoms are in the high-spin configurations of $d^{5}$, whereas the presence of competing ferromagnetic and antiferromagnetic interactions between the Mn ions reduces the net spin moment. RIXS spectra show broad peaks from 1 to 6 eV energy loss, which originate from the $d$-$d$ crystal field excitations of the Mn ions. Based on a comparison of the RIXS line shapes with those of Ga$_{1-x}$Mn$_{x}$As, we conclude that the ground state of Mn in Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ consists not only of the charge-transferred $3d^{5}\underline{L}$ electron configuration ($\underline{L}$: ligand hole) with weakly bound holes as in Ga$_{1-x}$Mn$_{x}$As, but also of the pure $3d^{5}$ configuration with free holes.
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Submitted 31 January, 2022;
originally announced January 2022.
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Emergent magnetic states due to stacking and strain in the van der Waals magnetic trilayer CrI3
Authors:
Zhen Zhang,
Jing-Yang You,
Bo Gu,
Gang Su
Abstract:
Recently, three different magnetic states were observed experimentally in trilayer CrI3 under pressure,including ferromagnetic (FM)-upupup, FM-downupdown and FM-upupdown. To reveal the nature of the observed three magnetic states, we studied the magnetic properties of four possible stacking structures in trilayer CrI3: I (rhombohedral), II (monoclinic), III (hexagonal) and IV (triclinic). We find…
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Recently, three different magnetic states were observed experimentally in trilayer CrI3 under pressure,including ferromagnetic (FM)-upupup, FM-downupdown and FM-upupdown. To reveal the nature of the observed three magnetic states, we studied the magnetic properties of four possible stacking structures in trilayer CrI3: I (rhombohedral), II (monoclinic), III (hexagonal) and IV (triclinic). We find that all four stacking structures possess the FM-upupup ground state. After applying a few strains, the FM-downupdown becomes the ground state in II and III structures, and the FM-upupdown is preferred in IV structure, while the FM-upupup persists in I structure. Our results unveil that the three magnetic states observed in trilayer CrI3 may correspond to different stacking structures with small tensile strains, which can well interpret the experimentally obtained pressure dependent interlayer coupling and Curie temperature. Our present study paves a way to design the magnetic multilayers with required magnetic states by tuning stacking and strain.
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Submitted 5 November, 2021;
originally announced November 2021.
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Enhanced superconductivity in C-S-H compounds at high pressure
Authors:
Zheng-Wei Liao,
Zhen Zhang,
Jing-Yang You,
Bo Gu,
Gang Su
Abstract:
Recently, the superconducting transition temperature Tc = 287 K has been experimentally obtained in the material composed of carbon, sulfur, and hydrogen under the high pressure of 267 GPa. The material structure is unknown yet, where the carbon and sulfur were added at a molar ratio of 1:1. Here, fixing the molar ratio of C : S = 1:1, we studied several possible C-S-H structures, and found a new…
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Recently, the superconducting transition temperature Tc = 287 K has been experimentally obtained in the material composed of carbon, sulfur, and hydrogen under the high pressure of 267 GPa. The material structure is unknown yet, where the carbon and sulfur were added at a molar ratio of 1:1. Here, fixing the molar ratio of C : S = 1:1, we studied several possible C-S-H structures, and found a new stable structure C2S2H4 using the first-principles calculations. The C2S2H4 shows an insulator-to-metal transition and the superconducting ground state at the pressure of 64 GPa, and its Tc can reach 16.5 K at 300 GPa. In addition, we found another stable structure of C2S3H4, whose Tc is 47.4 K at 300 GPa. The calculations show that the added S atom in C2S3H4 breaks part of C-H bonds in C2S2H4, makes the vibration of H atom at a lower frequency, and thus enhances the electro-phonon coupling and Tc. Our results suggest that the molar ratio of C:S lower than 1:1 in the C-S-H systems may be favorable to enhance Tc. This can be useful to figure out the structure of the C-S-H material with room temperature Tc in the recent experiment.
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Submitted 5 November, 2021;
originally announced November 2021.
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Network-based membrane filters: Influence of network and pore size variability on filtration performance
Authors:
Binan Gu,
Lou Kondic,
Linda J. Cummings
Abstract:
We model porous membrane filters as networks of connected cylindrical pores via a random network generation protocol, and their initial pore radii via a uniform distribution of widths that vary about some mean value. We investigate the influence of network and pore size (radius) variations on the performance of membrane filters that undergo adsorptive fouling. We find that membrane porosity variat…
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We model porous membrane filters as networks of connected cylindrical pores via a random network generation protocol, and their initial pore radii via a uniform distribution of widths that vary about some mean value. We investigate the influence of network and pore size (radius) variations on the performance of membrane filters that undergo adsorptive fouling. We find that membrane porosity variations, independently of whether induced by variations of the pore radii or of the random pore network, are an important factor determining membrane filter performance. Network and pore size variations still play a role, in particular if pore radii variations are significant. To quantify the influence of these variations, we compare the performance metrics of networks built from pores of variable radii to their (equal porosity) counterparts built from pores of uniform radius. We show that the effect of pore radii variations is to increase throughput, but also to reduce foulant control.
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Submitted 24 February, 2022; v1 submitted 28 October, 2021;
originally announced November 2021.
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Basic formulation and first-principles implementation of nonlinear magneto-optical effects
Authors:
Haowei Chen,
Meng Ye,
Nianlong Zou,
Bing-lin Gu,
Yong Xu,
Wenhui Duan
Abstract:
First-principles calculation of nonlinear magneto-optical effects has become an indispensable tool to reveal the geometric and topological nature of electronic states and to understand light-matter interactions. While intriguingly rich physics could emerge in magnetic materials, further methodological developments are required to deal with time-reversal symmetry breaking, due to the degeneracy and…
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First-principles calculation of nonlinear magneto-optical effects has become an indispensable tool to reveal the geometric and topological nature of electronic states and to understand light-matter interactions. While intriguingly rich physics could emerge in magnetic materials, further methodological developments are required to deal with time-reversal symmetry breaking, due to the degeneracy and gauge problems caused by symmetry and the low-frequency divergence problem in the existing calculation formalism. Here we present a gauge-covariant and low-frequency convergent formalism for the first-principles computation. Remarkably, this formalism generally works for both non-magnetic and magnetic materials with or without band degeneracy. Reliability and capability of our method are demonstrated by studying example materials (i.e., bilayers of MnBi$_2$Te$_4$ and CrI$_3$) and comparing with published results. Moreover, an importance correction term that ensures gauge covariance of degenerate states is derived, whose influence on physical responses is systematically checked. Our method enables computation of nonlinear magneto-optical effects in magnetic materials and paves the way for exploring rich physics created by the interplay of light and magnetism.
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Submitted 26 October, 2021;
originally announced October 2021.
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Heterogeneous relational message passing networks for molecular dynamics simulations
Authors:
Zun Wang,
Chong Wang,
Sibo Zhao,
Yong Xu,
Shaogang Hao,
Chang Yu Hsieh,
Bing-Lin Gu,
Wenhui Duan
Abstract:
With many frameworks based on message passing neural networks proposed to predict molecular and bulk properties, machine learning methods have tremendously shifted the paradigms of computational sciences underpinning physics, material science, chemistry, and biology. While existing machine learning models have yielded superior performances in many occasions, most of them model and process molecula…
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With many frameworks based on message passing neural networks proposed to predict molecular and bulk properties, machine learning methods have tremendously shifted the paradigms of computational sciences underpinning physics, material science, chemistry, and biology. While existing machine learning models have yielded superior performances in many occasions, most of them model and process molecular systems in terms of homogeneous graph, which severely limits the expressive power for representing diverse interactions. In practice, graph data with multiple node and edge types is ubiquitous and more appropriate for molecular systems. Thus, we propose the heterogeneous relational message passing network (HermNet), an end-to-end heterogeneous graph neural networks, to efficiently express multiple interactions in a single model with {\it ab initio} accuracy. HermNet performs impressively against many top-performing models on both molecular and extended systems. Specifically, HermNet outperforms other tested models in nearly 75\%, 83\% and 94\% of tasks on MD17, QM9 and extended systems datasets, respectively. Finally, we elucidate how the design of HermNet is compatible with quantum mechanics from the perspective of the density functional theory. Besides, HermNet is a universal framework, whose sub-networks could be replaced by other advanced models.
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Submitted 2 September, 2021;
originally announced September 2021.
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Enhanced spin-orbit coupling and orbital moment in ferromagnets by electron correlations
Authors:
Ze Liu,
Jing-Yang You,
Bo Gu,
Sadamichi Maekawa,
Gang Su
Abstract:
In atomic physics, the Hund rule says that the largest spin and orbital state is realized due to the interplay of the spin-orbit coupling (SOC) and the Coulomb interactions. Here, we show that in ferromagnetic solids the effective SOC and the orbital magnetic moment can be dramatically enhanced by a factor of $1/[1-(2U^\prime-U-J_H)ρ_0]$, where $U$ and $U^\prime$ are the on-site Coulomb interactio…
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In atomic physics, the Hund rule says that the largest spin and orbital state is realized due to the interplay of the spin-orbit coupling (SOC) and the Coulomb interactions. Here, we show that in ferromagnetic solids the effective SOC and the orbital magnetic moment can be dramatically enhanced by a factor of $1/[1-(2U^\prime-U-J_H)ρ_0]$, where $U$ and $U^\prime$ are the on-site Coulomb interaction within the same oribtals and between different orbitals, respectively, $J_H$ is the Hund coupling, and $ρ_0$ is the average density of states. This factor is obtained by using the two-orbital as well as five-orbital Hubbard models with SOC. We also find that the spin polarization is more favorable than the orbital polarization, being consistent with experimental observations. This present work provides a fundamental basis for understanding the enhancements of SOC and orbital moment by Coulomb interactions in ferromagnets, which would have wide applications in spintronics.
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Submitted 2 June, 2021;
originally announced June 2021.
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Symmetry-adapted graph neural networks for constructing molecular dynamics force fields
Authors:
Zun Wang,
Chong Wang,
Sibo Zhao,
Shiqiao Du,
Yong Xu,
Bing-Lin Gu,
Wenhui Duan
Abstract:
Molecular dynamics is a powerful simulation tool to explore material properties. Most of the realistic material systems are too large to be simulated with first-principles molecular dynamics. Classical molecular dynamics has lower computational cost but requires accurate force fields to achieve chemical accuracy. In this work, we develop a symmetry-adapted graph neural networks framework, named mo…
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Molecular dynamics is a powerful simulation tool to explore material properties. Most of the realistic material systems are too large to be simulated with first-principles molecular dynamics. Classical molecular dynamics has lower computational cost but requires accurate force fields to achieve chemical accuracy. In this work, we develop a symmetry-adapted graph neural networks framework, named molecular dynamics graph neural networks (MDGNN), to construct force fields automatically for molecular dynamics simulations for both molecules and crystals. This architecture consistently preserves the translation, rotation and permutation invariance in the simulations. We propose a new feature engineering method including higher order contributions and show that MDGNN accurately reproduces the results of both classical and first-principles molecular dynamics. We also demonstrate that force fields constructed by the model has good transferability. Therefore, MDGNN provides an efficient and promising option for molecular dynamics simulations of large scale systems with high accuracy.
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Submitted 8 January, 2021;
originally announced January 2021.
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Two-dimensional topological superconductivity candidate in van der Waals layered material
Authors:
Jing-Yang You,
Bo Gu,
Gang Su,
Yuan Ping Feng
Abstract:
Two-dimensional (2D) topological superconductors are highly desired because they not only offer opportunities for exploring novel exotic quantum physics, but also possesses potential applications in quantum computation. However, there are few reports on 2D superconductors, let alone topological superconductors. Here, we find a 2D monolayer W$_2$N$_3$, which can be exfoliated from its real van der…
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Two-dimensional (2D) topological superconductors are highly desired because they not only offer opportunities for exploring novel exotic quantum physics, but also possesses potential applications in quantum computation. However, there are few reports on 2D superconductors, let alone topological superconductors. Here, we find a 2D monolayer W$_2$N$_3$, which can be exfoliated from its real van der Waals bulk material with much lower exfoliation energy than MoS$_2$, to be a topological metal with exotic topological states at different energy level. Due to the Van Hove singularities, the density of states near Fermi level are high, making the monolayer a compensate metal. Moreover, the monolayer W$_2$N$_3$ is unveiled to be a superconductor with the superconducting transition temperature Tc $\sim$ 22 K and a superconducting gap of about 5 meV based on the anisotropic Migdal-Eliashberg formalism, arising from the strong electron-phonon coupling around the $Γ$ point. Because of the strong electron and lattice coupling, the monolayer displays a non-Fermi liquid behavior in its normal states at temperatures lower than 80 K, where the specific heat exhibit T$^3$ behavior and the Wiedemann-Franz law dramatically violates. Our findings not only provide the platform to study the emergent phenomena in 2D topological superconductors, but also open a door to discover more 2D high-temperature topological superconductors in van der Waals materials.
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Submitted 2 March, 2021; v1 submitted 26 December, 2020;
originally announced December 2020.
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P-orbital magnetic topological states on square lattice
Authors:
Jing-Yang You,
Bo Gu,
Gang Su
Abstract:
Honeycomb or triangular lattices were extensively studied and thought to be proper platforms for realizing quantum anomalous Hall effect (QAHE), where magnetism is usually caused by d orbitals of transition metals. Here we propose that square lattice can host three magnetic topological states, including the fully spin polarized nodal loop semimetal, QAHE and topologically trivial ferromagnetic sem…
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Honeycomb or triangular lattices were extensively studied and thought to be proper platforms for realizing quantum anomalous Hall effect (QAHE), where magnetism is usually caused by d orbitals of transition metals. Here we propose that square lattice can host three magnetic topological states, including the fully spin polarized nodal loop semimetal, QAHE and topologically trivial ferromagnetic semiconductor, in terms of the symmetry and k$\cdot$p model analyses that are materials-independent. A phase diagram is presented. We further show that the above three magnetic topological states can be indeed implemented in two-dimensional (2D) materials ScLiCl5, LiScZ5 (Z=Cl, Br), and ScLiBr5, respectively. The ferromagnetism in these 2D materials is microscopically revealed from p electrons of halogen atoms. This present study opens a door to explore the exotic topological states as well as quantum magnetism from p-orbital electrons by means of the materials-independent approach.
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Submitted 2 July, 2021; v1 submitted 30 October, 2020;
originally announced November 2020.
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Kagome quantum anomalous Hall effect with high Chern number and large band gap
Authors:
Zhen Zhang,
Jing-Yang You,
Xing-Yu Ma,
Bo Gu,
Gang Su
Abstract:
Due to the potential applications in the low-power-consumption spintronic devices, the quantum anomalous Hall effect (QAHE) has attracted tremendous attention in past decades. However, up to now, QAHE was only observed experimentally in topological insulators with Chern numbers C= 1 and 2 at very low temperatures. Here, we propose three novel two-dimensional stable kagome ferromagnets Co3Pb3S2, Co…
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Due to the potential applications in the low-power-consumption spintronic devices, the quantum anomalous Hall effect (QAHE) has attracted tremendous attention in past decades. However, up to now, QAHE was only observed experimentally in topological insulators with Chern numbers C= 1 and 2 at very low temperatures. Here, we propose three novel two-dimensional stable kagome ferromagnets Co3Pb3S2, Co3Pb3Se2and Co3Sn3Se2that can realize QAHE with high Chern number of |C|=3. Monolayers Co3Pb3S2, Co3Pb3Se2 and Co3Sn3Se2 possess the large band gap of 70, 77 and 63 meV with Curie temperature TC of 51, 42 and 46 K, respectively. By constructing a heterostructure Co3Sn3Se2/MoS2, its TC is enhanced to 60 K and the band gap keeps about 60 meV due to the tensile strain of 2% at the interface. For the bilayer compound Co6Sn5Se4, it becomes a half-metal, with a relatively flat plateau in its anomalous Hall conductivity corresponding to |C| = 3 near the Fermi level. Our results provide new topological nontrivial systems of kagome ferromagnetic monolayers and heterostructrues possessing QAHE with high Chern number |C| = 3 and large band gaps.
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Submitted 15 October, 2020;
originally announced October 2020.
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Microscopic mechanism of high-temperature ferromagnetism in Fe, Mn, and Cr-doped InSb, InAs, and GaSb magnetic semiconductors
Authors:
Jing-Yang You,
Bo Gu,
Sadamichi Maekawa,
Gang Su
Abstract:
In recent experiments, high Curie temperatures Tc above room temperature were reported in ferromagnetic semiconductors Fe-doped GaSb and InSb, while low Tc between 20 K to 90 K were observed in some other semiconductors with the same crystal structure, including Fe-doped InAs and Mn-doped GaSb, InSb, and InAs. Here we study systematically the origin of high temperature ferromagnetism in Fe, Mn, Cr…
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In recent experiments, high Curie temperatures Tc above room temperature were reported in ferromagnetic semiconductors Fe-doped GaSb and InSb, while low Tc between 20 K to 90 K were observed in some other semiconductors with the same crystal structure, including Fe-doped InAs and Mn-doped GaSb, InSb, and InAs. Here we study systematically the origin of high temperature ferromagnetism in Fe, Mn, Cr-doped GaSb, InSb, and InAs magnetic semiconductors by combining the methods of density functional theory and quantum Monte Carlo. In the diluted impurity limit, the calculations show that the impurities Fe, Mn, and Cr have similar magnetic correlations in the same semiconductors. Our results suggest that high (low) Tc obtained in these experiments mainly comes from high (low) impurity concentrations. In addition, our calculations predict the ferromagnetic semiconductors of Cr-doped InSb, InAs, and GaSb that may have possibly high Tc. Our results show that the origin of high Tc in (Ga,Fe)Sb and (In,Fe)Sb is not due to the carrier induced mechanism because Fe3+ does not introduce carriers.
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Submitted 14 October, 2020;
originally announced October 2020.
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Electric field induced topological phase transition and large enhancements of spin-orbit coupling and Curie temperature in two-dimensional ferromagnetic semiconductors
Authors:
Jing-Yang You,
Xue-Juan Dong,
Bo Gu,
Gang Su
Abstract:
Tuning topological and magnetic properties of materials by applying an electric field is widely used in spintronics. In this work, we find a topological phase transition from topologically trivial to nontrivial states at an external electric field of about 0.1 V/A in MnBi$_2$Te$_4$ monolayer that is a topologically trivial ferromagnetic semiconductor. It is shown that when electric field increases…
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Tuning topological and magnetic properties of materials by applying an electric field is widely used in spintronics. In this work, we find a topological phase transition from topologically trivial to nontrivial states at an external electric field of about 0.1 V/A in MnBi$_2$Te$_4$ monolayer that is a topologically trivial ferromagnetic semiconductor. It is shown that when electric field increases from 0 to 0.15 V/A, the magnetic anisotropy energy (MAE) increases from about 0.1 to 6.3 meV, and the Curie temperature Tc increases from 13 to about 61 K. The increased MAE mainly comes from the enhanced spin-orbit coupling due to the applied electric field. The enhanced Tc can be understood from the enhanced $p$-$d$ hybridization and decreased energy difference between $p$ orbitals of Te atoms and $d$ orbitals of Mn atoms. Moreover, we propose two novel Janus materials MnBi$_2$Se$_2$Te$_2$ and MnBi$_2$S$_2$Te$_2$ monolayers with different internal electric polarizations, which can realize quantum anomalous Hall effect (QAHE) with Chern numbers $C$=1 and $C$=2, respectively. Our study not only exposes the electric field induced exotic properties of MnBi2Te4 monolayer, but also proposes novel materials to realize QAHE in ferromagnetic Janus semiconductors with electric polarization.
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Submitted 1 March, 2021; v1 submitted 28 September, 2020;
originally announced September 2020.
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Great enhancement of Curie temperature and magnetic anisotropy in two-dimensional van der Waals magnetic semiconductor heterostructures
Authors:
Xuejuan-Dong,
Jingyang-You,
Zheng Zhang,
Bo Gu,
Gang Su
Abstract:
In two-dimensional (2D) magnetic systems, large magnetic anisotropy is needed to stabilize the magnetic order according to Mermin-Wagner theorem. Based on density functional theory (DFT) calculations, we propose that the magnetic anisotropic energy (MAE) of 2D ferromagnetic (FM) semiconductors can be strongly enhanced in van der Waals heterostructures by attaching a nonmagnetic semiconductor monol…
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In two-dimensional (2D) magnetic systems, large magnetic anisotropy is needed to stabilize the magnetic order according to Mermin-Wagner theorem. Based on density functional theory (DFT) calculations, we propose that the magnetic anisotropic energy (MAE) of 2D ferromagnetic (FM) semiconductors can be strongly enhanced in van der Waals heterostructures by attaching a nonmagnetic semiconductor monolayer with large spin-orbit coupling. We studied Cr2Ge2Te6/PtSe2 bilayer heterostructures, where each layer has been realized in recent experiments. The DFT calculations show that the MAE of Cr2Ge2Te6/PtSe2 is enhanced by 70%, and the Curie temperature TC is increased far beyond room temperature. A model Hamiltonian is suggested to analyze the DFT results, showing that both the Dzyaloshinskii-Moriya interaction and the single-ion anisotropy contribute to the enhancement of the MAE. Based on the superexchange picture, we find that the decreased energy difference between 3d orbitals of Cr and 5p orbitals of Te contributes partially to the increase of TC. Our present work indicates a promising way to enhance the MAE and TC by constructing van der Waals semiconductor heterostructures, which will inspire further studies on the 2D magnetic semiconductor systems.
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Submitted 1 September, 2020;
originally announced September 2020.
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Spin treacle in a frustrated magnet observed with spin current
Authors:
Hiroki Taniguchi,
Mori Watanabe,
Takashi Ibe,
Masashi Tokuda,
Tomonori Arakawa,
Toshifumi Taniguchi,
Bo Gu,
Timothy Ziman,
Sadamichi Maekawa,
Kensuke Kobayashi,
Yasuhiro Niimi
Abstract:
By means of spin current, the flow of spin angular momentum, we find a regime of "spin treacle" in a frustrated magnetic system. To establish its existence, we have performed spin transport measurements in nanometer-scale spin glasses. At temperatures high enough that the magnetic moments fluctuate at high frequencies, the spin Hall angle, the conversion yield between spin current and charge curre…
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By means of spin current, the flow of spin angular momentum, we find a regime of "spin treacle" in a frustrated magnetic system. To establish its existence, we have performed spin transport measurements in nanometer-scale spin glasses. At temperatures high enough that the magnetic moments fluctuate at high frequencies, the spin Hall angle, the conversion yield between spin current and charge current, is independent of temperature. The spin Hall angle starts to decrease at a certain temperature $T^{*}$ and completely vanishes at a lower temperature. We argue that the latter corresponds to the spin freezing temperature $T_{\rm f}$ of the nanometer-scale spin glass, where the direction of conduction electron spin is randomized by the exchange coupling with the localized moments. The present experiment \textit{quantitatively} verifies the existence of a distinct "spin treacle" between $T_{\rm f}$ and $T^{*}$. We have also quantified a time scale of fluctuation of local magnetic moments in the spin treacle from the spin relaxation time of conduction electrons.
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Submitted 6 September, 2020; v1 submitted 20 August, 2020;
originally announced August 2020.
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Efficient ab initio calculation of electronic stopping in disordered systems via geometry pre-sampling: application to liquid water
Authors:
Bin Gu,
Brian Cunningham,
Daniel Muñoz-Santiburcio,
Fabiana Da Pieve,
Emilio Artacho,
Jorge Kohanoff
Abstract:
Knowledge of the electronic stopping curve for swift ions, $S_e(v)$, particularly around the Bragg peak, is important for understanding radiation damage. Experimentally, however, the determination of such feature for light ions is very challenging, especially in disordered systems such as liquid water and biological tissue. Recent developments in real-time time-dependent density functional theory…
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Knowledge of the electronic stopping curve for swift ions, $S_e(v)$, particularly around the Bragg peak, is important for understanding radiation damage. Experimentally, however, the determination of such feature for light ions is very challenging, especially in disordered systems such as liquid water and biological tissue. Recent developments in real-time time-dependent density functional theory (rt-TDDFT) have enabled the calculation of $S_e(v)$ along nm-sized trajectories. However, it is still a challenge to obtain a meaningful statistically averaged $S_e(v)$ that can be compared to observations. In this work, taking advantage of the correlation between the local electronic structure probed by the projectile and the distance from the projectile to the atoms in the target, we devise a trajectory pre-sampling scheme to select, geometrically, a small set of short trajectories to accelerate the convergence of the averaged $S_e(v)$ computed via rt-TDDFT. For protons in liquid water, we first calculate the reference probability distribution function (PDF) for the distance from the proton to the closest oxygen atom, $φ_R(r_{p{\rightarrow}O})$, for a trajectory of a length similar to those sampled experimentally. Then, short trajectories are sequentially selected so that the accumulated PDF reproduces $φ_R(r_{p{\rightarrow}O})$ to increasingly high accuracy. Using these pre-sampled trajectories, we demonstrate that the averaged $S_e(v_p)$ converges in the whole velocity range with less than eight trajectories, while other averaging methods using randomly and uniformly distributed trajectories require approximately ten times the computational effort. This allows us to compare the $S_e(v_p)$ curve to experimental data, and assess widely used empirical tables based on Bragg's rule.
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Submitted 26 June, 2020; v1 submitted 22 June, 2020;
originally announced June 2020.
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Superconductivity in sodium-doped T-carbon
Authors:
Jing-Yang You,
Bo Gu,
Gang Su
Abstract:
T-carbon has been proposed as a new carbon allotrope in 2011, which was successfully synthesized in recent experiments. Because of its fluffy structure, several kinds of atoms can be intercalated into T-carbon, making it a versatile candidate in various applications such as hydrogen storage, perovskite solar cells, lithium ion batteries, thermoelectrics, photocatalyst, etc. Here we show that super…
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T-carbon has been proposed as a new carbon allotrope in 2011, which was successfully synthesized in recent experiments. Because of its fluffy structure, several kinds of atoms can be intercalated into T-carbon, making it a versatile candidate in various applications such as hydrogen storage, perovskite solar cells, lithium ion batteries, thermoelectrics, photocatalyst, etc. Here we show that superconductivity can appear in Na-doped T-carbon with superconducting transition temperature Tc of 11 K at ambient pressure, and Tc can be enhanced to 19 K under pressure of 14 GPa, which results from an enhancement of the electron-phonon coupling due to the shift of the phonon spectral weight to lower frequencies with the increase of pressure. The calculations on specific heat and electrical and thermal conductivities show that the normal state of the Na-doped T-carbon superconductor reveals a non-Fermi liquid behavior. The prediction of superconductivity in Na-doped T-carbon would spur great interest both experimentally and theoretically to explore novel carbon-based superconductors.
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Submitted 2 June, 2020; v1 submitted 1 February, 2020;
originally announced February 2020.
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Antiferromagnetic and Electric Polarized States in Two-Dimensional Janus Semiconductor Fe2Cl3I3
Authors:
Zhen Zhang,
Jing-Yang You,
Bo Gu,
Gang Su
Abstract:
Two-dimensional (2D) Janus semiconductors with mirror asymmetry can introduce novel properties, such as large spin-orbit coupling (SOC) and normal piezoelectric polarization, which have attracted a great interest for their potential applications. Inspired by the recently fabricated 2D ferromagnetic (FM) semiconductor CrI3, a stable 2D (in x-y plane) antiferromagnetic (AFM) Janus semiconductor Fe2C…
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Two-dimensional (2D) Janus semiconductors with mirror asymmetry can introduce novel properties, such as large spin-orbit coupling (SOC) and normal piezoelectric polarization, which have attracted a great interest for their potential applications. Inspired by the recently fabricated 2D ferromagnetic (FM) semiconductor CrI3, a stable 2D (in x-y plane) antiferromagnetic (AFM) Janus semiconductor Fe2Cl3I3 with normal sublattice magnetization (m//z) is obtained by density functional theory calculations. By applying a tensile strain, the four magnetic states sequentially occur: AFM with m//z of sublattice, AFM with m//xy of sublattice, FM with m//xy, and FM with m//z. Such novel magnetic phase diagram driven by strain can be well understood by the spin-spin interactions including the third nearest-neighbor hoppings with the single-ion anisotropy, in which the SOC of I atoms is found to play an essential role. In addition, the electric polarization of Fe2Cl3I3 preserves with strain due to the broken inversion symmetry. Our results predict the rare Janus material Fe2Cl3I3 as an example of 2D semiconductors with both spin and charge polarizations, and reveal the highly sensitive strain-controlled magnetic states and magnetization direction, which highlights the 2D magnetic Janus semiconductor as a new platform to design spintronic materials.
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Submitted 8 September, 2020; v1 submitted 9 January, 2020;
originally announced January 2020.
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Two-dimensional magnetic semiconductors with room Curie temperatures
Authors:
Jing-Yang You,
Zhen Zhang,
Xue-Juan Dong,
Bo Gu,
Gang Su
Abstract:
We propose two-dimensional (2D) Ising-type ferromagnetic semiconductors TcSiTe3, TcGeSe3, and TcGeTe3 with high Curie temperatures around 200-0500 K. Owing to large spin-orbit couplings, the large magnetocrystalline anisotropy energy (MAE), large anomalous Hall conductivity, and large magneto-optical Kerr effect were discovered in these intriguing 2D materials. By comparing all possible 2D MGeTe3…
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We propose two-dimensional (2D) Ising-type ferromagnetic semiconductors TcSiTe3, TcGeSe3, and TcGeTe3 with high Curie temperatures around 200-0500 K. Owing to large spin-orbit couplings, the large magnetocrystalline anisotropy energy (MAE), large anomalous Hall conductivity, and large magneto-optical Kerr effect were discovered in these intriguing 2D materials. By comparing all possible 2D MGeTe3 materials (M = 3d, 4d, 5d transition metals), we found a large orbital moment around 0.5 $μ$B per atom and a large MAE for TcGeTe3. The large orbital moments are revealed to be from the comparable crystal fields and electron correlations in these Tc-based 2D materials. The microscopic mechanism of the high Curie temperature is also addressed. Our findings reveal the unique magnetic behaviors of 2D Tc-based materials and present a family of 2D ferromagnetic semiconductors with large MAE and Kerr rotation angles that would have wide applications in designing spintronic devices.
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Submitted 6 January, 2020; v1 submitted 15 August, 2019;
originally announced August 2019.
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Flat Band and Hole-induced Ferromagnetism in a Novel Carbon Monolayer
Authors:
Jing-Yang You,
Bo Gu,
Gang Su
Abstract:
In recent experiments, superconductivity and correlated insulating states were observed in twisted bilayer graphene (TBG) with small magic angles, which highlights the importance of the flat bands near Fermi energy. However, the moiré pattern of TBG consists of more than ten thousand carbon atoms that is not easy to handle with conventional methods. By density functional theory calculations, we ob…
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In recent experiments, superconductivity and correlated insulating states were observed in twisted bilayer graphene (TBG) with small magic angles, which highlights the importance of the flat bands near Fermi energy. However, the moiré pattern of TBG consists of more than ten thousand carbon atoms that is not easy to handle with conventional methods. By density functional theory calculations, we obtain a flat band at E$_F$ in a novel carbon monolayer coined as cyclicgraphdiyne with the unit cell of eighteen atoms. By doping holes into cyclicgraphdiyne to make the flat band partially occupied, we find that cyclicgraphdiyne with 1/8, 1/4, 3/8 and 1/2 hole doping concentration shows ferromagnetism (half-metal) while the case without doping is nonmagnetic, indicating a hole-induced nonmagnetic-ferromagnetic transition. The calculated conductivity of cyclicgraphdiyne with 1/8, 1/4 and 3/8 hole doping concentration is much higher than that without doping or with 1/2 hole doping. These results make cyclicgraphdiyne really attractive. By studying several carbon monolayers, we find that a perfect flat band may occur in the lattices with both separated or corner-connected triangular motifs with only including nearest-neighboring hopping of electrons, and the dispersion of flat band can be tuned by next-nearest-neighboring hopping. Our results shed insightful light on the formation of flat band in TBG. The present study also poses an alternative way to manipulate magnetism through doping flat band in carbon materials.
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Submitted 8 February, 2020; v1 submitted 29 July, 2019;
originally announced July 2019.
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Magnetically Controllable Topological Quantum Phase Transitions in Antiferromagnetic Topological Insulator MnBi$_2$Te$_4$
Authors:
Jiaheng Li,
Chong Wang,
Zetao Zhang,
Bing-Lin Gu,
Wenhui Duan,
Yong Xu
Abstract:
The recent discovery of antiferromagnetic (AFM) topological insulator (TI) MnBi$_2$Te$_4$ has triggered great research efforts on exploring novel magnetic topological physics. Based on first-principles calculations, we find that the manipulation of magnetic orientation and order not only significantly affects material symmetries and orbital hybridizations, but also results in variant new magnetic…
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The recent discovery of antiferromagnetic (AFM) topological insulator (TI) MnBi$_2$Te$_4$ has triggered great research efforts on exploring novel magnetic topological physics. Based on first-principles calculations, we find that the manipulation of magnetic orientation and order not only significantly affects material symmetries and orbital hybridizations, but also results in variant new magnetic topological phases in MnBi$_2$Te$_4$. We thus predict a series of unusual topological quantum phase transitions that are magnetically controllable in the material, including phase transitions from AFM TI to AFM mirror topological crystalline insulator, from type-II to type-I topological Weyl semimetal, and from axion insulator to Chern insulator. The findings open new opportunities for future research and applications of magnetic topological materials.
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Submitted 23 May, 2019; v1 submitted 2 May, 2019;
originally announced May 2019.
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Two-Dimensional Room Temperature Ferromagnetic Semiconductors with Quantum Anomalous Hall Effect
Authors:
Jing-Yang You,
Zhen Zhang,
Bo Gu,
Gang Su
Abstract:
To obtain room temperature ferromagnetic semiconductors is one of big challenges in science, and also premises essentially to realize room temperature quantum anomalous Hall effect (QAHE), both of which are quite expected for a long time. Here we report that, based on first-principles calculations, PdBr3, PtBr3, PdI3 and PtI3 monolayers are ferromagnetic semiconductors with possible high temperatu…
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To obtain room temperature ferromagnetic semiconductors is one of big challenges in science, and also premises essentially to realize room temperature quantum anomalous Hall effect (QAHE), both of which are quite expected for a long time. Here we report that, based on first-principles calculations, PdBr3, PtBr3, PdI3 and PtI3 monolayers are ferromagnetic semiconductors with possible high temperature QAHE. Monte Carlo simulations give Curie temperatures 350 K and 375 K for PdBr3 and PtBr3 monolayers, respectively. These two-dimensional (2D) materials are Chern insulators. The band gaps of PdBr3 and PtBr3 are 58.7 meV and 28.1 meV with GGA and 100.8 meV and 45 meV with HSE06, respectively, quite well in favor of observing room temperature QAHE. The large band gaps were unveiled from multi-orbital electron correlations. By carefully checking the stability, PdBr3, PtBr3, and PtI3 monolayers are all predicted to be feasible in experiment. The present work sheds new light on developing promising spintronic devices by using the room temperature ferromagnetic semiconductors, and dissipationless devices by applying room temperature QAHE.
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Submitted 3 September, 2019; v1 submitted 24 April, 2019;
originally announced April 2019.
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Type-II Ising superconductivity in two-dimensional materials with strong spin-orbit coupling
Authors:
Chong Wang,
Biao Lian,
Xiaomi Guo,
Jiahao Mao,
Zetao Zhang,
Ding Zhang,
Bing-Lin Gu,
Yong Xu,
Wenhui Duan
Abstract:
Recent discovery of Ising superconductivity protected against in-plane magnetic field by spin-orbit coupling (SOC) has stimulated intensive research interests. The effect, however, was only expected to appear in two-dimensional (2D) noncentrosymmetric materials with spin-valley locking. In this work, we proposed a new type of Ising superconductivity in 2D materials with $C_{nz}$ rotational symmetr…
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Recent discovery of Ising superconductivity protected against in-plane magnetic field by spin-orbit coupling (SOC) has stimulated intensive research interests. The effect, however, was only expected to appear in two-dimensional (2D) noncentrosymmetric materials with spin-valley locking. In this work, we proposed a new type of Ising superconductivity in 2D materials with $C_{nz}$ rotational symmetry ($n=3,4,6$). This mechanism, dubbed as type-II Ising superconductivity, is applicable for centrosymmetric materials. Type-II Ising superconductivity relies on the SOC-induced spin-orbital locking characterized by Ising-type Zeeman-like fields displaying opposite signs for opposing orbitals. We found that type-II Ising superconductivity are most prominent around time-reversal invariant momenta and is not sensitive to inversion symmetry breaking. By performing high-throughput first-principles calculations, about one hundred candidate materials were identified. Our work significantly enriches the physics and materials of Ising superconductor, opening new opportunities for fundamental research and practical applications of 2D materials.
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Submitted 4 September, 2019; v1 submitted 15 March, 2019;
originally announced March 2019.
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Strain-Induced Room-Temperature Ferromagnetic Semiconductors with Large Anomalous Hall Conductivity in Two-Dimensional Cr2Ge2Se6
Authors:
Xue-Juan Dong,
Jing-Yang You,
Bo Gu,
Gang Su
Abstract:
By density functional theory calculations, we predict a stable two-dimensional (2D) ferromagnetic semiconductor Cr$_2$Ge$_2$Se$_6$, where the Curie temperature $T$$_c$ can be dramatically enhanced beyond room temperature by applying a few percent strain. In addition, the anomalous Hall conductivity in 2D Cr$_2$Ge$_2$Se$_6$ and Cr$_2$Ge$_2$Te$_6$ is predicted to be comparable to that in ferromagnet…
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By density functional theory calculations, we predict a stable two-dimensional (2D) ferromagnetic semiconductor Cr$_2$Ge$_2$Se$_6$, where the Curie temperature $T$$_c$ can be dramatically enhanced beyond room temperature by applying a few percent strain. In addition, the anomalous Hall conductivity in 2D Cr$_2$Ge$_2$Se$_6$ and Cr$_2$Ge$_2$Te$_6$ is predicted to be comparable to that in ferromagnetic metals of Fe and Ni, and is an order of magnitude larger than that in diluted magnetic semiconductor Ga(Mn,As). Based on superexchange interactions, the enhanced $T$$_c$ in 2D Cr$_2$Ge$_2$Se$_6$ by strain can be understood by the decreased energy difference between 3$d$ orbitals of Cr and 4$p$ orbitals of Se. Our finding highlights the microscopic mechanism to obtain the room temperature ferromagnetic semiconductors by strain.
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Submitted 16 July, 2019; v1 submitted 26 January, 2019;
originally announced January 2019.
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Intrinsic magnetic topological insulators in van der Waals layered MnBi$_2$Te$_4$-family materials
Authors:
Jiaheng Li,
Yang Li,
Shiqiao Du,
Zun Wang,
Bing-Lin Gu,
Shou-Cheng Zhang,
Ke He,
Wenhui Duan,
Yong Xu
Abstract:
The interplay of magnetism and topology is a key research subject in condensed matter physics and material science, which offers great opportunities to explore emerging new physics, like the quantum anomalous Hall (QAH) effect, axion electrodynamics and Majorana fermions. However, these exotic physical effects have rarely been realized in experiment, due to the lacking of suitable working material…
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The interplay of magnetism and topology is a key research subject in condensed matter physics and material science, which offers great opportunities to explore emerging new physics, like the quantum anomalous Hall (QAH) effect, axion electrodynamics and Majorana fermions. However, these exotic physical effects have rarely been realized in experiment, due to the lacking of suitable working materials. Here we predict that van der Waals layered MnBi$_2$Te$_4$-family materials show two-dimensional (2D) ferromagnetism in the single layer and three-dimensional (3D) $A$-type antiferromagnetism in the bulk, which could serve as a next-generation material platform for the state-of-art research. Remarkably, we predict extremely rich topological quantum effects with outstanding features in an experimentally available material MnBi$_2$Te$_4$, including a 3D antiferromagnetic topological insulator with the long-sought topological axion states, the type-II magnetic Weyl semimetal (WSM) with simply one pair of Weyl points, and the high-temperature intrinsic QAH effect. These striking predictions, if proved experimentally, could profoundly transform future research and technology of topological quantum physics.
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Submitted 26 August, 2018;
originally announced August 2018.
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Optical absorption properties of laser-dressed matter
Authors:
Bing Gu,
Ignacio Franco
Abstract:
Characterizing and controlling matter driven far from equilibrium represents a major challenge for science and technology. Here we develop a theory for the optical absorption of electronic materials driven far from equilibrium by resonant and non-resonant lasers. In it, the interaction between matter and the driving light is treated exactly through a Floquet analysis, while the effects of the prob…
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Characterizing and controlling matter driven far from equilibrium represents a major challenge for science and technology. Here we develop a theory for the optical absorption of electronic materials driven far from equilibrium by resonant and non-resonant lasers. In it, the interaction between matter and the driving light is treated exactly through a Floquet analysis, while the effects of the probing light are captured to first order in perturbation theory. The resulting equations are reminiscent to those for equilibrium absorption but with the Floquet modes playing the role of the pristine eigenstates. The formalism is employed to characterize the optical properties of a model nanoscale semiconductor dressed by non-resonant light of intermediate intensity (non-perturbative, but non-ionizing). As shown, non-resonant light can reversibly turn this transparent semiconductor into a broadband absorber and open strong absorption/stimulated emission bands at very low frequencies (~ meV). Further, the absorption spectra of the driven material exhibit periodic features energetically spaced by the photon energy of the driving light that reflect the periodic structure of the Floquet bands. These developments offer a general approach to understand and predict the emergent optical properties of materials dressed by the electric field of light, and catalyze the design of laser-dressed materials with desired optical properties.
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Submitted 24 June, 2018;
originally announced June 2018.
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First-principles calculation of optical responses based on nonorthogonal localized orbitals
Authors:
Chong Wang,
Sibo Zhao,
Xiaomi Guo,
Xinguo Ren,
Bing-Lin Gu,
Yong Xu,
Wenhui Duan
Abstract:
Based on ab initio software packages using nonorthogonal localized orbitals, we develop a general scheme of calculating response functions. We test the performance of this method by calculating nonlinear optical responses of materials, like the shift current conductivity of monolayer WS2, and achieve good agreement with previous calculations. This method bears many similarities to Wannier interpol…
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Based on ab initio software packages using nonorthogonal localized orbitals, we develop a general scheme of calculating response functions. We test the performance of this method by calculating nonlinear optical responses of materials, like the shift current conductivity of monolayer WS2, and achieve good agreement with previous calculations. This method bears many similarities to Wannier interpolation, which requires a challenging optimization of Wannier functions due to the conflicting requirements of orthogonality and localization. Although computationally heavier compared to Wannier interpolation, our procedure avoids the construction of Wannier functions and thus enables automated high throughput calculations of linear and nonlinear responses related to electrical, magnetic and optical material properties.
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Submitted 4 September, 2019; v1 submitted 18 June, 2018;
originally announced June 2018.
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Enhanced Magneto-optical Kerr Effect at Fe/Insulator Interfaces
Authors:
Bo Gu,
Saburo Takahashi,
Sadamichi Maekawa
Abstract:
Using density functional theory calculations, we have found an enhanced magneto-optical Kerr effect in Fe/insulator interfaces. The results of our study indicate that interfacial Fe atoms in the Fe films have a low-dimensional nature, which causes the following two effects: (i) The diagonal component $σ_{xx}$ of the optical conductivity decreases dramatically because the hopping integral for elect…
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Using density functional theory calculations, we have found an enhanced magneto-optical Kerr effect in Fe/insulator interfaces. The results of our study indicate that interfacial Fe atoms in the Fe films have a low-dimensional nature, which causes the following two effects: (i) The diagonal component $σ_{xx}$ of the optical conductivity decreases dramatically because the hopping integral for electrons between Fe atoms is suppressed by the low dimensionality. (ii) The off-diagonal component $σ_{xy}$ of the optical conductivity does not change at low photon energies, but it is enhanced at photon energies around 2 eV, where we obtain enhanced orbital magnetic moments and spin-orbit correlations for the interfacial Fe atoms. A large Kerr angle develops in proportion to the ratio $σ_{xy}/σ_{xx}$. Our findings indicate an efficient way to enhance the effect of spin-orbit coupling at metal/insulator interfaces without using heavy elements.
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Submitted 27 October, 2017;
originally announced October 2017.
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An efficient and reliable growth method for epitaxial complex oxide films by molecular beam epitaxy
Authors:
T. W. Zhang,
Z. W. Mao,
Z. B. Gu,
Y. F. Nie,
X. Q. Pan
Abstract:
Transition metal oxide heterostructures and interfaces host a variety of exciting quantum phases and can be grown with atomic-scale precision by utilising the intensity oscillations of $in$ $situ$ reflection high-energy electron diffraction (RHEED). However, establishing a stable oscillation pattern in the growth calibration of complex oxides films is very challenging and time consuming. Here, we…
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Transition metal oxide heterostructures and interfaces host a variety of exciting quantum phases and can be grown with atomic-scale precision by utilising the intensity oscillations of $in$ $situ$ reflection high-energy electron diffraction (RHEED). However, establishing a stable oscillation pattern in the growth calibration of complex oxides films is very challenging and time consuming. Here, we develop a substantially more efficient and reliable growth calibration method for complex oxide films using molecular beam epitaxy.
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Submitted 19 June, 2017;
originally announced June 2017.
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Voltage-Controllable Colossal Magnetocrystalline Anisotropy in Single Layer Transition Metal Dichalcogenides
Authors:
Xuelei Sui,
Tao Hu,
Jianfeng Wang,
Bing-Lin Gu,
Wenhui Duan,
Mao-sheng Miao
Abstract:
Materials with large magnetocrystalline anisotropy and strong electric field effects are highly needed to develop new types of memory devices based on electric field control of spin orientations. Instead of using modified transition metal films, we propose that certain monolayer transition metal dichalcogenides are the ideal candidate materials for this purpose. Using density functional calculatio…
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Materials with large magnetocrystalline anisotropy and strong electric field effects are highly needed to develop new types of memory devices based on electric field control of spin orientations. Instead of using modified transition metal films, we propose that certain monolayer transition metal dichalcogenides are the ideal candidate materials for this purpose. Using density functional calculations, we show that they exhibit not only a large magnetocrystalline anisotropy (MCA), but also colossal voltage modulation under external field. Notably, in some materials like CrSe_2 and FeSe_2, where spins show a strong preference for in-plane orientation, they can be switched to out-of-plane direction. This effect is attributed to the large band character alteration that the transition metal d-states undergo around the Fermi energy due to the electric field. We further demonstrate that strain can also greatly change MCA, and can help to improve the modulation efficiency while combined with an electric field.
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Submitted 12 June, 2017;
originally announced June 2017.
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Magnetization dynamics and its scattering mechanism in thin CoFeB films with interfacial anisotropy
Authors:
Atsushi Okada,
Shikun He,
Bo Gu,
Shun Kanai,
Anjan Soumyanarayanan,
Sze Ter Lim,
Michael Tran,
Michiyasu Mori,
Sadamichi Maekawa,
Fumihiro Matsukura,
Hideo Ohno,
Christos Panagopoulos
Abstract:
Studies of magnetization dynamics have incessantly facilitated the discovery of fundamentally novel physical phenomena, making steady headway in the development of magnetic and spintronics devices. The dynamics can be induced and detected electrically, offering new functionalities in advanced electronics at the nanoscale. However, its scattering mechanism is still disputed. Understanding the mecha…
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Studies of magnetization dynamics have incessantly facilitated the discovery of fundamentally novel physical phenomena, making steady headway in the development of magnetic and spintronics devices. The dynamics can be induced and detected electrically, offering new functionalities in advanced electronics at the nanoscale. However, its scattering mechanism is still disputed. Understanding the mechanism in thin films is especially important, because most spintronics devices are made from stacks of multilayers with nanometer thickness. The stacks are known to possess interfacial magnetic anisotropy, a central property for applications, whose influence on the dynamics remains unknown. Here, we investigate the impact of interfacial anisotropy by adopting CoFeB/MgO as a model system. Through systematic and complementary measurements of ferromagnetic resonance (FMR), on a series of thin films, we identify narrower FMR linewidths at higher temperatures. We explicitly rule out the temperature dependence of intrinsic damping as a possible cause, and it is also not expected from existing extrinsic scattering mechanisms for ferromagnets. We ascribe this observation to motional narrowing, an old concept so far neglected in the analyses of FMR spectra. The effect is confirmed to originate from interfacial anisotropy, impacting the practical technology of spin-based nanodevices up to room temperature.
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Submitted 18 May, 2017;
originally announced May 2017.
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New p- and n-type ferromagnetic semiconductors: Cr-doped BaZn2As2
Authors:
Bo Gu,
Sadamichi Maekawa
Abstract:
We find new ferromagnetic semiconductors, Cr-doped BaZn2As2, by employing a combined method of the density functional theory and the quantum Monte Carlo simulation. Due to a narrow band gap of 0.2 eV in host BaZn2As2 and the different hybridization of 3d orbitals of Cr impurity, the impurity bound states have been induced both below the top of valence band and above the bottom of conduction band.…
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We find new ferromagnetic semiconductors, Cr-doped BaZn2As2, by employing a combined method of the density functional theory and the quantum Monte Carlo simulation. Due to a narrow band gap of 0.2 eV in host BaZn2As2 and the different hybridization of 3d orbitals of Cr impurity, the impurity bound states have been induced both below the top of valence band and above the bottom of conduction band. The long-range ferromagnetic coupling between Cr impurities is obtained with both p- and n-type carriers.
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Submitted 11 October, 2016;
originally announced October 2016.
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Dirac semimetal phase in the hexagonal LiZnBi
Authors:
Wendong Cao,
Peizhe Tang,
Yong Xu,
Jian Wu,
Bing-Lin Gu,
Wenhui Duan
Abstract:
Based on first-principles calculations, we find that LiZnBi, a metallic hexagonal $ABC$ compound, can be driven into a Dirac semimetal with a pair of Dirac points by strain. The nontrivial topological nature of the strained LiZnBi is directly demonstrated by calculating its $\mathbb{Z}_2$ index and the surface states, where the Fermi arcs are clearly observed. The low-energy states as well as topo…
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Based on first-principles calculations, we find that LiZnBi, a metallic hexagonal $ABC$ compound, can be driven into a Dirac semimetal with a pair of Dirac points by strain. The nontrivial topological nature of the strained LiZnBi is directly demonstrated by calculating its $\mathbb{Z}_2$ index and the surface states, where the Fermi arcs are clearly observed. The low-energy states as well as topological properties are shown to be sensitive to the strain configurations. The finding of Dirac semimetal phase in LiZnBi may intrigue further researches on the topological properties of hexagonal $ABC$ materials and promote new practical applications.
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Submitted 20 March, 2016;
originally announced March 2016.
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Diluted magnetic semiconductors with narrow band gaps
Authors:
Bo Gu,
Sadamichi Maekawa
Abstract:
We propose a method to realize diluted magnetic semiconductors (DMS) with p- and n-type carriers by choosing host semiconductors with a narrow band gap. By employing a combination of the density function theory and quantum Monte Carlo simulation, we demonstrate such semiconductors using Mn-doped BaZn2As2, which has a band gap of 0.2 eV. In addition, we found a new non-toxic DMS Mn-doped BaZn2Sb2,…
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We propose a method to realize diluted magnetic semiconductors (DMS) with p- and n-type carriers by choosing host semiconductors with a narrow band gap. By employing a combination of the density function theory and quantum Monte Carlo simulation, we demonstrate such semiconductors using Mn-doped BaZn2As2, which has a band gap of 0.2 eV. In addition, we found a new non-toxic DMS Mn-doped BaZn2Sb2, of which the Curie temperature Tc is predicted to be higher than that of Mn-doped BaZn2As2, the Tc of which was up to 230 K in the recent experiment.
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Submitted 10 October, 2016; v1 submitted 19 January, 2016;
originally announced January 2016.
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Accurate theoretical prediction on positron lifetime of bulk materials
Authors:
Wenshuai Zhang,
Bingchuan Gu,
Jiandang Liu,
Bangjiao Ye
Abstract:
Based on the first-principles calculations, we perform an initiatory statistical assessment on the reliability level of theoretical positron lifetime of bulk material. We found the original generalized gradient approximation (GGA) form of the enhancement factor and correlation potentials overestimates the effect of the gradient factor. Furthermore, an excellent agreement between model and data wit…
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Based on the first-principles calculations, we perform an initiatory statistical assessment on the reliability level of theoretical positron lifetime of bulk material. We found the original generalized gradient approximation (GGA) form of the enhancement factor and correlation potentials overestimates the effect of the gradient factor. Furthermore, an excellent agreement between model and data with the difference being the noise level of the data is found in this work. In addition, we suggest a new GGA form of the correlation scheme which gives the best performance. This work demonstrates that a brand-new reliability level is achieved for the theoretical prediction on positron lifetime of bulk material and the accuracy of the best theoretical scheme can be independent on the type of materials.
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Submitted 21 October, 2015;
originally announced October 2015.
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Strong Suppression of the Spin Hall Effect in the Spin Glass State
Authors:
Y. Niimi,
M. Kimata,
Y. Omori,
B. Gu,
T. Ziman,
S. Maekawa,
A. Fert,
Y. Otani
Abstract:
We have measured spin Hall effects in spin glass metals, CuMnBi alloys, with the spin absorption method in the lateral spin valve structure. Far above the spin glass temperature Tg where the magnetic moments of Mn impurities are randomly frozen, the spin Hall angle of CuMnBi ternary alloy is as large as that of CuBi binary alloy. Surprisingly, however, it starts to decrease at about 4Tg and become…
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We have measured spin Hall effects in spin glass metals, CuMnBi alloys, with the spin absorption method in the lateral spin valve structure. Far above the spin glass temperature Tg where the magnetic moments of Mn impurities are randomly frozen, the spin Hall angle of CuMnBi ternary alloy is as large as that of CuBi binary alloy. Surprisingly, however, it starts to decrease at about 4Tg and becomes as little as 7 times smaller at 0.5Tg. A similar tendency was also observed in anomalous Hall effects in the ternary alloys. We propose an explanation in terms of a simple model considering the relative dynamics between the localized moment and the conduction electron spin.
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Submitted 8 November, 2015; v1 submitted 3 October, 2015;
originally announced October 2015.